CN218175091U - Plasma alloying device - Google Patents
Plasma alloying device Download PDFInfo
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- CN218175091U CN218175091U CN202222192014.0U CN202222192014U CN218175091U CN 218175091 U CN218175091 U CN 218175091U CN 202222192014 U CN202222192014 U CN 202222192014U CN 218175091 U CN218175091 U CN 218175091U
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Abstract
The utility model discloses a plasma alloying device, in particular to the technical field of chemical heat treatment equipment of metal material surfaces, which comprises a shell, wherein a driving device is arranged at the bottom in the shell, a cathode tray is connected above the driving device, and a base material is placed on the cathode tray; a target is arranged above the substrate and is fixed on the inner wall of the shell through a fixing structure; the high-voltage pulse sputtering device further comprises a high-voltage pulse heating power supply and a high-voltage pulse sputtering power supply, wherein a cathode of the high-voltage pulse heating power supply is connected with the substrate, a cathode of the high-voltage pulse sputtering power supply is connected with the target, and anodes of the high-voltage pulse heating power supply and the high-voltage pulse sputtering power supply are both connected to the grounded shell; the top of the shell is provided with an air inlet used for connecting an air inlet device, and the bottom of the shell is provided with a communication port used for connecting a vacuumizing device; the side wall of the shell is provided with a movable door plate. The utility model provides an among the plasma alloying device among the prior art through the vibration that opens and shuts of lift bell jar type equipment arouse substrate and target apart from changing or the electrically conductive problem of contact between the two to at negative pole tray bottom installation rotary drive device, be favorable to making the diffusion coating layer that forms more even, fine and close.
Description
Technical Field
The utility model relates to a metal material surface chemical heat treatment equipment technical field, more specifically says, the utility model relates to a plasma alloying device.
Background
The Physical Vapor Deposition (PVD) technology is applied to many fields, a plasma alloying device is utilized, a substrate and a target material are used as cathodes, a furnace body is used as an anode, argon is introduced after the vacuum degree in the furnace is pumped to 10-2Pa, the pressure in a vacuum chamber is about 20-50 Pa, the temperature of the substrate is 500-1300 ℃, the diffusion heat preservation time is determined according to the process requirements, the source voltage of high-voltage pulse sputtering is-800V-2000V, the substrate voltage of high-voltage pulse heating is-200V-800V, glow discharge is generated under the action of a high-voltage electric field, the argon is decomposed to form argon ions with high energy to bombard the substrate and the surface of the target material, metal atoms of the source are sputtered out and diffused into the substrate at high temperature, and thus a diffusion coating is formed on the surface of the substrate. The existing plasma alloying device has the problem that the distance between a substrate and a target material is changed or the contact between the substrate and the target material is conductive due to the opening and closing vibration of a lifting bell jar type device.
SUMMERY OF THE UTILITY MODEL
In order to overcome the above-mentioned defects in the prior art, the embodiments of the present invention provide a plasma alloying device to solve the problems presented in the above-mentioned background art.
In order to achieve the above object, the utility model provides a following technical scheme: a plasma alloying device comprises a shell, wherein a driving device is arranged at the bottom in the shell, a cathode tray is connected above the driving device, and a base material is placed on the cathode tray;
a target is arranged above the base material and is fixed on the inner wall of the shell through a fixing structure;
the high-voltage pulse sputtering device further comprises a high-voltage pulse heating power supply and a high-voltage pulse sputtering power supply, wherein a cathode of the high-voltage pulse heating power supply is connected with the substrate, a cathode of the high-voltage pulse sputtering power supply is connected with the target, and anodes of the high-voltage pulse heating power supply and the high-voltage pulse sputtering power supply are both connected to the grounded shell;
the top of the shell is provided with an air inlet used for connecting an air inlet device, and the bottom of the shell is provided with a communication port used for connecting a vacuumizing device;
the side wall of the shell is provided with a movable door plate.
Furthermore, the driving device comprises a driving motor and a rotating shaft connected with the driving motor, and the top end of the rotating shaft is connected with the cathode tray.
Furthermore, the target material is pre-infiltrated metal and is arranged in a hanging mode.
Further, the distance between the base material and the target material is 10-20 mm.
Furthermore, the gas that the air inlet device passes through the air inlet and lets in to the casing is argon.
Further, the geometric shape of the target material is one of a plate shape, a brush shape, a strip shape, an arc shape, a filiform shape, a mesh shape and a barrel shape.
The utility model has the advantages that:
the device solves the problem that the distance between the substrate and the target changes or the contact between the substrate and the target is conductive due to the opening and closing vibration of the lifting bell jar type device in the plasma alloying device in the prior art, and the rotary driving device is arranged at the bottom of the cathode tray, so that the formed diffusion coating is more uniform and compact.
Drawings
Fig. 1 is a schematic structural diagram of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts all belong to the protection scope of the present invention.
The plasma alloying device shown in the attached figures 1-2 comprises a shell 1, wherein a driving device 2 is arranged at the bottom in the shell 1, a cathode tray 3 is connected above the driving device 2, and a substrate 5 is placed on the cathode tray;
a target 4 is arranged above the substrate 5, and the target 4 is fixed on the inner wall of the shell 1 through a fixing structure 6;
the sputtering target material is characterized by further comprising a high-voltage pulse heating power supply 8 and a high-voltage pulse sputtering power supply 9, wherein the cathode of the high-voltage pulse heating power supply 8 is connected with the substrate 5, the cathode of the high-voltage pulse sputtering power supply 9 is connected with the target material 4, and the anodes of the high-voltage pulse heating power supply 8 and the high-voltage pulse sputtering power supply 9 are both connected to the grounded shell 1;
the top of the shell 1 is provided with an air inlet 11 for connecting an air inlet device, and the bottom of the shell 1 is provided with a communication port 10 for connecting a vacuum-pumping device;
the side wall of the shell 1 is provided with a movable door plate 7.
In the preferred embodiment, the driving device 2 includes a driving motor and a rotating shaft connected to the driving motor, and the top end of the rotating shaft is connected to the cathode tray 3.
In the preferred embodiment, the target 4 is pre-infiltrated metal and is suspended.
In the preferred embodiment, the distance between the substrate 5 and the target 4 is 10 to 20 mm.
In this preferred embodiment, the gas introduced into the housing 1 through the gas inlet 11 by the gas inlet device is argon gas.
In the preferred embodiment, the geometric shape of the target 4 is one of a plate shape, a brush shape, a strip shape, an arc shape, a filament shape, a mesh shape, and a barrel shape.
The utility model discloses the theory of operation: the utility model discloses place substrate 5 on negative pole tray 3, hang target 4, after the evacuation reaches 10-2Pa in the casing, fill argon gas to working pressure, between substrate 5 and vacuum casing 1, add high-voltage pulse heating voltage, between target 4 and vacuum casing 1, add high-voltage pulse sputtering voltage, after rising temperature and keeping warm a period with substrate 5, fall to the room temperature, go out the stove and take out 5 samples of substrate, can obtain the surface coating that oozes.
Example (b): placing one Ti6Al4V base material 5 with the size of 40 mm multiplied by 20 mm (diameter multiplied by height) on a cathode tray 3, hanging a molybdenum target material 4 with the size of 100 mm multiplied by 5 mm ((diameter multiplied by thickness)) right above the base material 5, ensuring that the distance between the molybdenum target and the Ti6Al4V base material is 15 cm, vacuumizing to 10-2Pa, filling argon to 40 Pa, adding high-voltage direct-current heating voltage-550V between the base material 5 and a vacuum shell 1, adding high-voltage direct-current sputtering voltage-1100V between the molybdenum target 4 and the vacuum shell 1, heating the workpiece to 950 ℃, preserving the temperature for 2 hours, cooling to room temperature, taking out a sample from a furnace, and obtaining the thickness of a surface molybdenum infiltration layer of 20 mu m, wherein the molybdenum infiltration layer consists of molybdenum and a deposition layer.
The points to be finally explained are: first, in the description of the present application, it should be noted that, unless otherwise specified and limited, the terms "mounted," "connected," and "connected" should be understood broadly, and may be a mechanical connection or an electrical connection, or a communication between two elements, and may be a direct connection, and "upper," "lower," "left," and "right" are only used to indicate a relative positional relationship, and when the absolute position of the object to be described is changed, the relative positional relationship may be changed;
secondly, the method comprises the following steps: in the drawings of the disclosed embodiments of the present invention, only the structures related to the disclosed embodiments are referred to, and other structures can refer to the common design, and under the condition of no conflict, the same embodiment and different embodiments of the present invention can be combined with each other;
and finally: the foregoing is illustrative of the preferred embodiments of the present invention, and is not to be construed as limiting the invention, and any modifications, equivalent alterations, improvements and the like made within the spirit and principle of the invention are intended to be included within the scope of the invention.
Claims (6)
1. A plasma alloying device comprising a housing (1), characterized in that: a driving device (2) is arranged at the bottom in the shell (1), a cathode tray (3) is connected above the driving device (2), and a base material (5) is placed on the cathode tray;
a target (4) is arranged above the base material (5), and the target (4) is fixed on the inner wall of the shell (1) through a fixing structure (6);
the sputtering target is characterized by further comprising a high-voltage pulse heating power supply (8) and a high-voltage pulse sputtering power supply (9), wherein the cathode of the high-voltage pulse heating power supply (8) is connected with the base material (5), the cathode of the high-voltage pulse sputtering power supply (9) is connected with the target (4), and the anodes of the high-voltage pulse heating power supply (8) and the high-voltage pulse sputtering power supply (9) are both connected to the grounded shell (1);
the top of the shell (1) is provided with an air inlet (11) used for being connected with an air inlet device, and the bottom of the shell (1) is provided with a communication port (10) used for being connected with a vacuumizing device;
the side wall of the shell (1) is provided with a movable door plate (7).
2. A plasma alloying apparatus as claimed in claim 1, wherein: the driving device (2) comprises a driving motor and a rotating shaft connected with the driving motor, and the top end of the rotating shaft is connected with the cathode tray (3).
3. A plasma alloying apparatus according to claim 1 or 2, wherein: the target (4) is pre-infiltrated with metal and is arranged in a hanging manner.
4. A plasma alloying apparatus according to claim 1 or 2, wherein: the distance between the base material (5) and the target material (4) is 10-20 mm.
5. A plasma alloying apparatus as claimed in claim 1, wherein: the gas introduced into the shell (1) by the gas inlet device through the gas inlet (11) is argon.
6. A plasma alloying device according to claim 3, wherein: the geometric shape of the target (4) is one of a plate shape, a brush shape, a strip shape, an arc shape, a filiform shape, a net shape and a barrel shape.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222192014.0U CN218175091U (en) | 2022-08-19 | 2022-08-19 | Plasma alloying device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222192014.0U CN218175091U (en) | 2022-08-19 | 2022-08-19 | Plasma alloying device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN218175091U true CN218175091U (en) | 2022-12-30 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222192014.0U Active CN218175091U (en) | 2022-08-19 | 2022-08-19 | Plasma alloying device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN218175091U (en) |
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2022
- 2022-08-19 CN CN202222192014.0U patent/CN218175091U/en active Active
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