CN218071482U - Double-frequency high-power solid-state transmitter capable of effectively improving transmission efficiency - Google Patents
Double-frequency high-power solid-state transmitter capable of effectively improving transmission efficiency Download PDFInfo
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- CN218071482U CN218071482U CN202222014424.6U CN202222014424U CN218071482U CN 218071482 U CN218071482 U CN 218071482U CN 202222014424 U CN202222014424 U CN 202222014424U CN 218071482 U CN218071482 U CN 218071482U
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Abstract
A dual-frequency high-power solid-state transmitter capable of effectively improving transmitting efficiency solves the problems of low efficiency and inflexible frequency adjustment of the transmitter in the prior art. The utility model comprises a modulator, a power supply, a micro-control system, a cooling system, a radio frequency system, a microwave signal synthesis module and a power regulation module, wherein the modulator, the power supply and the cooling system are respectively connected with the micro-control system; the microwave signal synthesis module and the power regulation module are connected with a radio frequency system through a micro-control system; the microwave signal synthesis module further comprises an electromagnetic compatibility unit. The utility model realizes the flexible and adjustable signal of the transmitter by arranging the microwave signal synthesis module, realizes the high power of the transmitter by the power regulation module, and realizes the energy efficiency maximization of the transmitter while ensuring the transmitting efficiency by the blind matching module and the power supply power distribution module; the power additional efficiency of the transmitter is greatly improved through the GaN power module, the harmonic modulation circuit and the leakage current temperature compensation circuit.
Description
Technical Field
The utility model relates to a solid state transmitter field especially indicates a can effectively promote the high-power solid state transmitter of dual-frenquency of emission efficiency.
Background
The transmitter mainly functions to provide high-power radio frequency signals meeting requirements for radar, communication and electronic countermeasure systems, convert low-frequency alternating current energy into high-power radio frequency energy, and radiate the high-power radio frequency energy into space through antenna feeders. The transmitter is one of the important components of radar, communication and electronic countermeasure systems, and the performance of the transmitter directly affects the performance of the whole machine.
The transmitter consists of a radio frequency system, a modulator, a power supply, a system monitoring and cooling system and other circuits, wherein the radio frequency system comprises a radio frequency amplifier and radio frequency components. The radio frequency amplifier comprises a solid-state amplifier, a vacuum tube amplifier and the like; the radio frequency components comprise directional couplers, isolators/circulators, attenuators, phase shifters, detectors, arc waveguides, gas filled waveguides, straight waveguides, bent waveguides and the like. The microwave tubes are different in selection, and the modulator, the high-voltage power supply and the cooling form are also different.
The main performance indicators of the transmitter include: operating frequency, output power, power consumption, efficiency, reliability, etc.
The solid-state transmitter has the advantages of low working voltage, wide working frequency band, quick startup and shutdown, long service life and high reliability, but also has the problems of low power and inconvenient power regulation.
A new dual-band high-power solid-state transmitter that can effectively improve the transmission efficiency by solving the above-mentioned problems is desired.
SUMMERY OF THE UTILITY MODEL
The utility model provides a can effectively promote high-power solid state transmitter of dual-frenquency of emission efficiency has solved the inflexible problem of transmitter inefficiency, frequency control among the prior art.
The technical scheme of the utility model is realized like this: a dual-frequency high-power solid-state transmitter capable of effectively improving transmitting efficiency comprises a radio frequency system respectively connected with a modulator, a power supply, a micro-control system and a cooling system, wherein the modulator, the power supply and the cooling system are respectively connected with the micro-control system; the microwave signal synthesis module also comprises an electromagnetic compatibility unit; the power adjusting module is a GaN power module, and the GaN power module is connected with the micro-control system; the microwave signal synthesis module and the GaN power module are connected with a radio frequency system through a micro-control system; and the input high-voltage area, the voltage transformation area, the output voltage area and the low-voltage power supply area of the GaN power module transmit PWM pulse width signals, voltage detection signals, current detection signals and temperature detection signals through grooves.
Preferably, the microwave signal synthesis system comprises a standby microwave signal synthesis module, and the standby microwave signal synthesis module is connected with the radio frequency system through a micro control system
Furthermore, the microwave signal synthesis module comprises a signal generation unit, a signal synthesis unit and a signal detection unit, and the signal generation unit and the signal detection unit are connected with the micro-control system.
Furthermore, the system also comprises a blind matching module, wherein the blind matching module is connected with the modulator, the microwave signal synthesis module and the radio frequency system through a micro control system.
Furthermore, the blind matching module comprises a database unit for storing the mapping relation among the modulator, the microwave signal synthesis module and the radio frequency system, and a control unit connected with the micro-control system.
Preferably, the power supply further comprises a power supply power distribution module, and the power supply power distribution module is connected with the power supply through a micro-control system.
Further, the circuit also comprises a harmonic modulation circuit and a drain current temperature compensation circuit.
Preferably, the harmonic modulation circuit includes an input matching unit, an output matching unit, and a radio frequency transistor and a resonant circuit sequentially connected between the input matching unit and the output matching unit, a gate of the radio frequency transistor is connected to the input matching unit, a drain of the radio frequency transistor is connected to the resonant circuit, and the resonant circuit is configured to modulate a harmonic phase.
Preferably, the drain current temperature compensation circuit comprises a sampling tube of the same type as the power tube and a current proportional amplifier, and the sampling tube and the current proportional amplifier are connected with the micro-control device.
The utility model discloses a double-frequency high-power solid-state transmitter capable of effectively improving transmitting efficiency, which realizes the flexible and adjustable signal of the transmitter by arranging a microwave signal synthesis module, realizes the high power of the transmitter by a power regulation module, and realizes the maximization of the energy efficiency of the transmitter while ensuring the transmitting efficiency by a blind matching module and a power supply power distribution module; the utility model discloses a set up the power that gaN power module improved the transmitter greatly, improve the power additional efficiency of transmitter greatly through harmonic modulation circuit and leakage current temperature compensation circuit.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the description below are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without inventive labor.
FIG. 1: the module schematic diagram of the utility model;
wherein: 10: a micro-control system; 20: a modulator; 30: a power source; 40: a cooling system; 50: a microwave signal synthesis module; 51: a signal generating unit; 52: a signal synthesizing unit; 53: a signal detection unit; 60: a standby microwave signal synthesis module; 70: a radio frequency system; 80: a blind matching module; 90: and a power regulation module.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
The utility model discloses a can promote high-power solid-state transmitter of dual-frenquency of emission efficiency effectively, including the radio frequency system 70 who connects modulator 20, power 30, micro-control system 10 and cooling system 40 respectively, modulator 20, power 30 and cooling system 40 connect micro-control system 10 respectively, still include microwave signal synthesis module 50 and power regulation module 90; the power adjusting module 90 is a GaN power module, and the GaN power module is connected with the micro-control system 10; the microwave signal synthesis module 50 and the GaN power module are connected with a radio frequency system 70 through a micro-control system 10; and the input high-voltage area, the voltage transformation area, the output voltage area and the low-voltage power supply area of the GaN power module transmit PWM pulse width signals, voltage detection signals, current detection signals and temperature detection signals through grooves.
Preferably, a backup microwave signal synthesizing module 60 is included, and the backup microwave signal synthesizing module 60 is connected to the radio frequency system 70 through the micro control system 10.
Further, the microwave signal synthesis module 50 includes a signal generation unit 51, a signal synthesis unit 52 and a signal detection unit 53, and the signal generation unit 51 and the signal detection unit 53 are connected to the micro-control system 10. The signal generating unit 51 and the signal detecting unit 53 realize the synthesis and the reverse detection of the dual-frequency and multi-frequency signals.
Further, a blind matching module 80 is further included, and the blind matching module 80 is connected to the modulator 20, the microwave signal synthesizing module 50 and the radio frequency system 70 through the micro control system 10. The blind matching module 80 comprises a database unit for storing the mapping relationship among the modulator 20, the microwave signal synthesis module 50 and the radio frequency system 70, and a control unit connected with the micro-control system 10.
Preferably, the power supply 30 further comprises a power supply 30 power distribution module, and the power supply 30 power distribution module is connected with the power supply 30 through the micro-control system 10.
Further, the circuit also comprises a harmonic modulation circuit and a drain current temperature compensation circuit.
Preferably, the harmonic modulation circuit includes an input matching unit, an output matching unit, and a radio frequency transistor and a resonant circuit sequentially connected between the input matching unit and the output matching unit, a gate of the radio frequency transistor is connected to the input matching unit, a drain of the radio frequency transistor is connected to the resonant circuit, and the resonant circuit is configured to modulate a harmonic phase.
Preferably, the leakage current temperature compensation circuit comprises a sampling tube of the same type as the power tube and a current proportional amplifier, the sampling tube and the current proportional amplifier are connected with the micro-control device, the sampling tube performs equal proportion sampling, a current sink is generated by the current proportional amplifier, and the current sink is used for discharging leakage current of the power tube. Under the non-high temperature working condition, the sampling tube is normally shut off, and under the high temperature working condition, if the power tube has leakage current, the sampling tube can sample the leakage current; meanwhile, the leakage current compensation circuit is required to ensure that the leakage current compensation circuit can work as long as the input voltage exists. The problem of LDO under high temperature condition, the chip that leads to because the power tube leaks current is invalid is solved.
As shown in the schematic block diagram of the present invention, in the using process, the micro control system 10 is connected to the modulator 20, the power supply 30, the cooling system 40, the radio frequency system 70, the microwave signal synthesizing module 50 and the power adjusting module 90 respectively, and the signal generating unit 51, the signal synthesizing unit 52 and the signal detecting unit 53 of the microwave signal synthesizing module 50 perform the synthesis and reverse detection of dual-frequency and multi-frequency signals, thereby realizing dual-frequency and even multi-frequency transmission of the present invention;
the blind matching module 80 calls the mapping relation of the modulator 20, the microwave signal synthesis module 50 and the radio frequency system 70 stored in the database unit to realize automatic control of frequency adjustment, namely, the frequency adjustment is consistent with the setting of the control unit;
the power adjusting module 90 is connected to the rf system 70 through the micro-control system 10, and automatically adjusts the transmitting power of the rf system 70 according to the transmitting frequency.
The power supply 30 power distribution module is connected with the power supply 30 through the micro-control system 10, so that the energy efficiency of the transmitter is maximized.
The standby microwave signal synthesis module 60 can be used as a device for dual signal synthesis and also can be used as a replacement device for the maintenance of the microwave signal synthesis module 50, so that the maintenance and the repair of the system are ensured without stopping.
The utility model discloses a double-frequency high-power solid-state transmitter capable of effectively improving transmitting efficiency, which realizes the flexible and adjustable signal of the transmitter by arranging a microwave signal synthesis module 50, and realizes the high power of the transmitter by a power regulation module 90, and realizes the energy efficiency maximization of the transmitter by a blind matching module 80 and a power distribution module of a power supply 30 while ensuring the transmitting efficiency; the utility model discloses a set up the power that gaN power module improved the transmitter greatly, improve the power additional efficiency of transmitter greatly through harmonic modulation circuit and leakage current temperature compensation circuit.
Of course, without departing from the spirit and essence of the present invention, those skilled in the art should be able to make various corresponding changes and modifications according to the present invention, and these corresponding changes and modifications should fall within the scope of the appended claims.
Claims (9)
1. A dual-frequency high-power solid-state transmitter capable of effectively improving transmitting efficiency comprises a radio frequency system respectively connected with a modulator, a power supply, a micro-control system and a cooling system, wherein the modulator, the power supply and the cooling system are respectively connected with the micro-control system, and the dual-frequency high-power solid-state transmitter is characterized in that: the microwave signal synthesis module and the power regulation module are also included;
the microwave signal synthesis module also comprises an electromagnetic compatibility unit;
the power adjusting module is a GaN power module, and the GaN power module is connected with the micro-control system;
the microwave signal synthesis module and the GaN power module are connected with a radio frequency system through a micro-control system;
and the input high-voltage area, the voltage transformation area, the output voltage area and the low-voltage power supply area of the GaN power module transmit PWM pulse width signals, voltage detection signals, current detection signals and temperature detection signals through grooves.
2. The dual-band high-power solid-state transmitter of claim 1, wherein the dual-band high-power solid-state transmitter further comprises: the microwave signal synthesis system comprises a standby microwave signal synthesis module, wherein the standby microwave signal synthesis module is connected with a radio frequency system through a micro control system.
3. A dual-band high-power solid-state transmitter according to claim 1 or 2, wherein the dual-band high-power solid-state transmitter comprises: the microwave signal synthesis module comprises a signal generation unit, a signal synthesis unit and a signal detection unit, wherein the signal generation unit and the signal detection unit are connected with the micro-control system.
4. The dual-band high-power solid-state transmitter of claim 3, wherein the dual-band high-power solid-state transmitter further comprises: the microwave signal synthesis system further comprises a blind matching module, and the blind matching module is connected with the modulator, the microwave signal synthesis module and the radio frequency system through the micro-control system.
5. The dual-band high-power solid-state transmitter of claim 4, wherein the dual-band high-power solid-state transmitter further comprises: the blind matching module comprises a database unit for storing mapping relations among the modulator, the microwave signal synthesis module and the radio frequency system, and a control unit connected with the micro-control system.
6. The dual-band high-power solid-state transmitter according to claim 4 or 5, wherein the dual-band high-power solid-state transmitter comprises: the power supply also comprises a power supply power distribution module, and the power supply power distribution module is connected with the power supply through a micro-control system.
7. The dual-band high-power solid-state transmitter of claim 6, wherein the dual-band high-power solid-state transmitter further comprises: the circuit also comprises a harmonic modulation circuit and a leakage current temperature compensation circuit.
8. The dual-band high-power solid-state transmitter of claim 7, wherein the dual-band high-power solid-state transmitter further comprises: the harmonic modulation circuit comprises an input matching unit, an output matching unit, a radio-frequency transistor and a resonant circuit, wherein the radio-frequency transistor and the resonant circuit are sequentially connected between the input matching unit and the output matching unit, a grid electrode of the radio-frequency transistor is connected with the input matching unit, a drain electrode of the radio-frequency transistor is connected with the resonant circuit, and the resonant circuit is used for modulating a harmonic phase.
9. The dual-band high-power solid-state transmitter of claim 7, wherein the dual-band high-power solid-state transmitter further comprises: the leakage current temperature compensation circuit comprises a sampling tube and a current proportional amplifier which are of the same type as the power tube, and the sampling tube and the current proportional amplifier are connected with the micro-control device.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202222014424.6U CN218071482U (en) | 2022-08-02 | 2022-08-02 | Double-frequency high-power solid-state transmitter capable of effectively improving transmission efficiency |
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| CN202222014424.6U CN218071482U (en) | 2022-08-02 | 2022-08-02 | Double-frequency high-power solid-state transmitter capable of effectively improving transmission efficiency |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115808614A (en) * | 2023-02-09 | 2023-03-17 | 四川省华盾防务科技股份有限公司 | Power amplifier chip thermal performance monitoring method, system and storage medium |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115808614A (en) * | 2023-02-09 | 2023-03-17 | 四川省华盾防务科技股份有限公司 | Power amplifier chip thermal performance monitoring method, system and storage medium |
| CN115808614B (en) * | 2023-02-09 | 2023-05-16 | 四川省华盾防务科技股份有限公司 | Power amplifier chip thermal performance monitoring method, system and storage medium |
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