CN115808614B - Power amplifier chip thermal performance monitoring method, system and storage medium - Google Patents
Power amplifier chip thermal performance monitoring method, system and storage medium Download PDFInfo
- Publication number
- CN115808614B CN115808614B CN202310090840.0A CN202310090840A CN115808614B CN 115808614 B CN115808614 B CN 115808614B CN 202310090840 A CN202310090840 A CN 202310090840A CN 115808614 B CN115808614 B CN 115808614B
- Authority
- CN
- China
- Prior art keywords
- power amplifier
- amplifier chip
- time
- real
- junction temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses a method, a system and a storage medium for monitoring thermal performance of a power amplifier chip, which relate to the technical field of chip thermal monitoring and comprise the following steps: acquiring performance parameters of a power amplifier chip; calculating real-time junction temperature data of the power amplifier chip; establishing a real-time junction temperature-operation time data table of the power amplifier chip; establishing a power amplifier chip fault risk prediction model; inputting data in a real-time junction temperature-running time data table of the power amplifier chip into a power amplifier chip fault risk prediction model to obtain a risk probability value of the power amplifier chip; and judging whether the risk probability value of the power amplifier chip is larger than a preset value. The invention has the advantages that: the power amplifier chip thermal performance monitoring scheme can timely maintain the power amplifier chip in the power amplifier in advance, troubleshoot the fault risk, and avoid the power amplifier halt caused by the fault of the power amplifier chip to cause larger loss.
Description
Technical Field
The invention relates to the technical field of chip thermal monitoring, in particular to a method, a system and a storage medium for monitoring thermal performance of a power amplifier chip.
Background
A Power Amplifier (PA) refers to an Amplifier that can generate a maximum Power output to drive a load under a given distortion rate. The power amplifier plays a role of a pivot of organization and coordination in the whole system, and the power amplifier dominates whether the whole system can provide good signal output to a certain extent.
In the running process of the power amplifier, the thermal performance monitoring of the power amplifier chip is a performance index which intuitively reflects the running state of the power amplifier chip, the thermal performance monitoring of the power amplifier chip in the prior art is usually only aimed at the temperature data acquisition of the power amplifier chip, the analysis processing of the temperature data of the power amplifier chip is lacking, the fault risk prediction of the power amplifier chip is lacking, and the pre-maintenance and the fault risk investigation of the power amplifier are difficult to realize.
Disclosure of Invention
In order to solve the technical problems, the technical scheme solves the problems that in the prior art, the thermal performance monitoring for the power amplifier chip is usually only aimed at the temperature data acquisition of the power amplifier chip, the analysis processing of the temperature data for the power amplifier chip is lacking, the fault risk prediction for the power amplifier chip is lacking, and the pre-maintenance and the fault risk investigation for the power amplifier are difficult to realize.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a method for monitoring thermal performance of a power amplifier chip, comprising:
acquiring performance parameters of the power amplifier chip, wherein the performance parameters comprise the maximum junction temperature of the power amplifier chip and the heat radiation thermal resistance of the power amplifier chip;
the shell temperature of the power amplifier chip and the running power of the power amplifier chip are monitored in real time, and real-time junction temperature data of the power amplifier chip are calculated according to the shell temperature of the power amplifier chip and the running power of the power amplifier chip;
recording real-time junction temperature data of the power amplifier chip, and establishing a real-time junction temperature-operation time data table of the power amplifier chip;
establishing a power amplifier chip fault risk prediction model, wherein the power amplifier chip fault risk prediction model takes a real-time junction temperature-operation time data table of a power amplifier chip as input and takes the probability of the power amplifier chip fault risk as output;
inputting data in a real-time junction temperature-running time data table of the power amplifier chip into a power amplifier chip fault risk prediction model to obtain a risk probability value of the power amplifier chip;
comparing the risk probability value of the power amplifier chip with a preset value, and judging whether the risk probability value of the power amplifier chip is larger than the preset value;
if yes, the chip fault risk is judged to be high, a high risk signal is output, and if not, the chip fault risk is judged to be low, and a low risk signal is output.
Preferably, the method for calculating the real-time junction temperature data of the power amplifier chip comprises the following steps:
the shell temperature of the power amplifier chip and the running power of the power amplifier chip are monitored in real time, and shell temperature data of the power amplifier chip and running power data of the power amplifier chip are obtained;
calculating real-time junction temperature data of the power amplifier chip according to a real-time junction temperature formula, wherein the real-time junction temperature formula is as follows:
in the method, in the process of the invention,
for the real-time junction temperature data of the power amplifier chip at time t,/for the power amplifier chip>
For real-time shell temperature data of the amplifier chip at time t,/for the amplifier chip>
For the operating power data of the power amplifier chip at time t, < >>
Is the heat dissipation resistance of the power amplifier chip.
Preferably, the real-time junction temperature data of the recording power amplifier chip specifically includes:
judging whether the real-time junction temperature data of the power amplifier chip is larger than the maximum junction temperature of the power amplifier chip or not;
if yes, the moment corresponding to the real-time junction temperature data of the power amplifier chip is marked as excess moment, and if not, the moment corresponding to the real-time junction temperature data of the power amplifier chip is marked as normal moment;
and (3) the real-time junction temperature data of the power amplifier chip are in one-to-one correspondence with the corresponding moments, and a real-time junction temperature-operation time data table is established.
Preferably, the risk probability value calculation step of the power amplifier chip includes:
analyzing the data in the real-time junction temperature-running time data to obtain a plurality of excess time periods in the running process of the power amplifier chip;
calculating excess indexes of the power amplifier chip according to the real-time junction temperature data of the power amplifier chip in a plurality of excess time periods;
inputting the excess index of the power amplifier chip and the working time of the power amplifier chip into a risk probability value calculation formula to obtain a risk probability value of the power amplifier chip;
the risk probability value calculation formula is as follows:
in the method, in the process of the invention,
for the risk probability value of the power amplifier chip, < +.>
For the excess index of the power amplifier chip, < +.>
For the operating time of the power amplifier chip, +.>
All are coefficients of a risk probability value calculation formula.
Preferably, the calculation process of the coefficient of the risk probability value calculation formula is as follows:
acquiring a real-time junction temperature-running time historical data table of a plurality of groups of power amplifier chips with the same model;
grouping the real-time junction temperature-operation time historical data tables of the power amplifier chips with the same model according to whether the power amplifier chips are faulty or not to obtain a plurality of groups of non-faulty real-time junction temperature-operation time historical data and faulty real-time junction temperature-operation time historical data;
calculating a historical excess index according to the real-time junction temperature-running time historical data table;
according to the historical excess index and working time of several groups of non-fault real-time junction temperature-running time historical data and fault real-time junction temperature-running time historical data, using maximum likelihood method to make said operation
Is calculated by the computer. />
Preferably, the calculating process of the excess index of the power amplifier chip is as follows:
calculating the excess index of the power amplifier chip in each excess period according to the excess index calculation formula;
calculating according to an excess index calculation formula of a plurality of excess time periods to obtain an excess index of the power amplifier chip;
wherein, the excess index calculation formula is:
in the method, in the process of the invention,
for the excess index of the power amplifier chip in the ith excess period, +.>
For the start time of the ith excess period, < +.>
For the termination time of the ith excess period, < +.>
Is the ithReal-time junction temperature data during excess time period, < ->
Maximum junction temperature data for the power amplifier chip;
the excess index calculation formula is as follows:
in the method, in the process of the invention,
for the excess index of the power amplifier chip, < +.>
Is the number of excess time periods.
Furthermore, a system for monitoring thermal performance of a power amplifier chip is provided, which is configured to implement the method for monitoring thermal performance of a power amplifier chip, and is characterized by comprising:
the processor is used for calculating real-time junction temperature data of the power amplifier chip, establishing a real-time junction temperature-running time data table of the power amplifier chip, establishing a power amplifier chip fault risk prediction model, calculating a risk probability value of the power amplifier chip and judging whether the risk probability value of the power amplifier chip is larger than a preset value or not;
the memory is coupled with the processor and is used for storing the power amplifier chip fault risk prediction model and a real-time junction temperature-running time historical data table of the power amplifier chip;
the monitoring module is electrically connected with the processor and is used for monitoring the shell temperature of the power amplifier chip and the running power of the power amplifier chip in real time;
the output module is electrically connected with the processor and is used for outputting high-risk signals or low-risk signals.
Optionally, the processor is integrated with:
the first calculation unit is used for calculating real-time junction temperature data of the power amplifier chip according to the shell temperature of the power amplifier chip and the running power of the power amplifier chip;
the first judging unit is used for judging whether the real-time junction temperature data of the power amplifier chip is larger than the maximum junction temperature of the power amplifier chip or not;
the data processing unit is used for establishing a real-time junction temperature-operation time data table;
the model calculation unit is used for establishing and solving a power amplifier chip fault risk prediction model;
the second calculation unit is used for calculating the risk probability value of the power amplifier chip;
and the second judging unit is used for judging whether the risk probability value of the power amplifier chip is larger than a preset value.
Optionally, the monitoring module includes:
the temperature detection unit is used for monitoring the shell temperature of the power amplifier chip;
and the power detection unit is used for detecting and collecting the operation power of the power amplifier chip.
Still further, a computer readable storage medium is provided, on which a computer readable program is stored, characterized in that the computer readable program when called performs the power amplifier chip thermal performance monitoring method as described above.
Compared with the prior art, the invention has the beneficial effects that:
the invention provides a power amplifier chip thermal performance monitoring scheme, which is used for analyzing based on collected power amplifier chip thermal performance data, dividing the running state of a power amplifier chip into an excess time period and a normal time period, calculating a fault risk value of the power amplifier chip by combining an excess index of the excess time period and the working time of the power amplifier chip, judging whether the power amplifier chip has a fault risk according to the size of the predicted calculated fault risk value of the power amplifier chip, further realizing risk monitoring for the power amplifier chip, timely pre-maintaining the power amplifier chip in the power amplifier, checking the fault risk, and avoiding the power amplifier from being stopped due to the fault of the power amplifier chip and causing larger loss.
Drawings
FIG. 1 is a block diagram of a thermal performance monitoring system for a power amplifier chip according to the present invention;
FIG. 2 is a flow chart of a method for monitoring thermal performance of a power amplifier chip according to the present invention;
FIG. 3 is a flow chart of a method for calculating real-time junction temperature data according to the present invention;
FIG. 4 is a flow chart of a method for recording junction temperature data in real time of a power amplifier chip according to the present invention;
FIG. 5 is a flowchart of a risk probability value calculation method for a power amplifier chip according to the present invention;
FIG. 6 is a flowchart of a method for calculating coefficients of a risk probability value calculation formula according to the present invention
Fig. 7 is a flowchart of a method for calculating an excess index of a power amplifier chip according to the present invention.
Detailed Description
The following description is presented to enable one of ordinary skill in the art to make and use the invention. The preferred examples in the following description are given by way of example only and other obvious variations will occur to those skilled in the art.
Referring to fig. 1, a system for monitoring thermal performance of a power amplifier chip, comprising:
the processor is used for calculating real-time junction temperature data of the power amplifier chip, establishing a real-time junction temperature-running time data table of the power amplifier chip, establishing a power amplifier chip fault risk prediction model, calculating a risk probability value of the power amplifier chip and judging whether the risk probability value of the power amplifier chip is larger than a preset value or not;
the memory is coupled with the processor and is used for storing the power amplifier chip fault risk prediction model and a real-time junction temperature-running time historical data table of the power amplifier chip;
the monitoring module is electrically connected with the processor and is used for monitoring the shell temperature of the power amplifier chip and the running power of the power amplifier chip in real time;
the output module is electrically connected with the processor and is used for outputting high-risk signals or low-risk signals.
The processor is internally integrated with:
the first calculation unit is used for calculating real-time junction temperature data of the power amplifier chip according to the shell temperature of the power amplifier chip and the running power of the power amplifier chip;
the first judging unit is used for judging whether the real-time junction temperature data of the power amplifier chip is larger than the maximum junction temperature of the power amplifier chip or not;
the data processing unit is used for establishing a real-time junction temperature-operation time data table;
the model calculation unit is used for establishing and solving a power amplifier chip fault risk prediction model;
the second calculation unit is used for calculating the risk probability value of the power amplifier chip;
and the second judging unit is used for judging whether the risk probability value of the power amplifier chip is larger than a preset value.
The monitoring module includes:
the temperature detection unit is used for monitoring the shell temperature of the power amplifier chip;
and the power detection unit is used for detecting and collecting the operation power of the power amplifier chip.
The working process of the power amplifier chip thermal performance monitoring system is as follows:
step one: the model calculation unit invokes real-time junction temperature-running time historical data tables of power amplifier chips of different types from the memory, establishes power amplifier chip fault risk prediction models of different types, and stores the power amplifier chip fault risk prediction models into the memory;
step two: the temperature detection unit and the power detection unit monitor the shell temperature of the power amplifier chip and the running power of the power amplifier chip in real time, and transmit detection data to the processor;
step three: the first calculation unit calculates real-time junction temperature data of the power amplifier chip according to the detection data;
step four: the first judging unit judges whether the real-time junction temperature data of the power amplifier chip is larger than the maximum junction temperature of the power amplifier chip or not;
step five: the data processing unit establishes a real-time junction temperature-operation time data table according to the judging result of the first judging unit;
step six: the second calculation unit retrieves the power amplifier chip fault risk prediction model from the memory and calculates a risk probability value of the power amplifier chip according to the real-time junction temperature-running time data table;
step seven: the second judging unit judges whether the risk probability value of the power amplifier chip is larger than a preset value;
step eight: the output module outputs a high risk signal or a low risk signal according to the judging result of the second judging unit.
Referring to fig. 2, further, in combination with the above system for monitoring thermal performance of a power amplifier chip, the present disclosure proposes a method for monitoring thermal performance of a power amplifier chip, which includes:
acquiring performance parameters of the power amplifier chip, wherein the performance parameters comprise the maximum junction temperature of the power amplifier chip and the heat radiation thermal resistance of the power amplifier chip;
the shell temperature of the power amplifier chip and the running power of the power amplifier chip are monitored in real time, and real-time junction temperature data of the power amplifier chip are calculated according to the shell temperature of the power amplifier chip and the running power of the power amplifier chip;
recording real-time junction temperature data of the power amplifier chip, and establishing a real-time junction temperature-operation time data table of the power amplifier chip;
establishing a power amplifier chip fault risk prediction model, wherein the power amplifier chip fault risk prediction model takes a real-time junction temperature-running time data table of a power amplifier chip as input and takes the power amplifier chip fault risk probability as output;
inputting data in a real-time junction temperature-running time data table of the power amplifier chip into a power amplifier chip fault risk prediction model to obtain a risk probability value of the power amplifier chip;
comparing the risk probability value of the power amplifier chip with a preset value, and judging whether the risk probability value of the power amplifier chip is larger than the preset value;
if yes, the chip fault risk is judged to be high, a high risk signal is output, and if not, the chip fault risk is judged to be low, and a low risk signal is output.
Based on the collected thermal performance data of the power amplifier chip, analyzing, dividing the running state of the power amplifier chip into an excess time period and a normal time period, calculating a fault risk value of the power amplifier chip by combining an excess index of the excess time period and the working time of the power amplifier chip, judging whether the power amplifier chip has a fault risk according to the predicted and calculated fault risk value of the power amplifier chip, and further realizing risk monitoring aiming at the power amplifier chip.
Referring to fig. 3, the method for calculating the real-time junction temperature data of the power amplifier chip includes:
the shell temperature of the power amplifier chip and the running power of the power amplifier chip are monitored in real time, and shell temperature data of the power amplifier chip and running power data of the power amplifier chip are obtained;
calculating real-time junction temperature data of the power amplifier chip according to a real-time junction temperature formula, wherein the real-time junction temperature formula is as follows:
in the method, in the process of the invention,
for the real-time junction temperature data of the power amplifier chip at time t,/for the power amplifier chip>
For real-time shell temperature data of the amplifier chip at time t,/for the amplifier chip>
For the operating power data of the power amplifier chip at time t, < >>
Is the heat dissipation resistance of the power amplifier chip.
Because the internal junction temperature of the power amplifier chip cannot be measured in a normal state, the internal junction temperature of the power amplifier chip is calculated by measuring the shell temperature of the power amplifier chip and combining the heat radiation thermal resistance of the power amplifier chip.
Referring to fig. 4, the recording of real-time junction temperature data of the power amplifier chip specifically includes:
judging whether the real-time junction temperature data of the power amplifier chip is larger than the maximum junction temperature of the power amplifier chip or not;
if yes, the moment corresponding to the real-time junction temperature data of the power amplifier chip is marked as excess moment, and if not, the moment corresponding to the real-time junction temperature data of the power amplifier chip is marked as normal moment;
and (3) the real-time junction temperature data of the power amplifier chip are in one-to-one correspondence with the corresponding moments, and a real-time junction temperature-operation time data table is established.
The one-to-one correspondence between the real-time junction temperature and the operation time is established, so that the operation state data of the power amplifier chip at each moment can be obtained, and the data support is provided for drawing the real-time junction temperature-operation time curve by establishing a real-time junction temperature-operation time data table.
Referring to fig. 5, the risk probability value calculation steps of the power amplifier chip are as follows:
analyzing the data in the real-time junction temperature-running time data to obtain a plurality of excess time periods in the running process of the power amplifier chip;
calculating excess indexes of the power amplifier chip according to the real-time junction temperature data of the power amplifier chip in a plurality of excess time periods;
inputting the excess index of the power amplifier chip and the working time of the power amplifier chip into a risk probability value calculation formula to obtain a risk probability value of the power amplifier chip;
the risk probability value calculation formula is as follows:
in the method, in the process of the invention,
for the risk probability value of the power amplifier chip, < +.>
For the excess index of the power amplifier chip, < +.>
For the operating time of the power amplifier chip, +.>
All are coefficients of a risk probability value calculation formula;
referring to fig. 6, the calculation process of the coefficient of the risk probability value calculation formula is as follows:
acquiring a real-time junction temperature-running time historical data table of a plurality of groups of power amplifier chips with the same model;
grouping the real-time junction temperature-operation time historical data tables of the power amplifier chips with the same model according to whether the power amplifier chips are faulty or not to obtain a plurality of groups of non-faulty real-time junction temperature-operation time historical data and faulty real-time junction temperature-operation time historical data;
calculating a historical excess index according to the real-time junction temperature-running time historical data table;
according to the historical excess index and working time of several groups of non-fault real-time junction temperature-running time historical data and fault real-time junction temperature-running time historical data, using maximum likelihood method to make said operation
Is calculated by the computer.
The risk probability value calculation formula provided by the scheme is established based on the Logistic regression model principle, a fault risk prediction model is established, and the Logistic regression model is a generalized linear regression analysis model and is commonly used in the fields of data mining, result prediction and the like;
according to the risk probability value calculation formula provided by the scheme, the probability of the power amplifier chip failure is calculated by calculating the excess index of the power amplifier chip in the excess operation period and combining the working time of the power amplifier chip, and the probability of the power amplifier chip failure is judged according to the probability of the power amplifier chip failure which is calculated by prediction, so that the power amplifier chip in the power amplifier can be maintained in advance in time, and the failure risk is checked;
in the scheme, an independent risk probability value calculation formula is established for each power amplifier chip of different types in the power amplifier, and the probability of failure of each power amplifier chip of different types is predicted and calculated through the corresponding risk probability value calculation formula.
Referring to fig. 7, the process of calculating the excess index of the power amplifier chip is as follows:
calculating the excess index of the power amplifier chip in each excess period according to the excess index calculation formula;
calculating according to an excess index calculation formula of a plurality of excess time periods to obtain an excess index of the power amplifier chip;
wherein, excess index calculation formula is:
in the method, in the process of the invention,
for the excess index of the power amplifier chip in the ith excess period, +.>
For the start time of the ith excess period, < +.>
For the termination time of the ith excess period, < +.>
For the real-time junction temperature data in the ith excess period,/th>
Maximum junction temperature data for the power amplifier chip;
the excess index calculation formula is:
in the method, in the process of the invention,
for the excess index of the power amplifier chip, < +.>
Is the number of excess time periods.
For the calculation of the excess index, in the scheme, the excess value of the junction temperature in the excess period is calculated, and the integral calculation is performed on the excess time, so that the larger the excess value of the junction temperature in the excess period is, the longer the excess time is, the larger the damage to the power amplifier chip is, and the excess index of the power amplifier chip in the current running state can be obtained by summing the excess indexes of the excess periods.
Still further, the present disclosure also provides a computer readable storage medium having a computer readable program stored thereon, wherein the computer readable program when invoked performs the method for monitoring thermal performance of a power amplifier chip as described above.
It is understood that the computer readable storage medium may be a magnetic medium, e.g., floppy disk, hard disk, tape; optical media such as DVD; or a semiconductor medium such as a solid state disk SolidStateDisk, SSD, etc.
In summary, the invention has the advantages that: the power amplifier chip thermal performance monitoring scheme can timely maintain the power amplifier chip in the power amplifier in advance, troubleshoot the fault risk, and avoid the power amplifier halt caused by the fault of the power amplifier chip to cause larger loss.
The foregoing has shown and described the basic principles, principal features and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the foregoing examples, which are set forth in the foregoing description and are merely illustrative of the principles of the invention, and that various changes and modifications may be made therein without departing from the spirit and scope of the invention, which is defined by the appended claims. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (8)
1. A method for monitoring thermal performance of a power amplifier chip, comprising:
acquiring performance parameters of the power amplifier chip, wherein the performance parameters comprise the maximum junction temperature of the power amplifier chip and the heat radiation thermal resistance of the power amplifier chip;
the shell temperature of the power amplifier chip and the running power of the power amplifier chip are monitored in real time, and real-time junction temperature data of the power amplifier chip are calculated according to the shell temperature of the power amplifier chip and the running power of the power amplifier chip;
recording real-time junction temperature data of the power amplifier chip, and establishing a real-time junction temperature-operation time data table of the power amplifier chip;
establishing a power amplifier chip fault risk prediction model, wherein the power amplifier chip fault risk prediction model takes a real-time junction temperature-operation time data table of a power amplifier chip as input and takes the probability of the power amplifier chip fault risk as output;
inputting data in a real-time junction temperature-running time data table of the power amplifier chip into a power amplifier chip fault risk prediction model to obtain a risk probability value of the power amplifier chip;
comparing the risk probability value of the power amplifier chip with a preset value, and judging whether the risk probability value of the power amplifier chip is larger than the preset value;
if yes, judging that the chip fault risk is high, outputting a high risk signal, if not, judging that the chip fault risk is low, and outputting a low risk signal;
the method for calculating the real-time junction temperature data of the power amplifier chip comprises the following steps:
the shell temperature of the power amplifier chip and the running power of the power amplifier chip are monitored in real time, and shell temperature data of the power amplifier chip and running power data of the power amplifier chip are obtained;
calculating real-time junction temperature data of the power amplifier chip according to a real-time junction temperature formula, wherein the real-time junction temperature formula is as follows:
in the method, in the process of the invention,
for the real-time junction temperature data of the power amplifier chip at time t,/for the power amplifier chip>
For the amplifier chip at time tReal-time shell temperature data->
For the operating power data of the power amplifier chip at time t, < >>
Heat dissipation resistance of the power amplifier chip;
the real-time junction temperature data of the recording power amplifier chip specifically comprises:
judging whether the real-time junction temperature data of the power amplifier chip is larger than the maximum junction temperature of the power amplifier chip or not;
if yes, the moment corresponding to the real-time junction temperature data of the power amplifier chip is marked as excess moment, and if not, the moment corresponding to the real-time junction temperature data of the power amplifier chip is marked as normal moment;
and (3) the real-time junction temperature data of the power amplifier chip are in one-to-one correspondence with the corresponding moments, and a real-time junction temperature-operation time data table is established.
2. The method for monitoring thermal performance of a power amplifier chip according to claim 1, wherein the risk probability value calculation step of the power amplifier chip is as follows:
analyzing the data in the real-time junction temperature-running time data to obtain a plurality of excess time periods in the running process of the power amplifier chip;
calculating excess indexes of the power amplifier chip according to the real-time junction temperature data of the power amplifier chip in a plurality of excess time periods;
inputting the excess index of the power amplifier chip and the working time of the power amplifier chip into a risk probability value calculation formula to obtain a risk probability value of the power amplifier chip;
the risk probability value calculation formula is as follows:
in the method, in the process of the invention,
for the risk probability value of the power amplifier chip, < +.>
For the excess index of the power amplifier chip, < +.>
For the operating time of the power amplifier chip, +.>
All are coefficients of a risk probability value calculation formula.
3. The method for monitoring thermal performance of a power amplifier chip according to claim 2, wherein the calculation process of the coefficient of the risk probability value calculation formula is:
acquiring a real-time junction temperature-running time historical data table of a plurality of groups of power amplifier chips with the same model;
grouping the real-time junction temperature-operation time historical data tables of the power amplifier chips with the same model according to whether the power amplifier chips are faulty or not to obtain a plurality of groups of non-faulty real-time junction temperature-operation time historical data and faulty real-time junction temperature-operation time historical data;
calculating a historical excess index according to the real-time junction temperature-running time historical data table;
according to the historical excess index and working time of several groups of non-fault real-time junction temperature-running time historical data and fault real-time junction temperature-running time historical data, using maximum likelihood method to make said operation
Is calculated by the computer.
4. A method for monitoring thermal performance of a power amplifier chip according to claim 3, wherein the power amplifier chip excess index is calculated by:
calculating the excess index of the power amplifier chip in each excess period according to the excess index calculation formula;
calculating according to an excess index calculation formula of a plurality of excess time periods to obtain an excess index of the power amplifier chip;
wherein, the excess index calculation formula is:
in the method, in the process of the invention,
for the excess index of the power amplifier chip in the ith excess period, +.>
For the start time of the ith excess period, < +.>
For the termination time of the ith excess period, < +.>
For the real-time junction temperature data in the ith excess period,/th>
Maximum junction temperature data for the power amplifier chip;
the excess index calculation formula is as follows:
in the method, in the process of the invention,
is a power amplifier coreExcessive index of tablet, dai>
Is the number of excess time periods.
5. A power amplifier chip thermal performance monitoring system for implementing the power amplifier chip thermal performance monitoring method of any one of claims 1-4, comprising:
the processor is used for calculating real-time junction temperature data of the power amplifier chip, establishing a real-time junction temperature-running time data table of the power amplifier chip, establishing a power amplifier chip fault risk prediction model, calculating a risk probability value of the power amplifier chip and judging whether the risk probability value of the power amplifier chip is larger than a preset value or not;
the memory is coupled with the processor and is used for storing the power amplifier chip fault risk prediction model and a real-time junction temperature-running time historical data table of the power amplifier chip;
the monitoring module is electrically connected with the processor and is used for monitoring the shell temperature of the power amplifier chip and the running power of the power amplifier chip in real time;
the output module is electrically connected with the processor and is used for outputting high-risk signals or low-risk signals.
6. The power amplifier chip thermal performance monitoring system of claim 5, wherein the processor is integrated therein with:
the first calculation unit is used for calculating real-time junction temperature data of the power amplifier chip according to the shell temperature of the power amplifier chip and the running power of the power amplifier chip;
the first judging unit is used for judging whether the real-time junction temperature data of the power amplifier chip is larger than the maximum junction temperature of the power amplifier chip or not;
the data processing unit is used for establishing a real-time junction temperature-operation time data table;
the model calculation unit is used for establishing and solving a power amplifier chip fault risk prediction model;
the second calculation unit is used for calculating the risk probability value of the power amplifier chip;
and the second judging unit is used for judging whether the risk probability value of the power amplifier chip is larger than a preset value.
7. The power amplifier chip thermal performance monitoring system of claim 6, wherein the monitoring module comprises:
the temperature detection unit is used for monitoring the shell temperature of the power amplifier chip;
and the power detection unit is used for detecting and collecting the operation power of the power amplifier chip.
8. A computer readable storage medium having stored thereon a computer readable program, wherein the computer readable program when invoked performs the power amplifier chip thermal performance monitoring method of any one of claims 1-4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310090840.0A CN115808614B (en) | 2023-02-09 | 2023-02-09 | Power amplifier chip thermal performance monitoring method, system and storage medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310090840.0A CN115808614B (en) | 2023-02-09 | 2023-02-09 | Power amplifier chip thermal performance monitoring method, system and storage medium |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115808614A CN115808614A (en) | 2023-03-17 |
| CN115808614B true CN115808614B (en) | 2023-05-16 |
Family
ID=85487866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202310090840.0A Active CN115808614B (en) | 2023-02-09 | 2023-02-09 | Power amplifier chip thermal performance monitoring method, system and storage medium |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115808614B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002048830A (en) * | 2000-08-07 | 2002-02-15 | Matsushita Electric Ind Co Ltd | Method and device for measuring output characteristics of power amplifier |
| WO2004040751A1 (en) * | 2002-11-01 | 2004-05-13 | N & L Limited | Amplifier assembly |
| CN114384399A (en) * | 2022-01-04 | 2022-04-22 | 上海航天电子通讯设备研究所 | Method for testing chip junction temperature of power amplifier |
| CN217112604U (en) * | 2021-12-23 | 2022-08-02 | 科大讯飞股份有限公司 | Power amplifier's test system |
| CN218071482U (en) * | 2022-08-02 | 2022-12-16 | 四川省华盾防务科技股份有限公司 | Double-frequency high-power solid-state transmitter capable of effectively improving transmission efficiency |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107870296A (en) * | 2016-09-23 | 2018-04-03 | 中兴通讯股份有限公司 | Power tube junction temperature detection device and method in Doherty circuits |
| CN111293671B (en) * | 2020-02-07 | 2021-01-08 | 山东大学 | Power device thermal protection and early warning method and system based on junction temperature prediction |
| CN113162558B (en) * | 2021-03-15 | 2021-12-28 | 深圳市时代速信科技有限公司 | Digital predistortion method and device |
| CN113203928B (en) * | 2021-03-31 | 2022-10-21 | 中国南方电网有限责任公司超高压输电公司 | Junction temperature monitoring method, device, equipment and storage medium of power device |
| CN115425764B (en) * | 2022-11-04 | 2022-12-30 | 广州泓盈信息科技有限公司 | Real-time monitoring method, system and storage medium for intelligent network risk of electric power system |
| CN115630847B (en) * | 2022-12-07 | 2023-03-28 | 四川省华盾防务科技股份有限公司 | Transceiving assembly detection method and system based on data prediction and storage medium |
-
2023
- 2023-02-09 CN CN202310090840.0A patent/CN115808614B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002048830A (en) * | 2000-08-07 | 2002-02-15 | Matsushita Electric Ind Co Ltd | Method and device for measuring output characteristics of power amplifier |
| WO2004040751A1 (en) * | 2002-11-01 | 2004-05-13 | N & L Limited | Amplifier assembly |
| CN217112604U (en) * | 2021-12-23 | 2022-08-02 | 科大讯飞股份有限公司 | Power amplifier's test system |
| CN114384399A (en) * | 2022-01-04 | 2022-04-22 | 上海航天电子通讯设备研究所 | Method for testing chip junction temperature of power amplifier |
| CN218071482U (en) * | 2022-08-02 | 2022-12-16 | 四川省华盾防务科技股份有限公司 | Double-frequency high-power solid-state transmitter capable of effectively improving transmission efficiency |
Non-Patent Citations (1)
| Title |
|---|
| 硅基MOSFET 功率放大器TO－3 封装热性能研究;李平 等;《半导体技术》;第46卷(第4期);310-315 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115808614A (en) | 2023-03-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102522011B1 (en) | Method and apparatus, device and storage medium for determining the operating state of a photovoltaic array | |
| CN115425764A (en) | Real-time monitoring method, system and storage medium for intelligent network risk of electric power system | |
| CN108549001B (en) | System and method for detecting strain state of power electronic module | |
| CN116775731B (en) | Sliding window-based calculation method for fault-connection trace-back electric quantity of three-phase electric energy meter | |
| CN107943654A (en) | A kind of method of quick determining server environmental temperature monitoring abnormal cause | |
| CN115808614B (en) | Power amplifier chip thermal performance monitoring method, system and storage medium | |
| US20230280240A1 (en) | Abnormality diagnosis device and abnormality diagnosis method | |
| CN116643908B (en) | Automatic fault alarm method based on Feiteng multipath server | |
| CN113487086A (en) | Method and device for predicting remaining service life of equipment, computer equipment and medium | |
| CN116400249A (en) | Detection method and device for energy storage battery | |
| US11537501B2 (en) | Method and device for monitoring server based on recordings of data from sensors, and non-transitory storage medium | |
| CN113487182B (en) | Device health state evaluation method, device, computer device and medium | |
| CN112202170A (en) | Direct-current microgrid load fault diagnosis method and device and storage medium | |
| CN111693135A (en) | Power equipment anomaly detection method based on acoustic array edge calculation | |
| CN110532142A (en) | A kind of computer system hard disk switching controller | |
| WO2023135676A1 (en) | Estimation device, estimation method, and program | |
| CN117118808B (en) | Multi-source ammeter data acquisition and analysis method, system and storage medium based on Internet of things | |
| CN211044010U (en) | Remote diagnosis service system | |
| CN212518537U (en) | Localization tracking formula transformer substation monitor and monitored control system | |
| CN114706720B (en) | Method, system, equipment and storage medium for judging slow disk of distributed storage system | |
| WO2023079985A1 (en) | Sign detection device, sign detection system, and sign detection method | |
| CN117290146A (en) | Processing method and device for misjudgment of solid state disk faults | |
| CN113157529A (en) | Computer running state monitoring system, method, terminal and medium | |
| CN116364980A (en) | Fault diagnosis method, device, equipment and medium for fuel cell system | |
| CN113656228A (en) | Disk fault detection method and device, computer equipment and storage medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |