CN218070539U

CN218070539U - Reserve type semiconductor laser device

Info

Publication number: CN218070539U
Application number: CN202222390609.7U
Authority: CN
Inventors: 陈晓华; 王柳; 郎超; 杨海强; 张一翔; 于振坤
Original assignee: BWT Beijing Ltd
Current assignee: BWT Beijing Ltd
Priority date: 2022-09-08
Filing date: 2022-09-08
Publication date: 2022-12-16
Anticipated expiration: 2032-09-08

Abstract

The utility model provides a deposit formula semiconductor laser device, include: the heat sink comprises a tube shell, wherein the bottom inside the tube shell is provided with a step surface, and two heat sinks are arranged on the step surface; the first laser chip is arranged on a heat sink and used for emitting light beams along a first direction; the second laser chip is arranged on the other heat sink and used for emitting light beams along a second direction, wherein the height of the first laser chip is higher than that of the second laser chip by taking the bottom of the tube shell as a reference, and the first laser chip and the second laser chip are provided with independent power supply input ends; the reflecting unit is used for changing the light beam emitted by the second laser chip along the second direction into the light beam emitted along the first direction; and the focusing unit is used for coupling the light beam emitted by the first laser chip or the second laser chip to the output optical fiber. The utility model discloses a laser device's continuation work has solved laser device in case power decline or harm appear in the laser chip, needs the maintenance to cause the problem of delaying the use.

Description

Reserve type semiconductor laser device

Technical Field

The utility model relates to a laser instrument technical field especially relates to a deposit formula semiconductor laser device.

Background

Semiconductor lasers are increasingly used in laser pumping, laser processing, laser medical treatment, laser display, military applications and other fields. In recent decades, with the further maturity of single-tube semiconductor laser products, the output power can reach several watts or even dozens of watts through optical fiber coupling, and the requirements in the fields of medical treatment, industrial processing, laser ranging, military and the like are also greatly increased.

In the prior art, the pump source of the laser product is a single laser chip packaged in a laser device.

In the process of implementing the present invention, the inventor finds that there are at least the following problems in the prior art: in the long-term working process, the situation that a laser chip fails may occur in the laser device, and at the moment, the pumping source needs to be suspended, and the laser device needs to be returned to a factory for maintenance, so that the normal use of a laser product can be delayed.

SUMMERY OF THE UTILITY MODEL

The present invention aims at solving at least one of the technical problems in the related art to a certain extent.

Therefore, an object of the present invention is to provide a semiconductor laser device capable of prolonging the service life and shortening the time for maintaining the failed product.

To achieve the above object, the present invention provides a storage type semiconductor laser device, including:

the heat sink comprises a pipe shell, wherein the bottom inside the pipe shell is provided with a step surface, and two heat sinks are arranged on the step surface;

the first laser chip is arranged on one heat sink and used for emitting light beams along a first direction;

the second laser chip is arranged on the other heat sink and used for emitting light beams along a second direction, wherein the bottom of the tube shell is taken as a reference, the height of the first laser chip is higher than that of the second laser chip, and the first laser chip and the second laser chip are provided with independent power supply input ends respectively;

the reflecting unit is used for changing the light beam emitted by the second laser chip along the second direction into the light beam emitted along the first direction;

and the focusing unit is used for coupling the light beam emitted by the first laser chip or the second laser chip to an output optical fiber.

According to the utility model discloses a semiconductor laser device, two laser chip have been installed in the tube, semiconductor laser device is at the during operation, only a laser chip stimulated irradiation, reserve laser chip does not emit laser, when inefficacy such as chamber face burning point appears in operation laser chip long-term work or long-term work normal attenuation, need not dismantle whole semiconductor laser device maintenance, only need add power to reserve laser chip, the laser chip of replacement inefficacy or decay, the maintenance duration has been practiced thrift, guarantee whole semiconductor laser device's continuation work, the life of laser product has been improved.

According to an embodiment of the invention, the first direction and the second direction are perpendicular to each other.

According to the utility model discloses an embodiment, still include first to fourth electrode pin, the positive negative pole of first laser chip with first electrode pin with second electrode pin is connected, the positive negative pole of second laser chip with third electrode pin with fourth electrode pin is connected.

According to the utility model discloses an embodiment, the tube is the cuboid.

According to the utility model discloses an embodiment, first to fourth electrode pin runs through the setting and is in on the same side of tube.

According to the utility model discloses an embodiment, first, third and fourth electrode pin run through the setting and are in on the same side of tube, second electrode pin run through the setting and is in on another side of tube.

According to an embodiment of the invention, the reflecting unit is a mirror.

According to an embodiment of the present invention, the focusing unit is a focusing lens or a self-focusing lens.

According to the utility model discloses an embodiment, still include slow axis collimating lens, slow axis collimating lens is followed first direction sets up the reflecting element with between the focusing unit.

According to the utility model discloses an embodiment, still include and prevent the reverse side, prevent that the reverse side follows the first direction sets up the reflection unit with between the focusing unit.

Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.

Drawings

Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. Wherein:

fig. 1 is a schematic structural diagram of a storage type semiconductor laser device according to an embodiment of the present invention.

Fig. 2 is a schematic structural diagram of a storage type semiconductor laser device according to another embodiment of the present invention.

Description of reference numerals:

the optical fiber laser comprises a shell 1, a first laser chip 2, a second laser chip 3, a 4-reflector, a slow axis collimating lens 5, an anti-reflection sheet 6, a focusing lens 7, an output optical fiber 8, a mounting hole 9, a first electrode pin 10, a second electrode pin 11, a third electrode pin 12, a fourth electrode pin 13 and a self-focusing lens 14.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention. On the contrary, the embodiments of the invention include all changes, modifications and equivalents coming within the spirit and terms of the claims appended hereto.

With reference to fig. 1 and fig. 2, an embodiment of the present invention provides a storage type semiconductor laser device, including a tube 1, a first laser chip 2, a second laser chip 3, a reflection unit, a focusing unit, and an output fiber 8. Wherein:

the package is a housing that protects the internal optical components from reliable operation. The bottom of the inside of the tube shell 1 is provided with a step surface, and two heat sinks are arranged on the step surface. In one embodiment, the envelope 1 is a cuboid. The outer wall of the housing 1 has mounting holes 9 at opposite corners.

The first laser chip 2 is arranged on a heat sink for emitting a light beam in a first direction. The second laser chip 3 is arranged on the other heat sink and used for emitting light beams along a second direction, wherein the bottom of the tube shell 1 is taken as a reference, the height of the first laser chip 2 is higher than that of the second laser chip 3, and the first laser chip 2 and the second laser chip 3 are provided with independent power input ends respectively. It is understood that the first laser chip 2 and the second laser chip 3 are subjected to coupling adjustment during manufacturing, and only 1 of them is finally used in the product application. The double laser chips are coupled, the single laser chip is output, and the laser chip is reserved, so that the reliability of the laser device is improved. In one embodiment, in fig. 1 and 2, the first direction and the second direction are perpendicular to each other, the first direction is a left-right direction, and the second direction is an up-down direction.

The reflection unit is located in the package 1 and is used for changing the light beam emitted from the second laser chip 3 along the second direction into the light beam emitted along the first direction. In one embodiment, the reflecting unit is a mirror 4. The mirror 4 is located below the beam emitted from the first laser chip 2 in height. The number of the reflecting mirrors 4 is only 1, and compared with the scheme of a plurality of reflecting mirrors, the manufacturing cost can be saved, and the occupied space can be reduced.

The focusing unit is located in the package 1 and is used for coupling the light beam emitted by the first laser chip 2 or the second laser chip 3 to the output optical fiber 8. The size of the focusing unit should be such that the beam emitted by the reflecting unit and the beam emitted by the first laser chip 2 can pass through simultaneously.

According to the utility model discloses semiconductor laser device, two laser chip have been installed in the tube, semiconductor laser device is at the during operation, only a laser chip stimulated irradiation, reserve laser chip does not emit laser, when inefficacy such as chamber surface burning point appears in operation laser chip long-term operation or long-term operation normal attenuation, need not dismantle whole semiconductor laser device and return the factory and maintain, only need add power to reserve laser chip, the laser chip of replacement inefficacy or attenuation, the maintenance duration has been practiced thrift, guarantee whole semiconductor laser device's continuation work, the life of laser product has been improved.

In some embodiments, the storage type semiconductor laser device further includes first to fourth electrode pins (10, 11, 12, 13), wherein the positive and negative electrodes of the first laser chip 2 are connected to the first electrode pin 10 and the second electrode pin 11, and the positive and negative electrodes of the second laser chip 3 are connected to the third electrode pin 12 and the fourth electrode pin 13. The laser chip and the electrode pin are connected through a multi-strand lead. The position of the electrode pins can be designed according to the actual requirements. In one example, referring to fig. 2, the first, third and fourth electrode pins (10, 12, 13) are penetratingly disposed on the same side of the package 1, and the second electrode pin 11 is penetratingly disposed on the other side of the package 1. In another example, referring to fig. 2, the first to fourth electrode pins (10, 11, 12, 13) are penetratingly disposed on the same side of the package 1. When the first laser chip 2 is selected to operate, the terminals of the first electrode pin 10 and the second electrode pin 11 outside the package 1 are connected to a power line, and optionally, the power line and the electrode pins are connected in a plugging manner. When the first laser chip 2 fails, the power line is taken down from the first electrode pin 10 and the second electrode pin 11, and then the terminals of the third electrode pin 12 and the fourth electrode pin 13 outside the tube shell 1 are accessed, so that the second laser chip 3 works. And vice versa.

In some embodiments, the reserve semiconductor laser device includes first to third electrode pins (10, 11, 12). In one example, the anodes of the first laser chip 2 and the second laser chip 3 share one of the electrode pins, and the cathodes of the first laser chip 2 and the second laser chip 3 are each connected to a separate one of the electrode pins. In one example, the cathodes of the first laser chip 2 and the second laser chip 3 share one of the electrode pins, and the anodes of the first laser chip 2 and the second laser chip 3 are each connected to a separate one of the electrode pins. That is, one electrode of the two laser chips is shared, so that only the connection of the other electrode needs to be changed during replacement, and the space and the cost are saved.

In some embodiments, the focusing unit is a focusing mirror 7 or a self-focusing lens 14. The ordinary focusing mirror 7 focuses light into a point by controlling the curvature of the lens surface and utilizing the generated optical path difference. The material of the self-focusing lens 14 can refract the axially propagating light and gradually reduce the refractive index distribution along the radial direction, so that the emergent light rays are smoothly and continuously converged to one point.

In some embodiments, referring to fig. 2, the storage type semiconductor laser device further includes a slow axis collimating lens 5, and the slow axis collimating lens 5 is disposed between the reflecting unit and the focusing unit along the first direction, and can collimate the beam emitted from any one of the laser chips in the slow axis direction.

In some embodiments, the reserve type semiconductor laser device further includes an anti-reflection sheet 6, the anti-reflection sheet 6 being disposed between the reflection unit and the focusing unit in the first direction. The anti-reflection sheet 6 can effectively prevent return light from entering the laser chip.

Two examples are given below to explain the contents involved in the above examples.

Example one

As shown in fig. 1, two laser chips (2,3) are installed in the package 1, only one laser chip performs stimulated emission during operation, and when failure such as cavity surface burning point occurs during long-term operation or normal attenuation occurs during long-term operation, the spare chip is replaced to perform stimulated emission. The side walls of the package 1 are provided with 4 electrode pins (10, 11, 12, 13). The positions of the electrode pins are set as required. The reflector 4 and the anti-reflection sheet 6 inside the tube shell are fixed with the tube shell in an adhesive mode. The self-focusing lens 14 and the output optical fiber 8 are fixedly connected by a metal sleeve. The metal sleeve is fixed with the tube shell in a bonding mode. When the self-focusing lens 14 is coated with the antireflection film, the reflection preventing plate 6 can be omitted, further reducing the occupied space. If the first laser chip 2 works, the light beam emitted by the first laser chip 2 is coupled into the output optical fiber 8 through the anti-reflection sheet 6 and the self-focusing lens 14 in sequence along the first direction. If the second laser chip 3 works, the light beam emitted by the second laser chip 3 along the second direction is reflected by the reflector 4, and the light beam emitted by the reflector along the first direction is coupled into the output optical fiber 8 through the anti-reflection sheet 6 and the self-focusing lens 14 in sequence.

Example two

As shown in fig. 2, the embodiment shown in fig. 2 is different from the embodiment shown in fig. 1 in that 1, the arrangement positions of the electrode pins are different; 2. the embodiment shown in fig. 2 uses a focusing mirror 7 instead of the self-focusing lens 14 in the embodiment shown in fig. 1; 3. a slow axis collimating lens 5 is also provided in the embodiment shown in fig. 2. If the first laser chip 2 works, the light beam emitted by the first laser chip 2 is coupled into the output optical fiber 8 through the slow-axis collimating lens 5, the anti-reflection sheet 6 and the focusing mirror 7 in sequence along the first direction. If the second laser chip 3 works, the light beam emitted by the second laser chip 3 along the second direction is reflected by the reflector 4, and the light beam emitted by the reflector in the first direction is coupled into the output optical fiber 8 through the slow axis collimating lens 5, the anti-reflection sheet 6 and the focusing mirror 7 in sequence.

It should be noted that, in the description of the present invention, the terms "first", "second", etc. are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In addition, in the description of the present invention, "a plurality" means two or more unless otherwise specified.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; may be mechanically coupled, may be electrically coupled or may be in communication with each other; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

In the present application, unless expressly stated or limited otherwise, the first feature may be directly on or directly under the second feature or indirectly via intermediate members. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

Any process or method descriptions in flow charts or otherwise described herein may be understood as representing modules, segments, or portions of code which include one or more executable instructions for implementing specific logical functions or steps of the process, and the scope of the preferred embodiments of the present invention includes other implementations in which functions may be executed out of order from that shown or discussed, including substantially concurrently or in reverse order, depending on the functionality involved, as would be understood by those reasonably skilled in the art of the embodiments of the present invention.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

Although embodiments of the present invention have been shown and described, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art without departing from the scope of the present invention.

Claims

1. A storage type semiconductor laser device, comprising:

the heat sink comprises a tube shell (1), wherein the bottom inside the tube shell (1) is provided with a step surface, and two heat sinks are arranged on the step surface;

the first laser chip (2) is arranged on one heat sink and used for emitting light beams along a first direction;

the second laser chip (3) is arranged on the other heat sink and used for emitting light beams along a second direction, wherein the bottom of the tube shell (1) is taken as a reference, the height of the first laser chip (2) is higher than that of the second laser chip (3), and the first laser chip (2) and the second laser chip (3) are provided with independent power supply input ends;

the reflecting unit is used for changing the light beam emitted by the second laser chip (3) along the second direction into the light beam emitted along the first direction;

and the focusing unit is used for coupling the light beam emitted by the first laser chip (2) or the second laser chip (3) to an output optical fiber (8).

2. A storage semiconductor laser device as claimed in claim 1, wherein the first direction and the second direction are perpendicular to each other.

3. The storage type semiconductor laser device according to claim 1, further comprising first to fourth electrode pins (10, 11, 12, 13), wherein the positive and negative electrodes of the first laser chip (2) are connected to the first electrode pin (10) and the second electrode pin (11), and the positive and negative electrodes of the second laser chip (3) are connected to the third electrode pin (12) and the fourth electrode pin (13).

4. A reserve type semiconductor laser device according to claim 3, characterized in that said package (1) is a rectangular parallelepiped.

5. A storage semiconductor laser device as claimed in claim 4, characterized in that the first to fourth electrode leads (10, 11, 12, 13) are arranged all through on the same side of the package (1).

6. A reservoir semiconductor laser device as claimed in claim 4, characterized in that the first, third and fourth electrode pins (10, 12, 13) are arranged through one and the same side of the package (1), and the second electrode pin (11) is arranged through the other side of the package (1).

7. A storage semiconductor laser device according to claim 1, characterized in that the reflecting unit is a mirror (4).

8. A storage semiconductor laser device according to claim 1, characterized in that the focusing unit is a focusing mirror (7) or a self-focusing lens (14).

9. A storage semiconductor laser device according to claim 1, further comprising a slow-axis collimating lens (5), the slow-axis collimating lens (5) being arranged between the reflecting unit and the focusing unit in the first direction.

10. A storage type semiconductor laser device according to any one of claims 1 to 9, further comprising an anti-reflection sheet (6), the anti-reflection sheet (6) being provided between the reflection unit and the focusing unit in the first direction.