CN217981337U - Flat oxygen sensor chip - Google Patents

Abstract

The utility model belongs to the technical field of the oxygen sensor technique and specifically relates to a flat oxygen sensor chip, porous protective layer are connected to on the aluminium oxide insulating layer, and can the stet battery layer set up in the aluminium oxide insulating layer, and air passage layer fixed connection is to the bottom on ability stet battery layer, and the zirconia transition layer sets up in the bottom on air passage layer, and the heater layer sets up in the aluminium oxide insulating layer, and the heater level is in the below on zirconia transition layer. The utility model discloses an alumina insulation layer cladding is at the chip surface, can avoid the problem that the zirconia chip turned black on surface when the heating, and the alumina insulation layer utilizes the good insulating nature of alumina to realize the excellent insulating effect of chip as heating circuit and battery circuit's insulating layer, need not extra technology, and the zirconia transition layer makes the bending strength of chip high simultaneously, can effectively reduce the fracture that later stage packaging in-process shear stress leads to.

Description

Flat oxygen sensor chip

Technical Field

The utility model relates to an oxygen sensor technical field especially relates to a flat oxygen sensor chip.

Background

With the increasing strictness of environmental protection policies and emission standards of automobiles, oxygen sensors have been widely used in engine combustion systems and exhaust gas catalytic systems. Compared with the traditional tubular zirconia oxygen sensor sensitive unit, the chip type oxygen sensor chip has the advantages of high heating efficiency, high response speed, good machining performance and the like, and occupies most market share in the field of oxygen sensor chips.

The substrate material of the current mainstream oxygen sensor chip is zirconia or alumina, and the advantage of adopting a single substrate material is that the same material has no shrinkage difference, and a blank can be fired on the flat plate type bearing plate without bending deformation. However, the device made of a single substrate material also has certain defects, such as poor insulation of the zirconia substrate, and the insulation method comprises the following steps: alumina slurry is filled at the periphery of the electrode via hole to cover the platinum slurry at the inner side, the method has high requirements on process and equipment precision, and the insulation resistance generally does not exceed 100 omega; the alumina matrix is used as a main material, and only the zirconia is used in the induction battery layer, so that although a good insulation effect can be achieved, the firing temperature of the alumina ceramic is high, the alumina ceramic needs to be fired at about 1600 ℃, the energy consumption can be greatly increased, and the cost of the alumina powder is much higher than that of the zirconia. If the sintering temperature of alumina is lowered by adding more flux materials, the flexural strength of the device is relatively low, and the device is easily broken by the action of shear force in the later packaging process.

SUMMERY OF THE UTILITY MODEL

The utility model aims at solving the problem that the prior art needs to adopt extra processing, thereby easily receiving the defect of fracture caused by the shearing force, and providing a flat plate type oxygen sensor chip.

In order to achieve the above purpose, the utility model adopts the following technical scheme:

a flat plate type oxygen sensor chip is designed, which comprises a porous protection layer, an alumina insulation layer, a Nernst battery layer, an air channel layer, a zirconia transition layer and a heater layer, wherein:

the porous protection layer is connected to the alumina insulation layer, the Nernst battery layer is arranged in the alumina insulation layer, the air channel layer is fixedly connected to the bottom end of the Nernst battery layer, the zirconia transition layer is arranged at the bottom end of the air channel layer, the heater layer is arranged in the alumina insulation layer, and the heater layer is positioned below the zirconia transition layer.

Preferably, the aluminium oxide insulating layer includes ability stet battery pin, first conducting hole, rectangle hole, first aluminium oxide insulating layer, second aluminium oxide insulating layer and third aluminium oxide insulating layer, ability stet battery pin is connected to on the first aluminium oxide insulating layer, ability stet battery pin is connected ability stet battery layer, first conducting hole open set up extremely on the first aluminium oxide insulating layer, first conducting hole with ability stet battery layer cooperatees, the rectangle hole open set up extremely on the first aluminium oxide insulating layer, the rectangle hole with porous protective layer ability stet battery layer cooperatees, the upper surface of second aluminium oxide insulating layer is connected the zirconia transition layer, the lower surface of second aluminium oxide insulating layer is connected the heater layer, third aluminium oxide insulating layer fixed connection the heater layer, the heater level be located the second aluminium oxide insulating layer with between the third aluminium oxide insulating layer.

Preferably, the nernst cell layer includes outer electrode tip of nernst cell response, the zirconia functional layer of nernst cell, second conducting hole and the interior electrode tip of nernst cell response, the outer electrode tip fixed connection of nernst cell response is to the upper surface of the zirconia functional layer of nernst cell, the outer electrode tip fixed connection of nernst cell response is to the lower surface of the zirconia functional layer of nernst cell, the second conducting hole set up to on the zirconia functional layer of nernst cell, the outer electrode tip of nernst cell response with first conducting hole, rectangular hole cooperatees, the outer electrode tip of nernst cell response is connected nernst cell lead foot, the zirconia functional layer of nernst cell connects the air channel layer.

Preferably, the air channel layer comprises a cavity layer, a supporting layer and a cavity layer air chamber, the cavity layer air chamber is formed in the cavity layer, the supporting layer is arranged in the cavity layer air chamber, the cavity layer is connected with a zirconia functional layer of the nernst cell, and the cavity layer is connected with the zirconia transition layer.

Preferably, the heater layer includes a heating circuit layer and a heater terminal pin, the heating circuit layer is disposed between the second aluminum oxide insulating layer and the third aluminum oxide insulating layer, the heater terminal pin is connected to the third aluminum oxide insulating layer, and the heater terminal pin is connected to the heating circuit layer.

The utility model provides a pair of flat oxygen sensor chip, beneficial effect lies in:

through the cladding of aluminium oxide insulating layer at the chip surface, can avoid the problem that the zirconia chip surperficial blackened when heating, the insulating layer of aluminium oxide insulating layer as heating circuit and battery circuit utilizes the good insulating nature of aluminium oxide to realize the excellent insulating effect of chip, need not extra technology, and the zirconia transition layer makes the bending strength of chip high simultaneously, can effectively reduce the fracture that later stage packaging in-process shear stress leads to.

Drawings

Fig. 1 is a schematic diagram of an expanded structure of a flat plate type oxygen sensor chip according to the present invention.

In the figure: the structure comprises a porous protection layer 1, a Nernst cell terminal pin 2, a first via hole 3, a rectangular hole 4, a first aluminum oxide insulation layer 5, a Nernst cell induction outer electrode tip 6, a Nernst cell zirconium oxide functional layer 7, a second via hole 8, a Nernst cell induction inner electrode tip 9, a cavity layer 10, a supporting layer 11, a cavity layer air chamber 12, a zirconium oxide transition layer 13, a second aluminum oxide insulation layer 14, a heating circuit layer 15, a third aluminum oxide insulation layer 16 and a heater terminal pin 17.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.

Example 1

Referring to fig. 1, a flat plate type oxygen sensor chip includes a porous protection layer 1, an alumina insulation layer, a nernst cell layer, an air channel layer, a zirconia transition layer 13, and a heater layer, wherein:

porous protective layer 1 is connected to on the aluminium oxide insulating layer, the nernst battery layer sets up in the aluminium oxide insulating layer, the aluminium oxide insulating layer is as the insulating layer of heating circuit and battery circuit, utilize the good insulating nature of aluminium oxide to realize the excellent insulating effect of chip, need not extra technology, the operation is simple, the effect is showing, the cladding of aluminium oxide insulating layer is at the chip surface, the problem that the zirconia chip surface blackened when heating can be avoided, air channel layer fixed connection is to the bottom of nernst battery layer, zirconia transition layer 13 sets up the bottom at air channel layer, zirconia transition layer 13 comprises 8-10 layers of zirconia diaphragm, can adjust the quantity of diaphragm in the transition layer according to device thickness and resistance requirement, zirconia transition layer 13 makes the bending strength of chip high, can effectively reduce the fracture defective rate that shear stress leads to in the later stage packaging process, the heater layer sets up in the aluminium oxide insulating layer, the heater level is in the below zirconia transition layer 13.

The working process is as follows: porous protective layer 1, the alumina insulation layer, the nernst battery layer, the air channel layer, zirconia transition layer 13 and heater layer set gradually from last to down, the cladding of alumina insulation layer is at the chip surface, can avoid the problem that the zirconia chip surface blackened when the heating, the alumina insulation layer is as the insulating layer of heating circuit and battery circuit, utilize the good insulating nature of alumina to realize the excellent insulating effect of chip, need not extra technology, moreover, the operation is simple, the effect is showing, zirconia transition layer 13 makes the bending strength of chip high simultaneously, can effectively reduce the fracture defective rate that shear stress leads to in the later stage packaging process.

The utility model also provides a preparation method of flat oxygen sensor chip, including following step:

s1: sequentially overlapping the diaphragms of all functional layers on the positioning plate according to the requirements of the laminated structure and the thickness of the chip;

s2: putting the stacked green bodies into a plastic sealing bag, vacuumizing the bag and sealing;

s3: putting the sealing bag filled with the green body into a warm isostatic pressing device for pressing and forming, wherein the pressing process comprises the following steps:

(1) Preserving the heat at 80 ℃ for 900s;

(2) Maintaining the pressure at 10MPa for 1min;

(3) Maintaining the pressure at 15MPa for 2min;

(4) Maintaining the pressure at 21Mpa for 4min;

s4: cutting the press-formed green body into individual devices with a length and width dimension of 67 x 5mm according to cutting lines printed on the surface of the green body by using a RQJ-200 type hot cutting machine;

s5: putting the device into a special sagger, and sequentially putting the device into a glue discharging furnace for discharging glue to remove most organic matters in a green body of the device;

s6: after the binder removal, the device together with the saggar is transferred to a firing furnace for solid phase sintering.

Example 2

Referring to fig. 1, as another preferred embodiment of the present invention, the difference with embodiment 1 lies in that the alumina insulation layer includes nernst cell pin 2, first via hole 3, rectangular hole 4, first alumina insulation layer 5, second alumina insulation layer 14 and third alumina insulation layer 16, nernst cell pin 2 is connected to first alumina insulation layer 5, nernst cell pin 2 is used for connecting to nernst cell layer, nernst cell pin 2 is connected to nernst cell layer, first via hole 3 is opened and is set up to first alumina insulation layer 5, first via hole 3 cooperates with nernst cell layer, rectangular hole 4 is opened and is set up to first alumina insulation layer 5, rectangular hole 4 cooperates with porous protection layer 1, nernst cell layer, porous protection layer 1 main component is magnesium aluminate spinel, alumina powder, glaze powder, printing is on rectangular hole insulation layer 4 with the rectangle hole of first alumina hole in the way of adopting screen printing, cladding is from the nernst cell insulation layer 4, the nernst cell insulation layer leaks its structure, can be filtered out in the micropore diameter of the micropore insulation layer, the solid alumina powder, the exhaust gas is connected with the solid alumina layer, the exhaust gas induction heater, exhaust gas is connected to the alumina layer 14, the solid lead adsorption layer, the exhaust gas adsorption layer is connected to the exhaust gas adsorption layer, the exhaust gas adsorption layer 16, the exhaust gas adsorption device.

Example 3

Referring to fig. 1, as another preferred embodiment of the present invention, the difference from embodiment 1 lies in that the nernst cell layer includes a nernst cell induction outer electrode tip 6, a zirconia functional layer 7 of the nernst cell, a second via hole 8 and a nernst cell induction inner electrode tip 9, the nernst cell induction outer electrode tip 6 is fixedly connected to the upper surface of the zirconia functional layer 7 of the nernst cell, the size of the nernst cell induction outer electrode tip 6 is 5 × 3mm, the position coincides with the rectangular hole 4, the lower end of the lead wire coincides with the one-side circular hole of the first alumina insulation layer, the nernst cell induction inner electrode tip 9 is fixedly connected to the lower surface of the zirconia functional layer 7 of the nernst cell, the size of the nernst cell induction inner electrode tip 9 is 5 × 2mm, the second via hole 8 is opened to the zirconia functional layer 7 of the nernst cell, the second via hole 8 is convenient for the lower surface of the nernst cell induction outer electrode tip 6 and the nernst cell induction inner electrode tip 9, the nernst cell induction inner electrode tip 6 is connected to the first channel inner electrode tip 3, the nernst cell induction inner electrode tip 7 is connected to the nernst cell, the nernst cell induction inner electrode tip 6, the nernst cell induction inner electrode tip 2 is connected to the nernst cell, the nernst cell induction inner electrode tip 7, the nernst cell induction inner electrode tip is connected to the nernst cell.

Example 4

Referring to fig. 1, as another preferred embodiment of the present invention, the difference from embodiment 1 is that the air channel layer includes a cavity layer 10, a supporting layer 11 and a cavity layer air chamber 12, the cavity layer 10 is provided with the cavity layer air chamber 12, the supporting layer 11 is disposed in the cavity layer air chamber 12, the supporting layer 11 is a carbon layer, the printed plastic carbon paste is cured quickly, when the cavity layer is subjected to isostatic pressing, a good supporting effect can be provided, and collapse of the cavity portion of the green body due to stress in all directions can be avoided; the carbon layer is used as a supporting layer, can be completely oxidized in the high-temperature sintering process of the blank, generates CO2 gas and is discharged from an air channel, the channel blockage caused by the formation of a large amount of residues in the channel can not be caused, the cavity layer 10 is connected with the zirconia functional layer 7 of the Nernst cell, the cavity layer 10 is connected with the zirconia transition layer 13,

example 5

Referring to fig. 1, as another preferred embodiment of the present invention, the difference from embodiment 1 is that the heater layer includes a heating circuit layer 15 and heater pins 17, the heating circuit layer 15 is disposed between the second aluminum oxide insulating layer 14 and the third aluminum oxide insulating layer 16, the heating circuit layer 15 is printed on the back surface of the second aluminum oxide insulating layer 14 by screen printing, the heater pins 17 are connected to the third aluminum oxide insulating layer 16, the heater pins 17 are used for connecting an external electrical mechanism to the heating circuit layer 15, and the heater pins 17 are connected to the heating circuit layer 15.

The above, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, the concept of which is equivalent to replace or change, should be covered within the protection scope of the present invention.

Claims (5)

1. A flat plate type oxygen sensor chip is characterized by comprising a porous protection layer (1), an alumina insulation layer, a Nernst battery layer, an air channel layer, a zirconia transition layer (13) and a heater layer, wherein:

the porous protection layer (1) is connected to the alumina insulation layer, the Nernst battery layer is arranged in the alumina insulation layer, the air channel layer is fixedly connected to the bottom end of the Nernst battery layer, the zirconia transition layer (13) is arranged at the bottom end of the air channel layer, the heater layer is arranged in the alumina insulation layer, and the heater layer is positioned below the zirconia transition layer (13).

2. The flat plate type oxygen sensor chip according to claim 1, wherein the aluminum oxide insulating layer comprises a Nernst cell pin (2), a first via hole (3), a rectangular hole (4), a first aluminum oxide insulating layer (5), a second aluminum oxide insulating layer (14) and a third aluminum oxide insulating layer (16), the Nernst cell pin (2) is connected to the first aluminum oxide insulating layer (5), the Nernst cell pin (2) is connected to the Nernst cell layer, the first via hole (3) is arranged on the first aluminum oxide insulating layer (5), the first via hole (3) is matched with the Nernst cell layer, the rectangular hole insulating layer (4) is arranged on the first aluminum oxide insulating layer (5), the rectangular hole (4) is matched with the porous protection layer (1) and the Nernst cell layer, the upper surface of the second aluminum oxide insulating layer (14) is connected to the zirconium oxide transition layer (13), the lower surface of the second aluminum oxide insulating layer (14) is connected to the heater insulating layer (16), and the second aluminum oxide insulating layer (16) is fixed between the aluminum oxide insulating layer and the heater (16).

3. The flat plate type oxygen sensor chip according to claim 2, wherein the Nernst cell layer comprises a Nernst cell sensing outer electrode tip (6), a Nernst cell zirconia functional layer (7), a second via hole (8) and a Nernst cell sensing inner electrode tip (9), the Nernst cell sensing outer electrode tip (6) is fixedly connected to the upper surface of the Nernst cell zirconia functional layer (7), the Nernst cell sensing inner electrode tip (9) is fixedly connected to the lower surface of the Nernst cell zirconia functional layer (7), the second via hole (8) is opened to the Nernst cell zirconia functional layer (7), the Nernst cell sensing outer electrode tip (6) is matched with the first via hole (3) and the rectangular hole (4), the Nernst cell sensing outer electrode tip (6) is connected to the Nernst cell terminal pin (2), and the Nernst cell zirconia functional layer (7) is connected to the air channel layer.

4. The flat plate type oxygen sensor chip according to claim 3, wherein the air channel layer comprises a cavity layer (10), a support layer (11) and a cavity layer air chamber (12), the cavity layer (10) is provided with the cavity layer air chamber (12), the support layer (11) is arranged in the cavity layer air chamber (12), the cavity layer (10) is connected with the zirconia functional layer (7) of the Nernst cell, and the cavity layer (10) is connected with the zirconia transition layer (13).

5. A flat plate type oxygen sensor chip according to claim 2 wherein the heater layer comprises a heating circuit layer (15) and a heater pin (17), the heating circuit layer (15) is disposed between the second aluminum oxide insulating layer (14) and the third aluminum oxide insulating layer (16), the heater pin (17) is connected to the third aluminum oxide insulating layer (16), and the heater pin (17) is connected to the heating circuit layer (15).

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