CN217973492U - Single crystal furnace capable of increasing argon flow rate and saving argon - Google Patents
Single crystal furnace capable of increasing argon flow rate and saving argon Download PDFInfo
- Publication number
- CN217973492U CN217973492U CN202222241776.5U CN202222241776U CN217973492U CN 217973492 U CN217973492 U CN 217973492U CN 202222241776 U CN202222241776 U CN 202222241776U CN 217973492 U CN217973492 U CN 217973492U
- Authority
- CN
- China
- Prior art keywords
- heat
- heat preservation
- argon
- argon gas
- hollow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The utility model discloses a can increase argon gas flow velocity and practice thrift single crystal growing furnace of argon gas, include: a furnace body including a main chamber; the auxiliary chamber is positioned on one side of the furnace body and communicated with the main chamber; the heat preservation cylinder is arranged in the main chamber and comprises a first heat preservation cover, a first heat preservation cylinder and a heat preservation felt which are sequentially arranged, the first heat preservation cover is positioned on one side, close to the auxiliary chamber, of the heat preservation felt, and the first heat preservation cover is provided with a through hole; the area of the first heat preservation cover in the orthographic projection of the heat preservation felt is M, the area of the through hole in the orthographic projection of the heat preservation felt is K, the sectional area of the main chamber in the position flush with the first heat preservation cover is N, and the ratio of (M + K)/N is more than or equal to 90% and less than or equal to 100%. Through reducing the interval between first heat preservation lid and the furnace body, can make inside most argon gas flows into a heat preservation section of thick bamboo through the through-hole of first heat preservation lid to make the inside argon gas flow grow of entering heat preservation section of thick bamboo, help protecting silicon solution and monocrystalline silicon not by the oxidation, can also reduce the argon gas quantity, with reduce cost.
Description
Technical Field
The utility model relates to a monocrystalline silicon makes technical field, more specifically relates to a can increase argon gas flow rate and practice thrift single crystal growing furnace of argon gas.
Background
With the gradual decrease of fossil energy and the more serious environmental problems caused by the combustion of fossil energy, solar energy has become a hot point of research as a renewable green energy source. Photovoltaic modules capable of converting solar energy into electric energy, and monocrystalline silicon, which is a basic material of photovoltaic modules, are also being continuously developed in their manufacturing techniques.
Common methods for manufacturing single crystal silicon, which require the growth of high purity virgin polysilicon into single crystal silicon, include the czochralski method, which requires operation by means of a single crystal furnace, and has the principle of: a method for pulling crystal from silicon melt by seed crystal includes such steps as introducing argon gas to single crystal furnace to prevent silicon melt from being oxidized, protecting surface of crystal bar and taking heat away from furnace, and features that the argon gas is divided when it enters furnace body and is diffused between insulating cylinder and furnace body to decrease the quantity of argon gas flowing in insulating cylinder.
Therefore, a single crystal furnace capable of increasing the flow rate of argon gas and saving argon gas is provided to reduce the manufacturing cost of single crystal silicon.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model provides a can increase argon gas flow rate and practice thrift single crystal growing furnace of argon gas, include:
a furnace body including a main chamber;
the auxiliary chamber is positioned on one side of the furnace body and communicated with the main chamber;
the heat preservation cylinder is arranged in the main chamber and comprises a first heat preservation cover, a first heat preservation cylinder and a heat preservation felt which are sequentially arranged, the first heat preservation cover is positioned on one side, close to the auxiliary chamber, of the heat preservation felt, the first heat preservation cover is provided with a through hole, and the outer diameter of the first heat preservation cover is larger than that of the first heat preservation cylinder and smaller than or equal to the inner diameter of the furnace body;
the area of the orthographic projection of the first heat-preservation cover on the plane of the heat-preservation felt is M, the area of the orthographic projection of the through hole on the plane of the heat-preservation felt is K, the sectional area of the position, which is parallel and level to the first heat-preservation cover, of the main chamber is N, and the ratio of (M + K)/N is more than or equal to 90% and less than or equal to 100%.
Compared with the prior art, the utility model provides a can increase argon gas flow rate and practice thrift the single crystal growing furnace of argon gas has realized following beneficial effect at least:
the utility model provides a single crystal growing furnace body which can increase the flow rate of argon and save argon, comprising a main chamber, a secondary chamber positioned at one side of the furnace body, the secondary chamber communicated with the main chamber, and the argon flowing from the secondary chamber to the main chamber; the heat preservation cylinder is arranged in the main chamber and comprises a first heat preservation cover, a first heat preservation cylinder and a heat preservation felt which are sequentially arranged, the first heat preservation cover is positioned on one side, close to the auxiliary chamber, of the heat preservation felt, the first heat preservation cover is provided with a through hole, and the outer diameter of the first heat preservation cover is larger than that of the first heat preservation cylinder and smaller than or equal to the inner diameter of the furnace body; the area of the first heat-preservation cover in the orthographic projection of the plane of the heat-preservation felt is M, the area of the through hole in the orthographic projection of the heat-preservation felt in the plane of the heat-preservation felt is K, the sectional area of the position, which is parallel to the first heat-preservation cover, of the main chamber is N, the ratio of (M + K)/N is more than or equal to 100% and is more than or equal to 90%, when argon flows into the main chamber from the auxiliary chamber, one part of argon flows into the inside of the heat-preservation cylinder through the through hole of the first heat-preservation cover, the other part of argon is diffused in the main chamber through the gap between the first heat-preservation cover and the furnace body, the interval between the first heat-preservation cover and the furnace body is reduced, the argon amount passing through the gap between the first heat-preservation cover and the furnace body can be reduced, and most of argon flows into the inside of the heat-preservation cylinder through the through hole of the first heat-preservation cover, so that the argon gas flow entering the inside of the heat-preservation cylinder is increased, the silicon solution and the protection from being oxidized can be further realized, the main chamber can also be reduced, and the cost is reduced.
Of course, it is not necessary for any product of the present invention to achieve all of the above-described technical effects simultaneously.
Other features of the present invention and advantages thereof will become apparent from the following detailed description of exemplary embodiments of the invention, which proceeds with reference to the accompanying drawings.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of the specification, illustrate embodiments of the invention and together with the description, serve to explain the principles of the invention.
FIG. 1 is a schematic view of a single crystal furnace according to the present invention for increasing the flow rate of argon gas and saving argon gas;
FIG. 2 isbase:Sub>A cross-sectional view taken along line A-A' of FIG. 1;
FIG. 3 is another cross-sectional view taken along line A-A' of FIG. 1;
FIG. 4 is a cross-sectional view taken along line B-B' of FIG. 1;
FIG. 5 isbase:Sub>A further sectional view taken along line A-A' of FIG. 1;
FIG. 6 is a cross-sectional view taken along line C-C' of FIG. 1;
FIG. 7 is a schematic view of another embodiment of a single crystal furnace according to the present invention for increasing the flow rate of argon gas and saving argon gas;
FIG. 8 is a cross-sectional view taken along line D-D' of FIG. 7;
1-furnace body, 2-main chamber, 3-auxiliary chamber, 4-heat preservation cylinder, 5-first heat preservation cover, 6-first heat preservation cylinder, 7-heat preservation felt, 8-through hole, 9-containing cavity, 10-crucible, 11-crucible side, 12-support rod, 13-heater, 14-side heater, 15-bottom heater, 16-exhaust duct, 17-second heat preservation cylinder, 18-first hollowed-out area, 19-second hollowed-out area, 20-heat resistance module, 21-heat shield, 22-heat shield water pipe, 23-connecting shaft, 231-first shaft, 232-second shaft, 24-third hollowed-out area, 25-feeding equipment, 26-feeding channel, X-first direction and Y-second direction.
Detailed Description
Various exemplary embodiments of the present invention will now be described in detail with reference to the accompanying drawings. It should be noted that: unless specifically stated otherwise, the relative arrangement of the components and steps, the numerical expressions, and numerical values set forth in these embodiments do not limit the scope of the present invention.
The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses.
Techniques, methods, and apparatus known to those of ordinary skill in the relevant art may not be discussed in detail but are intended to be part of the specification where appropriate.
In all examples shown and discussed herein, any particular value should be construed as merely illustrative, and not limiting. Thus, other examples of the exemplary embodiments may have different values.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, further discussion thereof is not required in subsequent figures.
Referring to fig. 1, 2, 3 and 4, fig. 1 isbase:Sub>A schematic structural view ofbase:Sub>A single crystal furnace capable of increasing an argon flow rate and saving argon according to the present invention, fig. 2 isbase:Sub>A sectional view taken alongbase:Sub>A directionbase:Sub>A-base:Sub>A ' in fig. 1, fig. 3 is another sectional view taken alongbase:Sub>A directionbase:Sub>A-base:Sub>A ' in fig. 1, and fig. 4 isbase:Sub>A sectional view taken alongbase:Sub>A direction B-B ' in fig. 1, to illustratebase:Sub>A specific embodiment of the single crystal furnace capable of increasing an argon flow rate and saving argon according to the present invention, which includes:
a furnace body 1 including a main chamber 2;
the auxiliary chamber 3 is positioned on one side of the furnace body 1, and the auxiliary chamber 3 is communicated with the main chamber 2;
the heat preservation cylinder 4 is arranged in the main chamber 2 and comprises a first heat preservation cover 5, a first heat preservation cylinder 6 and a heat preservation felt 7 which are sequentially arranged, the first heat preservation cover 5 is positioned on one side, close to the auxiliary chamber 3, of the heat preservation felt 7, the first heat preservation cover 5 is provided with a through hole 8, and the outer diameter of the first heat preservation cover 5 is larger than that of the first heat preservation cylinder 6 and is smaller than or equal to the inner diameter of the furnace body 1;
the orthographic projection area of the first heat-preservation cover 5 on the plane of the heat-preservation felt 7 is M, the orthographic projection area of the through hole 8 on the plane of the heat-preservation felt 7 is K, the sectional area of the position, which is flush with the first heat-preservation cover 5, of the main chamber 2 is N, and the ratio of (M + K)/N is more than or equal to 90% and less than or equal to 100%.
It should be noted that, referring to fig. 2 and fig. 3, the holding cavity 9 is enclosed by the heat-insulating cylinder 4, a crucible 10 is arranged in the holding cavity 9, the crucible 10 is used for holding silicon material, an opening of the crucible 10 faces the first heat-insulating cover 5, a crucible edge 11 is sleeved outside the crucible 10, a support rod 12 is connected to the bottom of the crucible edge 11, and the support rod 12 penetrates through the furnace body 1 and the heat-insulating felt 7; a heater 13 is also arranged in the accommodating cavity 9, and if the heater 13 is positioned between the side wall of the crucible edge 11 and the heat-insulating cylinder 4, the heater 13 is a side heater 14; if the heater 13 is positioned between the bottom of the crucible edge 11 and the heat-insulating cylinder 4, the heater 13 is a bottom heater 15, and fig. 2 and 3 only show that the side heater 14 and the bottom heater 15 are arranged in the accommodating cavity 9 at the same time, of course, only the side heater 14 may be arranged in the accommodating cavity 9, or only the bottom heater 15 may be arranged in the accommodating cavity 9, which is not limited in this embodiment. An exhaust passage 16 is further arranged on one side of the furnace body 1, which is far away from the auxiliary chamber 3, argon enters the main chamber 2 from the auxiliary chamber 3, enters the heat-insulating cylinder 4 through the through hole 8 of the first heat-insulating cover 5, and is finally exhausted along the exhaust passage 16. The heat-insulating cylinder 4 may further include a second heat-insulating cylinder 17, the second heat-insulating cylinder 17 is located between the first heat-insulating cylinder 6 and the heat-insulating felt 7, and along a direction perpendicular to the heat-insulating felt 7, an orthogonal projection of the first heat-insulating cylinder 6 overlaps an orthogonal projection of the second heat-insulating cylinder 17, of course, the outer diameter of the first heat-insulating cylinder 6 may also be set to be equal to the outer diameter of the second heat-insulating cylinder 17, the inner diameter of the first heat-insulating cylinder 6 is smaller than the inner diameter of the second heat-insulating cylinder 17, or the outer diameter of the first heat-insulating cylinder 6 is smaller than the outer diameter of the second heat-insulating cylinder 17, and the inner diameter of the first heat-insulating cylinder 6 is equal to the inner diameter of the second heat-insulating cylinder 17, which this embodiment is not particularly limited.
It can be understood that argon enters the main chamber 2 of the furnace body 1 from the auxiliary chamber 3 and is divided, a part of argon diffuses in the main chamber 2 through a gap between the first heat preservation cover 5 and the furnace body 1, the other part of argon enters the heat preservation cylinder 4 through a through hole 8 of the first heat preservation cover 5, the orthographic projection area of the first heat preservation cover 5 on the plane of the heat preservation felt 7 is M, the orthographic projection area of the through hole 8 on the plane of the heat preservation felt 7 is K, the cross-sectional area of the position where the main chamber 2 is flush with the first heat preservation cover 5 is N, the cross-sectional area is not less than 90% (M + K)/N is not more than 100%, only M + K is shown in figure 2, only M + K = N is shown in figure 3, the gap between the first heat preservation cover 5 and the furnace body 1 is reduced, under the condition that the amount of argon provided by the auxiliary chamber 3 is constant, the argon is reduced or avoided from being divided to the gap between the first heat preservation cover 5 and the furnace body 1, most or all of the argon flows into the heat preservation cylinder 4, the argon flows into the heat preservation cylinder 4 is increased, the amount of the argon flowing into the crucible 10 and the crucible is effectively protected, and the silicon oxide volatilized and the heat is not increased, and the heat of the crystal pulling process of the crystal silicon crystal growing is also is facilitated. The argon volume that flows into the inside increase of heat preservation section of thick bamboo 4 can suitably reduce the argon gas volume that 3 accessory chambers let in, guarantee to flow into the inside argon gas volume of heat preservation section of thick bamboo 4 can effectively protect the silicon solution in crucible 10 and the monocrystalline silicon of growing out not by the oxidation can, reduce and let in the argon gas volume, can enough practice thrift the argon gas quantity, can practice thrift the cost again.
Compared with the prior art, the utility model provides a can increase argon gas flow velocity and practice thrift single crystal growing furnace of argon gas has following advantage:
the utility model provides a single crystal furnace body 1 which can increase the flow rate of argon and save argon, comprising a main chamber 2, an auxiliary chamber 3 positioned at one side of the furnace body 1, the auxiliary chamber 3 communicated with the main chamber 2, and argon flowing from the auxiliary chamber 3 to the main chamber 2; the heat preservation cylinder 4 is arranged in the main chamber 2 and comprises a first heat preservation cover 5, a first heat preservation cylinder 6 and a heat preservation felt 7 which are sequentially arranged, the first heat preservation cover 5 is positioned on one side, close to the auxiliary chamber 3, of the heat preservation felt 7, the first heat preservation cover 5 is provided with a through hole 8, and the outer diameter of the first heat preservation cover 5 is larger than that of the first heat preservation cylinder 6 and is smaller than or equal to the inner diameter of the furnace body 1; the orthographic projection area of the first heat-insulating cover 5 on the plane of the heat-insulating felt 7 is M, the orthographic projection area of the through hole 8 on the plane of the heat-insulating felt 7 is K, the sectional area of the position where the main chamber 2 is flush with the first heat-insulating cover 5 is N, the ratio of (M + K)/N is more than or equal to 90% and less than or equal to 100%, when argon flows into the main chamber 2 from the auxiliary chamber 3, a part of the argon flows into the heat-insulating cylinder 4 through the through hole 8 of the first heat-insulating cover 5, the other part of the argon diffuses in the main chamber 2 through the gap between the first heat-insulating cover 5 and the furnace body 1, the interval between the first heat-insulating cover 5 and the furnace body 1 is reduced, the argon amount passing through the gap between the first heat-insulating cover 5 and the furnace body 1 can be reduced, most of the argon flows into the heat-insulating cylinder 4 through the through hole 8 of the first heat-insulating cover 5, so that the argon flow entering the heat-insulating cylinder 4 is increased, the silicon solution and the monocrystalline silicon are protected from being oxidized, the oxygen content in the furnace body 1 is reduced by 0.5-1ppma, further, the argon introduced into the main chamber 2 can be reduced, and the cost is reduced.
In some optional embodiments, with continued reference to fig. 1 and 3, m + k= n.
It can be understood that M + K = N, a cross section is taken to the plane that is on a parallel with first heat preservation lid 5 promptly, the cross-section passes through first heat preservation lid 5, the outline of first heat preservation lid 5 on the cross-section coincides with main room 2 at the interior outline on the cross-section, the outline of first heat preservation lid 5 is hugged closely furnace body 1 inner wall, can avoid having the clearance between first heat preservation lid 5 and the furnace body 1, make the argon gas that accessory chamber 3 provided all get into inside heat preservation section of thick bamboo 4, increase the inside argon gas flow of heat preservation section of thick bamboo 4, the effect of protecting silicon solution and monocrystalline silicon from being oxidized is best, furthermore, the argon gas flow grow in the heat preservation section of thick bamboo 4, can suitably reduce the argon gas volume that accessory chamber 3 let in, make the argon gas volume that accessory chamber 3 let in can satisfy the demand that silicon solution and monocrystalline silicon are not oxidized can, practice thrift the argon gas quantity, and reduce cost.
In some alternative embodiments, referring to fig. 1 and 5, fig. 5 isbase:Sub>A cross-sectional view taken along the directionbase:Sub>A-base:Sub>A' in fig. 1, the first heat-insulating cover 5 is provided withbase:Sub>A first hollow-out region 18 extending alongbase:Sub>A first direction X, which isbase:Sub>A direction in which the first heat-insulating cover 5 points to the heat-insulating felt 7,
the first heat-preserving cylinder 6 is provided with a second hollow-out area 19 extending along a second direction Y, and the second direction Y is crossed with the first direction X;
and the heat resistance module 20 is positioned between the second hollow-out area 19 and the furnace body 1, and the heat resistance module 20 penetrates through the first hollow-out area 18 and reciprocates along the first direction X.
It can be understood that the structure, shape and size of the heat-blocking module 20 can be adjusted according to actual requirements, the first heat-preserving cylinder 6 is provided with the second hollow-out area 19, the crucible 10 in the heat-preserving cylinder 4 can be charged through the second hollow-out area 19, in order to prevent the crystal pulling process, argon gas and heat escape from the second hollow-out area 19 and influence the generation of monocrystalline silicon, the heat-blocking module 20 is arranged to reciprocate along the first direction X, at least part of the heat-blocking module is positioned in the first hollow-out area 18, no matter how the position of the heat-blocking module 20 changes, the first hollow-out area 18 is always blocked, and the loss of argon gas through the first hollow-out area 18 is reduced. In the charging process, the heat-resisting module 20 ascends to expose the second hollow-out area 19, and charges the crucible 10 in the heat-preserving cylinder 4 through the second hollow-out area 19; in the crystal pulling process, the heat-resisting module 20 descends to cover the second hollow-out area 19, so that the argon and heat in the heat-insulating cylinder 4 are prevented from escaping from the second hollow-out area 19, the quality of generated monocrystalline silicon is guaranteed, and the loss of argon is reduced.
In some alternative embodiments, referring to fig. 1 and 6, fig. 6 is a cross-sectional view along the direction C-C' in fig. 1, the heat-resistant module 20 is fan-shaped in the orthographic projection of the heat-resistant felt 7 on the plane, and the heat-resistant module 20 is attached to the first heat-preserving container 6.
It can be understood that, for convenience of illustration, only the first heat preservation cylinder 6, the heat preservation felt 7, the furnace body 1 and the heat blocking module 20 are illustrated in fig. 6, and other structures are not illustrated, the orthographic projection of the first heat preservation cylinder 6 on the plane where the heat preservation felt 7 is located is an annular shape, the heat blocking module 20 is attached to the first heat preservation cylinder 6, and the orthographic projection of the heat blocking module 20 on the plane where the heat preservation felt 7 is located is a fan-ring shape, which can be attached to the contour of the first heat preservation cylinder 6, preferably, the curvature of the outer diameter of the first heat preservation cylinder 6 is the same as the curvature of the curved surface of the heat blocking module 20 on the side close to the first heat preservation cylinder 6, and the attaching effect of the heat blocking module 20 to the first heat preservation cylinder 6 is the best, so as to avoid a gap between the first heat preservation cylinder 6 and the heat blocking module 20, and argon and heat can escape from the second hollow-out area 19.
In some alternative embodiments, with continued reference to fig. 1 and 5, further comprising a heat shield 21 located between the sub-chamber 3 and the thermal cylinder 4, the heat shield 21 reciprocating in the first direction X;
the heat-shielding water pipe 22 extends along the first direction X and penetrates through the furnace body 1, and one end of the heat-shielding water pipe 22 is connected with one end of the heat shield 21 far away from the heat-insulating cylinder 4;
the connecting shaft 23 comprises a first shaft 231 and a second shaft 232 which are connected, one end of the first shaft 231, which is far away from the second shaft 232, is connected with the heat shielding water pipe 22, the second shaft 232 penetrates through the first hollow-out area 18, and one end of the second shaft 232, which is far away from the first shaft 231, is connected with the heat insulation module 20.
It can be understood that fig. 5 only shows that the heat shield 21 is in an inverted truncated cone shape, the position of the heat shield 21 corresponds to the through hole 8, the heat shield water pipe 22 can drive the heat shield 21 to lift relative to the crucible 10, the heat resisting module 20 is connected with the heat shield water pipe 22 through the connecting shaft 23, and when the heat shield water pipe 22 rises, the heat shield 21 and the heat resisting module 20 are driven to rise; when the heat shield water pipe 22 descends, the heat shield 21 and the heat resistance module 20 are driven to descend, and the heat resistance module 20 reciprocates along the first direction X.
In some alternative embodiments, referring to fig. 7 and 8, fig. 7 is another schematic structural view of the single crystal furnace capable of increasing the flow rate of argon and saving argon provided by the present invention, fig. 8 is a cross-sectional view taken along direction D-D' of fig. 7, the furnace body 1 is provided with a third hollow-out region 24 extending along the second direction Y;
the feeding equipment 25 is positioned outside the furnace body 1;
one end of the feeding channel 26 is communicated with the feeding device 25, the other end of the feeding channel penetrates through the second hollow-out area 19 and the third hollow-out area 24, and the feeding channel 26 is detachably connected with the second hollow-out area 19 and the third hollow-out area 24 respectively.
It can be understood that, for convenience of illustration, the feeding channel 26 is not illustrated in fig. 8, one end of the feeding channel 26 is communicated with the feeding device 25, and the other end of the feeding channel 26 penetrates through the second hollow-out area 19 and the third hollow-out area 24, the feeding channel 26 is detachably connected with the second hollow-out area 19 and the third hollow-out area 24, when the crucible 10 is fed with the raw material, the feeding channel 26 penetrates through the second hollow-out area 19 and the third hollow-out area 24, and the raw material provided by the feeding device 25 is fed into the crucible 10 through the feeding channel 26; in the crystal pulling process, the feeding channel 26 is pushed out of the furnace body 1, that is, the feeding channel 26 is detached from the second hollow-out area 19 and the third hollow-out area 24, so that the heat-blocking module 20 can conveniently descend to block the second hollow-out area 19.
In some alternative embodiments, with continued reference to fig. 7 and 8, the second hollow-out region 19 overlaps the third hollow-out region 24 along the second direction Y, and the external diameter of the feed channel 26 is equal to the internal diameter of the second hollow-out region 19.
It can be understood that, along the second direction Y, the second hollow-out area 19 overlaps with the third hollow-out area 24, the outer diameter of the feeding channel 26 is equal to the inner diameter of the second hollow-out area 19, when the feeding channel 26 passes through the second hollow-out area 19 and the third hollow-out area 24, there is no gap between the second hollow-out area 19 and the feeding channel 26, and there is no gap between the third hollow-out area 24 and the feeding channel 26, so as to avoid the area of the second hollow-out area 19 and the area of the third hollow-out area 24 from being too large, thereby reducing the loss of argon gas and heat.
In some alternative embodiments, with continued reference to fig. 7 and 8, along the first direction X, the height of the first heat insulation cylinder 6 is P, the diameter of the second hollow-out area 19 is Q, the height of the heat resistance module 20 is R, the height range of the heat resistance module 20 is S, and Q ≦ S ≦ P-R.
It can be understood that if S < Q, the heat blocking module 20 cannot completely block the second hollow-out area 19; the P-R is set to be equal to or less than S, so as to prevent the stroke of the heat-resistant module 20 from being too large, and the heat-resistant module 20 can be adjusted according to actual needs as long as the heat-resistant module 20 ascends to expose the second hollow-out area 19 and descends to shield the second hollow-out area 19.
In some alternative embodiments, with continued reference to fig. 1, 5 and 6, the area of the heat blocking module 20 is greater than the area of the second hollowed-out area 19.
It can be understood that, when the area of the heat blocking module 20 is larger than the area of the second hollow-out area 19, the heat blocking module 20 can completely cover the second hollow-out area 19, and can prevent the argon gas and the heat from escaping. Preferably, when the curvature of the outer diameter of the first heat-preserving cylinder 6 is the same as the curvature of the curved surface of the heat-blocking module 20 on the side close to the first heat-preserving cylinder 6, and the second hollow-out area 19 is completely covered by the heat module, the effect of preventing the argon gas and the heat from escaping is the best.
In some alternative embodiments, with continued reference to fig. 1, 4 and 5, fig. 8 is a cross-sectional view taken along the direction D-D' of fig. 1, and the first hollow-out region 18 overlaps with the heat-blocking module 20 along the first direction X.
It can be understood that, for the convenience of viewing, only the structures of the first heat insulation cover 5, the first hollow-out region 18 and the heat blocking module 20 are illustrated in fig. 4, in the first direction X, the first hollow-out region 18 overlaps with the heat blocking module 20, and the heat blocking module 20 is partially located in the first hollow-out region 18, that is, there is no gap between the heat blocking module 20 and the first hollow-out region 18, so that not only the argon gas is prevented from being shunted through the first hollow-out region 18, but also the eddy current is prevented from being formed at the first hollow-out region 18.
According to the above embodiment, the utility model provides a can increase argon gas flow rate and practice thrift the single crystal growing furnace of argon gas has realized following beneficial effect at least:
the utility model provides a single crystal growing furnace body which can increase the flow rate of argon and save argon, comprising a main chamber, a secondary chamber positioned at one side of the furnace body, the secondary chamber communicated with the main chamber, and the argon flowing from the secondary chamber to the main chamber; the heat preservation cylinder is arranged in the main chamber and comprises a first heat preservation cover, a first heat preservation cylinder and a heat preservation felt which are sequentially arranged, the first heat preservation cover is positioned on one side, close to the auxiliary chamber, of the heat preservation felt, the first heat preservation cover is provided with a through hole, and the outer diameter of the first heat preservation cover is larger than that of the first heat preservation cylinder and smaller than or equal to the inner diameter of the furnace body; the area of the first heat-preservation cover in the orthographic projection of the plane of the heat-preservation felt is M, the area of the through hole in the orthographic projection of the heat-preservation felt in the plane of the heat-preservation felt is K, the sectional area of the position, which is parallel to the first heat-preservation cover, of the main chamber is N, the ratio of (M + K)/N is more than or equal to 100% and is more than or equal to 90%, when argon flows into the main chamber from the auxiliary chamber, one part of argon flows into the inside of the heat-preservation cylinder through the through hole of the first heat-preservation cover, the other part of argon is diffused in the main chamber through the gap between the first heat-preservation cover and the furnace body, the interval between the first heat-preservation cover and the furnace body is reduced, the argon amount passing through the gap between the first heat-preservation cover and the furnace body can be reduced, and most of argon flows into the inside of the heat-preservation cylinder through the through hole of the first heat-preservation cover, so that the argon gas flow entering the inside of the heat-preservation cylinder is increased, the silicon solution and the protection from being oxidized can be further realized, the main chamber can also be reduced, and the cost is reduced.
Although certain specific embodiments of the present invention have been described in detail by way of example, it should be understood by those skilled in the art that the foregoing examples are for purposes of illustration only and are not intended to limit the scope of the invention. It will be appreciated by those skilled in the art that modifications may be made to the above embodiments without departing from the scope and spirit of the invention. The scope of the invention is defined by the appended claims.
Claims (10)
1. A single crystal furnace capable of increasing the flow rate of argon gas and saving argon gas, comprising:
a furnace body including a main chamber;
the auxiliary chamber is positioned on one side of the furnace body and communicated with the main chamber;
the heat preservation cylinder is arranged in the main chamber and comprises a first heat preservation cover, a first heat preservation cylinder and a heat preservation felt which are sequentially arranged, the first heat preservation cover is positioned on one side, close to the auxiliary chamber, of the heat preservation felt, the first heat preservation cover is provided with a through hole, and the outer diameter of the first heat preservation cover is larger than that of the first heat preservation cylinder and smaller than or equal to the inner diameter of the furnace body;
the area of the orthographic projection of the first heat-preservation cover on the plane of the heat-preservation felt is M, the area of the orthographic projection of the through hole on the plane of the heat-preservation felt is K, the sectional area of the position, which is parallel and level to the first heat-preservation cover, of the main chamber is N, and the ratio of (M + K)/N is more than or equal to 90% and less than or equal to 100%.
2. The argon flow rate increasing and argon gas saving single crystal furnace according to claim 1, wherein M + K = N.
3. The argon gas flow rate increasing and argon gas saving single crystal furnace according to claim 1, wherein the first heat-preserving cover is provided with a first hollow-out area extending along a first direction, the first direction is a direction in which the first heat-preserving cover points to the heat-preserving felt,
the first heat preservation cylinder is provided with a second hollow-out area extending along a second direction, and the second direction is crossed with the first direction;
and the heat resistance module is positioned between the second hollow-out area and the furnace body, penetrates through the first hollow-out area and reciprocates along the first direction.
4. The single crystal furnace capable of increasing the flow rate of argon and saving argon according to claim 3, wherein the heat-resistant module is in a fan-shaped ring shape in the orthographic projection of the heat-insulating felt plane, and the heat-resistant module is attached to the first heat-insulating cylinder.
5. The argon gas flow rate increasing and argon gas saving single crystal furnace according to claim 3, further comprising a heat shield between said sub-chamber and said heat-holding cylinder, said heat shield reciprocating in said first direction;
the heat shield water pipe extends along the first direction and penetrates through the furnace body, and one end of the heat shield water pipe is connected with one end of the heat shield, which is far away from the heat preservation cylinder;
the connecting shaft comprises a first shaft and a second shaft which are connected, one end of the first shaft, which is far away from the second shaft, is connected with the heat shielding water pipe, the second shaft penetrates through the first hollow area, and one end of the second shaft, which is far away from the first shaft, is connected with the heat resistance module.
6. The single crystal furnace capable of increasing the flow rate of argon and saving argon according to claim 3, wherein the furnace body is provided with a third hollow-out region extending along the second direction;
the feeding equipment is positioned outside the furnace body;
and one end of the feeding channel is communicated with the feeding equipment, the other end of the feeding channel penetrates through the second hollowed-out area and the third hollowed-out area, and the feeding channel is detachably connected with the second hollowed-out area and the third hollowed-out area respectively.
7. The argon gas flow rate increasing and argon gas saving single crystal furnace according to claim 6, wherein the second hollow area is overlapped with the third hollow area along the second direction, and an outer diameter of the feed channel is equal to an inner diameter of the second hollow area.
8. The single crystal furnace capable of increasing the flow rate of argon and saving argon according to claim 3, wherein along the first direction, the height of the first heat-preserving cylinder is P, the diameter of the second hollow-out area is Q, the height of the heat-resisting module is R, the moving height of the heat-resisting module is S, and Q is less than or equal to S and less than or equal to P-R.
9. The argon flow rate increasing and argon gas saving single crystal furnace according to claim 3, wherein the area of the heat resisting module is larger than that of the second hollow area.
10. The argon gas flow rate increasing and argon gas saving single crystal furnace of claim 3, wherein the first hollowed-out area overlaps with the heat blocking module along the first direction.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222241776.5U CN217973492U (en) | 2022-08-25 | 2022-08-25 | Single crystal furnace capable of increasing argon flow rate and saving argon |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222241776.5U CN217973492U (en) | 2022-08-25 | 2022-08-25 | Single crystal furnace capable of increasing argon flow rate and saving argon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217973492U true CN217973492U (en) | 2022-12-06 |
Family
ID=84260557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202222241776.5U Active CN217973492U (en) | 2022-08-25 | 2022-08-25 | Single crystal furnace capable of increasing argon flow rate and saving argon |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217973492U (en) |
-
2022
- 2022-08-25 CN CN202222241776.5U patent/CN217973492U/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN217973492U (en) | Single crystal furnace capable of increasing argon flow rate and saving argon | |
| CN104389020A (en) | Process and device for rapidly growing sapphire crystal material of corundum system by virtue of flame fusion method | |
| CN202164386U (en) | Single crystal furnace made of ultra-pure germanium | |
| CN111926383A (en) | Novel energy-saving semiconductor graphite thermal field | |
| CN210826446U (en) | A guiding device and crystalline silicon ingot furnace for crystalline silicon ingot furnace | |
| CN202131396U (en) | Crystal growing furnace thermal field device with gas guiding ring | |
| CN108018600A (en) | Monocrystal growing furnace heat shielding and its manufacture method | |
| CN107099842A (en) | The preparation method of monocrystalline silicon | |
| FR2581056B1 (en) | COATING OF THE GLASS MANUFACTURED IN A FLOATING PLANT WITH PYROLISABLE POWDER COMPOUNDS | |
| CN208717464U (en) | A kind of water cooling heat shielding structure of single crystal growing furnace | |
| CN211199471U (en) | G6 polycrystal ingot furnace | |
| CN212404352U (en) | Gas stirring device and ingot furnace | |
| CN211522362U (en) | Casting silicon single crystal furnace with seed crystal lifting unit | |
| CN109183148A (en) | A kind of ingot furnace | |
| CN217298080U (en) | Device for increasing pulling speed of single crystal | |
| KR102620589B1 (en) | Manufacturing method and reactor for polycrystalline silicon rod | |
| CN114059173A (en) | Device and method for preparing gallium oxide material rod | |
| CN209010572U (en) | A kind of horizontal magnetic furnace of novel vertical lifting | |
| CN218034436U (en) | Upper cover atmosphere air inlet preheating device of vacuum sintering furnace stone ink box | |
| CN208023108U (en) | A kind of polycrystalline silicon ingot or purifying furnace | |
| CN207294941U (en) | Square silicon core ingot casting furnace body | |
| CN207294936U (en) | A kind of polycrystalline ingot furnace | |
| CN206591033U (en) | A kind of high purity quartz process units | |
| EP4101951B1 (en) | Czochralski single crystal furnace for preparing monocrystalline silicon and method for preparing monocrystalline silicon | |
| CN2744697Y (en) | Thermal system device for silicon single crystal furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |