CN210826446U - A guiding device and crystalline silicon ingot furnace for crystalline silicon ingot furnace - Google Patents
A guiding device and crystalline silicon ingot furnace for crystalline silicon ingot furnace Download PDFInfo
- Publication number
- CN210826446U CN210826446U CN201921853547.0U CN201921853547U CN210826446U CN 210826446 U CN210826446 U CN 210826446U CN 201921853547 U CN201921853547 U CN 201921853547U CN 210826446 U CN210826446 U CN 210826446U
- Authority
- CN
- China
- Prior art keywords
- silicon ingot
- crystalline silicon
- flow
- crucible
- cylinder
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 59
- 238000009413 insulation Methods 0.000 claims description 22
- 238000009826 distribution Methods 0.000 claims description 6
- 230000001681 protective effect Effects 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 25
- 229910052710 silicon Inorganic materials 0.000 abstract description 25
- 239000010703 silicon Substances 0.000 abstract description 25
- 230000000694 effects Effects 0.000 abstract description 14
- 238000005266 casting Methods 0.000 abstract description 12
- 230000002349 favourable effect Effects 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 11
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 9
- 239000012535 impurity Substances 0.000 description 9
- 239000007788 liquid Substances 0.000 description 9
- 229910002804 graphite Inorganic materials 0.000 description 7
- 239000010439 graphite Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000011261 inert gas Substances 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 235000017166 Bambusa arundinacea Nutrition 0.000 description 3
- 235000017491 Bambusa tulda Nutrition 0.000 description 3
- 241001330002 Bambuseae Species 0.000 description 3
- 235000015334 Phyllostachys viridis Nutrition 0.000 description 3
- 239000011425 bamboo Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000004781 supercooling Methods 0.000 description 3
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
Images
Landscapes
- Silicon Compounds (AREA)
Abstract
The utility model provides a flow guiding device for a crystalline silicon ingot furnace, which comprises a fixed sleeve and at least one hollow flow guiding cylinder, wherein the fixed sleeve is used for fixing the flow guiding cylinder on the crystalline silicon ingot furnace; and a spiral groove is formed on the inner side of the cylinder wall between the two ports of the guide cylinder, and gas can form spiral airflow after passing through the guide device. Through guiding device, can introduce rotatory vortex gas to crucible central part, this rotatory vortex gas has certain centrifugal force effect, is favorable to follow-up silicon ingot row miscellaneous of crystalline silicon ingot casting process. The utility model also provides a crystalline silicon ingot furnace.
Description
Technical Field
The utility model relates to a crystalline silicon ingot casting technical field especially relates to an air duct and crystalline silicon ingot casting furnace for crystalline silicon ingot casting furnace.
Background
The solar cell industry is one of the fastest growing industries in recent years, and among various types of solar cells, the crystalline silicon solar cell continues to keep the leading position due to high conversion efficiency and mature technology. At present, crystalline silicon is mainly cast by an existing crystalline silicon ingot furnace. In the ingot casting process of the crystalline silicon, the carbon content can seriously affect the electrical property of the crystalline silicon, so that the conversion efficiency of the crystalline silicon solar cell is reduced, and in addition, the high-concentration carbon content can also affect the mechanical property of a silicon wafer. At present, a flow guide device is mainly adopted in the industry, impurities are discharged in a mode of introducing inert gas into a crystalline silicon ingot furnace, and the inert gas is introduced from the central part of a crucible in the crystalline silicon ingot furnace and then discharged from the periphery. However, the traditional flow guide device often blows gas into the crucible directly, which causes overcooling of the center of the crucible and affects the quality of silicon ingots; and has a limited effect of removing impurities.
SUMMERY OF THE UTILITY MODEL
In view of this, the utility model provides a guiding device and crystalline silicon ingot furnace for crystalline silicon ingot furnace, through guiding device can introduce the spiral air current to crucible central part, and this spiral air current has certain centrifugal force effect, is favorable to follow-up crystalline silicon ingot casting process's silicon bulk to arrange miscellaneous.
In a first aspect, the utility model provides a guiding device for a crystalline silicon ingot furnace, which comprises a fixed sleeve and at least one hollow guiding cylinder, wherein the fixed sleeve is used for fixing the guiding cylinder on the crystalline silicon ingot furnace; and a spiral groove is formed on the inner side of the cylinder wall between the two ports of the guide cylinder, and gas can form spiral airflow after passing through the guide device.
Optionally, the thickness of the wall of the guide cylinder is 5-10 mm; the depth of the spiral groove accounts for 1/3-2/3 of the thickness of the wall of the guide shell.
Optionally, the cross-sectional width of the spiral groove is 4-8 mm.
Optionally, an included angle between a tangent line of the bottom surface of the spiral groove and the central axis of the guide shell is 35-60 °.
Optionally, the inner diameter of the guide shell is 60-70 mm.
Optionally, the fixed sleeve further comprises a diversion cavity, the diversion cavity is communicated with the guide shell, and the diversion cavity is further used for being communicated with an external air source.
Optionally, the fixing sleeve is sleeved at one end of the guide shell to fix the guide shell.
In a second aspect, the present invention further provides a crystalline silicon ingot furnace, which comprises a furnace body, a crucible, a heat exchange platform, a protection plate, a heater, a heat insulation cage and a flow guiding device as the first aspect of the present invention, wherein the crucible is arranged in the heat exchange platform, the protection plate and the heater are sequentially sleeved on the periphery of the crucible, and the crucible, the heat exchange platform, the protection plate and the heater are all arranged in the heat insulation cage; the fixed sleeve of the flow guide device is arranged on the furnace body, the flow guide cylinder sequentially penetrates through the heat insulation cage and the top of the heater and extends to the upper part of the opening of the crucible, and the length direction of the flow guide cylinder is perpendicular to the bottom surface of the crucible.
Optionally, the height of the guide shell from the plane of the opening of the crucible is 10-15 cm.
Optionally, the flow rate of the gas introduced from each guide cylinder is 20-30L/min.
Optionally, the heater includes a top heater disposed at a top of the crucible and a side heater disposed at a periphery of the shield.
Optionally, the thermal insulation cage comprises a thermal field chamber formed by a top thermal insulation plate, a side thermal insulation plate and a bottom thermal insulation plate.
Optionally, the insulation cage comprises at least one layer of insulation.
Optionally, the polycrystalline silicon ingot casting thermal field structure further comprises a graphite cover plate for covering the crucible.
The utility model discloses there is beneficial effect:
(1) a guiding device for crystalline silicon ingot furnace, its draft tube that includes that section of thick bamboo wall inboard is equipped with spiral groove, through guiding device can introduce the spiral air current to crucible central point, and this spiral air current has certain centrifugal force effect, is favorable to follow-up crystalline silicon ingot casting process's silicon bulk to arrange miscellaneous.
(2) The crystalline silicon ingot furnace comprises the flow guiding device, and in the crystalline silicon ingot casting process, inert gas can be introduced into the furnace through the flow guiding device and is introduced into the crucible in a spiral airflow mode, and the spiral airflow has the centrifugal force effect, so that impurities can be favorably diffused to the periphery of a silicon ingot, and the impurity removal of the silicon ingot is favorably realized; and, this application guiding device in crystalline silicon ingot furnace can avoid gaseous direct blowing in crucible in along perpendicular crucible bottom surface direction and lead to the supercooling phenomenon in crucible center, promotes silicon ingot quality greatly. The silicon ingot prepared by the crystalline silicon ingot furnace has the characteristics of good quality and high yield, and can greatly reduce the production cost.
Advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of embodiments of the invention.
Drawings
To more clearly illustrate the structural features and effects of the present invention, the following detailed description is given with reference to the accompanying drawings and specific embodiments.
Fig. 1 is a schematic structural diagram of a flow guiding device 10 according to an embodiment of the present invention;
fig. 2 is a schematic cross-sectional view of a draft tube of the draft gear 10 according to an embodiment of the present invention;
fig. 3 is a schematic partial sectional structure view of a draft tube of the draft gear 10 of fig. 2 according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a crystalline silicon ingot furnace 100 according to an embodiment of the present invention;
fig. 5 is a diagram illustrating the surface effect of silicon liquid in a crucible after ventilation of different crystalline silicon ingot furnaces according to an embodiment of the present invention; fig. 5 (a) is a silicon liquid surface effect diagram in the crystalline silicon ingot furnace before modification, and fig. 5 (B) is a silicon liquid surface effect diagram in the crystalline silicon ingot furnace after modification.
Detailed Description
The following is a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the embodiment of the present invention, and these improvements and decorations are also considered as the protection scope of the embodiment of the present invention.
As shown in fig. 1 and fig. 2, a flow guiding device 10 for a crystalline silicon ingot furnace provided by the present invention includes a fixing sleeve 11 and at least one hollow flow guiding cylinder 12, where the fixing sleeve 10 is used to fix the flow guiding cylinder 12 on the crystalline silicon ingot furnace 20; a spiral groove 122 is formed on the inner side of the cylinder wall 121 between the two ports of the guide cylinder 12, and the gas can form spiral airflow after passing through the guide device 10.
In the embodiment of the present invention, the lower end cap of the fixing sleeve 11 and the guide cylinder 12 is fixed together to fix the guide cylinder 12. The fixed sleeve 11 can be arranged at the top of the crystalline silicon ingot furnace.
In the embodiment of the present invention, the thickness of the wall of the draft tube 12 is 5-15 mm. Further, optionally, the thickness of the wall of the guide shell 12 is 5-15 mm. Further, optionally, the thickness of the wall of the guide shell 12 is 5-15 mm.
Referring to fig. 3, the depth of the spiral groove 122 on the inner side of the wall 121 of the guide shell 12 is shown as H. Optionally, the depth of the spiral groove 122 is 1/3-2/3 of the thickness of the cylinder wall. Optionally, the depth of the spiral groove 122 is 1/3-1/2 of the thickness of the cylinder wall. The guide cylinder within the thickness range can simultaneously take the stability of the structure into consideration, and is favorable for forming spiral airflow.
Alternatively, the depth of the spiral groove 122 may be, but is not limited to, 3-10 mm. Further, optionally, the depth of the spiral groove may be, but is not limited to, 5-10 mm. For example, the depth of the spiral groove may be, but is not limited to, 5mm, or 8mm, or 10 mm.
In the embodiment of the present invention, the cross-sectional width of the spiral groove 122 is as shown in D, and the cross-sectional width of the spiral groove 122 is the shortest distance between the two side walls of the groove.
Optionally, the cross-sectional width of the spiral groove 122 is 4-8 mm. For example, the cross-sectional width of the spiral groove may be, but is not limited to, 4mm, or 5mm, or 6mm, or 7mm, or 8 mm.
In the embodiment of the present invention, the included angle between the tangent line of the bottom surface of the spiral groove 122 and the central axis of the draft tube is shown as α, and fig. 3 is shown.
Alternatively, the tangent to the bottom surface of the spiral groove 122 may include, but is not limited to, an angle of 35-60 ° with the central axis of the guide shell 12.
Alternatively, the tangent to the bottom surface of the spiral groove 122 may include, but is not limited to, 45-60 ° with respect to the central axis of the guide shell 12.
For example, the tangent to the bottom surface of the spiral groove 122 may include, but is not limited to, 35 °, 40 °, 45 °, 50 °, 55 °, 60 ° with respect to the central axis of the guide shell 12.
The utility model discloses in the embodiment, through the contained angle of adjusting not equidimension scope, be favorable to adjusting by the centrifugal force of the spiral air current that guiding device produced and the coverage of spiral air current.
In the embodiment of the utility model, the inner diameter and the length of the guide cylinder can be adjusted based on the implementation and application process; when the silicon ingot furnace is used for a crystalline silicon ingot furnace with a larger size, the length and the inner diameter of the silicon ingot furnace can correspond to the larger size; when the silicon ingot furnace is used for a crystalline silicon ingot furnace with smaller size, the length and the inner diameter of the furnace can correspond to the smaller size.
Optionally, the inner diameter of the guide shell is 60-70 mm.
Further, optionally, the inner diameters of the two ports of the guide shell may be the same or different. For example, the inner diameter of the guide shell may gradually increase from one port to the other, or gradually decrease.
The utility model discloses in the embodiment, the fixed sleeve still includes the reposition of redundant personnel chamber, the reposition of redundant personnel chamber with the draft tube link up, the reposition of redundant personnel chamber still is used for communicateing outside air supply. When the flow guide device comprises a plurality of flow guide cylinders, the fixed sleeve respectively conveys gas to each flow guide cylinder through the flow distribution cavity.
In an embodiment of the present invention, the draft tube has properties of firmness and high temperature resistance. For example, the guide shell may include, but is not limited to, a graphite guide shell, a quartz guide shell, or a refractory metal guide shell.
The utility model discloses in the embodiment, guiding device, its draft tube that includes that the section of thick bamboo wall inboard is equipped with spiral groove, through guiding device can introduce the spiral air current to crucible central point, and this spiral air current has certain centrifugal force effect, is favorable to follow-up silicon bulk row of crystalline silicon ingot casting process miscellaneous.
As shown in fig. 4, in order to provide the crystalline silicon ingot furnace 100 of the present invention, the crystalline silicon ingot furnace 100 includes the flow guiding device 10 provided in the previous embodiment. Specifically, the crystalline silicon ingot furnace 100 further comprises a furnace body 30, a crucible 40, a heat exchange table 50, a protection plate 60, a heater 70 and a heat insulation cage 80 which are arranged in the furnace body 30, the crucible 40 is arranged on the heat exchange table 50, the protection plate 60 and the heater 70 are sequentially sleeved on the periphery of the crucible 40, the heat exchange table 50, the protection plate 60 and the heater 70 are all arranged in the heat insulation cage 80, a fixing sleeve 11 of the flow guide device 10 is arranged at the top of the furnace body, the flow guide cylinder 12 sequentially penetrates through the tops of the heat insulation cage 80 and the heater 70 and extends to the upper part of an opening of the crucible 40, and the length direction of the flow guide cylinder 12 is perpendicular to the bottom surface of the crucible 40.
In an embodiment of the present invention, the crucible may be a quartz crucible, a graphite crucible, or a ceramic crucible. Optionally, the crucible further comprises a crucible made of other hard materials. Optionally, the crucible surface may also include, but is not limited to, a silicon nitride layer.
In the present embodiment, the heater 70 includes a top heater 71 and a side heater 72, the top heater 71 is disposed on the top of the crucible 40, the side heater 72 is disposed in the space between the shield 60 and the heat insulation cage 80, and the side heater 72 is disposed on the periphery of the shield 60. The top heater 71 is provided with at least one first through hole through which the guide shell 12 passes to reach the open upper portion of the crucible 40.
Alternatively, the heat exchange station 50 may be a DS plate. For example, the hot swap station may be a DS Block (DS-Block).
In the embodiment of the present invention, the sectional shape of the protective plate 60 matches the sectional shape of the crucible. For example. The shield may, but is not limited to, abut the crucible. Optionally, when the guard plate is not tightly attached to the crucible and the guard plate has a cross-sectional shape different from that of the crucible, the gap between the guard plate and the crucible is filled with a graphite soft felt. The protective plate and the crucible can be effectively attached and matched through the filled graphite soft felt, and the heat distribution of the same horizontal plane of the crucible is more uniform and the heat dead angle is not easy to form under the symmetrically distributed heaters.
In embodiments of the present invention, the thermal insulation cage 80 comprises a sealed thermal field chamber formed by the top, side and bottom thermal insulation panels. Optionally, the insulation cage comprises at least one layer of insulation. The utility model discloses in, thermal-insulated cage has the thermal-insulated effect of good heat preservation, can greatly reduce scattering and disappearing of temperature, guarantees the symmetric distribution of whole polycrystalline silicon ingot casting thermal field structure temperature, and reduces the consumption in thermal field.
Optionally, at least one second through hole is arranged on the top heat insulation plate; the guide shell 12 passes through the second through hole to reach the heat insulation cage 80.
Optionally, the crystalline silicon ingot furnace 100 further comprises a graphite cover plate for covering the crucible. The graphite cover plate can be but is not limited to be provided with at least a third through hole. The guide shell 12 may pass through the third through hole but is not limited thereto.
In the embodiment of the utility model, the height of the guide shell from the plane where the opening of the crucible is located is 10-15 cm. Further, optionally, the height of the guide shell from the plane of the opening of the crucible is 12-15 cm. Within the distance range, the impurity removal effect of the spiral airflow sent into the crucible by the guide cylinder is better and outstanding; and the phenomenon of supercooling of the gas to the center of the crucible can be effectively avoided.
The utility model discloses in the embodiment, by the gas flow that guiding device let in to the stove can be based on the size of actual crystalline silicon ingot furnace to and actual production technology adjusts. By adjusting the gas flow and the spiral groove parameters of the guide cylinder, the strength of the spiral gas flow can be changed, and the silicon ingot impurity removal can be further regulated and controlled.
Optionally, the flow rate of the gas introduced from each guide cylinder is 20-30L/min.
The utility model discloses in the embodiment, other concrete injectings of guiding device 10 are unanimous with the injectment to guiding device in the above embodiment, and no longer repeated description in this embodiment.
The utility model discloses in the embodiment, except guiding device 10, other subassemblies of crystalline silicon ingot furnace 100 can be but not limited to current conventional structure, the utility model discloses no longer specifically list among the embodiment.
The embodiment of the utility model provides a crystalline silicon ingot furnace 100, include the guiding device, in the crystalline silicon ingot casting process, can introduce inert gas to the stove through the guiding device, and let in the crucible with the spiral air current form, because the spiral air current has the centrifugal force effect, be favorable to diffusing impurity around to the silicon bulk, be favorable to the silicon bulk to arrange miscellaneous; and, this application guiding device in crystalline silicon ingot furnace can avoid gaseous direct blowing in crucible in along perpendicular crucible bottom surface direction and lead to the supercooling phenomenon in crucible center, promotes silicon ingot quality greatly. The silicon ingot prepared by the crystalline silicon ingot furnace has the characteristics of good quality and high yield, and can greatly reduce the production cost.
Effects of the embodiment
The crystalline silicon ingot furnace provided by the embodiment of the utility model and the crystalline silicon ingot furnace with a common guide cylinder (no rotary groove is arranged on the inner side of the cylinder wall) are respectively tested; introducing inert gas into the crucible at a flow rate of 20-30L/min through a guide cylinder, wherein the distance between the guide cylinder and the plane of the opening of the crucible is 15cm, and the result is shown in figure 5.
From the test result of the crystalline silicon ingot furnace before the improvement in fig. 5 (a), it can be known that the inner side of the cylinder wall of the traditional guide cylinder is not provided with a special structure and is not provided with a rotary groove, and when gas passes through the guide cylinder and is input into the crucible, the liquid level fluctuation of the silicon liquid in the crucible is small and is relatively calm. From the crystal silicon ingot furnace test result after the improvement in figure 5 (B), the embodiment of the utility model provides a crystal silicon ingot furnace is equipped with spiral groove on the section of thick bamboo wall inboard of draft tube, after gaseous passing through and input crucible from this draft tube, the liquid level fluctuation is great, and the liquid level becomes ripple form fluctuation, and impurity on the liquid level is along with the ripple to silicon liquid diffusion all around, makes impurity toward limit portion concentrate.
It is to be noted that variations and modifications can be made to the above-described embodiments by those skilled in the art in light of the disclosure and description of the above description. Therefore, the present invention is not limited to the specific embodiments disclosed and described above, and some equivalent modifications and variations of the present invention should be covered by the protection scope of the claims of the present invention. Furthermore, although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation.
Claims (10)
1. The flow guide device for the crystalline silicon ingot furnace is characterized by comprising a fixed sleeve and at least one hollow flow guide cylinder, wherein the fixed sleeve is used for fixing the flow guide cylinder on the crystalline silicon ingot furnace; and a spiral groove is formed on the inner side of the cylinder wall between the two ports of the guide cylinder, and gas can form spiral airflow after passing through the guide device.
2. The flow guiding device of claim 1, wherein the wall thickness of the flow guiding cylinder is 5-15 mm; the depth of the spiral groove accounts for 1/3-2/3 of the thickness of the wall of the guide shell.
3. Deflector according to claim 1, wherein the cross-sectional width of the spiral groove is 4-8 mm.
4. The flow guide device of claim 1, wherein the tangent to the bottom surface of the spiral groove forms an angle of 35-60 ° with the central axis of the flow guide cylinder.
5. Flow guiding device according to claim 1, characterised in that the inner diameter of the flow guiding cylinder is 60-70 mm.
6. The flow guide device of claim 1, wherein the fixed sleeve further comprises a flow distribution cavity, the flow distribution cavity is communicated with the flow guide cylinder, and the flow distribution cavity is further used for being communicated with an external air source.
7. The flow guiding device as claimed in claim 1, wherein the fixing sleeve is sleeved on one end of the flow guiding cylinder to fix the flow guiding cylinder.
8. A crystalline silicon ingot furnace is characterized by comprising a furnace body, a crucible, a heat exchange platform, a protective plate, a heater, a heat insulation cage and a flow guide device according to any one of claims 1 to 7, wherein the crucible, the heat exchange platform, the protective plate, the heater and the heat insulation cage are arranged in the furnace body; the fixed sleeve of the flow guide device is arranged on the furnace body, the flow guide cylinder sequentially penetrates through the heat insulation cage and the top of the heater and extends to the upper part of the opening of the crucible, and the length direction of the flow guide cylinder is perpendicular to the bottom surface of the crucible.
9. The crystalline silicon ingot furnace as set forth in claim 8, wherein the height of the guide cylinder from the plane of the crucible opening is 10-15 cm.
10. The crystalline silicon ingot furnace as set forth in claim 8, wherein the flow rate of the gas introduced from each guide cylinder is 20-30L/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921853547.0U CN210826446U (en) | 2019-10-30 | 2019-10-30 | A guiding device and crystalline silicon ingot furnace for crystalline silicon ingot furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921853547.0U CN210826446U (en) | 2019-10-30 | 2019-10-30 | A guiding device and crystalline silicon ingot furnace for crystalline silicon ingot furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210826446U true CN210826446U (en) | 2020-06-23 |
Family
ID=71271596
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921853547.0U Expired - Fee Related CN210826446U (en) | 2019-10-30 | 2019-10-30 | A guiding device and crystalline silicon ingot furnace for crystalline silicon ingot furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210826446U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113699581A (en) * | 2021-04-14 | 2021-11-26 | 赛维Ldk太阳能高科技(新余)有限公司 | Ingot casting single crystal furnace and preparation method of ingot casting single crystal silicon |
-
2019
- 2019-10-30 CN CN201921853547.0U patent/CN210826446U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113699581A (en) * | 2021-04-14 | 2021-11-26 | 赛维Ldk太阳能高科技(新余)有限公司 | Ingot casting single crystal furnace and preparation method of ingot casting single crystal silicon |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20100300153A1 (en) | Downward Firing Oxygen-Fuel Burners for Glass Melting Furnaces | |
| CN103590103B (en) | A kind of polycrystalline silicon ingot or purifying furnace argon gas flow guide system and method for river diversion thereof | |
| CN113106546B (en) | Guide cylinder for single crystal furnace, single crystal furnace and machining method of guide cylinder | |
| CN205711031U (en) | A kind of single crystal growing furnace | |
| CN210826446U (en) | A guiding device and crystalline silicon ingot furnace for crystalline silicon ingot furnace | |
| WO2023185536A1 (en) | Draft tube for pulling of single crystals and single crystal furnace provided with same | |
| CN204939657U (en) | A kind of ingot furnace airflow guiding device | |
| CN201971920U (en) | Device capable of reducing carbon content for polysilicon casting | |
| CN203187552U (en) | C region cooling structure of float glass annealing kiln | |
| CN211199471U (en) | G6 polycrystal ingot furnace | |
| CN202558958U (en) | Novel gas diversion control device | |
| CN209816330U (en) | Inner guide cylinder and guide cylinder assembly | |
| CN101319351B (en) | Monocrystalline growing furnace | |
| CN216585312U (en) | Guide cylinder for reducing silicon oxygen content of czochralski single crystal | |
| CN106894082A (en) | Monocrystalline silicon growing furnace | |
| CN109183148A (en) | A kind of ingot furnace | |
| CN210596321U (en) | Silicon core square ingot casting device | |
| CN101319352B (en) | Vertical pulling type single crystal growth furnace | |
| CN210886316U (en) | Polysilicon ingot casting thermal field heat insulation cage | |
| CN209584420U (en) | A kind of polycrystalline furnace contains gas guiding device | |
| CN108950681B (en) | Graphite chassis of polycrystal ingot furnace and polycrystal ingot furnace | |
| CN114574943B (en) | Single crystal furnace and single crystal | |
| CN217973492U (en) | Single crystal furnace capable of increasing argon flow rate and saving argon | |
| CN202558967U (en) | Ingot furnace provided with novel cover plate and used for preparing high-quality polycrystalline silicon with low carbon and low oxygen | |
| CN221371351U (en) | Single crystal furnace water cooling screen and single crystal furnace |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200623 |