CN209816330U - Inner guide cylinder and guide cylinder assembly - Google Patents
Inner guide cylinder and guide cylinder assembly Download PDFInfo
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- CN209816330U CN209816330U CN201920357969.2U CN201920357969U CN209816330U CN 209816330 U CN209816330 U CN 209816330U CN 201920357969 U CN201920357969 U CN 201920357969U CN 209816330 U CN209816330 U CN 209816330U
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Abstract
The application discloses interior draft tube and draft tube subassembly, interior draft tube has the crystal pulling passageway that is located the center, interior draft tube includes the first water conservancy diversion section of quartz material and the second water conservancy diversion section of graphite material, first water conservancy diversion section with the second water conservancy diversion section is annular column, the one end of first water conservancy diversion section is close to crystal growth liquid level setting, the other end of first water conservancy diversion section with second water conservancy diversion section coaxial coupling. The method can obtain larger temperature gradient, improve the crystal pulling efficiency, avoid the pollution to the silicon melt, ensure the quality of the single crystal, simultaneously avoid causing too great difficulty to the processing of the inner guide cylinder and reduce the production cost.
Description
Technical Field
The utility model relates to a technical field is made to monocrystalline silicon, concretely relates to interior draft tube and draft tube subassembly.
Background
With the continuous production expansion of photovoltaic enterprises, low-cost and high-quality monocrystalline silicon wafers become core competitiveness. The main factors influencing the production cost are the drawing speed and the production quality of the silicon rod, the main influencing factor of the drawing speed is the temperature gradient of the thermal field, and the main influencing factor of the production quality is the content of oxygen, carbon and metal impurities in the silicon rod. The Czochralski silicon single crystal growth furnace is a main device for preparing silicon single crystal materials, the stable growth of the silicon single crystal is ensured by the internal thermal field, and the internal guide cylinder forms a part of the thermal field and plays an important role in the growth process of the silicon single crystal. However, the traditional inner guide cylinder is made of high-purity graphite, the temperature gradient is small, and the corresponding pulling speed cannot meet the requirements of the modern process. Moreover, the draft tube made of graphite contains metal impurities, and the metal impurities are volatilized at high temperature and blown to the liquid level of crystal growth by argon gas to enter silicon melt, so that the service life of a minority carrier of a single crystal is short, and a single crystal product needs to be returned to a furnace or even scrapped when the minority carrier is serious, and the production cost is high.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned drawbacks and deficiencies of the prior art, it is desirable to provide an inner guide shell and a guide shell assembly.
In order to overcome the deficiency of the prior art, the utility model provides a technical scheme is:
in a first aspect, the utility model provides an interior draft tube, its special character lies in, interior draft tube has the crystal pulling passageway that is located the center, interior draft tube includes the first water conservancy diversion section of quartz material and the second water conservancy diversion section of graphite material, first water conservancy diversion section with second water conservancy diversion section is the annular, the one end of first water conservancy diversion section is close to crystal growth liquid level setting, the other end of first water conservancy diversion section with second water conservancy diversion section coaxial coupling.
Furthermore, one end of the first flow guide section, which is close to the liquid level of the crystal growth, is a first end, one end of the first flow guide section, which is connected with the second flow guide section, is a second end, and the sectional area of the first end along the direction vertical to the crystal pulling channel is smaller than that of the second end along the direction vertical to the crystal pulling channel; the second flow guide section is of an equal-diameter structure, and the second end of the first flow guide section is connected with any one end of the second flow guide section.
Further, first water conservancy diversion section is including the first linkage segment, second linkage segment and the third linkage segment that connect gradually, first linkage segment and second linkage segment are the flaring structure, the third linkage segment is the constant diameter structure, the tip of first linkage segment is close to crystal growth liquid level sets up, the main aspects of first linkage segment with the tip of second linkage segment is connected, the main aspects of second linkage segment with the one end of third linkage segment is connected, the third linkage segment other end with the second water conservancy diversion section is connected.
Furthermore, the included angle between the side wall of the third connecting section and the axial direction of the crystal pulling channel is 0 degree, the included angle between the side wall of the second connecting section and the axial direction of the crystal pulling channel is 10-20 degrees, and the included angle between the side wall of the first connecting section and the axial direction of the crystal pulling channel is 30-75 degrees.
Further, the side wall of the first guide section comprises a transparent layer close to the crystal pulling channel and a bubble layer far away from the crystal pulling channel.
Further, the first flow guide section is detachably connected with the second flow guide section.
In a second aspect, the present invention provides a draft tube assembly, which is characterized in that it comprises an outer draft tube and an upper inner draft tube.
Furthermore, the lower end of the first flow guide section of the inner flow guide cylinder is provided with an annular bayonet, the lower end of the outer flow guide cylinder is provided with an inclined hole, the upper end of the inclined hole is provided with an annular boss corresponding to the annular bayonet, and the annular boss is clamped in the annular bayonet.
Furthermore, the annular boss part is accommodated in the annular bayonet, an annular gap is formed between the lower end of the annular bayonet and the bottom of the outer guide cylinder, and the annular gap is used for filling heat-insulating materials.
Further, outer draft tube top is equipped with first flange, the top of first flange is equipped with a plurality of first connecting holes, interior draft tube top is equipped with the second flange, the top of second flange is equipped with a plurality of second connecting holes, first connecting hole with the second connecting hole corresponds coaxial setting.
Compared with the prior art, the beneficial effects of the utility model are that:
the utility model discloses an interior draft tube has the crystal pulling passageway that is located the center, interior draft tube includes the first water conservancy diversion section of quartz material and the second water conservancy diversion section of graphite material, first water conservancy diversion section with second water conservancy diversion section is the annular, the one end of first water conservancy diversion section is close to crystal growth liquid level setting, the other end of first water conservancy diversion section with second water conservancy diversion section coaxial coupling. The method can obtain larger temperature gradient, improve the crystal pulling efficiency, avoid the pollution to the silicon melt, ensure the quality of the single crystal, simultaneously avoid causing too great difficulty to the processing of the inner guide cylinder and reduce the production cost.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
fig. 1 is a schematic structural view of an inner guide cylinder according to an embodiment of the present invention;
fig. 2 is an exploded view of an inner baffle according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a guide cylinder assembly according to an embodiment of the present invention;
fig. 4 is a partially enlarged view of a portion a in fig. 3.
In the figure: 1-inner guide cylinder, 2-outer guide cylinder, 3-annular gap, 11-first guide section, 12-second guide section, 13-first flange, 21-inclined hole, 22-second flange, 23-annular boss, 111-second connecting section, 112-third connecting section, 113-first connecting section and 114-annular bayonet.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and are not limiting of the invention. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
As mentioned in the background art, the conventional inner guide shell is made of high-purity graphite, the temperature gradient is small, and the corresponding pulling speed cannot meet the requirements of the modern process. Moreover, the guide cylinder made of graphite contains metal impurities, and the metal impurities are volatilized at high temperature and blown into silicon melt by argon, so that the service life of a single crystal minority carrier is short, and a single crystal product needs to be returned to a furnace or even scrapped when the single crystal product is serious, and the production cost is high.
Referring to fig. 1 and 2, the utility model provides an interior draft tube 1, interior draft tube 1 has the crystal pulling passageway that is located the center, interior draft tube 1 includes the first water conservancy diversion section 11 of quartz material and the second water conservancy diversion section 12 of graphite material, first water conservancy diversion section 11 with second water conservancy diversion section 12 is the annular, the one end of first water conservancy diversion section 11 is close to crystal growth liquid level setting, the other end of first water conservancy diversion section 11 with second water conservancy diversion section 12 coaxial coupling.
First water conservancy diversion section 11 adopts quartz material, and at first quartz has good heat insulating ability, and inside the heat of heat preservation was difficult to be transmitted to first water conservancy diversion section 11, the temperature of interior draft tube 1 lower part was lower, and the vertical difference in temperature that leads to interior draft tube 1 and crystal growth liquid level was great to make temperature gradient great, and the pulling speed is favorable to more greatly to vertical temperature ladder in the crystal pulling process. According to the temperature simulation data in the single crystal furnace, the lower edge temperature of the heat shield inner container is about 1050 ℃ and is far less than 1420 ℃. Secondly, the purity of the quartz material is high, the impurity content is low, impurities can be reduced from entering the single crystal silicon rod, and the production quality of the single crystal silicon rod is ensured.
As an implementation manner, the first flow guiding section 11 is detachably connected with the second flow guiding section 12. Preferably, the first flow guiding section 11 is connected with the second flow guiding section 12 in a snap-fit manner. On one hand, the first guide section 11 and the second guide section 12 are tightly combined and cannot swing along the radial direction; on the other hand, the inner surface of the inner guide cylinder 1 formed by splicing is smooth, so that the airflow can be prevented from whirling.
As an implementation mode, one end of the first flow guide section 11 close to the crystal growth liquid level is a first end, and one end connected with the second flow guide section 12 is a second end, wherein the sectional area of the first end in the direction vertical to the crystal pulling channel is smaller than that of the second end in the direction vertical to the crystal pulling channel; the second flow guide section 12 is of an equal-diameter structure, and the second end of the first flow guide section 11 is connected with any end of the second flow guide section 12.
As an implementation manner, the first flow guiding section 11 includes a first connecting section 113, a second connecting section 111, and a third connecting section 112 connected in sequence, the first connecting section 113 and the second connecting section 111 are in a flaring structure, the third connecting section 112 is in an equal-diameter structure, a small end of the first connecting section 113 is close to the crystal growth liquid level, a large end of the first connecting section 113 is connected with a small end of the second connecting section 111, a large end of the second connecting section 111 is connected with one end of the third connecting section 112, and the other end of the third connecting section 112 is connected with the second flow guiding section 12.
As an implementation mode, the included angle between the side wall of the third connecting section 112 and the axial direction of the crystal pulling channel is always 0 degree, the included angle between the side wall of the second connecting section 111 and the axial direction of the crystal pulling channel is 10-20 degrees, and the included angle between the side wall of the first connecting section 113 and the axial direction of the crystal pulling channel is 30-75 degrees. The first flow guide section 11 can accelerate the flow velocity of air flow above the liquid level of silicon, and is favorable for taking away latent heat of crystallization above the liquid level.
As an embodiment, the first connecting section 113 and the second connecting section 111 have a circular truncated cone shape, and the third connecting section 112 has a cylindrical shape. The included angle of the generatrix of the two round tables corresponding to the first connecting section 113 and the second connecting section 111 is 10-65 degrees, and the included angle of the generatrix of the round column corresponding to the third connecting section 112 and the generatrix of the round table corresponding to the second connecting section 111 is 10-20 degrees. The sectional areas of the second connecting section 111 and the first connecting section 113 perpendicular to the direction of the crystal pulling channel are continuously reduced, the flow rate of the gas entering from the third connecting section 112 is continuously accelerated when the gas flows to the second connecting section 111 and the first connecting section 113, and the latent heat of crystallization above the liquid level of the crystal growth can be quickly taken away.
As an implementation mode, the side wall of the first diversion section 11 is of a multilayer structure and comprises a transparent layer close to the crystal pulling channel and a bubble layer far away from the crystal pulling channel. The transparent layer has good reflection performance, and can reflect heat generated by radiation in the crystal pulling process and transmit the heat out of the upper end of the inner draft tube 1 in a convection mode; the bubble layer has good heat-insulating property, and the good heat-insulating property can prevent external heat from being conducted into the inner guide shell 1, reduce the temperature of the lower part of the inner guide shell 1 and improve the longitudinal temperature gradient of the thermal field.
Referring to fig. 3 and 4, the utility model also provides a draft tube assembly, including outer draft tube 2 and higher authority interior draft tube 1, the lower extreme of the first water conservancy diversion section 11 of interior draft tube 1 is equipped with annular bayonet 114, the lower extreme of outer draft tube 2 is equipped with inclined hole 21, inclined hole 21 upper end be equipped with the annular boss 23 that annular bayonet 114 position corresponds, annular boss 23 card is in annular bayonet 114.
As an implementation mode, the annular boss 23 is partially accommodated in the annular bayonet 114, an annular gap 3 is formed between the lower end of the annular bayonet 114 and the bottom of the outer draft tube 2, the annular gap 3 is used for filling heat insulation materials, a layer of heat insulation felt can be added in the annular gap 3, heat in the furnace body can be slowed down to be transferred to the inner draft tube 1, the temperature of the lower part of the inner draft tube 1 is further reduced, and the longitudinal temperature gradient of the thermal field is improved.
It should be noted that, the top end of the outer draft tube 2 is provided with a first flange 13, the top end of the first flange 13 is provided with a plurality of first connection holes, the top end of the inner draft tube 1 is provided with a second flange 22, the top end of the second flange 22 is provided with a plurality of second connection holes, and the first connection holes and the second connection holes are correspondingly and coaxially arranged. When the inner guide cylinder 2 is installed, the pin shaft or the bolt penetrates through the first connecting hole and the second connecting hole to connect the inner guide cylinder 1 and the outer guide cylinder 2.
The above description is only a preferred embodiment of the application and is illustrative of the principles of the technology employed. It will be understood by those skilled in the art that the scope of the present invention is not limited to the specific combination of the above-mentioned features, but also covers other embodiments formed by any combination of the above-mentioned features or their equivalents without departing from the spirit of the present invention. For example, the above features may be replaced with (but not limited to) features having similar functions disclosed in the present application.
Claims (10)
1. The utility model provides an interior draft tube, its characterized in that, interior draft tube has the crystal pulling passageway that is located the center, interior draft tube includes the first water conservancy diversion section of quartz material and the second water conservancy diversion section of graphite material, first water conservancy diversion section with the second water conservancy diversion section is the annular, the one end of first water conservancy diversion section is close to crystal growth liquid level setting, the other end of first water conservancy diversion section with second water conservancy diversion section coaxial coupling.
2. The inner baffle of claim 1, wherein an end of the first flow guide section adjacent to the crystal growth liquid level is a first end, an end connected to the second flow guide section is a second end, and a cross-sectional area of the first end in a direction perpendicular to the crystal pulling channel is smaller than a cross-sectional area of the second end in a direction perpendicular to the crystal pulling channel; the second flow guide section is of an equal-diameter structure, and the second end of the first flow guide section is connected with any one end of the second flow guide section.
3. The inner guide shell according to claim 2, wherein the first guide section comprises a first connecting section, a second connecting section and a third connecting section which are connected in sequence, the first connecting section and the second connecting section are of flaring structures, the third connecting section is of an equal-diameter structure, a small end of the first connecting section is arranged close to the crystal growth liquid level, a large end of the first connecting section is connected with a small end of the second connecting section, a large end of the second connecting section is connected with one end of the third connecting section, and the other end of the third connecting section is connected with the second guide section.
4. The inner guide shell according to claim 3, wherein an included angle between the side wall of the third connecting section and the axial direction of the crystal pulling channel is 0 °, an included angle between the side wall of the second connecting section and the axial direction of the crystal pulling channel is 10-20 °, and an included angle between the side wall of the first connecting section and the axial direction of the crystal pulling channel is 30-75 °.
5. The inner guide shell as claimed in claim 1, wherein the side wall of the first guide section includes a transparent layer adjacent the crystal pulling channel and a bubble layer distal from the crystal pulling channel.
6. The inner guide shell according to claim 1, wherein the first guide section is detachably connected to the second guide section.
7. A guide shell assembly comprising an outer guide shell and an inner guide shell as claimed in any one of claims 1 to 6.
8. The guide cylinder assembly as claimed in claim 7, wherein the lower end of the first guide section of the inner guide cylinder is provided with an annular bayonet, the lower end of the outer guide cylinder is provided with an inclined hole, the upper end of the inclined hole is provided with an annular boss corresponding to the annular bayonet, and the annular boss is clamped in the annular bayonet.
9. The guide shell assembly of claim 8, wherein said annular boss portion is received within said annular bayonet, a lower end of said annular bayonet forming an annular gap with said outer guide shell bottom, said annular gap being filled with insulation.
10. The guide cylinder assembly as claimed in any one of claims 7 to 9, wherein the outer guide cylinder has a first flange at a top end thereof, the first flange has a plurality of first connection holes at a top end thereof, the inner guide cylinder has a second flange at a top end thereof, the second flange has a plurality of second connection holes at a top end thereof, and the first connection holes and the second connection holes are coaxially arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920357969.2U CN209816330U (en) | 2019-03-20 | 2019-03-20 | Inner guide cylinder and guide cylinder assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920357969.2U CN209816330U (en) | 2019-03-20 | 2019-03-20 | Inner guide cylinder and guide cylinder assembly |
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| Publication Number | Publication Date |
|---|---|
| CN209816330U true CN209816330U (en) | 2019-12-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201920357969.2U Active CN209816330U (en) | 2019-03-20 | 2019-03-20 | Inner guide cylinder and guide cylinder assembly |
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| CN (1) | CN209816330U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022199339A1 (en) * | 2021-03-25 | 2022-09-29 | 徐州鑫晶半导体科技有限公司 | Flow guide for monocrystal furnace, monocrystal furnace, and method for processing flow guide |
-
2019
- 2019-03-20 CN CN201920357969.2U patent/CN209816330U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022199339A1 (en) * | 2021-03-25 | 2022-09-29 | 徐州鑫晶半导体科技有限公司 | Flow guide for monocrystal furnace, monocrystal furnace, and method for processing flow guide |
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