CN217769469U - MOS manages overvoltage crowbar - Google Patents
MOS manages overvoltage crowbar Download PDFInfo
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- CN217769469U CN217769469U CN202221725713.0U CN202221725713U CN217769469U CN 217769469 U CN217769469 U CN 217769469U CN 202221725713 U CN202221725713 U CN 202221725713U CN 217769469 U CN217769469 U CN 217769469U
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Abstract
The utility model discloses a MOS pipe overvoltage crowbar, including MOS pipe Q3, triode Q1, triode Q2, resistance R10, resistance R11, resistance R12, resistance R13, the both ends of resistance R10 are connected with MOS pipe Q3's source electrode and drain electrode respectively, resistance R12's one end is connected with VCC end, the other end is connected with resistance R13's one end, triode Q2's base is connected with resistance R12, resistance R11's one end is connected with resistance R12, the other end is connected with triode Q1's base, MOS pipe Q3's source electrode is connected with VCC end, MOS pipe Q3's grid is connected with triode Q1's collecting electrode; a voltage sampling unit is formed by the resistor R12 and the resistor R13, when the sampling voltage value of the voltage sampling unit reaches a second preset threshold value, the MOS tube Q3 is also in a cut-off state, power is supplied to the load RL by the cut-off, and the rear-end circuit component is not damaged in a high-voltage state.
Description
Technical Field
The utility model relates to an overvoltage protection's technical field specifically is a MOS manages overvoltage crowbar.
Background
In the electrical field, in general, some circuits are designed to prevent unstable factors from affecting the normal operation of the circuit, because of the unstable factors existing in the power circuit. The working voltage of the current components is generally within 10V, but the external power supply voltage is far beyond the normal working voltage in many times, so that the whole circuit or load is damaged.
SUMMERY OF THE UTILITY MODEL
Therefore, it is necessary to provide a MOS transistor overvoltage protection circuit with simple structure and good safety.
The utility model provides a MOS pipe overvoltage crowbar, including MOS pipe Q3, triode Q1, triode Q2, resistance R10, resistance R11, resistance R12, resistance R13, resistance R10's both ends are connected with MOS pipe Q3's source electrode and drain electrode respectively, resistance R12's one end is connected with VCC end, the other end is connected with resistance R13's one end, triode Q2's base is connected with the common junction point between resistance R12 and the resistance R13, resistance R11's one end is connected with the common junction point between resistance R12 and the VCC end, the other end is connected with triode Q1's base, MOS pipe Q3's source electrode and VCC end are connected, MOS pipe Q3's grid is connected with triode Q1's collecting electrode, MOS pipe Q3's drain electrode and load RL are connected.
In one embodiment, the MOS transistor overvoltage protection circuit further includes a resistor R8 and a capacitor C9, one end of the capacitor C9 is connected to the source of the MOS transistor Q3, and the other end is connected to one end of the resistor R8.
In one embodiment, the MOS transistor overvoltage protection circuit further includes a resistor R9, one end of the resistor R9 is connected to one end of the resistor R11, and the other end of the resistor R9 is connected to the base of the transistor Q1.
In one embodiment, the transistor Q1 and the transistor Q2 are NPN transistors.
In one embodiment, the transistors Q1 and Q2 have a chip model number NSS60201LT1G.
In one embodiment, the MOS transistor Q3 has a chip model number HS2328.
Above-mentioned MOS pipe overvoltage crowbar, formed voltage sampling unit through resistance R12 and resistance R13, when the input voltage of VCC end is greater than first predetermined threshold value, voltage sampling unit's sample voltage value reaches the second and predetermines the threshold value, can make triode Q2 switch on, thereby make triode Q1 be in the off-state, MOS pipe Q3 also is in the off-state, the disconnection gives load RL power supply, guarantee can not damage rear end circuit components and parts at high-voltage state, and circuit structure is simple, can guarantee not to damage components and parts at high-voltage environment, voltage recovery can normally work after normal, the suitability is strong.
Drawings
Fig. 1 is a circuit diagram of an MOS transistor overvoltage protection circuit according to an embodiment of the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, as those skilled in the art will be able to make similar modifications without departing from the spirit and scope of the present invention.
It will be understood that when an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly connected" to another element, there are no intervening elements present.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
As shown in fig. 1, an MOS transistor overvoltage protection circuit includes an MOS transistor Q3, an audion Q1, an audion Q2, a resistor R10, a resistor R11, a resistor R12, and a resistor R13, where two ends of the resistor R10 are respectively connected with a source electrode and a drain electrode of the MOS transistor Q3, one end of the resistor R12 is connected with a VCC end, and the other end is connected with one end of the resistor R13, a base of the audion Q2 is connected with a common connection point between the resistor R12 and the resistor R13, one end of the resistor R11 is connected with a common connection point between the resistor R12 and the VCC end, and the other end is connected with a base of the audion Q1, a source electrode of the MOS transistor Q3 is connected with the VCC end, a gate of the MOS transistor Q3 is connected with a collector of the audion Q1, and a drain electrode of the MOS transistor Q3 is connected with a load RL.
In one embodiment, the MOS transistor overvoltage protection circuit further includes a resistor R8 and a capacitor C9, one end of the capacitor C9 is connected to the source of the MOS transistor Q3, and the other end is connected to one end of the resistor R8.
In one embodiment, the MOS transistor overvoltage protection circuit further includes a resistor R9, one end of the resistor R9 is connected to one end of the resistor R11, and the other end of the resistor R9 is connected to the base of the transistor Q1.
In one embodiment, the transistor Q1 and the transistor Q2 are NPN transistors.
In one embodiment, the transistors Q1 and Q2 have a chip model number NSS60201LT1G.
In one embodiment, the MOS transistor Q3 has a chip model number HS2328.
The resistor R12 and the resistor R13 form a voltage sampling unit.
When the input voltage of VCC end is 5V, resistance R12 and resistance R13 sampling voltage are 0.5V, triode Q2 base voltage can not reach the conducting voltage, triode Q2 is in the off state, triode Q1 base is drawn to the high level through resistance R11, triode Q1 switches on, triode Q1's collector is the low level, draw MOS pipe Q3 grid to the low level, MOS pipe Q3 is the conducting state, normally supplies power for load RL. When the input voltage of VCC end is greater than 7V, resistance R12 and resistance R13 sampling voltage are 0.7V, triode Q2 base voltage reaches the break-over voltage, triode Q2 is in the conducting state, triode Q2 collecting electrode draws triode Q1's base to the low level, makes triode Q1 be in the off state, triode Q1 collecting electrode draws MOS pipe Q3 grid to the high level through resistance R10, makes MOS pipe Q3 be in the end, the disconnection gives load RL power supply.
Like this, MOS pipe overvoltage crowbar, voltage sampling unit has been formed through resistance R12 and resistance R13, when the input voltage of VCC end is greater than first predetermined threshold value, voltage sampling unit's sample voltage value reaches the second and predetermines the threshold value, can make triode Q2 switch on, thereby make triode Q1 be in the off-state, MOS pipe Q3 also is in the off-state, the disconnection gives load RL power supply, guarantee can not damage rear end circuit components and parts at high-voltage state, and circuit structure is simple, can guarantee not damage components and parts at high-voltage environment, voltage recovery can normally work after normal, the suitability is strong.
Further, the resistor R8 and the capacitor C9 realize a soft start switching function, so that the power supply is slowly turned on to limit surge current when the power supply is started, and the MOS transistor Q3 is effectively protected from being damaged.
Further, the resistor R9 is a current-limiting resistor to prevent the transistor Q1 from being burned out due to excessive current, so as to ensure that the transistor Q1 can normally operate.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (6)
1. The utility model provides a MOS pipe overvoltage crowbar which characterized in that: including MOS pipe Q3, triode Q1, triode Q2, resistance R10, resistance R11, resistance R12, resistance R13, resistance R10's both ends are connected with MOS pipe Q3's source electrode and drain electrode respectively, resistance R12's one end is connected with VCC end, the other end is connected with resistance R13's one end, triode Q2's base is connected with the common junction point between resistance R12 and the resistance R13, resistance R11's one end is connected with the common junction point between resistance R12 and the VCC end, the other end is connected with triode Q1's base, MOS pipe Q3's source electrode and VCC end are connected, MOS pipe Q3's grid is connected with triode Q1's collecting electrode, MOS pipe Q3's drain electrode and load RL are connected.
2. The MOS tube overvoltage protection circuit of claim 1, wherein: the MOS tube overvoltage protection circuit further comprises a resistor R8 and a capacitor C9, one end of the capacitor C9 is connected with the source electrode of the MOS tube Q3, and the other end of the capacitor C9 is connected with one end of the resistor R8.
3. The MOS tube overvoltage protection circuit of claim 1, wherein: the MOS tube overvoltage protection circuit further comprises a resistor R9, one end of the resistor R9 is connected with one end of the resistor R11, and the other end of the resistor R9 is connected with the base electrode of the triode Q1.
4. The MOS tube overvoltage protection circuit of claim 1, wherein: the triode Q1 and the triode Q2 are NPN type triodes.
5. The MOS tube overvoltage protection circuit of claim 4, wherein: the model of the chip of the triode Q1 and the chip of the triode Q2 are NSS60201LT1G.
6. The MOS tube overvoltage protection circuit of claim 1, wherein: the chip model of the MOS tube Q3 is HS2328.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221725713.0U CN217769469U (en) | 2022-07-06 | 2022-07-06 | MOS manages overvoltage crowbar |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221725713.0U CN217769469U (en) | 2022-07-06 | 2022-07-06 | MOS manages overvoltage crowbar |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217769469U true CN217769469U (en) | 2022-11-08 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221725713.0U Active CN217769469U (en) | 2022-07-06 | 2022-07-06 | MOS manages overvoltage crowbar |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217769469U (en) |
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2022
- 2022-07-06 CN CN202221725713.0U patent/CN217769469U/en active Active
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