CN217606816U - Chip packaging structure for increasing heat dissipation and improving electromagnetic shielding - Google Patents
Chip packaging structure for increasing heat dissipation and improving electromagnetic shielding Download PDFInfo
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- CN217606816U CN217606816U CN202221608099.XU CN202221608099U CN217606816U CN 217606816 U CN217606816 U CN 217606816U CN 202221608099 U CN202221608099 U CN 202221608099U CN 217606816 U CN217606816 U CN 217606816U
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- plastic
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- base plate
- heat dissipation
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 37
- 238000004806 packaging method and process Methods 0.000 title claims abstract description 14
- 239000000463 material Substances 0.000 claims abstract description 24
- 238000003466 welding Methods 0.000 claims abstract description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 6
- BIJOYKCOMBZXAE-UHFFFAOYSA-N chromium iron nickel Chemical compound [Cr].[Fe].[Ni] BIJOYKCOMBZXAE-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 238000000465 moulding Methods 0.000 claims description 5
- 238000000926 separation method Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 238000013461 design Methods 0.000 abstract description 5
- 238000005538 encapsulation Methods 0.000 abstract description 3
- 238000012536 packaging technology Methods 0.000 abstract description 3
- 238000007747 plating Methods 0.000 abstract description 3
- 230000015572 biosynthetic process Effects 0.000 abstract description 2
- 239000000758 substrate Substances 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 230000002349 favourable effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The utility model discloses an increase heat dissipation and promote electromagnetic shield's chip package structure, adorn each device on the base plate including base plate and subsides, the base plate is equipped with the base plate shielding layer, and the surface welding end subsides of base plate shielding layer are equipped with plastic-sealed body shielding layer, and plastic-sealed body shielding layer is located between each device, and the surface of base plate is equipped with the plastic-sealed bed of material, and the device that needs the heat dissipation spills the plastic-sealed bed of material, and the surface on plastic-sealed bed of material has plated the plastic-sealed body surface shielding layer of whole strip. The utility model discloses after the subsides dress device on the base plate that the design has the base plate shielding layer, paste dress plastic-sealed body shielding layer on the base plate shielding layer, then pack plastic-sealed material, and spill and need the heat dissipation device, increase plastic-sealed body surface shielding layer at last, its packaging technology simple structure, the encapsulation is efficient, this packaging structure has ensured the heat dissipation demand, the thickness of product has been reduced simultaneously, electromagnetic interference through plastic-sealed body shielding layer formation between each device blocks, and adopt the whole plastic-sealed body surface shielding layer of plating, the electromagnetic shield effect has further been promoted.
Description
Technical Field
The utility model relates to a semiconductor package technical field, more specifically relate to an increase heat dissipation and promote electromagnetic shield's chip package structure.
Background
In recent years, with the rapid development of chip technology, the application of chips in high-current and high-power electrical appliances is becoming more extensive.
With the function of the chip becoming more and more complex, the devices in the same chip packaging structure become more and more, and the electromagnetic shielding interference between the devices becomes more and more severe. At present, in the existing single-chip electromagnetic shielding technology, a proper electromagnetic shielding metal shell made of metal is generally added outside a packaging body, and the thicker the electromagnetic shielding metal shell is, the better the electromagnetic shielding effect is. However, the electromagnetic shielding metal shell exists as an accessory, which causes the volume of the package body to increase, and the requirement of package miniaturization cannot be met, and the existing electromagnetic shielding effect needs to be further improved.
In addition, because the number of devices in the same chip packaging structure is increasing, and the heat generated in the working process is also increasing, the heat dissipation requirement on the packaging structure is increasing, at present, heat dissipation is basically performed by means of a substrate, a heat dissipation cover is covered outside a chip, and heat conduction glue is arranged between the chip and the heat dissipation cover for heat dissipation, but the thickness of chip packaging is increased, and the process is complex.
SUMMERY OF THE UTILITY MODEL
In order to solve the problem, the utility model provides an increase heat dissipation and promote chip package structure of electromagnetic shield for local electromagnetic shield, compromises high radiating characteristic simultaneously, realizes the whole piece electromagnetic shield, is favorable to the thickness reduction of product, realizes the miniaturization of product.
According to an aspect of the utility model provides an increase heat dissipation and promote chip package structure of electromagnetic shield, including the base plate and paste the device that a plurality of separation on the base plate set up, the base plate is equipped with the base plate shielding layer, and the surface welding end subsides of base plate shielding layer are equipped with plastic-sealed body shielding layer, and plastic-sealed body shielding layer is located between each device, and the surface of base plate is equipped with the plastic-sealed material layer, and the device that needs the heat dissipation spills the plastic-sealed material layer, and the plastic-sealed body surface shielding layer of whole strip has been plated on the surface of plastic-sealed material layer.
In some embodiments, the plastic package shielding layer is vertically disposed and extends through the entire plastic package layer.
In some embodiments, the device includes a flip chip and a front-mounted chip, and at least one plastic package shielding layer is disposed between the front-mounted chip and the flip chip.
In some embodiments, the surface of the flip chip to be heat dissipated leaks out of the plastic encapsulant layer.
In some embodiments, the surface of the flip chip requiring heat dissipation leaks when the molding compound layer is formed, or the surface of the flip chip requiring heat dissipation leaks after the molding compound layer is formed and ground.
In some embodiments, the plastic package shielding layer is a copper layer.
In some embodiments, the plastic package surface shielding layer is a three-layer structure including an iron-chromium-nickel alloy layer, a copper layer, and an iron-chromium-nickel alloy layer disposed in sequence.
Compared with the prior art, the beneficial effects of the utility model are that: the utility model provides a chip packaging structure, paste dress flip chip on the base plate that the design has the base plate shielding layer, just adorn chip and bonding wire after, increase technology, paste dress plastic-sealed body shielding layer at the surface bonding end of base plate shielding layer, then pack the plastic-sealed material and form the plastic-sealed bed of material, can directly expose when filling the plastic-sealed bed of material and need radiating flip chip, perhaps spill the radiating flip chip of needs through the mode of back grinding, increase plastic-sealed body surface shielding layer at last, need radiating flip chip to spill, the heat dissipation demand has been ensured, the thickness of product has been reduced simultaneously, electromagnetic interference through between each device of plastic-sealed body shielding layer formation blocks, and adopt the whole plastic-sealed body surface shielding layer of plating, combine the base plate shielding layer, form the shielding space jointly, the electromagnetic shield effect has further been promoted, and the utility model provides a chip packaging structure, its packaging technology simple structure, greatly improved encapsulation efficiency, base plate surface design demand space is little, be favorable to the thickness reduction of product.
Drawings
Fig. 1 is a schematic structural diagram of an embodiment of a chip packaging structure for increasing heat dissipation and improving electromagnetic shielding according to the present invention;
FIG. 2 is a schematic diagram of a structure after a flip chip and a front chip are mounted on a substrate and wires are bonded, and a plastic package shielding layer is mounted on a substrate shielding layer;
fig. 3 is a schematic view of the structure filling the plastic layer and leaking out of the flip chip.
Detailed Description
The present invention will be further described with reference to the following embodiments.
As shown in fig. 1, an embodiment's a chip package structure that increases heat dissipation and promotes electromagnetic shield, it includes base plate 1, and the device that a plurality of separation on base plate 1 set up is adorned in the subsides, a plurality of base plate shielding layer 11 has in the base plate 1, each device is surrounded in the distribution of base plate shielding layer 11, the surface welding end subsides of base plate shielding layer 11 are equipped with plastic-sealed body shielding layer 2, plastic-sealed body shielding layer 2 distributes between each device, base plate 1's surface packing has plastic-sealed material layer 6, need radiating device to spill plastic-sealed material layer 6, plastic-sealed body surface shielding layer 7 of whole strip has been plated on plastic-sealed material layer 6's surface.
The plastic package shielding layer 2 is vertically arranged, and the plastic package shielding layer 2 penetrates through the whole plastic package material layer 6. The plastic package shielding layer 2 is a copper layer.
The device comprises a flip chip 3 and a face-up chip 4. The front chip 4 is connected to the substrate 1 by bonding wires 5. At least one plastic package body shielding layer 2 is arranged between the front chip 4 and the flip chip 3, and two or more plastic package body shielding layers 2 can be arranged as required.
The plastic package layer 6 is exposed from the surface of the flip chip 3 to be heat-dissipated. There are two ways to leak the flip chip 3 requiring heat dissipation: firstly, the surface of the flip chip 3 needing heat dissipation leaks out when the plastic packaging material layer 6 is formed; secondly, after the plastic package material layer 6 is formed, the surface of the flip chip 3 which needs to dissipate heat is leaked by grinding.
The plastic package body surface shielding layer 7 is plated on the surface of the plastic package material layer 6, the plastic package body surface shielding layer 7 can adopt a three-layer structure, and the three-layer structure sequentially comprises an iron-chromium-nickel alloy layer, a copper layer and an iron-chromium-nickel alloy layer.
With reference to fig. 1 to 3, a packaging process of the chip packaging structure with increased heat dissipation and improved electromagnetic shielding in this embodiment is specifically described, which includes the following steps:
the method comprises the following steps: a substrate shielding layer 11 is manufactured on a substrate 1, the substrate shielding layer 11 needs to surround a performance chip, and the flip chip 3, the normal chip 4 and the bonding wire 5 are mounted in conventional operation. In this embodiment, the substrate 1 is provided with a ground terminal (not shown), and the substrate shielding layer 11 can be connected to the ground terminal, so as to achieve the effect of grounding.
Step two: the plastic package shielding layer 2 is attached to the surface bonding end position on the substrate shielding layer 11, as shown in fig. 2.
Step three: the surface of the substrate 1 is filled with a plastic package material, and the flip chip 3 requiring heat dissipation directly leaks out during plastic package, or after the plastic package material layer 6 is formed, the flip chip 3 requiring heat dissipation leaks out by adopting a grinding process, so that the heat dissipation capability of the chip is improved, as shown in fig. 3.
Step four: and (3) plating a plastic package body surface shielding layer 7 on the whole plastic package product.
Step five: by cutting, a single finished product is formed, as shown in fig. 1.
The utility model provides an increase heat dissipation and promote electromagnetic shield's chip package structure, paste dress flip chip 3 on the base plate 1 that the design has base plate shielding layer 11, just adorn chip 4 and bonding wire 5 after, increase technology, paste dress plastic-sealed body shielding layer 2 at base plate shielding layer 11's surface welding end, then pack the plastic-sealed material and form plastic-sealed material layer 6, can directly expose when filling plastic-sealed material layer 6 and need radiating flip chip 3, perhaps spill through the mode of back grinding and need radiating flip chip 3, increase plastic-sealed body surface shielding layer 7 at last. The utility model provides a chip packaging structure, its packaging technology simple structure has improved encapsulation efficiency greatly, and 1 surface design demand space of base plate is little, is favorable to the thickness reduction of product. And the flip chip 3 needing heat dissipation leaks out, thereby ensuring the heat dissipation requirement, reducing the thickness of the product and realizing the miniaturization of the product. Electromagnetic interference between the devices is blocked by the plastic package body shielding layer 2, the whole plastic package body surface shielding layer 7 is plated, and a shielding space is formed jointly by combining the substrate shielding layer 11, so that the electromagnetic shielding effect is further improved.
The foregoing is only illustrative of some embodiments of the present invention, and it should be noted that, for those skilled in the art, other variations and modifications can be made without departing from the inventive concept of the present invention, and these all fall into the scope of the present invention.
Claims (7)
1. The utility model provides an increase heat dissipation and promote electromagnetic shield's chip package structure, includes the device that the base plate and the subsides were adorned a plurality of separation on the base plate and set up, its characterized in that, the base plate is equipped with the base plate shielding layer, the surface welding end subsides of base plate shielding layer are equipped with plastic-sealed body shielding layer, plastic-sealed body shielding layer is located between each device, the surface of base plate is equipped with the plastic-sealed material layer, needs the heat dissipation the plastic-sealed material layer is spilt to the device, the plastic-sealed body surface shielding layer of whole strip has been plated on the surface of plastic-sealed material layer.
2. The chip package structure with increased heat dissipation and improved electromagnetic shielding of claim 1, wherein the shielding layer of the plastic package body is vertically disposed and penetrates through the entire plastic package layer.
3. The chip package structure with increased heat dissipation and improved electromagnetic shielding of claim 2, wherein the device comprises a flip chip and a front chip, and at least one plastic package shielding layer is disposed between the front chip and the flip chip.
4. The chip package structure with increased heat dissipation and improved electromagnetic shielding of claim 3, wherein a plastic layer is exposed from the surface of the flip chip to be heat-dissipated.
5. The chip package structure with increased heat dissipation and improved electromagnetic shielding as claimed in claim 4, wherein the molding compound layer leaks from the surface of the flip chip to be heat dissipated when formed, or the molding compound layer leaks from the surface of the flip chip to be heat dissipated after grinding.
6. The chip package structure with increased heat dissipation and improved electromagnetic shielding of claim 1, wherein the molding compound shielding layer is a copper layer.
7. The chip packaging structure with the functions of increasing heat dissipation and improving electromagnetic shielding of claim 1, wherein the plastic package surface shielding layer is a three-layer structure comprising an iron-chromium-nickel alloy layer, a copper layer and an iron-chromium-nickel alloy layer which are sequentially arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221608099.XU CN217606816U (en) | 2022-06-24 | 2022-06-24 | Chip packaging structure for increasing heat dissipation and improving electromagnetic shielding |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221608099.XU CN217606816U (en) | 2022-06-24 | 2022-06-24 | Chip packaging structure for increasing heat dissipation and improving electromagnetic shielding |
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| Publication Number | Publication Date |
|---|---|
| CN217606816U true CN217606816U (en) | 2022-10-18 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202221608099.XU Active CN217606816U (en) | 2022-06-24 | 2022-06-24 | Chip packaging structure for increasing heat dissipation and improving electromagnetic shielding |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115763436A (en) * | 2022-11-08 | 2023-03-07 | 北京唯捷创芯精测科技有限责任公司 | Routing type electromagnetic shielding structure, shielding method, circuit structure and electronic equipment |
-
2022
- 2022-06-24 CN CN202221608099.XU patent/CN217606816U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115763436A (en) * | 2022-11-08 | 2023-03-07 | 北京唯捷创芯精测科技有限责任公司 | Routing type electromagnetic shielding structure, shielding method, circuit structure and electronic equipment |
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 210000 No. 8, Linchun Road, Pukou Economic Development Zone, Pukou District, Nanjing, Jiangsu Province Patentee after: Jiangsu Xinde Semiconductor Technology Co.,Ltd. Country or region after: China Address before: 210000 No. 8, Linchun Road, Pukou Economic Development Zone, Pukou District, Nanjing, Jiangsu Province Patentee before: Jiangsu Xinde Semiconductor Technology Co.,Ltd. Country or region before: China |
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| CP03 | Change of name, title or address |