CN217588940U - Light crosstalk prevention Micro-LED chip structure and Micro-LED display device - Google Patents
Light crosstalk prevention Micro-LED chip structure and Micro-LED display device Download PDFInfo
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- CN217588940U CN217588940U CN202220242547.2U CN202220242547U CN217588940U CN 217588940 U CN217588940 U CN 217588940U CN 202220242547 U CN202220242547 U CN 202220242547U CN 217588940 U CN217588940 U CN 217588940U
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Abstract
The utility model provides a light crosstalk prevention Micro-LED chip structure and display device, this chip structure includes: a transparent substrate; the LED pixel units are arranged, and the N-type epitaxial layer of each LED pixel unit is provided with a mesa step; two adjacent LED pixel units are spaced by a first groove; an N electrode unit; the light absorption layer is arranged on the transparent substrate where the first groove is located and on the transparent substrate between the N electrode unit and the LED pixel unit adjacent to the N electrode unit; the light absorption layer is made of black conductive material; the metal conducting layers cover two sides and the side wall of the mesa step of the N-type epitaxial layer of each LED pixel unit and the light absorption layer, so that the N-type epitaxial layers of all the LED pixel units are electrically connected; the N-type epitaxial layers of all the LED pixel units are electrically connected to the N electrode unit; an insulating layer; the P electrode penetrates through the insulating layer and is arranged on the P type epitaxial layer of the LED pixel unit; and the N electrode penetrates through the insulating layer and is arranged on the N electrode unit.
Description
Technical Field
The utility model relates to a Micro-LED shows, especially relates to a prevent that light crosstalk Micro-LED chip architecture and Micro-LED display device.
Background
With the development of technology, LED chips tend to be miniaturized and integrated more and more, and Micro-LEDs are born with the advent and are widely concerned by people.
The Micro-LED Micro-display needs to realize full-color display, and the problem of light crosstalk between pixels needs to be solved urgently. The Micro-LED Micro-display has small pixel size and high pixel density on a unit area. Light emitted by the LED pixels is emitted through the substrate, and due to the wave guide effect of the substrate, the light emitted by the LED pixels can be transmitted to the surface of the substrate corresponding to the adjacent pixels, so that crosstalk of the light among the pixels is caused.
SUMMERY OF THE UTILITY MODEL
The utility model provides a prevent optical crosstalk Micro-LED chip architecture and Micro-LED display device to solve the problem of crosstalking of light between the pixel of chip architecture.
According to the utility model discloses an aspect provides a prevent light and cross talk Micro-LED chip architecture, the chip architecture includes:
a transparent substrate;
the LED pixel units are positioned on the transparent substrate, and each LED pixel unit comprises an N-type epitaxial layer, a light emitting layer and a P-type epitaxial layer which are sequentially stacked from bottom to top from the transparent substrate; the N-type epitaxial layer is provided with a mesa step; two adjacent LED pixel units are spaced by a first groove, and the first groove penetrates through the P-type epitaxial layer, the light-emitting layer and the N-type epitaxial layer to the transparent substrate;
the N electrode unit is arranged on the edge of the transparent substrate and has a conductive function;
the light absorption layer is arranged on the transparent substrate where the first groove is located and on the transparent substrate between the N electrode unit and the adjacent LED pixel unit; the light absorption layer is made of a black conductive material;
the metal conducting layer covers two sides and the side wall of the mesa step of the N-type epitaxial layer of each LED pixel unit and the light absorption layer so as to electrically connect the N-type epitaxial layers of all the LED pixel units; the N-type epitaxial layers of all the LED pixel units are electrically connected to the N electrode unit;
insulating layer: the metal conducting layer, the upper surface of the mesa step, the upper surface of the P-type epitaxial layer and the upper surface of the N electrode unit are filled between two adjacent LED pixel units and between the N electrode unit and the adjacent LED pixel units;
the P electrode penetrates through the insulating layer and is arranged on the P type epitaxial layer of the LED pixel unit;
and the N electrode penetrates through the insulating layer and is arranged on the N electrode unit.
Optionally, the metal conductive layer further has a mirror function as a mirror layer; the material is Ni, ag, al, ti, pt, cr, tiWu or Au.
Optionally, the side wall of the mesa step is an inclined plane, and the inclination angle is 60-90 degrees.
Optionally, the display device further comprises a first microstructure formed on the transparent substrate between two adjacent LED pixel units and between the N-electrode unit and its adjacent LED pixel unit.
Optionally, the first microstructure is a V-shaped groove or a strip-shaped groove.
Optionally, the LED pixel structure further comprises a second microstructure formed at the bottom of all the LED pixel units.
Optionally, the light absorbing layer is made of a ferrous metal material or conductive black glue.
Optionally, the ferrous metal material is specifically any one or a combination of Cr, wu, or TiWu.
Optionally, the conductive black glue includes a black glue layer and a metal layer covering the black glue layer.
Optionally, the upper surfaces of all the P electrodes and all the N electrodes are located at the same horizontal plane.
Optionally, the N electrode unit is made of conductive metal.
Optionally, the N electrode unit includes an N-type epitaxial layer, a light emitting layer, and a P-type epitaxial layer stacked in sequence from bottom to top on the transparent substrate; and the surface and the side surface of the N electrode unit are covered with the metal conducting layer.
Optionally, the P-type epitaxial layer and the N-type epitaxial layer of the LED pixel unit are P-type GaN and N-type GaN, respectively.
Optionally, an ohmic contact layer is further disposed between the P-type epitaxial layer and the P-electrode of the LED pixel unit.
Optionally, the insulating layer is made of SiO2, si3N4, PCB, BCB, or insulating glue.
Optionally, the transparent substrate is a growth transparent substrate.
Optionally, the transparent substrate is a bonded transparent substrate, and the chip structure is bonded to the bonded transparent substrate through a bonding layer after being peeled off from the growth substrate.
According to the utility model discloses a second aspect provides a Micro-LED display device, a serial communication port, include the utility model discloses the light crosstalk prevention Micro-LED chip structure that first aspect and alternative provided.
The utility model provides a prevent light and crosstalk Micro-LED chip structure, it is spaced apart through first slot between two adjacent LED pixel units, first slot runs through P type epitaxial layer, luminescent layer and N type epitaxial layer, until transparent substrate. Because adjacent pixels are completely spaced, completely independent pixel units are formed, and therefore crosstalk of light rays among the pixels can be effectively reduced.
And light absorption layers are arranged on the transparent substrate where the first grooves are located and on the transparent substrate between the N electrode unit and the adjacent LED pixel unit. The light absorption layer is made of black conductive materials, has a light absorption function, and can effectively prevent light from being reflected in the area, so that light crosstalk is further reduced.
The metal conducting layers are covered on the two sides and the side wall of the mesa step of the N-type epitaxial layer of each LED pixel unit and the light absorption layer, so that the N-type epitaxial layers of all the LED pixel units are electrically connected, and the N-type epitaxial layers of all the LED pixel units are electrically connected to the N electrode unit, so that the connection of the N electrodes is realized, and the driving is more convenient.
In a further preferred embodiment, the metal conducting layer still has a mirror function, as the mirror layer, makes the utility model discloses a chip structure's light-emitting efficiency improves greatly.
In a further preferred embodiment, the first microstructures are further formed on the transparent substrate between two adjacent LED pixel units and between the N-electrode unit and its adjacent LED pixel unit, so that crosstalk of light is further reduced, and light emitting efficiency is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the description below are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without inventive labor.
Fig. 1 is a schematic structural diagram of an optical crosstalk prevention Micro-LED chip structure provided in an exemplary embodiment of the present invention;
fig. 2 is a schematic structural diagram of an LED pixel unit provided in an exemplary embodiment of the present invention;
fig. 3 is a schematic view of a second microstructure provided in an exemplary embodiment of the invention;
fig. 4 is a first schematic flowchart illustrating a method for manufacturing an optical crosstalk prevention Micro-LED chip structure according to an exemplary embodiment of the present invention;
fig. 5 is a schematic flow chart diagram illustrating a second method for manufacturing a Micro-LED chip structure for preventing optical crosstalk according to an exemplary embodiment of the present invention;
fig. 6 to fig. 12 are schematic device structure diagrams corresponding to steps of a method for manufacturing a Micro-LED chip structure for preventing optical crosstalk according to an exemplary embodiment of the present invention;
fig. 13 is a schematic structural diagram of a plurality of LED pixel cell arrays provided in an exemplary embodiment of the present invention.
Description of reference numerals:
100-a transparent substrate;
101-N epitaxial layer;
102-a light emitting layer;
103-P type epitaxial layer;
104-a first trench;
105-a first microstructure;
106-a second microstructure;
107-mesa steps;
200-LED pixel cells;
a 300-N electrode unit;
400-a light absorbing layer;
500-a metal conductive layer;
600-ohmic contact layer;
700-an insulating layer;
801-N electrode;
an 802-P electrode.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
The terms "first," "second," "third," "fourth," and the like in the description and in the claims, as well as in the drawings, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those illustrated or otherwise described herein. Moreover, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The technical solution of the present invention will be described in detail with specific examples. The following several specific embodiments may be combined with each other, and details of the same or similar concepts or processes may not be repeated in some embodiments.
Referring to fig. 1 and 2, as shown in fig. 1 and 2, the chip structure includes a transparent substrate 100, a plurality of pixel units 200 disposed on the transparent substrate 100, and an N electrode unit 300. Each LED pixel unit 200 comprises an N-type epitaxial layer 101, a light-emitting layer 102 and a P-type epitaxial layer 103 which are sequentially stacked from bottom to top from the transparent substrate 100; wherein the N-type epitaxial layer 101 has a mesa step; two adjacent LED pixel units 200 are spaced apart by a first groove, and the first groove penetrates through the P-type epitaxial layer 103, the light emitting layer 103 and the N-type epitaxial layer 101 to the transparent substrate 100.
In the prior art, the N type epitaxial layer between the pixel unit is not totally cut off by the slot that corresponds, and the embodiment of the utility model provides an in through setting up first slot, with spaced apart totally between the adjacent pixel, form completely independent pixel unit to can effectively reduce the crosstalk of light between the pixel.
The embodiment of the utility model provides a chip architecture still includes N electrode unit 300, its set up in on transparent substrate 100's the edge, have electrically conductive function.
In order to further prevent crosstalk between pixels, in the chip structure in the embodiment of the present invention, a light absorption layer 400 is disposed on the transparent substrate where the first groove is located and on the transparent substrate between the N-electrode unit 300 and the adjacent LED pixel unit 200; the light absorbing layer 400 is made of a black conductive material. By the light absorption function of the light absorption layer 400, light can be further effectively prevented from being reflected in this region, thereby further reducing light crosstalk.
As a specific embodiment, the light absorbing layer 400 is made of a ferrous metal material or conductive black glue. The ferrous metal material is specifically any one or combination of Cr, wu or TiWu. The conductive black glue comprises a black glue layer and a metal layer covered on the black glue layer. Of course, the present invention is not limited thereto, and all conductive materials with light absorption function are within the protection scope of the present invention.
The embodiment of the present invention provides a chip structure further comprising a metal conductive layer 500, wherein the metal conductive layer 500 covers both sides and sidewalls of the mesa step of the N-type epitaxial layer 101 of each LED pixel unit 200 and the light absorption layer 400, so that the N-type epitaxial layers 101 of all the LED pixel units 200 are electrically connected; and the N-type epitaxial layers 101 of all the LED pixel units 200 are electrically connected to the N-electrode unit 300.
The embodiment of the utility model provides a chip architecture still includes insulating layer 700, its fill between two adjacent LED pixel unit 200 and between N electrode unit 300 and its adjacent LED pixel unit 200, cover metal conducting layer 500 the upper surface of mesa step the upper surface of P type epitaxial layer 103 and the upper surface of N electrode unit 300.
In addition, the chip structure provided by the embodiment of the present invention further includes a P electrode 802 and an N electrode 801, wherein the P electrode 802 penetrates through the insulating layer 700 and is disposed on the P-type epitaxial layer 103 of the LED pixel unit 200; the N electrode 801 penetrates the insulating layer 700 and is disposed on the N electrode unit 300.
Wherein, the embodiment of the utility model provides a LED pixel unit 200's N type epitaxial layer has the mesa step, adopts this kind of structure, covers on the mesa step during the metallic conduction layer, can effectual assurance metallic conduction layer not with luminescent layer and the contact of P type epitaxial layer in the LED pixel unit, set up at the metallic conduction layer of mesa step lateral wall with the light-absorbing layer, with the interconnection of the N type epitaxial layer of every LED pixel unit, and be connected to the N electrode for form N electrode altogether between all LED pixel units, the P electrode on every LED pixel unit passes through peripheral drive circuit and drives alone, thereby realizes every LED pixel independent control.
In one embodiment, the metal conductive layer 500 further has a mirror function as a mirror layer. The material is Ni, ag, al, ti, pt, cr, tiWu or Au. The metal conducting layer on the mesa step side wall of each LED pixel unit has the function of a reflector besides the function of connecting the N-type epitaxial layer of each LED pixel unit, and the luminous efficiency of the LED pixel is enhanced. In one embodiment, the side wall of the mesa step is an inclined surface, and the inclination angle is 60-90 degrees. When the side wall of the mesa step inclines for a certain angle, reflection can be effectively enhanced, the luminous efficiency of the pixel is improved, when the inclination angle is too large, the distance between two adjacent LED pixel units can be increased, and therefore the area is wasted, and the inclination angle is 60-90 degrees, which is a proper angle adopted in application.
In one embodiment, please refer to fig. 2 and fig. 3, the chip structure of the present invention further includes a first microstructure 105, wherein the first microstructure 105 is formed on the transparent substrate between two adjacent LED pixel units and between the N electrode unit and the adjacent LED pixel unit.
In one embodiment, the first microstructure 105 is a V-shaped groove (as shown in fig. 2), however, the first microstructure may have other forms, such as a stripe-shaped groove. The crosstalk caused by light reflection can be further reduced by arranging the first microstructures.
In one embodiment, please refer to fig. 3, which further includes a second microstructure 106, wherein the second microstructure 106 is formed at the bottom of all the LED pixel units 200. The second microstructure 106 forms a diffuse reflection microstructure layer at the bottom of the LED pixel unit 200, so that crosstalk caused by reflection of bottom light can be reduced by diffuse reflection of light. The second microstructures 106 are periodic stripe structures. Of course, the present invention is not limited thereto, and other types of second microstructures are also within the scope of the present invention.
In one embodiment, all the P electrodes 802 and all the N electrodes 801 have upper surfaces at the same level. Therefore, the N electrode 801 and the P electrode 802 at the periphery of the LED pixel area are equal in height, and the structure is favorable for bonding of the LED pixel unit structure.
As a specific embodiment, the main structure of the N electrode unit 300, like the LED pixel unit 200, also includes an N-type epitaxial layer 101, a light emitting layer 102, and a P-type epitaxial layer 103; the N-electrode unit 300 has a conductive function by covering the surface of the main structure and the side thereof with the metal conductive layer 500. Of course, it should be appreciated that the present invention is not limited thereto, and the main structure of the N-electrode unit 300 may also be in other forms, for example, the N-electrode unit 300 may be entirely made of conductive metal.
The main function of the N electrode unit 300 is to lead out an N electrode 801 at the periphery of the LED pixel area, and the N type epitaxial layers 101 of all LED pixel units are interconnected through the metal conductive layer 500 and the light absorbing layer 400 and LED out to the N electrode unit 300 to form a common N structure. In the preparation process, the N electrode unit may be made of conductive metal arranged on the transparent substrate, or may be prepared by covering the surface and the side surface of the LED pixel unit arranged on the edge of the transparent substrate with the metal conductive layer, as long as the requirement that the N-type epitaxial layers of all the LED pixel units are interconnected to the N electrode through the metal conductive layer and the light absorption layer is satisfied, and the upper surfaces of all the P electrodes and all the N electrodes are located on the same horizontal plane is ensured.
As a specific embodiment, the P-type epitaxial layer 103 and the N-type epitaxial layer 101 of the LED pixel cell 200 are P-type GaN and N-type GaN, respectively. Of course, it should be appreciated that the present invention is not limited thereto, and other types of P-type epitaxial layer and N-type epitaxial layer are also within the scope of the present invention. And as an example, the N-type epitaxial layer 101 may include an intrinsic epitaxial portion epitaxially grown from a transparent substrate and an N-type doped portion between the intrinsic epitaxial portion and the light emitting layer. Wherein the intrinsic epitaxial portion acts as a buffer layer. And as an example, the light emitting layer 102 may be a quantum well light emitting layer.
In a preferred embodiment, the P-electrode 802 and the P-type epitaxial layer 103 further comprise an ohmic contact layer 600 therebetween; by providing the ohmic contact layer 600, the electrical contact performance is better. As one embodiment, the material of the ohmic contact layer 600 may be Indium Tin Oxide (ITO) or Ni/Au.
In one embodiment, the insulating layer 700 is made of SiO2, si3N4, PCB, BCB, or an insulating glue.
In one embodiment, the transparent substrate is a grown transparent substrate. In another embodiment, the transparent substrate is a bonded transparent substrate, and the chip structure is bonded to the bonded transparent substrate through a bonding layer after being peeled off from the growth substrate. The transparent substrate 100 in this embodiment may be a growth transparent substrate, such as a sapphire transparent substrate, or may be bonded to another transparent substrate through a bonding layer after the growth substrate is peeled off.
Referring to fig. 4 to 12, fig. 4 is a schematic flow chart of a method for manufacturing a photo crosstalk prevention Micro-LED chip structure according to an exemplary embodiment of the present invention, and fig. 5 is a schematic flow chart of a method for manufacturing a photo crosstalk prevention Micro-LED chip structure according to an exemplary embodiment of the present invention; fig. 6 to 12 are schematic device structure diagrams corresponding to steps of a method for manufacturing a Micro-LED chip structure for preventing optical crosstalk according to an exemplary embodiment of the present invention. Referring to fig. 4-5 in conjunction with fig. 6-12, a method for manufacturing a Micro-LED chip structure for preventing optical crosstalk according to an exemplary embodiment of the present invention includes the following steps:
s1, providing an epitaxial wafer; as shown in fig. 6, the epitaxial wafer includes a transparent substrate 100, and an N-type epitaxial layer 101, a light emitting layer 102, and a P-type epitaxial layer 103 sequentially formed on the transparent substrate from bottom to top.
S2, etching the epitaxial wafer to form a mesa step 107 on the N-type epitaxial layer 101 and form a first groove 104, wherein the first groove 104 penetrates through the P-type epitaxial layer 103, the light emitting layer 102 and the N-type epitaxial layer 101 to the transparent substrate 100; to form a plurality of LED pixel cells 200; the device structure after this step is completed is shown in fig. 8.
As a specific implementation manner, as shown in fig. 5, step S2 may include two etching steps, which specifically include:
s21, carrying out first photoetching and etching on the epitaxial wafer by using a first mask until the surface of the N-type epitaxial layer 101 is etched, and preparing the mesa step; the structure of the device after the first lithography and etching is shown in fig. 7.
S22, carrying out second photoetching and etching on the epitaxial wafer by using a second mask, and etching through the N-type epitaxial layer 101 until the transparent substrate 100 is etched to form the first groove 104; the device structure after this step is completed is shown in fig. 8.
As a preferred embodiment, the second photolithography and etching further includes etching the transparent substrate 100 to form the first microstructure 105 on the transparent substrate where the first trench 104 is located, as shown in fig. 8.
As a further preferred embodiment, the second photolithography and etching further includes etching the transparent substrate 100 to form a second microstructure 106 at the bottom of each LED pixel unit, as shown in fig. 8.
In an embodiment, the transparent substrate is used as a growth transparent substrate, a composite pattern transparent substrate with a special structure is adopted, the first microstructure is naturally formed on the transparent substrate at the position corresponding to the first groove 104 after the second photoetching and etching, and the second microstructure is naturally formed at the bottom of the LED pixel without additional etching. Of course, when other types of transparent substrates are used, the transparent substrate needs to be etched by photolithography to form the first microstructure and the second microstructure.
S3, preparing an N electrode unit 300 at the edge of the transparent substrate; the N electrode unit has a conductive function; as shown in fig. 8, as an embodiment, the main structure of the N-electrode unit 300 is the same as that of the LED pixel unit 200, that is, the N-electrode unit also includes an N-type epitaxial layer 101, a light emitting layer 102, and a P-type epitaxial layer 103, which are sequentially stacked from bottom to top on the transparent substrate. And, the N electrode unit may be formed simultaneously with the LED pixel unit, not sequentially.
And S4, depositing black conductive materials on the transparent substrate where the first grooves 104 are positioned and the transparent substrate between the N electrode unit 300 and the LED pixel unit 200 adjacent to the N electrode unit to prepare a light absorption layer 400.
S5, depositing metal conducting layers 500 on two sides and side walls of the mesa step of the N-type epitaxial layer of each LED pixel unit and on the light absorption layer so as to electrically connect the N-type epitaxial layers of all the LED pixel units; the N-type epitaxial layers of all the LED pixel units are electrically connected to the N electrode unit; also, in the case where the main structure of the N-electrode unit 300 is the same as that of the LED pixel unit 200, the metal conductive layer 500 also covers the surface and side surfaces of the main structure of the N-electrode unit 300. Please refer to fig. 9 for a structure diagram of the device after the step is completed.
As a preferred embodiment, after step S5, an ohmic contact layer 600 is prepared on the P-type epitaxial layer 103 of the LED pixel unit, and the structure of the completed device is shown in fig. 10.
S6, filling insulating layers 700 between the two adjacent LED pixel units and between the N electrode unit and the LED pixel unit adjacent to the N electrode unit; referring to fig. 11, the insulating layer covers the metal conductive layer, the upper surface of the mesa step, the upper surface of the P-type epitaxial layer, and the upper surface of the N electrode unit.
S7, etching the insulating layer to form a P electrode through hole and an N electrode through hole at preset positions; and depositing a metal conductive material in the P-electrode through hole and the N-electrode through hole to form a P-electrode 802 and an N-electrode 801, wherein the finished device structure is shown in fig. 12.
Please refer to fig. 13, which is a schematic diagram of an array structure formed by a plurality of LED pixel units; as shown in fig. 13, the N-type epitaxial layer of each LED pixel unit 200 is interconnected with the light absorbing layer through the metal conductive layer, and LED out to the N electrode 801 at the periphery of the LED pixel area to form a common N electrode structure, and the P electrode 802 on each LED pixel unit is separately driven by a peripheral driving circuit, so that each LED pixel is independently controlled.
Furthermore, the utility model also provides a Micro-LED display device, it includes foretell anti-optical crosstalk Micro-LED chip structure.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; although the present invention has been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention.
Claims (18)
1. An optical crosstalk prevention Micro-LED chip structure, comprising:
a transparent substrate;
the LED pixel units are positioned on the transparent substrate, and each LED pixel unit comprises an N-type epitaxial layer, a light emitting layer and a P-type epitaxial layer which are sequentially stacked from bottom to top from the transparent substrate; wherein the N-type epitaxial layer is provided with a mesa step; two adjacent LED pixel units are spaced by a first groove, and the first groove penetrates through the P-type epitaxial layer, the light-emitting layer and the N-type epitaxial layer to the transparent substrate;
the N electrode unit is arranged on the edge of the transparent substrate and has a conductive function;
the light absorption layer is arranged on the transparent substrate where the first groove is located and on the transparent substrate between the N electrode unit and the adjacent LED pixel unit; the light absorption layer is made of a black conductive material;
the metal conducting layer covers two sides and the side wall of the mesa step of the N-type epitaxial layer of each LED pixel unit and the light absorption layer so as to electrically connect the N-type epitaxial layers of all the LED pixel units; the N-type epitaxial layers of all the LED pixel units are electrically connected to the N electrode unit;
the insulating layer is filled between two adjacent LED pixel units and between the N electrode unit and the adjacent LED pixel units, and covers the metal conducting layer, the upper surface of the mesa step, the upper surface of the P-type epitaxial layer and the upper surface of the N electrode unit;
the P electrode penetrates through the insulating layer and is arranged on the P type epitaxial layer of the LED pixel unit;
and the N electrode penetrates through the insulating layer and is arranged on the N electrode unit.
2. The anti-optical crosstalk Micro-LED chip structure according to claim 1, wherein said metal conductive layer further has a mirror function as a mirror layer; the material is Ni, ag, al, ti, pt, cr, tiWu or Au.
3. The anti-optical crosstalk Micro-LED chip structure according to claim 1 or 2, wherein the sidewall of said mesa step is an inclined surface with an inclination angle of 60-90 degrees.
4. The anti-optical crosstalk Micro-LED chip structure according to claim 1, further comprising a first microstructure formed on said transparent substrate between two adjacent LED pixel units and between said N-electrode unit and its adjacent LED pixel unit.
5. The optical crosstalk Micro-LED chip structure of claim 4, wherein the first microstructures are V-shaped grooves or stripe-shaped grooves.
6. The anti-optical crosstalk Micro-LED chip structure according to claim 1 or 4, further comprising a second microstructure formed at the bottom of all LED pixel units.
7. The optical crosstalk Micro-LED chip structure of claim 1, wherein the light absorbing layer is made of a black metal material or a conductive black glue.
8. The optical crosstalk prevention Micro-LED chip structure according to claim 7, wherein the ferrous metal material is any one of Cr, wu or TiWu.
9. The anti-optical crosstalk Micro-LED chip structure according to claim 7, wherein said conductive black paste comprises a black paste layer and a metal layer covering said black paste layer.
10. The anti-optical crosstalk Micro-LED chip structure according to claim 1, wherein the upper surfaces of all P electrodes and all N electrodes are located at the same horizontal plane.
11. The anti-optical crosstalk Micro-LED chip structure according to claim 1 or 10, wherein said N electrode unit is a conductive metal.
12. The anti-optical crosstalk Micro-LED chip structure according to claim 1 or 10, wherein the N electrode unit comprises an N type epitaxial layer, a light emitting layer and a P type epitaxial layer sequentially stacked from bottom to top on a transparent substrate; and the surface and the side face of the N electrode unit are covered with the metal conducting layer.
13. The anti-optical crosstalk Micro-LED chip structure according to claim 1, wherein the P-type epitaxial layer and the N-type epitaxial layer of the LED pixel unit are P-type GaN and N-type GaN, respectively.
14. The Micro-LED chip structure for preventing optical crosstalk according to claim 1, wherein an ohmic contact layer is further disposed between the P-type epitaxial layer and the P-electrode of the LED pixel unit.
15. The optical crosstalk Micro-LED chip structure of claim 1, wherein the insulating layer is made of SiO2, si3N4, PCB, BCB, or an insulating glue.
16. The optical crosstalk prevention Micro-LED chip structure of claim 1, wherein the transparent substrate is a growth transparent substrate.
17. The optical crosstalk prevention Micro-LED chip structure according to claim 1, wherein the transparent substrate is a bonded transparent substrate, and the chip structure is bonded to the bonded transparent substrate through a bonding layer after being peeled off from a growth substrate.
18. A Micro-LED display device, comprising the optical crosstalk prevention Micro-LED chip structure according to any one of claims 1 to 17.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114512504A (en) * | 2022-01-28 | 2022-05-17 | 上海芯元基半导体科技有限公司 | Light crosstalk prevention Micro-LED chip structure, preparation method and Micro-LED display device |
| CN116565103A (en) * | 2023-07-06 | 2023-08-08 | 镭昱光电科技(苏州)有限公司 | Micro LED micro display chip and manufacturing method thereof |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114512504A (en) * | 2022-01-28 | 2022-05-17 | 上海芯元基半导体科技有限公司 | Light crosstalk prevention Micro-LED chip structure, preparation method and Micro-LED display device |
| CN116565103A (en) * | 2023-07-06 | 2023-08-08 | 镭昱光电科技(苏州)有限公司 | Micro LED micro display chip and manufacturing method thereof |
| CN116565103B (en) * | 2023-07-06 | 2023-09-08 | 镭昱光电科技(苏州)有限公司 | Micro LED micro display chip and manufacturing method thereof |
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