CN217545855U - Active clamping flyback half-bridge drive circuit - Google Patents
Active clamping flyback half-bridge drive circuit Download PDFInfo
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- CN217545855U CN217545855U CN202221206425.4U CN202221206425U CN217545855U CN 217545855 U CN217545855 U CN 217545855U CN 202221206425 U CN202221206425 U CN 202221206425U CN 217545855 U CN217545855 U CN 217545855U
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Abstract
The embodiment of the utility model provides an active clamping flyback half-bridge drive circuit is related to, include: the transformer is connected with a high-voltage starting and X capacitor discharging circuit, a voltage input circuit, a first feedback circuit, a current sampling circuit, a clamping circuit and a half-bridge driving chip on the primary side, and is connected with an output circuit and a second feedback circuit on the secondary side; the input end of the voltage input circuit is connected with the auxiliary winding, and the output end of the voltage input circuit is respectively connected with the fourth pin, the sixth pin and the eighth pin; the high-voltage starting and X capacitor discharging circuit is connected between the seventh pin and the first end of the primary winding; the ninth pin is connected with the second end of the primary winding; the clamping circuit is connected between the tenth base pin and the first end of the primary winding; the current sampling circuit is connected between the first pin, the second pin and the third pin; the output circuit is connected between the first end and the second end of the secondary winding; the second feedback circuit feeds back the voltage of the output circuit to the primary side through optocoupler feedback, a feedback input is formed through the first feedback circuit, and the output end of the first feedback circuit is connected with the fifth pin.
Description
Technical Field
The utility model relates to an integrated circuit technical field especially relates to active clamping flyback half-bridge drive circuit.
Background
The half-bridge driving circuit is widely applied to an electronic ballast, a Pulse Width Modulation (PWM) motor driving and inverting circuit, and comprises a discrete component driving circuit, a pulse trigger transformer driving circuit and a special integrated chip driving circuit. Among them, discrete component driving has an advantage of low price, but its application is limited due to its poor integration level; the trigger transformer driving has the advantage of convenient realization, but because of the manufacturing error, the two paths of driving signals are easy to distort, and the transformer has large volume and severe heating; the special integrated chip has the advantages of small volume, high reliability, high efficiency and the like.
The half-bridge topology of the power switch device is a common structure of a medium-power and high-power switch power supply, the voltage stress of the primary side power switch device of a transformer can be reduced, in order to reduce the switching loss, the soft switch zero voltage switching-on (ZVS) technology is commonly adopted in the half-bridge topologies such as Active Clamping (ACF) and LLC resonance, the switching frequency can be improved, and the product volume is reduced.
As a third generation semiconductor material, compared with a charger based on a traditional silicon power device, the gallium nitride fast charging device has the characteristics of smaller product volume, lighter weight, higher efficiency, less heat generation and the like. Therefore, in the aspect of a controller, three mainstream gallium nitride fast charging architectures including flyback (QR), active Clamping (ACF) and resonance (LLC) are mainly covered.
The QR framework covers the application field of low-power quick charging, and the cost performance is high; the ACF framework covers a power section of mainstream quick charging application, and the power density is high; the LLC architecture covers most high power applications with a wide frequency range. Each of them has its own advantages.
In terms of the existing ACF framework, the threshold voltage Vth and the gate-source withstand voltage value of the high-voltage enhanced GaN power device are lower than those of a silicon-based (Si) power device, and the requirement on the precision of the gate-source driving voltage is higher. It is common in the art to have the driver and GaN power devices separate and externally connected by Printed Circuit Board (PCB) wiring. The parasitic inductance of the structure is large, and the gate-source voltage of the GaN power device can generate ringing phenomenon, so that the device is easy to damage.
In addition, in the prior art, the ACF circuit has numerous peripheral components and is difficult to debug; the cost is higher than QR, a tube is required to be installed, a half-bridge drive is required, digital isolation or transformer isolation is required, and the structure is relatively complex.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing an active clamping flyback half-bridge drive circuit, with the flat pin package PDFN frame integrated host system in shape both sides, first gallium nitride power tube and second gallium nitride power tube, form one and close and seal the chip, reduce the parasitic parameter in the drive loop through the reasonable overall arrangement physical structure in the chip, guarantee host system and gallium nitride power tube's heat dissipation, optimize the pin, make chip peripheral device quantity reduce by a wide margin, the circuit structure and the debugging degree of difficulty of active clamping flyback circuit have greatly been simplified.
Therefore, the embodiment of the utility model provides an active clamping flyback half-bridge drive circuit, the circuit includes: the transformer comprises a primary circuit connected to the primary side of the transformer and a secondary circuit connected to the secondary side of the transformer; the transformer comprises a primary winding, a secondary winding and an auxiliary winding;
the primary side circuit includes: the high-voltage starting and X capacitor discharging circuit, the voltage input circuit, the first feedback circuit, the current sampling circuit, the clamping circuit and the half-bridge driving chip for sealing the gallium nitride power device are arranged on the high-voltage starting and X capacitor discharging circuit; wherein, the pin of half-bridge driver chip includes respectively: a first pin, a second pin, a reference ground PGND, a third pin current sampling input CS, a fourth pin voltage detection VS, a fifth pin feedback input FB, a sixth pin chip power input VCC, a seventh pin X capacitor discharge XCD, an eighth pin high-end driver power input VCCH, a ninth pin half-bridge output HB, and a tenth pin clamp capacitor access CR;
the secondary side circuit comprises an output circuit and a second feedback circuit;
the input end of the voltage input circuit is connected with the auxiliary winding, and the output end of the voltage input circuit is respectively connected with the fourth pin, the sixth pin and the eighth pin;
the high-voltage starting and X capacitor discharging circuit is connected between the seventh pin and the first end of the primary winding;
the ninth pin is connected with the second end of the primary winding;
the clamping circuit is connected between the tenth pin and the first end of the primary winding;
the current sampling circuit is connected among the first pin, the second pin and the third pin;
the output circuit is connected between the first end and the second end of the secondary winding;
the input end of the second feedback circuit is connected with the output circuit, the second feedback circuit feeds back to the output of the primary side through the optocoupler, the input end of the first feedback circuit senses the feedback input of the optocoupler, and the output end of the first feedback circuit is connected with the fifth pin.
Preferably, the first pin and the second pin are connected inside a half-bridge driving chip of the sealed gallium nitride power device.
Preferably, the half-bridge driving chip of the close-sealed gallium nitride power device adopts a square bilateral flat pin-free packaging PDFN frame, and the inside of the half-bridge driving chip comprises: the power supply comprises a main control module, a first gallium nitride power tube and a second gallium nitride power tube;
the PDFN framework is internally provided with a first base island and a second base island which are separated by an insulating layer; the main control module and the second gallium nitride power tube are arranged in the first base island, and the first gallium nitride power tube is arranged in the second base island; the first to sixth pins are on one side close to the first base island, and the seventh to tenth pins are on one side close to the second base island; in the first base island, the second gallium nitride power tube is positioned above the main control module; a first gallium nitride power tube in the second base island and a second gallium nitride power tube in the first base island are horizontally arranged;
the main control module includes logic control circuit and half-bridge drive circuit, logic control circuit with half-bridge drive circuit is connected, first gallium nitride power tube and second gallium nitride power tube establish ties between tenth pin and first, second pin, half-bridge drive circuit's drive output connects the drive end of first gallium nitride power tube and second gallium nitride power tube respectively, the source electrode of first gallium nitride power tube with the drain electrode of second gallium nitride power tube connects and is connected to the ninth pin.
Further preferably, the source of the first gallium nitride power tube and the drain of the second gallium nitride power tube are respectively directed to an insulating layer isolating the first base island and the second base island;
the drain electrode of the first gallium nitride power tube is connected with a tenth pin of the chip through the internal routing of the chip;
the source electrode of the first gallium nitride power tube and the drain electrode of the second gallium nitride power tube are respectively connected to the second base island through routing inside the chip and are communicated with the ninth pin of the half-bridge driving chip through the second base island;
and the source electrode of the second gallium nitride power tube is connected to the first base island through routing inside the chip and is communicated with the first pin and the second pin of the half-bridge driving chip through the first base island.
Further preferably, the pins of the chip are isolated by the insulating layer.
Further preferably, the main control module includes: the power supply circuit comprises a power supply input end VCC, a high-voltage starting circuit input end HV, a ground end GND, a high-end driver power supply input end VCCH, a half-bridge output end HB, three input and output ends, a first driving signal output end GTH and a second driving signal output end GTL;
the power supply input end VCC of the main control module is connected with the sixth pin of the half-bridge driving chip through the internal routing of the chip;
three input and output ends of the main control module are respectively connected with the third pin, the second pin and the fifth pin of the half-bridge driving chip through internal routing of the chip;
the input end HV of the high-voltage starting circuit of the main control module is connected with the seventh pin of the half-bridge driving chip through the internal routing of the chip;
the ground end GND of the main control module is connected to the first base island through a wire bonding inside the chip and is communicated with the first pin and the second pin of the half-bridge driving chip through the first base island;
the half-bridge output end HB of the main control module is connected to the second base island through a wire bonding inside the chip and is communicated with a ninth pin of the half-bridge driving chip through the second base island;
the first driving signal output end GTH is connected with the grid electrode of the first gallium nitride power tube through a wire bonding inside the chip;
and the second driving signal output end GTL is connected with the grid electrode of the second gallium nitride power tube through a wire bonding in the chip.
Further preferably, the copper sheet is exposed on the back of the chip corresponding to the positions of the first base island and the second base island.
Further preferably, the first end of the primary winding, the second end of the secondary winding, and the first end of the auxiliary winding are terminals of the same name.
Preferably, the clamping circuit includes a clamping capacitor, one end of the clamping capacitor is connected to the first end of the primary winding, and the other end of the clamping capacitor is connected to the third pin;
the current sampling circuit comprises a sampling resistor, one end of the sampling resistor is connected with the source electrode of the second gallium nitride power tube, and the other end of the sampling resistor is connected with the third base pin;
the first feedback circuit comprises a phototriode and a capacitor, one end of the capacitor is connected with a collector of the phototriode and is connected with the fifth pin, and the other end of the capacitor is connected with an emitter of the phototriode and is connected with the first pin and the second pin.
Further preferably, the second feedback circuit includes: the circuit comprises a first voltage-dividing resistor, a second voltage-dividing resistor, an optical coupler and a clamping diode;
the first voltage-dividing resistor and the second voltage-dividing resistor are connected in series between the output end of a secondary side circuit of the active clamping flyback half-bridge driving circuit and the ground, and a connection point between the first voltage-dividing resistor and the second voltage-dividing resistor is a secondary side feedback reference point;
the optical coupler is connected between the output end of the secondary side circuit and a secondary side feedback reference point in series;
the clamping diode is reversely connected between the secondary side feedback reference point and the ground.
The embodiment of the utility model provides an active clamping flyback half-bridge drive circuit, with the flat pin-free encapsulation PDFN frame integrated host system in shape both sides, first gallium nitride power tube and second gallium nitride power tube, form one and close a chip, reduce the parasitic parameter in the drive loop through the reasonable layout physical structure in the chip, guarantee host system and gallium nitride power tube's heat dissipation, optimize the pin, make chip peripheral device quantity reduce by a wide margin, the circuit structure and the debugging degree of difficulty of active clamping flyback circuit have greatly been simplified.
Drawings
Fig. 1 is a schematic diagram of an active clamping flyback half-bridge driving circuit provided by the present invention;
fig. 2 is a schematic diagram of an internal structure of a half-bridge driving chip for encapsulating a gan power device in a half-bridge driving circuit according to this embodiment;
fig. 3 is a schematic diagram of a half-bridge driving signal according to the present embodiment.
Detailed Description
The technical solution of the present invention is further described in detail by the accompanying drawings and embodiments.
The embodiment of the utility model provides an active clamping flyback half-bridge drive circuit, as shown in fig. 1, include: the transformer 100 comprises a primary circuit connected to the primary side of the transformer and a secondary circuit connected to the secondary side of the transformer; the transformer comprises a primary winding 101, a secondary winding 102 and an auxiliary winding 103; the first end of the primary winding 101, the second end of the secondary winding 102 and the first end of the auxiliary winding 103 are homonymous ends.
The primary side circuit includes: the high-voltage starting and X capacitor discharging circuit 20, the voltage input circuit 30, the first feedback circuit 40, the current sampling circuit 50, the clamping circuit 60 and the half-bridge driving chip 10 for sealing the gallium nitride power device; the secondary side circuit includes an output circuit 70 and a second feedback circuit 80.
The pins of the half-bridge driving chip 10 respectively include: a first pin, a second pin, a reference ground PGND, a third pin current sampling input CS, a fourth pin voltage detection VS, a fifth pin feedback input FB, a sixth pin chip power input VCC, a seventh pin X capacitor discharge XCD, an eighth pin high-end driver power input VCCH, a ninth pin half-bridge output HB, and a tenth pin clamp capacitor access CR; the first pin and the second pin are connected inside a half-bridge driving chip 10 which seals the gallium nitride power device.
Fig. 2 is a schematic diagram of an internal structure of a half-bridge driving chip for encapsulating a gan power device in a half-bridge driving circuit according to this embodiment, and the circuit structure and connection relationship are further described with reference to fig. 1 and 2.
The half-bridge driving chip 10 of the close-sealed gallium nitride power device adopts a square bilateral flat pin-free Package (PDFN) frame 3, and comprises: the device comprises a main control module 4, a first gallium nitride power tube 5 and a second gallium nitride power tube 6;
the PDFN frame is internally provided with a base island 1 and a base island 2, and the base island 1 and the base island 2 are isolated by an insulating layer 7; the main control module 4 and the second gallium nitride power tube 6 are arranged in the base island 1, the first gallium nitride power tube 5 is arranged in the second base island, and the source electrode of the first gallium nitride power tube 5 and the drain electrode of the second gallium nitride power tube 6 respectively face to the insulating layer 7 for isolating the base island 1 and the base island 2; the back surface of the half-bridge driving chip 10 corresponds to the exposed copper sheets at the positions of the base island 1 and the second base island, so that the half-bridge driving chip 10, especially the main control module 4, the first gallium nitride power tube 5 and the second gallium nitride power tube 6, has good heat dissipation performance.
The main control module 4 can be functionally subdivided into a logic control circuit 41 and a half-bridge driving circuit 42, the logic control circuit 41 is connected with the half-bridge driving circuit 42, the first gallium nitride power tube 5 and the second gallium nitride power tube 6 are connected in series between the tenth pin and the first and second pins, the driving output of the half-bridge driving circuit 42 is respectively connected with the driving ends of the first gallium nitride power tube 5 and the second gallium nitride power tube 6, and the source of the first gallium nitride power tube 5 is connected with the drain of the second gallium nitride power tube 6 and is connected with the ninth pin. The logic control circuit 41 generates complementary pulse width modulation signals according to the input signals of the input and feedback pins and outputs the driving signals of the first gallium nitride power tube 5 and the second gallium nitride power tube 6 through level conversion and driving, and the first gallium nitride power tube 5 and the second gallium nitride power tube 6 are alternately switched on and off according to driving.
As shown in fig. 2, the main control module 4 specifically includes: a first drive signal output terminal GTH, a second drive signal output terminal GTL, a power supply input terminal VCC, a high-voltage starting circuit input terminal HV, a ground terminal GND, a high-end driver power supply input terminal VCCH, a half-bridge output terminal HB and three input and output terminals; the first driving signal output end GTH is connected with the grid electrode of the first gallium nitride power tube 5 through chip internal routing, and the second driving signal output end GTL is connected with the grid electrode of the second gallium nitride power tube 6 through chip internal routing; the power supply input end VCC is connected with a sixth pin of the chip through a wire bonding inside the chip; the three input and output ends are respectively connected with the third pin, the second pin and the fifth pin of the chip through internal routing of the chip; the input end HV of the high-voltage starting circuit is connected with a seventh pin of the chip through a wire bonding inside the chip; the grounding end GND is connected to the base island 1 through a routing in the chip and is communicated with the first pin and the second pin of the chip through the base island 1; the half-bridge output end HB is connected to the base island 2 through the internal routing of the chip and is communicated with a ninth pin of the chip through the base island 2. The inside of the drain chip of the first gallium nitride power tube 5 is connected with a tenth pin of the chip by wire bonding; the source electrode of the first gallium nitride power tube 5 and the drain electrode of the second gallium nitride power tube 6 are respectively connected to the base island 2 through the inside routing of the chip, and are communicated with the ninth pin of the chip through the base island 2 to be used as the half-bridge output of the chip. Further, the respective pins in the half-bridge driving chip 10 are also isolated by the insulating layer 3.
In the half-bridge driving chip 10, the first to sixth pins are on the side close to the base island 1, and the seventh to tenth pins are on the side close to the base island 2; in the base island 1, a second gallium nitride power tube 6 is positioned above the main control module 4; the first gallium nitride power tube 5 in the base island 2 and the second gallium nitride power tube 6 in the base island 1 are horizontally arranged. The layout structure enables the positions of the device modules to basically correspond to the positions of the connected peripheral pins, and the connecting routing among the device modules is also optimal, so that the routing inside a chip is optimized, the routing distance is shortened, and the parasitic parameters inside the chip are reduced.
The peripheral circuit of the half-bridge driving chip 10 in the active clamping flyback half-bridge driving circuit proposed in this embodiment is as follows:
the input end of the voltage input circuit 30 is connected with the auxiliary winding 103, and the output end is respectively connected with the fourth pin, the sixth pin and the eighth pin;
the high-voltage starting and X capacitor discharging circuit 20 is connected between the seventh pin and the first end of the primary winding 101; the ninth pin is connected with the second end of the primary winding 101;
the clamp circuit 60 is connected between the tenth pin and the first end of the primary winding 101; the clamping circuit 60 comprises a clamping capacitor C CLAMP Clamping capacitor C CLAMP One end of which is connected with the first end of the primary winding 101 and the other end of which is connected with the third pin;
the current sampling circuit 50 is connected between the first, second and third pins; the current sampling circuit 50 comprises a sampling resistor R0, one end of the sampling resistor R0 is connected with a source electrode of the second gallium nitride power tube, and the other end of the sampling resistor R0 is connected with a third base pin;
the output circuit 70 is connected between the first and second ends of the secondary winding 102;
the input end of the second feedback circuit 80 is connected to the output circuit 70, the second feedback circuit 80 feeds back the output of the primary side through the optocoupler D1, the input end of the first feedback circuit 40 senses the feedback input of the optocoupler D1, and the output end of the first feedback circuit 40 is connected to the fifth pin.
Specifically, the first feedback circuit 40 includes a phototransistor T1 and a capacitor C1, one end of the capacitor C1 is connected to the collector of the phototransistor T1 and connected to the fifth pin, and the other end of the capacitor C1 is connected to the emitter of the phototransistor T1 and connected to the first and second pins.
The second feedback circuit 80 includes a first voltage-dividing resistor R1, a second voltage-dividing resistor R2, an optical coupler D1, and a clamping diode T2; the first voltage-dividing resistor R1 and the second voltage-dividing resistor R2 are connected in series between the output end OUT of the secondary side circuit 102 of the active clamping flyback half-bridge driving circuit and the ground, and the connection point between the first voltage-dividing resistor R1 and the second voltage-dividing resistor R2 is a secondary side feedback reference point A1; the optocoupler D1 is connected in series between the output end OUT of the secondary side circuit 102 and a secondary side feedback reference point A1;
the clamping diode T2 is reversely connected between the secondary side feedback reference point A1 and the ground. The input end of the second feedback circuit 80 is connected with the output circuit 70, the second feedback circuit feeds back the output of the primary side through the optocoupler D1, the input end of the first feedback circuit 40 senses the feedback input of the optocoupler D1, therefore, the output voltage of the half-bridge driving circuit is monitored in real time through the second feedback circuit 80, the monitoring result is fed back to the primary side through the optocoupler D1 in a current mode, and meanwhile, the isolation of the input end and the output end is guaranteed.
The utility model discloses an active clamping flyback half-bridge drive circuit during operation, start through the high pressure and provide high-pressure start signal with X electric capacity discharge circuit 20, provide half-bridge drive chip 10's operating voltage through voltage input circuit 30, third pin current sampling input CS, fourth pin voltage detection VS, fifth pin feedback input FB input half-bridge drive chip 10 as logic control signal input.
The half-bridge driving chip 10 generates a first control signal PWMH and a second control signal PWML of complementary pulse width modulation signals according to the logic control signal, and then controls the high-side driver of the first gan power transistor 5 to output a gate driving signal GTH of the first gan power transistor 5 and controls the low-side driver of the second gan power transistor 6 to output a gate driving signal GTL of the second gan power transistor 6 respectively according to the two signals. Under the condition that the first control signal PWMH and the second control signal PWML are complementary pulse width modulation signals, the first gate drive signal GTH and the second gate drive signal GTL drive the first gallium nitride power tube 5 and the second gallium nitride power tube 6 to be alternately turned on and off to generate half-bridge drive signals VgH and VgL, and dead time T _ dt exists in the alternating process, and the half-bridge drive signals are illustrated in fig. 3.
In an initial state, the first gallium nitride power tube 5 is closed, the second gallium nitride power tube 6 is opened, current forms a loop to the ground through the primary winding 101 and the second gallium nitride power tube 6, and the bus capacitor Cbus and the transformer leakage inductance store energy;
before the second GaN power tube 6 is turned off and the first GaN power tube 5 is turned on, the clamping current generated by the leakage inductance energy flows through the body diode of the first GaN power tube 5 to the clamping capacitor C CLAMP When the second gallium nitride power tube 6 is opened after dead time, leakage inductance energy enters C through the first gallium nitride power tube 5 CLAMP ；
After the second GaN power tube 6 is closed and the first GaN power tube 5 is opened, the clamping capacitor C CLAMP Generates resonance with the leakage inductance of the transformer, the current direction changes, and the clamping capacitor C is arranged in the resonance process CLAMP The energy in the transformer leakage inductance is recycled to the secondary side, and the energy in the transformer leakage inductance is utilized.
And then the first gallium nitride power tube 5 is closed, the second gallium nitride power tube 6 is closed, and after the first gallium nitride power tube 5 is closed, the current draws away charges in an output capacitor of the second gallium nitride power tube 6, so that the voltage of two ends of the output capacitor of the second gallium nitride power tube 6 is reduced, and the zero voltage switching-on (ZVS) function of the second gallium nitride power tube 6 is realized.
And after the dead time, the state of closing the first gallium nitride power tube 5 and opening the second gallium nitride power tube 6 is returned, and the process is repeated.
The output of the secondary stage generates a feedback signal through the first feedback circuit and the second feedback circuit and sends the feedback signal to the main control module 4, so that the dead time can be adjusted according to the circuit output.
The embodiment of the utility model provides an active clamping flyback half-bridge drive circuit, with the flat pin-free encapsulation PDFN frame integration host system in shape both sides, first gallium nitride power tube and second gallium nitride power tube, form one and close a chip, reduce the parasitic parameter in the drive loop through the reasonable overall arrangement physical structure in the chip, guarantee host system and gallium nitride power tube's heat dissipation, optimize the pin, make chip peripheral device quantity reduce by a wide margin, the circuit structure and the debugging degree of difficulty that active clamping flyback circuit has greatly been simplified.
It should be noted that the utility model provides an active clamping flyback half-bridge drive circuit can confirm frame type and the size specifically chooseed for use according to practical application environment and system parameter requirement, and the number of pin position, IO mouth and definition and peripheral circuit's setting also all can be decided according to the practical application demand. The above is only a specific way to realize the implementation, and is not intended to limit the scope of the practical implementation.
The above-mentioned embodiments, further detailed description of the objects, technical solutions and advantages of the present invention, it should be understood that the above description is only the embodiments of the present invention, and is not intended to limit the scope of the present invention, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. An active clamping flyback half-bridge driver circuit, the circuit comprising: the transformer comprises a primary side circuit connected to a primary side of the transformer and a secondary side circuit connected to a secondary side of the transformer; the transformer comprises a primary winding, a secondary winding and an auxiliary winding;
the primary side circuit includes: the high-voltage starting and X capacitor discharging circuit, the voltage input circuit, the first feedback circuit, the current sampling circuit, the clamping circuit and the half-bridge driving chip for sealing the gallium nitride power device are arranged on the high-voltage starting and X capacitor discharging circuit; wherein, the pin of half-bridge driver chip includes respectively: a first pin, a second pin, a reference ground PGND, a third pin current sampling input CS, a fourth pin voltage detection VS, a fifth pin feedback input FB, a sixth pin chip power input VCC, a seventh pin X capacitor discharge XCD, an eighth pin high-end driver power input VCCH, a ninth pin half-bridge output HB and a tenth pin clamping capacitor access CR;
the secondary side circuit comprises an output circuit and a second feedback circuit;
the input end of the voltage input circuit is connected with the auxiliary winding, and the output end of the voltage input circuit is respectively connected with the fourth pin, the sixth pin and the eighth pin;
the high-voltage starting and X capacitor discharging circuit is connected between the seventh pin and the first end of the primary winding;
the ninth pin is connected with the second end of the primary winding;
the clamping circuit is connected between the tenth pin and the first end of the primary winding;
the current sampling circuit is connected among the first pin, the second pin and the third pin;
the output circuit is connected between the first end and the second end of the secondary winding;
the input end of the second feedback circuit is connected with the output circuit, the second feedback circuit feeds back to the primary side output through an optocoupler, the input end of the first feedback circuit senses the feedback input of the optocoupler, and the output end of the first feedback circuit is connected with the fifth pin.
2. The active clamping flyback half-bridge driver circuit of claim 1, wherein the first and second pins are connected inside a half-bridge driver chip of the close-packed gan power device.
3. The active clamping flyback half-bridge driver circuit of claim 1, wherein the half-bridge driver chip of the close-packed gan power device adopts a square bilateral flat leadless Package (PDFN) frame, and comprises: the power supply comprises a main control module, a first gallium nitride power tube and a second gallium nitride power tube;
the PDFN framework is internally provided with a first base island and a second base island which are separated by an insulating layer; the main control module and the second gallium nitride power tube are arranged in the first base island, and the first gallium nitride power tube is arranged in the second base island; the first to sixth pins are on one side close to the first base island, and the seventh to tenth pins are on one side close to the second base island; in the first base island, the second gallium nitride power tube is positioned above the main control module; a first gallium nitride power tube in the second base island and a second gallium nitride power tube in the first base island are horizontally arranged;
the main control module comprises a logic control circuit and a half-bridge driving circuit, the logic control circuit is connected with the half-bridge driving circuit, the first gallium nitride power tube and the second gallium nitride power tube are connected between the tenth pin and the first pin and the second pin in series, the driving output of the half-bridge driving circuit is respectively connected with the driving ends of the first gallium nitride power tube and the second gallium nitride power tube, and the source electrode of the first gallium nitride power tube is connected with the drain electrode of the second gallium nitride power tube and is connected to the ninth pin.
4. The active clamping flyback half-bridge driver circuit of claim 3, wherein the source of the first GaN power tube and the drain of the second GaN power tube are respectively directed toward an insulating layer that isolates the first and second base islands;
the drain electrode of the first gallium nitride power tube is connected with a tenth pin of the chip through routing inside the chip;
the source electrode of the first gallium nitride power tube and the drain electrode of the second gallium nitride power tube are respectively connected to the second base island through routing inside the chip and communicated with the ninth pin of the half-bridge driving chip through the second base island;
and the source electrode of the second gallium nitride power tube is connected to the first base island through the internal routing of the chip and is communicated with the first pin and the second pin of the half-bridge driving chip through the first base island.
5. The active clamping flyback half-bridge drive circuit of claim 3, wherein the pins of the chip are isolated by the insulating layer.
6. The active clamping flyback half bridge driver circuit of claim 3, wherein the master control module comprises: the power supply circuit comprises a power supply input end VCC, a high-voltage starting circuit input end HV, a ground end GND, a high-end driver power supply input end VCCH, a half-bridge output end HB, three input and output ends, a first driving signal output end GTH and a second driving signal output end GTL;
a power supply input end VCC of the main control module is connected with a sixth pin of the half-bridge driving chip through a wire bonding inside the chip;
three input and output ends of the main control module are respectively connected with the third pin, the fifth pin and the fourth pin of the half-bridge driving chip through internal routing of the chip;
the input end HV of the high-voltage starting circuit of the main control module is connected with the seventh pin of the half-bridge driving chip through the internal routing of the chip;
the ground end GND of the main control module is connected to the first base island through a wire bonding inside the chip and is communicated with the first pin and the second pin of the half-bridge driving chip through the first base island;
the half-bridge output end HB of the main control module is connected to the second base island through a wire bonding inside the chip and is communicated with a ninth pin of the half-bridge driving chip through the second base island;
the first driving signal output end GTH is connected with the grid electrode of the first gallium nitride power tube through a wire bonding inside the chip;
and the second driving signal output end GTL is connected with the grid electrode of the second gallium nitride power tube through a wire bonding inside the chip.
7. The active clamping flyback half-bridge driver circuit of claim 3 wherein the back side of the chip corresponding to the location of the first and second islands is bare copper.
8. The active clamping flyback half bridge driver circuit of claim 3, wherein the first end of the primary winding, the second end of the secondary winding, and the first end of the auxiliary winding are homonymous ends.
9. The active clamping flyback half-bridge driver circuit of claim 8,
the clamping circuit comprises a clamping capacitor, one end of the clamping capacitor is connected with the first end of the primary winding, and the other end of the clamping capacitor is connected with the third pin;
the current sampling circuit comprises a sampling resistor, one end of the sampling resistor is connected with the source electrode of the second gallium nitride power tube, and the other end of the sampling resistor is connected with the third pin;
the first feedback circuit comprises a phototriode and a capacitor, one end of the capacitor is connected with a collector of the phototriode and is connected with the fifth pin, and the other end of the capacitor is connected with an emitter of the phototriode and is connected with the first pin and the second pin.
10. The active clamping flyback half bridge driver circuit of claim 8, wherein the second feedback circuit comprises: the circuit comprises a first voltage-dividing resistor, a second voltage-dividing resistor, an optical coupler and a clamping diode;
the first voltage-dividing resistor and the second voltage-dividing resistor are connected in series between the output end of a secondary side circuit of the active clamping flyback half-bridge driving circuit and the ground, and a connection point between the first voltage-dividing resistor and the second voltage-dividing resistor is a secondary side feedback reference point;
the optical coupler is connected between the output end of the secondary side circuit and a secondary side feedback reference point in series;
the clamping diode is reversely connected between the secondary side feedback reference point and the ground.
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| CN202221206425.4U CN217545855U (en) | 2022-05-18 | 2022-05-18 | Active clamping flyback half-bridge drive circuit |
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| CN202221206425.4U CN217545855U (en) | 2022-05-18 | 2022-05-18 | Active clamping flyback half-bridge drive circuit |
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