CN217468474U

CN217468474U - Light emitting diode and light emitting device

Info

Publication number: CN217468474U
Application number: CN202220894715.6U
Authority: CN
Inventors: 张中英; 谢昆达; 杨欣欣; 韩涛; 温兆军; 林芳芳
Original assignee: Quanzhou Sanan Semiconductor Technology Co Ltd
Current assignee: Quanzhou Sanan Semiconductor Technology Co Ltd
Priority date: 2022-04-18
Filing date: 2022-04-18
Publication date: 2022-09-20
Anticipated expiration: 2032-04-18

Abstract

The utility model relates to the field of semiconductor technology, in particular to light emitting diode and illuminator. The light emitting diode includes: a semiconductor epitaxial stack including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer which are sequentially stacked; a current spreading layer on the second conductive type semiconductor layer; a first insulating layer comprising a first portion covering sidewalls of the semiconductor epitaxial stack and a second portion covering at least a portion of a surface of the current spreading layer, the first portion and the second portion having a first gap therebetween; a metal layer on the first insulating layer; the projection of the metal layer and the edge of the current expansion layer in the direction vertical to the semiconductor epitaxial lamination layer falls in the first gap. The utility model provides a light emitting diode has high reliability.

Description

Light emitting diode and light emitting device

Technical Field

The utility model relates to the field of semiconductor technology, in particular to light emitting diode and illuminator.

Background

A Light Emitting Diode (LED) includes different Light Emitting materials and Light Emitting components, and is a solid semiconductor Light Emitting device. The LED lamp has the advantages of low cost, low power consumption, high lighting effect, small volume, energy conservation, environmental protection, good photoelectric property and the like, and is widely applied to various scenes such as illumination, visible light communication, luminous display and the like.

SUMMERY OF THE UTILITY MODEL

The utility model provides a light emitting diode with high reliability.

The embodiment of the utility model provides an adopted technical scheme as follows:

particularly, an embodiment of the present invention provides a light emitting diode, including:

a semiconductor epitaxial stack including a first conductivity type semiconductor layer, a light emitting layer, and a second conductivity type semiconductor layer which are sequentially stacked;

a current spreading layer on the second conductive type semiconductor layer;

a first insulating layer comprising a first portion covering the sidewalls of the semiconductor epitaxial stack and a second portion covering at least a portion of the surface of the current spreading layer, the first and second portions having a first gap therebetween;

a metal layer on the first insulating layer;

the projection of the metal layer and the edge of the current expansion layer in the direction vertical to the semiconductor epitaxial lamination layer falls in the first gap.

Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts; in the following description, the drawings are illustrated in a schematic view, and the drawings are not intended to limit the present invention.

Fig. 1 is a schematic top view of an led according to an embodiment of the invention;

fig. 2 is a schematic side sectional view of a light emitting diode according to a first embodiment of the invention;

FIG. 2A is an enlarged schematic view of the structure in the dashed box of FIG. 2;

FIG. 2B is an enlarged schematic view of the structure of the second embodiment of the present invention in the dashed box of FIG. 2;

fig. 2C is an enlarged schematic view of a modified example of the first embodiment of the present invention, shown in a dashed box in fig. 2;

FIG. 2D is an enlarged schematic view of a structure of another modification of the first embodiment of the present invention in a dashed box in FIG. 2;

fig. 3 is a schematic side sectional view of a light emitting diode according to a third embodiment of the invention;

FIG. 3A is an enlarged schematic view of the structure in the dashed box of FIG. 3;

fig. 4 is a schematic cross-sectional view of a light emitting diode according to a fourth embodiment of the invention;

FIG. 5 is a schematic cross-sectional view of a fourth embodiment of the LED shown in FIG. 4;

fig. 6 is a schematic cross-sectional view of a light emitting diode according to a fifth embodiment of the invention;

fig. 7 is a schematic cross-sectional view of a fifth embodiment of a light emitting diode modification shown in fig. 6;

fig. 8 is a schematic top view of a part of a light emitting diode according to a sixth embodiment of the present invention;

fig. 9 is a schematic side view of a light emitting diode according to a sixth embodiment;

FIG. 9A is an enlarged schematic view of the structure in the dashed box of FIG. A;

FIG. 9B shows a first variation of the structure of the sixth embodiment of the present invention within the dashed box of FIG. 9;

FIG. 9C shows a second variation of the sixth embodiment of the present invention in the structure of FIG. 9 in dashed lines;

fig. 10 is a schematic side view of a light emitting diode according to a seventh embodiment of the invention.

FIG. 10A is an enlarged schematic view of the structure in the dashed box of FIG. 10;

FIG. 10B shows a first modification of the structure of FIG. 10 in a dashed box according to a seventh embodiment of the present invention;

fig. 11 is a schematic cross-sectional view of an led according to an eighth embodiment of the present invention;

FIG. 12 is a cross-sectional view of an LED according to the ninth embodiment of the present invention;

fig. 13 is a schematic cross-sectional view of a light emitting diode according to a tenth embodiment of the present invention;

FIG. 14 is a cross-sectional view of an LED according to an eleventh embodiment of the present invention;

fig. 15 is a schematic structural diagram of a light-emitting device according to the present invention.

Reference numerals:

10-a substrate; 11-upper surface; 12-lower surface; 20-a semiconductor epitaxial stack; 21-a first conductivity type semiconductor layer; 22-a light-emitting layer; 23-a second conductivity type semiconductor layer; 24-a recess; 30-an interfacial transition layer; 301-a first via structure; 302-a third via configuration; 40-a current spreading layer; 50-a first insulating layer; 51-first portion; 52-second part; 501-a second through hole structure; 502-a fourth via structure; 521-a fifth through hole structure; 60-a metal layer; 61-a metal reflective layer; 62-a metal barrier layer; 70-a second insulating layer; 701-a sixth through hole structure; 81-a first electrode; 82-a second electrode; 83-first pad electrode; 84-a second pad electrode; 85-top electrode; 86-a back electrode; 90-a third insulating layer; 901-a seventh via structure; 100-a bonding layer; 110-a conductive substrate; 120-a conductive connection layer; 130-a scaffold; 131-bottom; 131A-a mounting area; 131B-a first wire bond region; 131C-second bond wire area; 140-an encapsulation layer; 200-flip-chip light emitting diodes; d 1-first gap; d 2-second gap.

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments; the technical features designed in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other; all other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Different embodiments disclosed below may repeat use of the same reference symbols and/or designations. These iterations are for simplicity and clarity and are not intended to limit the particular relationship between the various embodiments and/or configurations discussed;

to achieve at least one of the above advantages or other advantages, an embodiment of the present invention provides a light emitting diode including: a semiconductor epitaxial stack 20, an interfacial transition layer 30, a first insulating layer 50, and a metal layer 60.

A semiconductor epitaxial stack 20 is disposed on the substrate 10. The substrate 10 may be a transparent substrate 10 or a non-transparent substrate 10 or a translucent substrate 10 having opposing upper and

lower surfaces

11, 12, wherein the transparent substrate 10 or the translucent substrate 10 may allow light radiated by the semiconductor epitaxial stack 20 to pass through the upper surface 11 of the substrate 10 to the lower surface 12 of the substrate 10 remote from the semiconductor epitaxial stack 20. For example, the substrate 10 may be a growth substrate for growing a semiconductor epitaxial stack 20, including: sapphire substrates, silicon nitride substrates, silicon substrates, gallium nitride substrates, aluminum nitride substrates, and the like. However, the embodiments of the present disclosure are not limited thereto. The thickness of the substrate 10 preferably does not exceed the length of the short side of the chip, and in some embodiments the thickness of the substrate 10 is below 300 μm, and may be, for example, 200 μm, 100 μm or 80 μm. Further, in some embodiments, the substrate 10 may be thinned or removed to form a thin film type chip.

The substrate 10 may include an uneven structure (not shown) formed on at least a portion of the upper surface 11 thereof, which may improve external light extraction efficiency and crystallinity of semiconductor layers constituting the semiconductor epitaxial stack 20. For example, a common illustration is to have a dome-shaped convex shape; alternatively, other various shapes are possible, such as a plateau, a cone, a triangular pyramid, a hexagonal pyramid, a cone-like, a triangular pyramid-like, a hexagonal pyramid-like, etc., or combinations thereof. Also, the uneven structure may be selectively formed at various regions, such as the lower surface 12 of the substrate 10 to improve light extraction efficiency, or may be omitted. In some embodiments, the material of the uneven structure may be the same as the material of the substrate 10 or different from the material of the substrate, and the refractive index is preferably lower than that of the substrate, so as to improve the light extraction efficiency of the chip; in some other embodiments, the uneven structure may also be a multi-layer structure, and different material layers have different refractive indexes, which will not be described herein.

And a semiconductor epitaxial stack 20 including a first conductivity type semiconductor layer 21, a light-emitting layer 22, and a second conductivity type semiconductor layer 23, which are sequentially stacked. The material of the semiconductor epitaxial stack comprises Al _x In _y Ga _(1-x-y) N or Al _x In _y Ga _(1-x-y) P, wherein x is more than or equal to 0, and y is more than or equal to 1; x + y is less than or equal to 1. Depending on the material of the light-emitting layer, the material of the semiconductor epitaxial stack is AlInGaP systemWhen listed, red light having a wavelength between 610nm and 650nm or yellow light having a wavelength between 550nm and 570nm may be emitted. When the material of the semiconductor epitaxial stack is of the InGaN series, blue or deep blue light with a wavelength between 400nm and 490nm or green light with a wavelength between 490nm and 550nm can be emitted. When the material of the semiconductor epitaxial stack is of the AlGaN series, UV light having a wavelength between 400nm and 250nm can be emitted. The light emitting layer 22 may be a Single Heterostructure (SH), a Double Heterostructure (DH), a double-side double heterostructure (DDH), or a Multiple Quantum Well (MQW). The material of the light emitting layer 22 may be an i-type, p-type or n-type semiconductor.

Before forming the first conductive type semiconductor layer 21, a buffer layer (not shown) may be formed on the upper surface 11 of the substrate 10 to improve lattice mismatch between the substrate 10 and the semiconductor epitaxial stack 20. The buffer layer may be composed of a material of gallium nitride (GaN) series.

It should be noted that the light emitting diode of the present invention is not limited to include only one semiconductor epitaxial stack 20, and may also include a plurality of semiconductor epitaxial stacks 20 on a substrate 10, wherein a conductive line structure may be provided between the plurality of semiconductor epitaxial stacks 20 to electrically connect the plurality of semiconductor epitaxial stacks 20 to each other in series, parallel, series-parallel, etc. on the substrate 10.

Optionally, a current spreading layer 40 may be further disposed on the semiconductor epitaxial stack 20 for spreading current, so as to make current distribution more uniform, reduce the operating voltage of the led, and improve the light emitting performance of the led. The current spreading layer 40 may be made of a transparent conductive material, which may include Indium Tin Oxide (ITO), Indium Zinc Oxide (IZO), indium oxide (InO), tin oxide (SnO), Cadmium Tin Oxide (CTO), Antimony Tin Oxide (ATO), Aluminum Zinc Oxide (AZO), Zinc Tin Oxide (ZTO), gallium doped zinc oxide (GZO), tungsten doped indium oxide (IWO), or zinc oxide (ZnO), but the disclosed embodiment is not limited thereto.

The thickness of the current spreading layer 40 is generally not limited, but may be about, as a preferred embodiment

To

A thickness within the range of (1), more preferably, may be

To

If the thickness of the current spreading layer 40 is too thick, light passing through the current spreading layer 40 is absorbed and loss occurs. Thus, the thickness of the current spreading layer 40 is generally limited to

The following.

A first insulating layer 50 is located on the semiconductor epitaxial stack 20, the first insulating layer 50 may be SiO ₂ 、SiN、SiO _x N _y 、TiO ₂ 、Si ₃ N ₄ 、Al ₂ O ₃ 、TiN、AlN、ZrO ₂ 、TiAlN、TiSiN、HfO ₂ 、TaO ₂ Or MgF ₂ Or a bragg reflector (DBR) formed by repeatedly stacking two or more materials. The first insulating layer 50 has different functions according to the disposed position, for example: the first insulating layer 50 covering the sidewall of the semiconductor epitaxial stack 20 may be used to prevent the conductive material from leaking and electrically connecting the first conductive type semiconductor layer 21, the light emitting layer 22 and the second conductive type semiconductor layer 23, thereby reducing the short circuit abnormality of the light emitting diode; another example is: a first insulating layer 50, which may be a reflective insulating material, is formed on a surface of the semiconductor epitaxial stack 20 adjacent to the second conductive type semiconductor layer 23, and may be used to reflect light and block different electrodes in the light emitting diode,the embodiments of the present disclosure are not limited thereto. The second insulating layer 70 has a patterned second via structure 501 thereon, so that the metal layer 60 can be electrically connected to the current spreading layer 40 through the second via structure 501. In order to make the first insulating layer 50 have better insulation protection and anti-leakage performance, in some preferred embodiments, the thickness of the first insulating layer 50 is selected to be between 50nm and 2400nm, for example, 200nm or more, or 300nm or more, or 1 μm or more. The diameter of the second via structure 501 may be 3 μm or more and 20 μm or less, and more preferably 6 μm or more and 12 μm or less, for example, if the diameter of the second via structure 501 is too small, the current crowding effect is easily caused, which leads to a voltage increase. The pitch of the adjacent second via structures 501 may be 10 μm or more and 50 μm or less.

An interface transition layer 30, which may be an insulating metal oxide or a stack of insulating metal oxides, is located on the semiconductor epitaxial stack 20; in the prior art, the metal layer 60 is usually directly connected with the insulating layer (SiO) ₂ ) The contact mode is a common structure, so that the adhesion force of the metal layer 60 on the insulating layer is insufficient, and the phenomenon that the metal layer 60 falls off is easy to occur. Preferably, the insulating metal oxide may include TiO ₂ 、ZrO ₂ 、HfO ₂ 、Ta ₂ O ₅ 、Al ₂ O ₃ 、Nb ₂ O ₅ 、Y ₂ O ₃ 、MgO、La ₂ O ₃ 、SrTiO ₃ 、BaTiO ₃ Or CeO ₂ The compactness of at least one of these materials is better for covering the side surface of the semiconductor epitaxial stacked layer 20, and the reliability of the chip is further improved.

The thickness of the interface transition layer 30 may be 3nm to 400nm to complete the film formation of the insulating metal oxide, so that the insulating metal oxide has a complete interface, thereby forming a good adhesion force on the interface contacting with the metal layer 60, and the thickness of the interface transition layer 30 formed of the insulating metal oxide may be increased within a certain range to improve the reliability of the metal layer 60, and as a preferred embodiment, in order to provide a more excellent adhesion property of the metal layer 60 on the interface transition layer 30, the thickness of the interface transition layer 30 is preferably 200nm or less, thereby effectively reducing the stress increase caused by an excessive thickness and the risk of other peeling of the metal layer 60. In some embodiments, the thickness of the interfacial transition layer 30 may be more than 10nm and less than 200nm to meet the actual production requirements; in other embodiments, the thickness of the interfacial transition layer 30 may be greater than or equal to 20nm and less than or equal to 100nm, or may be greater than or equal to 20nm and less than or equal to 50nm, so as to form a better optical film function. The interface transition layer 30 can be realized by vapor deposition, atomic layer deposition and other processes, for example, atomic layer deposition is adopted to form a better film forming state under the deposition thickness of 3 nm; in other embodiments, the interfacial transition layer 30 may have a refractive index above 1.5 and below 3.5; in combination with a certain thickness and refractive index, the interface transition layer 30 can not only improve the adhesion of the metal layer 60, but also form an optical function layer with a variable refractive index under the lamination of itself or the cooperation with the first insulating layer 50, so as to improve the light extraction efficiency. The interface transition layer 30 may have a patterned first via structure 301 thereon, such that the metal layer 60 may be electrically connected to the current spreading layer 40 through the first via structure 301. The diameter of the first via structure 301 may be 3 μm or more and 20 μm or less, and more preferably 6 μm or more and 12 μm or less, for example, if the diameter of the first via structure 301 is too small, it is easy to cause a current crowding effect, resulting in a voltage increase. The pitch of the adjacent first via structures 301 may be 10 μm or more and 50 μm or less.

In order to ensure the led to have better light emitting efficiency, the metal layer 60 covers a portion of the surface of the interface transition layer 30, and the metal layer 60 may include a metal reflective layer 61 made of a material including Ag, Al, Rh, and the like. The metal layer 60 may further include a metal barrier layer 62, wherein the metal barrier layer 62 covers a surface of the metal reflective layer 61, which may be understood as an upper surface and a sidewall edge, to prevent the metal reflective layer 61 from diffusing, and the material of the metal barrier layer 62 may include TiW, Cr, Pt, Ti, Ni, W, etc.

The light emitting diode further includes a second insulating layer 70 on the first insulating layer 50 and optionally covering a portion of the upper surface of the first insulating layer 50 and a portion of the upper surface and sidewalls of the metal layer 60, or covering a portion of the upper surface of the interface transition layer 30 and a portion of the upper surface and sidewalls of the metal layer 60. The second insulating layer 70 may be SiO ₂ 、SiN、SiO _x N _y 、TiO ₂ 、Si ₃ N ₄ 、Al ₂ O ₃ 、TiN、AlN、ZrO ₂ 、TiAlN、TiSiN、HfO ₂ 、TaO ₂ Or MgF ₂ Or a bragg reflector (DBR) formed by repeatedly stacking two or more materials; in some embodiments, the second insulating layer 70 may be an insulating reflective layer, and may be a multilayer film structure in which different high refractive index dielectric films and different low refractive index dielectric films are alternately stacked. Wherein, the material of the dielectric film with high refractive index can be TiO ₂ 、NB ₂ O ₅ 、TA ₂ O ₅ 、HfO ₂ 、ZrO ₂ Etc.; the material of the low-refractive dielectric film may be SiO ₂ 、MgF ₂ 、Al ₂ O ₅ SiON, etc. So configured, the second insulating layer 70 has better reflective performance and the light emitting diode has better light extraction efficiency, but the embodiment of the disclosure is not limited thereto, and the embodiment is also applicable to the first insulating layer 50 described above and the third insulating layer 90 described below. The second insulating layer 70 has a sixth patterned via structure 701 thereon, so that the metal electrode can be electrically connected to the metal layer 60 through the sixth patterned via structure 701. In order to provide the second insulating layer 70 with better insulation protection and anti-leakage performance, in some preferred embodiments, the thickness of the second insulating layer 70 is selected to be between 50nm and 2400 nm.

The light emitting diode further includes one or more first electrodes 81 on the first conductive type semiconductor layer 21 to be electrically connected to the first conductive type semiconductor layer 21, and one or more second electrodes 82 on the second conductive type semiconductor layer 23 to be electrically connected to the second conductive type semiconductor layer 23; for example, the first electrode 81 may be electrically connected to the first conductive type semiconductor layer 21 through some of the sixth via structures 701 on the second insulating layer 70, and the second electrode 82 may be electrically connected to the second conductive type semiconductor layer 23 through some of the sixth via structures 701 on the second insulating layer 70 and the metal layer 60. The first electrode 81 and the second electrode 82 may be formed simultaneously in a uniform process using the same material, for example, the first electrode 81 and the second electrode 82 may be metal electrodes using nickel, gold, chromium, titanium, platinum, palladium, rhodium, iridium, aluminum, tin, indium, tantalum, copper, cobalt, iron, ruthenium, zirconium, tungsten, molybdenum, and combinations of one or more thereof, but the embodiments of the disclosure are not limited thereto. The width of the sixth via structure 701 may be 3 μm or more and 20 μm or less, and more preferably 6 μm or more and 12 μm or less.

The light emitting diode further includes a first pad electrode 83, a second pad electrode 84, and a third insulating layer 90, the third insulating layer 90 is located on the second insulating layer 70, and the first pad electrode 83 and the second pad electrode 84 are disposed on the third insulating layer 90; the third insulating layer 90 has patterned seventh via structures 901 thereon, and the first pad electrode 83 may contact the first electrode 81 through some of the seventh via structures 901 on the third insulating layer 90 to be electrically connected to the first conductive type semiconductor layer 21, and the second pad electrode 84 may contact the second electrode 82 through some of the seventh via structures 901 on the third insulating layer 90 to be electrically connected to the second conductive type semiconductor layer 23. The third insulating layer 90 may be SiO ₂ 、SiN、SiO _x N _y 、TiO ₂ 、Si ₃ N ₄ 、Al ₂ O ₃ 、TiN、AlN、ZrO ₂ 、TiAlN、TiSiN、HfO ₂ 、TaO ₂ Or MgF ₂ One or two or more kinds of materialsA bragg reflector (DBR) formed by repeating a stack of materials, but the embodiments of the present disclosure are not limited thereto. The first pad electrode includes Ti, Al, Pt, Au, Ni, Sn, or an alloy of any combination thereof, or a laminate of any combination thereof. The second pad electrode includes Ti, Al, Pt, Au, Ni, Sn, or an alloy of any combination thereof, or a stack of any combination thereof.

In order to make the objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.

Fig. 1 is a schematic top view of a light emitting diode according to an embodiment of the invention. Fig. 2 is a schematic side sectional view of the light emitting diode of fig. 1. Fig. 2A shows an enlarged schematic view of the structure in the dashed box of fig. 2. It should be noted that the led of fig. 2 is shown along the sectional line a-a'.

Referring to fig. 1, fig. 2 and fig. 2A, the light emitting diode of the first embodiment includes at least one semiconductor epitaxial stack 20 disposed on a substrate 10, the semiconductor epitaxial stack 20 includes a first conductive type semiconductor layer 21, a light emitting layer 22 and a second conductive type semiconductor layer 23 stacked in sequence from bottom to top, the semiconductor epitaxial stack 20 includes one or more mesas, the mesas enable a portion of the second conductive type semiconductor layer 23 and the light emitting layer 22 to be removed to expose a portion of the surface of the first conductive type semiconductor layer 21, and the mesas may be located inside the semiconductor epitaxial stack 20, or in an edge region of the semiconductor epitaxial stack 20, or in both an inside and an edge region of the semiconductor epitaxial stack 20. The exposed upper surface of the first conductive type semiconductor layer 21 can be electrically connected to the first conductive type semiconductor layer 21.

With continued reference to fig. 2 and fig. 2A, a current spreading layer 40 for spreading current is disposed on the second conductive type semiconductor layer 23; the first insulating layer 50 covers the side wall, the edge of a part of the upper surface, and the surface of the current spreading layer 40 near the metal layer 60 (schematically covered with the upper surface of the current spreading layer 40 and the side wall thereof in fig. 2), and the first insulating layer 50 has a patterned second via structure 501, and a part of the upper surface of the current spreading layer 40 can be exposed through the second via structure 501; an interface transition layer 30 (not shown in fig. 1) covers an upper surface of the first insulating layer 50, in this embodiment, the interface transition layer 30 is made of an insulating metal oxide, and the interface transition layer 30 has a patterned first via structure 301, and a portion of an upper surface of the current spreading layer 40 can be exposed through the first via structure 301; the metal layer 60 includes a metal reflective layer 61 and a metal barrier layer 62, the metal reflective layer 61 is located above the semiconductor epitaxial stack 20, covers a portion of the interface transition layer 30, and is at least partially in contact with the current spreading layer 40 through the first via structure 301 and the second via structure 501, the metal barrier layer 62 is located on the metal reflective layer 61, covers a sidewall and a portion of an upper surface of the metal reflective layer 61, and can prevent a material of the metal reflective layer 61 from migrating; in the chip structure of the first embodiment, the adhesion of the metal layer 60 is effectively improved by using the insulating metal oxide as the interface transition layer 30 and making the insulating metal oxide directly contact with the metal reflective layer 61, and the omnidirectional reflector can be formed by using the first insulating layer 50 and the interface transition layer 30 (which are insulating metal oxides) as insulating layers and the metal layer 60 (the metal reflective layer 61); specifically, on one hand, the adhesive force between the metal layer 60 (metal reflection layer 61) and the first insulating layer 50 is increased, and on the other hand, an optical functional layer with a gradually-changed refractive index can be formed, so that the light extraction efficiency is improved, and moreover, due to the compactness of the insulating metal oxide, the side surface coating performance is better under the condition of matching with a certain thickness, so that the reliability of the light-emitting diode can be effectively improved;

with reference to fig. 2 and fig. 2A, the second insulating layer 70 is disposed on the first insulating layer 50, and in this embodiment, the second insulating layer 70 covers a portion of the upper surface of the interface transition layer 30 and a portion of the upper surface and the sidewall of the metal layer 60, the second insulating layer 70 has patterned sixth via structures 701, the second insulating layer 70 is respectively disposed with first electrodes 81 and second electrodes 82, the first electrodes 81 are electrically connected to the first conductive type semiconductor layer 21 at the exposed mesas through some of the sixth via structures 701, and the second electrodes 82 are electrically connected to the metal barrier layer 62 through some of the sixth via structures 701. A third insulating layer 90 on the second insulating layer 70, and the first and

second pad electrodes

83 and 84 disposed on the third insulating layer 90; the third insulating layer 90 has patterned seventh via structures 901 thereon, and the first pad electrode 83 may contact the first electrode 81 through some of the seventh via structures 901 on the second insulating layer 70 to be electrically connected to the first conductive type semiconductor layer 21, and the second pad electrode 84 may contact the second electrode 82 through some of the seventh via structures 901 on the second insulating layer 70 to be electrically connected to the second conductive type semiconductor layer 23.

Fig. 2B is an enlarged schematic view of the structure of the second embodiment of the present invention in the dashed box of fig. 2.

Referring to fig. 2 and fig. 2B, in this embodiment, the interface transition layer 30 and the first insulating layer 50 have the first via structure 301 and the second via structure 501 that are more sparse than the embodiment, so that the interface transition layer 30 has a larger area and a more complete area, and thus, the metal layer 60 has more and more continuous contact surfaces with the interface transition layer 30, which can effectively improve the adhesion of the metal layer 60, thereby improving the reliability of the light emitting diode.

In some embodiments, the interface of the interfacial transition layer 30 and the metal layer 60 may be formed of different insulating metal oxides to form continuous or discontinuous alternating surfaces. Fig. 2C is an enlarged schematic view of a modified example of the first embodiment of the present invention, shown in a dashed box in fig. 2; fig. 2D is an enlarged schematic view of a structure of another modification of the first embodiment of the present invention in a dashed box in fig. 2.

For example, referring to fig. 2 and fig. 2C, in the embodiment, the first insulating layer 50 is simultaneously covered with a plurality of interface transition layers 30 (only different materials in fig. 2 are schematically shown in fig. 2C) formed by different materials alternately, and the metal layer 60 covered thereon can effectively improve the adhesion of the metal layer 60 by simultaneously contacting the interface transition layers 30 formed by different materials, thereby improving the reliability of the light emitting diode.

Referring to fig. 2 and fig. 2D, in the embodiment, the first insulating layer 50 is covered with different numbers of interface transition layers 30 in different areas (only shown schematically as a single-layer and double-layer alternate structure in fig. 2C), and the interface transition layers 30 in different numbers of layers may be composed of interface transition layers 30 formed of the same material, or may be composed of interface transition layers 30 formed of different materials, and the metal layer 60 covered thereon may not only effectively improve the adhesion of the metal layer 60 by contacting with the interface transition layers 30 formed of different insulating metal oxides at the same time, but also may further improve the adhesion of the metal layer 60 on the entire interface transition layer 30 due to the "rough" surface formed by the height difference in different areas, thereby improving the reliability of the light emitting diode.

Fig. 3 is a schematic side sectional view of a light emitting diode according to a third embodiment of the invention. Fig. 3A shows an enlarged schematic view of the structure in the dashed box of fig. 3. It should be noted that the led of fig. 3 is shown along the sectional line a-a'.

Referring to fig. 1, fig. 3 and fig. 3A, the light emitting diode of the third embodiment includes at least one semiconductor epitaxial stack 20 disposed on a substrate 10, and the structure of the portion is substantially the same as that of the first embodiment and is not described herein again;

with continued reference to fig. 3 and fig. 3A, the first insulating layer 50 covers the upper surface and the sidewall of the semiconductor epitaxial stack 20, wherein in this embodiment, the first insulating layer 50 has a patterned fourth via structure 502, the current spreading layer 40 covers the surface of the first insulating layer 50 close to the metal layer (schematically, the upper surface and the sidewall of the first insulating layer 50 cover in fig. 4), and is in contact with the second conductive type semiconductor layer 23 through the fourth via structure 502, the interface transition layer 30 covers the upper surface and the sidewall of the current spreading layer 40, and the interface transition layer 30 has a patterned third via structure 302, so that the metal layer 60 covering the interface transition layer 30 is in contact with the current spreading layer 40 through the third via structure 302, and the metal layer 60 includes a metal reflective layer 61 and a metal blocking layer 62, the metal barrier layer 62 is located on the metal reflective layer 61, and covers the sidewall and a portion of the upper surface of the metal reflective layer 61. In the third embodiment, specific reference may be made to the arrangement of the second insulating layer 70, the connection electrodes (schematically shown in fig. 4 as the first electrode 81 and the second electrode 82), the third insulating layer 90, and the pad electrodes (schematically shown in fig. 4 as the first pad electrode 83 and the second pad electrode 84), which are shown in fig. 2 and fig. 2A and basically consistent with the first embodiment, and redundant description is not repeated here.

In the chip structure of the third embodiment, compared with the first embodiment, the first insulating layer 50 has more portions directly contacting the semiconductor epitaxial stacked layer 20, and the refractive index difference between the first insulating layer 50 and the semiconductor epitaxial stacked layer 20 is larger than that between the current spreading layer 40 and the semiconductor epitaxial stacked layer 20, so that the light reflection effect is more excellent; furthermore, referring to fig. 4, the first insulating layer 50 and the interface transition layer 30 can also be formed with offset complementary structures, so as to further improve the light extraction efficiency of the chip, and make the omnidirectional reflector formed by the first insulating layer 50, the interface transition layer 30 (which is an insulating metal oxide) as the insulating layer, and the metal layer 60 have a better refraction effect.

Fig. 4 is a schematic cross-sectional view of a light emitting diode according to a fourth embodiment of the invention; fig. 5 is a schematic cross-sectional view of a variation of the fourth embodiment of the light emitting diode shown in fig. 4.

Referring to fig. 4, the light emitting diode of the fourth embodiment may include, from top to bottom: a top electrode 85, a semiconductor epitaxial stack 20, a current spreading layer 40, a first insulating layer 50, an interface transition layer 30, a metal layer 60, a bonding layer 100, a conductive substrate 110, a back electrode 86; the semiconductor epitaxial stack 20 may include, from top to bottom, a first conductivity-type semiconductor layer 21, a light emitting layer 22, and a second conductivity-type semiconductor layer 23, the metal layer 60 may include, from top to bottom, a metal reflective layer 61 and a metal barrier layer 62, and the bonding layer 100 is used to bond the semiconductor epitaxial stack 20 to the conductive substrate 110, and may be Au-Au bonding, Au-In bonding, or the like.

Referring to fig. 5, in some embodiments, the current spreading layers 40 and the first insulating layers 50 may be alternately arranged on the semiconductor epitaxial stack 20 or the current spreading layers 40 may not be arranged, and other structures are substantially the same as the fourth embodiment.

Fig. 6 is a schematic cross-sectional view of a light emitting diode according to a fifth embodiment of the invention. Fig. 7 is a schematic cross-sectional view of a fifth embodiment of a light emitting diode variation shown in fig. 6.

Referring to fig. 6, the light emitting diode of the fifth embodiment may include, from top to bottom: the semiconductor epitaxial stack 20, the current spreading layer 40, the first insulating layer 50, the interface transition layer 30, the metal layer 60, the second insulating layer 70, the conductive connection layer 120, the conductive substrate 110, the first electrode 81, and the second electrode 82.

Specifically, the semiconductor epitaxial stack 20 may include, from top to bottom, a first conductivity-type semiconductor layer 21, a light-emitting layer 22, and a second conductivity-type semiconductor layer 23, and has at least one recess 24 (only 1 recess 24 is schematically shown in fig. 6), the recess 24 extending from a lower surface of the semiconductor epitaxial stack 20 to the first conductivity-type semiconductor layer 21 through the second conductivity-type semiconductor layer 23, the light-emitting layer 22 in this order; a first insulating layer 50 is formed on the surface of the current spreading layer 40 and extends to cover the side wall of the groove 24, the first insulating layer 50 has a patterned second via structure 501 to expose a part of the surface of the current spreading layer 40, the interface transition layer 30 covers the surface of the first insulating layer 50, and the interface transition layer 30 has a patterned first via structure 301; the metal layer 60 comprises a metal reflective layer 61 and a metal barrier layer 62, the metal reflective layer 61 is located on the interface transition layer 30, and covers a part of the interface transition layer 30 to improve the adhesion of the metal layer 60, and the metal reflective layer 61 is in contact with the exposed current spreading layer 40 through the first via structure 301 and the second via structure 501; the metal barrier layer 62 is located on the metal reflective layer 61, covers the sidewall and a part of the upper surface of the metal reflective layer 61, and exposes a part of the surface to form a second electrode 82;

and the second insulating layer 70 is disposed on the surface of the metal barrier layer 62 on the side away from the semiconductor epitaxial stack 20, and covers the sidewall of the recess 24, in this embodiment, the interface transition layer 30 is an insulating metal oxide, so that the first insulating layer 50, the interface transition layer 30 and the second insulating layer 70 are sequentially covered on the sidewall of the recess 24 from inside to outside. The conductive connection layer 120 is located on the surface of the second insulating layer 70 and fills the recess 24 to be electrically connected to the first conductive type semiconductor layer 21 while also containing a bonding material for bonding the conductive substrate 110. The conductive substrate 110 is disposed on a surface of the conductive connection layer 120 away from one side of the semiconductor epitaxial stack 20; the first electrode 81 is disposed on a surface of the conductive substrate 110 on a side away from the semiconductor epitaxial stack 20, so as to form an electrical connection with the first conductivity-type semiconductor layer 21 sequentially through the conductive substrate 110 and the conductive connection layer 120; the second electrode 82 is disposed on the surface of the exposed metal barrier layer 62, so as to be electrically connected to the second conductive type semiconductor layer 23 through the metal barrier layer 62, the metal reflective layer 61, the current spreading layer 40 in sequence, and the metal barrier layer 62 is electrically isolated from the conductive connection layer 120 through the second insulating layer 70.

The modification shown in fig. 7 is different from the fifth embodiment in that: the interface transition layer 30, the current spreading layer 40 and the first insulating layer 50 are configured as the structure in the third embodiment, and are not described herein in detail.

Fig. 8 is a schematic top view of a part of a light emitting diode according to a sixth embodiment of the present invention. Fig. 9 is a schematic side view of a light emitting diode according to a sixth embodiment. Fig. 9A shows an enlarged schematic view of the structure in the dashed box of fig. 9.

Referring to fig. 8, fig. 9 and fig. 9A, the light emitting diode of the sixth embodiment includes at least one semiconductor epitaxial stack 20 disposed on a substrate 10, which is substantially the same as the first embodiment and will not be described herein again.

With continuing reference to fig. 9 and 9A, a current spreading layer 40 for spreading current is disposed on the second conductive semiconductor layer 23, the first insulating layer 50 includes a first portion 51 covering a sidewall of the semiconductor epitaxial stack 20, an edge of a portion of an upper surface, and a second portion 52 covering a portion of the upper surface of the current spreading layer 40 near the metal layer 60, and a first gap d1 is formed between the first portion 51 and the second portion 52; the metal layer 60 includes a metal reflective layer 61, and a projection of the metal reflective layer 61 and an edge of the current spreading layer 40 in a direction perpendicular to the semiconductor epitaxial stack 20 falls within the first gap d1, in this embodiment, a projection of the current spreading layer 40 in a direction perpendicular to the semiconductor epitaxial stack 20 falls within a range of the metal reflective layer 61, so that the metal reflective layer 61 can be in contact with the semiconductor epitaxial stack 20 at an outer portion of the edge and in contact with the current spreading layer 40 at an inner portion of the edge as shown in fig. 9A, on one hand, the problem that the edge of the metal reflective layer 61 has poor adhesion and is easy to fall off when covering the first insulating layer 50 is improved, and on the other hand, compared with the case that the current spreading layer 40 is covered by the second portion 52 so that the metal reflective layer 61 directly contacts the exposed second conductive type semiconductor layer 23, the current spreading layer 40 has a larger area, so that the chip has better current spreading performance, and can effectively reduce the damage of the light emitting diode caused by electrostatic Discharge (ESD), on the other hand, the chip structure forms a first portion 51 which is separated by a first gap d1 and is positioned outside the first gap d1 to protect the periphery of the upper surface and the outer ring area of the side wall of the semiconductor epitaxial lamination 20, and a second portion 52 is used as the inner ring area positioned in the middle part of the upper surface of the semiconductor epitaxial lamination 20, so that a moat effect is formed, the boundary of the MESA is effectively protected, and the reliability of the light emitting diode is improved. In some embodiments, the distance between the first gaps d1 may be greater than or equal to 4 μm and less than or equal to 20 μm, and the distance is selected within the range, so as to effectively reduce the damage of the light emitting diode due to Electro-Static Discharge (ESD), and to better improve the photoelectric performance of the light emitting diode.

With continued reference to fig. 9 and fig. 9A, the second portion 52 has a patterned fifth via structure 521, and a portion of the upper surface of the current spreading layer 40 can be exposed through the fifth via structure 521; the metal reflective layer 61 is located above the semiconductor epitaxial stack 20, covers part of the interface transition layer 30, and at least partially contacts the current spreading layer 40 through a fifth via structure 521, a second gap d2 is formed between an edge of the metal reflective layer 61 projected in a direction perpendicular to the semiconductor epitaxial stack 20 and an edge of the first portion 51 adjacent to one side of the metal reflective layer 61 projected in the direction perpendicular to the semiconductor epitaxial stack 20, and a pitch of the second gap d2 may be greater than or equal to 0.5 μm and less than or equal to 5 μm, or greater than or equal to 1 μm and less than or equal to 5 μm, or greater than or equal to 2 μm and less than or equal to 5 μm, or greater than or equal to 3 μm and less than or equal to 5 μm. When the edge of the metal reflective layer 61 is located on the first portion 51 of the first insulating layer 50, the metal reflective layer 61 may be at risk of falling off, and the metal reflective layer 61 may be effectively prevented from covering the surface of the first portion 51 of the first insulating layer 50 by controlling the gap. The metal blocking layer 62, the second insulating layer 70, the connection electrodes (schematically shown in fig. 9 by the first electrode 81 and the second electrode 82), the third insulating layer 90, and the pad electrodes (schematically shown in fig. 9 by the first pad electrode 83 and the second pad electrode 84) in the sixth embodiment may specifically refer to those shown in fig. 9 and fig. 9A, which are substantially the same as the first embodiment, and of course, the metal blocking layer 62 may refer to the arrangement shown in the figure, or may have its edge not covered on the surface of the first insulating layer 50, but has a similar arrangement with the metal reflective layer 61, i.e., its edge is covered on the current spreading layer 40 and/or the semiconductor epitaxial stack 20, which is not described herein in detail.

Fig. 9B shows a first modification of the structure of the sixth embodiment of the present invention in the dashed line frame of fig. 9.

Referring to fig. 9 and 9B, in this embodiment, the first insulating layer 50 may be covered with an interface transition layer 30 to improve the adhesion of the metal reflective layer 61.

Fig. 9C shows a second modification of the sixth embodiment of the present invention, which is shown in a dashed box in fig. 9.

Referring to fig. 9 and 9C, in this embodiment, the current spreading layer 40 may have through holes exposing the surface of the second conductive type semiconductor layer 23, and the series of through holes are preferably distributed to be staggered with the fifth through hole structure 521 on the second portion 52 of the first insulating layer 50, so as to reduce light absorption of the current spreading layer 40, thereby improving the light extraction efficiency of the light emitting diode.

Fig. 10 is a schematic side view of a light emitting diode according to a seventh embodiment of the invention. Fig. 10A shows an enlarged schematic view of the structure in the dashed box of fig. 10.

Referring to fig. 10 and 10A together, a difference between the seventh embodiment and the sixth embodiment is that the projection of the metal reflective layer 61 in the direction perpendicular to the semiconductor epitaxial stack 20 falls within the range of the current spreading layer 40, so that the metal reflective layer 61 can contact the current spreading layer 40 at the edge thereof as shown in fig. 10A, thereby improving the problem that the edge of the metal reflective layer 61 has poor adhesion and is easy to fall off when covering the first insulating layer 50, compared with the sixth embodiment, since it has a larger area of the current spreading layer 40, it has a better effect in effectively reducing electrostatic Discharge (ESD), and the current spreading layer 40 has a light absorption problem, which results in a relative reduction in light extraction efficiency.

Fig. 10B shows a first modification of the seventh embodiment of the present invention, which is a dashed-line frame in fig. 10.

Referring to fig. 10 and fig. 10B, in this embodiment, the first insulating layer 50 may be covered with an interface transition layer 30 to improve the adhesion of the metal reflective layer 61.

Fig. 11 is a schematic cross-sectional view of an led according to an eighth embodiment of the invention.

Referring to fig. 11, the light emitting diode of the eighth embodiment may include, from top to bottom: a top electrode 85, a semiconductor epitaxial stack 20, a current spreading layer 40, a first insulating layer 50, a metal layer 60, a bonding layer 100, a conductive substrate 110, a back electrode 86; it is basically the same as the structure of the fourth embodiment, except that: the metal layer 60 is a metal reflective layer 61 covered with a metal barrier layer 62, the first insulating layer 50 includes a first portion 51 covering an edge of a part of the upper surface of the semiconductor epitaxial stack 20, and a second portion 52 covering a part of the upper surface of the current spreading layer 40 on a side close to the metal layer 60, a first gap d1 is formed between the first portion 51 and the second portion 52, a projection of the metal layer 60 and an edge of the current spreading layer 40 in a direction perpendicular to the semiconductor epitaxial stack 20 falls within the first gap d1, in this embodiment, a projection of the current spreading layer 40 in a direction perpendicular to the semiconductor epitaxial stack 20 falls within a range of the metal reflective layer 61, in the chip structure of this embodiment, an edge portion of the metal reflective layer 61 is compared with a direct contact of the current spreading layer 40, the direct contact with the semiconductor epitaxial stack 20 may make the adhesion of the metal reflective layer 61 more excellent.

Fig. 12 is a schematic cross-sectional view of a light emitting diode according to a ninth embodiment of the invention.

Referring to fig. 11 and 12, the difference between the ninth embodiment and the eighth embodiment is that the projection of the metal reflective layer 61 in the direction perpendicular to the semiconductor epitaxial stack 20 falls within the range of the current spreading layer 40, in the chip structure of this embodiment, the edge portion of the metal reflective layer 61 is in direct contact with the current spreading layer 40, so that the adhesion of the metal reflective layer 61 is better than that of the first insulating layer 50, and the coverage area of the current spreading layer 40 is larger under the structure, so that the current spreading effect is better.

Fig. 13 is a schematic cross-sectional view of a light emitting diode according to a tenth embodiment of the invention.

Referring to fig. 13, the light emitting diode of the tenth embodiment includes, from top to bottom, a semiconductor epitaxial stack 20, a current spreading layer 40, a first insulating layer 50, a metal reflective layer 61, a second insulating layer 70, a conductive connection layer 120, a conductive substrate 110, a first electrode 81, and a second electrode 82; which substantially corresponds to the structure of the fifth embodiment, except that the first insulating layer 50 includes a first portion 51 covering the sidewall of the semiconductor epitaxial stack 20, the edge of a part of the upper surface, and a second portion 52 covering the upper surface of a part of the current spreading layer 40 on the side close to the metal layer 60, and the first portion 51 and the second portion 52 have a first gap d1 therebetween, and the projection of the metal reflection layer 61 and the edge of the current spreading layer 40 in the direction perpendicular to the semiconductor epitaxial stack 20 falls within the first gap d1, in this embodiment, the projection of the current spreading layer 40 in the direction perpendicular to the semiconductor epitaxial stack 20 falls within the range of the metal reflection layer 61, and optionally, an interface transition layer is provided, and the remaining structures can be adaptively arranged with reference to the light emitting diode structure of the fifth embodiment in fig. 13, will not be described in detail herein.

Fig. 14 is a schematic cross-sectional view of a light emitting diode according to an eleventh embodiment of the invention.

Referring to fig. 13 and 14, the difference between the eleventh embodiment and the tenth embodiment is that the projection of the metal reflective layer 61 in the direction perpendicular to the semiconductor epitaxial stack 20 falls within the range of the current spreading layer 40.

It should be noted that, in the several embodiments listed in the above embodiments and modifications, various features shown in the embodiments may be obviously combined with each other to form a new technical solution, and thus, redundant description is not repeated herein.

In summary, compared with the prior art, the light emitting diode provided by the invention has higher reliability and structural stability.

The light emitting diode of the present invention can be applied to a light emitting device or a display device. The light emitting device can be used in, but not limited to, cob (chip on board) lighting, UV ultraviolet, bulb lamp, flexible filament lamp, or the like. Wherein the display device may be a backlight display or an RGB direct display device.

The light emitting diode of the invention can be a flip light emitting diode, and the pad electrode can be connected to other application type circuit substrates by adopting a solder paste material through reflow soldering and high-temperature treatment processes and manufactured into a display device, such as a backlight display or an RGB display screen.

According to one aspect of the present application, there is provided a light emitting device, such as a vehicle light, a plant light, etc., each comprising a support, including but not limited to a COB support or a COG support only, an SMD support, etc., and a flip chip led of the present application secured to the support.

As an embodiment, referring to fig. 15, the light emitting device includes a support 130, a packaging layer 140, and a flip-chip light emitting diode 200, where the flip-chip light emitting diode 200 in this embodiment may be the light emitting diode in the foregoing embodiment.

Preferably, the support 130 is optionally a flat type, or a reflective cup is disposed around an area of the support 130 for mounting the flip-chip light emitting diode 200, and the reflective cup defines a space for accommodating the flip-chip light emitting diode 200.

Referring to fig. 15, the frame 130 includes a bottom 131 and a sidewall 132, the sidewall 132 is located around an area where the flip-chip light emitting diode 200 is mounted to form a reflective cup structure, wherein a mounting area 131A, a first wire bonding area 131B and a second wire bonding area 131C are disposed on an upper surface of the bottom 131, the first wire bonding area 131B and the second wire bonding area 131C are electrically isolated from each other, the flip-chip light emitting diode 200 is mounted on the mounting area 131A and is respectively connected to the first wire bonding area 131B and the second wire bonding area 131C through a first pad electrode 83 and a second pad electrode 84, and the encapsulation layer 140 encapsulates the flip-chip light emitting diode 200 on the frame 130.

For example, the surfaces of the first pad electrode 83 and the second pad electrode 84 of the flip-chip light emitting diode 200 may be plated with a solderable metal layer, such as a conductive solder paste, and the upper surfaces of the first wire bonding area 131B and the second wire bonding area 131C may also be provided with a metal electrode, so that the flip-chip may be soldered to the corresponding wire bonding areas by eutectic soldering or solder paste.

Preferably, the flip-chip light emitting diode 200 is applied to a backlight display or an RGB display panel, and the small-sized flip-chip light emitting diode 200 is integrally mounted on an application substrate or a package substrate in a number of hundreds, thousands or tens of thousands to form a light emitting source portion of the backlight display device or the RGB display device.

Although terms such as a substrate, a semiconductor epitaxial stack, a first conductive type semiconductor layer, a light emitting layer, a second conductive type semiconductor layer, a current spreading layer, a metal layer, a bonding layer, a conductive substrate, etc. are used more often herein, the possibility of using other terms is not excluded. These terms are used merely to more conveniently describe and explain the nature of the present invention; they are to be construed as being without limitation to any additional limitations that may be imposed by the spirit of the present invention; the terms "first," "second," and the like in the description and in the claims, and in the drawings, if any, are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light emitting diode comprising:

a semiconductor epitaxial stack (20) including a first conductivity type semiconductor layer (21), a light-emitting layer (22), and a second conductivity type semiconductor layer (23) which are sequentially stacked;

a current spreading layer (40) on the second conductive type semiconductor layer (23);

a first insulating layer (50) comprising a first portion (51) covering sidewalls of the semiconductor epitaxial stack (20) and a second portion (52) covering at least part of a surface of the current spreading layer (40), the first portion (51) and the second portion (52) having a first gap (d1) therebetween;

a metal layer (60) on the first insulating layer (50);

the projection of the metal layer (60) and the edge of the current spreading layer (40) in the direction perpendicular to the semiconductor epitaxial stack (20) falls within the first gap (d 1).

2. The led of claim 1, wherein: the second part (52) is provided with a patterned fifth through hole structure (521), and part of the metal layer (60) is in contact with the current spreading layer (40) through part of the fifth through hole structure (521).

3. The led of claim 1, wherein: the pitch of the first gap (d1) is 4 to 20 [ mu ] m.

4. The led of claim 1, wherein: a second gap (d2) is arranged between the projected edge of the metal layer (60) in the direction vertical to the semiconductor epitaxial stack (20) and the projected edge of the first part (51) close to one side of the metal layer (60) in the direction vertical to the semiconductor epitaxial stack (20).

5. The light-emitting diode according to claim 4, wherein: the pitch of the second gap (d2) is 0.5 [ mu ] m or more.

6. The light-emitting diode according to any one of claims 1 to 5, wherein: the projection of the metal layer (60) in the direction perpendicular to the semiconductor epitaxial stack (20) falls within the region of the current spreading layer (40).

7. The light-emitting diode according to any one of claims 1 to 5, wherein: the projection of the current spreading layer (40) in the direction perpendicular to the semiconductor epitaxial stack (20) falls within the range of the metal layer (60).

8. The led of claim 1, wherein: the metal layer (60) comprises a metal reflecting layer (61) and a metal blocking layer (62), and the metal blocking layer (62) covers the upper surface and the side wall of the metal reflecting layer (61).

9. The led of claim 1, wherein: the first insulating layer (50) comprises a layer of a low refractive index material.

10. A light emitting device having the light emitting diode according to any one of claims 1 to 9.