CN115274964A - Light emitting diode and light emitting device - Google Patents
Light emitting diode and light emitting device Download PDFInfo
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- CN115274964A CN115274964A CN202211208152.1A CN202211208152A CN115274964A CN 115274964 A CN115274964 A CN 115274964A CN 202211208152 A CN202211208152 A CN 202211208152A CN 115274964 A CN115274964 A CN 115274964A
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- 239000004065 semiconductor Substances 0.000 claims abstract description 142
- 238000003475 lamination Methods 0.000 claims abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 201
- 230000000694 effects Effects 0.000 description 19
- 239000000758 substrate Substances 0.000 description 16
- 230000001965 increasing effect Effects 0.000 description 9
- 230000007480 spreading Effects 0.000 description 9
- 238000003892 spreading Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000009792 diffusion process Methods 0.000 description 6
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 description 2
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000012811 non-conductive material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- SKRWFPLZQAAQSU-UHFFFAOYSA-N stibanylidynetin;hydrate Chemical compound O.[Sn].[Sb] SKRWFPLZQAAQSU-UHFFFAOYSA-N 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- GSWGDDYIUCWADU-UHFFFAOYSA-N aluminum magnesium oxygen(2-) Chemical compound [O--].[Mg++].[Al+3] GSWGDDYIUCWADU-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- YQNQTEBHHUSESQ-UHFFFAOYSA-N lithium aluminate Chemical compound [Li+].[O-][Al]=O YQNQTEBHHUSESQ-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 1
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/42—Transparent materials
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention relates to the technical field of semiconductor manufacturing, in particular to a light emitting diode and a light emitting device, wherein the light emitting diode comprises a semiconductor lamination, a transparent conducting layer, a first electrode and a second electrode, the semiconductor lamination comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer which are sequentially laminated, the transparent conducting layer is positioned on the second semiconductor layer, the first electrode is positioned on the first semiconductor layer, the second electrode is positioned on the transparent conducting layer, the light emitting diode is overlooked from the upper part of the light emitting diode towards the semiconductor lamination, the transparent conducting layer is provided with a near edge and a far edge, the distance from the near edge to the first electrode is smaller than that from the far edge to the first electrode, and the distance from the near edge to the edge of the second semiconductor layer is smaller than that from the far edge to the edge of the second semiconductor layer. Therefore, the external quantum efficiency and the electro-optic conversion efficiency of the light emitting diode can be improved, and the light emitting performance is enhanced.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing technologies, and in particular, to a light emitting diode and a light emitting device.
Background
A Light Emitting Diode (LED) is a semiconductor Light Emitting device, generally made of a semiconductor such as GaN, gaAs, gaP, gaAsP, etc., and has a PN junction with a Light Emitting property at the core. LEDs have the advantages of high luminous intensity, high efficiency, small size, long service life, etc., and are considered to be one of the most promising light sources currently. The LED is widely applied to the fields of illumination, monitoring and commanding, high-definition broadcasting, high-end cinema, office display, conference interaction, virtual reality and the like.
In LED structures, indium Tin Oxide (ITO) is often used as a transparent conductive layer, and the ITO assumes the function of spreading the current laterally. The larger the area of ITO, the wider the current lateral diffusion, the larger the number of photons emitted from the light-emitting layer per unit time, and the higher the Internal Quantum Efficiency (IQE). In the current design of an LED chip, the effective light emitting area of a quantum well is increased by basically increasing the area of ITO (indium tin oxide), so that the final light emitting of an LED structure is increased. However, the actual light emission is determined by External Quantum Efficiency (EQE), and if the photons emitted from the light emitting layer cannot be effectively extracted, the IQE is meaningless, so if the light shielding effect of the increased ITO area on the light is greater than the light emission effect caused by the lateral diffusion of the current, the EQE is rather reduced. Therefore, how to raise the EQE of an LED structure is a technical problem that needs to be solved by those skilled in the art.
Disclosure of Invention
The invention provides a light-emitting diode which comprises a semiconductor lamination layer, a transparent conducting layer, a first electrode and a second electrode.
The semiconductor lamination layer is provided with a lower surface and an upper surface which are opposite, and the semiconductor lamination layer sequentially comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer from the lower surface to the upper surface. The transparent conductive layer is located on the second semiconductor layer. The first electrode is located on the first semiconductor layer. The second electrode is located on the transparent conductive layer. The transparent conductive layer has a near side and a far side, the distance from the near side to the first electrode is smaller than the distance from the far side to the first electrode, and the distance from the near side to the edge of the second semiconductor layer is smaller than the distance from the far side to the edge of the second semiconductor layer.
In some embodiments, the shortest distance of the transparent conductive layer to the first electrode is the distance of the proximal edge to the first electrode.
In some embodiments, the distal edge is the other edge than the proximal edge of all edges of the transparent conductive layer.
In some embodiments, a shortest distance of the proximal edge to an edge of the second semiconductor layer is less than at least 80% of a shortest distance of the distal edge to an edge of the second semiconductor layer.
In some embodiments, the shortest distance from the proximal edge to the edge of the second semiconductor layer is less than the shortest distance from the distal edge to the edge of the second semiconductor layer.
In some embodiments, the shortest distance from the proximal edge to the edge of the second semiconductor layer ranges from 2 to 10 micrometers.
In some embodiments, the shortest distance from the distal edge to the edge of the second semiconductor layer ranges from 3 to 30 micrometers.
In some embodiments, looking down from above the light emitting diode toward the semiconductor stack, the transparent conductive layer has four sides, which are sequentially defined as a first side, a second side, a third side, and a fourth side in a surrounding direction, a shortest distance from the first side to an edge of the second semiconductor layer is a first distance, a shortest distance from the second side to an edge of the second semiconductor layer is a second distance, a shortest distance from the third side to an edge of the second semiconductor layer is a third distance, and a shortest distance from the fourth side to an edge of the second semiconductor layer is a fourth distance, wherein the first distance, the second distance, and the third distance are greater than the fourth distance, the fourth side is closer to the first electrode than the first side, the second side, and the third side, the fourth side is a near side of the transparent conductive layer, and the first side, the second side, and the third side are far sides of the transparent conductive layer.
In some embodiments, the first distance, the second distance, and the third distance are all the same.
In some embodiments, the fourth distance is 1 to 28 micrometers less than the first distance.
In some embodiments, looking down from above the light emitting diode toward the semiconductor stack, the fourth side comprises an arc-shaped edge and a long edge, the third side comprises a short edge and a lower long edge, the two ends of the arc-shaped edge are respectively connected with the first side and the long edge, the two ends of the long edge are respectively connected with the arc-shaped edge and the short edge, the two ends of the short edge are respectively connected with the long edge and the lower long edge, the two ends of the lower long edge are respectively connected with the short edge and the second side, and the short edge protrudes out of the long edge.
In some embodiments, a first perpendicular distance from the long side to the second side is smaller than a second perpendicular distance from the short side to the second side, looking down from above the light emitting diode towards the stack of semiconductor layers.
In some embodiments, the shortest distance of the long side to the edge of the second semiconductor layer is less than the shortest distance of the short side to the edge of the second semiconductor layer.
In some embodiments, the first vertical distance is 1 to 25 micrometers shorter than the second vertical distance.
In some embodiments, the first electrode comprises a first start portion and a first extension portion, the first start portion is connected with the first extension portion, the second electrode comprises a second start portion and a second extension portion, the second start portion is connected with the second extension portion, the first extension portion extends from the first start portion in a direction towards the second electrode, and the second extension portion extends from the second start portion in a direction towards the first start portion.
In some embodiments, when viewed from above the light emitting diode toward the semiconductor stacked layer, a coverage area of the transparent conductive layer is gradually reduced from the second electrode to the first electrode along an extending direction of the second extending portion.
In some embodiments, the first extension portion has a bar structure.
In some embodiments, the current density of the light emitting diode is less than or equal to 0.5A/mm 2 。
The invention also provides a light-emitting device which adopts the light-emitting diode provided by any one of the embodiments.
According to the light emitting diode and the light emitting device provided by the embodiment of the invention, the area of the transparent conductive layer is optimized by enlarging the distance from the far edge of the transparent conductive layer far away from the first electrode to the edge of the second semiconductor layer, the existing design direction for maximizing the ITO area is replaced, the EQE (external quantum efficiency) and the WPE (electro-optic conversion efficiency) of the light emitting diode can be improved, and the light emitting performance is enhanced. This is because the current spreading effect of the far side of the ITO (transparent conductive layer) is poor, and if the ITO is added, the shielding effect of the added ITO area to light is greater than the light emitting effect caused by the lateral diffusion, which may reduce the EQE of the light emitting diode and is not favorable for light emitting.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by the practice of the invention.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
Fig. 1 is a schematic top view of a light emitting diode according to a first embodiment of the present invention;
FIG. 2A is a schematic size diagram of FIG. 1;
FIG. 2B is an enlarged partial schematic view of FIG. 2A;
fig. 3 is a schematic cross-sectional view of a light emitting diode according to a first embodiment of the invention;
fig. 4 is a schematic top view of a light emitting diode according to a second embodiment of the present invention;
fig. 5 is a schematic top view of a light emitting diode according to a third embodiment of the present invention;
fig. 6 is a schematic top view of a light emitting diode according to a fourth embodiment of the present invention;
fig. 7 is a schematic top view of a light emitting diode according to a fifth embodiment of the present invention;
fig. 8 is a schematic cross-sectional view of a light emitting diode according to a sixth embodiment of the invention;
fig. 9 is a schematic top view of a light emitting diode according to a sixth embodiment of the invention.
Reference numerals:
10-a substrate; 12-a stack of semiconductor layers; 121-upper surface; 122-lower surface; 123-a first semiconductor layer; 124-a light emitting layer; 125-a second semiconductor layer; 14-a transparent conductive layer; 16-a current blocking layer; 18-an insulating layer; 21-a first electrode; 211-a first start; 212-a first extension; 22-a second electrode; 221-a second start; 222-a second extension; 32-proximal edge; 34-the distal edge; 41-a first side; 42-a second side edge; 43-third side; 431-lower long side; 432-short side; 44-a fourth side; 441-arc-shaped edges; 442-long side; 81-a first pad; 82-a second pad; l1-a first distance; l2-a second distance; l3-a third distance; l4-fourth distance; w1-first vertical distance; w2-second vertical distance.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments; the technical features designed in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other; all other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of protection of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "lateral", "up", "down", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations and positional relationships based on those shown in the drawings, are only for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the device or component in question must have a particular orientation or be constructed and operated in a particular orientation, and therefore, should not be taken as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified. In addition, the term "comprises" and any variations thereof mean "including at least".
Referring to fig. 1, fig. 2A, fig. 2B and fig. 3, fig. 1 is a schematic top view structure diagram of a light emitting diode according to a first embodiment of the present invention, fig. 2A is a schematic size diagram of fig. 1, fig. 2B is a schematic partial enlarged diagram of fig. 2A, and fig. 3 is a schematic cross-sectional structure diagram of the light emitting diode according to the first embodiment of the present invention. Fig. 3 is a schematic longitudinal sectional view taken along a section line F-F of fig. 1. A first embodiment of the present invention provides a light emitting diode. As shown in the figure, the light emitting diode may include a semiconductor stack 12, a transparent conductive layer 14, a first electrode 21, and a second electrode 22. In the figure, the transparent conductive layer 14 is shown in a filling pattern in order to clarify the shape of the transparent conductive layer 14.
A stack of semiconductor layers 12 is disposed on substrate 10. The substrate 10 may be an insulating substrate, and preferably, the substrate 10 may be made of a transparent material or a translucent material. In the illustrated embodiment, the substrate 10 is a sapphire substrate. In some embodiments, the substrate 10 may be a patterned sapphire substrate, but the present disclosure is not limited thereto. The substrate 10 may also be made of a conductive material or a semiconductor material. For example: the substrate 10 material may include at least one of silicon carbide, silicon, magnesium aluminum oxide, magnesium oxide, lithium aluminum oxide, aluminum gallium oxide, and gallium nitride.
The stacked semiconductor layer 12 has a lower surface 122 and an upper surface 121 opposite to each other, and the stacked semiconductor layer 12 includes a first semiconductor layer 123, a light emitting layer 124, and a second semiconductor layer 125 in this order from the lower surface 122 to the upper surface 121. I.e., the light emitting layer 124 is located between the first semiconductor layer 123 and the second semiconductor layer 125. Part of the upper surface of the first semiconductor layer 123 is not covered by the light emitting layer 124, and a mesa (mesa) is formed where an electrode is mainly disposed.
The first semiconductor layer 123 may be an N-type semiconductor layer, and may supply electrons to the light emitting layer 124 under power supply. In some embodiments, the first semiconductor layer 123 includes an N-type doped nitride layer. The N-type doped nitride layer may include one or more N-type impurities of a group IV element. The N-type impurity may include one or a combination of Si, ge, sn. In some embodiments, a buffer layer may also be disposed between the N-type semiconductor layer and the substrate 10 to mitigate lattice mismatch between the substrate 10 and the N-type semiconductor layer. The buffer layer may comprise an un-doped AlN layer (u-AlN for short) or an un-doped AlGaN layer (u-AlGaN for short). The N-type semiconductor layer may be connected to the substrate 10 through an adhesive layer.
The light-emitting layer 124 may be a Quantum Well (QW) structure. In some embodiments, the light emitting layer 124 may also be a Multiple Quantum Well structure (MQW), wherein the Multiple Quantum Well structure includes a plurality of Quantum Well layers (Well) and a plurality of Quantum Barrier layers (Barrier) alternately arranged in a repeating manner, and may be a Multiple Quantum Well structure such as GaN/AlGaN, inAlGaN/InAlGaN, or InGaN/AlGaN. The composition and thickness of the well layer in the light-emitting layer 124 determine the wavelength of the generated light. To improve the light emitting efficiency of the light emitting layer 124, this may be accomplished by varying the depth of the quantum wells, the number of layers, the thickness, and/or other characteristics of pairs of quantum wells and quantum barriers in the light emitting layer 124.
The second semiconductor layer 125 may be a P-type semiconductor layer, and may provide holes to the light emitting layer 124 under the power supply. In some embodiments, the second semiconductor layer 125 includes a P-type doped nitride layer. The P-type doped nitride layer may include one or more P-type impurities of a group II element. The P-type impurities may include one or a combination of Mg, zn, be. The second semiconductor layer 125 may have a single-layer structure or a multi-layer structure having different compositions. In addition, the arrangement of the stacked semiconductor layers 12 is not limited to this, and other kinds of stacked semiconductor layers 12 may be selected according to actual requirements.
The transparent conductive layer 14 is located on the second semiconductor layer 125, and is used to guide current to be injected into the second semiconductor layer 125 more uniformly from the upper electrode, thereby achieving the effect of current spreading. As an example, the transparent conductive material may include Indium Tin Oxide (ITO), zinc indium oxide (IZO), indium oxide (InO), tin oxide (SnO), cadmium Tin Oxide (CTO), antimony Tin Oxide (ATO), aluminum Zinc Oxide (AZO), zinc Tin Oxide (ZTO), gallium doped zinc oxide (GZO), indium doped tungsten oxide (IWO), or zinc oxide (ZnO), but the disclosed embodiment is not limited thereto.
The first electrode 21 is located on the first semiconductor layer 123. The first electrode 21 may be made of a metal material, which may be a single-layer metal structure, a double-layer metal structure, or a multi-layer metal structure, such as: ti/Al, ti/Al/Ti/Au, ti/Al/Ni/Au, V/Al/Pt/Au, etc. In some embodiments, the first electrode 21 may be directly formed on the mesa of the first semiconductor layer 123, forming a good ohmic contact with the first semiconductor layer 123. In some embodiments, the first electrode 21 may include a first initiation 211 and a first extension 212. The first start portion 211 is connected to the first extension portion 212, and the first extension portion 212 extends from the first start portion 211 toward the second electrode 22, so that the current is uniformly diffused. Preferably, the first extension 212 has a strip structure.
The second electrode 22 is located over the transparent conductive layer 14. The second electrode 22 may be made of a metal material, the second electrode 22 may be made of the same or similar material as the first electrode 21, and the second electrode 22 may be made of a different material from the first electrode 21. In some embodiments, the second electrode 22 may include a second initiation 221 and a second extension 222. The second start portion 221 is connected to the second extension portion 222, and the second extension portion 222 extends from the second start portion 221 toward the first start portion 211, so that the current is uniformly diffused.
As shown in fig. 1, 2A and 2B, when viewed from above the light emitting diode toward the stacked semiconductor layer 12 in plan view, the transparent conductive layer 14 has a proximal edge 32 and a distal edge 34, a distance from the proximal edge 32 to the first electrode 21 is smaller than a distance from the distal edge 34 to the first electrode 21, and a shortest distance from the proximal edge 32 to an edge of the second semiconductor layer 125 is smaller than a shortest distance from the distal edge 34 to an edge of the second semiconductor layer 125. The shortest distance of the transparent conductive layer 14 to the first electrode 21 is the distance of the proximal edge 32 to the first electrode 21. In other words, the near edge 32 refers to the edge where the distance from the transparent conductive layer 14 to the first electrode 21 is shortest (refer to a line segment from a point a to a point B in fig. 2A as the near edge 32), and the remaining edges are further away from the first electrode 21 than the near edge 32, and are therefore defined as the far edge 34. That is, the distal edge 34 refers to the other edges of all the edges of the transparent conductive layer 14 except the proximal edge 32, i.e., the transparent conductive layer 14 has only the proximal edge 32 and the distal edge 34.
As is apparent from fig. 2B, the shortest distance from the proximal edge 32 to the edge of the second semiconductor layer 125 is smaller than the shortest distance from the distal edge 34 to the edge of the second semiconductor layer 125, i.e., the distance from the distal edge 34 to the second semiconductor layer 125 is larger when the distal edge 34 is viewed relative to the proximal edge 32. The shortest distance from any point on the proximal edge 32 to the first electrode 21 is equal, and the term equality is understood in a broad sense (not exactly one and no difference), and for example, an error of 0.1 μm or less may be allowed, and it is also the case that the shortest distance from a first point on the proximal edge 32 to the first electrode 21 is 10 μm and the shortest distance from a second point on the proximal edge 32 to the first electrode 21 is 10.1 μm.
The area of the transparent conductive layer 14 is optimized by enlarging the distance from the far edge 34 of the transparent conductive layer 14 far away from the first electrode 21 to the edge of the second semiconductor layer 125, the existing design direction for maximizing the ITO area is replaced, the EQE (external quantum efficiency) and the WPE (electro-optic conversion efficiency) of the light emitting diode can be improved, and the light emitting performance is enhanced. This is because the current spreading effect of the far side 34 of the transparent conductive layer 14 is poor, and if the transparent conductive layer is added, the shielding effect of the added transparent conductive layer area to light is greater than the light emitting effect caused by the lateral diffusion, which may reduce the EQE of the light emitting diode, and is not favorable for improving the light emitting efficiency. In addition, the shortest distance from the near edge 32 to the edge of the second semiconductor layer 125 may be smaller than at least 80% of the shortest distance from the far edge 34 to the edge of the second semiconductor layer 125, and the EQE and WPE of the light emitting diode may also be effectively improved, so as to enhance the light extraction performance. This is because although the current spreading effect of the distal edge 34 of the transparent conductive layer 14 is poor, the distance from the distal edge 34 to the edge of the second semiconductor layer 125 is enlarged, and at the same time, part of the area of the transparent conductive layer 14 is lost, and the lost part of the distal edge 34 is somewhat close to the second electrode 22, and the current spreading effect of the transparent conductive layer 14 of the part of the second electrode 22 is relatively better remained, so that some of the edge of the distal edge 34 of the transparent conductive layer 14 close to the second electrode 22 is remained (i.e. it is not necessary that 100% of the shortest distance from the distal edge 34 to the edge of the second semiconductor layer 125 is greater than the shortest distance from the proximal edge 32 to the edge of the second semiconductor layer 125), which is better for increasing the external quantum efficiency of the light emitting diode.
In some embodiments, considering that the transparent conductive layer 14 should have both voltage characteristics and light absorption from the light emitting layer 124, the shortest distance from the near side 32 to the edge of the second semiconductor layer 125 may be in a range of 2 to 10 micrometers, and the shortest distance from the far side 34 to the edge of the second semiconductor layer 125 may be in a range of 3 to 30 micrometers. Preferably, the shortest distance from the near edge 32 to the edge of the second semiconductor layer 125 may range from 2 to 5 micrometers, and the shortest distance from the far edge 34 to the edge of the second semiconductor layer 125 may range from 6 to 20 micrometers, because although the current spreading effect of the far edge 34 of the transparent conductive layer 14 is poor, the area of the transparent conductive layer 14 is still lost while the distance from the far edge 34 of the transparent conductive layer 14 to the edge of the second semiconductor layer 125 is increased, and therefore, when the two ranges are respectively 2 to 5 micrometers and 6 to 20 micrometers, the external quantum efficiency of the light emitting diode is better improved.
In the present embodiment, as shown in fig. 1 and fig. 2A, the transparent conductive layer 14 has four sides, which are sequentially defined as a first side 41, a second side 42, a third side 43 and a fourth side 44 in a surrounding direction (in a counterclockwise direction) when viewed from above the light emitting diode toward the stacked semiconductor layer 12. The shortest distance from the first side 41 to the edge of the second semiconductor layer 125 is a first distance L1, the shortest distance from the second side 42 to the edge of the second semiconductor layer 125 is a second distance L2, the shortest distance from the third side 43 to the edge of the second semiconductor layer 125 is a third distance L3, and the shortest distance from the fourth side 44 to the edge of the second semiconductor layer 125 is a fourth distance L4. The first, second and third distances L1, L2 and L3 are each greater than the fourth distance L4, and the fourth side 44 is closer to the first electrode 21 than the first, second and third sides 41, 42 and 43. That is, the fourth side 44 is the proximal edge 32 of the transparent conductive layer 14, and the first side 41, the second side 42, and the third side 43 are the distal edge 34 of the transparent conductive layer 14.
In some embodiments, the first distance L1, the second distance L2, and the third distance L3 are the same, but the present disclosure is not limited thereto, and the first distance L1, the second distance L2, and the third distance L3 may also be different, so long as the fourth distance L4 is smaller than the first distance L1, the second distance L2, and the third distance L3, the purpose of increasing the EQE and the WPE of the led may be achieved, and the light emitting performance of the led may be enhanced. In some embodiments, the fourth distance L4 may be less than the first distance L1 by 1 to 28 micrometers, such as less than 1, 2, 3, 5 micrometers, and so on.
In some embodiments, as shown in fig. 1 and 2A, the fourth side 44 includes an arc-shaped side 441 and a long side 442, and the third side 43 includes a lower long side 431 and a short side 432, when viewed from above the light emitting diode toward the stacked semiconductor layer 12. The two ends of the arc-shaped edge 441 are respectively connected to the first side edge 41 and the long edge 442, the two ends of the long edge 442 are respectively connected to the arc-shaped edge 441 and the short edge 432, the two ends of the short edge 432 are respectively connected to the long edge 442 and the lower long edge 431, and the two ends of the lower long edge 431 are respectively connected to the short edge 432 and the second side edge 42. That is, the lower long side 431, the short side 432, the long side 442, and the arc side 441 are arranged in this order along the circling direction. The short side 432 protrudes from the long side 442, the short side 432 is parallel to the long side 442, and the length directions of the two are the same. Therefore, the light emitting performance of the light emitting diode can be further improved. The short side 432 protrudes from the long side 442, and specifically, when viewed from above the light emitting diode toward the semiconductor stacked layer 12, a first vertical distance W1 from the long side 442 to the second side 42 is smaller than a second vertical distance W2 from the short side 432 to the second side 42. Preferably, the first vertical distance W1 is shorter than the second vertical distance W2 by 1 to 25 micrometers, such as shorter by 1, 2, 3 micrometers, and so on. Since the short edge 432 is far away from the first electrode 21, the current spreading effect is poor, the shielding effect of the increased ITO area on light is greater than the light emitting effect generated by lateral diffusion, and the EQE of the light emitting diode is reduced. And, the shortest distance of the long side 442 to the edge of the second semiconductor layer 125 is smaller than the shortest distance of the short side 432 to the edge of the second semiconductor layer 125. In some embodiments, when looking down from the top of the light emitting diode toward the stacked semiconductor layer 12, the coverage area of the transparent conductive layer 14 is gradually reduced from the second electrode 22 to the first electrode 21 along the extending direction of the second extending portion 222, so as to further improve the light emitting performance of the light emitting diode.
In some embodiments, as shown in fig. 1-3, the light emitting diode may further include a current blocking layer 16 and an insulating layer 18.
The current blocking layer 16 is located between the transparent conductive layer 14 and the second semiconductor layer 125, and is used for blocking current from vertically flowing into the second semiconductor layer 125 from the upper electrode, so as to further improve the photoelectric performance of the light emitting diode.
The insulating layer 18 covers the sidewalls and a portion of the upper surface 121 of the stack of semiconductor layers 12 as well as the transparent conductive layer 14, the first electrode 21 and the second electrode 22. The insulating layer 18 has an opening, and the first electrode 21 and the second electrode 22 are located in the opening of the insulating layer 18 to facilitate subsequent wire bonding. The insulating layer 18 has different functions according to the related positions, such as covering the epitaxial layer sidewall for preventing the conductive material from leaking to electrically connect the first semiconductor layer 123 and the second semiconductor layer 125, and reducing the short-circuit abnormality of the light emitting diode chip, but the embodiment of the disclosure is not limited thereto.
In some embodiments, the material of the insulating layer 18 comprises a non-conductive material. The non-conductive material is preferablyInorganic materials or dielectric materials. The inorganic material includes silica gel (Silicone) or Glass (Glass). The dielectric material comprises aluminum oxide (AlO), silicon nitride (SiN) x ) Silicon oxide (SiO) x ) Titanium oxide (TiO) x ) Or magnesium fluoride (MgF) x ) May be an electrically insulating material. For example, the insulating layer 18 may be silicon dioxide, silicon nitride, titanium oxide, tantalum oxide, niobium oxide, barium titanate, or a combination thereof, which may be, for example, a bragg reflector (DBR) formed by repeated stacking of two materials.
Referring to fig. 4, fig. 4 is a schematic top view of a light emitting diode according to a second embodiment of the present invention. Compared with the led of the first embodiment in fig. 1, the led of the second embodiment mainly differs in that: the first electrodes 21 are disposed at different positions, the first electrodes 21 are disposed near the center line of the semiconductor stack 12, and the shape of the transparent conductive layer 14 is changed accordingly, but the transparent conductive layer 14 still has a near edge 32 and a far edge 34, the shortest distance from the near edge 32 to the first electrodes 21 is smaller than the shortest distance from the far edge 34 to the first electrodes 21, referring to a line segment from a point a to a point B clockwise in fig. 4 as the near edge 32, and the shortest distance from the near edge 32 to the edge of the second semiconductor layer 125 is smaller than the shortest distance from the far edge 34 to the edge of the second semiconductor layer 125, thereby improving the light emitting performance of the light emitting diode.
Referring to fig. 5, fig. 5 is a schematic top view of a light emitting diode according to a third embodiment of the present invention. Compared with the led of the first embodiment in fig. 1, the led of the third embodiment mainly differs in that: the first electrode 21 is disposed at a different position, the first electrode 21 is completely surrounded by the second semiconductor layer 125 (the first electrode 21 in the first embodiment and the second embodiment is not completely surrounded by the second semiconductor layer 125), the first start portion 211 of the first electrode 21 is disposed at the center line of the semiconductor stack 12, the second start portions 221 at the left and right sides extend toward the second start portion 221 of the second electrode 22, and the shape of the transparent conductive layer 14 changes accordingly, but the transparent conductive layer 14 still has the proximal edge 32 and the distal edge 34. The proximal edge 32 of the present embodiment is closed loop, unlike the line segment of fig. 1. The shortest distance from the near edge 32 to the first electrode 21 is smaller than the shortest distance from the far edge 34 to the first electrode 21, since the first electrode 21 is completely surrounded by the second semiconductor layer 125, the near edge 32 refers to the inner side of the transparent conductive layer 14, the far edge 34 refers to the outer side of the transparent conductive layer 14 (near the outer periphery of the light emitting diode), and the shortest distance from the near edge 32 to the edge of the second semiconductor layer 125 is smaller than the shortest distance from the far edge 34 to the edge of the second semiconductor layer 125, thereby improving the light emitting performance of the light emitting diode.
Referring to fig. 6, fig. 6 is a schematic top view of a light emitting diode according to a fourth embodiment of the invention. Compared with the light emitting diode of the first embodiment in fig. 1, the light emitting diode of the fourth embodiment is mainly different in that: the first electrode 21 is disposed at a different position, the first electrode 21 is completely surrounded by the second semiconductor layer 125, the first starting portion 211 of the first electrode 21 is disposed near the center line of the semiconductor stack 12, and the second starting portions 221 at two sides extend toward the second starting portion 221 of the second electrode 22, so that the shape of the transparent conductive layer 14 changes, but the transparent conductive layer 14 still has a proximal edge 32 and a distal edge 34. The proximal edge 32 of the present embodiment is closed loop, unlike the line segment of fig. 1. Since the first electrode 21 is completely surrounded by the second semiconductor layer 125, the near edge 32 refers to the inner side of the transparent conductive layer 14, the far edge 34 refers to the outer side (near the outer periphery of the led) of the transparent conductive layer 14, the shortest distance from the near edge 32 to the first electrode 21 is smaller than the shortest distance from the far edge 34 to the first electrode 21, and the shortest distance from the near edge 32 to the edge of the second semiconductor layer 125 is smaller than the shortest distance from the far edge 34 to the edge of the second semiconductor layer 125, thereby improving the light emitting performance of the led.
Referring to fig. 7, fig. 7 is a schematic top view of a light emitting diode according to a fifth embodiment of the present invention. Compared with the light emitting diode of the first embodiment in fig. 1, the light emitting diode of the fifth embodiment is mainly different in that: the extended shape of the second electrode 22 is different and the first electrode 21 has no extended electrode. However, the transparent conductive layer 14 still has a near edge 32 and a far edge 34, the shortest distance from the near edge 32 to the first electrode 21 is smaller than the shortest distance from the far edge 34 to the first electrode 21, and referring to a line segment from a point a to a point B in fig. 7, the shortest distance from the near edge 32 to the edge of the second semiconductor layer 125 is smaller than the shortest distance from the far edge 34 to the edge of the second semiconductor layer 125, thereby improving the light emitting performance of the light emitting diode.
Referring to fig. 8 and 9, fig. 8 is a schematic cross-sectional structure diagram of a light emitting diode according to a sixth embodiment of the present invention, and fig. 9 is a schematic top view structure diagram of the light emitting diode according to the sixth embodiment of the present invention. Fig. 8 is a schematic longitudinal sectional view taken along a section line F-F of fig. 9. Compared with the light emitting diode of the first embodiment in fig. 1, the light emitting diode of the sixth embodiment is mainly different in that: the light emitting diode of the present embodiment is a flip-chip diode, and further includes a first pad 81 and a second pad 82, and the first pad 81 and the second pad 82 are connected to the first electrode 21 and the second electrode 22, respectively, through an opening of the insulating layer 18. The light emitting diode of the first embodiment is a diode with a forward-mounted structure. In addition, since the first electrode 21 in the light emitting diode of the present embodiment is segmented, the proximal edge 32 thereof may also be segmented along with the first electrode 21.
The invention also provides a light-emitting device which adopts the light-emitting diode provided by any one of the embodiments. The size of the light emitting diode may be Micro LED, mini LED or conventional LED. The light emitting diode can be applied to a backlight display or an RGB display screen, and the small-sized flip light emitting diode can be integrally mounted on an application substrate or a package substrate in a number of hundreds, thousands or tens of thousands to form a light emitting source portion of a backlight display device or an RGB display device.
It should be noted that, due to the influence of factors such as the difference of the photoresist, the line expressed by the present invention is not necessarily a completely straight line, and includes the situation that the straight line edge may slightly bulge or bend during the manufacturing process; the arc shape of the present invention is not necessarily a circular arc shape, and includes the situation that the arc edge may slightly bulge or bend during the manufacturing process. This is achieved byIn addition, the current density of the light emitting diode is less than or equal to 0.5A/mm 2 The light emitting diode in the above embodiments has better effect when applied in the low current density scene.
In summary, in the light emitting diode and the light emitting device provided in an embodiment of the invention, the area of the transparent conductive layer 14 is optimized by increasing the distance from the far edge 34 of the transparent conductive layer 14 away from the first electrode 21 to the edge of the second semiconductor layer 125, so as to replace the existing design direction for maximizing the ITO area, thereby improving the EQE (external quantum efficiency) and the WPE (electro-optic conversion efficiency) of the light emitting diode, and enhancing the light emitting performance. This is because the current spreading effect of the distal edge 34 of the transparent conductive layer 14 is poor, and if the transparent conductive layer is added, the shielding effect of the added area of the transparent conductive layer on light is greater than the light emitting effect caused by lateral diffusion, which may reduce the EQE of the light emitting diode and is not favorable for light emitting.
In addition, it will be appreciated by those skilled in the art that, notwithstanding the many problems inherent in the prior art, each embodiment or solution of the present invention may be improved in one or more respects, without necessarily simultaneously solving all the technical problems inherent in the prior art or in the background art. It will be understood by those skilled in the art that nothing in a claim should be taken as a limitation on that claim.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (17)
1. A light emitting diode, characterized by: the light emitting diode includes:
the semiconductor lamination layer is provided with a lower surface and an upper surface which are opposite, and the semiconductor lamination layer sequentially comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer from the lower surface to the upper surface;
a transparent conductive layer over the second semiconductor layer;
a first electrode located on the first semiconductor layer;
a second electrode located on the transparent conductive layer;
the transparent conductive layer has a near side and a far side, the distance from the near side to the first electrode is smaller than the distance from the far side to the first electrode, the distance from the near side to the edge of the second semiconductor layer is smaller than the distance from the far side to the edge of the second semiconductor layer, the shortest distance from the transparent conductive layer to the first electrode is the distance from the near side to the first electrode, and the far side is the other side except the near side among all sides of the transparent conductive layer.
2. The led of claim 1, wherein: the shortest distance from the near edge to the edge of the second semiconductor layer is smaller than the shortest distance from the far edge to the edge of the second semiconductor layer.
3. The led of claim 1, wherein: the shortest distance from the near side to the edge of the second semiconductor layer ranges from 2 to 10 micrometers.
4. The led of claim 1, wherein: the shortest distance from the far edge to the edge of the second semiconductor layer ranges from 3 to 30 micrometers.
5. The led of claim 1, wherein: the shortest distance of the near edge to the edge of the second semiconductor layer is less than at least 80% of the shortest distance of the far edge to the edge of the second semiconductor layer.
6. The led of claim 1, wherein: follow emitting diode's top orientation the semiconductor stack overlooks, transparent conducting layer has four sides, four sides are defined as first side, second side, third side and fourth side in proper order on a direction of encircleing, first side arrives the shortest distance of the edge of second semiconductor layer is the first distance, the second side arrives the shortest distance of the edge of second semiconductor layer is the second distance, the third side arrives the shortest distance of the edge of second semiconductor layer is the third distance, the fourth side arrives the shortest distance of the edge of second semiconductor layer is the fourth distance, wherein, the first distance the second distance with the third distance all is greater than the fourth distance, the fourth side compare in the first side the second side with the third side is closer to first side electrode, the fourth side is the transparent conducting layer the near side, the second side the third side be the transparent conducting layer the far side.
7. The light-emitting diode of claim 6, wherein: the fourth distance is smaller than the first distance by 1 to 28 micrometers.
8. The light-emitting diode of claim 6, wherein: the first distance, the second distance, and the third distance are all the same.
9. The light-emitting diode of claim 6, wherein: follow emitting diode's top orientation the semiconductor stromatolite is overlooked, the fourth side includes an arc limit and a long limit, third side limit includes a minor face and a long limit, the both ends on arc limit are connected respectively first side with long limit, the both ends on long limit are connected respectively the arc limit with the minor face, the both ends on short limit are connected respectively the long limit with long limit down, the both ends on long limit are connected respectively the minor face with the second side, the minor face protrusion in long limit.
10. The led of claim 8, wherein: and looking down from the upper part of the light-emitting diode to the semiconductor lamination layer, wherein a first vertical distance from the long side to the second side edge is smaller than a second vertical distance from the short side to the second side edge.
11. The led of claim 9, wherein: the shortest distance from the long side to the edge of the second semiconductor layer is smaller than the shortest distance from the short side to the edge of the second semiconductor layer.
12. The led of claim 9, wherein: the first vertical distance is shorter than the second vertical distance by 1 to 25 micrometers.
13. The led of claim 1, wherein: the first electrode comprises a first initial part and a first extension part, the first initial part is connected with the first extension part, the second electrode comprises a second initial part and a second extension part, the second initial part is connected with the second extension part, the first extension part extends from the first initial part towards the second electrode, and the second extension part extends from the second initial part towards the first initial part.
14. The led of claim 13, wherein: when viewed from above the light emitting diode toward the semiconductor stack, a coverage area of the transparent conductive layer is gradually reduced from the second electrode to the first electrode along an extending direction of the second extending portion.
15. The led of claim 13, wherein: the first extending part is of a strip-shaped structure.
16. The led of claim 1, wherein: the current density of the LED is less than or equal to 0.5A/mm 2 。
17. A light emitting device, characterized in that: the light-emitting device adopts the light-emitting diode as claimed in any one of claims 1 to 16.
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| CN202211208152.1A CN115274964A (en) | 2022-09-30 | 2022-09-30 | Light emitting diode and light emitting device |
| US18/475,649 US20240113258A1 (en) | 2022-09-30 | 2023-09-27 | Light-emitting diode and light-emitting device having the same |
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