CN217445326U - High-frequency AT crystal cutting oscillator and system - Google Patents
High-frequency AT crystal cutting oscillator and system Download PDFInfo
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- CN217445326U CN217445326U CN202221389078.3U CN202221389078U CN217445326U CN 217445326 U CN217445326 U CN 217445326U CN 202221389078 U CN202221389078 U CN 202221389078U CN 217445326 U CN217445326 U CN 217445326U
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- 239000013078 crystal Substances 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 230000005284 excitation Effects 0.000 claims abstract description 15
- 230000007704 transition Effects 0.000 claims description 13
- 230000000694 effects Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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Abstract
The utility model discloses a high-frequency AT crystal cutting oscillator and a system, which comprises a substrate, wherein one end of the substrate is provided with a connecting part, the other end of the substrate is provided with a vibrating part, the vibrating part is connected with the connecting part, and the thickness of the vibrating part is smaller than that of the connecting part; the electrode assembly comprises excitation electrodes and extension electrodes, wherein the excitation electrodes are respectively arranged at two ends of the vibration part and are connected with the extension electrodes; the extension electrodes are respectively arranged on two sides of the connecting part. The utility model discloses can enough reduce the interference of other positions of base plate to vibration portion, can improve again the vibration frequency of vibration portion.
Description
Technical Field
The utility model relates to a crystal trembler technical field, concretely relates to crystal oscillator and system are cut to high frequency AT.
Background
The quartz crystal is used as a time or frequency reference source in a circuit, which can be called as an equipment heart and determines the performance stability of electronic equipment, and the cut angle of a quartz plate is closely related to a quartz resonator, wherein the cut angle of an AT cut is 35 degrees and 15 degrees, and is the most commonly used cut type in the crystal resonator;
the AT cut crystal resonator is an element which takes an artificial quartz crystal as a material and utilizes voltage characteristics (thickness shear vibration), and is often applied to a circuit system which stably works through reference frequency, such as a CPU, a sound card, a display card, a network card and the like; electronic products requiring a clock signal, such as mobile phones, smart bracelets, electronic watches, computers, air conditioners, washing machines, refrigerators, automobiles, traffic lights, and the like.
AT present, a vibration part of a conventional AT-cut crystal resonator is generally arranged in the middle area of a substrate, and vibration energy generated by the vibration part is influenced by useless vibration generated by other parts of the substrate, so that the vibration frequency is low, and the vibration effect is poor.
Therefore, there is a need for an AT-cut crystal oscillator capable of increasing the oscillation frequency and increasing the oscillation effect.
SUMMERY OF THE UTILITY MODEL
Therefore, the utility model aims to solve the technical problem that the vibration frequency is low among the prior art is overcome, and the vibration effect is poor defect.
In order to solve the technical problem, the utility model provides a crystal oscillator is cut to high frequency AT, include:
the vibration device comprises a substrate, a vibration part and a vibration part, wherein one end of the substrate is provided with a connecting part, the other end of the substrate is provided with the vibration part, the vibration part is connected with the connecting part, and the thickness of the vibration part is smaller than that of the connecting part;
the electrode assembly comprises excitation electrodes and extension electrodes, wherein the excitation electrodes are respectively arranged at two ends of the vibration part and are connected with the extension electrodes; the extension electrodes are respectively arranged on two sides of the connecting part.
As an optimized mode of the present invention, the excitation electrode includes a first electrode and a second electrode, the first electrode and the second electrode are respectively disposed on two sides of the vibration portion, and are attached to the vibration portion.
As a preferable mode of the present invention, the radial center line of the first electrode is parallel to the radial center line of the second electrode.
As a preferable mode of the present invention, the thickness dimension of the vibration region is smaller than the thickness dimensions of the other regions of the vibration portion.
As an optimized mode of the present invention, the thickness dimension range of the vibration region is: 2 to 20 μm. As a preferred mode of the present invention, the extension electrode includes a third electrode and a fourth electrode, the third electrode and the fourth electrode are respectively disposed on two sides of the connecting portion, and are attached to the connecting portion, and the third electrode is connected to the first electrode, and the fourth electrode is connected to the second electrode.
As an optimized mode of the present invention, the substrate is an AT cutting substrate.
As a preferred mode of the present invention, the vibration portion is provided with a transition portion at a junction of the connecting portion, and both ends of the transition portion are respectively connected to the vibration portion and the connecting portion.
As an optimized mode of the present invention, the transition portion is provided with a first inclined plane and a second inclined plane, the first inclined plane and the second inclined plane are respectively disposed on two sides of the substrate.
The utility model discloses still provide high frequency AT and cut crystal oscillator system, include high frequency AT cut crystal oscillator.
Compared with the prior art, the technical scheme of the utility model have following advantage:
high frequency AT cut crystal oscillator and system, pass through the etching technology attenuate back with vibration portion, can enough reduce the interference of other positions of base plate to vibration portion, can improve again the vibration frequency of vibration portion, and improve the vibration effect of vibration portion.
Drawings
In order to make the content of the present invention more clearly understood, the present invention will be described in further detail with reference to the following embodiments of the present invention, in conjunction with the accompanying drawings.
Fig. 1 is a schematic diagram of a high-frequency AT cut crystal oscillator according to the present invention.
Fig. 2 is a first schematic diagram of the high-frequency AT cut crystal oscillator of the present invention.
Fig. 3 is a schematic diagram of a second surface of the high-frequency AT-cut crystal oscillator of the present invention.
Fig. 4 is a schematic diagram of a first side view of the high-frequency AT cut crystal oscillator of the present invention.
Fig. 5 is a second side view schematic diagram of the high-frequency AT cut crystal oscillator of the present invention.
The specification reference numbers indicate: 10. connection portion, 11, vibration portion, 12, transition portion, 20, excitation electrode, 21, extension electrode, 110, vibration region, 120, first inclined plane, 121, second inclined plane, 200, first electrode, 201, second electrode, 210, third electrode, 211, fourth electrode.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and specific embodiments so that those skilled in the art can better understand the present invention and can implement the present invention, but the embodiments are not limited to the present invention.
In the description of the present invention, it is to be understood that the terms "center", "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "second" or "first" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; the connection can be mechanical connection, electrical connection or communication; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
Unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features, or indirectly contacting the first and second features through intervening media. Furthermore, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements does not include a limitation to the listed steps or elements but may alternatively include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Referring to fig. 1-5, an embodiment of the high frequency AT crystal oscillator of the present invention comprises:
the vibration device comprises a substrate, wherein one end of the substrate is provided with a connecting part 10, the other end of the substrate is provided with a vibration part 11, the vibration part 11 is connected with the connecting part 10, and the thickness of the vibration part 11 is smaller than that of the connecting part 10;
an electrode assembly including an excitation electrode 20 and an extension electrode 21, wherein the excitation electrode 20 is respectively disposed at two ends of the vibration part 11 and connected to the extension electrode 21; the extension electrodes 21 are respectively provided on both sides of the connection portion 10.
The substrate is an AT cutting substrate, and the substrate includes but is not limited to a crystal substrate, and the crystal substrate refers to a substrate processed by a transparent quartz plate; the shapes and the sizes of the connecting part 10 and the vibrating part 11 are set by operators according to actual production requirements and cost; referring to fig. 1, one end of the vibration part 11 is a closed space, and the other end is an open space; the vibration part 11 adopts etching technologies including but not limited to existing photolithography, wet etching, ICP (inductively coupled plasma etching), RIE (reactive ion etching), and the like, and is specifically set by an operator according to production requirements and cost, wherein, referring to fig. 1 and 4, the vibration part 11 adopts asymmetric etching, and the etching structure of the two sides of the vibration part 11 is mirror inversion, so that the thickness of the vibration region 110 of the vibration part 11 is reduced for the second time after the two times of etching, and the vibration region 110 is the thinnest part of the vibration part 11; the thickness dimension range of the processed vibration region 110 is: 2-20 μm, wherein the vibration region 110 is a region of the vibration part 11 provided with an excitation electrode; the lower the thickness dimension of the vibrating portion 11, the higher the vibration frequency, and the equivalent formula thereof is: 1670/t (wherein the unit of the vibration frequency f is: [ MHz ], and the unit of the quartz thickness t is: [ μm ]).
By adopting the technical scheme, the thickness of the vibration part 11 is controlled to be 0.8-5 μm through photoetching, then the excitation electrodes 20 are arranged on two surfaces of the vibration part 11, the excitation electrodes 20 are connected with the extension electrodes 21, the vibration frequency of the vibration part 11 is improved by utilizing the inverse piezoelectric effect of a quartz plate, the vibration effect of the vibration part 11 is improved, and the influence of the connecting part 10 on the vibration part 11 is reduced.
Referring to fig. 2-3, the excitation electrode 20 includes a first electrode 200, a second electrode 201;
wherein the first electrode 200 is disposed on one surface of the vibrating portion 11, the second electrode 201 is disposed on the other surface of the vibrating portion 11, and the first electrode 200 and the second electrode 201 are attached to the vibrating region 110 of the vibrating portion 11; and the radial center line of the first electrode 200 is parallel to the radial center line of the second electrode 201.
Referring to fig. 2-3, the extension electrode 21 includes a third electrode 210 and a fourth electrode 211;
a third electrode 210 is disposed on one surface of the connecting portion 10, and the third electrode 210 is connected to one side of the first electrode 200; a fourth electrode 211 is arranged on the other surface of the connecting part 10, and the fourth electrode 211 is connected with one side of the second electrode 201; the third electrode 210 and the fourth electrode 211 are attached to the surface of the connecting part 10;
by adopting the above technical solution, the operation efficiency generated when the vibration region 110 of the vibration part 11 operates is improved by providing the electrodes on both sides of the vibration part 11.
Referring to fig. 1-3, a transition part 12 is arranged at the connection part of the vibration part 11 and the connection part 10;
one end of the transition part 12 is connected with the vibration part 11, the other end of the transition part 12 is connected with the connecting part 10, the transition part 12 adopts shapes including but not limited to inclination, arc, segment difference and the like, and the specific shape is set by an operator according to actual production requirements and cost; in the present embodiment, the reference is made to an inclined shape, that is, the transition portion 12 is provided with a first inclined surface 120 and a second inclined surface 121, the first inclined surface 120 is disposed on a surface of the substrate close to the first electrode 200, and the second inclined surface 121 is disposed on a surface of the substrate close to the second electrode 201.
By adopting the technical scheme, the interference of the useless vibration of the connecting part 10 on the effective vibration of the vibrating part 11 can be relieved by the arrangement of the transition part 12, and the vibration frequency of the vibrating part 11 during working is further improved.
The embodiment also provides a high-frequency AT crystal cutting oscillator system which comprises the high-frequency AT crystal cutting oscillator.
The high-frequency AT cut crystal oscillator system may be a processing system for processing the high-frequency AT cut crystal oscillator, or an equipment system using the high-frequency AT cut crystal oscillator, which is not limited to this.
Compared with the prior art, the technical scheme of the utility model have following advantage:
high frequency AT cut crystal oscillator and system, vibration portion can improve through the etching technology attenuate back the vibration frequency of vibration portion improves the vibration effect of vibration portion just reduces the influence of connecting portion to vibration portion.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious changes and modifications can be made without departing from the scope of the invention.
Claims (10)
1. High frequency AT cuts crystal oscillator, its characterized in that includes:
the vibration device comprises a substrate, a vibration part and a vibration part, wherein one end of the substrate is provided with a connecting part, the other end of the substrate is provided with the vibration part, the vibration part is connected with the connecting part, and the thickness of the vibration part is smaller than that of the connecting part;
the electrode assembly comprises excitation electrodes and extension electrodes, wherein the excitation electrodes are respectively arranged at two ends of the vibration part and are connected with the extension electrodes; the extension electrodes are respectively arranged on two sides of the connecting part.
2. The high-frequency AT-cut crystal oscillator according to claim 1, wherein the excitation electrode includes a first electrode and a second electrode, and the first electrode and the second electrode are respectively disposed on both sides of the vibrating portion and attached to a vibrating region of the vibrating portion.
3. The high-frequency AT-cut crystal oscillator according to claim 2, wherein a radial centerline of the first electrode is parallel to a radial centerline of the second electrode.
4. The high-frequency AT-cut crystal oscillator according to claim 3, wherein a thickness dimension of the vibration region is smaller than a thickness dimension of the other region of the vibration portion.
5. The high-frequency AT crystal cutting oscillator according to claim 4, wherein the thickness dimension range of the vibration region is as follows: 2 to 20 μm.
6. The high-frequency AT-cut crystal oscillator according to claim 2, wherein the extension electrode comprises a third electrode and a fourth electrode, the third electrode and the fourth electrode are respectively disposed on two sides of the connecting portion and attached to the connecting portion, the third electrode is connected to the first electrode, and the fourth electrode is connected to the second electrode.
7. The high-frequency AT-cut crystal oscillator according to claim 1, wherein the substrate is AT-cut.
8. The high-frequency AT crystal cutting oscillator according to claim 1, wherein a transition portion is provided AT a connection portion of the vibrating portion and the connecting portion, and both ends of the transition portion are respectively connected with the vibrating portion and the connecting portion.
9. The high-frequency AT crystal oscillator according to claim 8, wherein the transition portion has a first inclined surface and a second inclined surface, and the first inclined surface and the second inclined surface are respectively disposed on two surfaces of the substrate.
10. A high-frequency AT-cut crystal oscillator system comprising the high-frequency AT-cut crystal oscillator according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221389078.3U CN217445326U (en) | 2022-06-06 | 2022-06-06 | High-frequency AT crystal cutting oscillator and system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202221389078.3U CN217445326U (en) | 2022-06-06 | 2022-06-06 | High-frequency AT crystal cutting oscillator and system |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN217445326U true CN217445326U (en) | 2022-09-16 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202221389078.3U Active CN217445326U (en) | 2022-06-06 | 2022-06-06 | High-frequency AT crystal cutting oscillator and system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN217445326U (en) |
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2022
- 2022-06-06 CN CN202221389078.3U patent/CN217445326U/en active Active
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| GR01 | Patent grant | ||
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Address after: Room 1701, 17 / F, building 6, smart Valley Park, Taihu Software Industrial Park, No. 1421, Wuzhong Avenue, Yuexi street, Wuzhong District, Suzhou, Jiangsu 215000 Patentee after: Suzhou Eboda Microsystem Technology Co.,Ltd. Address before: Room 1701, 17 / F, building 6, smart Valley Park, Taihu Software Industrial Park, No. 1421, Wuzhong Avenue, Yuexi street, Wuzhong District, Suzhou, Jiangsu 215000 Patentee before: Suzhou yiboda Optoelectronic Technology Co.,Ltd. |
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| CP01 | Change in the name or title of a patent holder |