CN217126933U - Silicon material processing device - Google Patents

Abstract

The embodiment of the utility model provides a processing apparatus of silicon material, the processing apparatus of silicon material includes: the device comprises a conveying mechanism for driving a silicon material to move along a preset conveying path, and a treatment cavity and a cleaning mechanism which are sequentially arranged along the preset conveying path, wherein a heating mechanism is arranged in the treatment cavity and used for adjusting the temperature in the treatment cavity, a gas inlet for inputting reaction gas is also arranged in the treatment cavity, and the reaction gas at least comprises halogen-containing gas; under the condition that the heating mechanism adjusts the temperature in the processing cavity to a first preset temperature, the gas inlet can introduce reaction gas into the processing cavity so as to enable halogen-containing gas in the reaction gas to react with metal impurities in the silicon material, and the cleaning mechanism is used for cleaning the reacted silicon material. The embodiment of the utility model provides an in, can avoid using a large amount of chemical reagent, save the cost that silicon material handled, reduce the environmental protection pressure, and processing apparatus can handle the silicon material of size difference.

Description

Silicon material processing device

Technical Field

The utility model relates to a single crystal manufacturing technical field especially relates to a processing apparatus of silicon material.

Background

In recent years, photovoltaic power generation has been increasingly emphasized and vigorously developed by countries in the world as a green energy source and one of the main energy sources for human sustainable development. The monocrystalline silicon wafer is used as a basic material for photovoltaic power generation and has wide market demand. The monocrystalline silicon wafer is generally obtained by slicing a silicon rod, and the silicon rod can be generally obtained by growing a silicon material.

In practical applications, the silicon material may be primary polysilicon or a redraw material, and in the prior art, in order to reduce the environmental protection pressure, before the silicon material is used to draw the silicon rod, the silicon material is usually cleaned with a reagent such as an acidic solution or an alkaline solution to remove impurities such as metals and metal compounds mixed in the silicon material.

However, when chemical reagents such as an acidic solution or an alkaline solution are used for cleaning the silicon material, the consumption of the chemical reagents such as the acidic solution or the alkaline solution is large, which easily causes high cleaning cost of the silicon material and large environmental protection pressure; moreover, the quality of the silicon rod produced from the cleaned silicon material still hardly meets the requirement of increasing the high quality (crystallization rate/conversion efficiency) of the silicon rod.

SUMMERY OF THE UTILITY MODEL

In view of the above, embodiments of the present invention are proposed in order to provide a silicon material processing apparatus that overcomes or at least partially solves the above problems.

In order to solve the problem, the embodiment of the utility model discloses a processing apparatus of silicon material, include: a conveying mechanism for driving the silicon material to move along a preset conveying path, and a processing cavity and a cleaning mechanism which are sequentially arranged along the preset conveying path, wherein,

the device comprises a processing cavity, a heating mechanism, a gas inlet and a gas outlet, wherein the processing cavity is internally provided with the heating mechanism, the heating mechanism is used for adjusting the temperature in the processing cavity, the processing cavity is also internally provided with the gas inlet used for inputting reaction gas, and the reaction gas at least comprises halogen-containing gas;

under the condition that the heating mechanism adjusts the temperature in the treatment cavity to a first preset temperature, the gas inlet can introduce the reaction gas into the treatment cavity so as to enable the halogen-containing gas in the reaction gas to react with the metal impurities in the silicon material, and the cleaning mechanism is used for cleaning the reacted silicon material.

Optionally, the treatment cavity is sequentially provided with a first inlet and a first outlet along the preset conveying path, wherein the first inlet and the first outlet are used for penetrating through the conveying mechanism;

the treatment chamber is further provided with a first gate for sealing the first inlet and a second gate for sealing the first outlet.

Optionally, the cleaning mechanism comprises at least two spraying mechanisms for spraying cleaning solution to the silicon material, and at least two cleaning tanks arranged corresponding to the spraying mechanisms;

the at least two spraying mechanisms are sequentially arranged along the preset conveying path, one cleaning groove is correspondingly arranged below the spraying mechanism, and the cleaning groove is used for recovering the corresponding cleaning liquid sprayed by the spraying mechanism to the silicon material.

Optionally, the cleaning solution includes: at least one of lactic acid, hydrofluoric acid, and nitric acid.

Optionally, the processing apparatus further includes a drying mechanism, and the drying mechanism is disposed on the preset conveying path;

the drying mechanism is connected to one side of the cleaning mechanism, which is far away from the processing cavity, and is used for drying the cleaned silicon material.

Optionally, the drying mechanism comprises: stoving case and heating member, the stoving case connect in wiper mechanism keeps away from one side of treatment chamber, the heating member is located the stoving incasement, the heating member is used for adjusting the temperature of stoving incasement the heating member will under the temperature regulation to the second in the stoving incasement predetermines the condition of temperature, the stoving case can be used to dry the silicon material.

Optionally, the drying box is sequentially provided with a second inlet and a second outlet along the preset conveying path, wherein the second inlet and the second outlet are used for penetrating through the conveying mechanism;

the drying box is also provided with a third gate for sealing the second inlet and a fourth gate for sealing the second outlet.

Optionally, the transportation mechanism comprises a driving member, a conveying member and a carrying tray for placing the silicon material;

the driving part is connected with the conveying part, the conveying part is connected with the bearing disc, the driving part is used for driving the conveying part to move along the preset conveying path, and the movement of the conveying part drives the silicon material in the bearing disc to move along the preset conveying path.

Optionally, the material of the carrier tray includes: at least one of quartz, alumina, graphite, carbon-carbon, and silicon carbide.

Optionally, the processing device further comprises a transparent window, and a through hole is formed in the side wall of the processing cavity;

the transparent window is embedded in the through hole.

Optionally, the halogen-containing gas comprises: at least one of chlorine, bromine gas, fluorine gas, carbon tetrachloride, hydrogen chloride and freon;

the reaction gas further includes an inert gas including: at least one of nitrogen, argon, helium.

Optionally, the first preset temperature is 700 ℃ to 1300 ℃.

The embodiment of the utility model provides a include following advantage:

the embodiment of the utility model provides an in, transport mechanism can drive silicon material is followed predetermine transfer path motion, and pass through in proper order on the transfer path the treatment chamber with wiper mechanism. Specifically, transport mechanism can drive silicon material is advanced to be gone into the treatment chamber, heating device can earlier with the temperature regulation in the treatment chamber is to first preset temperature, then can pass through the air inlet to the treatment chamber lets in reactant gas makes halogenous gas in the reactant gas can with metal impurity in the silicon material reacts, makes metal impurity with silicon material separation, in order to improve silicon material's purity. The conveying mechanism can also drive the silicon material to enter the cleaning mechanism, so that the cleaning mechanism can clean the reacted silicon material, further remove impurities in the silicon material, and obtain the silicon material with higher purity. In the embodiment of the utility model, the metal impurities in the silicon material are removed by adopting the reaction gas, and then the impurities in the silicon material are further cleaned by using the cleaning liquid, so that a large amount of chemical reagents can be avoided, the treatment cost is saved, and the environmental protection pressure is reduced; moreover, metal impurities in the silicon material can be fully removed, so that the silicon material treated by the treatment device can be directly put into a furnace for use without special treatment or changing crystal pulling process conditions, and the quality of the produced silicon rod is higher; the embodiment of the utility model provides an in processing apparatus can also handle the different silicon material of size, the commonality is better.

Drawings

FIG. 1 is a schematic structural diagram of an embodiment of a silicon material processing apparatus according to the present invention;

FIG. 2 is a flow chart illustrating the steps of an embodiment of a method of processing a silicon material according to the present invention;

fig. 3 is a flow chart illustrating the steps of another embodiment of the method for processing silicon material according to the present invention.

Reference numerals:

1-a transportation mechanism, 11-a driving member, 12-a conveying member, 13-a bearing disc, 2-a processing chamber, 21-an air inlet, 22-an air outlet, 23-a first inlet, 24-a first outlet, 25-a first gate, 26-a second gate, 3-a cleaning mechanism, 31-a spraying mechanism, 32-a cleaning tank, 4-a heating mechanism, 5-a drying mechanism, 51-a drying box, 511-a second inlet, 512-a second outlet, 513-a third gate, 514-a fourth gate, 52-a heating member, 6-a transparent window and 7-a silicon material.

Detailed Description

In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention is described in detail with reference to the accompanying drawings and the detailed description.

One of the core ideas of the embodiment of the utility model is to disclose a silicon material processing device.

Referring to fig. 1, a schematic structural diagram of an embodiment of the silicon material processing apparatus of the present invention is shown, which specifically includes: the device comprises a conveying mechanism 1 for driving a silicon material 7 to move along a preset conveying path, and a processing chamber 2 and a cleaning mechanism 3 which are sequentially arranged along the preset conveying path, wherein a heating mechanism 4 is arranged in the processing chamber 2, the heating mechanism 4 is used for adjusting the temperature in the processing chamber 2, a gas inlet 21 for inputting reaction gas is also arranged in the processing chamber 2, and the reaction gas at least comprises halogen-containing gas; in the case that the heating mechanism 4 adjusts the temperature in the processing chamber 2 to the first preset temperature, the gas inlet 21 may introduce a reaction gas into the processing chamber 2 so as to react a halogen-containing gas in the reaction gas with metal impurities in the silicon material 7, and the cleaning mechanism 3 is configured to clean the reacted silicon material 7.

The embodiment of the utility model provides an in, transport mechanism 1 can drive silicon material 7 along predetermineeing transfer path motion to process chamber 2 and wiper mechanism 3 on the transfer path in proper order. Specifically, the conveying mechanism 1 can drive the silicon material 7 to enter the processing chamber 2, the heating device can adjust the temperature in the processing chamber 2 to a first preset temperature, and then the reaction gas can be introduced into the processing chamber 2 through the gas inlet 21, so that the halogen-containing gas in the reaction gas can react with the metal impurities in the silicon material 7, the metal impurities and the silicon material 7 are separated, and the purity of the silicon material 7 is improved. The conveying mechanism 1 can also drive the silicon material 7 to enter the cleaning mechanism 3, so that the cleaning mechanism 3 can clean the reacted silicon material 7, further remove impurities in the silicon material 7, and obtain the silicon material 7 with higher purity. In the embodiment of the utility model, the reaction gas is firstly adopted to remove the metal impurities in the silicon material 7, and then the cleaning liquid is used to further clean the impurities in the silicon material 7, so that a large amount of chemical reagents can be avoided, the cost for treating the silicon material 7 is saved, and the environmental protection pressure is reduced; moreover, metal impurities in the silicon material 7 can be fully removed, so that the silicon material 7 treated by the treatment device can be directly put into a furnace for use without special treatment or changing the crystal pulling process conditions, and the produced silicon rod has high quality, high crystal forming rate and high conversion efficiency; the embodiment of the utility model provides an in processing apparatus can also handle the different silicon material 7 of size, the commonality is better.

Specifically, after the silicon material 7 is reacted, metal compounds, organic impurities, inorganic impurities and the like are likely to remain on the surface of the silicon material 7, and the cleaning mechanism 3 can further remove the metal compounds, organic impurities, inorganic impurities and the like remaining on the surface of the silicon material 7, so that the silicon material 7 with high purity is obtained.

The silicon material 7 in the embodiment of the present invention can be a silicon material for pulling a production silicon rod, for example: silicon materials recovered in the process of producing silicon wafers or silicon rods and the like. The embodiment of the utility model provides an in silicon material 7's specification can be for big lump material, small-size crushed aggregates, granule material etc. makes the embodiment of the utility model provides an in the processing apparatus can adapt to more kind silicon material 7.

For example, the silicon material 7 may be a virgin granular polysilicon or a recycled redraw material, and the average grain size of the granular polysilicon may be 0.5 to 4 mm. The redraw material may include: the average particle size of the edge leather material can be 20-80mm, the average particle size of the slice thick sheet material can be 10-50 mm, and the average particle size of the broken small material can be 3-8 mm.

Specifically, the processing chamber 2 may be provided with a gas inlet 21, and the reaction gas may be input into the processing chamber 2 through the gas inlet 21, and in practical applications, the inert gas may be input into the processing chamber 2 through the gas inlet 21.

Specifically, the processing chamber 2 may further be provided with an air outlet 22, and air in the processing chamber 2 may be exhausted through the air outlet 22, so that the pressure and the gas composition in the processing chamber 2 may be adjusted. For example, an inert gas can be introduced into the process chamber 2 through the gas inlet 21 and the air in the process chamber 2 can be exhausted through the gas outlet 22, so that the inert gas can replace the air in the process chamber 2 and avoid the air from interfering with the reaction of the halogen-containing gas and the metal impurities in the silicon material 7.

The embodiment of the utility model provides an in transport mechanism 1 can be connected with load structure including drive structure and load structure, drive structure, and load structure can place silicon material 7, and like this, drive structure drive load structure motion, load structure's motion can drive silicon material 7 motion.

Further, the driving structure can drive the silicon material 7 on the load-bearing structure to move along a preset conveying path, so that the silicon material 7 can be continuously treated, the treatment of the large-batch silicon material 7 is facilitated, and the efficiency is high.

Specifically, the driving structure can drive the silicon material 7 on the load-carrying structure to move along a preset conveying path, and the processing chamber 2 and the cleaning mechanism 3 are sequentially arranged along the preset conveying path, so that the silicon material 7 can be sequentially processed by the processing chamber 2 and the cleaning mechanism 3. The preset transmission path can be set according to the actual requirement, and the embodiment of the utility model provides a do not do specific limit to this.

Specifically, the drive structure can be motor or cylinder etc., the load structure can include conveying and be used for placing the silicon material bear the dish, the drive structure can pass through conveying drive bear the dish motion, conveying can be chain conveyor, roller conveyer or band conveyer etc. the material that bears the dish can include: at least one of quartz, alumina, graphite, carbon-carbon, and silicon carbide, to which the embodiments of the present invention are not particularly limited.

The embodiment of the utility model provides an in treatment chamber 2 can be equipped with the space of placing heating mechanism 4 and silicon material 7 for silicon material 7 can get into and handle in treatment chamber 2.

The embodiment of the utility model provides an in heating mechanism 4 for being used for adjusting the equipment of the interior temperature of treatment chamber 2, for example, heating mechanism 4 can be electromagnetic heater, infrared heater or resistance heater etc. the embodiment of the utility model provides a do not do specifically to this and restrict.

Specifically, in the case where the heating mechanism 4 heats the temperature inside the processing chamber 2 to the first preset temperature, the halogen-containing gas may react with the metal impurities in the silicon material 7 to generate a metal compound having a low boiling point, and at the first preset temperature, the metal compound may be carried away in a gaseous state by the gas flow. In practical application, the halogen-containing gas firstly reacts with the metal impurities on the surface layer of the silicon material 7, so that the concentration of the metal impurities on the surface layer of the silicon material 7 is reduced, and a concentration difference is formed between the metal impurities and the metal impurities inside the matrix of the silicon material 7, and at a preset temperature, the metal impurities can be continuously diffused from a high-concentration area to a low-concentration area, so that the metal impurities inside the matrix of the silicon material 7 can be absorbed to the surface layer of the silicon material 7 from the inside of the matrix of the silicon material 7, and react with the halogen-containing gas to generate volatile metal compounds, the metal impurities can be separated from the silicon material 7, and further the purity of the silicon material 7 can be improved.

Further, the reaction gas is introduced through the gas inlet 21 and then kept for 5-120 minutes, so that the halogen-containing gas can fully react with the metal impurities in the silicon material 7, and the metal impurities in the silicon material 7 can be more thoroughly removed.

Specifically, the metal impurities may include metals and metal compounds thereof. For example: calcium, aluminum, iron, magnesium, titanium, and the like, and their corresponding metal compounds.

Specifically, the conveying mechanism 1 can drive the silicon material 7 to enter the cleaning mechanism 3 from the processing chamber 2, and the cleaning mechanism 3 can clean the silicon material 7, so as to further remove residual impurities and the like in the silicon material 7 and further improve the purity of the silicon material 7.

Specifically, the reaction gas at least includes a halogen-containing gas, and the concentration of the halogen-containing gas may be set according to actual needs, which is not specifically limited by the embodiments of the present invention.

Alternatively, the halogen-containing gas may comprise: at least one of chlorine, bromine gas, fluorine gas, carbon tetrachloride, hydrogen chloride and freon. In practical application, halogen-containing gases such as chlorine, bromine, fluorine, carbon tetrachloride, hydrogen chloride, freon and the like easily react with metal impurities in the silicon material 7 in a high-temperature environment, but react with silicon slowly, so that the loss of the silicon material 7 can be reduced.

In practical application, the reaction gas may further include an inert gas, and the inert gas does not react with the silicon material 7 in a high-temperature environment, so that the loss of the silicon material 7 can be reduced. The inert gas may include: at least one of nitrogen, argon and helium.

Specifically, the ratio of the halogen-containing gas to the inert gas may be any one of 1:999 to 999:1, and the concentration of the halogen-containing gas may be adjusted by adjusting the ratio between the halogen-containing gas and the inert gas, and may be adjusted according to the actual processing amount of the silicon material 7, which is not particularly limited in the embodiment of the present invention.

Alternatively, the first preset temperature may be 700 ℃ to 1300 ℃. In practical application, under the condition that the first preset temperature is 700-1300 ℃, the halogen-containing gas can react with metal impurities in the silicon material 7 to generate a compound, and the compound is easy to volatilize under the environment of 700-1300 ℃, so that the compound is convenient to separate from the silicon material 7, and the purity of the silicon material 7 is improved.

In another embodiment of the present invention, the treatment chamber 2 may be provided with a first inlet 23 and a first outlet 24 for passing through the transportation mechanism 1 in sequence along a predetermined transportation path; the treatment chamber 2 may also be provided with a first shutter 25 for sealing the first inlet 23 and a second shutter 26 for sealing the first outlet 24.

The embodiment of the utility model provides an in, because the first import 23 and the first export 24 of process chamber 2 set gradually along predetermineeing transfer path, transport mechanism 1 drives silicon material 7 along the in-process of predetermineeing the transfer path motion, can follow first import 23 and get into process chamber 2, leaves process chamber 2 from first export 24. Under the condition that the conveying mechanism 1 drives the silicon material 7 to enter the treatment cavity 2, the first inlet 23 can be sealed by the first gate 25, and the first outlet 24 is sealed by the second gate 26, so that the treatment cavity 2 is sealed, heat dissipation in the treatment cavity 2 can be avoided, the reaction stability of the halogen-containing gas and the metal impurities in the silicon material 7 is improved, and the metal impurities in the silicon material 7 are sufficiently removed.

Specifically, a first gate 25 may be used to open or seal the first inlet 23 and a second gate 26 may be used to open or seal the first outlet 24. Specifically, the first gate 25 and the second gate 26 may be controlled electrically or manually, and the embodiment of the present invention is not limited thereto.

In another optional embodiment of the present invention, the cleaning mechanism 3 may include at least two spraying mechanisms 31 for spraying the cleaning solution onto the silicon material 7, and at least two cleaning tanks 32 corresponding to the spraying mechanisms 31; at least two spraying mechanisms 31 can be sequentially arranged along a preset conveying path, one cleaning tank 32 can be correspondingly arranged below one spraying mechanism 31, and the cleaning tank 32 can be used for recovering cleaning liquid sprayed to the silicon material 7 by the corresponding spraying mechanism 31.

The embodiment of the utility model provides an in, at least two spray mechanism 31 can spray the washing liquid to getting into the silicon material 7 of wiper mechanism 3 in proper order to further get rid of 7 remaining impurities in surface of silicon material, further improve the purity of silicon material 7. One cleaning tank 32 is correspondingly arranged below one spraying mechanism 31, and can recover the cleaning liquid sprayed to the silicon material 7 by the corresponding spraying mechanism 31, thereby avoiding environmental pollution and reducing environmental protection pressure.

Specifically, the conveying mechanism 1 can drive the silicon material 7 to sequentially pass through at least two spraying mechanisms 31, so that the silicon material 7 can be cleaned at least twice, and the cleaning is cleaner.

Specifically, the cleaning mechanism 3 may further include at least two liquid storage tanks for storing the cleaning liquid, the liquid outlet tank may be disposed corresponding to the spraying mechanism 31, the liquid storage tanks may be connected to the corresponding spraying mechanism 31 through pipelines, and the liquid storage tanks may provide the cleaning liquid to the corresponding spraying mechanism 31.

Optionally, the cleaning solution may include: at least one of lactic acid, hydrofluoric acid, and nitric acid. In practical application, when the cleaning solution is lactic acid, hydrofluoric acid or nitric acid, organic impurities and inorganic impurities attached to the surface of the silicon material 7 can be washed away.

Specifically, along the preset conveying path, a first spraying mechanism and a second spraying mechanism may be sequentially provided, the first spraying mechanism may spray lactic acid to the silicon material 7, and the second spraying mechanism may spray hydrofluoric acid to the silicon material 7.

In example 1, the metal impurities in the silicon material 7 are reacted with the halogen-containing gas, and then the silicon material 7 is cleaned with the acid cleaning solution such as lactic acid, hydrofluoric acid, and nitric acid to purify the silicon material 7.

In comparative example 1, the silicon material 7 was cleaned directly with the acid cleaning solution without using the halogen-containing gas to react with the gaseous impurities in the silicon material 7, as compared with example 1. As table 1, the amount of pickling solution used in example 1 and comparative example 1 is shown in comparison.

Specifically, taking the silicon material 7 as a redraw material as an example, the method may specifically include: the average particle size of the side leather materials can be 20-80mm, the average particle size of the sliced thick sheets can be 10-50 mm, and the average particle size of the broken small materials can be 3-8 mm.

As can be seen from Table 1, for the same kind of silicon material 7, by adopting the embodiment of the present invention, the halogen-containing gas is firstly used to react with the metal in the silicon material 7, and then the pickling solution is used to clean the silicon material 7, so that the consumption of the pickling solution can be saved. Moreover, when the silicon material 7 is cleaned by the method in the embodiment of the present invention, the larger the particle size of the redraw material, the less the pickling solution is consumed.

Table 1:

in another optional embodiment of the present invention, the silicon material processing apparatus may further include a drying mechanism 5, and the drying mechanism 5 may be disposed on the predetermined conveying path; the drying mechanism 5 can be connected to one side of the cleaning mechanism 3 far away from the processing chamber 2, and the drying mechanism 5 is used for drying the cleaned silicon material 7.

The embodiment of the utility model provides an in, stoving mechanism 5 can carry out drying process to silicon material 7 after the washing to get rid of the moisture on silicon material 7 surface.

Specifically, the treatment cavity 2, the cleaning mechanism 3 and the drying mechanism 5 can be sequentially arranged along a preset conveying path, and the conveying mechanism 1 can drive the silicon material 7 to sequentially pass through the treatment cavity 2, the cleaning mechanism 3 and the drying mechanism 5.

Specifically, the drying mechanism 5 may perform drying treatment on the silicon material 7 by using microwave, vacuum, hot air, or the like.

Alternatively, the drying mechanism 5 may include: drying box 51 and heating member 52, drying box 51 is connected in the one side that wiper mechanism 3 kept away from processing chamber 2, and heating member 52 is located drying box 51, and heating member 52 is used for adjusting the temperature in drying box 51, and under the condition that heating member 52 adjusted the temperature in drying box 51 to the second temperature of predetermineeing, drying box 51 can be used to dry silicon material 7.

The embodiment of the utility model provides an in, heating member 52 can be with the temperature regulation to the second in the stoving case 51 predetermine the temperature to make silicon material 7 can carry out drying process in stoving case 51, dry silicon material 7 through the mode of heating, it is comparatively simple and convenient.

Specifically, the second is preset the temperature and can be set up according to actual need, the embodiment of the utility model provides a do not do specifically to this and restrict.

Specifically, stoving mechanism 5 can also include thermal insulation cotton or thermal-insulated cotton, and thermal insulation cotton or thermal-insulated cotton can locate stoving case 51 in, and under the condition that silicon material 7 got into stoving case 51, thermal insulation cotton or thermal-insulated cotton can wrap up outside silicon material 7 to avoid being used for the heat loss of stoving silicon material 7, accelerate the stoving speed to silicon material 7.

Specifically, the drying mechanism 5 may further include an air pump, and the air pump may be disposed in the drying box 51 and used in cooperation with the heating element 52 to accelerate the drying speed of the silicon material 7.

Optionally, the drying box 51 is sequentially provided with a second inlet 511 and a second outlet 512 for penetrating the transportation mechanism 1 along a preset transportation path; the drying box 51 is further provided with a third shutter 513 for sealing the second inlet 511 and a fourth shutter 514 for sealing the second outlet 512.

In the embodiment of the present invention, since the second inlet 511 and the second outlet 512 of the drying box 51 are sequentially disposed along the predetermined conveying path, the conveying mechanism 1 drives the silicon material 7 to move along the predetermined conveying path, so that the silicon material can enter the drying box 51 from the second inlet 511, and leave the drying box 51 from the second outlet 512. Under the condition that the conveying mechanism 1 drives the silicon material 7 to enter the drying box 51, the third gate 513 can be used for sealing the second inlet 511, and the fourth gate 514 can be used for sealing the second outlet 512, so that the drying box 51 is sealed, heat dissipation in the drying box 51 can be avoided, and the drying efficiency of the drying box 51 on the silicon material 7 is improved.

Specifically, the third gate 513 is used to open or seal the second inlet 511, and the fourth gate 514 is used to open or seal the second outlet 512. Specifically, the third gate 513 and the fourth gate 514 may be controlled electrically or manually, and the embodiment of the present invention is not limited in this respect.

Alternatively, the transportation mechanism 1 may comprise a driving member 11, a conveying member 12 and a carrier tray 13 for placing the silicon material 7; the driving member 11 may be connected to the conveying member 12, the conveying member 12 may be connected to the carrying tray 13, the driving member 11 may be configured to drive the conveying member 12 to move along a predetermined conveying path, and the movement of the conveying member 12 may drive the silicon material 7 in the carrying tray 13 to move along the predetermined conveying path.

The embodiment of the utility model provides an in, bear the weight of silicon material 7 in the dish 13 through conveying 12 drive and follow the motion of predetermineeing the route for silicon material 7 gets into in proper order and handles along the process chamber 2 and the wiper mechanism 3 of predetermineeing the transfer path setting, can obtain the higher silicon material 7 of purity, and is comparatively simple convenient.

Specifically, driving member 11 may be a motor or a cylinder, etc., and conveying member 12 may be a chain conveyor, a roller conveyor or a belt conveyor, etc., to which the embodiment of the present invention is not specifically limited.

Optionally, the material of the carrier tray 13 may include: at least one of quartz, alumina, graphite, carbon-carbon, and silicon carbide. In practical application, when the material of the carrier plate 13 is quartz, alumina, graphite, carbon or silicon carbide, the silicon material 7 can be prevented from reacting with the carrier plate 13 to generate new impurities in the drying process.

Optionally, the silicon material 7 processing device may further include a transparent window 6, and a through hole may be formed in the sidewall of the processing chamber 2; the transparent window 6 can be embedded in the through hole.

The embodiment of the utility model provides an in, transparent window 6 inlays on locating the lateral wall of treatment chamber 2, can observe the condition in the treatment chamber 2 through transparent window 6, is convenient for know the processing procedure of silicon material 7.

In practical applications, a transparent window 6 may be correspondingly disposed on a side wall of the cleaning mechanism 3 to facilitate observation of the cleaning process of the silicon material 7.

To sum up, the embodiment of the utility model provides a processing apparatus of silicon material include following advantage at least:

the embodiment of the utility model provides an in, transport mechanism can drive silicon material is followed predetermine transfer path motion, and pass through in proper order on the transfer path the treatment chamber with wiper mechanism. Specifically, transport mechanism can drive silicon material is advanced to be gone into the treatment chamber, heating device can earlier with the temperature regulation in the treatment chamber is to first preset temperature, then can pass through the air inlet to the treatment chamber lets in reactant gas makes halogenous gas in the reactant gas can with metal impurity in the silicon material reacts, makes metal impurity with silicon material separation, in order to improve silicon material's purity. The conveying mechanism can also drive the silicon material to enter the cleaning mechanism, so that the cleaning mechanism can clean the reacted silicon material, further remove impurities in the silicon material, and obtain the silicon material with higher purity. In the embodiment of the utility model, the metal impurities in the silicon material are removed by adopting the reaction gas, and then the impurities in the silicon material are further cleaned by using the cleaning liquid, so that a large amount of chemical reagents can be avoided, the cost for treating the silicon material is saved, and the environmental protection pressure is reduced; moreover, metal impurities in the silicon material can be fully removed, so that the silicon material treated by the treatment device can be directly put into a furnace for use without special treatment or changing crystal pulling process conditions, and the quality of the produced silicon rod is higher; the embodiment of the utility model provides an in processing apparatus can also handle the different silicon material of size, the commonality is better.

Referring to fig. 2, a flow chart illustrating steps of an embodiment of a method for processing a silicon material according to the present invention is shown, and specifically, the method may include the following steps:

step 201: and controlling the conveying mechanism to drive the silicon material to enter the treatment cavity along a preset conveying path.

The embodiment of the utility model provides an in, can control transport mechanism and drive silicon material along predetermineeing the transfer path motion to it is in to enter the setting predetermine the last treatment chamber of transfer path.

Specifically, the conveying mechanism is used for driving the silicon material to move, the moving path of the conveying mechanism is the preset conveying path, and the preset conveying path can be set according to actual requirements. The processing chamber may be provided with a space for accommodating the silicon material. The specification of silicon material can be big lump material, small-size crushed aggregates, granule material etc. this is not specifically limited by the embodiment of the utility model.

Furthermore, the conveying mechanism can move along the preset path size, so that the silicon material can be continuously driven to move along the preset conveying path, the treatment of large batches of silicon materials is convenient to realize, and the efficiency is high.

In practical application, the first gate can be used to open the first inlet of the processing chamber, and then the transportation mechanism is controlled to drive the silicon material to enter the processing chamber.

Specifically, the transportation mechanism can comprise a driving structure and a load-carrying structure for placing the silicon material; the driving structure can be connected with the load-carrying structure, and the driving structure can be used for driving the load-carrying structure to move along the preset conveying path, so that the silicon material in the bearing disc can be driven to move along the preset conveying path.

Specifically, the drive structure can be motor or cylinder etc., the load structure can include conveying and be used for placing the silicon material bear the dish, the drive structure can pass through conveying drive bear the dish motion, conveying can be chain conveyor, roller conveyer or band conveyer etc. the material that bears the dish can include: at least one of quartz, alumina, graphite, carbon-carbon, and silicon carbide, to which the embodiments of the present invention are not particularly limited.

In practical application, the silicon material can be firstly placed on the bearing disc, specifically, the silicon material can be manually loaded on the bearing disc, and then the driving piece is controlled to drive the conveying piece to move along the preset conveying path, so that the conveying piece can drive the silicon material on the bearing disc to enter the treatment cavity along the preset conveying path, and the treatment of a large batch of silicon material is facilitated.

Step 202: and adjusting the temperature in the treatment cavity to a first preset temperature by adopting a heating mechanism.

The embodiment of the utility model provides an in, can adopt heating mechanism will temperature regulation to first preset temperature in the treatment chamber, specifically, heating mechanism can locate in the treatment chamber.

Specifically, between the temperature in the processing chamber being adjusted by the heating mechanism, the first gate may be used to seal the first inlet of the processing chamber, and the second gate may seal the first outlet of the processing chamber, so as to seal the processing chamber, thereby accelerating the speed at which the heating mechanism adjusts the temperature in the processing chamber to the first preset temperature.

Specifically, the first preset temperature may be 700 ℃ to 1300 ℃, so that the halogen-containing gas may react with the metal impurities in the silicon material to generate a compound, and the compound is easily volatilized in an environment of 700 ℃ to 1300 ℃, so as to be conveniently separated from the silicon material.

Step 203: and inputting a reaction gas at least comprising a halogen-containing gas into the processing cavity through the gas inlet so as to enable the halogen-containing gas to react with the impurities in the silicon material.

In the embodiment of the present invention, when the temperature in the processing chamber reaches the first preset temperature, the reaction gas at least including the halogen-containing gas can be input into the processing chamber through the air inlet, so that the halogen-containing gas reacts with the metal impurities in the silicon material. Specifically, at the first preset temperature, the halogen-containing gas and the metal impurities in the silicon material can generate a compound, the compound has a lower boiling point at the first preset temperature and is easy to volatilize, so that the metal impurities can be separated from the silicon material, and the purity of the silicon material is improved.

Specifically, the halogen-containing gas may include: at least one of chlorine, bromine gas, fluorine gas, carbon tetrachloride, hydrogen chloride and freon.

Specifically, the reaction gas may further include an inert gas, and the inert gas does not react with the silicon material in a high-temperature environment, so that loss of the silicon material may be reduced. The inert gas may include: at least one of nitrogen, argon, helium. Further, the ratio of the halogen-containing gas to the inert gas may be any one of 1:999 to 999: 1.

Step 204: and controlling the conveying mechanism to drive the silicon material to enter the cleaning mechanism.

The embodiment of the utility model provides an in, can control transport mechanism drives the silicon material gets into wiper mechanism, specifically, wiper mechanism with the treatment chamber can be followed predetermine transfer path and set gradually, transport mechanism can drive the silicon material is advanced to be gone into the treatment chamber, reentrant wiper mechanism.

In practical application, the second gate can be used to open the first outlet of the processing chamber, and then the transportation mechanism is controlled to drive the silicon material to move along the preset conveying path to enter the cleaning mechanism.

Step 205: and cleaning the reacted silicon material by using the cleaning mechanism.

The embodiment of the utility model provides an in, can adopt after wiper mechanism washs the reaction the silicon material, specifically, wiper mechanism can further wash silicon material surface residual impurity further improves the purity of silicon material.

Specifically, at least two spraying mechanisms may be adopted to spray the cleaning solution to the silicon material, and the at least two spraying mechanisms may be sequentially arranged along the preset conveying path. The cleaning solution may include: at least one of lactic acid, hydrofluoric acid, and nitric acid.

To sum up, the embodiment of the utility model provides a processing method of silicon material include following advantage at least:

the embodiment of the utility model provides an in, transport mechanism can drive silicon material is followed predetermine transfer path motion, and pass through in proper order on the transfer path the treatment chamber with wiper mechanism. Specifically, transport mechanism can drive silicon material is advanced to be gone into the treatment chamber, heating device can earlier with the temperature regulation in the treatment chamber is to first preset temperature, then can pass through the air inlet to the treatment chamber lets in reactant gas makes halogenous gas in the reactant gas can with metal impurity in the silicon material reacts, makes metal impurity with silicon material separation, in order to improve silicon material's purity. The conveying mechanism can also drive the silicon material to enter the cleaning mechanism, so that the cleaning mechanism can clean the reacted silicon material, further remove impurities in the silicon material, and obtain the silicon material with higher purity. In the embodiment of the utility model, the metal impurities in the silicon material are removed by adopting the reaction gas, and then the impurities in the silicon material are further cleaned by using the cleaning liquid, so that a large amount of chemical reagents can be avoided, the cost for treating the silicon material is saved, and the environmental protection pressure is reduced; moreover, metal impurities in the silicon material can be fully removed, so that the silicon material treated by the treatment method can be directly put into a furnace for use without special treatment or changing crystal pulling process conditions, and the quality of the produced silicon rod is higher; the embodiment of the utility model provides an in processing apparatus can also handle the different silicon material of size, the commonality is better.

Referring to fig. 3, a flow chart of steps of another embodiment of the method for processing silicon material of the present invention is shown, which specifically includes the following steps:

step 301: and controlling the conveying mechanism to drive the silicon material to enter the treatment cavity along a preset conveying path.

Specifically, the specific implementation process of this step may be executed with reference to step 201, which is not described herein again.

Step 302: and inputting an inert gas into the processing chamber through a gas inlet so as to replace the air in the processing chamber with the inert gas.

The embodiment of the utility model provides an in, can be earlier through the air inlet to process chamber input inert gas, with the use inert gas replaces air in the process chamber avoids the air interference right the processing of silicon material.

Specifically, the process chamber may be first evacuated through the air outlet, and then the inert gas may be input into the process chamber through the air inlet, so as to replace the air in the process chamber with the inert gas.

Specifically, the first gate may be used to seal the first inlet of the process chamber and the second gate may be used to seal the first outlet of the process chamber prior to replacing the atmosphere within the process chamber with the inert gas.

Step 303: and adjusting the temperature in the treatment cavity to a first preset temperature by adopting a heating mechanism.

Specifically, the specific implementation process of this step may be executed with reference to step 202, which is not described herein again.

Step 304: and inputting the reaction gas at least comprising halogen-containing gas into the treatment cavity through the gas inlet.

The embodiment of the utility model provides an in, can pass through the air inlet to handle the intracavity input including at least the gaseous reactant gas who contains halogen, specifically, reactant gas's input volume can be adjusted according to actual demand.

Step 305: and keeping the temperature at the first preset temperature for 5-120 minutes to enable the halogen-containing gas to react with the metal impurities in the silicon material.

Specifically, the temperature in the processing chamber can be maintained at the first preset temperature for 5-120 minutes, so that the halogen-containing gas can fully react with the metal impurities in the silicon material, and the purity of the obtained silicon material is high.

Specifically, in example 2, the granular polysilicon is purified by using the halogen-containing gas, and then the granular polysilicon is cleaned by using the acid washing solution, so as to achieve the purpose of purifying the granular polysilicon. The granular polysilicon of comparative example 2 was not purified with a halogen-containing gas and was not washed with an acid wash, as compared with example 2. The surface metal content is the metal impurity content on the surface of the silicon material, the body metal content is the metal impurity content in the silicon material matrix, the minority carrier lifetime of the head of the first root after furnace charging can reflect the quality of the silicon rod obtained by crystal pulling of the silicon material, and the larger the minority carrier lifetime value of the head of the first root after furnace charging is, the better the corresponding quality of the silicon rod obtained by crystal pulling of the silicon material is.

As can be seen from table 2, the embodiment of the utility model provides an in the mode, use the metal impurities reaction in the granule material polycrystalline silicon that halogenous gas and average particle diameter are 0.5-4 millimeters earlier, reuse pickling solution and wash granule material polycrystalline silicon, the surface metal content and the body metal content of getting rid of granule material polycrystalline silicon that can be better, but also can improve the less life-span of the first root head after throwing the stove of granule material polycrystalline silicon, adopt this granule material polycrystalline silicon to pull, can also improve the quality of silicon rod.

Table 2:

the edge skin material is a material with a roughly arched section cut from a cylindrical single crystal rod when a Czochralski single crystal rod is used for processing a square rod, and is crushed into a block structure with the average grain diameter of 20-80 mm. In example 3, the purpose of purifying the edge cover material was achieved by purifying the edge cover material with a halogen-containing gas and then washing the edge cover material with an acid wash. The offcut of comparative example 3 was not purified with a halogen-containing gas and was not washed with an acid wash, as compared with example 3.

As can be seen from table 3, adopt the embodiment of the utility model provides an in the mode, use earlier the metal reaction in halogenous gas and the limit cladding, reuse pickling solution washing limit cladding again, the first root head minority carrier life-span after can better removing the surface metal content and the body metal content of limit cladding, but also can improve throwing of limit cladding adopts this limit cladding to pull, can also improve the quality of silicon rod.

Table 3:

example 4 the purification of the sliced thick sheets was carried out by purifying the sliced thick sheets having an average particle diameter of 10 to 50 mm with a halogen-containing gas and then washing the sliced thick sheets with an acid washing solution. The sliced thick sheet in comparative example 4 was not purified with a halogen-containing gas and washed with an acid washing solution, as compared with example 4.

As can be seen from table 4, adopt the embodiment of the utility model provides an in the mode, use the metal reaction in halogenous gas and the thick sheet stock of section earlier, use the pickle again to wash the thick sheet stock of section, can be better get rid of the table metal content and the body metal content of the thick sheet stock of section, but also can improve the short life-span of first root head after throwing the stove of the thick sheet stock of section, adopt this thick sheet stock of section to pull, can also improve the quality of silicon rod.

Table 4:

example 5 the purification of crushed small pieces having an average particle size of 3 to 8 mm was carried out by using a halogen-containing gas and then washing the crushed small pieces with an acid washing solution to purify the crushed small pieces. The crushed pellets in comparative example 5 were not purified with a halogen-containing gas and were not washed with an acid wash, as compared with example 5.

It can be seen from table 5, adopt the embodiment of the utility model provides an in the mode, use earlier the metal reaction in halogenous gas and the broken small powder, reuse the pickle and wash broken small powder, the table metal content and the body metal content of getting rid of broken small powder that can be better, but also can improve the first root head minority carrier life-span after throwing the stove of broken small powder, adopt this broken small powder to pull, can also improve the quality of silicon rod.

Table 5:

test data show that before crystal pulling, the method of the embodiment of the utility model is firstly used to react the silicon material with the halogen-containing gas, and then the pickling solution is used for pickling so as to prolong the minority carrier lifetime of the head of the crystal bar manufactured by the dumps. Moreover, the effect of the impurity removal treatment using the halogen-containing gas is different for silicon materials having different particle diameters.

For example: the silicon material can be divided into a primary first silicon material and a secondary silicon material which is reused according to the source. Wherein, the first silicon material can be a silicon material with the average grain diameter of 0.5-4 mm, the first silicon material can be granular polysilicon and the like, the first silicon material is fully reacted with the halogen-containing gas, and after acid cleaning by using acid cleaning solution, the surface metal content can be reduced to 5.1ppbwt, the bulk metal content can be reduced to 4.9ppbwt, and the minority carrier lifetime of the head can be prolonged to 745 mu s after the furnace feeding. The second silicon material can be a silicon material with the average grain diameter of 3-80 mm, and the second silicon material is a redraw material such as a leather material with the average grain diameter of 20-80mm, a slice thick sheet material with the average grain diameter of 10-50 mm, a broken small material with the average grain diameter of 3-8 mm, and the like. After the boundary material is fully reacted with the halogen-containing gas and acid-washed by using acid-washing liquid, the surface metal content can be reduced from 310.1ppbwt to 12ppbwt, the bulk metal content can be reduced to 11.5ppbwt, and the minority carrier lifetime of the head part of the first root can be prolonged to 679 mu s after the furnace is charged. After the sliced thick sheet is fully reacted with the halogen-containing gas and acid washed by using acid washing liquid, the surface metal content can be reduced from 659ppbwt to 16ppbwt, the bulk metal content can be reduced to 16.7ppbwt, and the minority carrier lifetime of the head part can be increased to 603 mu s after the furnace is put into operation. After the crushed small materials are fully reacted with the halogen-containing gas and acid washed by using acid washing liquid, the surface metal content can be reduced from 542ppbwt to 8.5ppbwt, the bulk metal content can be reduced to 6.9ppbwt, and the minority carrier lifetime of the head part of the initial root can be prolonged to 705 mu s after the furnace is put into the furnace.

The above test data show that the reusable silicon material (for example, the second silicon material) contains a large amount of surface metal impurities, and when the reusable silicon material is reacted with the halogen-containing gas and then washed with the acid wash, a large amount of surface metal impurities can be removed, and the effect of removing the surface metal impurities is extremely remarkable.

Adopt the embodiment of the utility model provides an in the silicon material processing method, all can be better get rid of its table metallic impurity and body metallic impurity, improve its throw after the stove first root head minority carrier life-span, be used for the crystal pulling back in addition, can also improve the quality of crystal bar.

Further, the embodiment of the utility model provides a processing method of silicon material can adapt to the silicon material of various sizes, and the commonality is better. Moreover, the treatment method provided by the embodiment of the utility model has the advantages that the metal impurities in the silicon material are removed by the halogen-containing gas, and then the silicon material is cleaned by the pickling solution, so that the silicon material is purified.

Step 306: and inputting inert gas into the processing cavity through the gas inlet so as to cool the temperature in the processing cavity.

Specifically, after the halogen-containing gas and the metal impurities in the silicon material have sufficiently reacted, an inert gas may be input to the process chamber through the gas inlet to cool the temperature of the process chamber. In particular, the temperature within the process chamber may be cooled to below 200 ℃.

Step 307: and controlling the conveying mechanism to drive the silicon material to enter the cleaning mechanism.

Specifically, the specific implementation process of this step may be executed with reference to step 204, which is not described herein again.

Step 308: and cleaning the reacted silicon material by using the cleaning mechanism.

Specifically, the specific implementation process of this step may be executed with reference to step 205, which is not described herein again.

Step 309: and controlling the conveying mechanism to drive the silicon material to enter a drying mechanism.

The embodiment of the utility model provides an in, can control transport mechanism drives the silicon material gets into stoving mechanism, specifically, stoving mechanism can locate predetermine on the transfer path, the process chamber wiper mechanism with stoving mechanism follows predetermine the transfer path and can set gradually, transport mechanism can drive the silicon material is advanced to be gone into wiper mechanism reenters stoving mechanism.

In practical application, a third valve can be adopted to open the second inlet of the drying mechanism, and then the conveying mechanism is controlled to drive the silicon material to move along the preset conveying path to enter the drying mechanism.

Step 310: and drying the cleaned silicon material by adopting the drying mechanism.

The embodiment of the utility model provides an in, can adopt after drying mechanism dries and cleans silicon material, specifically, drying mechanism can dry silicon material remaining moisture in surface.

In practical applications, before the drying mechanism starts to dry the cleaned silicon material, the third valve may be used to seal the second inlet of the drying mechanism, and the fourth valve may seal the second outlet of the drying mechanism.

To sum up, the embodiment of the utility model provides a processing method of silicon material include following advantage at least:

the embodiment of the utility model provides an in, transport mechanism can drive silicon material is followed predetermine transfer path motion, and pass through in proper order on the transfer path the treatment chamber with wiper mechanism. Specifically, transport mechanism can drive silicon material is advanced to be gone into the treatment chamber, heating device can earlier with the temperature regulation in the treatment chamber is to first preset temperature, then can pass through the air inlet to the treatment chamber lets in reactant gas makes halogenous gas in the reactant gas can with metal impurity in the silicon material reacts, makes metal impurity with silicon material separation, in order to improve silicon material's purity. The conveying mechanism can also drive the silicon material to enter the cleaning mechanism, so that the cleaning mechanism can clean the reacted silicon material, further remove impurities in the silicon material, and obtain the silicon material with higher purity. In the embodiment of the utility model, the metal impurities in the silicon material are removed by adopting the reaction gas, and then the impurities in the silicon material are further cleaned by using the cleaning liquid, so that a large amount of chemical reagents can be avoided, the cost for treating the silicon material is saved, and the environmental protection pressure is reduced; moreover, metal impurities in the silicon material can be fully removed, so that the silicon material treated by the treatment method can be directly put into a furnace for use without special treatment or changing crystal pulling process conditions, and the quality of the produced silicon rod is higher; the embodiment of the utility model provides an in processing apparatus can also handle the different silicon material of size, the commonality is better.

It should be noted that, for simplicity of description, the method embodiments are described as a series of acts or combination of acts, but those skilled in the art should understand that the present invention is not limited by the described order of acts, as some steps may be performed in other orders or simultaneously according to the present invention. Furthermore, those skilled in the art will also appreciate that the embodiments described in the specification are presently preferred and that no particular act is required in order to implement the invention.

As for the method embodiment, since it is basically similar to the apparatus embodiment, the description is simple, and the relevant points can be referred to the partial description of the method embodiment.

The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.

While preferred embodiments of the present invention have been described, additional variations and modifications of these embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. It is therefore intended that the following claims be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the embodiments of the invention.

Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or terminal that comprises the element.

The above detailed description is made on the silicon material processing device provided by the present invention, and the specific examples are applied herein to explain the principles and embodiments of the present invention, and the description of the above examples is only used to help understanding the method and core ideas of the present invention; meanwhile, for the general technical personnel in the field, according to the idea of the present invention, there are changes in the specific implementation and application scope, to sum up, the content of the present specification should not be understood as the limitation of the present invention.

Claims (12)

1. A silicon material processing apparatus, comprising: a conveying mechanism for driving the silicon material to move along a preset conveying path, and a processing cavity and a cleaning mechanism which are sequentially arranged along the preset conveying path, wherein,

the device comprises a processing cavity, a heating mechanism, a gas inlet and a gas outlet, wherein the processing cavity is internally provided with the heating mechanism, the heating mechanism is used for adjusting the temperature in the processing cavity, the processing cavity is also internally provided with the gas inlet used for inputting reaction gas, and the reaction gas at least comprises halogen-containing gas;

under the condition that the heating mechanism adjusts the temperature in the treatment cavity to a first preset temperature, the gas inlet can introduce the reaction gas into the treatment cavity so as to enable the halogen-containing gas in the reaction gas to react with the metal impurities in the silicon material, and the cleaning mechanism is used for cleaning the reacted silicon material.

2. The processing apparatus according to claim 1, wherein the processing chamber is provided with a first inlet and a first outlet for passing through the transport mechanism in sequence along the preset conveying path;

the treatment chamber is further provided with a first gate for sealing the first inlet and a second gate for sealing the first outlet.

3. The processing apparatus according to claim 1, wherein the cleaning mechanism comprises at least two spraying mechanisms for spraying a cleaning solution to the silicon material, and at least two cleaning tanks provided corresponding to the spraying mechanisms;

the at least two spraying mechanisms are sequentially arranged along the preset conveying path, one cleaning groove is correspondingly arranged below the spraying mechanism, and the cleaning groove is used for recovering the corresponding cleaning liquid sprayed by the spraying mechanism to the silicon material.

4. A treatment device according to claim 3, wherein said cleaning liquid comprises: at least one of lactic acid, hydrofluoric acid, and nitric acid.

5. The processing apparatus according to claim 1, further comprising a drying mechanism provided on the preset conveying path;

the drying mechanism is connected to one side of the cleaning mechanism, which is far away from the processing cavity, and is used for drying the cleaned silicon material.

6. The processing apparatus according to claim 5, wherein the drying mechanism comprises: stoving case and heating member, the stoving case connect in wiper mechanism keeps away from one side of treatment chamber, the heating member is located the stoving incasement, the heating member is used for adjusting the temperature of stoving incasement the heating member will under the temperature regulation to the second in the stoving incasement predetermines the condition of temperature, the stoving case can be used to dry the silicon material.

7. The processing device according to claim 6, wherein the drying box is provided with a second inlet and a second outlet for penetrating the transportation mechanism in sequence along the preset conveying path;

the drying box is also provided with a third gate for sealing the second inlet and a fourth gate for sealing the second outlet.

8. The processing apparatus of claim 1, wherein the transport mechanism comprises a drive member, a transfer member, and a carrier tray for placing the silicon material;

the driving part is connected with the conveying part, the conveying part is connected with the bearing disc, the driving part is used for driving the conveying part to move along the preset conveying path, and the movement of the conveying part drives the silicon material in the bearing disc to move along the preset conveying path.

9. The processing apparatus as claimed in claim 8, wherein the material of the carrier tray comprises: at least one of quartz, alumina, graphite, carbon-carbon, and silicon carbide.

10. The processing apparatus as claimed in claim 1, further comprising a transparent window, wherein a through hole is provided on a sidewall of the processing chamber;

the transparent window is embedded in the through hole.

11. The processing apparatus according to claim 1, wherein the halogen-containing gas comprises: at least one of chlorine, bromine gas, fluorine gas, carbon tetrachloride, hydrogen chloride and freon;

the reaction gas further includes an inert gas including: at least one of nitrogen, argon, helium.

12. The processing apparatus according to claim 1, wherein the first preset temperature is 700 ℃ -1300 ℃.

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