CN114212796A

CN114212796A - Silicon material processing device and silicon material processing method

Info

Publication number: CN114212796A
Application number: CN202111674694.3A
Authority: CN
Inventors: 邓浩; 韩伟; 董升; 李侨
Original assignee: Longi Green Energy Technology Co Ltd
Current assignee: Longi Green Energy Technology Co Ltd
Priority date: 2021-12-31
Filing date: 2021-12-31
Publication date: 2022-03-22
Anticipated expiration: 2041-12-31
Also published as: CN114212796B

Abstract

The embodiment of the invention provides a silicon material processing device and a silicon material processing method, wherein the silicon material processing device comprises: the device comprises a conveying mechanism for driving a silicon material to move along a preset conveying path, and a treatment cavity and a cleaning mechanism which are sequentially arranged along the preset conveying path, wherein a heating mechanism is arranged in the treatment cavity and used for adjusting the temperature in the treatment cavity, a gas inlet for inputting reaction gas is also arranged in the treatment cavity, and the reaction gas at least comprises halogen-containing gas; under the condition that the heating mechanism adjusts the temperature in the processing cavity to a first preset temperature, the gas inlet can introduce reaction gas into the processing cavity so as to enable halogen-containing gas in the reaction gas to react with metal impurities in the silicon material, and the cleaning mechanism is used for cleaning the reacted silicon material. In the embodiment of the invention, a large amount of chemical reagents can be avoided, the cost of silicon material treatment is saved, the environmental protection pressure is reduced, and the treatment device can treat silicon materials with different sizes.

Description

Silicon material processing device and silicon material processing method

Technical Field

The invention relates to the technical field of single crystal manufacturing, in particular to a silicon material processing device and a silicon material processing method.

Background

In recent years, photovoltaic power generation has been increasingly emphasized and vigorously developed by countries in the world as a green energy source and one of the main energy sources for human sustainable development. The monocrystalline silicon wafer is used as a basic material for photovoltaic power generation and has wide market demand. The single crystal silicon wafer is generally obtained by slicing a silicon rod, and the silicon rod is generally obtained by growing a silicon material.

In practical applications, the silicon material may be primary polysilicon or a redraw material, and in the prior art, in order to reduce the environmental protection pressure, before the silicon material is used to draw the silicon rod, the silicon material is usually cleaned with a reagent such as an acidic solution or an alkaline solution to remove impurities such as metals and metal compounds mixed in the silicon material.

However, when chemical reagents such as an acidic solution or an alkaline solution are used for cleaning the silicon material, the consumption of the chemical reagents such as the acidic solution or the alkaline solution is large, which easily causes high cleaning cost of the silicon material and large environmental protection pressure; moreover, the quality of the silicon rod produced from the cleaned silicon material still hardly meets the requirement of increasing the high quality (crystallization rate/conversion efficiency) of the silicon rod.

Disclosure of Invention

In view of the above problems, embodiments of the present invention have been made to provide a silicon material processing apparatus and a silicon material processing method that overcome or at least partially solve the above problems.

In order to solve the above problem, in a first aspect, an embodiment of the present invention discloses a silicon material processing apparatus, including: a conveying mechanism for driving the silicon material to move along a preset conveying path, and a processing cavity and a cleaning mechanism which are sequentially arranged along the preset conveying path, wherein,

the device comprises a processing cavity, a heating mechanism, a gas inlet and a gas outlet, wherein the processing cavity is internally provided with the heating mechanism, the heating mechanism is used for adjusting the temperature in the processing cavity, the processing cavity is also internally provided with the gas inlet used for inputting reaction gas, and the reaction gas at least comprises halogen-containing gas;

under the condition that the heating mechanism adjusts the temperature in the treatment cavity to a first preset temperature, the gas inlet can introduce the reaction gas into the treatment cavity so as to enable the halogen-containing gas in the reaction gas to react with the metal impurities in the silicon material, and the cleaning mechanism is used for cleaning the reacted silicon material.

Optionally, the treatment cavity is sequentially provided with a first inlet and a first outlet along the preset conveying path, wherein the first inlet and the first outlet are used for penetrating through the conveying mechanism;

the treatment chamber is further provided with a first gate for sealing the first inlet and a second gate for sealing the first outlet.

Optionally, the cleaning mechanism comprises at least two spraying mechanisms for spraying cleaning solution to the silicon material, and at least two cleaning tanks arranged corresponding to the spraying mechanisms;

the at least two spraying mechanisms are sequentially arranged along the preset conveying path, one cleaning groove is correspondingly arranged below the spraying mechanism, and the cleaning groove is used for recovering the corresponding cleaning liquid sprayed by the spraying mechanism to the silicon material.

Optionally, the cleaning solution includes: at least one of lactic acid, hydrofluoric acid, and nitric acid.

Optionally, the processing apparatus further includes a drying mechanism, and the drying mechanism is disposed on the preset conveying path;

the drying mechanism is connected to one side of the cleaning mechanism, which is far away from the processing cavity, and is used for drying the cleaned silicon material.

Optionally, the drying mechanism comprises: stoving case and heating member, the stoving case connect in wiper mechanism keeps away from one side of treatment chamber, the heating member is located the stoving incasement, the heating member is used for adjusting the temperature of stoving incasement the heating member will under the temperature regulation to the second in the stoving incasement predetermines the condition of temperature, the stoving case can be used to dry the silicon material.

Optionally, the drying box is sequentially provided with a second inlet and a second outlet along the preset conveying path, wherein the second inlet and the second outlet are used for penetrating through the conveying mechanism;

the drying box is also provided with a third gate for sealing the second inlet and a fourth gate for sealing the second outlet.

Optionally, the transportation mechanism comprises a driving member, a conveying member and a carrying tray for placing the silicon material;

the driving part is connected with the conveying part, the conveying part is connected with the bearing disc, the driving part is used for driving the conveying part to move along the preset conveying path, and the movement of the conveying part drives the silicon material in the bearing disc to move along the preset conveying path.

Optionally, the material of the carrier tray includes: at least one of quartz, alumina, graphite, carbon-carbon, and silicon carbide.

Optionally, the processing device further comprises a transparent window, and a through hole is formed in the side wall of the processing cavity;

the transparent window is embedded in the through hole.

Optionally, the halogen-containing gas comprises: at least one of chlorine, bromine gas, fluorine gas, carbon tetrachloride, hydrogen chloride and freon;

the reaction gas further includes an inert gas including: at least one of nitrogen, argon, helium.

Optionally, the first preset temperature is 700 ℃ to 1300 ℃.

In a second aspect, an embodiment of the present invention further discloses a method for processing a silicon material, including:

controlling a conveying mechanism to drive the silicon material to enter a treatment cavity along a preset conveying path;

adjusting the temperature in the treatment cavity to a first preset temperature by adopting a heating mechanism;

inputting a reaction gas at least comprising a halogen-containing gas into the processing cavity through a gas inlet so as to enable the halogen-containing gas to react with the metal impurities in the silicon material;

controlling the conveying mechanism to drive the silicon material to enter a cleaning mechanism;

and cleaning the reacted silicon material by using the cleaning mechanism.

Optionally, before the step of adjusting the temperature in the processing chamber to the first preset temperature by using the heating mechanism, the method includes:

and inputting an inert gas into the processing chamber through a gas inlet so as to replace the air in the processing chamber with the inert gas.

Optionally, the step of inputting a reaction gas at least comprising a halogen-containing gas into the processing chamber through the gas inlet so as to react the halogen-containing gas with the metal impurities in the silicon material comprises:

inputting the reaction gas at least comprising halogen-containing gas into the processing cavity through the gas inlet;

maintaining the temperature at the first preset temperature for 5-120 minutes to enable the halogen-containing gas to react with the metal impurities in the silicon material;

and inputting inert gas into the processing cavity through the gas inlet so as to cool the temperature in the processing cavity.

Optionally, after the step of cleaning the reacted silicon material by using the cleaning mechanism, the method further includes:

controlling the conveying mechanism to drive the silicon material to enter a drying mechanism;

and drying the cleaned silicon material by adopting the drying mechanism.

The embodiment of the invention has the following advantages:

in the embodiment of the invention, the conveying mechanism can drive the silicon material to move along the preset conveying path and sequentially pass through the processing cavity and the cleaning mechanism on the conveying path. Specifically, transport mechanism can drive silicon material is advanced to be gone into the treatment chamber, heating device can earlier with the temperature regulation in the treatment chamber is to first preset temperature, then can pass through the air inlet to the treatment chamber lets in reactant gas makes halogenous gas in the reactant gas can with metal impurity in the silicon material reacts, makes metal impurity with silicon material separation, in order to improve silicon material's purity. The conveying mechanism can also drive the silicon material to enter the cleaning mechanism, so that the cleaning mechanism can clean the reacted silicon material, further remove impurities in the silicon material, and obtain the silicon material with higher purity. In the embodiment of the invention, the metal impurities in the silicon material are removed by adopting the reaction gas, and then the impurities in the silicon material are further cleaned by using the cleaning liquid, so that a large amount of chemical reagents can be avoided, the treatment cost is saved, and the environmental protection pressure is reduced; moreover, metal impurities in the silicon material can be fully removed, so that the silicon material treated by the treatment device can be directly put into a furnace for use without special treatment or changing the waste preparation process conditions, and the quality of the produced silicon rod is high; the processing device in the embodiment of the invention can also process silicon materials with different sizes, and has better universality.

Drawings

FIG. 1 is a schematic structural diagram of an embodiment of a silicon material processing apparatus according to the present invention;

FIG. 2 is a flow chart of the steps of one embodiment of a method of processing a silicon material of the present invention;

FIG. 3 is a flow chart of steps in another embodiment of a method of processing a silicon mass according to the present invention.

Reference numerals:

1-a transportation mechanism, 11-a driving member, 12-a conveying member, 13-a bearing disc, 2-a processing chamber, 21-an air inlet, 22-an air outlet, 23-a first inlet, 24-a first outlet, 25-a first gate, 26-a second gate, 3-a cleaning mechanism, 31-a spraying mechanism, 32-a cleaning tank, 4-a heating mechanism, 5-a drying mechanism, 51-a drying box, 511-a second inlet, 512-a second outlet, 513-a third gate, 514-a fourth gate, 52-a heating member, 6-a transparent window and 7-a silicon material.

Detailed Description

In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below.

One of the core ideas of the embodiment of the invention is to disclose a silicon material processing device.

Referring to fig. 1, a schematic structural diagram of an embodiment of a silicon material processing apparatus of the present invention is shown, which may specifically include: the device comprises a conveying mechanism 1 for driving a silicon material 7 to move along a preset conveying path, and a processing chamber 2 and a cleaning mechanism 3 which are sequentially arranged along the preset conveying path, wherein a heating mechanism 4 is arranged in the processing chamber 2, the heating mechanism 4 is used for adjusting the temperature in the processing chamber 2, a gas inlet 21 for inputting reaction gas is also arranged in the processing chamber 2, and the reaction gas at least comprises halogen-containing gas; in the case that the heating mechanism 4 adjusts the temperature in the processing chamber 2 to the first preset temperature, the gas inlet 21 may introduce a reaction gas into the processing chamber 2 so as to react a halogen-containing gas in the reaction gas with metal impurities in the silicon material 7, and the cleaning mechanism 3 is configured to clean the reacted silicon material 7.

In the embodiment of the invention, the conveying mechanism 1 can drive the silicon material 7 to move along a preset conveying path and sequentially pass through the processing chamber 2 and the cleaning mechanism 3 on the conveying path. Specifically, the conveying mechanism 1 can drive the silicon material 7 to enter the processing chamber 2, the heating device can adjust the temperature in the processing chamber 2 to a first preset temperature, and then the reaction gas can be introduced into the processing chamber 2 through the gas inlet 21, so that the halogen-containing gas in the reaction gas can react with the metal impurities in the silicon material 7, the metal impurities and the silicon material 7 are separated, and the purity of the silicon material 7 is improved. The conveying mechanism 1 can also drive the silicon material 7 to enter the cleaning mechanism 3, so that the cleaning mechanism 3 can clean the reacted silicon material 7, further remove impurities in the silicon material 7, and obtain the silicon material 7 with higher purity. In the embodiment of the invention, the metal impurities in the silicon material 7 are removed by adopting the reaction gas, and then the impurities in the silicon material 7 are further cleaned by using the cleaning solution, so that a large amount of chemical reagents can be avoided, the cost for treating the silicon material 7 is saved, and the environmental protection pressure is reduced; moreover, metal impurities in the silicon material 7 can be fully removed, so that the silicon material 7 treated by the treatment device can be directly put into a furnace for use without special treatment or changing the waste manufacturing process conditions, and the produced silicon rod has high quality, high crystallization rate and high conversion efficiency; the processing device in the embodiment of the invention can also process silicon materials 7 with different sizes, and has better universality.

Specifically, after the silicon material 7 is reacted, metal compounds, organic impurities, inorganic impurities and the like are likely to remain on the surface of the silicon material 7, and the cleaning mechanism 3 can further remove the metal compounds, organic impurities, inorganic impurities and the like remaining on the surface of the silicon material 7, so that the silicon material 7 with high purity is obtained.

The silicon material 7 in the embodiment of the present invention may be a silicon material used for pull production of silicon rods, for example: silicon materials recovered in the process of producing silicon wafers or silicon rods and the like. The silicon material 7 in the embodiment of the present invention may be in the form of large lump materials, small-sized crushed materials, granular materials, or the like, so that the processing apparatus in the embodiment of the present invention can be adapted to a wide variety of silicon materials 7.

For example, the silicon material 7 may be a virgin granular polysilicon or a recycled redraw material, and the average grain size of the granular polysilicon may be 0.5 to 4 mm. The redraw material may include: the average particle size of the edge leather material can be 20-80mm, the average particle size of the slice thick sheet material can be 10-50 mm, and the average particle size of the broken small material can be 3-8 mm.

Specifically, the processing chamber 2 may be provided with a gas inlet 21, and the reaction gas may be input into the processing chamber 2 through the gas inlet 21, and in practical applications, the inert gas may be input into the processing chamber 2 through the gas inlet 21.

Specifically, the processing chamber 2 may further be provided with an air outlet 22, and air in the processing chamber 2 may be exhausted through the air outlet 22, so that the pressure and the gas composition in the processing chamber 2 may be adjusted. For example, an inert gas can be introduced into the process chamber 2 through the gas inlet 21 and the air in the process chamber 2 can be exhausted through the gas outlet 22, so that the inert gas can replace the air in the process chamber 2 and avoid the air from interfering with the reaction of the halogen-containing gas and the metal impurities in the silicon material 7.

In the embodiment of the invention, the conveying mechanism 1 can comprise a driving structure and a load-carrying structure, the driving structure can be connected with the load-carrying structure, and the load-carrying structure can be used for placing the silicon material 7, so that the driving structure drives the load-carrying structure to move, and the movement of the load-carrying structure can drive the silicon material 7 to move.

Further, the driving structure can drive the silicon material 7 on the load-bearing structure to move along a preset conveying path, so that the silicon material 7 can be continuously treated, the treatment of the large-batch silicon material 7 is facilitated, and the efficiency is high.

Specifically, the driving structure can drive the silicon material 7 on the load-carrying structure to move along a preset conveying path, and the processing chamber 2 and the cleaning mechanism 3 are sequentially arranged along the preset conveying path, so that the silicon material 7 can be sequentially processed by the processing chamber 2 and the cleaning mechanism 3. The preset transmission path may be set according to actual requirements, which is not specifically limited in this embodiment of the present invention.

Specifically, the drive structure can be motor or cylinder etc., the load structure can include conveying and be used for placing the silicon material bear the dish, the drive structure can pass through conveying drive bear the dish motion, conveying can be chain conveyor, roller conveyer or band conveyer etc. the material that bears the dish can include: at least one of quartz, alumina, graphite, carbon-carbon, and silicon carbide, which is not particularly limited in this embodiment of the present invention.

The processing chamber 2 in the embodiment of the present invention may be provided with a space for placing the heating mechanism 4 and the silicon material 7, so that the silicon material 7 may enter the processing chamber 2 for processing.

The heating mechanism 4 in the embodiment of the present invention is a device for adjusting the temperature in the processing chamber 2, for example, the heating mechanism 4 may be an electromagnetic heater, an infrared heater, or a resistance heater, and the embodiment of the present invention is not particularly limited thereto.

Specifically, in the case where the heating mechanism 4 heats the temperature inside the processing chamber 2 to the first preset temperature, the halogen-containing gas may react with the metal impurities in the silicon material 7 to generate a metal compound having a low boiling point, and at the first preset temperature, the metal compound may be carried away in a gaseous state by the gas flow. In practical application, the halogen-containing gas firstly reacts with the metal impurities on the surface layer of the silicon material 7, so that the concentration of the metal impurities on the surface layer of the silicon material 7 is reduced, and a concentration difference is formed between the metal impurities and the metal impurities inside the matrix of the silicon material 7, and at a preset temperature, the metal impurities can be continuously diffused from a high-concentration area to a low-concentration area, so that the metal impurities inside the matrix of the silicon material 7 can be absorbed to the surface layer of the silicon material 7 from the inside of the matrix of the silicon material 7, and react with the halogen-containing gas to generate volatile metal compounds, the metal impurities can be separated from the silicon material 7, and further the purity of the silicon material 7 can be improved.

Further, the reaction gas is introduced through the gas inlet 21 and then kept for 5-120 minutes, so that the halogen-containing gas can fully react with the metal impurities in the silicon material 7, and the metal impurities in the silicon material 7 can be more thoroughly removed.

Specifically, the metal impurities may include metals and metal compounds thereof. For example: calcium, aluminum, iron, magnesium, titanium, and the like, and their corresponding metal compounds.

Specifically, the conveying mechanism 1 can drive the silicon material 7 to enter the cleaning mechanism 3 from the processing chamber 2, and the cleaning mechanism 3 can clean the silicon material 7, so as to further remove residual impurities and the like in the silicon material 7 and further improve the purity of the silicon material 7.

Specifically, the reaction gas includes at least a halogen-containing gas, and the concentration of the halogen-containing gas may be set according to actual needs, which is not specifically limited in the examples of the present application.

Alternatively, the halogen-containing gas may comprise: at least one of chlorine, bromine gas, fluorine gas, carbon tetrachloride, hydrogen chloride and freon. In practical application, halogen-containing gases such as chlorine, bromine, fluorine, carbon tetrachloride, hydrogen chloride, freon and the like easily react with metal impurities in the silicon material 7 in a high-temperature environment, but react with silicon slowly, so that the loss of the silicon material 7 can be reduced.

In practical application, the reaction gas may further include an inert gas, and the inert gas does not react with the silicon material 7 in a high-temperature environment, so that the loss of the silicon material 7 can be reduced. The inert gas may include: at least one of nitrogen, argon, helium.

Specifically, the ratio of the halogen-containing gas to the inert gas may be any one of 1:999 to 999:1, and the concentration of the halogen-containing gas may be adjusted by adjusting the ratio between the halogen-containing gas and the inert gas, and may be adjusted according to the actual treatment amount of the silicon material 7, which is not particularly limited in the embodiment of the present invention.

Alternatively, the first preset temperature may be 700 ℃ to 1300 ℃. In practical application, under the condition that the first preset temperature is 700-1300 ℃, the halogen-containing gas can react with metal impurities in the silicon material 7 to generate a compound, and the compound is easy to volatilize under the environment of 700-1300 ℃, so that the compound is convenient to separate from the silicon material 7, and the purity of the silicon material 7 is improved.

In another embodiment of the invention, the treatment chamber 2 may be provided, in sequence, along a predetermined conveying path, with a first inlet 23 and a first outlet 24 for passing through the transport means 1; the treatment chamber 2 may also be provided with a first shutter 25 for sealing the first inlet 23 and a second shutter 26 for sealing the first outlet 24.

In the embodiment of the present invention, since the first inlet 23 and the first outlet 24 of the processing chamber 2 are sequentially arranged along the preset conveying path, the silicon material 7 can enter the processing chamber 2 from the first inlet 23 and leave the processing chamber 2 from the first outlet 24 in the process that the conveying mechanism 1 drives the silicon material to move along the preset conveying path. Under the condition that the conveying mechanism 1 drives the silicon material 7 to enter the treatment cavity 2, the first inlet 23 can be sealed by the first gate 25, and the first outlet 24 is sealed by the second gate 26, so that the treatment cavity 2 is sealed, heat dissipation in the treatment cavity 2 can be avoided, the reaction stability of the halogen-containing gas and the metal impurities in the silicon material 7 is improved, and the metal impurities in the silicon material 7 are sufficiently removed.

Specifically, a first gate 25 may be used to open or seal the first inlet 23 and a second gate 26 may be used to open or seal the first outlet 24. Specifically, the first gate 25 and the second gate 26 may be controlled electrically or manually, and the embodiment of the present invention is not particularly limited thereto.

In yet another alternative embodiment of the present invention, the cleaning mechanism 3 may include at least two spraying mechanisms 31 for spraying the cleaning solution to the silicon material 7, and at least two cleaning tanks 32 provided corresponding to the spraying mechanisms 31; at least two spraying mechanisms 31 can be sequentially arranged along a preset conveying path, one cleaning tank 32 can be correspondingly arranged below one spraying mechanism 31, and the cleaning tank 32 can be used for recovering cleaning liquid sprayed to the silicon material 7 by the corresponding spraying mechanism 31.

In the embodiment of the present invention, at least two spraying mechanisms 31 may sequentially spray the cleaning solution to the silicon material 7 entering the cleaning mechanism 3, so as to further remove impurities remaining on the surface of the silicon material 7, and further improve the purity of the silicon material 7. One cleaning tank 32 is correspondingly arranged below one spraying mechanism 31, and can recover the cleaning liquid sprayed to the silicon material 7 by the corresponding spraying mechanism 31, thereby avoiding environmental pollution and reducing environmental protection pressure.

Specifically, the conveying mechanism 1 can drive the silicon material 7 to sequentially pass through at least two spraying mechanisms 31, so that the silicon material 7 can be cleaned at least twice, and the cleaning is cleaner.

Specifically, the cleaning mechanism 3 may further include at least two liquid storage tanks for storing the cleaning liquid, the liquid outlet tank may be disposed corresponding to the spraying mechanism 31, the liquid storage tanks may be connected to the corresponding spraying mechanism 31 through pipelines, and the liquid storage tanks may provide the cleaning liquid to the corresponding spraying mechanism 31.

Optionally, the cleaning solution may include: at least one of lactic acid, hydrofluoric acid, and nitric acid. In practical application, when the cleaning solution is lactic acid, hydrofluoric acid or nitric acid, organic impurities and inorganic impurities attached to the surface of the silicon material 7 can be washed away.

Specifically, along the preset conveying path, a first spraying mechanism and a second spraying mechanism may be sequentially provided, the first spraying mechanism may spray lactic acid to the silicon material 7, and the second spraying mechanism may spray hydrofluoric acid to the silicon material 7.

In example 1, the metal impurities in the silicon material 7 are reacted with the halogen-containing gas, and then the silicon material 7 is cleaned with the acid cleaning solution such as lactic acid, hydrofluoric acid, and nitric acid to purify the silicon material 7.

In comparative example 1, the silicon material 7 was cleaned directly with the acid cleaning solution without using the halogen-containing gas to react with the gaseous impurities in the silicon material 7, as compared with example 1. As table 1, the amount of pickling solution used in example 1 and comparative example 1 is shown in comparison.

Specifically, taking the silicon material 7 as a redraw material as an example, the method may specifically include: the average particle size of the edge leather material can be 20-80mm, the average particle size of the slice thick sheet material can be 10-50 mm, and the average particle size of the broken small material can be 3-8 mm.

As can be seen from Table 1, for the same silicon material 7, the consumption of the pickling solution can be saved by using the halogen-containing gas to react with the metal in the silicon material 7 and then using the pickling solution to clean the silicon material 7 in the manner of the embodiment of the invention. In addition, when the silicon material 7 was cleaned in the manner of the embodiment of the present invention, the amount of the pickling solution consumed for the redraw material having a larger particle size was smaller.

Table 1:

in yet another optional embodiment of the present invention, the silicon material processing apparatus may further include a drying mechanism 5, and the drying mechanism 5 may be disposed on the preset conveying path; the drying mechanism 5 can be connected to one side of the cleaning mechanism 3 far away from the processing chamber 2, and the drying mechanism 5 is used for drying the cleaned silicon material 7.

In the embodiment of the present invention, the drying mechanism 5 may perform a drying process on the cleaned silicon material 7 to remove moisture on the surface of the silicon material 7.

Specifically, the treatment cavity 2, the cleaning mechanism 3 and the drying mechanism 5 can be sequentially arranged along a preset conveying path, and the conveying mechanism 1 can drive the silicon material 7 to sequentially pass through the treatment cavity 2, the cleaning mechanism 3 and the drying mechanism 5.

Specifically, the drying mechanism 5 may perform drying treatment on the silicon material 7 by using microwave, vacuum, hot air, or the like.

Alternatively, the drying mechanism 5 may include: drying box 51 and heating member 52, drying box 51 is connected in the one side that wiper mechanism 3 kept away from processing chamber 2, and heating member 52 is located drying box 51, and heating member 52 is used for adjusting the temperature in drying box 51, and under the condition that heating member 52 adjusted the temperature in drying box 51 to the second temperature of predetermineeing, drying box 51 can be used to dry silicon material 7.

In the embodiment of the present invention, the heating element 52 may adjust the temperature in the drying box 51 to a second preset temperature, so that the silicon material 7 may be dried in the drying box 51, and the silicon material 7 is dried in a heating manner, which is relatively simple and convenient.

Specifically, the second preset temperature may be set according to actual requirements, which is not specifically limited in the embodiment of the present invention.

Specifically, stoving mechanism 5 can also include thermal insulation cotton or thermal-insulated cotton, and thermal insulation cotton or thermal-insulated cotton can locate stoving case 51 in, and under the condition that silicon material 7 got into stoving case 51, thermal insulation cotton or thermal-insulated cotton can wrap up outside silicon material 7 to avoid being used for the heat loss of stoving silicon material 7, accelerate the stoving speed to silicon material 7.

Specifically, the drying mechanism 5 may further include an air pump, and the air pump may be disposed in the drying box 51 and used in cooperation with the heating element 52 to accelerate the drying speed of the silicon material 7.

Optionally, the drying box 51 is sequentially provided with a second inlet 511 and a second outlet 512 for penetrating the transportation mechanism 1 along a preset transportation path; the drying box 51 is further provided with a third shutter 513 for sealing the second inlet 511 and a fourth shutter 514 for sealing the second outlet 512.

In the embodiment of the present invention, since the second inlet 511 and the second outlet 512 of the drying box 51 are sequentially arranged along the preset conveying path, the silicon material 7 can enter the drying box 51 from the second inlet 511 and leave the drying box 51 from the second outlet 512 in the process that the conveying mechanism 1 drives the silicon material to move along the preset conveying path. Under the condition that the conveying mechanism 1 drives the silicon material 7 to enter the drying box 51, the third gate 513 can be used for sealing the second inlet 511, and the fourth gate 514 can be used for sealing the second outlet 512, so that the drying box 51 is sealed, heat dissipation in the drying box 51 can be avoided, and the drying efficiency of the drying box 51 on the silicon material 7 is improved.

Specifically, the third gate 513 is used to open or seal the second inlet 511, and the fourth gate 514 is used to open or seal the second outlet 512. Specifically, the third gate 513 and the fourth gate 514 may be controlled electrically or manually, and the embodiment of the present invention is not particularly limited in this respect.

Alternatively, the transportation mechanism 1 may comprise a driving member 11, a conveying member 12 and a carrier tray 13 for placing the silicon material 7; the driving member 11 may be connected to the conveying member 12, the conveying member 12 may be connected to the carrying tray 13, the driving member 11 may be configured to drive the conveying member 12 to move along a predetermined conveying path, and the movement of the conveying member 12 may drive the silicon material 7 in the carrying tray 13 to move along the predetermined conveying path.

In the embodiment of the invention, the conveying member 12 drives the silicon material 7 in the bearing disc 13 to move along the preset path, so that the silicon material 7 sequentially enters the processing chamber 2 and the cleaning mechanism 3 arranged along the preset conveying path for processing, and the silicon material 7 with higher purity can be obtained, thus being simpler and more convenient.

Specifically, the driving member 11 may be a motor, an air cylinder, or the like, and the conveying member 12 may be a chain conveyor, a roller conveyor, a belt conveyor, or the like, which is not particularly limited in the embodiment of the present invention.

Optionally, the material of the carrier tray 13 may include: at least one of quartz, alumina, graphite, carbon-carbon, and silicon carbide. In practical application, when the material of the carrier plate 13 is quartz, alumina, graphite, carbon or silicon carbide, the silicon material 7 can be prevented from reacting with the carrier plate 13 to generate new impurities in the drying process.

Optionally, the silicon material 7 processing device may further include a transparent window 6, and a through hole may be formed in the sidewall of the processing chamber 2; the transparent window 6 can be embedded in the through hole.

In the embodiment of the invention, the transparent window 6 is embedded on the side wall of the processing cavity 2, so that the condition in the processing cavity 2 can be observed through the transparent window 6, and the processing process of the silicon material 7 can be conveniently known.

In practical applications, a transparent window 6 may be correspondingly disposed on a side wall of the cleaning mechanism 3 to facilitate observation of the cleaning process of the silicon material 7.

In summary, the processing apparatus for silicon material according to the embodiment of the present invention at least includes the following advantages:

in the embodiment of the invention, the conveying mechanism can drive the silicon material to move along the preset conveying path and sequentially pass through the processing cavity and the cleaning mechanism on the conveying path. Specifically, transport mechanism can drive silicon material is advanced to be gone into the treatment chamber, heating device can earlier with the temperature regulation in the treatment chamber is to first preset temperature, then can pass through the air inlet to the treatment chamber lets in reactant gas makes halogenous gas in the reactant gas can with metal impurity in the silicon material reacts, makes metal impurity with silicon material separation, in order to improve silicon material's purity. The conveying mechanism can also drive the silicon material to enter the cleaning mechanism, so that the cleaning mechanism can clean the reacted silicon material, further remove impurities in the silicon material, and obtain the silicon material with higher purity. In the embodiment of the invention, the metal impurities in the silicon material are removed by adopting the reaction gas, and then the impurities in the silicon material are further cleaned by using the cleaning solution, so that a large amount of chemical reagents can be avoided, the cost for treating the silicon material is saved, and the environmental protection pressure is reduced; moreover, metal impurities in the silicon material can be fully removed, so that the silicon material treated by the treatment device can be directly put into a furnace for use without special treatment or changing the waste preparation process conditions, and the quality of the produced silicon rod is high; the processing device in the embodiment of the invention can also process silicon materials with different sizes, and has better universality.

Referring to fig. 2, a flow chart of steps of an embodiment of a method for processing a silicon material according to the present invention is shown, and specifically, the method may include the following steps:

step 201: and controlling the conveying mechanism to drive the silicon material to enter the treatment cavity along a preset conveying path.

In the embodiment of the invention, the conveying mechanism can be controlled to drive the silicon material to move along the preset conveying path and enter the processing cavity arranged on the preset conveying path.

Specifically, the conveying mechanism is used for driving the silicon material to move, the moving path of the conveying mechanism is the preset conveying path, and the preset conveying path can be set according to actual requirements. The processing chamber may be provided with a space for accommodating the silicon material. The size of the silicon material may be large blocks, small-sized crushed materials, granular materials, and the like, which is not specifically limited in this embodiment of the present invention.

Furthermore, the conveying mechanism can move along the preset path size, so that the silicon material can be continuously driven to move along the preset conveying path, the treatment of large batches of silicon materials is convenient to realize, and the efficiency is high.

In practical application, the first gate can be used to open the first inlet of the processing chamber, and then the transportation mechanism is controlled to drive the silicon material to enter the processing chamber.

Specifically, the transportation mechanism can comprise a driving structure and a load-carrying structure for placing the silicon material; the driving structure can be connected with the load-carrying structure, and the driving structure can be used for driving the load-carrying structure to move along the preset conveying path, so that the silicon material in the bearing disc can be driven to move along the preset conveying path.

In practical application, the silicon material can be firstly placed on the bearing disc, specifically, the silicon material can be manually loaded on the bearing disc, and then the driving piece is controlled to drive the conveying piece to move along the preset conveying path, so that the conveying piece can drive the silicon material on the bearing disc to enter the treatment cavity along the preset conveying path, and the treatment of a large batch of silicon material is facilitated.

Step 202: and adjusting the temperature in the treatment cavity to a first preset temperature by adopting a heating mechanism.

In an embodiment of the present invention, a heating mechanism may be adopted to adjust the temperature in the processing chamber to a first preset temperature, and specifically, the heating mechanism may be disposed in the processing chamber.

Specifically, between the temperature in the processing chamber being adjusted by the heating mechanism, the first gate may be used to seal the first inlet of the processing chamber, and the second gate may seal the first outlet of the processing chamber, so as to seal the processing chamber, thereby accelerating the speed at which the heating mechanism adjusts the temperature in the processing chamber to the first preset temperature.

Specifically, the first preset temperature may be 700 ℃ to 1300 ℃, so that the halogen-containing gas may react with the metal impurities in the silicon material to generate a compound, and the compound is easily volatilized in an environment of 700 ℃ to 1300 ℃, so as to be conveniently separated from the silicon material.

Step 203: and inputting a reaction gas at least comprising a halogen-containing gas into the processing cavity through the gas inlet so as to enable the halogen-containing gas to react with the impurities in the silicon material.

In an embodiment of the present invention, when the temperature in the processing chamber reaches the first preset temperature, a reaction gas including at least a halogen-containing gas may be input into the processing chamber through the gas inlet, so that the halogen-containing gas reacts with the metal impurities in the silicon material. Specifically, at the first preset temperature, the halogen-containing gas and the metal impurities in the silicon material can generate a compound, the compound has a lower boiling point at the first preset temperature and is easy to volatilize, so that the metal impurities can be separated from the silicon material, and the purity of the silicon material is improved.

Specifically, the halogen-containing gas may include: at least one of chlorine, bromine gas, fluorine gas, carbon tetrachloride, hydrogen chloride and freon.

Specifically, the reaction gas may further include an inert gas, and the inert gas does not react with the silicon material in a high-temperature environment, so that loss of the silicon material may be reduced. The inert gas may include: at least one of nitrogen, argon, helium. Further, the ratio of the halogen-containing gas to the inert gas may be any one of 1:999 to 999: 1.

Step 204: and controlling the conveying mechanism to drive the silicon material to enter the cleaning mechanism.

In the embodiment of the invention, the conveying mechanism can be controlled to drive the silicon material to enter the cleaning mechanism, specifically, the cleaning mechanism and the processing chamber can be sequentially arranged along the preset conveying path, and the conveying mechanism can drive the silicon material to enter the processing chamber firstly and then enter the cleaning mechanism.

In practical application, the second gate can be used to open the first outlet of the processing chamber, and then the transportation mechanism is controlled to drive the silicon material to move along the preset conveying path to enter the cleaning mechanism.

Step 205: and cleaning the reacted silicon material by using the cleaning mechanism.

In the embodiment of the invention, the cleaning mechanism can be used for cleaning the reacted silicon material, and specifically, the cleaning mechanism can further clean impurities remained on the surface of the silicon material, so that the purity of the silicon material is further improved.

Specifically, at least two spraying mechanisms may be adopted to spray the cleaning solution to the silicon material, and the at least two spraying mechanisms may be sequentially arranged along the preset conveying path. The cleaning solution may include: at least one of lactic acid, hydrofluoric acid, and nitric acid.

In summary, the method for processing a silicon material according to the embodiment of the present invention at least includes the following advantages:

in the embodiment of the invention, the conveying mechanism can drive the silicon material to move along the preset conveying path and sequentially pass through the processing cavity and the cleaning mechanism on the conveying path. Specifically, transport mechanism can drive silicon material is advanced to be gone into the treatment chamber, heating device can earlier with the temperature regulation in the treatment chamber is to first preset temperature, then can pass through the air inlet to the treatment chamber lets in reactant gas makes halogenous gas in the reactant gas can with metal impurity in the silicon material reacts, makes metal impurity with silicon material separation, in order to improve silicon material's purity. The conveying mechanism can also drive the silicon material to enter the cleaning mechanism, so that the cleaning mechanism can clean the reacted silicon material, further remove impurities in the silicon material, and obtain the silicon material with higher purity. In the embodiment of the invention, the metal impurities in the silicon material are removed by adopting the reaction gas, and then the impurities in the silicon material are further cleaned by using the cleaning solution, so that a large amount of chemical reagents can be avoided, the cost for treating the silicon material is saved, and the environmental protection pressure is reduced; moreover, metal impurities in the silicon material can be fully removed, so that the silicon material treated by the treatment method can be directly put into a furnace for use without special treatment or changing the waste preparation process conditions, and the quality of the produced silicon rod is high; the processing device in the embodiment of the invention can also process silicon materials with different sizes, and has better universality.

Referring to fig. 3, a flow chart of steps of another embodiment of the method for processing a silicon material of the present invention is shown, and specifically, the method may include the following steps:

step 301: and controlling the conveying mechanism to drive the silicon material to enter the treatment cavity along a preset conveying path.

Specifically, the specific implementation process of this step may be executed with reference to step 201, which is not described herein again.

Step 302: and inputting an inert gas into the processing chamber through a gas inlet so as to replace the air in the processing chamber with the inert gas.

In the embodiment of the invention, inert gas can be firstly input into the processing cavity through the gas inlet so as to replace air in the processing cavity with the inert gas, thereby avoiding air interference on processing of the silicon material.

Specifically, the process chamber may be first evacuated through the air outlet, and then the inert gas may be input into the process chamber through the air inlet, so as to replace the air in the process chamber with the inert gas.

Specifically, the first gate may be used to seal the first inlet of the process chamber and the second gate may be used to seal the first outlet of the process chamber prior to replacing the atmosphere within the process chamber with the inert gas.

Step 303: and adjusting the temperature in the treatment cavity to a first preset temperature by adopting a heating mechanism.

Specifically, the specific implementation process of this step may be executed with reference to step 202, which is not described herein again.

Step 304: and inputting the reaction gas at least comprising halogen-containing gas into the treatment cavity through the gas inlet.

In the embodiment of the present invention, the reaction gas at least including the halogen-containing gas may be input into the processing chamber through the gas inlet, and specifically, the input amount of the reaction gas may be adjusted according to actual requirements.

Step 305: and keeping the temperature at the first preset temperature for 5-120 minutes to enable the halogen-containing gas to react with the metal impurities in the silicon material.

Specifically, the temperature in the processing chamber can be maintained at the first preset temperature for 5-120 minutes, so that the halogen-containing gas can fully react with the metal impurities in the silicon material, and the purity of the obtained silicon material is high.

Specifically, in example 2, the granular polysilicon is purified by using the halogen-containing gas, and then the granular polysilicon is cleaned by using the acid washing solution, so as to achieve the purpose of purifying the granular polysilicon. The granular polysilicon of comparative example 2 was not purified with a halogen-containing gas and was not washed with an acid wash, as compared with example 2. The surface metal content is the metal impurity content on the surface of the silicon material, the body metal content is the metal impurity content in the silicon material matrix, the minority carrier lifetime of the first head after charging can reflect the quality of the silicon rod prepared by the silicon material waste, and the larger the minority carrier lifetime value of the first head after charging is, the better the quality of the corresponding silicon rod prepared by the silicon material waste is.

As can be seen from table 2, in the embodiment of the present invention, the halogen-containing gas is first used to react with the metal impurities in the granular polysilicon having an average particle size of 0.5 to 4 mm, and then the pickling solution is used to clean the granular polysilicon, so that the surface metal content and the bulk metal content of the granular polysilicon can be better removed, the minority carrier lifetime of the head of the first root after the granular polysilicon is charged can be further increased, and the quality of the silicon rod can be further improved by using the granular polysilicon to manufacture the silicon rod.

Table 2:

the edge skin material is a material with a roughly arched section cut from a cylindrical single crystal rod when a Czochralski single crystal rod is used for processing a square rod, and is crushed into a block structure with the average grain diameter of 20-80 mm. In example 3, the purpose of purifying the edge cover material was achieved by purifying the edge cover material with a halogen-containing gas and then washing the edge cover material with an acid wash. The offcut of comparative example 3 was not purified with a halogen-containing gas and was not washed with an acid wash, as compared with example 3.

As can be seen from Table 3, by adopting the manner in the embodiment of the invention, firstly the halogen-containing gas reacts with the metal in the scrap leather, and then the pickling solution is used for cleaning the scrap leather, the surface metal content and the bulk metal content of the scrap leather can be better removed, the minority carrier lifetime of the head of the first root after the scrap leather is fed into the furnace can be prolonged, and the quality of the silicon rod can be improved by adopting the scrap leather to scrap the silicon rod.

Table 3:

example 4 the purification of the sliced thick sheets was carried out by purifying the sliced thick sheets having an average particle diameter of 10 to 50 mm with a halogen-containing gas and then washing the sliced thick sheets with an acid washing solution. The sliced thick sheet in comparative example 4 was not purified with a halogen-containing gas and washed with an acid washing solution, as compared with example 4.

As can be seen from Table 4, by adopting the mode of the embodiment of the invention, firstly, the halogen-containing gas is used for reacting with the metal in the sliced thick sheet, and then the pickling solution is used for cleaning the sliced thick sheet, so that the surface metal content and the bulk metal content of the sliced thick sheet can be better removed, the head minority carrier lifetime of the first root after the furnace feeding of the sliced thick sheet can be prolonged, and the quality of the silicon rod can be improved by adopting the sliced thick sheet for pulling the silicon rod.

Table 4:

example 5 the purification of crushed small pieces having an average particle size of 3 to 8 mm was carried out by using a halogen-containing gas and then washing the crushed small pieces with an acid washing solution to purify the crushed small pieces. The crushed pellets in comparative example 5 were not purified with a halogen-containing gas and were not washed with an acid wash, as compared with example 5.

As can be seen from Table 5, by adopting the manner in the embodiment of the invention, firstly the halogen-containing gas reacts with the metal in the crushed small material, and then the pickling solution is used for cleaning the crushed small material, the surface metal content and the bulk metal content of the crushed small material can be better removed, the minority carrier lifetime of the head of the first root after the crushed small material is fed into the furnace can be prolonged, and the crushed small material is used for preparing the silicon rod, so that the quality of the silicon rod can be improved.

Table 5:

test data show that before the silicon rod is prepared by the waste, the silicon material is reacted with the halogen-containing gas by the method of the embodiment of the invention, and then the pickling solution is used for pickling, so that the minority carrier lifetime of the head of the crystal rod prepared by the waste can be prolonged. Moreover, the effect of the impurity removal treatment using the halogen-containing gas is different for silicon materials having different particle diameters.

For example: the silicon material can be divided into a primary first silicon material and a secondary silicon material which is reused according to the source. Wherein, the first silicon material can be a silicon material with the average grain diameter of 0.5-4 mm, the first silicon material can be granular polysilicon and the like, the first silicon material is fully reacted with the halogen-containing gas, and after acid cleaning by using acid cleaning solution, the surface metal content can be reduced to 5.1ppbwt, the bulk metal content can be reduced to 4.9ppbwt, and the minority carrier lifetime of the head can be prolonged to 745 mu s after the furnace feeding. The second silicon material can be a silicon material with the average grain diameter of 3-80 mm, and the second silicon material is a redraw material such as a leather material with the average grain diameter of 20-80mm, a slice thick sheet material with the average grain diameter of 10-50 mm, a broken small material with the average grain diameter of 3-8 mm, and the like. After the boundary material is fully reacted with the halogen-containing gas and acid-washed by using acid-washing liquid, the surface metal content can be reduced from 310.1ppbwt to 12ppbwt, the bulk metal content can be reduced to 11.5ppbwt, and the minority carrier lifetime of the head part of the first root can be prolonged to 679 mu s after the furnace is charged. After the sliced thick sheet is fully reacted with the halogen-containing gas and acid washed by using acid washing liquid, the surface metal content can be reduced from 659ppbwt to 16ppbwt, the bulk metal content can be reduced to 16.7ppbwt, and the minority carrier lifetime of the head part can be increased to 603 mu s after the furnace is put into operation. After the crushed small materials are fully reacted with the halogen-containing gas and acid washed by using acid washing liquid, the surface metal content can be reduced from 542ppbwt to 8.5ppbwt, the bulk metal content can be reduced to 6.9ppbwt, and the minority carrier lifetime of the head part of the initial root can be prolonged to 705 mu s after the furnace is put into the furnace.

The above test data show that the reusable silicon material (for example, the second silicon material) contains a large amount of surface metal impurities, and when the reusable silicon material is reacted with the halogen-containing gas and then washed with the acid wash, a large amount of surface metal impurities can be removed, and the effect of removing the surface metal impurities is extremely remarkable.

By adopting the silicon material treatment method in the embodiment of the invention, surface metal impurities and bulk metal impurities can be removed well, the minority carrier lifetime of the head of the first root after the silicon material is put into a furnace is prolonged, and the quality of a crystal bar can be improved after the silicon material is used for preparing a silicon bar.

Further, the method for processing the silicon material provided by the embodiment of the invention can be suitable for silicon materials with various sizes, and has good universality. Moreover, the treatment method in the embodiment of the invention has the advantages that the halogen-containing gas is used for removing the metal impurities in the silicon material, and the pickling solution is used for cleaning the silicon material, so that the silicon material is purified.

Step 306: and inputting inert gas into the processing cavity through the gas inlet so as to cool the temperature in the processing cavity.

Specifically, after the halogen-containing gas and the metal impurities in the silicon material have sufficiently reacted, an inert gas may be input to the process chamber through the gas inlet to cool the temperature of the process chamber. In particular, the temperature within the process chamber may be cooled to below 200 ℃.

Step 307: and controlling the conveying mechanism to drive the silicon material to enter the cleaning mechanism.

Specifically, the specific implementation process of this step may be executed with reference to step 204, which is not described herein again.

Step 308: and cleaning the reacted silicon material by using the cleaning mechanism.

Specifically, the specific implementation process of this step may be executed with reference to step 205, which is not described herein again.

Step 309: and controlling the conveying mechanism to drive the silicon material to enter a drying mechanism.

In the embodiment of the invention, the conveying mechanism can be controlled to drive the silicon material to enter the drying mechanism, specifically, the drying mechanism can be arranged on the preset conveying path, the processing chamber, the cleaning mechanism and the drying mechanism can be sequentially arranged along the preset conveying path, and the conveying mechanism can drive the silicon material to enter the cleaning mechanism first and then enter the drying mechanism.

In practical application, a third valve can be adopted to open the second inlet of the drying mechanism, and then the conveying mechanism is controlled to drive the silicon material to move along the preset conveying path to enter the drying mechanism.

Step 310: and drying the cleaned silicon material by adopting the drying mechanism.

In the embodiment of the invention, the cleaned silicon material can be dried by the drying mechanism, and specifically, the drying mechanism can dry the residual moisture on the surface of the silicon material.

In practical applications, before the drying mechanism starts to dry the cleaned silicon material, the third valve may be used to seal the second inlet of the drying mechanism, and the fourth valve may seal the second outlet of the drying mechanism.

It should be noted that, for simplicity of description, the method embodiments are described as a series of acts or combination of acts, but those skilled in the art will recognize that the present invention is not limited by the illustrated order of acts, as some steps may occur in other orders or concurrently in accordance with the embodiments of the present invention. Further, those skilled in the art will appreciate that the embodiments described in the specification are presently preferred and that no particular act is required to implement the invention.

As for the method embodiment, since it is basically similar to the apparatus embodiment, the description is simple, and the relevant points can be referred to the partial description of the method embodiment.

The embodiments in the present specification are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.

While preferred embodiments of the present invention have been described, additional variations and modifications of these embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the embodiments of the invention.

Finally, it should also be noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or terminal that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or terminal. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or terminal that comprises the element.

The above-mentioned detailed description is made on the silicon material processing apparatus and the silicon material processing method provided by the present invention, and the principle and the implementation of the present invention are explained by applying specific examples, and the description of the above-mentioned examples is only used to help understanding the method and the core idea of the present invention; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.

Claims

1. A silicon material processing apparatus, comprising: a conveying mechanism for driving the silicon material to move along a preset conveying path, and a processing cavity and a cleaning mechanism which are sequentially arranged along the preset conveying path, wherein,

2. The processing apparatus according to claim 1, wherein the processing chamber is provided with a first inlet and a first outlet for passing through the transport mechanism in sequence along the preset conveying path;

3. The processing apparatus according to claim 1, wherein the cleaning mechanism comprises at least two spraying mechanisms for spraying a cleaning solution to the silicon material, and at least two cleaning tanks provided corresponding to the spraying mechanisms;

4. A treatment device according to claim 3, wherein said cleaning liquid comprises: at least one of lactic acid, hydrofluoric acid, and nitric acid.

5. The processing apparatus according to claim 1, further comprising a drying mechanism provided on the preset conveying path;

6. The processing apparatus according to claim 5, wherein the drying mechanism comprises: stoving case and heating member, the stoving case connect in wiper mechanism keeps away from one side of treatment chamber, the heating member is located the stoving incasement, the heating member is used for adjusting the temperature of stoving incasement the heating member will under the temperature regulation to the second in the stoving incasement predetermines the condition of temperature, the stoving case can be used to dry the silicon material.

7. The processing device according to claim 6, wherein the drying box is provided with a second inlet and a second outlet for penetrating the transportation mechanism in sequence along the preset conveying path;

8. The processing apparatus of claim 1, wherein the transport mechanism comprises a drive member, a transfer member, and a carrier tray for placing the silicon material;

9. The processing apparatus as claimed in claim 8, wherein the material of the carrier tray comprises: at least one of quartz, alumina, graphite, carbon-carbon, and silicon carbide.

10. The processing apparatus as claimed in claim 1, further comprising a transparent window, wherein a through hole is provided on a sidewall of the processing chamber;

the transparent window is embedded in the through hole.

11. The processing apparatus according to claim 1, wherein the halogen-containing gas comprises: at least one of chlorine, bromine gas, fluorine gas, carbon tetrachloride, hydrogen chloride and freon;

12. The processing apparatus according to claim 1, wherein the first preset temperature is 700 ℃ -1300 ℃.

13. A method for processing a silicon material is characterized by comprising the following steps:

and cleaning the reacted silicon material by using the cleaning mechanism.

14. The method of processing according to claim 13, wherein the step of adjusting the temperature in the processing chamber to a first predetermined temperature using a heating mechanism is preceded by:

15. The method of processing according to claim 13, wherein the step of inputting a reaction gas comprising at least a halogen-containing gas into the processing chamber through a gas inlet to react the halogen-containing gas with the metal impurities in the silicon material comprises:

16. The method of processing as claimed in claim 13, wherein the step of cleaning the reacted silicon material with the cleaning mechanism is followed by further comprising:

and drying the cleaned silicon material by adopting the drying mechanism.