CN216956218U - Incoming material electrical property detection device of silicon-based OLED display screen - Google Patents

Abstract

The utility model discloses a device for detecting the electrical property of incoming materials of a silicon-based OLED display screen, which comprises: the vacuum chamber is a carrying platform arranged at the bottom of the vacuum chamber, the carrying platform is used for fixing a pixel anode to be detected, and the probe arranged in the vacuum chamber is used for electrically connecting the peripheral electrode and the pixel electrode; the electron gun and the secondary electron detector are arranged right above the anode pixel and are positioned in the vacuum chamber, the electron gun is used for emitting electrons which vertically shoot into the anode pixel, the secondary electron detector is used for receiving the returned electrons and outputting pixel voltage of each anode pixel point, and the pixel points with larger pixel voltage are bright point pixel points. According to the utility model, the wafer incoming material after the substrate is subjected to anode manufacturing is subjected to defect detection, and the bright spot defect can be repaired in advance, so that the interception rate can be increased, the yield can be improved, the cost loss can be reduced, and meanwhile, the reliability requirement of the OLED display screen can be better met.

Description

Incoming material electrical property detection device of silicon-based OLED display screen

Technical Field

The utility model belongs to the technical field of Micro OLED, and particularly relates to an incoming material electrical property detection device of a silicon-based OLED display screen.

Background

Silicon-based display is a new display industry that has emerged in recent years, and has the advantage of high PPI, which can reach over 3000, compared with conventional glass-based display, and silicon-based display is commonly used for near-eye display devices according to its advantages; the silicon-based display screen adopts a CMOS circuit to drive a pixel anode, the defects of the process of a bottom layer drive circuit can cause the defects of OLED display points and lines, the conventional silicon-based display wafer substrate is provided by a foundry, the foundry test can only test the functional abnormity of ICs, the defects of the display can not be detected, and the silicon-based display manufacturer is provided with higher yield loss risk.

At present, the defects of the points in the silicon-based display defect occupy a larger proportion, and the defects of the bright points are bright spots in a black picture. In order to reduce the reject ratio, in the industry, after the product is assembled on a PCB, the bright spot is repaired by adopting laser, a bright spot pixel is scanned by utilizing high-energy laser pulse, and an organic functional layer or a bottom layer driving circuit is gasified, so that the repair of the bright spot is realized, the control requirement on the laser energy is higher, too high energy generates a large amount of heat, the generated heat stress can cause the defect of a film layer, an OLED device has a high requirement on the compactness of an encapsulation layer, the encapsulation film layer of the OLED device is damaged to form a failure black spot, too low energy can cause part of the organic functional layer to remain, the current of the device is increased, and the bright spot pixel becomes brighter.

SUMMERY OF THE UTILITY MODEL

The utility model provides a device for detecting the electrical property of incoming materials of a silicon-based OLED display screen, aiming at solving the problems.

The utility model is realized in this way, a device for detecting the electrical property of incoming materials of a silicon-based OLED display screen, which is used for detecting the pixel anode, and comprises:

the vacuum chamber is a carrying platform arranged at the bottom of the vacuum chamber, and the carrying platform is used for fixing a pixel anode to be detected;

a probe arranged in the vacuum chamber and used for electrically connecting the peripheral electrode and the pixel electrode;

and the electron gun and the secondary electron detector are arranged right above the anode pixel and are positioned in the vacuum chamber.

Furthermore, the electron gun is used for emitting electrons which are vertical to the anode pixels, the secondary electron detector is used for receiving the returned electrons and outputting pixel voltage of each anode pixel point, and the pixel points with larger pixel voltage are the bright point pixel points.

Further, the apparatus further comprises:

and the laser aligns the laser head to the bright point pixel point and removes the bright point pixel point through laser.

According to the utility model, the wafer incoming material after the substrate is subjected to anode manufacturing is subjected to defect detection, and the bright spot defect can be repaired in advance, so that the interception rate can be increased, the yield can be improved, the cost loss can be reduced, and meanwhile, the reliability requirement of the OLED display screen can be better met.

Drawings

Fig. 1 is a schematic structural diagram of an incoming material electrical property detection device of a silicon-based OLED display screen according to an embodiment of the present invention;

fig. 2 is a schematic structural diagram of an incoming material lightening and removing device of a silicon-based OLED display screen according to an embodiment of the present invention;

1. the device comprises a silicon substrate, 2 parts of a pixel anode, 3 parts of an electron gun, 4 parts of a secondary electron detector, 5 parts of a peripheral electrode, 6 parts of a probe, 7 parts of a laser, 8 parts of a carrying platform and 9 parts of a vacuum chamber.

Detailed Description

The following detailed description of the embodiments of the present invention will be given with reference to the accompanying drawings for a more complete, accurate and thorough understanding of the inventive concept and technical solutions of the present invention by those skilled in the art.

Fig. 1 is a schematic structural diagram of an incoming material electrical property detection device of a silicon-based OLED display panel according to an embodiment of the present invention, and for convenience of description, only the portions related to the embodiment of the present invention are shown.

The incoming material electrical property detection device of the silicon-based OLED display screen is used for detecting bright spots of a pixel anode, the pixel anode refers to an anode after the pixel is deposited, the anode pixel refers to a pixel deposited on the anode, and the device comprises:

the vacuum chamber is a carrying platform arranged at the bottom of the vacuum chamber, and the carrying platform is used for fixing a pixel anode to be detected;

a probe arranged in the vacuum chamber and used for electrically connecting the peripheral electrode and the pixel electrode;

the electron gun and the secondary electron detector are arranged right above the anode pixel and are positioned in the vacuum chamber, the electron gun is used for emitting electrons which vertically shoot into the anode pixel, the secondary electron detector is used for receiving the returned electrons and outputting pixel voltage of each anode pixel point, and the pixel points with larger pixel voltage are bright point pixel points.

The peripheral electrode of the silicon-based OLED supplies power to the pixel electrode, an electric field is formed on the anode pixel, the electron gun sends electrons to be vertical to the anode pixel to be injected, the emitted electrons return under the action of the electric field and are received by the secondary electron detector, and then pixel voltage of each anode pixel point is output.

In an embodiment of the present invention, the apparatus further includes:

and the laser is used for positioning a laser head of the laser to a bright point position, the emitted laser removes an anode pixel corresponding to the bright point, as shown in fig. 2, an electric field cannot be formed, the time for reflecting electrons to the secondary electron detector is longer than that for reflecting electrons on a normal pixel, and the point becomes a dark point.

According to the utility model, the wafer incoming material after the substrate is subjected to anode manufacturing is subjected to defect detection, and the bright spot defect can be repaired in advance, so that the interception rate can be increased, the yield can be improved, the cost loss can be reduced, and meanwhile, the reliability requirement of the OLED display screen can be better met.

The utility model has been described by way of example, and it is obvious that the utility model is not limited to the embodiments described above, but it is within the scope of the utility model to employ various insubstantial modifications of the inventive concepts and techniques, or to apply them directly to other applications without such modifications.

Claims (3)

1. The utility model provides a supplied materials electrical property detection device of silicon-based OLED display screen for the detection of pixel positive pole, its characterized in that, the device includes:

the vacuum chamber is a carrying platform arranged at the bottom of the vacuum chamber, and the carrying platform is used for fixing a pixel anode to be detected;

the probe is arranged in the vacuum chamber and used for electrically connecting the peripheral electrode with the pixel electrode;

and the electron gun and the secondary electron detector are arranged right above the anode pixel and are positioned in the vacuum chamber.

2. The apparatus as claimed in claim 1, wherein the electron gun is adapted to emit electrons perpendicular to the anode pixels, the secondary electron detector is adapted to receive the returned electrons and output pixel voltages of the anode pixels, and the pixels with higher pixel voltages are bright pixels.

3. The apparatus for detecting electrical properties of incoming material for a silicon-based OLED display of claim 1 further comprising:

and the laser aligns the laser head to the bright point pixel point and removes the bright point pixel point through laser.

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