CN216919483U - Monocrystalline silicon growth furnace with double pulling auxiliary chambers - Google Patents
Monocrystalline silicon growth furnace with double pulling auxiliary chambers Download PDFInfo
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- CN216919483U CN216919483U CN202121407421.8U CN202121407421U CN216919483U CN 216919483 U CN216919483 U CN 216919483U CN 202121407421 U CN202121407421 U CN 202121407421U CN 216919483 U CN216919483 U CN 216919483U
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Abstract
The utility model provides a monocrystalline silicon growth furnace with double pulling auxiliary chambers, which comprises a monocrystalline furnace main body arranged at the upper end of a support, wherein an upright post is arranged beside the monocrystalline furnace main body, a first rotary lifting device and a second rotary lifting device are arranged on the side surface of the upper part of the upright post, the first rotary lifting device is connected with a crystal growth auxiliary chamber, and the second rotary lifting device is connected with a feeding auxiliary chamber; the top of the crystal growth auxiliary chamber is provided with a first lifting device, and the middle of the crystal growth auxiliary chamber is provided with a heating device; the top of the auxiliary charging chamber is provided with a second lifting device, and the second lifting device is connected with a charger. According to the monocrystalline silicon growth furnace with the double pulling auxiliary chambers, two means of synchronous cooling during crystal growth and preheating after ending of the grown crystal are adopted, the waiting time for crystal cooling is shortened, the double pulling auxiliary chambers are adopted to finish the growth and feeding work respectively, and no extra time is added for feeding preparation.
Description
Technical Field
The utility model relates to a monocrystalline silicon growth furnace, in particular to a monocrystalline silicon growth furnace with double pulling auxiliary chambers.
Background
In the growth process of monocrystalline silicon, in order to improve the efficiency, secondary charging is needed in the same crucible, and the secondary charging process of the traditional monocrystalline furnace is divided into a single-auxiliary-chamber built-in charging method and a furnace-chamber external charging method:
1. the single auxiliary chamber built-in feeding method is characterized in that the growth and the feeding are completed in sequence by adopting the same auxiliary chamber, and a certain cooling waiting time and a certain feeding preparation time are needed before the feeding is started after the growth is finished, so that the feeding method is stable and reliable, but the feeding is longer in whole time;
2. the external furnace chamber feeding method is characterized in that the whole feeding process is short, but the equipment is complex, the cost is high and the work is unstable.
SUMMERY OF THE UTILITY MODEL
The utility model aims to overcome the defects in the prior art, provides a monocrystalline silicon growth furnace with double pulling auxiliary chambers, and solves the problems of long time or high cost for feeding the whole body and unstable feeding of the conventional monocrystalline silicon growth furnace.
In order to solve the technical problems, the utility model provides the following technical scheme:
a monocrystalline silicon growth furnace with double pulling auxiliary chambers comprises a support, wherein a monocrystalline furnace main body is arranged at the upper end of the support, an upright post is arranged beside the monocrystalline furnace main body, a first rotary lifting device and a second rotary lifting device are arranged on the side surface of the upper part of the upright post, the first rotary lifting device is connected with a crystal growth auxiliary chamber, and the second rotary lifting device is connected with a feeding auxiliary chamber; the top of the crystal growth auxiliary chamber is provided with a first lifting device, and the middle of the crystal growth auxiliary chamber is provided with a heating device; the top of the auxiliary charging chamber is provided with a second lifting device, and the second lifting device is connected with a charger.
Furthermore, a crucible lifting device is arranged in the support, and a lifting rod of the crucible lifting device is inserted into the single crystal furnace main body and is fixedly connected with a crucible in the single crystal furnace main body.
Further, the heating device is one of a resistance heating device, an infrared heating device and an electromagnetic induction heating device.
Furthermore, a water cooling section is arranged at the lower part of the crystal growth auxiliary chamber, and the water cooling section is thickened and provided with a water cooling cavity.
Further, the lower end of the crystal growth auxiliary chamber is provided with a gate valve.
According to the monocrystalline silicon growth furnace with the double pulling auxiliary chambers, two means of synchronous cooling during crystal growth and preheating after ending of the grown crystal are adopted, the waiting time for crystal cooling is shortened, the double pulling auxiliary chambers are adopted to finish the growth and feeding work respectively, and no extra time is added for feeding preparation.
Drawings
The accompanying drawings, which are included to provide a further understanding of the utility model and are incorporated in and constitute a part of this specification, illustrate embodiments of the utility model and together with the description serve to explain the principles of the utility model and not to limit the utility model. In the drawings:
FIG. 1 is a schematic view of the structure of the present invention during crystal pulling operation;
FIG. 2 is a schematic diagram of the structure of the present invention during the ingot cooling and transferring operation;
FIG. 3 is a schematic view of the present invention in a charging operation.
Detailed Description
The preferred embodiments of the present invention will be described in conjunction with the accompanying drawings, and it will be understood that they are described herein for the purpose of illustration and explanation and not limitation.
As shown in fig. 1-3, a monocrystalline silicon growth furnace with double pulling auxiliary chambers comprises a bracket 1, a monocrystalline furnace main body 2 is arranged at the upper end of the bracket 1, an upright column 3 is arranged beside the monocrystalline furnace main body 2, a first rotary lifting device and a second rotary lifting device are arranged on the upper side surface of the upright column 3, the first rotary lifting device is connected with a crystal growth auxiliary chamber 4, and the second rotary lifting device is connected with a feeding auxiliary chamber 5; the top of the crystal growth auxiliary chamber 4 is provided with a first lifting device 6, and the middle part of the crystal growth auxiliary chamber 4 is provided with a heating device 7; and a second lifting device 8 is arranged at the top of the auxiliary charging chamber 5, and the second lifting device 8 is connected with a charger 9.
The lower part of the crystal growth auxiliary chamber 4 is provided with a water cooling section 10, and the water cooling section 10 is made in a thickening way and is provided with a water cooling cavity (the water cooling cavity is provided with a water inlet pipe and a water outlet pipe, which are not shown in the figure).
The lower end of the crystal growth auxiliary chamber 4 is provided with a gate valve 11.
The working principle is as follows:
the crystal growth auxiliary chamber is butted with the single crystal furnace main body to carry out crystal pulling work, and cooling water is introduced into the water cooling cavity to play a role in cooling in the crystal growth process; when crystal pulling is finished, the heating device is started to increase the temperature in the crystal growth auxiliary chamber, after the temperature reaches a specified temperature, the first lifting device lifts the crystal bar into the crystal growth auxiliary chamber, the gate valve is closed, the first rotary lifting device lifts the crystal growth auxiliary chamber and rotates the crystal bar to the outer side of the space of the main body of the single crystal furnace, and the crystal bar is cooled in the crystal growth auxiliary chamber until the crystal bar is taken away; the second rotary lifting device transfers the charging auxiliary chamber to the upper part of the single crystal furnace main body and descends to complete butt joint with the single crystal furnace main body, and the second lifting device controls the charger to descend to complete charging work.
Synchronous cooling and to growing brilliant accessory chamber preheat among the crystal growth process, guarantee that the crystal can not appear exploding the condition of splitting because of receiving great temperature gradient change, thereby realize the quick promotion after the crystal bar is finalized, cooling latency has been shortened, reinforced latency has also been shortened simultaneously, can let reinforced accessory chamber begin reinforced work earlier, furthermore, adopt extra reinforced accessory chamber to carry out reinforced work, can be at the crystal growth in-process reinforced preparation work of carrying out in step, reinforced preparation time does not occupy when whole usefulness, compare traditional single accessory chamber and not had grown but also reinforced, efficiency is showing and is improving.
A crucible lifting device 12 is arranged in the support 1, and a lifting rod of the crucible lifting device 12 is inserted into the single crystal furnace main body 2 and is fixedly connected with a crucible in the single crystal furnace main body 2. The crucible lifting device is matched with the first pulling device to control the relative position of the crucible and the crystal bar so as to complete crystal pulling work together.
The heating device 7 is one of a resistance heating device, an infrared heating device and an electromagnetic induction heating device, and can be selected according to actual needs.
According to the monocrystalline silicon growth furnace with the double pulling auxiliary chambers, two means of synchronous cooling during crystal growth and preheating after ending of the grown crystal are adopted, the waiting time for crystal cooling is shortened, the double pulling auxiliary chambers are adopted to finish the growth and feeding work respectively, and no extra time is added for feeding preparation.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments described above, or equivalents may be substituted for elements thereof. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (5)
1. A monocrystalline silicon growth furnace with double pulling auxiliary chambers is characterized in that: the single crystal furnace comprises a support, wherein a single crystal furnace main body is arranged at the upper end of the support, an upright post is arranged beside the single crystal furnace main body, a first rotary lifting device and a second rotary lifting device are arranged on the side surface of the upper part of the upright post, the first rotary lifting device is connected with a crystal growth auxiliary chamber, and the second rotary lifting device is connected with a feeding auxiliary chamber;
the top of the crystal growth auxiliary chamber is provided with a first lifting device, and the middle of the crystal growth auxiliary chamber is provided with a heating device;
the top of the auxiliary charging chamber is provided with a second lifting device, and the second lifting device is connected with a charger.
2. A single-crystal silicon growth furnace having double pull sub-chambers according to claim 1, characterized in that: a crucible lifting device is arranged in the support, and a lifting rod of the crucible lifting device is inserted into the single crystal furnace main body and is fixedly connected with a crucible in the single crystal furnace main body.
3. A single-crystal silicon growth furnace having double pull sub-chambers according to claim 1, characterized in that: the heating device is one of a resistance heating device, an infrared heating device and an electromagnetic induction heating device.
4. A single-crystal silicon growth furnace having double pull sub-chambers according to claim 1, characterized in that: and a water cooling section is arranged at the lower part of the crystal growth auxiliary chamber, and is thickened and provided with a water cooling cavity.
5. A single-crystal silicon growth furnace having double pull sub-chambers according to claim 1, characterized in that: and a gate valve is arranged at the lower end of the crystal growth auxiliary chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121407421.8U CN216919483U (en) | 2021-06-24 | 2021-06-24 | Monocrystalline silicon growth furnace with double pulling auxiliary chambers |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202121407421.8U CN216919483U (en) | 2021-06-24 | 2021-06-24 | Monocrystalline silicon growth furnace with double pulling auxiliary chambers |
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| CN216919483U true CN216919483U (en) | 2022-07-08 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116411351A (en) * | 2023-03-07 | 2023-07-11 | 襄阳鸿凯智能装备有限公司 | Silicon carbon material apparatus for producing |
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2021
- 2021-06-24 CN CN202121407421.8U patent/CN216919483U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116411351A (en) * | 2023-03-07 | 2023-07-11 | 襄阳鸿凯智能装备有限公司 | Silicon carbon material apparatus for producing |
| CN116411351B (en) * | 2023-03-07 | 2023-09-26 | 襄阳鸿凯智能装备有限公司 | Silicon carbon material apparatus for producing |
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