CN216904275U - Reverse connection and overvoltage prevention high-efficiency diode module - Google Patents
Reverse connection and overvoltage prevention high-efficiency diode module Download PDFInfo
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- CN216904275U CN216904275U CN202122641562.2U CN202122641562U CN216904275U CN 216904275 U CN216904275 U CN 216904275U CN 202122641562 U CN202122641562 U CN 202122641562U CN 216904275 U CN216904275 U CN 216904275U
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Abstract
The utility model relates to an anti-reverse connection and anti-overvoltage high-efficiency diode module, and belongs to the technical field of diodes. The control chip LTC4359, the inductor L1, the inductor L2, the TVS tube D1, the capacitor D2, the resistor D3, the resistor R1, the capacitor C1, the capacitor C2, the capacitor C3 and the MOS tube Q1. Inductors L1, L2 are used for filtering; the capacitors C1, C2 and C3 are used for voltage stabilization and filtering; TVS tubes D1, D2 and D3 are used for a voltage stabilizing protection circuit; the MOS tube Q1 is used for a conducted power device, and the control chip A1 is used for controlling the on-off of the MOS tube. Simple structure, the reliability is high. The utility model realizes the function of the diode and has the advantages of high reliability, small size, reverse connection prevention, overvoltage prevention and the like.
Description
Technical Field
The utility model belongs to the technical field of diodes, and particularly relates to an anti-reverse connection and anti-overvoltage diode module.
Background
The diode has the electronic characteristic of unidirectional conduction and is widely applied to the field of power electronics.
The diode has a tube voltage drop of between 0.3V and 0.7V, and the power dissipated by the diode is also large in high power applications. Resulting in reduced circuit efficiency, increased heat dissipation, and poor circuit reliability.
Because diodes have low efficiency and high heat dissipation in high power applications, there is a need for an ideal diode with low power dissipation, thereby reducing the heat dissipation of the circuit and increasing efficiency.
At present, in the existing patent, a double-NPN pair transistor scheme is adopted, and compared with a single-MOS transistor scheme provided by the utility model, the topology is more complex, the efficiency is lower, and modularization is not formed.
Disclosure of Invention
Technical problem to be solved
In order to overcome the defects of low conduction efficiency and high heat consumption of the conventional diode, the utility model provides an anti-reverse-connection and anti-overvoltage high-efficiency diode module.
Technical scheme
A high-efficiency diode module for preventing reverse connection and overvoltage is characterized by comprising a control chip A1, an inductor L1, an inductor L2, a voltage regulator tube D1, a voltage regulator tube D2, a voltage regulator tube D3, a resistor R1, a capacitor C1, a capacitor C2, a capacitor C3 and a MOS tube Q1; the model of the control chip A1 is LTC4359, a pin 1 of the control chip A1 is connected with a grid electrode of an MOS tube Q1, a voltage-stabilizing tube D3 is bridged between the pin 1 and the pin 2 of the control chip A1, the anode is connected with the pin 2, and the cathode is connected with the pin 1; a pin 2 of the control chip A1 is connected with the source electrode of the MOS tube Q1; the 4 feet of the control chip A1 are connected with the right end of an inductor L1, the left end of the inductor L1, the cathode of a voltage regulator tube D1 and the input of the circuit are connected together, one end of a capacitor C1 is connected with the input end, and the other end of the capacitor C1 is grounded; the anode of the voltage-regulator tube D1 is connected with the cathode of the voltage-regulator tube D2, the cathode of the voltage-regulator tube D2 is connected with one end of the resistor R1 and then grounded, and the other end of the resistor R1 is connected with the pin 6 of the control chip A1; the pin 8 of the control chip A1, the left end of the inductor L2 and the drain electrode of the MOS transistor Q1 are connected, the right end of the inductor L2, one end of the capacitor C3 and the output end are connected, and the other end of the capacitor C3 is grounded.
Preferably: the MOS tube Q1 is IRFS4310 ZPBF.
Preferably: the voltage-stabilizing tube is a TVS tube.
Advantageous effects
The utility model provides an anti-reverse connection and anti-overvoltage high-efficiency diode module which is composed of a control chip, a power MOS (metal oxide semiconductor) transistor, a resistance-capacitance device and a shell, and has the advantages of simple structure and high reliability. The diode has the advantages of high reliability, small size, reverse connection prevention, overvoltage prevention and the like while realizing the function of the diode.
The diode module provided by the utility model has the conduction resistance value of only about 5m omega, and greatly reduces the power consumption compared with the traditional diode. When 20A current is passed, the heat consumption of the conventional diode is about 14W; the ideal diode module provided by the utility model has the heat consumption of only 2W, reduces the heat consumption by 85%, greatly improves the circuit efficiency and reduces the heat dissipation requirement of the circuit.
Drawings
The drawings are only for purposes of illustrating particular embodiments and are not to be construed as limiting the utility model, wherein like reference numerals are used to designate like parts throughout.
FIG. 1 is a block diagram of an exemplary application provided by the present invention;
FIG. 2 is a schematic circuit diagram of a diode module according to the present invention;
fig. 3 is a top view of the diode module according to the present invention:
fig. 4 is a front view of the diode module according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail below with reference to the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely illustrative of the utility model and are not intended to limit the utility model. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The utility model adopts the following technical scheme:
the input of the ideal diode module is 5V-36V, the maximum current can reach 20A, the protection functions of reverse connection prevention and overvoltage prevention are achieved, the mass of the module is less than or equal to 15g, and the size of the module is 25.4mm multiplied by 12.7mm multiplied by 11.2 mm.
The isolation voltage between the input of the electronic switch control module and the shell is more than or equal to 500V.
The storage temperature of the electronic switch control module is-55-100 ℃, the working temperature is-45-85 ℃, and the continuous working time is more than or equal to 12 h.
The principle circuit of the diode module consists of a control chip LTC4359, inductors L1, L2, TVS tubes D1, D2 and D3, a resistor R1, capacitors C1, C2 and C3, and a MOS tube Q1. Inductors L1, L2 are used for filtering; the capacitors C1, C2 and C3 are used for voltage stabilization and filtering; TVS tubes D1, D2 and D3 are used for a voltage stabilizing protection circuit; the MOS tube Q1 is used for a conducted power device, and the control chip A1 is used for controlling the on-off of the MOS tube.
In the principle circuit of the diode module, a pin 1 of a control chip LTC4359 is connected with a grid electrode of an MOS transistor Q1, a voltage regulator tube D3 is bridged between the pin 1 and the pin 2 of the control chip LTC4359, the anode of the voltage regulator tube is connected with the pin 2, and the cathode of the voltage regulator tube is connected with the pin 1; a pin 2 of the control chip LTC4359 is connected with a source electrode of the MOS transistor Q1; the pin 4 of the control chip LTC4359 is connected with the right end of an inductor L1, the left end of the inductor L1, the cathode of a voltage regulator tube D1 and the input of a circuit are connected together, one end of a capacitor C1 is connected with the input end, and the other end of the capacitor C1 is grounded; the anode of the voltage regulator tube D1 is connected with the cathode of the voltage regulator tube D2, the cathode of the voltage regulator tube D2 is connected with one end of the resistor R1 and then is grounded, and the other end of the resistor R1 is connected with the pin 6 of the control chip LTC 4359; the pin 8 of the control chip LTC4359, the left end of the inductor L2 and the drain electrode of the MOS transistor Q1 are connected, the right end of the inductor L2, one end of the capacitor C3 and the output end are connected, and the other end of the capacitor C3 is grounded.
When voltage is input to the input end of an ideal diode module, the input voltage enters a pin 4 of a control chip LTC4359 to supply power to the chip after being filtered by C1 and L1, the input voltage is firstly conducted through a freewheeling diode of a MOS transistor Q1, and then a voltage signal enters the control chip through pins 4 and 8 of the LTC 4359. When the normal working condition is met, the pin 1 of the control chip LTC4359 outputs voltage to the grid electrode of the MOS tube, the MOS tube Q1 is conducted, the model number of the MOS tube Q1 is IRFS4310ZPBF, and the internal resistance R is conductedDS5.6m omega, low loss after conduction, high efficiency, and pulse when input voltage is appliedWhen the spike is punched, the voltage-stabilizing tubes D1 and D2 can absorb the spike, the control chip LTC4359 is not damaged, and the reliability of an ideal diode module is improved.
When the input voltage is reversely connected with the ground, the diode module has no output, and when the voltage reaches the breakdown voltage of the voltage regulator tube D2, the energy is consumed through the resistor R1, so that the circuit safety is protected, and reverse connection prevention protection is realized. The control chip LTC4359 can bear the voltage of 40V-100V without being damaged so as to realize overvoltage protection.
While the utility model has been described with reference to specific embodiments, the utility model is not limited thereto, and various equivalent modifications or substitutions can be easily made by those skilled in the art within the technical scope of the present disclosure.
Claims (3)
1. A high-efficiency diode module for preventing reverse connection and overvoltage is characterized by comprising a control chip A1, an inductor L1, an inductor L2, a voltage regulator tube D1, a voltage regulator tube D2, a voltage regulator tube D3, a resistor R1, a capacitor C1, a capacitor C2, a capacitor C3 and a MOS tube Q1; the model of the control chip A1 is LTC4359, a pin 1 of the control chip A1 is connected with a grid electrode of an MOS tube Q1, a voltage-stabilizing tube D3 is bridged between the pin 1 and the pin 2 of the control chip A1, the anode is connected with the pin 2, and the cathode is connected with the pin 1; a pin 2 of the control chip A1 is connected with the source electrode of the MOS tube Q1; the 4 feet of the control chip A1 are connected with the right end of an inductor L1, the left end of the inductor L1, the cathode of a voltage regulator tube D1 and the input of the circuit are connected together, one end of a capacitor C1 is connected with the input end, and the other end of the capacitor C1 is grounded; the anode of the voltage-regulator tube D1 is connected with the cathode of the voltage-regulator tube D2, the cathode of the voltage-regulator tube D2 is connected with one end of the resistor R1 and then grounded, and the other end of the resistor R1 is connected with the pin 6 of the control chip A1; the pin 8 of the control chip A1, the left end of the inductor L2 and the drain electrode of the MOS transistor Q1 are connected, the right end of the inductor L2, one end of the capacitor C3 and the output end are connected, and the other end of the capacitor C3 is grounded.
2. The diode module of claim 1, wherein the MOS transistor Q1 is of the type IRFS4310 ZPBF.
3. The diode module of claim 1, wherein the voltage regulator is a TVS transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122641562.2U CN216904275U (en) | 2021-10-30 | 2021-10-30 | Reverse connection and overvoltage prevention high-efficiency diode module |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122641562.2U CN216904275U (en) | 2021-10-30 | 2021-10-30 | Reverse connection and overvoltage prevention high-efficiency diode module |
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| CN216904275U true CN216904275U (en) | 2022-07-05 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116316521A (en) * | 2022-12-13 | 2023-06-23 | 中国科学院深海科学与工程研究所 | High-low voltage mutual backup type power distribution management system for deep sea equipment |
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2021
- 2021-10-30 CN CN202122641562.2U patent/CN216904275U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116316521A (en) * | 2022-12-13 | 2023-06-23 | 中国科学院深海科学与工程研究所 | High-low voltage mutual backup type power distribution management system for deep sea equipment |
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