CN216818271U - Gas distribution device for semiconductor processing equipment and flow guide piece thereof - Google Patents
Gas distribution device for semiconductor processing equipment and flow guide piece thereof Download PDFInfo
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- CN216818271U CN216818271U CN202123003406.XU CN202123003406U CN216818271U CN 216818271 U CN216818271 U CN 216818271U CN 202123003406 U CN202123003406 U CN 202123003406U CN 216818271 U CN216818271 U CN 216818271U
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Abstract
The gas distribution device comprises a gas source and a gas distribution pipeline connected with the gas source, the gas distribution pipeline comprises a main pipeline and an adjusting pipeline, the flow guide piece comprises a gas channel used for connecting the main pipeline and the adjusting pipeline, adjusting gas in the adjusting pipeline flows into the main pipeline from the gas channel, and the gas outlet direction of the gas channel is not perpendicular to the gas outlet direction of the main gas in the main pipeline. The utility model keeps the gas flow direction of the small-flow gas and the gas flow direction of the large-flow gas in the same direction when the gases converge, so that the large-flow gas pushes the small-flow gas to flow, the large-flow gas is prevented from blocking the small-flow gas, and the adjustment of the small-flow gas on the process is realized.
Description
Technical Field
The utility model relates to a gas distribution device for semiconductor processing equipment and a flow guide piece thereof.
Background
In a semiconductor processing apparatus, it is necessary to supply a reaction gas into a reaction chamber to process a substrate in the reaction chamber. Most of the reaction gas enters different areas of the reaction cavity through the main pipeline to realize the treatment of the substrate, and the rest of the reaction gas is distributed to the main pipeline through the regulating pipeline to regulate the gas flow in the main pipeline.
The gas flow in the main pipeline is relatively large, and the gas flow in the adjusting pipeline is relatively small, so when small-flow gas in the adjusting pipeline flows into the large-flow gas in the main pipeline, the large-flow gas can prevent the small-flow gas from flowing into the adjusting pipeline, the small-flow gas can form vortex at the flowing position, and the small-flow gas cannot be reserved, so that the fine adjustment process fails.
The statements herein merely provide background information related to the present disclosure and may not necessarily constitute prior art.
SUMMERY OF THE UTILITY MODEL
The utility model provides a gas distribution device for semiconductor processing equipment and a flow guide piece thereof, which can prevent large-flow gas from blocking small-flow gas during gas confluence and realize the adjustment of the small-flow gas to the process.
In order to achieve the above object, the present invention provides a flow guiding device disposed in a gas distribution pipeline of a semiconductor processing apparatus, the gas distribution pipeline includes a main pipeline and a regulating pipeline, the flow guiding device includes a gas channel for connecting the main pipeline and the regulating pipeline, the regulating gas in the regulating pipeline flows into the main pipeline from the gas channel, and an outlet direction of the gas channel is not perpendicular to an outlet direction of the main gas in the main pipeline.
The flow rate of the conditioning gas in the conditioning duct is less than the flow rate of the main gas in the main duct.
The included angle between the gas outlet direction of the gas channel and the gas outlet direction of the main gas in the main pipeline is alpha, and alpha is more than or equal to 0 degrees and less than 90 degrees.
The gas outlet direction of the gas channel is parallel to the gas outlet direction of the main gas in the main pipeline.
The gas channel comprises a gas inlet and a gas outlet, the gas inlet is positioned in the adjusting pipeline, and the gas outlet is positioned in the main pipeline.
The gas channel comprises a first gas channel arranged in the regulating pipeline and a second gas channel arranged in the main pipeline, a gas outlet of the first gas channel is communicated to the second gas channel, the second gas channel is provided with an inlet and an outlet, the main gas enters from the inlet of the second gas channel, the main gas is discharged from the outlet of the second gas channel, and the radius of the communication part of the second gas channel and the first gas channel is smaller than that of other parts of the second gas channel.
The radius of the first gas passage is smaller than the radius of the second gas passage.
The diameter of the inlet and the radius of the outlet of the secondary gas channel are both equal to the radius of the primary gas line.
The flow guide piece is provided with a connecting part, and the flow guide piece is fixed on the gas distribution pipeline through the connecting part.
The present invention also provides a gas distribution apparatus for providing process gas to a vacuum chamber in a semiconductor processing apparatus, the gas distribution apparatus comprising: the vacuum chamber comprises a gas source and a gas distribution pipeline connected with the gas source, wherein the gas distribution pipeline distributes gas in the gas source to the vacuum chamber;
the gas sources comprise at least one primary gas source and at least one secondary gas source;
the gas distribution pipeline comprises at least one main pipeline and at least one adjusting pipeline, wherein the gas inlet end of the main pipeline is connected to the main gas source, the gas outlet end of the main pipeline is communicated to the vacuum cavity, the gas inlet end of the adjusting pipeline is connected to the auxiliary gas source, and the gas outlet end of the adjusting pipeline is communicated to the corresponding main pipeline through the flow guide piece.
The gas distribution line further comprises: the gas inlet end of the gas distributor is connected with all the main gas sources, and the gas outlet end of the gas distributor is connected with all the main pipelines.
The gas distribution pipeline is provided with a plurality of preposed pipelines, the gas inlet end of each preposed pipeline is communicated to one main gas source, and the gas outlet end of each preposed pipeline is communicated to the gas inlet end of the gas distributor.
And the preposed pipeline is provided with a mass flow controller.
And air valves are respectively arranged at the air inlet end and the air outlet end of the mass flow controller.
And each adjusting pipeline is provided with a mass flow controller.
And air valves are respectively arranged at the air inlet end and the air outlet end of the mass flow controller.
The present invention also provides a semiconductor processing apparatus comprising: at least one vacuum chamber, said gas distribution means, and at least one gas evacuation means; the gas distribution device is used for providing processing gas for the vacuum cavity, and the gas pumping device is used for exhausting gas in the vacuum cavity.
The utility model keeps the gas flow direction of the small-flow gas and the gas flow direction of the large-flow gas in the same direction when the gases converge, so that the large-flow gas pushes the small-flow gas to flow, the large-flow gas is prevented from blocking the small-flow gas, and the adjustment of the small-flow gas on the process is realized.
Drawings
Fig. 1 is a schematic view of a gas distribution device provided in an embodiment of the present invention.
Fig. 2 is a structural sectional view of a guide member provided in one embodiment of the present invention.
Fig. 3 is a schematic structural view of a guide member provided in another embodiment of the present invention.
Fig. 4 is an installation sectional view of fig. 3.
Fig. 5 is a schematic structural view of a guide member provided in another embodiment of the present invention.
Fig. 6 is a cross-sectional view of fig. 5.
Detailed Description
The preferred embodiment of the present invention will be described in detail below with reference to fig. 1 to 6.
In one embodiment of the utility model, the semiconductor processing equipment comprises at least one vacuum cavity, wherein a base for placing a substrate is arranged in the vacuum cavity, reaction gas is supplied to the vacuum cavity through a gas distribution device so as to process the substrate, and the reacted gas in the vacuum cavity is exhausted through an exhaust device. And a plurality of gas inlets are distributed on the top wall and/or the side wall of the vacuum cavity, correspond to the middle area and the edge area of the vacuum cavity and are used for distributing the reaction gas from the gas distribution device to the middle area and the edge area of the vacuum cavity. Each vacuum chamber is generally independently provided with one air extractor, and for the semiconductor processing equipment with double reaction chambers, the two vacuum chambers share one air extractor. The gas distribution device comprises a gas source and a gas distribution pipeline connected with the gas source, wherein the gas distribution pipeline distributes gas in the gas source to the vacuum cavity. The gas source generally provides a plurality of gases, each of which may be individually delivered to the reaction chamber through a pipeline, and more generally, the gases are mixed and delivered to the reaction chamber, most of the reaction gases are distributed as a main gas source through a main pipeline in the gas distribution pipelines into different regions of the reaction chamber to process the substrate, and the rest of the reaction gases are distributed as an auxiliary gas source through a regulating pipeline in the gas distribution pipelines to the main pipeline to regulate the gas flow in the main pipeline. In one embodiment of the utility model, as shown in fig. 1, two main gas sources MG1 and MG2 are provided, each main gas source being connected to a gas distributor 101 via a pre-line 103, respectively, the pre-line 103 being provided with a mass flow controller MFC, the gas inlet and outlet ends of which are provided with gas valves FV and SV, respectively, and the gas distributor 101 distributing the main gas into two or more lines which are distributed to different regions of the reaction chamber via main lines 102, respectively. In this embodiment, four auxiliary gas sources TG 1-TG 4 are provided, and each auxiliary gas source is respectively delivered to each main pipeline 102 through a regulating pipeline 104 for fine-tuning the gas flow in the main pipeline 102. The adjusting pipeline 104 is also provided with a mass flow controller MFC, and an air inlet end and an air outlet end of the mass flow controller MFC are also respectively provided with an air valve FV and an air valve SV. The inlet end of the main pipeline 102 is connected to the main gas source, the outlet end of the main pipeline 102 is communicated to different inlets on the vacuum chamber, the inlet end of the adjusting pipeline 104 is connected to the auxiliary gas source, and the outlet end of the adjusting pipeline 104 is communicated to a corresponding main pipeline 102 through a flow guide. The gas flow in the main pipeline 102 is usually relatively large and can reach 50sccm to 1000sccm, and the gas in the adjusting pipeline 104 is used for fine adjustment, so the gas flow is usually relatively small and is generally only 1 sccm to 50 sccm.
As shown in fig. 2, in an embodiment of the present invention, the regulating pipeline 104 communicates with the main pipeline 102 through a flow guiding member 105, the flow guiding member 105 has a gas passage 106, and one end of the gas passage 106 communicates with the regulating pipeline 104 and the other end communicates with the main pipeline 102. The gas channel 106 includes a gas inlet located in the conditioning duct 104 and a gas outlet located in the main duct 102. Gas from an auxiliary gas source enters the gas channel 106 in the flow guide piece 105 through the adjusting pipeline 104, and enters the main pipeline 102 through the gas outlet of the gas channel 106, as can be seen from fig. 2, the gas outlet direction B of the gas channel 106 is not perpendicular to the gas outlet direction a in the main pipeline 102, and the included angle between the direction B and the direction a is an acute angle, that is, the gas outlet of the gas channel 106 is inclined towards the gas outlet direction in the main pipeline 102 relative to the gas inlet, that is, the inclined direction of the gas channel 106 makes the gas outlet of the gas channel 106 closer to the gas outlet end of the main pipeline 102 relative to the gas inlet. Therefore, the airflow direction of the small-flow gas from the self-regulating pipeline is in the same direction as the airflow direction in the main pipeline when entering the main pipeline, so that the dynamic pressure generated by the large-flow gas in the main pipeline and the dynamic pressure of the small-flow gas from the regulating pipeline are in the same direction, the large-flow gas in the main pipeline can push the small-flow gas from the self-regulating pipeline to flow to the gas outlet end of the main pipeline, the small-flow gas is prevented from being blocked by the large-flow gas, and the process regulation of the small-flow gas can be realized.
In another embodiment of the utility model, as shown in fig. 3 and 4, a flow guide 105 is arranged in the wall of the main pipeline 102 through a connecting part 109, the flow guide 105 has a gas passage 106, a gas inlet 107 of the gas passage 106 is positioned in the regulating pipeline 104, an outlet 108 of the gas passage 106 is positioned in the main pipeline 102, and gas from an auxiliary gas source enters the gas passage 106 in the flow guide 105 through the regulating pipeline 104 and enters the main pipeline 102 through a gas outlet 108 of the gas passage 106. As shown in fig. 3 and 4, the gas outlet 108 is disposed on the outer sidewall of the flow guiding element 105, in order to not block the gas outlet 108, the flow guiding element 105 is extended into the wall of the main pipeline 102, and the gas outlet 108 is completely exposed in the gas channel of the main pipeline 102, so that the gas outlet direction B of the gas channel 106 is parallel to the gas outlet direction a of the main pipeline 102, so that the gas flow direction of the small flow gas from the regulating pipeline when entering the main pipeline is completely parallel to the gas flow direction of the main pipeline, so that the dynamic pressure generated by the large flow gas in the main pipeline and the dynamic pressure of the small flow gas from the regulating pipeline are in the same direction, and the large flow gas in the main pipeline pushes the small flow gas from the regulating pipeline to flow to the gas outlet end of the main pipeline, thereby preventing the large flow gas from blocking the small flow gas, thereby enabling the regulation of the process by a small flow of gas.
In another embodiment of the present invention, as shown in fig. 5 and 6, a flow guide 105 is disposed in a wall of the main pipe 102 through a connection portion 109, and the flow guide 105 has a first gas passage 110 and a second gas passage 111 communicating with each other. The first gas channel 110 is arranged in the adjusting pipeline, the first gas channel 110 is provided with a first gas inlet 112 and a first gas outlet 113, the first gas inlet 112 is communicated with the adjusting pipeline, the gas in the adjusting pipeline enters the flow guide piece 105 through the first gas inlet 112, the first gas outlet 113 is communicated with the second gas channel 111, and the gas in the adjusting pipeline enters the second gas channel 111 through the first gas outlet 113. The second gas channel 111 is arranged in the main pipeline, the second gas channel 111 has a second gas inlet 114 and a second gas outlet 115, the gas from the main pipeline enters the flow guide 105 through the second gas inlet 114, and the gas from the regulating pipeline and the gas from the main pipeline are all discharged through the second gas outlet 115. In this embodiment, the radius of the second gas channel 111 gradually decreases from the second gas inlet 114 and the second gas outlet 115 toward the middle section, the first gas outlet 113 of the first gas channel 110 communicates to the narrowest radius of the second gas channel 111, when the gas enters the second gas channel from the second gas inlet 114 with larger caliber at the position with smaller radius in the middle of the second gas channel and expands to the second gas outlet 115 with larger caliber, the pressure at the place where the first gas passage 110 communicates with the second gas passage 111 is made lower than the pressure in the other part of the second gas passage 111, therefore, suction is generated on the gas in the first gas channel 110, the small-flow gas in the first gas channel 110 is driven to enter the second gas channel 111 and flow to the gas outlet end of the main pipeline, the small-flow gas is prevented from being blocked by the large-flow gas, and the adjustment of the small-flow gas on the process can be realized.
Further, in this embodiment, the second gas channel may be filled in the entire main pipeline, that is, the radii of the second gas inlet 114 and the second gas outlet 115 of the second gas channel 111 are both equal to the radius of the main pipeline, so that the second gas channel 111 and the main pipeline completely share one gas channel, the radius of the first gas channel 110 is smaller than the radius of the second gas channel 111, and the first gas channel 110 may also be arranged obliquely, that is, the first gas outlet 113 of the first gas channel 110 is inclined relative to the first gas inlet 112 toward the second gas outlet 115 of the second gas channel 111, so that an acute angle is formed between the gas outlet direction of the first gas channel 110 and the gas outlet direction of the second gas channel 111, and when a large flow of gas flows through the second gas channel 111, the pressure at the communication position of the first gas channel 110 and the second gas channel 111 is lower than that of the second gas channel 111 The pressure in the channel 111 generates suction to the gas in the first gas channel 110, drives the small-flow gas in the first gas channel 110 to enter the second gas channel 111, and flows to the gas outlet end of the main pipeline, so that the small-flow gas is prevented from being blocked by the large-flow gas, and the adjustment of the small-flow gas to the process can be realized.
The utility model keeps the gas flow direction of the small-flow gas and the gas flow direction of the large-flow gas in the same direction when the gases converge, so that the large-flow gas pushes the small-flow gas to flow, the large-flow gas is prevented from blocking the small-flow gas, and the adjustment of the small-flow gas on the process is realized.
It should be noted that, in the embodiments of the present invention, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship shown in the drawings, and are only for convenience of describing the embodiments, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the utility model. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the utility model should be determined from the following claims.
Claims (17)
1. The flow guide piece is arranged in a gas distribution pipeline in semiconductor processing equipment, and the gas distribution pipeline comprises a main pipeline and an adjusting pipeline.
2. Flow guide according to claim 1, characterised in that the flow of conditioning gas in the conditioning line is smaller than the flow of main gas in the main line.
3. Flow guide according to claim 2, wherein the angle between the outlet direction of the gas channel and the outlet direction of the main gas in the main line is α, 0 ° ≦ α <90 °.
4. Flow guide according to claim 3, wherein the gas outlet direction of the gas channel is parallel to the main gas outlet direction in the main line.
5. Flow guide according to claim 4, wherein the gas channel comprises a gas inlet and a gas outlet, the gas inlet being located in the regulating duct and the gas outlet being located in the main duct.
6. The flow guide of claim 4, wherein the gas passage comprises a first gas passage disposed in the regulating line and a second gas passage disposed in the main line, the gas outlet of the first gas passage communicates with the second gas passage, the second gas passage has an inlet and an outlet, the primary gas enters from the inlet of the second gas passage, the primary gas exits from the outlet of the second gas passage, and the radius where the second gas passage communicates with the first gas passage is smaller than the radius of other parts of the second gas passage.
7. The baffle of claim 6, wherein the radius of the first gas passage is less than the radius of the second gas passage.
8. Flow guide according to claim 6, wherein the radius of the inlet and the radius of the outlet of the secondary gas channel are both equal to the radius of the primary gas conduit.
9. The baffle of claim 1, wherein the baffle has a connection portion thereon, the baffle being secured to the gas distribution conduit by the connection portion.
10. A gas distribution apparatus for providing process gas to a vacuum chamber in a semiconductor processing apparatus, the gas distribution apparatus comprising: the vacuum chamber comprises a gas source and a gas distribution pipeline connected with the gas source, wherein the gas distribution pipeline distributes gas in the gas source to the vacuum chamber;
the gas sources comprise at least one primary gas source and at least one secondary gas source;
the gas distribution pipeline comprises at least one main pipeline and at least one regulating pipeline, wherein the gas inlet end of the main pipeline is connected to the main gas source, the gas outlet end of the main pipeline is communicated to the vacuum cavity, the gas inlet end of the regulating pipeline is connected to the auxiliary gas source, and the gas outlet end of the regulating pipeline is communicated to a corresponding main pipeline through the flow guide piece according to the claims 1-9.
11. The gas distribution apparatus of claim 10, wherein the gas distribution line further comprises: the gas inlet end of the gas distributor is connected with all the main gas sources, and the gas outlet end of the gas distributor is connected with all the main pipelines.
12. The gas distribution device of claim 11, wherein the gas distribution manifold has a plurality of pre-manifolds, each pre-manifold having an inlet end connected to one of the primary gas sources and an outlet end connected to the inlet end of the gas distributor.
13. The gas distribution device of claim 12, wherein a mass flow controller is disposed on the foreline.
14. The gas distribution device of claim 13, wherein the gas inlet and outlet ends of the mass flow controller are each provided with a gas valve.
15. The gas distribution device of claim 10, wherein a mass flow controller is disposed on each of the regulating lines.
16. The gas distribution device of claim 15, wherein the gas inlet and outlet ends of the mass flow controller are each provided with a gas valve.
17. A semiconductor processing apparatus, comprising: at least one vacuum chamber, a gas distribution device according to any of claims 10-16, and at least one gas evacuation device; the gas distribution device is used for providing processing gas for the vacuum cavity, and the gas pumping device is used for exhausting gas in the vacuum cavity.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123003406.XU CN216818271U (en) | 2021-12-02 | 2021-12-02 | Gas distribution device for semiconductor processing equipment and flow guide piece thereof |
| TW111210348U TWM641184U (en) | 2021-12-02 | 2022-09-23 | Gas distribution device for semiconductor processing equipment and diversion member thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202123003406.XU CN216818271U (en) | 2021-12-02 | 2021-12-02 | Gas distribution device for semiconductor processing equipment and flow guide piece thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216818271U true CN216818271U (en) | 2022-06-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202123003406.XU Active CN216818271U (en) | 2021-12-02 | 2021-12-02 | Gas distribution device for semiconductor processing equipment and flow guide piece thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN216818271U (en) |
| TW (1) | TWM641184U (en) |
-
2021
- 2021-12-02 CN CN202123003406.XU patent/CN216818271U/en active Active
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2022
- 2022-09-23 TW TW111210348U patent/TWM641184U/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TWM641184U (en) | 2023-05-21 |
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