CN216781432U - Chemical mechanical polishing device - Google Patents
Chemical mechanical polishing device Download PDFInfo
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- CN216781432U CN216781432U CN202120204418.XU CN202120204418U CN216781432U CN 216781432 U CN216781432 U CN 216781432U CN 202120204418 U CN202120204418 U CN 202120204418U CN 216781432 U CN216781432 U CN 216781432U
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- polishing
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- dust suction
- dust
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Abstract
The utility model discloses a chemical mechanical polishing device, include: a polishing table provided with a polishing pad for polishing a wafer; the grinding head is used for fixing the wafer and is matched with the grinding table to grind the wafer; a polishing liquid supply device, at least part of which is located on the same side of the polishing table as the polishing head, for supplying polishing liquid to the polishing pad; the chemical mechanical polishing device can improve the cleaning effect on by-products and particle debris on the surface of the polishing pad, reduce the defects on the wafer, improve the yield of the wafer and prolong the service life of the stone disc and the polishing pad.
Description
Technical Field
The utility model relates to the technical field of semiconductors, in particular to a chemical mechanical polishing device.
Background
In a Chemical Mechanical Polishing (CMP) process in the prior art, a slurry reacts with a wafer and is polished to generate byproducts and particle debris, which affect removal efficiency and defect performance (e.g., corrosion, damage, etc.), and a wafer polishing process in the related art uses a stone disc of a polishing adjustment arm to scrape a polishing pad back and forth to remove the particle debris, etc., but the scraping of the stone disc cannot effectively remove particles.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a chemical mechanical polishing device which can improve the effect of removing by-products and particle debris on the surface of a polishing pad, reduce defects caused to a wafer, improve the yield of the wafer and prolong the service life of a stone disc and the polishing pad.
According to the embodiment of the utility model, the chemical mechanical polishing device comprises: a polishing table provided with a polishing pad for polishing a wafer; the grinding head is used for fixing the wafer and is matched with the grinding table to grind the wafer; the polishing pad is provided with a polishing platform, a polishing pad is arranged on the polishing platform, and a polishing liquid supply device is arranged on the polishing platform and used for supplying polishing liquid to the polishing pad; and the dust suction device is connected with the grinding liquid supply device and is used for cleaning the surface of the grinding pad.
According to some embodiments of the present invention, the polishing liquid supply device includes a polishing slurry arm, the polishing slurry arm and the polishing head are located on the same side of the polishing table, and the dust suction device is formed on the polishing slurry arm.
Optionally, the dust suction device comprises a dust suction channel and a dust suction port communicated with the dust suction channel, the grinding fluid supply device is further provided with a slurry channel, the dust suction channel and the slurry channel are arranged in the mask slurry arm and isolated from each other, and the dust suction port is arranged on one side, facing the grinding table, of the grinding slurry arm.
Furthermore, dust extraction still includes dust absorption pump and dust arrester installation, the dust absorption pump with dust arrester installation all with dust absorption passageway links to each other in order to pass through dust absorption passageway inhales debris in the dust arrester installation.
Further, a spacing component is arranged in the grinding slurry arm and used for isolating the dust suction channel and the slurry channel in the grinding slurry arm.
Further, the dust suction port is formed in the bottom wall of the grinding pulp arm, the dust suction port comprises a plurality of dust suction holes, and the dust suction holes are distributed in the bottom wall of the grinding pulp arm in an array mode and correspond to the part of the dust suction channel.
Further, the slurry arm is provided with a slurry nozzle formed at an end portion of the slurry arm.
Further, the chemical mechanical polishing device further comprises a high-pressure cleaning device, the polishing slurry arm is provided with a high-pressure cleaning nozzle, and the high-pressure cleaning device is connected with the high-pressure cleaning nozzle to spray high-pressure cleaning liquid to the polishing pad.
Optionally, the slurry arm further comprises a baffle plate, the baffle plate is arranged on the slurry arm towards the grinding table, and the baffle plate is positioned between the high-pressure cleaning nozzle and the dust suction port.
Further, the baffle extends along a length of the slurry arm.
The chemical mechanical grinding device provided by the embodiment of the utility model comprises a grinding table, a dust suction device, a grinding pad and a grinding pad, wherein the dust suction device is arranged on one side of the grinding table and used for cleaning and sucking the surface of the grinding pad, by-products generated in the process of grinding a wafer, sundries such as residual slurry and debris particles and the like can be sucked away and removed through the dust suction device, and the grinding pad is provided with holes, residual grinding fluid, particle debris and the like can be hidden in the holes.
Drawings
FIG. 1 is a schematic view of a chemical mechanical polishing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a slurry arm of a CMP apparatus according to an embodiment of the utility model;
FIG. 3 is a schematic view of a dust suction port of a slurry arm of a CMP apparatus according to an embodiment of the present invention.
Reference numerals:
100: a chemical mechanical polishing apparatus;
1: a grinding table;
2: a grinding head;
3: an adjustment device;
4: slurry arm, 41: slurry passage, 42: dust collection passage, 43: baffle, 44: dust collection opening, 441: a dust collection hole.
Detailed Description
The chemical mechanical polishing apparatus 100 according to the present invention will be described in detail with reference to the accompanying drawings and the detailed description.
As shown in fig. 1 to 3, a chemical mechanical polishing apparatus 100 according to an embodiment of the present invention may include a polishing table 1, a polishing head 2, a polishing liquid supply device, and a dust suction device.
The grinding table 1 is provided with a grinding pad for grinding a wafer, the grinding head 2 is used for fixing the wafer and is matched with the grinding table 1 to grind the wafer, at least part of the grinding fluid supply device and the grinding head 2 are positioned at one side of the grinding table 1, for example, the grinding fluid supply device and the grinding head 2 can be arranged above the grinding table 1; the grinding fluid supply device is used for supplying grinding fluid to the grinding pad, and the dust suction device is connected to the grinding fluid supply device and used for cleaning the surface of the grinding pad.
Specifically, the polishing table 1 is used for bearing a wafer to be polished, the polishing pad is arranged on the polishing table 1, the polishing head 2 is located on one side of the polishing table 1 and used for adsorbing and fixing the wafer to be polished, the polishing head 2 is opposite to the polishing pad, the wafer to be polished is adsorbed on the lower surface of the polishing head 2, the polishing head 2 moves downwards to enable the wafer to be polished to press towards the polishing pad through the matching of the polishing head 2 and the polishing table 1, and the wafer to be polished is polished through the polishing pad. The polishing liquid supply device is provided with polishing liquid for conveying the polishing liquid to the polishing pad so as to provide the polishing liquid for polishing a wafer to be polished.
During the polishing process of the wafer to be polished, the slurry reacts with the wafer to polish, and generates some byproducts and debris particles, which not only affect the polishing efficiency of the wafer, but also cause defects in the wafer, such as scratching or corrosion of the wafer, and reduce the yield of the product.
Dust extraction establishes in the top of grinding table 1 and is used for wasing the dust absorption to the grinding pad surface, can be with the accessory substance that produces in the grinding pad surface wafer grinding process through dust extraction like this, debris such as residual thick liquid and piece granule siphon away gets rid of, and because the grinding pad has the hole, can hide remaining grinding fluid and granule piece etc. in the hole, compare the mode that adopts the scratch to get rid of grinding pad surface debris, also can get rid of debris and the remaining grinding fluid of hiding in the hole of grinding pad through dust extraction, not only can improve the dust absorption effect, and when supplying with new grinding fluid, also do benefit to new grinding fluid distribution's more even, also can reduce adjusting device's stone disc's use frequency and time simultaneously, the life of extension grinding pad and adjusting device 3's stone disc.
In some embodiments of the present invention, the slurry supply device may include a slurry arm 4, the slurry arm 4 and the polishing head 2 are disposed on the same side of the polishing table 1, for example, the slurry arm 4 and the polishing head 2 may be disposed above the polishing table 1, and the dust suction device is formed on the slurry arm 4. Specifically, the grinding slurry arm 4 extends to the upper side of the grinding pad, the grinding slurry supply device supplies the grinding slurry to the grinding pad through the grinding slurry arm 4, and the dust suction device can be formed on the grinding slurry arm 4, namely, the dust suction device can be integrally arranged on the grinding slurry arm 4, so that the separate dust suction device is not required to be arranged, the occupied space of the chemical mechanical grinding device 100 can be reduced, the chemical mechanical grinding device 100 is simple in structure, and the dust suction device is convenient to suck and remove impurities such as particle fragments generated on the surface of the grinding pad.
In some examples of the present invention, the dust suction device may include a dust suction passage 42 and a dust suction port 44 communicating with the dust suction passage 42, the slurry arm 4 is further provided with a slurry passage 41, and the dust suction passage 42 and the slurry passage 41 are both provided in the slurry arm 4 and isolated from each other, in other words, the dust suction passage 42 and the slurry passage 41 are integrally formed in the slurry arm 4 and spaced apart from each other, i.e., the dust suction passage 42 and the slurry passage 41 do not communicate with each other; the dust suction port 44 is opened on the side of the slurry arm 4 facing the polishing table 1, and for example, in the example shown in fig. 2, the dust suction port 44 may be provided on the bottom wall of the slurry arm 4 and correspond to the dust suction passage 42. In some specific examples of the present invention, a spacer member is provided in the slurry arm 4, and a slurry channel 41 and a dust suction channel 42 which are provided at intervals can be defined in the slurry arm 4 by the spacer member, wherein the slurry channel 41 can be used for circulation of the slurry, and the dust suction channel 42 can be used for sucking and removing particle impurities and the like on the surface of the polishing pad, and by spacing the slurry channel 41 and the dust suction channel 42, interference of dust suction and slurry delivery can be avoided, so that the internal structure of the slurry arm 4 can be more rationalized.
Alternatively, the spacer member may define the dust suction passage 42 and the slurry passage 41 extending in the longitudinal direction of the slurry arm 4 in the slurry arm 4, that is, the dust suction passage 42 and the slurry passage 41 in the slurry arm 4 may extend in the longitudinal direction of the slurry arm 4, which facilitates the conveying of the slurry to the polishing pad through the slurry passage 41 on the one hand, and the conveying of the foreign matters on the surface of the polishing pad through the dust suction passage 42 on the other hand, and the dust suction port 44 is provided on the bottom wall of the slurry arm 4 corresponding to the dust suction passage 42, which also increases the area of the dust suction port 44 to further improve the dust suction efficiency.
As shown in fig. 3, a dust suction port 44 is provided on a side wall of the side of the slurry arm 4 facing the polishing pad, for example, the dust suction port 44 may be formed on a bottom wall portion of the slurry arm 4 corresponding to the dust suction passage 42, and the dust suction port 44 communicates with the dust suction passage 42 and corresponds to the polishing pad, so that particulate debris, abrasive liquid and other foreign substances can enter the dust suction passage 42 through the dust suction port 44 to be removed.
As shown in fig. 3, the suction port 44 may include a plurality of suction holes 441, and a plurality of suction holes 441 are arrayed at a portion of the bottom wall of the slurry arm 4 corresponding to the suction passage 42. Therefore, the dust suction holes 441 are distributed more uniformly, the dust suction effect is more uniform, and the dust suction effect of the dust suction device on the surface of the grinding pad is facilitated. In the example shown in fig. 3, a plurality of suction holes 441 may be provided in a plurality of rows and columns and uniformly distributed on the bottom wall of the portion of the grinding arm 4 corresponding to the suction passage 42.
Further, the dust suction apparatus includes a dust suction pump and a dust collecting apparatus, both of which are connected to the dust suction passage 42 to suck the debris and the like into the dust suction apparatus through the dust suction passage 42, so that the dust suction pump is connected to the dust suction passage 42 to form a negative pressure at the dust suction port 44 to suck the debris and the like into the dust suction passage 42 and into the dust collecting apparatus, which can collect the debris such as the slurry containing the particles.
In some embodiments of the present invention, the slurry channel 41 may be connected to an abrasive liquid supply source for delivering the abrasive liquid, or the abrasive liquid supply device may further include an abrasive liquid supply pipe for delivering the abrasive liquid, the abrasive liquid supply pipe extending into the slurry channel 41, and the slurry channel 41 being configured to accommodate the abrasive liquid supply pipe. Alternatively, the polishing slurry arm 4 is provided with a slurry nozzle, and the slurry passage 41 may be communicated with the slurry nozzle to eject the polishing liquid to the polishing pad through the slurry nozzle or connected to the slurry nozzle through a polishing liquid supply pipe to eject the polishing liquid to the polishing pad. Further, a slurry nozzle may be formed at the end of the slurry arm 4, for example, a slurry nozzle may be formed at the end of the slurry arm 4 extending to the end of the polishing table 1, so that the slurry can be accurately dropped onto the polishing pad and the slurry distribution can be made more uniform by rotating the polishing table 1.
The chemical mechanical polishing device 100 may further include a high pressure cleaning device, the polishing slurry arm 4 is provided with a high pressure cleaning nozzle, the high pressure cleaning device is connected to the high pressure cleaning nozzle to spray high pressure cleaning liquid to the polishing pad, the high pressure cleaning nozzle is integrally disposed on the polishing slurry arm 4, the high pressure cleaning device may be used to wash the polishing liquid on the polished wafer and the by-products generated by polishing, the high pressure cleaning device may be used to supply deionized water, the deionized water is sprayed to the wafer through the high pressure cleaning nozzle to protect the wafer, especially when the metal is polished to fail, a large amount of the polishing liquid stays on the surface of the wafer, the deionized water is sprayed to the surface of the wafer to prevent the metal corrosion of the wafer, and the wafer is prevented from being scrapped.
Optionally, the slurry arm 4 further comprises a baffle 43, the baffle 43 is arranged on the side of the slurry arm 4 facing the grinding table 1, and the baffle 43 is positioned between the high pressure cleaning nozzle and the dust suction port 44, for example, the baffle 43 can be arranged at the bottom of the slurry arm 4 and positioned at the side edge of the dust suction port 44 to separate the high pressure cleaning nozzle from the dust suction port 44; further, the baffle 43 may extend along the length of the slurry arm 4. The high-pressure cleaning device can also comprise a high-pressure cleaning pipe, the high-pressure cleaning pipe can be arranged in the slurry pipeline, the high-pressure cleaning nozzle can be formed on the bottom wall of the grinding slurry arm 4 corresponding to the slurry channel 41, the baffle 43 is formed between the high-pressure cleaning nozzle and the dust suction port 44 to separate the high-pressure cleaning nozzle from the dust suction port 44, the slurry nozzle is arranged at the end part of the grinding slurry arm 4, the slurry nozzle and the dust suction port 44 can be separated through the baffle 43, therefore, the nozzle spraying liquid can be separated from the dust suction port 44 through the baffle 43, the liquid spraying and the dust suction of the dust suction port 44 can be carried out simultaneously, the spraying of grinding liquid and cleaning liquid is prevented from being influenced, and the dust suction function of the dust suction port 44 is also prevented from being influenced.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (8)
1. A chemical mechanical polishing apparatus, comprising:
a polishing table provided with a polishing pad for polishing a wafer;
the grinding head is used for fixing the wafer and is matched with the grinding table to grind the wafer;
a polishing liquid supply device, at least part of which is located on the same side of the polishing table as the polishing head, for supplying polishing liquid to the polishing pad, wherein the polishing liquid supply device comprises a polishing slurry arm located on the same side of the polishing table as the polishing head;
a dust suction device connected to the polishing liquid supply device, the dust suction device being used for cleaning the surface of the polishing pad, the dust suction device being formed on the polishing slurry arm;
and the high-pressure cleaning device is connected with the high-pressure cleaning nozzle so as to spray high-pressure cleaning liquid to the grinding pad.
2. The chemical mechanical polishing apparatus of claim 1, wherein the dust suction device comprises a dust suction channel and a dust suction port communicating with the dust suction channel, the slurry supply device further comprises a slurry channel, the dust suction channel and the slurry channel are both disposed in the polishing slurry arm and isolated from each other, and the dust suction port is opened on a side of the polishing slurry arm facing the polishing table.
3. The chemical mechanical polishing device of claim 2, wherein the dust extraction device further comprises a dust extraction pump and a dust collection device, both of which are connected to the dust extraction channel to draw debris through the dust extraction channel into the dust collection device.
4. The chemical mechanical polishing apparatus of claim 2, wherein a spacer member is provided in the slurry arm, the spacer member being configured to isolate the suction channel and the slurry channel in the slurry arm.
5. The chemical mechanical polishing apparatus according to claim 2, wherein the suction opening is formed in a bottom wall of the slurry arm, the suction opening includes a plurality of suction holes, and a plurality of the suction hole arrays are arranged in a portion of the bottom wall of the slurry arm corresponding to the suction passage.
6. The chemical mechanical polishing apparatus as recited in claim 2, wherein the polishing slurry arm is provided with a slurry nozzle formed at an end portion of the polishing slurry arm.
7. The chemical mechanical polishing apparatus of claim 2, wherein the slurry arm further comprises a baffle plate disposed on a side of the slurry arm facing the polishing platen, and the baffle plate is located between the high pressure cleaning nozzle and the dust suction port.
8. The chemical mechanical polishing apparatus of claim 7, wherein the baffle extends along a length of the slurry arm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120204418.XU CN216781432U (en) | 2021-01-25 | 2021-01-25 | Chemical mechanical polishing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120204418.XU CN216781432U (en) | 2021-01-25 | 2021-01-25 | Chemical mechanical polishing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216781432U true CN216781432U (en) | 2022-06-21 |
Family
ID=81999459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120204418.XU Active CN216781432U (en) | 2021-01-25 | 2021-01-25 | Chemical mechanical polishing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216781432U (en) |
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2021
- 2021-01-25 CN CN202120204418.XU patent/CN216781432U/en active Active
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