CN216738634U - 一种单晶炉用热场 - Google Patents
一种单晶炉用热场 Download PDFInfo
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- CN216738634U CN216738634U CN202122514136.2U CN202122514136U CN216738634U CN 216738634 U CN216738634 U CN 216738634U CN 202122514136 U CN202122514136 U CN 202122514136U CN 216738634 U CN216738634 U CN 216738634U
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- 239000013078 crystal Substances 0.000 title claims abstract description 63
- 238000004321 preservation Methods 0.000 claims abstract description 38
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- 238000004519 manufacturing process Methods 0.000 abstract description 11
- 238000013461 design Methods 0.000 abstract description 3
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 238000009413 insulation Methods 0.000 description 13
- 229910052760 oxygen Inorganic materials 0.000 description 9
- 239000001301 oxygen Substances 0.000 description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 7
- 230000017525 heat dissipation Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 description 3
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
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- 238000009434 installation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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CN202122514136.2U CN216738634U (zh) | 2021-10-19 | 2021-10-19 | 一种单晶炉用热场 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116479525A (zh) * | 2023-06-25 | 2023-07-25 | 苏州晨晖智能设备有限公司 | 一种单晶炉、单晶炉调整方法及生产低氧晶棒的方法 |
WO2024027316A1 (zh) * | 2022-08-05 | 2024-02-08 | 隆基绿能科技股份有限公司 | 一种环形支撑板、热场件和单晶炉用热场 |
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2021
- 2021-10-19 CN CN202122514136.2U patent/CN216738634U/zh active Active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024027316A1 (zh) * | 2022-08-05 | 2024-02-08 | 隆基绿能科技股份有限公司 | 一种环形支撑板、热场件和单晶炉用热场 |
CN116479525A (zh) * | 2023-06-25 | 2023-07-25 | 苏州晨晖智能设备有限公司 | 一种单晶炉、单晶炉调整方法及生产低氧晶棒的方法 |
CN116479525B (zh) * | 2023-06-25 | 2023-09-15 | 苏州晨晖智能设备有限公司 | 一种生产低氧晶棒的方法 |
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Address after: 675099 east side of South Gate of chufengyuan, sunshine Avenue, Lucheng Town, Chuxiong City, Chuxiong Yi Autonomous Prefecture, Yunnan Province Patentee after: Yunnan Yuze Semiconductor Co.,Ltd. Address before: 675099 east side of South Gate of chufengyuan, sunshine Avenue, Lucheng Town, Chuxiong City, Chuxiong Yi Autonomous Prefecture, Yunnan Province Patentee before: Yuze semiconductor (Yunnan) Co.,Ltd. |
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CP03 | Change of name, title or address |
Address after: No. 69 Waizhou Road, Yihai Community, Lucheng Town, Chuxiong City, Chuxiong Yi Autonomous Prefecture, Yunnan Province, 675000 Patentee after: Yunnan Yuze New Energy Co.,Ltd. Country or region after: China Address before: 675099 east side of South Gate of chufengyuan, sunshine Avenue, Lucheng Town, Chuxiong City, Chuxiong Yi Autonomous Prefecture, Yunnan Province Patentee before: Yunnan Yuze Semiconductor Co.,Ltd. Country or region before: China |