CN216698390U - MWT-HJT battery structure - Google Patents
MWT-HJT battery structure Download PDFInfo
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- CN216698390U CN216698390U CN202120864511.3U CN202120864511U CN216698390U CN 216698390 U CN216698390 U CN 216698390U CN 202120864511 U CN202120864511 U CN 202120864511U CN 216698390 U CN216698390 U CN 216698390U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The utility model discloses an MWT-HJT battery structure, which comprises a front TCO layer, a front amorphous silicon layer, a front intrinsic amorphous silicon layer, a monocrystalline silicon substrate, a back intrinsic amorphous silicon layer, a back amorphous silicon layer and a back aluminum film which are sequentially arranged from top to bottom.
Description
Technical Field
The utility model relates to an MWT-HJT battery structure, and belongs to the technical field of solar battery production.
Background
The MWT battery technology is a back contact technology, compared with an IBC structure, the technology is simple and low in cost, the MWT battery technology is combined with the HJT battery technology, on one hand, the advantages of the HJT battery can be exerted, on the other hand, the technical characteristics of the MWT battery and the unique back contact component packaging mode of the MWT battery can be perfectly combined with the HJT battery and can further exert the sheet advantages of the MWT battery, and the cost of the MWT-HJT battery component product can be greatly reduced through the innovative design of the battery back surface structure and the innovative design of the back surface component packaging technology.
SUMMERY OF THE UTILITY MODEL
The utility model combines the MWT and the HJT battery technologies, fully exerts the packaging advantage of the full back component of the MWT battery, develops a brand new structural design and preparation process, simplifies the process, reduces the silver paste consumption of the battery, greatly reduces the cost and is beneficial to the industrialization of the HJT battery.
The utility model relates to a preparation method of an MWT-HJT battery, which comprises the following steps:
s01, laser drilling is carried out on the silicon chip;
s02, texturing and cleaning the monocrystalline silicon substrate, removing a mechanical damage layer and pollutants on the surface of the silicon substrate, and forming a pyramid textured surface;
s03, depositing intrinsic amorphous silicon layers on two sides;
s04, carrying out amorphous silicon deposition on the front surface;
s05, amorphous silicon deposition is carried out on the back;
s06, TCO deposition is carried out on the front surface;
s07, depositing an aluminum film on the back;
s08, printing etching slurry on the back around the hole position to perform local etching of the aluminum film;
s09, printing the hole plugging slurry into the holes drilled by the silicon wafer laser from the back;
s10, screen printing front conductive silver paste;
and S11, packaging the assembly.
Further, in the step S01, the silicon wafer is an N-type or P-type silicon wafer.
Further, the amorphous silicon in step S04 is an N-type amorphous silicon or a P-type amorphous silicon.
As a preferred embodiment of the present application, when the step S04 employs P-type amorphous silicon deposition, the step S05 is N-type amorphous silicon deposition on the back side;
when the step S04 employs N-type amorphous silicon deposition, the step S05 is P-type amorphous silicon deposition on the back side.
Based on the preparation method, the application also provides an MWT-HJT battery structure, which comprises a front TCO layer, a front amorphous silicon layer, a front intrinsic amorphous silicon layer, a monocrystalline silicon substrate, a back intrinsic amorphous silicon layer, a back amorphous silicon layer and a back aluminum film which are sequentially arranged from top to bottom.
Further, the front amorphous silicon layer is an N-type amorphous silicon layer or a P-type amorphous silicon layer.
Further, if a P-type amorphous silicon layer is adopted, the back amorphous silicon layer is an N-type amorphous silicon deposition layer; if the front surface adopts the N-type amorphous silicon layer, the back amorphous silicon layer is a P-type amorphous silicon deposition layer.
As a preferred embodiment of the present application, the front electrode of the battery structure is a silk-screen low-temperature silver paste, and the front electrode is gathered and penetrated to the back surface through holes prepared on a silicon wafer before texturing; the back electrode is an aluminum film, and the anode and the cathode on the back are insulated and isolated.
The application also provides a preparation method of the battery component, the battery component adopts the MWT-HJT battery structure, and the preparation method comprises the following steps:
s101, sequentially laying a back plate, a first back conductive foil, a back conductive adhesive, a back isolating film, a second back conductive foil, a back conductive adhesive dot matrix, an MWT-HJT battery piece, a front packaging adhesive film and glass;
s102, entering an assembly laminating machine for assembly packaging.
Further, the first back conductive foil and the second back conductive foil are the same or different in composition and are copper foil, aluminum foil or a composite foil of the copper foil and the aluminum foil.
Compared with the traditional MWT battery, the MWT-HJT battery structure and the process preparation method provided by the utility model have the following beneficial effects:
1. the high efficiency, low attenuation and low temperature coefficient of the HJT battery are provided, and the comprehensive generating capacity is improved;
2. MWT and HJT both have the advantages of flaking, can be compatible with a silicon wafer with the thickness of 100 microns, and further reduce the cost;
3. compared with the HJT battery, the back TCO and the low-temperature silver paste are less in metallization, and the cost is lower.
Drawings
In order to more clearly illustrate the technical solution of the present invention, the drawings needed to be used in the present invention will be briefly described below, and it is apparent that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without inventive labor.
FIG. 1 is a schematic view of a MWT-HJT cell structure according to the present invention;
in the figure, 1-front electrode, 2-TCO layer, 3-front N-type amorphous silicon layer, 4-front P-type amorphous silicon layer, 5-silicon chip, 6-back N-type amorphous silicon layer, 7-back P-type amorphous silicon layer, 8-back aluminum film, 9-hole plugging slurry and 10-insulating region.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
the utility model relates to a preparation method of an MWT-HJT battery, which comprises the following steps:
s01, laser drilling is carried out on the silicon wafer, wherein the silicon wafer substrate comprises an N type or a P type;
s02, texturing and cleaning the monocrystalline silicon substrate, removing a mechanical damage layer and pollutants on the surface of the silicon substrate, and forming a pyramid textured surface;
s03, depositing intrinsic amorphous silicon layers on two sides;
s04, carrying out amorphous silicon deposition on the front surface;
s05, amorphous silicon deposition is carried out on the back surface;
s06, TCO deposition is carried out on the front surface;
s07, depositing an aluminum film on the back;
s08, printing etching slurry on the back around the hole position to perform local etching of the aluminum film;
s09, printing the hole plugging slurry into the holes drilled on the silicon wafer by laser from the back;
s10, screen printing front conductive silver paste;
and S11, packaging the assembly.
Further, in the step S01, the silicon wafer is an N-type or P-type silicon wafer.
Further, the amorphous silicon in step S04 is an N-type amorphous silicon or a P-type amorphous silicon.
As a preferred embodiment of the present application, when the step S04 employs P-type amorphous silicon deposition, the step S05 is N-type amorphous silicon deposition on the back side;
when the step S04 employs N-type amorphous silicon deposition, the step S05 is P-type amorphous silicon deposition on the back side.
The method develops a brand new structural design and preparation process, simplifies the process, reduces the silver paste consumption of the battery, greatly reduces the cost, and is beneficial to the industrialization of the HJT battery.
Example 2
Based on the above preparation method, this embodiment provides an MWT-HJT cell structure, as shown in fig. 1, the structure includes, from top to bottom, a front TCO layer, a front amorphous silicon layer, a front intrinsic amorphous silicon layer, a monocrystalline silicon substrate, a back intrinsic amorphous silicon layer, a back amorphous silicon layer, and a back aluminum thin film.
Further, the front amorphous silicon layer is an N-type amorphous silicon layer or a P-type amorphous silicon layer.
Further, if a P-type amorphous silicon layer is adopted, the back amorphous silicon layer is an N-type amorphous silicon deposition layer; if the front surface adopts the N-type amorphous silicon layer, the back amorphous silicon layer is a P-type amorphous silicon deposition layer.
As a preferred embodiment of the present application, the front electrode of the battery structure is a silk-screen low-temperature silver paste, and the front electrode is gathered and penetrated to the back surface through holes prepared on a silicon wafer before texturing; the back electrode is an aluminum film, and the anode and the cathode on the back are insulated and isolated.
Compared with the HJT battery, the MWT-HJT battery structure provided by the utility model has the following beneficial effects:
1. the high efficiency, low attenuation and low temperature coefficient of the HJT battery are provided, and the comprehensive generating capacity is improved;
2. MWT and HJT both have the advantages of flaking, can be compatible with a silicon wafer with the thickness of 100 microns, and further reduce the cost;
3. compared with the HJT battery, the back TCO and the low-temperature silver paste are less in metallization, and the cost is lower.
Example 3
This embodiment also provides a method for manufacturing a battery assembly, where the battery assembly adopts the MWT-HJT battery structure, and the method includes the following steps:
s101, sequentially laying a back plate, a first back conductive foil, a back conductive adhesive, a back isolating film, a second back conductive foil, a back conductive adhesive dot matrix, an MWT-HJT battery piece, a front packaging adhesive film and glass;
s102, entering an assembly laminating machine for assembly packaging.
Further, the first back conductive foil and the second back conductive foil are the same or different in composition and are copper foil, aluminum foil or a composite foil of the copper foil and the aluminum foil.
This battery pack manufacturing process only accomplishes the front electrode and the cavity inner pulp runs through at the battery end, the front electrode is silk screen printing low temperature silver thick liquid, regard as the stifled hole thick liquid with another kind of metal conducting resin simultaneously, through the hole of preparation on the silicon chip before the system fine hair, assemble and run through to the back, back electrode is at the subassembly encapsulation process, it forms to glue the aluminium foil on back TCO through the conducting paste dot matrix, there is insulating isolation between the positive negative pole at the back, compare in the back low temperature silver thick liquid of ordinary HJT battery, the utility model discloses another way has been opened up, once the encapsulation is realized at the subassembly section through cheap aluminium foil, the process flow of battery preparation section has been simplified, one printing has been lacked, one is dried.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Furthermore, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include elements inherent in the list. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element. In addition, parts of the above technical solutions provided in the embodiments of the present application, which are consistent with the implementation principles of corresponding technical solutions in the prior art, are not described in detail so as to avoid redundant description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (4)
1. The MWT-HJT battery structure is characterized by comprising a front TCO layer, a front amorphous silicon layer, a front intrinsic amorphous silicon layer, a monocrystalline silicon substrate, a back intrinsic amorphous silicon layer, a back amorphous silicon layer and a back aluminum film which are sequentially arranged from top to bottom.
2. The MWT-HJT cell structure of claim 1, wherein the front amorphous silicon layer is an N-type amorphous silicon layer or a P-type amorphous silicon layer.
3. The MWT-HJT cell structure of claim 2 wherein if a P-type amorphous silicon layer is used, the backside amorphous silicon layer is an N-type amorphous silicon deposition layer; if the front surface adopts the N-type amorphous silicon layer, the back amorphous silicon layer is a P-type amorphous silicon deposition layer.
4. The MWT-HJT battery structure of claim 1, wherein the front electrode of the battery structure is silk-screen low temperature silver paste, which is gathered and penetrated to the back through holes prepared on the silicon wafer before texturing; the back electrode is an aluminum film, and the anode and the cathode on the back are insulated and isolated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120864511.3U CN216698390U (en) | 2021-04-26 | 2021-04-26 | MWT-HJT battery structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120864511.3U CN216698390U (en) | 2021-04-26 | 2021-04-26 | MWT-HJT battery structure |
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| Publication Number | Publication Date |
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| CN216698390U true CN216698390U (en) | 2022-06-07 |
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| CN202120864511.3U Active CN216698390U (en) | 2021-04-26 | 2021-04-26 | MWT-HJT battery structure |
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| CN (1) | CN216698390U (en) |
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2021
- 2021-04-26 CN CN202120864511.3U patent/CN216698390U/en active Active
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