CN216597584U - High-reliability thick film substrate - Google Patents

High-reliability thick film substrate Download PDF

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Publication number
CN216597584U
CN216597584U CN202123110177.1U CN202123110177U CN216597584U CN 216597584 U CN216597584 U CN 216597584U CN 202123110177 U CN202123110177 U CN 202123110177U CN 216597584 U CN216597584 U CN 216597584U
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China
Prior art keywords
thick film
region
bonding
film substrate
conduction band
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CN202123110177.1U
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Inventor
张超超
唐拓
刘金丽
阳永衡
彭婕
董晶
邓宁
杨正清
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GUIZHOU ZHENHUA FENGGUANG SEMICONDUCTOR CO Ltd
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GUIZHOU ZHENHUA FENGGUANG SEMICONDUCTOR CO Ltd
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

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Abstract

A high-reliability thick film substrate belongs to the field of thick film hybrid integrated circuits. The chip comprises a substrate, a conduction band, a stop band, a chip bonding region, a conduction band bonding region, a related electronic component welding region and an insulating medium covering protection region; the conduction band, the stop band, the chip bonding region, the conduction band bonding region and the related electronic component welding region are printed on the substrate, two ends of the stop band are connected with different conduction bands, the conduction band bonding region and the related electronic component welding region are connected with the corresponding conduction bands, the chip bonding region can be connected with the corresponding conduction bands or is an independent region without connection, and the insulating medium covering protection region covers regions except the bonding, bonding and welding regions. The problem of the in-process of current thick film hybrid integrated circuit batch production, chip, relevant electronic components and thick film substrate's bonding in-process quality control difficulty is solved. The method is widely applied to the technical field of high-reliability hybrid integrated circuits.

Description

High-reliability thick film substrate
Technical Field
The utility model belongs to the field of thick film hybrid integrated circuits, and further relates to the field of thick film hybrid integrated circuit substrates.
Background
With the rapid development of semiconductor integrated circuits, the quality and reliability requirements of semiconductor integrated circuits, especially film hybrid integrated circuits, are higher and higher, and the first transition from early mass production to current and future quality is first. As a branch of semiconductor integrated circuits, the quality and reliability of thick film hybrid integrated circuits are increasingly important, and the thick film substrate of the thick film hybrid integrated circuits is used as an important component in the thick film and plays an important role in the quality and reliability of the thick film hybrid integrated circuits, and the reliability design of the thick film substrate is the first place. For example, the conduction band on the thick film substrate has also been developed from the original single gold conduction band to multiple conduction bands (gold, platinum silver, palladium silver conduction band) according to the reliability of the electrical connection requirement; in order to adapt to the high-reliability packaging process, the material of the substrate is also changed from alumina ceramic to beryllium oxide ceramic with higher thermal conductivity coefficient.
Thick film substrates, in addition to meeting the functional requirements for interconnection, also entail the necessary bonding of chips and related electronic components. An insulating adhesive or a conductive adhesive may be used as necessary. The bonding quality of the adhesive determines the bonding reliability of the chip and the related electronic components on the thick film substrate.
In the process of mass production of thick film hybrid integrated circuits, the adhesion of chips and related electronic components has the following problem of difficult quality control: firstly, the adhesion short circuit is invalid, and the adhesion range is not strictly controlled, so that the conductive adhesive is dropped onto other conduction bands to form a short circuit; secondly, the thick film substrate is not found in time to cause contact resistance or open circuit due to the contamination or scratch of a conduction band on the substrate in the packaging process, thereby causing the circuit failure; the printed thick film substrate is improperly stored, so that a circuit on the ceramic substrate is affected with damp and damaged; the adhesive occupies a large area and is not easy to be accurately controlled, so that the space on the substrate is unreasonably occupied. Therefore, the present invention is proposed to solve the above-mentioned problems, and to provide a method for designing a substrate with reliability, which can prevent the occurrence of the similar problems from the thick film substrate in the mass production process, and can ensure the mass production of the thick film hybrid integrated circuit with simplicity, low process cost, and reliability.
Disclosure of Invention
The purpose of the utility model is: the problem of the in-process of current thick film hybrid integrated circuit batch production, the bonding in-process quality control difficulty of chip, relevant electronic components and thick film substrate is solved. Starting from the design of the thick film substrate, the accurate control of the bonding position and the occupied area of the chip and the related electronic components on the thick film substrate, the antifouling and moistureproof capabilities and the reliability of the thick film substrate are ensured.
Therefore, the utility model provides a highly reliable thick film substrate, which adds an insulating medium covering protective layer (as shown in figure 2) on the basis of the traditional thick film substrate (as shown in figure 1) through the reliability design of the thick film substrate, limits the spreading range of an adhesive on the thick film substrate, and accurately controls the bonding positions of a chip and related electronic components. The method comprises the following steps:
the chip comprises a substrate 1, a conduction band 2, a stop band 3, a chip bonding area 4, a conduction band bonding area 5, a related electronic component welding area 7 and an insulating medium covering protection area 10.
The conduction band 2, the stop band 3, the chip bonding region 4, the conduction band bonding region 5 and the related electronic component welding area 7 are printed on the substrate 1, two ends of the stop band 3 are connected with different conduction bands 2, the conduction band bonding region 5 and the related electronic component welding area 7 are connected with the corresponding conduction bands 2, the chip bonding region 4 can be connected with the corresponding conduction bands 2 or can be an independent region without connection, and the insulating medium covering protection region 10 covers regions except for the bonding, bonding and welding regions.
The conduction band 1 has a conduction function on the thick film substrate, the stop band 3 is used for endowing the substrate with a specific resistance function, the chip bonding area 4 is used for bonding a chip, the conduction band bonding area 5 is used for bonding a chip bonding point or electric connection between two conduction bands through a bonding wire, a related electronic component welding area 7 is used for welding related electronic components such as capacitors, inductors and the like, and the insulating medium covers the protection area 10 and is used for protecting the area which does not need to be bonded, bonded and welded. In the process of printing the insulating medium, printing (complete protection of the circuit on the thick film substrate) is used in all cases except for the regions for adhesion, bonding, and soldering. The printed thick film substrate can avoid the problems of bonding short circuit failure, conduction band scratch, circuit damp failure and the like, and can limit the marking position of the adhesive and accurately control the bonding range of the chip and the electronic component.
The adhesive area and the bonding area are exposed and fixed on the traditional substrate through printing on the traditional thick film substrate, and the rest positions are covered, protected and isolated by the insulating medium. Bonding points on the conduction band are limited in a rectangular bonding area by an insulating medium, and mobility is reduced; the chip bonding position is limited in a fixed rectangular chip bonding area by an insulating medium, so that short circuit caused by an adhesive is avoided; the capacitor bonding position is limited in the fixed rectangular electronic component bonding area by the insulating medium, so that short circuit caused by the adhesive is avoided. Thereby improving the reliability of the thick film substrate.
Compared with the prior art, the utility model has the beneficial effects that: the utility model has the advantages that: this novel thick film substrate can avoid traditional thick film substrate to cause in the packaging process bonding short circuit inefficacy, conduction band fish tail, circuit to wet inefficacy scheduling problem, has designed fixed bonding region, chip bonding region, electronic components bonding region to can realize batch production, improve thick film substrate's reliability.
Drawings
FIG. 1 is a schematic diagram of a conventional thick film substrate structure and assembly.
FIG. 2 is a schematic diagram of a thick film substrate structure after printing with an added insulating medium according to the present invention.
FIG. 3 is a schematic diagram of a conventional thick film substrate of an embodiment.
FIG. 4 is a schematic diagram of a thick film substrate of the present invention.
In the figure: the chip comprises a substrate 1, a conduction band 2, a stop band 3, a chip bonding area 4, a conduction band bonding area 5, a chip 6, a relevant electronic component welding area 7, a relevant electronic component 8, a bonding wire 9 and an insulating medium covering protection area 10.
Detailed Description
With reference to fig. 1, 2, 3, and 4, the embodiment of the present invention is as follows:
in an FX54 series hybrid integrated circuit with a high integration level, as shown in fig. 3, the thick film substrate is limited by the package housing, the area of the thick film substrate is small, and the number of chips and electronic components in the assembly process is large, so that the yield of the circuit is not high due to the influences of the problems of adhesion short circuit failure, conduction band scratch, circuit moisture failure and the like on the thick film substrate. In order to improve the yield of the product, as shown in fig. 4, a more reliable thick film substrate is designed by adopting a design method of a printing insulating medium, a substrate 1 of the substrate is beryllium oxide ceramic, a conduction band 2 is a palladium silver-gold composite conduction band, a stop band 3 is a ruthenium system stop band, a chip bonding region 4 is a platinum silver-palladium silver-gold composite structure, the surface layer is a gold layer, a conduction band bonding region 5 is a platinum silver-palladium silver-gold composite structure, the surface layer is a gold layer, a welding region 7 of related electronic components is a platinum silver-palladium silver-gold composite structure, the surface layer is a gold layer, and an insulating medium covering protection region 10 is a glass glaze protection region. The qualification rate of the product is obviously improved, and the problems of bonding short circuit failure, conduction band scratch, circuit damp failure and the like on the thick film substrate are also avoided.
The foregoing is a further detailed description of the utility model in connection with preferred embodiments and is not intended to limit the utility model to the precise form disclosed. It will be understood by those skilled in the art that various changes in detail may be effected therein without departing from the scope of the utility model as defined by the appended claims.

Claims (8)

1. A high-reliability thick film substrate is characterized by comprising a substrate, a conduction band, a stop band, a chip bonding area, a conduction band bonding area, a related electronic component welding area and an insulating medium covering protection area;
the conduction band, the stop band, the chip bonding region, the conduction band bonding region and the related electronic component welding region are printed on the substrate, two ends of the stop band are connected with different conduction bands, the conduction band bonding region and the related electronic component welding region are connected with the corresponding conduction bands, the chip bonding region can be connected with the corresponding conduction bands or is an independent region without connection, and the insulating medium covering protection region covers regions except the bonding, bonding and welding regions.
2. The highly reliable thick film substrate of claim 1, wherein said conduction band is a platinum silver-palladium silver-gold composite structure and the surface layer is a gold layer.
3. The highly reliable thick film substrate of claim 1, wherein said substrate is a beryllium oxide ceramic.
4. The highly reliable thick film substrate of claim 1, wherein said stopband is a ruthenium based stopband.
5. The highly reliable thick film substrate of claim 1, wherein said die attach region is a platinum silver-palladium silver-gold composite structure and the surface layer is a gold layer.
6. The high reliability thick film substrate of claim 1, wherein said conduction band bonding region is a platinum silver-palladium silver-gold composite structure and the surface layer is a gold layer.
7. The highly reliable thick film substrate of claim 1, wherein said lands of associated electronic components are of platinum silver-palladium silver-gold composite structure and the surface layer is a gold layer.
8. The highly reliable thick film substrate of claim 1, wherein said insulating medium is glass enamel.
CN202123110177.1U 2021-12-13 2021-12-13 High-reliability thick film substrate Active CN216597584U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202123110177.1U CN216597584U (en) 2021-12-13 2021-12-13 High-reliability thick film substrate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202123110177.1U CN216597584U (en) 2021-12-13 2021-12-13 High-reliability thick film substrate

Publications (1)

Publication Number Publication Date
CN216597584U true CN216597584U (en) 2022-05-24

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202123110177.1U Active CN216597584U (en) 2021-12-13 2021-12-13 High-reliability thick film substrate

Country Status (1)

Country Link
CN (1) CN216597584U (en)

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