CN216528856U

CN216528856U - Waterproof packaging structure

Info

Publication number: CN216528856U
Application number: CN202123011435.0U
Authority: CN
Inventors: 不公告发明人
Original assignee: Shenzhen Panyi Microelectronics Technology Co ltd
Current assignee: Shenzhen Panyi Microelectronics Technology Co ltd
Priority date: 2021-12-02
Filing date: 2021-12-02
Publication date: 2022-05-13
Anticipated expiration: 2031-12-02

Abstract

The utility model discloses a waterproof packaging structure, which comprises a semiconductor element, a first pressing sheet and a second pressing sheet, wherein the first pressing sheet is arranged on the semiconductor element; the semiconductor element comprises a first surface and a second surface, wherein the first surface and the second surface are arranged oppositely; one surface of the first pressing plate is provided with a groove, and the surface of the first pressing plate with the groove is connected with the first surface; the second pressing piece is provided with a bulge on one side, and the side with the bulge of the second pressing piece is connected with the second surface. Through protruding, the semiconductor component body on splice bar, the second preforming and the recess on the first preforming form a cross-section jointly for wave or trapezoidal accommodation space of building, can block impurity such as steam that probably permeates along the preforming after filling materials such as epoxy in this accommodation space, and then keep the normal operating of inside components and parts, increase of service life.

Description

Waterproof packaging structure

Technical Field

The utility model relates to the technical field of electronics, in particular to a waterproof packaging structure.

Background

Electronic products have evolved throughout toward smaller size, lighter weight, faster speed, higher frequency, lower cost, and higher reliability.

In the packaging structure in the prior art, the inside of a hole is electroplated to cover a copper conduction technology through laser drilling, so that the electrical conduction of the S pole and the G pole of a chip is led out. Such a package structure easily causes impurities such as water vapor to enter the chip, and influences normal operation and chip service life.

SUMMERY OF THE UTILITY MODEL

In order to solve the above problems, the present invention provides a waterproof package structure, which is suitable for packaging various chips and can reduce the entry of impurities such as water vapor into the chips.

The technical scheme adopted by the utility model is as follows:

a waterproof packaging structure comprises a semiconductor element, a first pressing sheet and a second pressing sheet; the semiconductor element comprises a first surface and a second surface, and the first surface and the second surface are arranged oppositely; one surface of the first pressing plate is provided with a groove, and the surface of the first pressing plate with the groove is connected with the first surface; and one surface of the second pressing sheet is provided with a protrusion, and the surface with the protrusion of the second pressing sheet is connected with the second surface.

Preferably, a plurality of connecting ribs are arranged on the first pressing plate and the second pressing plate.

Preferably, the recess is located above an edge of the first surface.

Preferably, the area of the protrusion is larger than the area of the second surface.

Preferably, the semiconductor element is centrally located on the second wafer.

Preferably, the connecting rib, the protrusion, the semiconductor element and the groove form an accommodating space.

Preferably, the cross section of the accommodating space is wavy or trapezoidal.

Preferably, the accommodating space is filled with an epoxy resin material.

Preferably, the first compressed sheet comprises a first compressed sheet first divided sheet and a first compressed sheet second divided sheet.

Preferably, the first press piece divided piece is not connected with the first press piece divided piece after being packaged.

Compared with the prior art, the waterproof packaging structure has the advantages that the connecting rib, the protrusion on the second pressing sheet, the semiconductor element body and the groove on the first pressing sheet form the containing space with the wave-shaped or trapezoid-shaped cross section, and after materials such as epoxy resin are filled in the containing space, impurities such as water vapor and the like which possibly permeate along the pressing sheet can be blocked, so that the normal operation of internal components is kept, and the service life is prolonged.

Drawings

In order to more clearly explain the technical solution in the embodiments of the present application, the drawings that are required to be used in the embodiments of the present application will be described below.

Fig. 1 is a schematic structural diagram of a waterproof package structure according to an embodiment of the present invention;

fig. 2 is a schematic top view of a waterproof package structure according to an embodiment of the present invention;

FIG. 3 is a schematic cross-sectional view A-A of FIG. 2;

FIG. 4 is a schematic view of a first preform according to an embodiment of the present invention;

fig. 5 is a schematic top view of a heat dissipation structure according to an embodiment of the present invention;

fig. 6 is a schematic structural diagram of a heat dissipation structure according to an embodiment of the present invention;

fig. 7 is a schematic front view of a heat dissipation structure according to an embodiment of the present invention;

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the utility model and are not intended to limit the utility model.

The terms "first", "second", and the like in the embodiments of the present invention are only used for distinguishing related technical features, and do not indicate a sequential order. It should be understood that the data so used may be interchanged under appropriate circumstances such that embodiments of the application described herein may be used. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

In this application, the terms "upper", "lower", "inner", "middle", "outer", "front", "rear", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings. These terms are used primarily to better describe the present application and its embodiments, and are not used to limit the indicated devices, elements or components to a particular orientation or to be constructed and operated in a particular orientation.

Moreover, some of the above terms may be used to indicate other meanings besides the orientation or positional relationship, for example, the term "on" may also be used to indicate some kind of attachment or connection relationship in some cases. The specific meaning of these terms in this application will be understood by those of ordinary skill in the art as appropriate.

Furthermore, the terms "disposed," "connected," and "secured" are to be construed broadly. For example, "connected" may be a fixed connection, a detachable connection, or a unitary construction; can be a mechanical connection, or an electrical connection; may be directly connected, or indirectly connected through intervening media, or may be in internal communication between two devices, elements or components.

Example 1

The embodiment of the utility model provides a waterproof packaging structure, which is mainly applied to a Semiconductor element in a power device packaging element, for example, a waterproof packaging structure applied to an electronic element in a high-power transistor, a Thyristor, a bidirectional Thyristor GTO (Gate-Turn-Off Thyristor), a mosfet (metal Oxide Semiconductor Field Effect transistor), an igbt (insulated Gate bipolar transistor), and the like.

As shown in fig. 1 to 4, comprises a semiconductor element 110, a first pressing piece 200, a second pressing piece 300; the semiconductor element 110 includes a first surface and a second surface, the first surface and the second surface being disposed opposite to each other; one surface of the first pressing sheet 200 is provided with a groove 210, and one surface of the first pressing sheet 200, which is provided with the groove 210, is connected with the first surface; a protrusion 310 is formed on one surface of the second pressing plate 300, and the surface of the second pressing plate 300 having the protrusion 310 is connected to the second surface. The semiconductor element 110 may be understood as the semiconductor element 110 or the crystalline silicon layer, and may be other elements capable of implementing the above-mentioned functions, such as a flat rectangular structure as shown in fig. 3, a flat circular structure, etc., and the specific shape and configuration may be determined according to actual needs and production variations. The first surface and the second surface are generally disposed opposite to each other, but are not necessarily disposed opposite to each other, and may be disposed adjacent to each other without affecting the function.

The first pressing piece 200 and the second pressing piece 300 are provided with a plurality of connecting ribs 400, generally, the connecting ribs 400 are provided on each side of the pressing pieces as shown in fig. 1, and the number and width of the connecting ribs 400 are generally determined according to the size of the semiconductor element 110. Generally, the larger the semiconductor element 110, the more the connection ribs 400 are provided.

The first pressing piece 200 and the second pressing piece 300 are generally shaped substantially the same as the semiconductor device 110, and the area of the first pressing piece 200 is generally larger than that of the first surface of the semiconductor device 110, and the area of the second pressing piece 300 is generally larger than that of the second surface of the semiconductor device 110.

The recess 210 is generally an annular recess 210 as shown in fig. 4, such that when the first wafer 200 is attached to the semiconductor device 110, the recess 210 is located over all edges of the first surface.

The area of the protrusion 310 is larger than that of the second surface, and the semiconductor device 110 is centrally disposed on the second pressing plate 300, so that a trapezoidal drop is formed between the semiconductor device 110 and the protrusion 310 after the second pressing plate 300 is connected to the semiconductor device 110.

When the first pressing piece 200 and the second pressing piece 300 are connected to the semiconductor element 110, the connection rib 400, the protrusion 310, the semiconductor element 110 and the groove 210 form a receiving space 500 having a wave-shaped or trapezoidal cross section as shown in fig. 3.

And then injection molding and sealing are carried out around the whole electronic element, wherein the electronic element can be made of a glowing injection molding epoxy resin material. One specific embodiment is that the electronic element is visited in a forming mould, epoxy resin material is added into a feeding port for injection molding at high temperature and pressure, the epoxy resin material is melted at high temperature and flows into the injection mould for wrapping and forming around the electronic element. At this time, the epoxy resin material is filled in the accommodating space 500.

The protrusion 310, the semiconductor element 110 and the groove 210 may form an accommodating space 500 with a wave-shaped or trapezoid cross section, that is, if only epoxy resin and other materials are filled, impurities such as water vapor which may permeate along the pressed sheet are blocked, so as to maintain normal operation of internal components and prolong service life, and the arrangement of the connecting rib 400 is not a necessary technical feature for forming the accommodating space 500.

The first compressed sheet 200 includes a first compressed sheet first segment 200-1 and a first compressed sheet second segment 200-2. The first wafer 200-1 is not connected to the second wafer 200-2 after packaging.

Example 2

The embodiment of the utility model provides a heat dissipation structure, which is mainly applied to a chip in a power device packaging element, such as a heat dissipation structure applied to an electronic element in a high-power transistor, a Thyristor, a bidirectional Thyristor GTO (Gate-Turn-Off Thyristor), a MOSFET (metal Oxide Semiconductor Field Effect transistor), an IGBT (insulated Gate bipolar transistor) and the like.

As shown in fig. 5-7, the heat dissipation structure 100 of the embodiment of the present invention includes a semiconductor element 110, a first conductive sheet 140, a second conductive sheet 150, and a third conductive sheet 160; the semiconductor element 110 includes a first surface and a second surface, the first surface is provided with an S-level 120 and a G-level 130, the first conductive sheet 140 is disposed on the S-level 120, the second conductive sheet 150 is disposed on the G-level 130, and the third conductive sheet 160 is disposed on the second surface; the S-stage 120 and the G-stage 130 are disconnected and have a gap. The semiconductor element 110 may be simply understood as a "chip" or a crystalline silicon layer, and may be other elements capable of implementing the above two functions, such as a flat rectangular structure as shown in fig. 2, a flat circular structure, etc., and the specific shape and configuration may be determined according to actual needs and production variations. The first surface and the second surface are generally oppositely arranged as shown in the figure, but are not necessarily oppositely arranged, and can also be adjacently arranged on the premise of not influencing the function.

The first conductive sheet 140, the second conductive sheet 150, and the third conductive sheet 160 are made of silver, which is a material that can be used for chip manufacturing at present, and the silver is selected as the conductive sheet material, so that the heat dissipation capability of the chip is improved, and the conductive sheet can be used for circuit conduction.

The first, second, and third conductive sheets 160 may be formed by electroplating, or may be fixed to the semiconductor element 110 by pressing or the like. Through the double-sided arrangement, the heat dissipation area can be increased, and the running performance of the chip is improved.

The first conductive sheet 140 has the same shape as the S-stage 120, and has an area smaller than the S-stage 120, and the first conductive sheet 140 is centrally disposed on the S-stage 120.

The second conductive sheet 150 has the same shape as the G-stage 130, and has an area smaller than the G-stage 130, and the second conductive sheet 150 is centrally disposed on the G-stage 130.

The area of the third conductive sheet 160 is the same as that of the second surface.

The edge of the S-stage 120 is 0.3mm or more from the edge of the first surface, and when the distance from the edge of the first surface is 0.6mm or more, the requirement of high pressure can be met.

The edge of the G-stage 130 is 0.3mm or more from the edge of the first surface, and when the distance from the edge of the first surface is 0.6mm or more, the requirement of high pressure can be met.

The area of the S pole 120 and the G pole 130 is not less than 80% of the first surface, and the specific silver paste coating area and range are determined according to the specification size of a chip in actual production and a chip pad area.

The coverage area of the silver is increased as much as possible, the heat dissipation capability of a subsequent chip can be enhanced, and the distance of electron transmission can be reduced.

The distance between the S pole 120 and the G pole 130 is greater than or equal to 0.2mm, and the S pole 120 and the G pole 130 may contain insulating fillers. No short circuit between the S-pole 120 and the G-stage 130 is ensured by the insulating filler.

In the heat dissipation structure of the embodiment, the first and second conductive sheets with the largest area as possible are arranged on the first surface provided with the S pole 120 and the G pole 130, and the third conductive sheet covers the second surface completely, so that the heat dissipation area is increased, the heat dissipation capability is improved, and the operation performance of the chip is improved; the S pole and the G pole are spaced reasonably to reduce the possibility of short circuit.

Example 1 can be better understood by example 2.

While the utility model has been described with reference to specific preferred embodiments, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the utility model as defined in the following claims. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.

Claims

1. A waterproof packaging structure is characterized by comprising a semiconductor element (110), a first pressing sheet (200) and a second pressing sheet (300);

the semiconductor element (110) comprises a first surface and a second surface, wherein the first surface and the second surface are arranged oppositely;

a groove (210) is formed in one surface of the first pressing plate (200), and one surface, provided with the groove (210), of the first pressing plate (200) is connected with the first surface;

and one surface of the second pressing plate (300) is provided with a bulge (310), and the surface of the second pressing plate (300) with the bulge (310) is connected with the second surface.

2. The waterproof sealing structure according to claim 1, wherein a plurality of connecting ribs (400) are provided on the first pressing plate (200) and the second pressing plate (300).

3. The waterproof encapsulation structure of claim 2, characterized in that the groove (210) is located above an edge of the first surface.

4. The waterproof packaging structure of claim 3, characterized in that the area of the protrusion (310) is larger than the area of the second surface.

5. The waterproof packaging structure of claim 4, characterized in that said semiconductor element (110) is centrally located on said second presser plate (300).

6. The waterproof packaging structure of claim 5, wherein the connecting rib (400), the protrusion (310), the semiconductor element (110) and the groove (210) form a receiving space (500).

7. The waterproof packaging structure of claim 6, wherein the cross section of the accommodating space (500) is wave-shaped or trapezoid-shaped.

8. The waterproof packaging structure according to claim 6 or 7, characterized in that the accommodating space (500) is filled with an epoxy resin material.

9. The waterproof sealing structure according to any one of claims 1 to 7, wherein said first pressing sheet (200) comprises a first pressing sheet one-piece (200-1) and a first pressing sheet two-piece (200-2).

10. The waterproof sealing structure according to claim 9, wherein the first press piece (200-1) is not connected to the first press piece (200-2) after sealing.