CN216435910U - Terminal structure of shielded gate MOSFET device - Google Patents
Terminal structure of shielded gate MOSFET device Download PDFInfo
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- CN216435910U CN216435910U CN202122875604.9U CN202122875604U CN216435910U CN 216435910 U CN216435910 U CN 216435910U CN 202122875604 U CN202122875604 U CN 202122875604U CN 216435910 U CN216435910 U CN 216435910U
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Abstract
The utility model relates to a shielded gate MOSFET device terminal structure, including the substrate, set up a plurality of active area grid trenches, at least one terminal partial pressure ring slot and at least one terminal stop ring slot on the substrate, terminal partial pressure ring slot has part or whole bent part, sets up terminal partial pressure ring slot source contact hole on the terminal partial pressure ring slot, and the substrate between the adjacent active area grid trenches passes through source contact hole and conductive metal level connection source metal, terminal partial pressure ring slot also is connected with source metal through terminal partial pressure ring slot source contact hole and conductive metal level; by arranging the bending part, the charges between the adjacent active area grid grooves, the charges between the near end of the active area grid groove and the near end of the terminal voltage-dividing ring groove and the charges between the adjacent active area grid groove and the far end of the terminal voltage-dividing ring groove are uniformly exhausted, and the leakage current of the terminal device in the voltage-resisting process is further reduced.
Description
Technical Field
The utility model relates to a semiconductor chip technical field especially relates to shielding bars MOSFET device terminal structure.
Background
Shielded gate power MOSFETs, i.e., SGT MOSFETs, are an improvement over conventional U-MOSFET technology. Compared with a U-MOSFET product, the low-resistance high-voltage power supply reduces the characteristic on-resistance, improves the switching speed, reduces the switching loss and obviously optimizes the overall performance.
The shielded gate MOSFET changes the triangular electric field distribution in the body into the rectangular electric field distribution by introducing two vertical polycrystalline field plates in the body, thereby increasing the avalanche breakdown voltage. The method utilizes two-dimensional charge depletion effect, wherein a doped body region and a drift region are mutually depleted, and a shielding grid structure and the drift region are mutually depleted, so that the requirements on withstand voltage of a device can be met while the doping concentration of the drift region is improved and the on-resistance is reduced, but the terminal structure of the existing shielding grid MOSFET device has the following problems:
the charge depletion degree of the terminal structure (I) determines the stability of avalanche breakdown voltage of the shielded gate MOSFET device, and when the charges in the terminal region of the conventional structure cannot be perfectly depleted, the voltage resistance of the terminal of the device is easy to be unstable.
Due to the fact that charge depletion in multiple directions exists in the terminal structure, a process window is small, and process fluctuation can cause large electric leakage of the device in the voltage-resisting process, and application requirements of customers cannot be met.
Disclosure of Invention
In view of the above-discussed shortcomings of the prior art, it is an object of the present invention to provide a shielded gate MOSFET device termination structure that solves one or more of the problems of the prior art.
In order to achieve the above purpose, the technical scheme of the utility model is as follows:
the terminal structure of the shielding grid MOSFET device comprises a substrate, wherein a plurality of active area grid grooves, at least one terminal voltage division ring groove and at least one terminal stopping ring groove are formed in the substrate, and the terminal structure comprises a substrate
The active area grid groove is provided with a grid contact hole and is connected with grid metal through the grid contact hole and the conductive metal layer;
the terminal voltage division ring groove is provided with a part or all of bent parts, a terminal voltage division ring groove source electrode contact hole is formed in the terminal voltage division ring groove, a source electrode contact hole is formed in the substrate between the adjacent active area grid electrode grooves and the terminal voltage division ring groove, the substrate between the adjacent active area grid electrode grooves is connected with source electrode metal through the source electrode contact hole and the conductive metal layer, and the terminal voltage division ring groove is also connected with the source electrode metal through the terminal voltage division ring groove source electrode contact hole and the conductive metal layer;
and a stop ring drain contact hole is formed in the terminal stop ring groove, and the terminal stop ring groove is connected with terminal drain contact metal through a conductive metal layer and the stop ring drain contact hole.
Furthermore, the terminal voltage division ring groove is provided with a plurality of protruding portions and a plurality of concave portions by the aid of the bending portions, and each protruding portion is adjacent to each concave portion.
Further, the bending portion is disposed at a proximal end of the terminal voltage-dividing ring trench, a first longitudinal distance L1 is formed between the proximal end of each active area gate trench and the concave portion, a second longitudinal distance L2 is formed between the proximal end of each active area gate trench and the convex portion, and the first longitudinal distance L1 is greater than the second longitudinal distance L2.
Furthermore, the far end of the terminal voltage-dividing ring groove is a non-bending part, and a first transverse distance L3 is formed between the active region gate groove close to the terminal voltage-dividing ring groove and the non-bending part.
Further, the bending portion is arranged at the near end and the far end of the terminal voltage dividing ring groove, a second transverse interval L4 is formed between one active area grid groove of the terminal voltage dividing ring groove and the concave portion of the bending portion, a third transverse interval L5 is formed between one active area grid groove of the terminal voltage dividing ring groove and the convex portion of the bending portion, and the second transverse interval L4 is larger than the third transverse interval L5.
Further, the groove width W1 of the active region gate trench is smaller than the groove width W2 of the termination voltage divider trench.
Furthermore, the terminal voltage division ring groove has and bends and will the active area grid groove surrounds, terminal voltage division ring groove source contact hole set up in the department of bending of terminal voltage division ring groove.
Further, the curved portion is a wave shape.
Compared with the prior art, the utility model discloses a beneficial technological effect as follows:
the utility model discloses a set up part or whole bent part on with terminal dividing ring slot, and then make the longitudinal separation who forms between active area grid slot near-end and the terminal dividing ring slot elongate or shorten, the same horizontal interval that also makes to form between the distal end of active area grid slot terminal dividing ring slot lengthens or shortens, and then make the electric charge between the adjacent active area grid slot, electric charge between the near-end of active area grid slot and the near-end of terminal dividing ring slot, and the electric charge between the distal end of adjacent active area grid slot and terminal dividing ring slot all by evenly exhausting, the leakage current of terminal device at withstand voltage in-process has further been reduced.
Drawings
Fig. 1 is a schematic diagram illustrating a planar structure of a terminal structure of a shielded gate MOSFET device according to an embodiment of the present invention, wherein a gate trench of an active area is located at a first position.
Fig. 2 is a schematic diagram illustrating a planar structure of a terminal structure of a shielded gate MOSFET device according to an embodiment of the present invention, wherein the gate trench of the active area is located at a second position.
Fig. 3 is a schematic plane structure diagram of a terminal structure of a double shielded gate MOSFET device according to an embodiment of the present invention.
In the drawings, the reference numbers: 201. an active region; 202. a terminal area; 203. an active region gate trench; 204. a terminal voltage division ring groove; 2040. a projection; 2041. a recessed portion; 205. a terminal stop ring groove; 206. a source contact hole; 207. a gate contact hole; 208. a terminal voltage division ring groove source contact hole; 209. a stop ring drain contact hole; 210. a gate metal; 211. a source metal; 212. a terminal drain contact metal; 213. a substrate.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more clearly understood, the terminal structure of the shielded gate MOSFET device provided in the present invention is described in further detail below with reference to the accompanying drawings and the following detailed description. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention. To make the objects, features and advantages of the present invention more comprehensible, please refer to the attached drawings. It should be understood that the structure, ratio, size and the like shown in the drawings attached to the present specification are only used for matching with the content disclosed in the specification, so as to be known and read by those skilled in the art, and are not used for limiting the limitation of the implementation of the present invention, so that the present invention does not have the essential significance in the technology, and any modification of the structure, change of the ratio relationship or adjustment of the size should still fall within the scope of the technical content disclosed in the present invention without affecting the function and the achievable purpose of the present invention.
The first embodiment is as follows:
referring to fig. 1, the terminal structure of the shielded gate MOSFET device of the present invention includes a substrate 213, and a plurality of active area gate trenches 203, at least one terminal grading ring trench 204 and at least one terminal stopping ring trench 205 are formed on a surface of the substrate 213. Specifically, the embodiment of the utility model provides a in the terminal structure, terminal partial pressure ring slot 204 sets up in the outside of active area grid slot 203, and terminal partial pressure ring slot 204 has and bends and surrounds all active area grid slots 203, the part of bending makes terminal partial pressure ring slot 204 forms the transverse groove and the vertical groove of a body coupling. A terminal stop ring groove 205 is provided on the substrate 213 outside the terminal voltage-dividing ring groove 204.
Correspondingly, the number of the terminal voltage-dividing ring grooves 204 can be adjusted according to the rated voltage requirement of the terminal device, and when the rated voltage is high, the number of the terminal voltage-dividing ring grooves 204 can be correspondingly increased.
Correspondingly, in other embodiments of the present invention, if the number of the terminal grading ring groove 204 is more than one, then only one terminal grading ring groove source contact hole 208 is opened on one terminal grading ring groove 204 close to the active area gate groove 203.
Further, with continued reference to fig. 1, a gate contact hole 207 is opened on the active region gate trench 203, and the active region gate trench 203 is connected to a gate metal 210 through the gate contact hole 207 and a conductive metal layer, wherein the conductive metal layer is a conventional one, such as polysilicon, and has an insulating dielectric layer below the conductive metal layer. Further, with reference to fig. 1, the terminal voltage-dividing ring trench 204 has a partially curved portion, a terminal voltage-dividing ring trench source contact hole 208 is formed in the terminal voltage-dividing ring trench 204, a source contact hole 206 is further formed in the substrate 213 between the adjacent active region gate trenches 203 and between the adjacent active region gate trench 203 and the terminal voltage-dividing ring trench 204, wherein the substrate 213 between the adjacent active region gate trenches 203 is connected to the source metal 211 through the source contact hole 206 and the conductive metal layer, and similarly, the terminal voltage-dividing ring trench 204 is also connected to the source metal 211 through the terminal voltage-dividing ring trench source contact hole 208 and the conductive metal layer. Preferably, the terminal voltage-dividing ring groove source electrode contact hole 208 can be opened at a bending position of the terminal voltage-dividing ring groove 204, and the electric field at the bending position is strong, so that the terminal voltage-dividing ring groove source electrode contact hole 208 is opened to facilitate the potential grounding of the whole terminal voltage-dividing ring, and the potential is prevented from floating during the potential conduction.
Further, with continued reference to fig. 1, a stop-ring drain contact hole is opened in the stop-ring trench 205, and the stop-ring trench 205 is connected to the drain contact metal 212 through the conductive metal layer and the stop-ring drain contact hole 209.
Further, with reference to fig. 1, the active region gate trench 203, the source contact hole 206, the gate contact hole 207 and the source metal 211 all belong to the active region 201, and the terminal grading ring trench 204, the terminal stopping ring trench 205, the stopping ring drain contact hole 209 and the gate metal 210 all belong to the terminal region.
Specifically, with reference to fig. 1, the terminal grading ring groove 204 has a plurality of protrusions 2040 and a plurality of recesses 2041 by the curved portion, and each protrusion 2040 is disposed adjacent to each recess 2041.
Accordingly, the curved portion has a wave shape.
Further, with continued reference to fig. 1, the curved portion is disposed at a proximal end of the terminal grading ring trench 204, wherein the proximal end of the terminal grading ring trench 204 is an end close to a short side of the active area gate trench 203. The embodiment of the present invention provides a first longitudinal distance L1 is formed between the proximal end of each active area gate trench 203 and the concave portion 2041 in the terminal structure of the shielded gate MOSFET device, wherein the proximal end of the active area gate trench 203 is the end near the curved portion, the distal end of the terminal grading ring trench 204 is the non-curved portion, and a first transverse distance L3 is formed between the active area gate trench 203 and the non-curved portion near the terminal grading ring trench 204.
Further, with reference to fig. 1, compared with the prior art, by changing the proximal end of the termination strap trench 204 into a curved portion, the first longitudinal distance L1 formed between the proximal end of the active region gate trench 203 and the concave portion 2041 is lengthened and increased compared with the conventional distance, and the first lateral distance L3 formed between one active region gate trench 203 close to the termination strap trench 204 and the non-curved portion is unchanged compared with the conventional distance, so that the first longitudinal distance L1 is lengthened while the charge depletion effect at this position is reduced, so that the charges between two adjacent active region gate trenches 203 are depleted, and the charges between the proximal end of the active region gate trench 203 and the termination strap trench 204 are uniformly depleted, thereby reducing the leakage current of the termination device during the voltage withstanding process.
Example two:
a difference between the second embodiment and the first embodiment is that the active area gate trenches 203 are disposed at different positions, referring to fig. 2, the proximal ends of the active area gate trenches 203 are close to the protruding portions 2040 of the curved portions, wherein a second longitudinal distance L2 is formed between the proximal end of each active area gate trench 203 and the protruding portion 2040, and the first longitudinal distance L1 is greater than the second longitudinal distance L2. Compared with the prior art, the proximal end of the terminal voltage-dividing ring trench 204 is changed into the bent portion, so that the first longitudinal distance L1 formed between the proximal end of the active region gate trench 203 and the recess 2041 is shortened and reduced compared with the conventional distance, and therefore, the charge depletion effect at the position is enhanced while the first longitudinal distance L1 is lengthened, so that charges between two adjacent active region gate trenches 203 are depleted, and charges between the active region gate trench 203 and the terminal voltage-dividing ring trench 204 are uniformly depleted, and further, the leakage current of the terminal device in the voltage withstanding process is reduced.
Example three:
the third embodiment is different from the second embodiment in that the bent portions are disposed at the proximal end and the distal end of the terminal voltage-dividing ring groove 204, where the distal end of the terminal voltage-dividing ring groove 204 refers to an end corresponding to the long side of the active-region gate groove 203, a second lateral distance L4 is formed between one of the active-region gate grooves 203 close to the terminal voltage-dividing ring groove 204 and the concave portion 2041 of the bent portion, a third lateral distance L5 is formed between one of the active-region gate grooves 203 close to the terminal voltage-dividing ring groove 204 and the convex portion 2040 of the bent portion, and the second lateral distance L4 is greater than the third lateral distance L5. Similarly, the distance L1, the distance L2, the distance L4, and the distance L5 enable the charge depletion effect of the electric field at the near end and the far end of the active region gate trench 203 corresponding to the termination voltage-dividing ring trench 204 to be continuously increased or decreased, so that charges between adjacent active region gate trenches 203, charges at the far ends of the active region gate trench 203 and the termination voltage-dividing ring trench 204, and charges at the near ends of the active region gate trench 203 and the termination voltage-dividing ring trench 204 are all depleted, and further leakage current in the voltage-withstanding process of the termination device is reduced.
Further, referring to fig. 3, the trench width W1 of the active region gate trench 203 is smaller than the trench width W2 of the termination voltage divider trench 204, which is beneficial to alleviating electric field concentration and effectively increasing the voltage endurance capability of the termination voltage divider trench 204.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only represent some embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the present invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (8)
1. Shielding bars MOSFET device terminal structure, its characterized in that: the terminal structure comprises a substrate, wherein a plurality of active area grid grooves, at least one terminal voltage division ring groove and at least one terminal stopping ring groove are formed in the substrate, wherein
The active area grid groove is provided with a grid contact hole and is connected with grid metal through the grid contact hole and the conductive metal layer;
the terminal voltage division ring groove is provided with a part or all of bent parts, a terminal voltage division ring groove source electrode contact hole is formed in the terminal voltage division ring groove, a source electrode contact hole is formed in the substrate between the adjacent active area grid electrode grooves and the terminal voltage division ring groove, the substrate between the adjacent active area grid electrode grooves is connected with source electrode metal through the source electrode contact hole and the conductive metal layer, and the terminal voltage division ring groove is also connected with the source electrode metal through the terminal voltage division ring groove source electrode contact hole and the conductive metal layer;
and a stop ring drain contact hole is formed in the terminal stop ring groove, and the terminal stop ring groove is connected with terminal drain contact metal through a conductive metal layer and the stop ring drain contact hole.
2. The shielded gate MOSFET device termination structure of claim 1 wherein: the bending part enables the terminal voltage division ring groove to be provided with a plurality of protruding parts and a plurality of concave parts, and each protruding part and each concave part are arranged adjacently.
3. The shielded gate MOSFET device termination structure of claim 2 wherein: the bending portion is arranged at the near end of the terminal voltage-dividing ring groove, a first longitudinal interval L1 is formed between the near end of each active area grid groove and the concave portion, a second longitudinal interval L2 is formed between the near end of each active area grid groove and the convex portion, and the first longitudinal interval L1 is larger than the second longitudinal interval L2.
4. The shielded gate MOSFET device termination structure of claim 3 wherein: the far end of the terminal voltage-dividing ring groove is a non-bending part, and a first transverse distance L3 is formed between one active area grid groove close to the terminal voltage-dividing ring groove and the non-bending part.
5. The shielded gate MOSFET device termination structure of claim 2 wherein: the bending part set up in the near-end and the distal end of terminal partial pressure ring groove are close to form second transverse interval L4 between an active area grid groove of terminal partial pressure ring groove and the depressed part of bending part, are close to form third transverse interval L5 between an active area grid groove of terminal partial pressure ring groove and the bulge of bending part, second transverse interval L4 is greater than third transverse interval L5.
6. The shielded gate MOSFET device termination structure of claim 1 wherein: the groove width W1 of the active area gate groove is smaller than the groove width W2 of the terminal voltage division ring groove.
7. The shielded gate MOSFET device termination structure of claim 1 wherein: the terminal partial pressure ring groove is provided with a bending part and surrounds the active area grid groove, and the terminal partial pressure ring groove source electrode contact hole is formed in the bending part of the terminal partial pressure ring groove.
8. The shielded gate MOSFET device termination structure of claim 1 wherein: the curved portion is wave-shaped.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202122875604.9U CN216435910U (en) | 2021-11-23 | 2021-11-23 | Terminal structure of shielded gate MOSFET device |
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| CN202122875604.9U CN216435910U (en) | 2021-11-23 | 2021-11-23 | Terminal structure of shielded gate MOSFET device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116544269A (en) * | 2023-07-06 | 2023-08-04 | 无锡美偌科微电子有限公司 | Charge balance power semiconductor device for improving terminal voltage endurance capability |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116544269A (en) * | 2023-07-06 | 2023-08-04 | 无锡美偌科微电子有限公司 | Charge balance power semiconductor device for improving terminal voltage endurance capability |
| CN116544269B (en) * | 2023-07-06 | 2023-09-12 | 无锡美偌科微电子有限公司 | Charge balance power semiconductor device for improving terminal voltage endurance capability |
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