CN216434437U - Wavelength selection all-optical switch based on surface plasmon polaritons - Google Patents
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 48
- 238000004891 communication Methods 0.000 claims abstract description 5
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
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Abstract
Description
技术领域technical field
本发明基于表面等离子体激元的波长选择全光开关属于微纳光电子技术领域。The wavelength-selective all-optical switch based on the surface plasmon polariton of the invention belongs to the technical field of micro-nano optoelectronics.
背景技术Background technique
表面等离子体激元是一种沿着金属与电介质分界面传播,并在分界面的垂直方向呈指数衰减的电磁倏逝波,该电磁波具有突破传统衍射极限和电场约束等性能。Surface plasmon is an electromagnetic evanescent wave that propagates along the interface between metal and dielectric and decays exponentially in the vertical direction of the interface. The electromagnetic wave has the properties of breaking the traditional diffraction limit and electric field confinement.
作为典型的基于表面等离子体滤波器的波导结构,金属-介质-金属结构具有对光高约束和易于制造等特点,因此,基于表面等离子体激元的金属-介质-金属结构被应用在了不同的光子元件中,如传感器、马赫曾德干涉仪、滤波器等。As a typical waveguide structure based on surface plasmon filter, metal-dielectric-metal structure has the characteristics of high light confinement and easy fabrication. Therefore, surface plasmon-based metal-dielectric-metal structure has been applied in different photonic components, such as sensors, Mach-Zehnder interferometers, filters, etc.
在高速光通信系统中,光开关作为关键节点器件用于实现光交叉连接、光交换、光分插复用以及网络自愈保护等功能。目前,随着高度集成全关器件的发展,全光开关抗电磁干扰,响应速度快等特点的需求越来越明显,但现有全光开关大多用于对单一波长光信号进行开关,波长不可选择,结构复杂且消光比较低,实现波长可选择,结构简单且具有高消光比的多通道光开关显得尤为重要。In high-speed optical communication systems, optical switches are used as key node devices to realize functions such as optical cross-connect, optical switching, optical add-drop multiplexing, and network self-healing protection. At present, with the development of highly integrated all-off devices, the demand for all-optical switches to resist electromagnetic interference and fast response becomes more and more obvious. However, most of the existing all-optical switches are used to switch single-wavelength optical signals, and the wavelength cannot be It is particularly important to choose a multi-channel optical switch with complex structure and low extinction ratio, realizing wavelength selection, simple structure and high extinction ratio.
发明内容SUMMARY OF THE INVENTION
为了实现上述目的,本发明公开了基于表面等离子体激元的波长选择全光开关,该全光开关通过在不同直波导进行入射,实现波长可选择,结构简单且消光比高。In order to achieve the above purpose, the present invention discloses a wavelength-selective all-optical switch based on surface plasmon polaritons. The all-optical switch realizes wavelength selectivity by entering different straight waveguides, with simple structure and high extinction ratio.
本发明的目的是这样实现的:The object of the present invention is achieved in this way:
基于表面等离子体激元的波长选择全光开关,由基底层和矩形金属层组成,所述矩形金属层紧贴于基底层上方,在矩形金属层上刻蚀与矩形金属层等高的第一直波导、第二直波导、第三直波导、第四直波导和等边三角形谐振腔,其中,第二直波导和第四直波导与矩形金属层长边方向相同,第一直波导和第三直波导与矩形金属层长边方向的夹角均为60°;在等边三角形谐振腔内,还设置有与矩形金属层等高且中心与等边三角形谐振腔内心重合的矩形金属块。The wavelength selective all-optical switch based on surface plasmon is composed of a base layer and a rectangular metal layer. The straight waveguide, the second straight waveguide, the third straight waveguide, the fourth straight waveguide and the equilateral triangular resonant cavity, wherein the second straight waveguide and the fourth straight waveguide are in the same direction as the long sides of the rectangular metal layer, and the first straight waveguide and the fourth straight waveguide are in the same direction as the long sides of the rectangular metal layer. The angle between the three-straight waveguide and the longitudinal direction of the rectangular metal layer is 60°; in the equilateral triangular resonator cavity, a rectangular metal block having the same height as the rectangular metal layer and the center of the equilateral triangular resonant cavity coincident is also arranged.
上述基于表面等离子体激元的波长选择全光开关,尺寸限定如下:The above-mentioned wavelength-selective all-optical switch based on surface plasmon polaritons has the following dimensions:
所述矩形金属层的尺寸为1160nm×530nm×75nm;The size of the rectangular metal layer is 1160nm×530nm×75nm;
所述第一直波导的宽度为50nm,与等边三角形谐振腔的距离为d1=18nm;The width of the first straight waveguide is 50 nm, and the distance from the equilateral triangular resonator is d 1 =18 nm;
所述第二直波导的宽度为50nm,与等边三角形谐振腔的距离为d2=20nm~50nm;The width of the second straight waveguide is 50nm, and the distance from the equilateral triangular resonator is d 2 =20nm~50nm;
所述第三直波导的宽度为50nm,与等边三角形谐振腔的距离为d3=18nm;The width of the third straight waveguide is 50 nm, and the distance from the equilateral triangular resonator is d 3 =18 nm;
所述第四直波导的宽度为50nm,与等边三角形谐振腔的距离为d4=10nm~40nm;The width of the fourth straight waveguide is 50 nm, and the distance from the equilateral triangular resonator is d 4 =10 nm˜40 nm;
所述等边三角形谐振腔的边长为484nm;The side length of the equilateral triangular resonator is 484 nm;
所述矩形金属块的长h=200nm,宽w=20nm~50nm。The length h=200nm of the rectangular metal block, and the width w=20nm˜50nm.
更进一步地,所述基底层为二氧化硅材料,所述矩形金属层和矩形金属块为银材料,所述第一直波导、第二直波导、第三直波导、第四直波导和等边三角形谐振腔与空气连通。Further, the base layer is made of silicon dioxide material, the rectangular metal layer and the rectangular metal block are made of silver material, the first straight waveguide, the second straight waveguide, the third straight waveguide, the fourth straight waveguide and so on. The side-triangular resonator is in communication with the air.
有益效果:Beneficial effects:
第一,本发明基于表面等离子体激元的波长选择全光开关,只包括基底层、矩形金属层和矩形金属块三个实体结构,以及第一直波导、第二直波导、第三直波导、第四直波导和等边三角形谐振腔五个刻蚀结构,相比于其他全光开关,具有结构简单的技术优势。First, the wavelength-selective all-optical switch of the present invention based on surface plasmon polaritons only includes three solid structures: a base layer, a rectangular metal layer, and a rectangular metal block, as well as a first straight waveguide, a second straight waveguide, and a third straight waveguide. Compared with other all-optical switches, it has the technical advantage of simple structure.
第二,本发明基于表面等离子体激元的波长选择全光开关,通过在不同直波导内进行入射即可对不同波长光信号进行开关调制,相比于其他全光开关,具有波长可选择的技术优势。Second, the present invention is based on a wavelength-selective all-optical switch based on surface plasmon polaritons, which can switch and modulate optical signals of different wavelengths by incident in different straight waveguides. Compared with other all-optical switches, it has wavelength-selective Technical advantages.
第三,本发明基于表面等离子体激元的波长选择全光开关,最高消光比可以达到11.7dB,相比于其他全光开关,具有高消光比的技术优势。Third, the present invention is based on the wavelength-selective all-optical switch of surface plasmon polaritons, and the highest extinction ratio can reach 11.7dB, which has the technical advantage of high extinction ratio compared with other all-optical switches.
第四,本发明基于表面等离子体激元的波长选择全光开关,由于其结构简单、波长可选择、高消光比,因此未来可以应用于大规模集成光通信器件中。Fourth, the wavelength-selective all-optical switch based on the surface plasmon polariton of the present invention can be applied to large-scale integrated optical communication devices in the future due to its simple structure, selectable wavelength and high extinction ratio.
附图说明Description of drawings
图1为本发明基于表面等离子体激元的波长选择全光开关的结构示意图。FIG. 1 is a schematic structural diagram of a wavelength selective all-optical switch based on surface plasmon polaritons according to the present invention.
图2为第二直波导与等边三角形谐振腔距离d2变化时的透射率曲线。FIG. 2 is a transmittance curve when the distance d 2 between the second straight waveguide and the equilateral triangular resonator varies.
图3为第四直波导与等边三角形谐振腔距离d4变化时的透射率曲线。FIG. 3 is a transmittance curve when the distance d 4 between the fourth straight waveguide and the equilateral triangular resonator varies.
图4为矩形金属块宽度w变化是的透射率曲线。FIG. 4 is the transmittance curve of the width w of the rectangular metal block.
图5为光信号从不同直波导输入时的透射率曲线。Fig. 5 is the transmittance curve when the optical signal is input from different straight waveguides.
图中:1基底层、2矩形金属层、3第一直波导、4第二直波导、5第三直波导、6第四直波导、7等边三角形谐振腔、8矩形金属块。In the figure: 1 base layer, 2 rectangular metal layer, 3 first straight waveguide, 4 second straight waveguide, 5 third straight waveguide, 6 fourth straight waveguide, 7 equilateral triangular resonator, 8 rectangular metal blocks.
具体实施方式Detailed ways
下面结合附图对本发明具体实施方式作进一步详细介绍。The specific embodiments of the present invention will be further described in detail below with reference to the accompanying drawings.
具体实施方式一Specific implementation one
该具体实施方式下的基于表面等离子体激元的波长选择全光开关,结构示意图如图1所示,由基底层1和矩形金属层2组成,所述矩形金属层2紧贴于基底层1上方,在矩形金属层2上刻蚀与矩形金属层2等高的第一直波导3、第二直波导4、第三直波导5、第四直波导6和等边三角形谐振腔7,其中,第二直波导4和第四直波导6与矩形金属层2长边方向相同,第一直波导3和第三直波导5与矩形金属层2长边方向的夹角均为60°(图1中的α和β均为60°);在等边三角形谐振腔7内,还设置有与矩形金属层2等高且中心与等边三角形谐振腔7内心重合的矩形金属块8。The wavelength-selective all-optical switch based on surface plasmon in this specific embodiment has a schematic structural diagram as shown in FIG. Above, the first
具体实施方式二Specific embodiment two
该具体实施方式下的基于表面等离子体激元的波长选择全光开关,在具体实施方式一的基础上,进一步限定:The wavelength-selective all-optical switch based on surface plasmon in this specific embodiment is further defined on the basis of the specific embodiment 1:
所述矩形金属层2的尺寸为1160nm×530nm×75nm;The size of the
所述第一直波导3的宽度为50nm,与等边三角形谐振腔7的距离为d1=18nm;The width of the first
所述第二直波导4的宽度为50nm,与等边三角形谐振腔7的距离为d2=20nm~50nm;The width of the second
所述第三直波导5的宽度为50nm,与等边三角形谐振腔7的距离为d3=18nm;The width of the third
所述第四直波导6的宽度为50nm,与等边三角形谐振腔7的距离为d4=10nm~40nm;The width of the fourth straight waveguide 6 is 50 nm, and the distance from the equilateral
所述等边三角形谐振腔7的边长为484nm;The side length of the equilateral
所述矩形金属块8的长h=200nm,宽w=20nm~50nm。The length h=200nm and the width w=20nm˜50nm of the
具体实施方式三Specific embodiment three
该具体实施方式下的基于表面等离子体激元的波长选择全光开关,在具体实施方式一或具体实施方式二的基础上,进一步限定:所述基底层1为二氧化硅材料,所述矩形金属层2和矩形金属块8为银材料,所述第一直波导3、第二直波导4、第三直波导5、第四直波导6和等边三角形谐振腔7与空气连通。The wavelength selective all-optical switch based on surface plasmon in this specific embodiment is further defined on the basis of the specific embodiment 1 or the specific embodiment 2: the base layer 1 is a silicon dioxide material, the rectangular The
具体实施方式四Specific embodiment four
该具体实施方式下的基于表面等离子体激元的波长选择全光开关,对第二直波导4与等边三角形谐振腔7的距离分别为d2进行仿真测试,当距离d2从50nm变化到20nm,透射率曲线情况如图2所示,可以看出,在400nm~700nm范围内,随着d2的减小,两个共振峰的透射率增加,同时出现轻微红移,波形基本保持不变。For the wavelength-selective all-optical switch based on surface plasmon in this specific embodiment, a simulation test is carried out on the distance between the second
具体实施方式五Specific implementation five
该具体实施方式下的基于表面等离子体激元的波长选择全光开关,对第四直波导6与等边三角形谐振腔7的距离分别为d4进行仿真测试,当距离d4从40nm变化到10nm,透射率曲线情况如图3所示,可以看出,在400nm~700nm范围内,随着d4的减小,两个共振峰的透射率增加,同时出现轻微红移,波形基本保持不变。For the wavelength-selective all-optical switch based on surface plasmon in this specific embodiment, a simulation test is performed on the distance between the fourth straight waveguide 6 and the equilateral
具体实施方式六Specific embodiment six
该具体实施方式下的基于表面等离子体激元的波长选择全光开关,对矩形金属块8的宽度w进行仿真测试,当宽度w从50nm变化到20nm,透射率曲线情况如图4所示,可以看出,在400nm~700nm范围内,随着w的减小,共振峰1的透射率增加,共振峰2的透射率基本不变,同时出现蓝移,波形基本保持不变。For the wavelength-selective all-optical switch based on surface plasmon in this specific embodiment, the width w of the
具体实施方式七Specific embodiment seven
该具体实施方式下的基于表面等离子体激元的波长选择全光开关,对第一直波导3、第二直波导4、第三直波导5进行光信号输入,组合如下:The wavelength-selective all-optical switch based on surface plasmon in this specific embodiment performs optical signal input to the first
组合一、单独对第二直波导4进行输入;Combination 1. Input the second
组合二、同时对第二直波导4和第一直波导3进行输入;Combination 2: Input the second
组合三、同时对第二直波导4和第三直波导5进行输入;Combination 3: Input the second
组合四、同时对第二直波导4,第一直波导3和第三直波导5进行输入;Combination 4: Input the second
透射率曲线的变化情况如图5所示,可以看出,在400nm~550nm范围内,组合四会使组合一时的对共振峰1的消光比达到4.5dB,组合二、组合三会使组合一的对共振峰2的消光比达到11.7dB,验证了相比于其他全光开关,具有高消光比的技术优势。The change of the transmittance curve is shown in Figure 5. It can be seen that in the range of 400nm to 550nm, the combination of four will make the extinction ratio of the first combination to the resonance peak 1 reach 4.5dB, and the combination of two and three will make the combination of one. The extinction ratio of
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