CN216434337U - Anti-interference magnetic field sensor - Google Patents
Anti-interference magnetic field sensor Download PDFInfo
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- CN216434337U CN216434337U CN202122886100.7U CN202122886100U CN216434337U CN 216434337 U CN216434337 U CN 216434337U CN 202122886100 U CN202122886100 U CN 202122886100U CN 216434337 U CN216434337 U CN 216434337U
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/025—Compensating stray fields
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
Abstract
The utility model relates to an anti-interference magnetic field sensor, anti-interference magnetic field sensor includes: the set reset coil comprises a plurality of mutually parallel conducting wires, and the conducting wires have the same width; at least one magnetic resistance unit, the magnetic resistance unit is arranged above or below the setting and resetting coil, the magnetic resistance unit is provided with an easy magnetization axis and a magnetic sensitivity axis perpendicular to the easy magnetization axis, and the extension direction of the magnetic resistance unit is parallel to the easy magnetization axis; the technical problem that the measuring accuracy of the magnetic field sensor is influenced due to the fact that magnetic fields at two ends of a magnetic resistance unit of the magnetic field sensor are too small and demagnetization is fast in the prior art is solved; the magnetic field intensity at the two ends of the magnetic resistance unit after being excited is increased, the interference of an external magnetic field to the magnetic resistance sensor is effectively reduced, and the detection precision of the magnetic field sensor in a complex environment is improved.
Description
Technical Field
The utility model relates to a magnetic field sensor technical field, in particular to anti-interference magnetic field sensor.
Background
The anisotropic magnetic resistance sensor is a novel sensor based on the magnetic resistance effect, and has the advantages of miniaturization, low noise, high resolution, low power consumption, easy integration and the like. The magnetoresistive unit is usually made of permalloy thin film deposited on a silicon chip, and magnetic field measurement is realized by using a Wheatstone bridge to detect the change of the magnetic resistance, but the limitations of the process technology and the configuration problem of the Wheatstone bridge often cause the bridge bias of the sensor after the sensor is shipped.
In the prior art, the zero offset problem caused by the electric bridge and external changes can be offset from time to time by arranging the set reset coil. The specific method is to inject current into the setting and resetting coil, so that the magnetic domain on the magnetic resistance unit is aligned to the direction of the easy magnetization axis by excitation, and the zero offset of the bridge can be offset in real time by adding the output of setting and resetting.
However, the effect of the set and reset is greatly reduced due to the complex external magnetic field environment, and the two ends of the magnetoresistive unit are most easily affected, mainly because the distribution trend of 'small ends and large middle' of the magnetic field on the surface of the excited magnetoresistive unit exists, and the magnetic field with too small two ends causes the two ends of the magnetoresistive unit to demagnetize very quickly, which affects the measurement accuracy of the magnetic field sensor to a certain extent.
SUMMERY OF THE UTILITY MODEL
In view of the above, it is necessary to provide a magnetic field sensor capable of eliminating external magnetic field interference to improve the measurement accuracy of the magnetic field sensor.
An embodiment of the utility model provides an anti-interference magnetic field sensor, anti-interference magnetic field sensor includes:
the set reset coil comprises a plurality of mutually parallel conducting wires, and the conducting wires have the same width;
the magnetic resistance unit is arranged above or below the set reset coil and provided with an easy magnetization axis and a magnetic sensitivity axis perpendicular to the easy magnetization axis, and the extension direction of the magnetic resistance unit is parallel to the easy magnetization axis;
the magnetoresistive unit comprises a first tip portion, a second tip portion and a uniform portion, wherein the first tip portion and the second tip portion are respectively arranged on two sides of the uniform portion, the width of the first tip portion is gradually increased in a direction close to the uniform portion, and the width of the second tip portion is gradually increased in a direction close to the uniform portion.
In one embodiment, widths of the first and second tip portions of the magnetoresistive unit gradually increase in width in the direction of the easy axis toward the uniform portion until the uniform portion has the same width in the direction of the easy axis as the uniform portion width.
In one embodiment, the length of the first tip portion is greater than or equal to 10% of the length of the magnetoresistive unit;
the length of the second tip portion is greater than or equal to 10% of the length of the magnetoresistive unit.
In one embodiment, the longer the lengths of the first tip portion and the second tip portion, the greater the magnetic field at the surface of the first tip portion and the second tip portion.
In one embodiment, the plurality of wires pass through the same current direction and the same current magnitude.
In one embodiment, the tip angle of the first tip portion is less than or equal to 20 °; the tip angle of the second tip portion is less than or equal to 20 °.
In one embodiment, the direction of current flow through the plurality of wires is parallel to the magnetically susceptible axis.
In one embodiment, the first tip portion and the second tip portion are disposed on opposite sides of the uniform portion in the easy axis direction, and the first tip portion and the second tip portion are axisymmetric along the magnetic sensitivity axis.
In one embodiment, the magnetoresistive elements are of uniform thickness.
In one embodiment, the magnetoresistive elements are made of permalloy.
The utility model provides a pair of anti-interference magnetic field sensor, anti-interference magnetic field sensor includes: the set reset coil comprises a plurality of mutually parallel conducting wires, and the conducting wires have the same width; the magnetic resistance unit is arranged above or below the set reset coil and provided with an easy magnetization axis and a magnetic sensitivity axis perpendicular to the easy magnetization axis, and the extension direction of the magnetic resistance unit is parallel to the easy magnetization axis; the magnetoresistive unit comprises a first tip part, a second tip part and a uniform part, wherein the first tip part and the second tip part are respectively arranged at two sides of the uniform part, the width of the first tip part is gradually increased in the direction close to the uniform part, and the width of the second tip part is gradually increased in the direction close to the uniform part; the technical problem that the measuring accuracy of the magnetic field sensor is influenced due to the fact that magnetic fields at two ends of a magnetic resistance unit of the magnetic field sensor are too small and demagnetization is fast in the prior art is solved; the magnetic field intensity at the two ends of the magnetic resistance unit after being excited is increased, the interference of an external magnetic field to the magnetic resistance sensor is effectively reduced, and the detection precision of the magnetic field sensor in a complex environment is improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention or the conventional technologies, the drawings required to be used in the description of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an anti-interference magnetic field sensor according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of an anti-interference magnetic field sensor according to another embodiment of the present invention;
FIG. 3 is a schematic diagram of a magnetoresistive element of the embodiment shown in FIG. 2;
FIG. 4 is a diagram illustrating the magnetic field distribution of the magnetoresistive elements in the embodiment of FIG. 1 when excited by the set-reset coil current:
fig. 5 is a diagram illustrating the magnetic field distribution of the magnetoresistive elements in the embodiment of fig. 2 when excited by the set-reset coil current.
Detailed Description
In order to make the above objects, features and advantages of the present invention more comprehensible, embodiments of the present invention are described in detail below with reference to the accompanying drawings. In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein, as those skilled in the art will be able to make similar modifications without departing from the spirit and scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and for simplicity of description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," and "fixed" are to be construed broadly and may, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
In the present application, unless expressly stated or limited otherwise, the first feature may be directly on or directly under the second feature or indirectly via intermediate members. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present. The terms "vertical," "horizontal," "upper," "lower," "left," "right," and the like as used herein are for illustrative purposes only and do not denote a unique embodiment.
Referring to fig. 1, an embodiment of the present invention provides an anti-interference magnetic field sensor, including: a set-reset coil 100 and at least one magneto-resistive element 200.
The set-reset coil 100 includes a plurality of conductive lines 110 parallel to each other, and the widths of the plurality of conductive lines 110 parallel to each other are the same. The set-reset coil 100 serves to generate an excitation current to unify the magnetization direction of the surface of the magnetic resistance unit 200.
The magneto-resistive element 200 has a magnetic sensitivity axis 201 and an easy axis 202, the extension direction of the magneto-resistive element 200 is parallel to the easy axis 202, and the magneto-resistive element 200 is disposed above or below the set-reset coil. In the embodiment of the present invention, the plurality of conducting wires 110 in the set-reset coil 100 are parallel to each other and arranged along the easy magnetization axis 202. As shown in fig. 2, the magnetic sensitive axis 201 is an axis extending in the left-right direction of the magnetoresistive unit 200, the easy magnetization axis 202 is an axis extending in the up-down direction of the magnetoresistive unit 200, and the plurality of conductive lines 110 with the same width are parallel to each other and arranged in the left-right direction of fig. 2. When current is injected into the set-reset coil 100, excitation makes the magnetic domain on the magnetoresistive unit 200 align to the direction of the easy magnetization axis 202, and the zero offset of the bridge can be counteracted by adding the outputs of set and reset, so as to eliminate the influence of the external magnetic field on the magnetic field sensor.
In the embodiment of the present invention, the shape and size of the magnetic resistance unit 200 determine the magnetic field strength at both ends of the magnetic resistance unit 200, and the magnetic resistance unit 200 is usually made of permalloy film deposited on a silicon wafer, and the magnetic resistance unit 200 can be regarded as a thin strip-shaped thin sheet with a very thin thickness, so that only the length and width of the magnetic resistance unit 200 need to be considered when studying the shape and size of the magnetic resistance unit 200.
Referring to fig. 3 in combination, the magnetoresistive unit 200 includes a first peak portion 210, a second peak portion 230, and a uniform portion 220, the first peak portion 210 and the second peak portion 230 are respectively disposed at both sides of the uniform portion 220, a width of the first peak portion 210 gradually increases in a direction approaching the uniform portion 220, and a width of the second peak portion 230 gradually increases in a direction approaching the uniform portion 220.
The width of first tip portion 210 refers to the width of first tip portion 210 in the direction of magnetically sensitive axis 201, and the length of first tip portion 210 refers to the length of first tip portion 210 in the direction of magnetically easy axis 202; the width of the second tip portion 230 refers to the width of the second tip portion 230 in the direction of the magnetically sensitive axis 201, and the length of the second tip portion 230 refers to the length of the second tip portion 230 in the direction of the easy axis 202; the width of uniform portion 220 refers to the width of uniform portion 220 in the direction of magnetically sensitive axis 201, and the length of uniform portion 220 refers to the length of uniform portion 220 in the direction of magnetization easy axis 202.
As shown in fig. 3, the widths of the first tip portion 210 and the second tip portion 230 refer to the sizes of the first tip portion 210 and the second tip portion 230 in the up-down direction (the magnetically sensitive axis 201), and the lengths of the first tip portion 210 and the second tip portion 230 refer to the sizes of the first tip portion 210 and the second tip portion 230 in the left-right direction (the magnetically easy axis 202); the length of the uniform portion 220 refers to the dimension of the uniform portion 220 in the left-right direction (magnetization easy axis 202), and the width of the uniform portion 220 refers to the dimension of the uniform portion 220 in the up-down direction (magnetic sensitive axis 201). In fig. 3, the width of the first peak portion 210 gradually increases from left to right, the width of the second peak portion 230 gradually increases from right to left, and the width of the uniform portion 220 does not change from left to right and is uniform.
Further, the first tip portion 210 and the second tip portion 230 are disposed on opposite sides of the uniform portion 220 along the direction of the easy axis 202, and the first tip portion 210 and the second tip portion 230 are axially symmetric along the magnetic sensitivity axis.
Widths of the first and second pointed portions 210 and 230 of the magnetoresistive unit 200 are gradually increased in the direction of the easy axis 202 along the direction of the uniform portion 220 until the width of the uniform portion 220 is the same as the width of the uniform portion 220 in the direction of the easy axis 202.
In one embodiment, with combined reference to FIG. 3, the first tip portion 210 has a first side 211 and a second side 212, and the second tip portion 230 has a third side 231 and a fourth side 232. One end of the first side 211 and one end of the second side 212 are connected to form a tip, and the other ends of the first side 211 and the second side 212 are connected to the uniform part 220. Similarly, one end of the third side 231 of the second tip portion 230 and one end of the fourth side 232 of the second tip portion 230 are connected to form a tip, and the other ends of the third side 231 and the fourth side 232 are connected to the uniforming portion 220. In this view, the lengths of the first and second pointed portions 210 and 230 may also be understood as the distances from the tip to the uniform portion 220 in the direction of the easy axis 202.
In the embodiment of the present invention, according to the magnetic field distribution characteristics of the magnetizing unit 200, the longer the lengths of the first and second tip portions 210 and 230 are, the larger the magnetic field on the surfaces of the first and second tip portions 210 and 230 is. To achieve better results, the length L of the first pointed portion 210 is generally greater than or equal to 10% of the length S of the magneto-resistive element 200, and the length L of the second pointed portion 230 is greater than or equal to 10% of the length S of the magneto-resistive element 200.
For example, in fig. 1, the length L of the first tip portion 210 is less than 10% of the length S of the magneto-resistive element 200, and the length L of the second tip portion 230 is less than 10% of the length S of the magneto-resistive element 200; in fig. 2, the length L of the first pointed portion 210 is greater than 10% of the length S of the magneto-resistive unit 200, and the length L of the second pointed portion 230 is greater than 10% of the length S of the magneto-resistive unit 200. Fig. 4 corresponds to the magnetic field distribution of the magnetoresistive element 200 of fig. 1 under current excitation of the set-reset coil 100, while fig. 5 corresponds to the magnetic field distribution of the magnetoresistive element 200 of fig. 2 under current excitation of the set-reset coil 100. Comparing fig. 4 and fig. 5, it can be seen that the magnetic field strength at both ends of the magnetic resistance unit 200 in fig. 2 is greater than the magnetic field strength at both ends of the magnetic resistance unit 200 in fig. 1, so that the magnetic field sensor using the magnetic resistance unit 200 in fig. 2 has stronger interference resistance and more accurate detection. In addition, the magnetic field intensity of the first and second peak portions 210 and 230 may also be enhanced by setting the peak angle of the first and second peak portions 210 and 230, for example, the peak angle of the first peak portion 210 may be set to be less than or equal to 20 °, and the peak angle of the second peak portion 230 may be set to be less than or equal to 20 ° to enhance the magnetic field intensity of the first and second peak portions 210 and 230. In the embodiment of the present invention, the tip angle is an angle of the first tip portion 210 and the second tip portion 230 away from the sharp corner of the uniform portion 220, that is, an angle of the sharp corner at both ends of the magnetic resistance unit 200. The angle can be set according to actual requirements, and the smaller the angle is, the stronger the magnetic field intensity is.
In the embodiment of the present invention, the length S of the magnetic resistance unit 200 is less than or equal to the total width of the set-reset coil 100, that is, the magnetic resistance unit 200 is disposed in the width range of the set-reset coil 100. In this way, when the set-reset coil 100 generates an excitation current, the magnetization of the magnetoresistive unit 200 by the excitation current makes the magnetic domain directions of the magnetoresistive unit 200 uniform; moreover, under the magnetization effect of the exciting current of the set-reset coil 100, the magnetoresistive units 200 with uniform width of the uniform part 220 can be free from the interference of an external magnetic field, so that the measurement accuracy of the magnetic field sensor is improved, and the zero offset error between the magnetoresistive units 200 is eliminated.
Furthermore, the magnetoresistive elements 200 may generally be elongated sheets supported by a high permeability material such as iron, cobalt, nickel, cofeb or nife, for example, made of permalloy deposited on a silicon wafer. Although the magnetoresistive element 200 is a long thin plate with a small thickness, in order to obtain better effect and improve the measurement accuracy of the magnetic field sensor, the thickness of the magnetoresistive element 200 needs to be uniform, and the overall thickness cannot have too large a deviation.
In the embodiment of the present invention, applying voltage to the input end and the output end of the set-reset coil 100 may form set-reset current in the wire of the set-reset coil 100. The magnitude and direction of the current flowing through the plurality of conductors of the set-reset coil 100 are the same. The current direction of each wire is parallel to the magnetically sensitive axis 201 of the magneto-resistive element 200.
It should be noted that, in the embodiment of the present invention, the total length S of the magnetic resistance unit 200 is fixed, the magnetic field strength at both ends of the magnetic resistance unit 200 can be changed by changing the lengths L of the first pointed end 210 and the second pointed end 230, the magnetic field strength inside the magnetic resistance unit can be improved by the design of pointing and the optimization of the pointed end length, and the interference of the external magnetic field can be reduced. Those skilled in the art can adjust the ratio of the first tip portion 210, the uniform portion 220 and the second tip portion 230 according to actual requirements, and further adjust the magnetic field strength at two ends of the magnetic resistance unit 200, which is not limited herein.
In addition, the set reset coil 100 and the magnetic resistance units 200 are not limited to one group, and in the anti-interference magnetic field sensor provided by the present invention, one set reset coil 100 may correspond to one, two, or even a plurality of magnetic resistance units 200; also can be a plurality of set reset coil 100 correspond a plurality of magnetic resistance unit 200, and specific quantity can be adjusted according to the actual demand, the utility model discloses do not do the restriction here.
To sum up, the utility model provides a pair of anti-interference magnetic field sensor, anti-interference magnetic field sensor includes: the set reset coil comprises a plurality of mutually parallel conducting wires, and the conducting wires have the same width; the magnetic resistance unit is arranged above or below the set reset coil and provided with an easy magnetization axis and a magnetic sensitivity axis perpendicular to the easy magnetization axis, and the extension direction of the magnetic resistance unit is parallel to the easy magnetization axis; the magnetoresistive unit comprises a first tip part, a second tip part and a uniform part, wherein the first tip part and the second tip part are respectively arranged at two sides of the uniform part, the width of the first tip part is gradually increased in the direction close to the uniform part, and the width of the second tip part is gradually increased in the direction close to the uniform part; the technical problem that the measuring accuracy of the magnetic field sensor is influenced due to the fact that magnetic fields at two ends of a magnetic resistance unit of the magnetic field sensor are too small and demagnetization is fast in the prior art is solved; the magnetic field intensity at the two ends of the magnetic resistance unit after being excited is increased, the interference of an external magnetic field to the magnetic resistance sensor is effectively reduced, and the detection precision of the magnetic field sensor in a complex environment is improved.
In addition, by increasing the proportion of the first tip part and the second tip part to the total length of the magnetic field sensor, the magnetic field intensity at two ends of the magnetic resistance unit can be further increased, the interference of an external magnetic field to the magnetic resistance sensor is effectively reduced, and the detection precision of the magnetic field sensor is improved.
In the description herein, references to the description of "some embodiments," "other embodiments," "desired embodiments," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, a schematic description of the above terminology may not necessarily refer to the same embodiment or example.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only represent several embodiments of the present invention, and the description thereof is specific and detailed, but not to be construed as limiting the scope of the invention. It should be noted that, for those skilled in the art, without departing from the spirit of the present invention, several variations and modifications can be made, which are within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the appended claims.
Claims (10)
1. A tamper-resistant magnetic field sensor, comprising:
the set reset coil comprises a plurality of mutually parallel conducting wires, and the conducting wires have the same width;
the magnetic resistance unit is arranged above or below the set reset coil and provided with an easy magnetization axis and a magnetic sensitivity axis perpendicular to the easy magnetization axis, and the extension direction of the magnetic resistance unit is parallel to the easy magnetization axis;
the magnetoresistive unit comprises a first tip portion, a second tip portion and a uniform portion, wherein the first tip portion and the second tip portion are respectively arranged on two sides of the uniform portion, the width of the first tip portion is gradually increased in a direction close to the uniform portion, and the width of the second tip portion is gradually increased in a direction close to the uniform portion.
2. The anti-jamming magnetic field sensor according to claim 1, wherein the widths of the first and second tips of the magnetoresistive unit gradually increase in width in the direction of the easy axis toward the uniform portion until the same as the width of the uniform portion, which is the same in width in the direction of the easy axis.
3. The anti-jamming magnetic field sensor according to claim 1, wherein the length of the first tip portion is greater than or equal to 10% of the length of the magnetoresistive unit;
the length of the second tip portion is greater than or equal to 10% of the length of the magnetoresistive unit.
4. The tamper-resistant magnetic field sensor of claim 3, wherein the longer the length of the first tip portion and the second tip portion, the greater the magnetic field at the surface of the first tip portion and the second tip portion.
5. The anti-jamming magnetic field sensor according to claim 1, wherein the plurality of wires pass currents in the same direction and the same magnitude.
6. The tamper-resistant magnetic field sensor of claim 1, wherein the tip angle of the first tip portion is less than or equal to 20 °;
the tip angle of the second tip portion is less than or equal to 20 °.
7. The tamper-resistant magnetic field sensor of claim 5, wherein the direction of current flow through the plurality of wires is parallel to the magnetically sensitive axis.
8. The anti-jamming magnetic field sensor of claim 1, wherein the first tip portion and the second tip portion are disposed on opposite sides of the uniform portion along the easy axis direction, and the first tip portion and the second tip portion are axisymmetric along the magnetically sensitive axis.
9. The tamper-resistant magnetic field sensor of claim 1, wherein the magnetoresistive elements are of uniform thickness.
10. The tamper-resistant magnetic field sensor of claim 1, wherein the magnetoresistive element is made of permalloy.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122886100.7U CN216434337U (en) | 2021-11-19 | 2021-11-19 | Anti-interference magnetic field sensor |
| PCT/CN2022/114257 WO2023087824A1 (en) | 2021-11-19 | 2022-08-23 | Anti-interference magnetic field sensor |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202122886100.7U CN216434337U (en) | 2021-11-19 | 2021-11-19 | Anti-interference magnetic field sensor |
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| CN216434337U true CN216434337U (en) | 2022-05-03 |
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| CN202122886100.7U Active CN216434337U (en) | 2021-11-19 | 2021-11-19 | Anti-interference magnetic field sensor |
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| WO (1) | WO2023087824A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023087824A1 (en) * | 2021-11-19 | 2023-05-25 | 上海矽睿科技股份有限公司 | Anti-interference magnetic field sensor |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4841398A (en) * | 1987-02-17 | 1989-06-20 | Magnetic Peripherals Inc. | Non linear magnetoresistive sensor |
| JP2003028941A (en) * | 2001-07-17 | 2003-01-29 | Hitachi Metals Ltd | Magnetism-measuring method and magnetometric-sensor drive circuit |
| US6798690B1 (en) * | 2004-01-10 | 2004-09-28 | Honeywell International Inc. | Magnetic switching with expanded hard-axis magnetization volume at magnetoresistive bit ends |
| CN202216701U (en) * | 2011-07-11 | 2012-05-09 | 联创汽车电子有限公司 | Giant magneto-Resistive throttle angular position transducer |
| CN102540113B (en) * | 2011-11-11 | 2014-07-02 | 江苏多维科技有限公司 | Magnetic field sensing device |
| ITTO20130436A1 (en) * | 2013-05-29 | 2014-11-30 | St Microelectronics Srl | INTEGRATED AMR LOW CONSUMPTION MAGNETOR RESISTOR |
| US11187763B2 (en) * | 2016-03-23 | 2021-11-30 | Analog Devices International Unlimited Company | Offset compensation for magnetic field detector |
| JP6969142B2 (en) * | 2017-04-12 | 2021-11-24 | Tdk株式会社 | Magnetic sensor |
| CN208125909U (en) * | 2018-05-14 | 2018-11-20 | 美新半导体（无锡）有限公司 | Magnetic field sensor |
| CN108363025B (en) * | 2018-05-14 | 2023-10-13 | 美新半导体（无锡）有限公司 | magnetic field sensor |
| CN216434337U (en) * | 2021-11-19 | 2022-05-03 | 上海矽睿科技股份有限公司 | Anti-interference magnetic field sensor |
-
2021
- 2021-11-19 CN CN202122886100.7U patent/CN216434337U/en active Active
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- 2022-08-23 WO PCT/CN2022/114257 patent/WO2023087824A1/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023087824A1 (en) * | 2021-11-19 | 2023-05-25 | 上海矽睿科技股份有限公司 | Anti-interference magnetic field sensor |
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