CN208125909U - Magnetic field sensor - Google Patents
Magnetic field sensor Download PDFInfo
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- CN208125909U CN208125909U CN201820705620.9U CN201820705620U CN208125909U CN 208125909 U CN208125909 U CN 208125909U CN 201820705620 U CN201820705620 U CN 201820705620U CN 208125909 U CN208125909 U CN 208125909U
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- conducting wire
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- resistor
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Abstract
The utility model provides a kind of magnetic field sensor comprising：At least one magnetic field sensing cell, with magnetic easy axis and the magnetic susceptibility axis vertical with the magnetic easy axis, the magnetic field sensing cell includes the magneto-resistor item extended along its magnetic easy axis direction；At least one is arranged-resets conducting wire group, the setting-resetting conducting wire group is located above or below corresponding magneto-resistor item, the setting-resetting conducting wire group includes the multiple conducting wires along the lengthwise extending direction parallel arrangement of the corresponding magneto-resistor item, and is less than the width of the conducting wire close to the intermediate region of corresponding magneto-resistor item close to the width of the conducting wire of the corresponding magneto-resistor fringe region.Compared with prior art, the magnetic field sensor of the utility model is arranged-resets coil after being passed through electric current, can generate the very big magnetic field of intensity in magneto-resistor fringe region, the magnetic field of moderate strength is generated in magneto-resistor intermediate region, to effectively be arranged-reset the magnetic moment of magneto-resistor item.
Description
【Technical field】
The utility model relates to magnetic field sensor technical fields, in particular to a kind of to have improved setting-resetting coil
Magnetic field sensor.
【Background technique】
It has been applied very commonly currently based on the magnetic field sensor of magneto-resistance effect, such as anisotropic magnetoresistance
(AMR) magnetic field sensor, giant magnetoresistance (GMR) magnetic field sensor and tunneling magnetic resistance (TMR) magnetic field sensor.In general,
Based on the magnetic field sensor of magneto-resistance effect when magnetic direction and size change, device resistance can be changed correspondingly.Magnetic field sensing
The structure of device generally includes one layer of soft magnetic materials, such as iron, cobalt, nickel, ferro-cobalt boron alloy or dilval (permalloy) etc..
When magnetic direction and size change, the direction of magnetization of layer of soft magnetic material is changed correspondingly, so as to cause the variation of resistance.
After magnetic field sensor is by big magnetic interference, changes will occur for zero point and sensitivity.In order to initialize zero point
And sensitivity, need to apply magnetic field to be arranged-reset the magnetic moment of magneto-resistor item.Due to magneto-resistor fringe region demagnetization field intensity
Very big, how intermediate region demagnetizing field moderate strength generates that fringe region magnetic field strength is very big, intermediate region magnetic field strength is moderate
Magnetic field to effectively be arranged-reset the magnetic moment of magneto-resistor item be always a difficult point.
Therefore need a kind of improved magnetic field sensor to overcome the above problem.
【Utility model content】
One of the purpose of this utility model is to provide a kind of magnetic field sensor, is arranged-resets coil (or setting-weight
Set conducting wire group) after being passed through electric current, the very big magnetic field of intensity can be generated in magneto-resistor fringe region, among magneto-resistor item
Region generates the magnetic field of moderate strength, to effectively be arranged-reset the magnetic moment of magneto-resistor item.
To solve the above-mentioned problems, the utility model provides a kind of magnetic field sensor comprising：At least one magnetic field sensing
Unit, with magnetic easy axis and the magnetic susceptibility axis vertical with the magnetic easy axis, the magnetic field sensing cell includes along its magnetic easy axis
The magneto-resistor item that direction extends；At least one is arranged-resets conducting wire group, and the setting-resetting conducting wire group is located at corresponding magnetoelectricity
Hinder above or below item, the setting-resetting conducting wire group include along the corresponding magneto-resistor item lengthwise extending direction it is flat
The multiple conducting wires of row arrangement, and be less than close to the width of the conducting wire of the corresponding magneto-resistor fringe region close to corresponding
Magneto-resistor item intermediate region the conducting wire width.
Further, when being passed through electric current to the setting-resetting conducting wire group, on the side of the corresponding magneto-resistor item
The magnetic field strength that edge region generates is greater than its magnetic field strength generated in the intermediate region of the corresponding magneto-resistor item.
Further, the sense of current passed through on the multiple conducting wires is identical.
Further, the size of the electric current passed through on the multiple conducting wires is identical.
Further, the magnetic field sensing cell be anisotropic magnetoresistance sensing unit, giant magnetoresistance sensing unit or
Tunneling magnetic resistance sensing unit.
Further, the magnetic field sensing cell further include be formed in it is on the magneto-resistor item and with the magneto-resistor item
At several conducting wire items of predetermined angular being parallel to each other.
Further, the setting-resetting conducting wire group includes along magneto-resistor lengthwise extending direction successively parallel arrangement
First conducting wire, the second conducting wire, privates and privates, wherein the first conducting wire and privates are of same size, and the two is located at
The fringe region of magneto-resistor item；Second conducting wire and privates are of same size, and the two is located at the intermediate region of magneto-resistor item, and
Conductor width of the conductor width of one conducting wire and privates less than the second conducting wire and privates.
Further, the magnetic field sensing cell is four, and the setting-resetting conducting wire group is four groups, four groups of setting-weights
Set conducting wire group conducting wire be connected constitute multiturn be arranged-reset coil, the setting-resetting coil have an input terminal and one it is defeated
Outlet applies predetermined voltage in setting-resetting coil input terminal and output end, and the width of the second conducting wire is the width of the first conducting wire
1.5 times or more of degree.
Further, described set is arranged come reasonable in the demagnetization field distribution of size and/or magneto-resistor item based on magneto-resistor item
The number of conductors that conducting wire group includes is set-resets, so that the multiturn setting-weight being made of multiple settings-resetting conducting wire group
The resistance for setting coil is moderate.
Further, the conducting wire in the setting-resetting conducting wire group and the magnetic susceptibility of corresponding magnetic field sensing cell
Axis is parallel.
Compared with prior art, setting corresponding with magneto-resistor item-resetting conducting wire in the magnetic field sensor of the utility model
Group includes parallel multiple conducting wires, and is less than in magnetic magneto-resistor item close to the width of the conducting wire of the fringe region of magneto-resistor item
Between region conducting wire width so that can be produced in magneto-resistor fringe region after being passed through electric current in setting-resetting coil
The very big magnetic field of raw intensity generates the magnetic field of moderate strength in magneto-resistor intermediate region, thus be effectively arranged-reset magnetoelectricity
Hinder the magnetic moment of item.
【Detailed description of the invention】
It, below will be to required in embodiment description in order to illustrate more clearly of the technical solution of the utility model embodiment
The attached drawing used is briefly described, it should be apparent that, the accompanying drawings in the following description is only some implementations of the utility model
Example, for those of ordinary skill in the art, without any creative labor, can also be according to these attached drawings
Obtain other attached drawings.Wherein：
Fig. 1 is the partial structure diagram of magnetic field sensor in one embodiment in the utility model；
Fig. 2 is the schematic cross-sectional view of the c-c hatching in Fig. 1；
Fig. 3 is the magnetic field that setting-resetting conducting wire group of magnetic field sensor shown in FIG. 1 generates on corresponding magneto-resistor item
The distribution schematic diagram of H.
【Specific embodiment】
To keep the above objects, features, and advantages of the utility model more obvious and easy to understand, with reference to the accompanying drawing and have
Body embodiment is described in further detail the utility model.
" one embodiment " or " embodiment " referred to herein, which refers to, may be included at least one realization side of the utility model
A particular feature, structure, or characteristic in formula." in one embodiment " that different places occur in the present specification not refers both to
The same embodiment, nor the individual or selective embodiment mutually exclusive with other embodiments.Unless stated otherwise,
The word of connection, the expression electric connection for being connected, connecting herein indicates directly or indirectly to be electrical connected, and is electrical connected indirectly
Refer to and is electrical connected via another device or circuit.
Fig. 1 is the partial structure diagram of magnetic field sensor in one embodiment in the utility model；Fig. 2 is along figure
The schematic cross-sectional view of c-c hatching in 1.As illustrated in fig. 1 and 2, the magnetic field sensor includes setting-resetting conducting wire group
110 and magnetic field sensing cell 120, the setting-resetting conducting wire group 110 and magnetic field sensing list 120 are corresponding, and are located at the magnetic field
Above or below sensing unit 120.
The magnetic field sensing cell 120 has magnetic easy axis and the magnetic susceptibility axis vertical with the magnetic easy axis.For the side of introduction
Just, x-axis and the y-axis vertical with x-axis are defined, the magnetic easy axis of the magnetic field sensing cell 120 is parallel with x-axis, the magnetic field sensing
The magnetic susceptibility axis of unit 120 is parallel with y-axis.The magnetic field sensing cell 120 can be single for anisotropic magnetoresistance (AMR) sensing
Member, giant magnetoresistance (GMR) sensing unit or tunneling magnetic resistance (TMR) sensing unit.
In Fig. 1 and embodiment shown in Fig. 2, the magnetic field sensing cell 120 includes extending along its magnetic easy axis direction
Lengthwise magneto-resistor item 122, and the setting-resetting conducting wire group 110 is located at the top of magneto-resistor item 122.In another embodiment
In, the setting-resetting conducting wire group 110 can also be located at the lower section of magneto-resistor item 122.In another embodiment, the magnetic
Field sensing unit 120 further includes being formed in phase on the magneto-resistor item 122 and with the magneto-resistor item 122 at predetermined angular
Mutually several parallel conducting wire items (not shown).The magneto-resistor item 122 can be closed by iron, cobalt, nickel, ferro-cobalt boron alloy or ferronickel
The soft magnetic materials such as gold are made, and the layer where the magneto-resistor item 122 is also referred to as soft magnetosphere or magneto-resistive layer；The conductive bar is by leading
Electric material is made, for example, titanium Ti and copper Cu etc. are made.
The setting-resetting conducting wire group 110 includes leading along more of 122 lengthwise extending direction parallel arrangement of magneto-resistor item
Line, and be less than close to the width of the conducting wire of corresponding 122 fringe region of magneto-resistor item (or end regions) close to corresponding magnetoelectricity
Hinder the width of the conducting wire of 122 intermediate region of item.After being passed through electric current to the setting-resetting conducting wire 110, corresponding described
The magnetic field strength that the fringe region of magneto-resistor item 122 generates is greater than to be generated in the intermediate region of the corresponding magneto-resistor item 122
Magnetic field strength, 122 fringe region intensity of magneto-resistor item is very big, demagnetizing field of intermediate region moderate strength to overcome, to have
Realize setting-resetting magneto-resistor item magnetic moment to effect.
In Fig. 1 and specific embodiment shown in Fig. 2, the setting-resetting conducting wire group 110 includes along magneto-resistor item 122
Lengthwise extending direction (i.e. the magnetic easy axis direction of magnetic field sensor unit 120) it is successively parallel and be intervally arranged the first conducting wire 111,
Second conducting wire 112, privates 113 and privates 114.First conducting wire 111 and privates 114 are of same size, and the two is leaned on
Fringe region (or end regions) close or positioned at magneto-resistor item 122；Second conducting wire 112 and privates 113 are of same size, and two
Person is close to or at the intermediate region of magneto-resistor item 122, and the conductor width of the first conducting wire 111 and privates 114 is less than
The conductor width of two conducting wires 112 and privates 113；First conducting wire 111, the second conducting wire 112, privates 113 and
The size and Orientation for the electric current I that four conducting wires 114 pass through is all the same.In Fig. 1 and specific embodiment shown in Fig. 2, the setting-
The conducting wire reset in conducting wire group 110 is parallel with magnetic susceptibility axis (or magneto-resistor item 122).
First conducting wire 111, the second conducting wire 112, privates 113 and privates 114 can pass through series system
Connection with formed set-reset coil, by being passed through electric current I in the setting-resetting conducting wire group 110, in 122 institute of magneto-resistor item
The magnetic field H parallel with magnetic easy axis is generated in plane, to be arranged-reset the magnetic moment of magneto-resistor item 122.In one embodiment
In, the width of the second conducting wire 112 is 1.5 times or more of the width of the first conducting wire 111.
In one embodiment, the magnetic field sensor includes four groups of settings-resetting conducting wire group 110 and four magnetic field sensings
Unit 120, four magnetic field sensing cells 120 form Wheatstone bridge with induced magnetic field, four groups of settings-resetting conducting wire group 110
Conducting wire be connected constitute multiturn be arranged-reset coil, the setting-resetting coil have an input terminal and an output end, setting
The input terminal and output end for setting-resetting coil apply predetermined voltage to form setting-reset current in coil, wherein described
The resistance that multiturn is arranged-resets coil is moderate (2~4 ohm).
It please refers to shown in Fig. 3, is setting-resetting conducting wire group 110 in Fig. 1 and magnetic field sensor shown in Fig. 2 right
The distribution schematic diagram of the magnetic field H generated on the magneto-resistor item 122 answered.As can be known from Fig. 3, by the setting-resetting conducting wire
It is passed through electric current I in group 110, the very big magnetic field of intensity is generated in 122 fringe region of magneto-resistor item, in 122 middle area of magneto-resistor item
The magnetic field that domain generates moderate strength (is greater than region therebetween in the magnetic field strength that the fringe region of magneto-resistor item 122 generates
The magnetic field strength of generation), thus the demagnetizing field for overcoming 122 fringe region intensity of magneto-resistor item very big, 122 middle area of magneto-resistor item
The demagnetizing field of domain moderate strength has effectively achieved setting-resetting magneto-resistor item magnetic moment.
It should be strongly noted that in the preferred embodiment that Fig. 1 and specific embodiment shown in Fig. 2 are the utility model.
In Fig. 1 and embodiment shown in Fig. 2, the setting-resetting conducting wire group 110 includes the first conducting wire 111, the second conducting wire 112, the
Three wires 113 and privates 114, wherein the first conducting wire 111 and 114 narrower width of privates and equal, the second conducting wire
112 and 113 wider width of privates and equal.In other embodiments, what the setting-resetting conducting wire group 110 included leads
Line number amount may be 2,3,5 ..., and the width of the conducting wire close to corresponding 122 end regions of magneto-resistor item is less than
Close to the width of the conducting wire of corresponding 122 intermediate region of magneto-resistor item, so that the setting-resetting conducting wire 110 is passed through electric current
Afterwards, it is greater than in the magnetic field strength that the fringe region of the corresponding magnetic field sensing cell 120 generates in the corresponding magnetic field
The magnetic field strength that the intermediate region of sensing unit 120 generates.
Since under normal conditions, the size of magneto-resistor item 122 is conducting wire scheduled, that setting-resetting conducting wire group 110 includes
Quantity will have a direct impact on the width of each conducting wire, and conducting wire is narrow will lead to that setting-resetting conducting wire group 110 resistance is excessive, electric current
A series of problems, such as too small, power consumption increases, therefore the demagnetization field distribution of the size based on magneto-resistor item 122 and/or magneto-resistor item 122
The number of conductors that the setting-resetting conducting wire group 110 includes rationally is set, so that be made of setting-resetting conducting wire group 110
Multiturn be arranged-reset coil resistance is moderate and the utility model in a very important inventive point.
In conclusion the setting corresponding with magneto-resistor item 122 being arranged in the utility model-resetting conducting wire group 110 includes
Parallel multiple conducting wires, and be less than close to the width of the conducting wire of 122 fringe region of magneto-resistor item close to 122 middle area of magneto-resistor item
The width of the conducting wire in domain, so that after being passed through electric current in setting-resetting conducting wire group 110, it can be in 122 marginal zone of magneto-resistor item
Domain generates the very big magnetic field of intensity, the magnetic field of moderate strength is generated in 122 intermediate region of magneto-resistor item, to overcome magneto-resistor item
The demagnetizing field of the very big demagnetizing field of 122 fringe region intensity, intermediate region moderate strength, to have effectively achieved setting-weight
Set the magnetic moment of magneto-resistor item.
It should be pointed out that one skilled in the art specific embodiment of the present utility model is done it is any
Change the range of claims all without departing from the utility model.Correspondingly, the scope of the claims of the utility model
It is not limited only to previous embodiment.
Claims (10)
1. a kind of magnetic field sensor, which is characterized in that it includes：
At least one magnetic field sensing cell, with magnetic easy axis and the magnetic susceptibility axis vertical with the magnetic easy axis, the magnetic field is passed
Sense unit includes the magneto-resistor item extended along its magnetic easy axis direction；
At least one is arranged-resets conducting wire group, the setting-resetting conducting wire group be located at corresponding magneto-resistor item top or under
Side, the setting-resetting conducting wire group includes that more of the lengthwise extending direction parallel arrangement along the corresponding magneto-resistor item lead
Line, and be less than in corresponding magneto-resistor item close to the width of the conducting wire of the corresponding magneto-resistor fringe region
Between region the conducting wire width.
2. magnetic field sensor according to claim 1, which is characterized in that
When being passed through electric current to the setting-resetting conducting wire group, generated in the fringe region of the corresponding magneto-resistor item
Magnetic field strength is greater than its magnetic field strength generated in the intermediate region of the corresponding magneto-resistor item.
3. magnetic field sensor according to claim 1, which is characterized in that
The sense of current passed through on the multiple conducting wires is identical.
4. magnetic field sensor according to claim 3, which is characterized in that
The size of the electric current passed through on the multiple conducting wires is identical.
5. magnetic field sensor according to claim 1, which is characterized in that
The magnetic field sensing cell is anisotropic magnetoresistance sensing unit, giant magnetoresistance sensing unit or tunneling magnetic resistance sensing
Unit.
6. magnetic field sensor according to claim 1, which is characterized in that
The magnetic field sensing cell further include be formed in it is on the magneto-resistor item and with the magneto-resistor item at predetermined angular
Several conducting wire items being parallel to each other.
7. magnetic field sensor according to claim 1, which is characterized in that
The setting-resetting conducting wire group includes along magneto-resistor lengthwise extending direction successively the first conducting wire of parallel arrangement, second
Conducting wire, privates and privates, wherein the first conducting wire and privates are of same size, and the two is located at the side of magneto-resistor item
Edge region；Second conducting wire and privates are of same size, and the two is located at the intermediate region of magneto-resistor item, and the first conducting wire and the 4th
Conductor width of the conductor width of conducting wire less than the second conducting wire and privates.
8. magnetic field sensor according to claim 7, which is characterized in that
The magnetic field sensing cell is four, and the setting-resetting conducting wire group is four groups, and four groups of settings-resetting conducting wire group is led
Line be connected constitute multiturn be arranged-reset coil, the setting-resetting coil have an input terminal and an output end, setting-
The input terminal and output end for resetting coil apply predetermined voltage,
The width of second conducting wire is 1.5 times of the width of the first conducting wire or more.
9. magnetic field sensor according to claim 1, which is characterized in that
The demagnetization field distribution of size and/or magneto-resistor item based on magneto-resistor item is rationally arranged the setting-resetting conducting wire group
Including number of conductors so that by multiple settings-multiturn that resetting conducting wire group is constituted is arranged-resistance for resetting coil is fitted
In.
10. magnetic field sensor according to claim 1, which is characterized in that
The conducting wire in the setting-resetting conducting wire group is parallel with the magnetic susceptibility axis of corresponding magnetic field sensing cell.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820705620.9U CN208125909U (en) | 2018-05-14 | 2018-05-14 | Magnetic field sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201820705620.9U CN208125909U (en) | 2018-05-14 | 2018-05-14 | Magnetic field sensor |
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| Publication Number | Publication Date |
|---|---|
| CN208125909U true CN208125909U (en) | 2018-11-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201820705620.9U Active CN208125909U (en) | 2018-05-14 | 2018-05-14 | Magnetic field sensor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108363025A (en) * | 2018-05-14 | 2018-08-03 | 美新半导体（无锡）有限公司 | Magnetic field sensor |
| WO2023087824A1 (en) * | 2021-11-19 | 2023-05-25 | 上海矽睿科技股份有限公司 | Anti-interference magnetic field sensor |
-
2018
- 2018-05-14 CN CN201820705620.9U patent/CN208125909U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108363025A (en) * | 2018-05-14 | 2018-08-03 | 美新半导体（无锡）有限公司 | Magnetic field sensor |
| CN108363025B (en) * | 2018-05-14 | 2023-10-13 | 美新半导体（无锡）有限公司 | magnetic field sensor |
| WO2023087824A1 (en) * | 2021-11-19 | 2023-05-25 | 上海矽睿科技股份有限公司 | Anti-interference magnetic field sensor |
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