CN216427488U - Device special for surface-to-surface annealing of aluminum nitride single crystal template - Google Patents
Device special for surface-to-surface annealing of aluminum nitride single crystal template Download PDFInfo
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- CN216427488U CN216427488U CN202122166313.2U CN202122166313U CN216427488U CN 216427488 U CN216427488 U CN 216427488U CN 202122166313 U CN202122166313 U CN 202122166313U CN 216427488 U CN216427488 U CN 216427488U
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- single crystal
- aluminum nitride
- nitride single
- annealing
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- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 title claims abstract description 43
- 239000013078 crystal Substances 0.000 title claims abstract description 41
- 238000000137 annealing Methods 0.000 title claims abstract description 36
- 238000011068 loading method Methods 0.000 claims abstract description 35
- 238000009423 ventilation Methods 0.000 claims abstract description 24
- 238000000576 coating method Methods 0.000 claims abstract description 10
- 210000004907 gland Anatomy 0.000 claims abstract description 10
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 10
- 239000011248 coating agent Substances 0.000 claims abstract description 9
- 239000007770 graphite material Substances 0.000 claims abstract description 8
- 230000002093 peripheral effect Effects 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract description 10
- 238000000034 method Methods 0.000 abstract description 9
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract description 4
- 238000009826 distribution Methods 0.000 abstract description 4
- 229910002804 graphite Inorganic materials 0.000 abstract description 4
- 239000010439 graphite Substances 0.000 abstract description 4
- 238000002425 crystallisation Methods 0.000 abstract description 3
- 230000008025 crystallization Effects 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 3
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 2
- 230000002035 prolonged effect Effects 0.000 abstract description 2
- 230000000694 effects Effects 0.000 description 5
- 238000013461 design Methods 0.000 description 3
- 230000001954 sterilising effect Effects 0.000 description 3
- 238000004659 sterilization and disinfection Methods 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Abstract
The utility model discloses a device special for surface-to-surface annealing of an aluminum nitride single crystal template, which comprises a loading main body and a gland, wherein the loading main body is made of graphite materials, the loading main body is provided with a concave cavity for placing the aluminum nitride single crystal template, and at least one ventilation structure for communicating the concave cavity with the external space. The ventilation structure is additionally arranged, so that smooth air flow can be ensured during annealing operation, the aluminum nitride single crystal template positioned in the concave cavity is fully contacted with nitrogen in the external environment in the annealing process, the heating uniformity in the annealing process is enhanced, and the aluminum nitride single crystal film template with good uniformity and excellent crystallization quality is finally obtained; meanwhile, the silicon carbide coating is coated on the loading main body and the cover body, on the basis of ensuring high heat conductivity and realizing uniform heat distribution, graphite is prevented from being oxidized at a high temperature state, the service life is prolonged, in addition, the whole structure is simple, the realization is easy, the cost is low, the graphite can be stacked and placed in a stacking mode, the space is saved, and the silicon carbide coating is suitable for large-scale production.
Description
Technical Field
The utility model relates to the technical field of aluminum nitride film templates, in particular to a device special for surface-to-surface annealing of an aluminum nitride single crystal film template.
Background
In 2019, the attention degree of people on sterilization reaches unprecedented height, and compared with the traditional sterilization mercury lamp, a safer and more portable sterilization means reflects unprecedented huge demands.
The birth of the AlGaN-based UVC-LED indicates a brand-new development direction for the field, and a series of fields such as good monochromaticity, high luminous efficiency, portability and the like show great application prospects. Nevertheless, the light emitting efficiency of the AlGaN-based LED still has a larger distance than that of the conventional visible blue LED, and the most important factor is that a large-sized aluminum nitride single crystal substrate with excellent quality is lacked, so that the dislocation defect density of the epitaxial structure is too high. The appearance of the aluminum nitride surface-to-surface annealing technology provides a brand new scheme for solving the bottleneck problem, although the surface-to-surface annealing technology greatly improves the quality of aluminum nitride crystals and can meet the basic requirements of UVC-LEDs, the problems of uneven heat distribution and the like still exist in the high-temperature surface-to-surface annealing process, and therefore, the design of a proper surface-to-surface high-temperature annealing device special for the aluminum nitride single crystal template has great significance to the field, especially large-scale application.
SUMMERY OF THE UTILITY MODEL
In view of the above disadvantages, the present invention provides a device for annealing aluminum nitride single crystal templates with reasonable structure design and improved uniformity of thermal distribution during annealing process. The technical scheme provided by the utility model is as follows:
the device specially used for the surface-to-surface annealing of the aluminum nitride single crystal template comprises a loading main body and a gland, wherein the loading main body is made of graphite materials, a cavity used for placing the aluminum nitride single crystal template is arranged on the loading main body, the gland is pressed on the aluminum nitride single crystal template in the cavity, and at least one ventilation structure enabling the cavity to be communicated with the external space is arranged on the loading main body. The external space refers to a space outside the loading body.
In a preferred embodiment of the present invention, the ventilation structure is formed by a groove or a tube. The plurality of the ventilation structures are symmetrically distributed at the peripheral position of the concave cavity in a circle center mode, one end of each ventilation structure is communicated with the concave cavity, and the other end of each ventilation structure extends to the outer side wall of the loading main body and forms a ventilation opening, so that smooth air flow during annealing operation is guaranteed, and the annealing effect is improved.
In a preferred embodiment of the present invention, the loading body has a square outer contour. The concave cavity is circular in outline so as to be matched with the circular shape of the aluminum nitride single crystal template, and the placing stability is good.
As a preferred scheme of the utility model, the diameter of the concave cavity is 51.5-251.5 mm, the depth is 900-6100 μm, so as to meet the processing requirements of wafer samples with the sizes of 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 7 inches, 8 inches and 12 inches.
As a preferable scheme of the utility model, the bottom surface of the ventilation structure and the bottom surface of the cavity are in the same depth, so that the ventilation effect is good.
In a preferred embodiment of the present invention, the outer surface of the loading body is coated with a silicon carbide coating. The gland is a cover body made of graphite materials, and the outer surface of the cover body is coated with a silicon carbide coating. The silicon carbide coating is coated on the loading main body and the shell, so that the graphite material can be prevented from being oxidized at a high temperature, and the loading main body and the shell have the advantages of high hardness, high flatness, good heat conductivity, high uniformity and excellent heat stability in a high-temperature nitrogen environment.
In a preferred embodiment of the present invention, the bottom surface of the loading body is a flat surface, and the top surface of the pressing cover is a flat surface. So that a plurality of the devices of the utility model can be stacked and placed conveniently to save space.
The utility model has the beneficial effects that: the aluminum nitride single crystal film template has reasonable structural design, and the ventilation structure is additionally arranged, so that smooth air flow can be ensured during annealing operation, the aluminum nitride single crystal template positioned in the concave cavity is fully contacted with nitrogen in the external environment in the annealing process, the heating uniformity of the aluminum nitride single crystal template in the annealing process is enhanced, and the aluminum nitride single crystal film template with good uniformity and excellent crystallization quality is finally obtained; meanwhile, the silicon carbide coating is coated on the loading main body and the cover body, on the basis of ensuring high heat conductivity and realizing uniform heat distribution, graphite is prevented from being oxidized at a high temperature state, the service life is prolonged, in addition, the whole structure is simple, the realization is easy, the cost is low, the graphite can be stacked and placed in a stacking mode, the space is saved, and the silicon carbide coating is suitable for large-scale production.
The utility model is further described with reference to the following figures and examples.
Drawings
Fig. 1 is a schematic perspective view of the present invention.
Fig. 2 is a schematic cross-sectional structure of the present invention.
Fig. 3 is an exploded view of the present invention.
Detailed Description
Embodiment, referring to fig. 1 to 3, the present embodiment provides an apparatus for surface-to-surface annealing of an aluminum nitride single crystal template, which includes a loading body 1 and a capping cover 2. The loading body 1 and the gland 2 are made of graphite materials, and preferably, the loading body 1 and the shell are coated with silicon carbide coatings, so that the graphite materials can be prevented from being oxidized at a high temperature, and the loading body and the shell have the advantages of high hardness, high flatness, good thermal conductivity, high uniformity and excellent thermal stability in a high-temperature nitrogen environment.
The loading main body 1 is provided with a cavity 11 for placing the aluminum nitride single crystal template 3, in the embodiment, four ventilation structures 12 are symmetrically arranged at the periphery of the cavity 11 in a circle center manner, and the ventilation structures 12 are groove bodies and are directly positioned on the upper surface of the loading main body 1. The bottom surface of the groove body and the bottom surface of the concave cavity 11 are in the same depth, and the ventilation effect is good. One end of the groove body is communicated with the concave cavity 11, the other end of the groove body extends to the outer side wall of the loading main body 1 and forms an air vent, the ventilation effect is good, air flow is smooth when annealing operation can be guaranteed, and the annealing effect is improved. In other embodiments, the ventilation structure 12 may also be a tube embedded in the loading body 1, and then one end of the ventilation structure is communicated with the cavity 11, and the other end of the ventilation structure is communicated with the external space.
In order to meet the processing requirement of a wafer sample with 2-12 inches, the diameter of the concave cavity 11 may be 51.5-251.5 mm, and the depth is 900-6100 μm. Specifically, the diameter and depth of the cavity 11 corresponding to the wafer samples of 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 7 inches, 8 inches and 12 inches are Φ 51.5mm and 900 μm, Φ 76.5mm and 1150 μm, Φ 101.5mm and 1400 μm, Φ 126.5mm and 1500 μm, Φ 151.5mm and 2700 μm, Φ 176.5mm and 3000 μm, Φ 201.5mm and 6100 μm, and Φ 251.5mm and 6100 μm, respectively. The loading main body 1 is a square plate body, the thickness is 5 mm-20 mm, and the side length is 50 mm-250 mm.
In this embodiment, taking the case of applying the 2-inch-sized aluminum nitride single crystal template to the surface-to-surface annealing process as an example, the outer contour of the loading body 1 is preferably square, the four sides are 54.5mm long, and the thickness is 3.95mm. The contour of the concave cavity 11 is circular, the diameter is 51.5mm, the depth is 900 microns, the diameter is 50mm and the thickness is 430 microns which are slightly larger than that of a 2-inch aluminum nitride single crystal template, and the redundant size can prevent the phenomenon of extrusion fragments caused by thermal expansion. The width of the groove body is 10mm, and the depth is 900 μm. The number of the groove bodies is four. The gland 2 is a circular cylinder, the diameter of the circular cylinder is 50mm, and the degree is 10 mm. After the aluminum nitride single crystal template 3 is placed in the cavity 11, the pressing cover 2 is then pressed against the aluminum nitride single crystal template 3 located in the cavity 11. The air flow is smooth during the annealing operation through the groove body, so that the aluminum nitride single crystal template positioned in the concave cavity 11 is in full contact with nitrogen in the external environment in the annealing process, the heating uniformity of the aluminum nitride single crystal template in the annealing process is enhanced, and the aluminum nitride single crystal film template with good uniformity and excellent crystallization quality is finally obtained.
Variations and modifications of the above-described embodiments may also occur to those skilled in the art from the foregoing description. Therefore, the present invention is not limited to the specific embodiments disclosed and described above, and some modifications and variations of the present invention should fall within the scope of the claims of the present invention. Furthermore, although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation. Other devices constructed in the same or similar manner as the above-described embodiments of the present invention are also within the scope of the present invention.
Claims (10)
1. The device special for the surface-to-surface annealing of the aluminum nitride single crystal template is characterized in that: the aluminum nitride single crystal template loading device comprises a loading main body and a gland, wherein the loading main body is made of graphite materials, a concave cavity used for placing an aluminum nitride single crystal template is formed in the loading main body, the gland is pressed on the aluminum nitride single crystal template in the concave cavity, and at least one ventilation structure enabling the concave cavity to be communicated with the external space is formed in the loading main body.
2. The apparatus special for surface-to-surface annealing of aluminum nitride single crystal templates according to claim 1, wherein: the ventilation structure is composed of a groove body or a pipe body.
3. The apparatus special for surface-to-surface annealing of aluminum nitride single crystal templates according to claim 1 or 2, wherein: the plurality of the ventilation structures are symmetrically distributed at the peripheral position of the concave cavity in a circle center manner, one end of each ventilation structure is communicated with the concave cavity, and the other end of each ventilation structure extends to the outer side wall of the loading main body to form a ventilation opening.
4. The apparatus special for surface-to-surface annealing of aluminum nitride single crystal templates according to claim 1, wherein: the outline of the loading main body is square.
5. The apparatus special for surface-to-surface annealing of aluminum nitride single crystal templates according to claim 1 or 4, wherein: the contour of the concave cavity is circular.
6. The apparatus special for surface-to-surface annealing of the aluminum nitride single crystal template according to claim 5, wherein: the diameter of the concave cavity is 51.5-251.5 mm, and the depth is 900-6100 μm.
7. The apparatus special for surface-to-surface annealing of aluminum nitride single crystal templates according to claim 6, wherein: the bottom surface of the vent structure and the bottom surface of the cavity are at the same depth.
8. The apparatus special for surface-to-surface annealing of aluminum nitride single crystal templates according to claim 1, wherein: the outer surface of the loading body is coated with a silicon carbide coating.
9. The apparatus special for surface-to-surface annealing of aluminum nitride single crystal templates according to claim 1, wherein: the gland is a cover body made of graphite materials, and the outer surface of the cover body is coated with a silicon carbide coating.
10. The apparatus special for surface-to-surface annealing of aluminum nitride single crystal templates according to claim 1, wherein: the bottom surface of loading the main part is the planishing face, the top surface of gland is the planishing face.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122166313.2U CN216427488U (en) | 2021-09-08 | 2021-09-08 | Device special for surface-to-surface annealing of aluminum nitride single crystal template |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122166313.2U CN216427488U (en) | 2021-09-08 | 2021-09-08 | Device special for surface-to-surface annealing of aluminum nitride single crystal template |
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| CN216427488U true CN216427488U (en) | 2022-05-03 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117488408A (en) * | 2022-08-02 | 2024-02-02 | 松山湖材料实验室 | Single crystal aluminum nitride material and preparation method thereof |
| CN117488408B (en) * | 2022-08-02 | 2024-05-10 | 松山湖材料实验室 | Single crystal aluminum nitride material and preparation method thereof |
-
2021
- 2021-09-08 CN CN202122166313.2U patent/CN216427488U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117488408A (en) * | 2022-08-02 | 2024-02-02 | 松山湖材料实验室 | Single crystal aluminum nitride material and preparation method thereof |
| CN117488408B (en) * | 2022-08-02 | 2024-05-10 | 松山湖材料实验室 | Single crystal aluminum nitride material and preparation method thereof |
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