CN115142050A - Vacuum adsorption heating plate and device - Google Patents
Vacuum adsorption heating plate and device Download PDFInfo
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- CN115142050A CN115142050A CN202211076041.XA CN202211076041A CN115142050A CN 115142050 A CN115142050 A CN 115142050A CN 202211076041 A CN202211076041 A CN 202211076041A CN 115142050 A CN115142050 A CN 115142050A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
Abstract
The application provides a vacuum adsorption heating plate and a device, wherein an inner ring channel and an outer ring channel corresponding to the center of the same plate surface are arranged on the plate surface of the vacuum adsorption heating plate; the inner ring channel is provided with a plurality of communicating channels which are uniformly distributed between the inner ring channel and the outer ring channel or in the inner ring channel so as to realize the air flow coupling between the inner ring channel and the outer ring channel; the disk surface is also provided with air extraction holes which are distributed in an axisymmetric way; the air exhaust hole is arranged on the communication channel. The application provides a heating plate has the vacuum adsorption function to can carry out even unanimous heating for whole wafer, so that equipment obtains better film forming quality.
Description
Technical Field
The application relates to the technical field of semiconductor equipment, in particular to a vacuum adsorption heating plate and a device.
Background
A heating plate used in chemical vapor deposition equipment utilizes the vacuum adsorption principle to adsorb a wafer on the surface of the heating plate so as to obtain better heat conduction and film forming quality. The structural design of present common heating plate is: set up round vacuum channel and two bleeder vents on the quotation, the bleeder vent sets up respectively in the junction of two passageways that the annular channel was drawn forth, and this kind of heating plate can't realize carrying out even unanimous heating to whole wafer to lead to the film forming quality relatively poor.
Disclosure of Invention
The utility model provides a vacuum adsorption heating plate and device has the vacuum adsorption function to can carry out even unanimous heating for whole wafer, so that equipment obtains better film forming quality.
In a first aspect, an embodiment of the present application provides a vacuum adsorption heating plate, in which an inner ring channel and an outer ring channel corresponding to the center of a same plate surface are arranged on the plate surface of the vacuum adsorption heating plate; the inner ring channel is provided with a plurality of communicating channels which are uniformly distributed between the inner ring channel and the outer ring channel or in the inner ring channel so as to realize the air flow coupling between the inner ring channel and the outer ring channel; the disk surface is also provided with air exhaust holes which are axisymmetrically distributed; the air exhaust hole is arranged on the communication channel.
In an alternative embodiment, the plurality of communication channels includes: a plurality of first communication channels for communicating the inner ring channel and the outer ring channel; the air exhaust hole is arranged on the first communication channel.
In an alternative embodiment, the pumping hole is disposed at an intersection of the first communicating channel and the inner ring channel, at a middle portion of the first communicating channel, or at an intersection of the first communicating channel and the outer ring channel.
In an alternative embodiment, the plurality of communication channels includes: the first communication channel is used for communicating the inner ring channel with the outer ring channel, and the second communication channel is communicated with the inner ring channel; the air suction hole is arranged on the first communication channel or the second communication channel.
In an alternative embodiment, the second communication channel is disposed inside the inner ring channel or between the inner ring channel and the outer ring channel.
In an alternative embodiment, the suction hole is provided at an intersection of the second communicating channel and the inner ring channel, at a middle portion of the second communicating channel, or at an end portion of the second communicating channel.
In an alternative embodiment, when the second communicating channel is disposed inside the inner race channel, the first communicating channel and the second communicating channel are aligned.
In an alternative embodiment, the air suction hole is further arranged on the inner ring channel at a position not intersected with the communication channel.
In an alternative embodiment, the diameter of the outer race channel is between 230 mm and 285 mm; the diameter of the inner ring channel is 40-120 mm in size.
In an alternative embodiment, the diameter of the suction holes is between 1 mm and 3 mm.
In an alternative embodiment, the widths of the inner ring channel, the outer ring channel, the first communicating channel and the second communicating channel are all between 0.5 mm and 1 mm.
In an alternative embodiment, the depth of the inner ring channel, the depth of the outer ring channel, the depth of the first communication channel and the depth of the second communication channel are all between 0.05 mm and 0.1 mm.
In an optional embodiment, the surface roughness of the disc surface, the inner ring channel, the outer ring channel, the first communicating channel and the second communicating channel is less than ra1.0.
In a second aspect, embodiments of the present application further provide a vacuum adsorption heating apparatus, which includes a mounting base and the vacuum adsorption heating plate according to the first aspect; the mounting base adopts a non-liquid cooling base structure; the mounting base is mounted on the direction which is deviated from the disk surface of the vacuum adsorption heating disk and is vertical to the disk surface; an air exhaust channel communicated with an air exhaust hole in the vacuum adsorption heating plate is arranged in the mounting base.
In an optional embodiment, the air exhaust passages correspondingly communicated with the air exhaust holes are in a converging structure at the bottom of the mounting base.
In an alternative embodiment, the bottom of the mounting base is provided with an electrode socket.
In the vacuum adsorption heating plate and the device provided by the embodiment of the application, the plate surface of the vacuum adsorption heating plate is provided with an inner ring channel and an outer ring channel corresponding to the center of the same plate surface; the inner ring channel is provided with a plurality of communicated channels which are uniformly distributed so as to realize the air flow coupling between the inner ring channel and the outer ring channel; the disk surface is also provided with air extraction holes which are distributed in an axisymmetric way; the air exhaust hole is arranged on the communication channel. Through still including in inner circle channel and outer lane trench or inside the inner circle channel, the even symmetrical intercommunication channel that sets up on the inner circle channel to and the axial symmetry's that sets up aspirating hole on the quotation, can realize the vacuum adsorption function to the wafer, and carry out even unanimous heating function to the wafer, thereby obtain better filming quality.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a heating plate provided in the prior art;
fig. 2 is a schematic view of a plate surface structure of a vacuum adsorption heating plate provided in an embodiment of the present application;
fig. 3 is a schematic view of a plate surface structure of another vacuum adsorption heating plate provided in this embodiment of the present application;
fig. 4 is a schematic view of a plate surface structure of another vacuum adsorption heating plate provided in this embodiment of the present application;
fig. 5 is a schematic view of a plate surface structure of another vacuum adsorption heating plate provided in this embodiment of the present application;
fig. 6 is a schematic view of a plate surface structure of another vacuum adsorption heating plate provided in the embodiment of the present application;
fig. 7 is a schematic view of a plate surface structure of another vacuum adsorption heating plate provided in the embodiment of the present application;
fig. 8 is a schematic view of a plate surface structure of another vacuum adsorption heating plate provided in this embodiment of the present application;
fig. 9 is a schematic top view of a vacuum adsorption heating apparatus according to an embodiment of the present disclosure;
fig. 10 is a schematic structural diagram of another vacuum adsorption heating apparatus according to an embodiment of the present application.
Detailed Description
The technical solutions of the present application will be described clearly and completely with reference to the following embodiments, and it should be understood that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
At present, a heating plate commonly used in chemical vapor deposition equipment is shown in fig. 1, a circle of vacuum channels and two air extraction holes are arranged on a plate surface, the air extraction holes are respectively arranged at the intersection of two channels led out from an annular channel, and the heating plate cannot uniformly and consistently heat the whole wafer, so that the film forming quality is poor.
Based on this, this application embodiment provides a vacuum adsorption heating plate and device, has the vacuum adsorption function to can carry out even unanimous heating for whole wafer, so that equipment obtains better filming quality. For the understanding of the present embodiment, a vacuum adsorption heating plate disclosed in the embodiments of the present application will be described in detail first.
The embodiment of the application provides a vacuum adsorption heating plate, and referring to fig. 2, an inner ring channel 11 and an outer ring channel 12 corresponding to the center of the same plate surface are arranged on the plate surface 10 of the vacuum adsorption heating plate; between the inner ring channel 11 and the outer ring channel 12 or in the inner ring channel 11, the inner ring channel 11 is provided with a plurality of communicating channels 13 which are uniformly distributed so as to realize the airflow coupling between the inner ring channel 11 and the outer ring channel 12; the disc surface 10 is also provided with air extraction holes 14 which are distributed in an axisymmetric manner; the suction holes 14 are provided on the communication channel 13.
Through still including in inner circle channel and outer lane trench or inside the inner circle channel, the even symmetrical intercommunication channel that sets up on the inner circle channel to and the axial symmetry's that sets up aspirating hole on the quotation, can realize the vacuum adsorption function to the wafer, and carry out even unanimous heating function to the wafer, thereby obtain better filming quality.
In an alternative embodiment, the plurality of communication channels includes: a plurality of first communication channels 131 for communicating the inner race channel 11 and the outer race channel 12; the suction hole 14 is provided on the first communication channel 131, as shown in fig. 3.
The pumping hole 14 may be formed at an intersection of the first communicating groove and the inner ring groove (as shown in fig. 2), a middle portion of the first communicating groove (as shown in fig. 3), or an intersection of the first communicating groove and the outer ring groove.
In an alternative embodiment, the plurality of communication channels includes: a first communicating channel 131 for communicating the inner race channel 11 and the outer race channel 12, and a second communicating channel 132 communicating with the inner race channel 11; the suction hole 14 is provided on the first communication channel 131 (shown in fig. 4) or the second communication channel 132 (shown in fig. 5).
The second communication channel 132 may be provided inside the inner race channel 11 in addition to being provided between the inner race channel 11 and the outer race channel 12, and the suction hole 14 is provided at an end portion of the second communication channel 132 as shown in fig. 6.
In addition, the air suction hole may be provided at the intersection of the second communicating channel 132 and the inner race channel 11, in the middle of the second communicating channel 132.
In an alternative embodiment, when the second communication channel is disposed inside the inner ring channel, the first communication channel and the second communication channel may be disposed on a straight line, as shown in fig. 7.
In the embodiment of the present application, the second communicating channel 132 extends toward the center of the disk 10 on the same straight line as the first communicating channel 131, but does not extend to the center of the disk, such a channel design can ensure that the air pressure at the center point of the disk is uniformly distributed, thereby improving the heat conductivity between the center point and the wafer. Practice proves that the temperature of the central point of the channel design scheme with the intersection at the center is about 5 degrees lower than that without intersection. Therefore, the arrangement of the air-extracting holes in this embodiment can make the temperature of the center point of the disk surface higher, so as to avoid forming a low temperature well to influence the uniformity of the film-forming thickness of the wafer.
In an alternative embodiment, the suction holes 14 may be provided at positions on the inner ring channel 11 that do not intersect with the communication channel 13, as shown in fig. 8.
In the above-described heating plate structures, the diameter of the inner circumferential channel 11 is preferably as small as possible within an allowable range of 40 to 120 mm.
The number of the air suction holes 14 can be 2, 4, 6 and the like, and the heating plate can be uniformly heated through symmetrical distribution. An air exhaust channel correspondingly communicated with the air exhaust hole 14 is arranged in the direction departing from the disk surface 10 and perpendicular to the disk surface 10, air is exhausted from one end of the hole through the air exhaust channel by using auxiliary equipment, when the wafer is attached to the surface of the heating disk, the pressure of one side, close to the heating disk, of the wafer is low, the pressure of the other side of the wafer is high, and the wafer is firmly adsorbed on the surface of the heating disk by using pressure difference.
For the vacuum adsorption heating plate, the heat transfer between the wafer and the heating plate belongs to gap heat conduction, and the design of the channels determines the heat conduction mode between the heating plate and the wafer, in the embodiment of the application, two circles of channels corresponding to the center of the same plate surface are arranged on the plate surface 10 of the vacuum adsorption heating plate, and each circle of channels comprises an inner circle channel 11 and an outer circle channel 12; between the inner ring channel 11 and the outer ring channel 12 or in the inner ring channel 11, the inner ring channel 11 is provided with a plurality of communicating channels 13 which are uniformly distributed so as to realize the airflow coupling between the inner ring channel 11 and the outer ring channel 12; the disc surface 10 is also provided with air extraction holes 14 which are distributed in an axisymmetric manner; the suction hole 14 is provided on the communication channel 13. Through the structural arrangement, the air flow entering the pumping hole 14 can rapidly circulate to the inner ring channel 11 and the outer ring channel 12 through the first communication channel 131 or simultaneously through the second communication channel 132 and the first communication channel 131, so that the uniform heating of the whole wafer is realized.
In a preferred embodiment, the diameter of the outer ring channel 12 is between 230 mm and 285 mm; the inner race channel 11 has a diameter dimension of between 40 mm and 120 mm.
In a preferred embodiment, the diameter of the suction holes 14 is between 1 mm and 3 mm.
In a preferred embodiment, the widths of the inner ring channel 11, the outer ring channel 12, the communication channel 13 and the second communication channel 15 are all between 0.5 mm and 1 mm.
In a preferred embodiment, the depth of the inner ring channel 11, the outer ring channel 12 and the communication channel 13 is between 0.05 mm and 0.1 mm.
In a preferred embodiment, the surface roughness of the disk surface 10, the inner ring channel 11, the outer ring channel 12 and the communication channel 13 is less than Ra1.0.
According to the vacuum adsorption heating plate provided by the embodiment of the application, two circles of channels corresponding to the center of the same plate surface are arranged on the plate surface 10 of the vacuum adsorption heating plate, and each circle of channel comprises an inner circle channel 11 and an outer circle channel 12; between the inner ring channel 11 and the outer ring channel 12 or in the inner ring channel 11, the inner ring channel 11 is provided with a plurality of communicating channels 13 which are uniformly distributed so as to realize the airflow coupling between the inner ring channel 11 and the outer ring channel 12; the disc surface 10 is also provided with air extraction holes 14 which are distributed in an axisymmetric manner; the suction hole 14 is provided on the communication channel 13. Through the structural arrangement, the air flow entering the pumping hole 14 can rapidly circulate to the inner ring channel 11 and the outer ring channel 12 through the first communication channel 131 or simultaneously through the second communication channel 132 and the first communication channel 131, so that the uniform heating of the whole wafer is realized.
Based on the above embodiments, the present embodiment further provides a vacuum adsorption heating apparatus, which, as shown in fig. 9, includes a mounting base 41 and a vacuum adsorption heating plate 42 as described in the above embodiments; the mounting base 41 adopts a non-liquid cooling base structure; the mounting base 41 is mounted on the direction which is deviated from the disc surface of the vacuum adsorption heating disc 42 and is vertical to the disc surface; the mounting base 41 has built therein an air suction passage 411 communicating with an air suction hole in the vacuum adsorption heating plate 42.
Because be provided with the aspirating hole on the quotation of above-mentioned vacuum adsorption heating plate, its heat dissipation is big than the heat dissipation of general ceramic heating plate, discover in the technology practice, if the mounting base embeds there is liquid cooling structure, the center that can lead to the quotation forms the low temperature well, and then influences wafer film forming thickness homogeneity, consequently, in the embodiment of this application, the mounting base adopts non-liquid cooling base structure, also be inside do not set up liquid cooling structure, and then can avoid the quotation center to form the problem of low temperature well and influence wafer film forming thickness homogeneity that leads to.
In an alternative embodiment, the two air exhaust channels corresponding to and communicated with the two air exhaust holes are in a converging structure at the bottom of the mounting base. As shown in fig. 9, at the bottom of the mounting base 41, a plurality of suction passages are merged (2 suction holes in the present embodiment), and led out by a breather pipe (a pipe protruding from the bottom of the mounting base as shown in fig. 9). The design that has joined has been carried out at mounting base inside to bleed passage, joins at mounting base from 2 bleed passages that ceramic disc face got off, more does benefit to the absorption synchronism of adsorption holes symmetrical area like this, and compact structure is convenient for install and maintain simultaneously.
As shown in fig. 10, an electrode socket 412 is provided on the bottom of the mounting base 41 to facilitate the power supply of the vacuum adsorption heating apparatus.
The device provided by the embodiment of the present application, which has the same implementation principle and the same technical effect as those of the aforementioned heating plate embodiment, for the sake of brief description, no mention is made in the embodiment of the device, and reference may be made to the corresponding contents in the aforementioned heating plate embodiment.
The functions, if implemented in the form of software functional units and sold or used as a stand-alone product, may be stored in a non-volatile computer-readable storage medium executable by a processor. Based on such understanding, the technical solutions of the present application or portions thereof that substantially contribute to the prior art may be embodied in the form of a software product, which is stored in a storage medium and includes several instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the methods described in the embodiments of the present application. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, and other various media capable of storing program codes.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Finally, it should be noted that: the above-mentioned embodiments are only specific embodiments of the present application, and are used to illustrate the technical solutions of the present application, but not to limit the technical solutions, and the scope of the present application is not limited to the above-mentioned embodiments, although the present application is described in detail with reference to the foregoing embodiments, those skilled in the art should understand that: any person skilled in the art can modify or easily conceive the technical solutions described in the foregoing embodiments or equivalent substitutes for some technical features within the technical scope disclosed in the present application; such modifications, changes or substitutions do not depart from the spirit and scope of the exemplary embodiments of the present application, and are intended to be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (16)
1. A vacuum adsorption heating plate is characterized in that an inner ring channel and an outer ring channel corresponding to the center of the same plate surface are arranged on the plate surface of the vacuum adsorption heating plate; the inner ring channel is provided with a plurality of communicated channels which are uniformly distributed between the inner ring channel and the outer ring channel or in the inner ring channel so as to realize the airflow coupling between the inner ring channel and the outer ring channel; the disc surface is also provided with air extraction holes which are distributed in an axisymmetric manner; the air exhaust hole is arranged on the communication channel.
2. The vacuum adsorption heating plate of claim 1, wherein the plurality of communication channels comprise: a plurality of first communicating channels for communicating the inner ring channel and the outer ring channel; the air exhaust hole is arranged on the first communication channel.
3. The vacuum adsorption heating plate of claim 2, wherein the suction hole is provided at an intersection of the first communicating channel and the inner ring channel, at a middle portion of the first communicating channel, or at an intersection of the first communicating channel and the outer ring channel.
4. The vacuum adsorption heating plate of claim 1, wherein the plurality of communication channels comprise: the first communication channel is used for communicating the inner ring channel and the outer ring channel, and the second communication channel is communicated with the inner ring channel; the air exhaust hole is arranged on the first communication channel or the second communication channel.
5. The vacuum adsorption heating disk of claim 4, wherein the second communication channel is provided inside the inner ring channel or between the inner ring channel and the outer ring channel.
6. The vacuum adsorption heating plate of claim 4, wherein the suction hole is provided at an intersection of the second communicating channel and the inner ring channel, a middle portion of the second communicating channel, or an end portion of the second communicating channel.
7. The vacuum adsorption heating plate of claim 5, wherein when the second communication channel is disposed inside the inner ring channel, the first communication channel and the second communication channel are aligned.
8. The vacuum adsorption heating plate of claim 1, wherein the suction holes are further provided on the inner ring channel at positions that do not intersect with the communication channel.
9. The vacuum adsorption heating disk of claim 1, wherein the diameter dimension of the outer ring channel is between 230 mm and 285 mm; the diameter size of the inner ring channel is between 40 mm and 120 mm.
10. The vacuum adsorption heating plate of claim 1, wherein the diameter of the air suction holes is between 1 mm and 3 mm.
11. The vacuum adsorption heating plate of claim 1, wherein the widths of the inner ring channel, the outer ring channel and the communication channel are each between 0.5 mm and 1 mm.
12. The vacuum adsorption heating disk of claim 1, wherein the depth of the inner ring channel, the outer ring channel, and the communication channel are each between 0.05 mm and 0.1 mm.
13. The vacuum adsorption heating plate of claim 1, wherein the surface roughness of the plate face, the inner ring channel, the outer ring channel, and the communication channel are all less than Ra1.0.
14. A vacuum adsorption heating apparatus, characterized in that the apparatus comprises a mounting base and a vacuum adsorption heating plate according to any one of claims 1-13;
the mounting base adopts a non-liquid cooling base structure; the mounting base is mounted on the direction which is deviated from the disk surface of the vacuum adsorption heating disk and is vertical to the disk surface; and an air exhaust channel communicated with an air exhaust hole in the vacuum adsorption heating plate is arranged in the mounting base.
15. The vacuum adsorption heating apparatus of claim 14, wherein the suction passages corresponding to the plurality of suction holes are in a converging structure at the bottom of the mounting base.
16. The vacuum adsorption heating apparatus of claim 14, wherein the bottom of the mounting base is provided with an electrode socket.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211076041.XA CN115142050B (en) | 2022-09-05 | 2022-09-05 | Vacuum adsorption heating plate and device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211076041.XA CN115142050B (en) | 2022-09-05 | 2022-09-05 | Vacuum adsorption heating plate and device |
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| CN115142050A true CN115142050A (en) | 2022-10-04 |
| CN115142050B CN115142050B (en) | 2022-11-25 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116770273A (en) * | 2023-06-28 | 2023-09-19 | 拓荆科技(上海)有限公司 | Base plate heating system and semiconductor device |
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