CN113903699A - Electrostatic chuck and semiconductor processing equipment - Google Patents

Electrostatic chuck and semiconductor processing equipment Download PDF

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Publication number
CN113903699A
CN113903699A CN202111105860.8A CN202111105860A CN113903699A CN 113903699 A CN113903699 A CN 113903699A CN 202111105860 A CN202111105860 A CN 202111105860A CN 113903699 A CN113903699 A CN 113903699A
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air
air passage
passage
communicated
group
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史全宇
叶华
于斌
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Priority to CN202111105860.8A priority Critical patent/CN113903699A/en
Publication of CN113903699A publication Critical patent/CN113903699A/en
Priority to PCT/CN2022/118310 priority patent/WO2023045788A1/en
Priority to KR1020247008077A priority patent/KR20240043796A/en
Priority to TW111134514A priority patent/TWI822325B/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

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  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

The invention provides an electrostatic chuck and semiconductor processing equipment, wherein an air passage structure comprises an annular air passage, a main air passage group and a secondary air passage group, wherein the annular air passage is positioned at the edge close to the upper surface of a chuck body and used for limiting a heat exchange area at the inner side of the annular air passage; the main air passage group surrounds the central air inlet hole, and the secondary air passage group surrounds the main air passage group; the main air channel group is respectively communicated with the central air inlet hole and the secondary air channel group and is set to improve the speed of conveying the back blowing air flowing out of the central air inlet hole to the secondary air channel group; the secondary air passage group is respectively communicated with the main air passage group and the annular air passage and is set to enable back-blown gas to be uniformly distributed at different positions of a heat exchange area. The electrostatic chuck and the semiconductor processing equipment provided by the invention can effectively shorten the ventilation time of back blowing gas on the premise of ensuring that the back blowing gas pressure meets the requirements of stability and uniformity, thereby improving the capacity of the equipment.

Description

Electrostatic chuck and semiconductor processing equipment
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an electrostatic chuck and semiconductor processing equipment.
Background
An Electrostatic Chuck (ESC) is used for supporting a wafer in an Electrostatic adsorption manner, so as to prevent the wafer from moving or dislocating during a process. In the process, back-blowing gas with certain pressure is required to be introduced into a gap between the electrostatic chuck and the wafer for improving the heat transfer capacity of the electrostatic chuck to the wafer and avoiding vacuum heat insulation, so that the control capacity of the electrostatic chuck to the temperature of the wafer can be improved; in addition, the electrostatic chuck may also provide an rf bias to the wafer.
The electrostatic chuck is typically placed in a vacuum chamber, such as a Physical Vapor Deposition (PVD) apparatus, which is in a background vacuum state (background vacuum is typically 10 degrees f) when the wafer is transferred into the vacuum chamber of the PVD apparatus and placed on the electrostatic chuck-8Torr or 10-9On the Torr scale). At this time, the wafer and the electrostatic chuck are in a vacuum heat insulation state, the electrostatic chuck cannot realize temperature control of the wafer, back-blowing gas needs to be introduced into a gap between the wafer and the electrostatic chuck and to be kept at a certain pressure (for example, 1 to 20Torr), and the back-blowing gas can transfer heat between the electrostatic chuck and the wafer, so that the temperature control capability of the electrostatic chuck is realized.
Electrostatic chucks can be classified into coulomb type electrostatic chucks and joule-thobk (J-R type for short), in which the coulomb type electrostatic chucks work on the basis of electrostatic attraction generated between an electrode and a wafer to generate adsorption on the wafer, and J-R type electrostatic chucks work on the basis of electrostatic attraction generated between the upper surface of the electrostatic chuck and the wafer to generate adsorption on the wafer. In order to improve the heat transfer efficiency, air channels are usually arranged on the upper surface of the electrostatic chuck, which is helpful for the back blowing gas to diffuse to different positions of the wafer through the air channels, but the air channels cannot be arranged because the dielectric layer above the electrodes is thinner because the electrodes in the coulomb type electrostatic chuck are closer to the wafer, and the air channels can be manufactured because the dielectric layer above the electrodes is thicker because the electrodes in the J-R type electrostatic chuck are farther from the wafer.
However, for the J-R type electrostatic chuck, the existing air channel structure needs to introduce the back blowing gas for a long time (more than 100 s) to enable the stability and uniformity of the back blowing gas pressure to meet the process requirements, and then the PVD process can be started, and the PVD process generally only takes 20-100s, so that the equipment productivity is low, and the PVD process cannot be applied to industrial production.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides an electrostatic chuck and semiconductor processing equipment, which can effectively shorten the ventilation time of back blowing gas on the premise of ensuring that the back blowing gas pressure meets the requirements of stability and uniformity, thereby improving the equipment capacity.
The electrostatic chuck is applied to semiconductor processing equipment and comprises a chuck body, wherein a convex point structure, a central air inlet hole and an air channel structure are arranged on the upper surface of the chuck body, the convex point structure is positioned in a non-air channel area of the upper surface of the chuck body and is used for bearing a wafer, and a preset distance is reserved between the bearing surface of the convex point structure and the upper surface of the chuck body;
the air channel structure comprises an annular air channel, a main air channel group and a secondary air channel group, wherein the annular air channel is positioned at the edge of the upper surface of the chuck body and used for limiting a heat exchange area on the inner side of the annular air channel; the main air channel group and the secondary air channel group are distributed in the heat exchange area, the main air channel group surrounds the central air inlet hole, and the secondary air channel group surrounds the main air channel group;
the main air channel group is respectively communicated with the central air inlet hole and the secondary air channel group and is set to improve the speed of conveying the back blowing air flowing out of the central air inlet hole to the secondary air channel group;
the secondary air passage group is respectively communicated with the main air passage group and the annular air passage and is set to enable the back blowing gas to be uniformly distributed at different positions of the heat exchange area.
Optionally, a ratio of an orthographic projection area of the main air passage group on the upper surface of the chuck body to a designated area of the upper surface of the chuck body is less than or equal to 50%, and the designated area is a circle area with a center of the upper surface as a center and a diameter as a designated diameter.
Optionally, the specified diameter is 50 mm.
Optionally, the main air duct group includes a plurality of main air ducts uniformly distributed around the circumference of the central air inlet, each main air duct is arranged along the radial direction of the central air inlet, an air inlet end of each main air duct is communicated with the central air inlet, and an air outlet end of each main air duct is communicated with the secondary air duct group.
Optionally, the width of the main air passage is greater than or equal to 0.5mm and less than or equal to 3 mm; the depth of the main air passage is more than or equal to 0.1mm and less than or equal to 0.4 mm; the number of the main air passages is more than or equal to 9 and less than or equal to 20.
Optionally, the secondary air passage group includes a primary air passage sub-group, the secondary air passage sub-group includes a plurality of secondary air passages, the air outlet end of each primary air passage is communicated with the air inlet end of at least one secondary air passage, and the plurality of secondary air passages communicated with the same primary air passage extend from the air outlet end of the primary air passage to different directions away from the central air inlet hole; alternatively, the first and second electrodes may be,
the secondary air passage group comprises a plurality of stages of secondary air passage groups which are sequentially surrounded along the direction far away from the central air inlet, each stage of the secondary air passage group comprises a plurality of secondary air passages, the air outlet end of each primary air passage is communicated with the air inlet end of at least one secondary air passage in the stage of the secondary air passage group adjacent to the primary air passage, and the plurality of secondary air passages communicated with the same primary air passage extend from the air outlet end of the primary air passage to different directions far away from the central air inlet; the air outlet end of each secondary air passage of the upstream level is communicated with the air inlet end of at least one secondary air passage of the downstream level adjacent to the air outlet end of the secondary air passage of the upstream level, and a plurality of secondary air passages of the downstream level communicated with the same secondary air passage of the upstream level extend from the air outlet end of the secondary air passage of the upstream level to different directions far away from the central air inlet hole.
Optionally, the width of the secondary air passage is greater than or equal to 0.5mm and less than or equal to 3 mm; the depth of the secondary air passage is more than or equal to 0.1mm and less than or equal to 0.4 mm; the number of the secondary air passages is more than or equal to 9 and less than or equal to 100.
Optionally, the secondary air passage group includes two stages of sub air passage groups, which are a first stage air passage group and a second stage air passage group, respectively, where the first stage air passage group includes a plurality of first secondary air passages, an air outlet end of each primary air passage is communicated with air inlet ends of three of the first secondary air passages, and is communicated with the same main air passage, the middle first secondary air passage is coaxial with the main air passage, and two of the first secondary air passages on two sides are symmetrically distributed with respect to the middle first secondary air passage; the air outlet ends of any two adjacent primary air passages are converged into a first public air outlet end;
the second air passage group comprises a plurality of second air passages, the air outlet end of the middle first air passage is communicated with the air inlet ends of two of the first air passages in three first air passages communicated with the same main air passage, and each first public air outlet end is communicated with the air inlet ends of two of the second air passages; and any two adjacent second air passages communicated with the air outlet end of the first air passage and the air outlet end of the second air passage communicated with the first public air outlet end are converged into a second public air outlet end, and the second public air outlet ends are communicated with the annular air passage.
Optionally, the secondary air passage group further includes a plurality of transition air passages, air inlet ends of the transition air passages are communicated with the second common air outlet ends in a one-to-one correspondence manner, and air outlet ends of the transition air passages are communicated with the annular air passage.
Optionally, the diameter of the annular center line of the annular air passage is greater than or equal to 270mm and less than or equal to 290 mm; the radial width of the annular air passage is more than or equal to 0.5mm and less than or equal to 3 mm; the depth of the annular air passage is more than or equal to 0.1mm and less than or equal to 0.4 mm.
Optionally, the bump structure includes a plurality of bumps uniformly distributed in the non-air channel region, and a ratio of a total orthographic projection area of the plurality of bumps on the upper surface of the chuck body to an area of the upper surface of the chuck body is greater than or equal to 2% and less than or equal to 10%.
Optionally, the preset distance is greater than or equal to 2 μm and less than or equal to 10 μm.
As another technical solution, the present invention further provides a semiconductor processing apparatus, including a process chamber and an electrostatic chuck disposed in the process chamber, wherein the electrostatic chuck is the electrostatic chuck provided by the present invention.
The invention has the following beneficial effects:
the invention provides an electrostatic chuck, which comprises an annular air passage, a main air passage group and a secondary air passage group, wherein the annular air passage is positioned at the edge close to the upper surface of a chuck body and used for defining a heat exchange area at the inner side of the annular air passage so as to ensure that the air pressure in the area is not influenced by the pressure of a chamber and ensure the stability of the air pressure, so that a back blowing gas can normally carry out heat exchange; main air flue group and secondary air flue group all distribute in this heat exchange area, and main air flue group surrounds around central inlet port, be linked together with central inlet port and secondary air flue group respectively, and set up to the speed that can improve the back of the body gas that blows that flows central inlet port and carry to secondary air flue group, thereby can guarantee that back of the body gas that blows can be fast from central inlet port to diffusion all around, secondary air flue group surrounds around above-mentioned main air flue group, be linked together with main air flue group and annular air flue respectively, and set up to can make the back of the body gas that blows distribute evenly in the regional different positions of heat exchange. Above-mentioned main air flue group is to making the back of the body pressure of blowing reach the stability requirement fast and play the primary role, and the secondary air flue group is to making the back of the body gas of blowing reach the homogeneity requirement fast and play the primary role, consequently, through organizing and using with above-mentioned main air flue group and secondary air flue group, can effectively shorten the time of ventilating of the back of the body gas of blowing under the prerequisite that the pressure of guaranteeing to blow back reaches stability and homogeneity requirement to can improve equipment productivity.
According to the semiconductor processing equipment provided by the invention, by adopting the electrostatic chuck provided by the invention, on the premise of ensuring that the back blowing pressure meets the requirements of stability and uniformity, the ventilation time of back blowing gas can be effectively shortened, so that the capacity of the equipment can be improved.
Drawings
Fig. 1 is a schematic cross-sectional side view of an electrostatic chuck according to a first embodiment of the present invention;
fig. 2 is a top view of an air channel structure of an electrostatic chuck according to a first embodiment of the present invention;
fig. 3 is another top view of the gas channel structure of the electrostatic chuck according to the first embodiment of the present invention;
fig. 4 is a top view of an air channel structure of an electrostatic chuck according to a second embodiment of the present invention;
fig. 5 is an overall plan view of an electrostatic chuck according to a third embodiment of the present invention;
FIG. 6 is a partial top view of the electrostatic chuck of FIG. 5;
FIG. 7 is a graph comparing the average gas pressure versus time for an electrostatic chuck used in accordance with a third embodiment of the present invention and a prior art electrostatic chuck;
fig. 8 is a graph comparing gas pressure versus wafer position for an electrostatic chuck used in a third embodiment of the present invention and a prior art electrostatic chuck.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the electrostatic chuck and the semiconductor processing apparatus provided by the present invention will be described in detail below with reference to the accompanying drawings.
First embodiment
Referring to fig. 1, the present embodiment provides an electrostatic chuck 1, which includes a chuck body 11, wherein an electrode 12 is disposed in the chuck body 11, and the electrode 12 is generally electrically connected to a dc power source for providing power to a wafer to be adsorbed. Generally, the portion of the chuck body 11 above the electrode 12 is a dielectric layer, and the portion below the electrode 12 is a susceptor. The dielectric layer and the base are made of ceramic material, and the electrode 12 can be embedded in the ceramic material in a sintering mode.
The electrostatic chuck 1 provided in this embodiment is a Johnsen-Rahbek effect (J-R type for short) electrostatic chuck, and the working principle thereof is to utilize the electrostatic attraction generated between the upper surface 111 of the chuck body 11 and the wafer 2 to generate an adsorption effect on the wafer 2. Based on this, in the present embodiment, the upper surface 111 of the chuck body 11 is provided with a bump structure, a central air inlet hole and an air channel structure, wherein the bump structure includes a plurality of bumps 13 uniformly distributed in the non-air channel region (except for the central air inlet hole and the air channel structure), a carrying surface formed by the plurality of bumps 13 is used for carrying the wafer 2, and a preset distance (i.e., the height of the bumps 13) is provided between the carrying surface and the upper surface 111 of the chuck body 11, and the preset distance is set to generate a sufficiently large electrostatic attraction force between the upper surface 111 of the chuck body 11 and the wafer 2, so as to ensure that the wafer 2 is prevented from moving or misplacing in the process.
The following formula is a coulomb's law formula:
Figure BDA0003272273640000061
wherein F is electrostatic attraction; k is a coulombic constant, Q is a charge amount of the upper surface 111, Q is a charge amount of the lower surface of the wafer 2, and R is a gap between the lower surface of the wafer 2 and the upper surface 111 of the chuck body 11 (for a J-R type electrostatic chuck).
As can be seen from the coulomb's law equation, the electrostatic attraction F is proportional to the square of the distance r, and therefore, the magnitude of the electrostatic attraction F mainly depends on the magnitude of the distance r, and the smaller the distance r, the larger the electrostatic attraction F. In addition, the electrostatic attractive force F is proportional to the charge amount Q of the upper surface 111, and therefore, the larger the area of the region of the upper surface 111 other than the bump structure and the air passage structure, the larger the electrostatic attractive force F.
Based on the above principle, optionally, the preset distance between the bearing surface formed by the plurality of bumps 13 and the upper surface 111 of the chuck body 11 is greater than or equal to 2 μm and less than or equal to 10 μm. By setting the preset distance within the value range, the electrostatic attraction F is not insufficient due to the overlarge preset distance, and the wafer 2 is prevented from moving or misplacing in the process; and the heat conduction capability of the back blowing gas is not deteriorated due to the molecular mean free path of the back blowing gas introduced between the wafer 2 and the upper surface 111 when the preset distance is smaller than the process, so that the temperature control capability of the electrostatic chuck is not influenced.
Alternatively, the ratio of the total orthographic projection area of the plurality of bumps 13 on the upper surface 111 of the chuck body 11 to the area of the upper surface 111 may be 2% or more and 10% or less. By setting the above-mentioned ratio within this range, it is possible to ensure that the area of the upper surface 111 is not insufficient due to an excessively large ratio, and thus the amount of charge Q of the upper surface 111 is not sufficient, and finally the electrostatic attractive force F is not sufficient, and it is also possible to ensure that the wafer 2 is not uniformly and stably supported due to an excessively small ratio.
In some alternative embodiments, the plurality of bumps 13 may be uniformly arranged on a plurality of circles with different radii and centered at the center of the upper surface 111 in the non-air channel region, such as the arrangement of the plurality of bumps 13 shown in fig. 5. Alternatively, the array may be arranged in a non-airway region, such as a rectangular array or any other arbitrary shape. The number and arrangement of the plurality of bumps 13 are not particularly limited in the present invention.
In some alternative embodiments, the bumps 13 may be made of TAC (hydrogen-free diamond-like film) material using a Filtered Cathode Vacuum Arc (FCVA) method. The salient points manufactured by the method have good wear resistance and can bear high temperature, so that the service life of the electrostatic chuck can be prolonged.
In some alternative embodiments, the spacing between the electrode 11 and the upper surface 111 of the chuck body 11 is 0.5mm or more and 2mm or less, and by setting the spacing within this range, a better electrostatic attractive force F can be obtained.
Referring to fig. 2, the central air inlet hole 112 is located at the center of the upper surface 111 of the chuck body 11 for introducing back-blown gas between the upper surface 111 and the wafer 2 to realize heat exchange therebetween, thereby realizing temperature control of the electrostatic chuck.
Referring to fig. 2, the air duct structure includes an annular air duct 31, a main air duct group and a sub air duct group, wherein the annular air duct 31 is located near an edge of the upper surface 111 of the chuck body 11 and is configured to define the heat exchange region (including an inner ring region 111a and an outer ring region 111b) inside the annular air duct, and since the edge region 111c of the upper surface 111 of the chuck body 11 is communicated with the inside of the chamber, the air pressure in the region may suddenly drop, which results in that the back-blown gas cannot exchange heat in the edge region 111c, in this case, by means of the annular air duct 31, the air pressure in the heat exchange region (including the inner ring region 111a and the outer ring region 111b) inside the annular air duct 31 may be ensured not to be affected by the chamber pressure, thereby ensuring the stability of the air pressure and enabling the back-blown gas to exchange heat normally.
In some alternative embodiments, the diameter of the annular center line of the annular air duct 31 is 270mm or more, 290mm or less, preferably 280 mm; the radial width of the annular air passage 31 is more than or equal to 0.5mm, less than or equal to 3mm, and preferably 2 mm; the depth of the annular air passage 31 is 0.1mm or more and 0.4mm or less, preferably 0.2 mm. The diameter, radial width and depth of the annular central line of the annular air passage 31 can be set within a range which can ensure that the area of the heat exchange area is enlarged as much as possible, and can ensure that the air pressure in the heat exchange area at the inner side of the annular air passage 31 is not influenced by the pressure of the chamber, thereby ensuring the stability of the air pressure and ensuring that the back blowing air can carry out heat exchange normally.
Both the primary and secondary air path groups are distributed in the heat exchange area, with the primary air path group surrounding a central air intake aperture 112, e.g. at the inner circle area 111a in fig. 2; the secondary airway group surrounds the primary airway group, such as at outer circle region 111b in FIG. 2; wherein, main air flue group is linked together with central inlet port 112 and time air flue group respectively, and sets up to the speed that can improve the back of the body that blows that flows central inlet port 112 and carry to time air flue group to can guarantee that the back of the body that blows can be fast from central inlet port 112 to diffusion all around, promptly, improve the diffusion velocity of the back of the body that blows, this main air flue group plays the primary role to making the back of the body pressure of blowing to reach stability requirement fast.
Because the main air channel group is located in the inner ring area 111a close to the center air inlet 112, and the air pressure at the center air inlet 112 is higher than that in other areas, if the orthographic projection area of the main air channel group on the upper surface 111 of the chuck body 11 is too large, the air pressure in the inner ring area 111a is easily caused to be higher, so that the wafer is prone to generate a "bulge" phenomenon in the area. Alternatively, the specified diameter is, for example, 50 mm.
Of course, the area of the orthographic projection on the upper surface 111 of the chuck body 11 is not too small, so as to ensure that the back blowing gas can be diffused from the central air inlet 112 to the periphery quickly, and the back blowing pressure can meet the stability requirement quickly.
In some alternative embodiments, the main air passage set includes a plurality of main air passages 32 uniformly distributed around the circumference of the central air inlet hole 112, and each main air passage 32 is arranged along the radial direction of the central air inlet hole to minimize the path of the back blowing air flowing to the outer ring area 111b, so as to ensure that the back blowing air can be diffused from the central air inlet hole 112 to the periphery at a high speed. Moreover, the air inlet end of each main air passage 32 is communicated with the central air inlet hole 112, and the air outlet end of each main air passage 32 is communicated with the secondary air passage group. The back blowing gas flowing out through the center intake holes 112 is simultaneously diffused all around through the respective main air paths 32 and flows into the sub-air path group.
In some alternative embodiments, the orthographic projection area of the main air passage group on the upper surface 111 of the chuck body 11 can be adjusted by setting parameters such as the number, width, and depth of the main air passages 32, for example, the width of the main air passages 32 is 0.5mm or more and 3mm or less, preferably 2 mm; the depth of the main air passage 32 is 0.1mm or more and 0.4mm or less, preferably 0.2 mm; the number of the main air ducts 32 is 9 or more, and 20 or less, preferably 10. For example, 15 main air ducts 32 are shown in fig. 2. Through the quantity, the width, the degree of depth with main gas duct 32 sets for in above-mentioned numerical range, both can guarantee that main gas duct group can not lead to the atmospheric pressure of the regional 111a of inner circle because too big on the upper surface 111 of chuck body 11 higher, thereby cause the wafer to appear "swell" phenomenon in this region, can guarantee again that the orthographic area on the upper surface 111 of chuck body 11 is enough big, so that the back blown gas can be fast from central inlet port 112 to diffusion all around, thereby realize that the back blown gas pressure reaches the stability requirement fast.
It should be noted that the main air duct group is not limited to the structure adopted in the above embodiment, and in practical application, any other structure may be adopted as long as the back blowing air pressure can quickly meet the stability requirement.
The secondary air duct group is respectively communicated with the main air duct group and the annular air duct 31, and is configured to enable the back blowing gas to be uniformly distributed at different positions of the heat exchange area (including the inner ring area 111a and the outer ring area 111b), that is, the secondary air duct group enables the back blowing gas to be rapidly and uniformly diffused. The secondary air channel group plays a main role in enabling the back blowing gas to quickly reach the uniformity requirement, so that the main air channel group and the secondary air channel group are combined for use, the ventilation time of the back blowing gas can be effectively shortened on the premise that the back blowing pressure is guaranteed to reach the stability and uniformity requirements, and the capacity of equipment can be improved.
It should be noted that, because the distance between the air passage area where the main air passage group and the secondary air passage group are located and the wafer surface is large, and the distance between the non-air passage area of the upper surface 111 and the wafer surface is small, the main air passage group and the secondary air passage group can play a role of guiding the diffusion of the back blowing gas, and both the main air passage group and the secondary air passage group are communicated with the non-air passage area, the back blowing gas can further diffuse to the non-air passage area after flowing along the main air passage group and the secondary air passage group in sequence, and finally the whole heat exchange area is filled with the back blowing gas, so that the air pressure between the heat exchange area and the wafer surface is uniform and stable.
In some alternative embodiments, the secondary air passage group includes a primary air passage group, as shown in fig. 2, the primary air passage group is located in the outer circle region 111b and includes a plurality of secondary air passages 33, the air outlet end of each primary air passage 32 is communicated with the air inlet ends of two secondary air passages 33, and the two secondary air passages 33 communicated with the same primary air passage 32 extend from the air outlet end of the primary air passage 32 to different directions away from the central air inlet 112, for example, the two secondary air passages 33 communicated with the same primary air passage 32 in fig. 2 extend away from the central air inlet 112 and away from each other and finally communicate with the annular air passage 31. Because every two secondary air passages 33 are used as two branches of the main air passage 32, the back blowing air flowing out of the main air passage 32 can be further diffused from the air outlet end of the main air passage 32 to different directions far away from the central air inlet hole 112, so that the effect of enabling the back blowing air to quickly reach the requirement of uniformity can be achieved.
It should be noted that, in practical applications, the number of the secondary air ducts 33 communicating with the same primary air duct 32 may also be 1, in which case, different secondary air ducts 33 may be communicated with each other, which may also play a role in making the back-blowing air rapidly reach the uniformity requirement. Alternatively, the number of the secondary air passages 33 communicating with the same main air passage 32 may be 3 or more, for example, as shown in fig. 3, the number of the secondary air passages 33 communicating with the same main air passage 32 may be 3, and the number may be freely set according to specific needs.
In some alternative embodiments, the width of the secondary air passage 33 is greater than or equal to 0.5mm, and less than or equal to 3mm, preferably 2 mm; the depth of the secondary air passage 33 is 0.1mm or more and 0.4mm or less, preferably 0.2 mm; the number of the secondary air passages 33 is 9 or more, and 100 or less, preferably 20. By setting the width, depth and number of the sub-channels 33 within the above numerical ranges, the back blowing gas can be efficiently brought to the uniformity requirement quickly.
It should be noted that the secondary air duct 33 is not limited to a straight duct, and may be a duct of any other shape, such as a curved duct, a broken duct, and the like, and the present invention is not particularly limited thereto.
Second embodiment
Referring to fig. 4, the electrostatic chuck of the present embodiment is different from the first embodiment only in that: the secondary air passage groups are different in structure, and a plurality of transition air passages 34 are additionally arranged. Only the differences of the present embodiment from the above-described first embodiment will be described in detail below.
Specifically, as shown in fig. 4, on the upper surface 111 of the chuck body 11, an annular transition region 111d is further divided between the outer ring region 111b and the annular air passage 31, on the basis that the secondary air passage group includes a primary sub air passage group, the primary sub air passage group is located in the outer ring region 111b and includes a plurality of secondary air passages 33, an air outlet end of each primary air passage 32 is communicated with air inlet ends of two of the secondary air passages 33, and two secondary air passages 33 communicated with the same primary air passage 32 extend from the air outlet end of the primary air passage 32 to different directions away from the central air inlet 112, for example, two secondary air passages 33 communicated with the same primary air passage 32 in fig. 2 extend away from the central air inlet 112 and away from each other, and air outlet ends of any two adjacent secondary air passages 33 communicated with different primary air passages 32 converge to form a common end a, so as to realize mutual communication between the two secondary air passages 33, thereby further improving the efficiency of the back blowing gas to quickly reach the uniformity requirement.
Moreover, the secondary air passage group further includes a plurality of transition air passages 34, the plurality of transition air passages 34 are located in the annular transition region 111d, the air inlet ends of the transition air passages 34 are communicated with the common air outlet ends a in a one-to-one correspondence manner, and the air outlet ends of the transition air passages 34 are communicated with the annular air passage 31. The plurality of secondary air passages 33 communicating with each other can further communicate with the annular air passage 31 by means of the transition air passage 34.
It should be noted that, in practical applications, the transition air duct 34 may be omitted, that is, the annular transition area 111d is not provided, and the common air outlet a directly extends to the position of the annular air duct 31 and is communicated with the annular air duct.
Other structures and functions of the electrostatic chuck provided in this embodiment are the same as those of the first embodiment, and are not described herein again.
Third embodiment
Referring to fig. 5 and 6, the electrostatic chuck of the present embodiment is different from the first and second embodiments only in that: the secondary airway groups differ in structure. Only the differences between the present embodiment and the first and second embodiments described above will be described in detail.
As shown in fig. 5 and 6, the sub-air passage groups include two stages of sub-air passage groups sequentially surrounding in a direction away from the center air intake hole 112, and are located in the outer circumferential region. The two-stage sub-air passage groups are respectively a first-stage air passage group and a second-stage air passage group, wherein the first-stage air passage group comprises a plurality of first secondary air passages 33a, and the second-stage air passage group comprises a plurality of second secondary air passages 33 b.
Among the three primary air passages which are communicated with the same main air passage 32, the middle primary air passage 331 is coaxial with the main air passage 32, and the two primary air passages 332 on the two sides are symmetrically distributed relative to the middle primary air passage 331; moreover, the air outlets of any two adjacent first air passages 331 are converged into a first common air outlet a 1; of the three primary air passages communicated with the same main air passage 32, the air outlet end of the middle primary air passage 331 is communicated with the air inlet ends of two of the secondary air passages 33b, and each first common air outlet end A1 is communicated with the air inlet ends of two of the secondary air passages 33 b; moreover, the air outlet ends of any two adjacent second air passages 33b communicated with the air outlet end of the first air passage 331 and the second air passage 33b communicated with the first common air outlet end a1 are converged into a second common air outlet end a2, or different air outlet ends (including the air outlet end of the middle first air passage 331 and the first common air outlet end a1) are communicated, the air outlet ends of any two adjacent second air passages 33b are converged into a second common air outlet end a2, and the second common air outlet ends 33b are communicated with the annular air passage 31.
Optionally, the secondary air passage group further includes a plurality of transition air passages 34, the air inlet ends of the transition air passages 34 are communicated with the second common air outlet ends a2 in a one-to-one correspondence manner, and the air outlet ends of the transition air passages 34 are communicated with the annular air passage 31.
In the following experiment, taking the air channel structure adopted by the electrostatic chuck shown in fig. 5 as an example, specific parameters include: the widths of the main air passage 32, the secondary air passage 33, the annular air passage 31 and the transition air passage 34 are all 2 mm; the number of the main air passages 32 is 15; the total number of secondary airways is 60; the diameter of the circular center line of the circular air duct 31 is 280 mm.
Fig. 7 is a graph comparing the average gas pressure versus time for an electrostatic chuck used in a third embodiment of the present invention and a prior art electrostatic chuck. As shown in fig. 7, when the average gas pressure reaches the line B1, the average gas pressure is considered to satisfy the process requirements; when the average gas pressure reaches the B2 line, the stability of the average gas pressure at this point is considered to meet the process requirements, and the PVD process can be started, typically with a value of B1 of 90% of the value of B2. Curve S1 is a plot of average gas pressure versus time for a prior art electrostatic chuck; the curve S2 is a curve of the average gas pressure with respect to time of the electrostatic chuck used in the third embodiment of the present invention, and it can be seen by comparison that the time point t2(100S or more) corresponding to the line B1 on the curve S1 is greater than the time point t1 (about 12S) corresponding to the line B1 on the curve S2, that is, the electrostatic chuck used in the third embodiment of the present invention can reach the lines B1 and B2 faster than the prior art, and thus it can be demonstrated that: the electrostatic chuck provided by the embodiment can effectively shorten the ventilation time of back blowing gas on the premise of ensuring that the back blowing gas pressure meets the stability requirement.
Fig. 8 is a graph comparing gas pressure versus wafer position for an electrostatic chuck used in a third embodiment of the present invention and a prior art electrostatic chuck. As shown in fig. 8, curve S1 is a curve of the prior art electrostatic chuck with respect to gas pressure and wafer position; the curve S2 is a curve of the pressure and the wafer position of the electrostatic chuck according to the third embodiment of the present invention, and it can be seen from the comparison that the pressure in the curve S1 gradually decreases from the center position (150mm) of the wafer to the edge position, and the highest pressure in the center position is 680Pa, the lowest pressure in the edge position is 340Pa, and the uniformity of the pressure is poor. The difference between the gas pressure at the center position (150mm) of the wafer and the gas pressure at the edge position of the curve S2 is small, both around 680Pa, which can prove that: the electrostatic chuck provided by the embodiment can effectively improve the stability of back blowing air pressure.
It should be noted that the third embodiment is only a preferred embodiment, and the present invention is not limited to this, in practical application, the secondary air passage group may further include more than three secondary air passage groups sequentially surrounding along a direction away from the central air inlet 112, in this case, the air outlet end of each primary air passage 32 is communicated with the air inlet end of at least one secondary air passage in the adjacent primary air passage group, and a plurality of secondary air passages communicated with the same primary air passage 32 extend from the air outlet end of the primary air passage 32 to different directions away from the central air inlet 112; the air outlet end of each secondary air passage of the upstream stage is communicated with the air inlet end of at least one secondary air passage of the downstream stage adjacent to the air outlet end of the secondary air passage of the upstream stage, and a plurality of secondary air passages of the downstream stage communicated with the same secondary air passage of the upstream stage extend from the air outlet end of the secondary air passage of the upstream stage to different directions far away from the central air inlet 112.
Other structures and functions of the electrostatic chuck provided in this embodiment are the same as those of the first and second embodiments, and are not described herein again.
In summary, the electrostatic chuck provided in each of the embodiments of the present invention combines the main air channel group and the secondary air channel group, so as to effectively shorten the ventilation time of the back blowing air on the premise of ensuring that the back blowing air pressure meets the requirements of stability and uniformity, thereby improving the equipment productivity.
As another technical solution, an embodiment of the present invention further provides a semiconductor processing apparatus, which includes a process chamber and an electrostatic chuck disposed in the process chamber, and the electrostatic chuck employs the electrostatic chuck provided in each of the above embodiments of the present invention.
According to the semiconductor processing equipment provided by the embodiment of the invention, by adopting the electrostatic chuck provided by the embodiment of the invention, on the premise of ensuring that the back blowing pressure meets the requirements of stability and uniformity, the ventilation time of back blowing gas can be effectively shortened, so that the capacity of the equipment can be improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.

Claims (13)

1. An electrostatic chuck is applied to semiconductor processing equipment and comprises a chuck body and is characterized in that a convex point structure, a central air inlet and an air channel structure are arranged on the upper surface of the chuck body, wherein the convex point structure is located in a non-air channel area of the upper surface of the chuck body and used for bearing a wafer, and a preset distance is reserved between the bearing surface of the convex point structure and the upper surface of the chuck body;
the air channel structure comprises an annular air channel, a main air channel group and a secondary air channel group, wherein the annular air channel is positioned at the edge of the upper surface of the chuck body and used for limiting a heat exchange area on the inner side of the annular air channel; the main air channel group and the secondary air channel group are distributed in the heat exchange area, the main air channel group surrounds the central air inlet hole, and the secondary air channel group surrounds the main air channel group;
the main air channel group is respectively communicated with the central air inlet hole and the secondary air channel group and is set to improve the speed of conveying the back blowing air flowing out of the central air inlet hole to the secondary air channel group;
the secondary air passage group is respectively communicated with the main air passage group and the annular air passage and is set to enable the back blowing gas to be uniformly distributed at different positions of the heat exchange area.
2. The electrostatic chuck of claim 1, wherein a ratio of an orthographic area of the main gas passage group on the upper surface of the chuck body to a specified area of the upper surface of the chuck body, which is a circular area having a specified diameter centered at a center of the upper surface, is 50% or less.
3. The electrostatic chuck of claim 2, wherein said specified diameter is 50 mm.
4. The electrostatic chuck of any one of claims 1 to 3, wherein the main air passage set includes a plurality of main air passages uniformly distributed around the circumference of the central air inlet hole, each main air passage is arranged in a radial direction of the central air inlet hole, an air inlet end of each main air passage is communicated with the central air inlet hole, and an air outlet end of each main air passage is communicated with the secondary air passage set.
5. The electrostatic chuck of claim 4, wherein the main gas passage has a width of 0.5mm or more and 3mm or less; the depth of the main air passage is more than or equal to 0.1mm and less than or equal to 0.4 mm; the number of the main air passages is more than or equal to 9 and less than or equal to 20.
6. The electrostatic chuck of claim 4, wherein the sub-air channel group comprises a first sub-air channel group, the sub-air channel group comprises a plurality of sub-air channels, the air outlet end of each main air channel is communicated with the air inlet end of at least one sub-air channel, and the plurality of sub-air channels communicated with the same main air channel extend from the air outlet end of the main air channel to different directions far away from the central air inlet hole; alternatively, the first and second electrodes may be,
the secondary air passage group comprises a plurality of stages of secondary air passage groups which are sequentially surrounded along the direction far away from the central air inlet, each stage of the secondary air passage group comprises a plurality of secondary air passages, the air outlet end of each primary air passage is communicated with the air inlet end of at least one secondary air passage in the stage of the secondary air passage group adjacent to the primary air passage, and the plurality of secondary air passages communicated with the same primary air passage extend from the air outlet end of the primary air passage to different directions far away from the central air inlet; the air outlet end of each secondary air passage of the upstream level is communicated with the air inlet end of at least one secondary air passage of the downstream level adjacent to the air outlet end of the secondary air passage of the upstream level, and a plurality of secondary air passages of the downstream level communicated with the same secondary air passage of the upstream level extend from the air outlet end of the secondary air passage of the upstream level to different directions far away from the central air inlet hole.
7. The electrostatic chuck of claim 6, wherein the secondary air channel has a width of 0.5mm or more and 3mm or less; the depth of the secondary air passage is more than or equal to 0.1mm and less than or equal to 0.4 mm; the number of the secondary air passages is more than or equal to 9 and less than or equal to 100.
8. The electrostatic chuck of claim 6, wherein the secondary air passage group comprises two stages of the sub air passage groups, namely a first stage air passage group and a second stage air passage group, wherein the first stage air passage group comprises a plurality of first secondary air passages, the air outlet end of each primary air passage is communicated with the air inlet ends of three of the first air passages, and the three primary air passages communicated with the same primary air passage, the middle primary air passage is coaxial with the primary air passage, and the two primary air passages on two sides are symmetrically distributed relative to the middle primary air passage; the air outlet ends of any two adjacent primary air passages are converged into a first public air outlet end;
the second air passage group comprises a plurality of second air passages, the air outlet end of the middle first air passage is communicated with the air inlet ends of two of the first air passages in three first air passages communicated with the same main air passage, and each first public air outlet end is communicated with the air inlet ends of two of the second air passages; and any two adjacent second air passages communicated with the air outlet end of the first air passage and the air outlet end of the second air passage communicated with the first public air outlet end are converged into a second public air outlet end, and the second public air outlet ends are communicated with the annular air passage.
9. The electrostatic chuck of claim 8, wherein said secondary air channel set further comprises a plurality of transition air channels, an air inlet end of each of said transition air channels is communicated with each of said second common air outlet ends in a one-to-one correspondence, and an air outlet end of each of said transition air channels is communicated with said annular air channel.
10. The electrostatic chuck of any one of claims 1 to 3, wherein a diameter of the annular centerline of the annular gas passage is 270mm or more and 290mm or less; the radial width of the annular air passage is more than or equal to 0.5mm and less than or equal to 3 mm; the depth of the annular air passage is more than or equal to 0.1mm and less than or equal to 0.4 mm.
11. The electrostatic chuck of claim 1, wherein the bump structure comprises a plurality of bumps uniformly distributed in the non-gas channel region, and a ratio of a total orthographic area of the plurality of bumps on the upper surface of the chuck body to an upper surface area of the chuck body is greater than or equal to 2% and less than or equal to 10%.
12. The electrostatic chuck of claim 1 or 11, wherein the predetermined pitch is 2 μm or more and 10 μm or less.
13. A semiconductor processing apparatus comprising a process chamber and an electrostatic chuck disposed in the process chamber, wherein the electrostatic chuck is the electrostatic chuck of any of claims 1-12.
CN202111105860.8A 2021-09-22 2021-09-22 Electrostatic chuck and semiconductor processing equipment Pending CN113903699A (en)

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KR1020247008077A KR20240043796A (en) 2021-09-22 2022-09-13 Electrostatic chucks and semiconductor processing devices
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023045788A1 (en) * 2021-09-22 2023-03-30 北京北方华创微电子装备有限公司 Electrostatic chuck and semiconductor processing apparatus

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5810933A (en) * 1996-02-16 1998-09-22 Novellus Systems, Inc. Wafer cooling device
JP2002170868A (en) * 2000-11-30 2002-06-14 Kyocera Corp Electrostatic chuck
US6506291B2 (en) * 2001-06-14 2003-01-14 Applied Materials, Inc. Substrate support with multilevel heat transfer mechanism
CN100419989C (en) * 2005-12-05 2008-09-17 北京北方微电子基地设备工艺研究中心有限责任公司 Static chuck
CN100388458C (en) * 2005-12-08 2008-05-14 北京北方微电子基地设备工艺研究中心有限责任公司 Electrostatic chuck
CN104835762A (en) * 2015-04-27 2015-08-12 沈阳拓荆科技有限公司 Temperature-controllable heating disc with paper-cut-shaped surface structure
CN110620074A (en) * 2018-06-19 2019-12-27 北京北方华创微电子装备有限公司 Base assembly and reaction chamber
WO2021055763A1 (en) * 2019-09-19 2021-03-25 Applied Materials, Inc. In-situ dc plasma for cleaning pedestal heater
CN113903699A (en) * 2021-09-22 2022-01-07 北京北方华创微电子装备有限公司 Electrostatic chuck and semiconductor processing equipment

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2023045788A1 (en) * 2021-09-22 2023-03-30 北京北方华创微电子装备有限公司 Electrostatic chuck and semiconductor processing apparatus

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