CN201966192U - Static sucker with double contact surfaces - Google Patents
Static sucker with double contact surfaces Download PDFInfo
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- CN201966192U CN201966192U CN2010206363434U CN201020636343U CN201966192U CN 201966192 U CN201966192 U CN 201966192U CN 2010206363434 U CN2010206363434 U CN 2010206363434U CN 201020636343 U CN201020636343 U CN 201020636343U CN 201966192 U CN201966192 U CN 201966192U
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- contact
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- subregions
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Abstract
The utility model relates to a static sucker with double contact surfaces, which is used for generating a static attraction to hold and fix a wafer. The static sucker with the double contact surfaces comprises a pedestal and a dielectric layer at the top of the pedestal; and the wafer is arranged on the dielectric layer. The static sucker with the double contact surfaces is characterized in that the dielectric layer comprises a plurality of subareas which are respectively contacted with the wafer through planes with different roughness degrees or rugged surfaces, therefore, the temperatures of different areas of the wafer can be controlled respectively; the wafer area contacted with the subareas of planes can be radiated rapidly to obtain lower temperature; while the wafer area connected with the subareas of rugged surfaces can obtain higher temperature, therefore, different areas of the wafer can be respectively controlled. As the contact area with the wafer is reduced through the rugged subareas, accumulation of residual static charges is effectively reduced; and the wafer can be more quickly released from the static sucker.
Description
Technical field
The utility model relates to a kind of electrostatic chuck, particularly a kind of electrostatic chuck with two contact-making surfaces.
Background technology
In the manufacture process of semiconductor device,, generally produce the electrostatic force sticking and fix and supporting wafers by electrostatic chuck (Electrostatic chuck is called for short ESC) in order on as the semiconductor wafer of substrate, to carry out PROCESS FOR TREATMENT such as deposit, etching.
Electrostatic chuck comprises pedestal and is arranged on the dielectric layer at pedestal top, and wafer is placed on the dielectric layer.This dielectric layer generally is the ceramic layer of high heat conduction, buries electrode underground and apply DC power supply in dielectric layer, make on the dielectric layer surface and produce polarization charge, and further at the opposite polarization charge of the correspondence position polarization of wafer surface.Thereby Coulomb force or Johnson La Bieke (Johnsen-Rahbek) power by between wafer and dielectric layer, producing, wafer is adsorbed on the electrostatic chuck firmly.
Yet the dielectric layer of existing electrostatic chuck is typically provided with the upper surface of continuous formation and contacts with wafer, though therefore wafer can obtain the control of good heat transfer efficient and even temperature, but when discharging wafer (De-chucking), tend to after the DC power supply that disconnects on the dielectric layer, because the graviational interaction of remaining electrostatic charge makes wafer be difficult to take off from electrostatic chuck.
At the above-mentioned shortcoming that is difficult to discharge wafer, existing also have a kind of electrostatic chuck, and the entire upper surface of its dielectric layer is rough, thereby has reduced the contact area of dielectric layer and wafer, can effectively help wafer to discharge.But relatively less contact surface makes the electrostatic chuck of this kind structure have lower heat transfer efficiency, and on the wafer and the contact point of dielectric layer and the temperature between the noncontact point unbalanced.
As seen the electrostatic chuck made from prior art is to be difficult to satisfy taking into account wafer heat radiation and wafer release request.
The utility model content
The purpose of this utility model provides a kind of electrostatic chuck with two contact-making surfaces, make wafer pass through the electrostatic attraction sticking on electrostatic chuck, by dissimilar contact-making surfaces is set temperature control is carried out in each zone of wafer respectively, can be when helping the wafer heat radiation, the speed that faster wafer discharges.
In order to achieve the above object, the technical solution of the utility model provides a kind of electrostatic chuck with two contact-making surfaces, is used to produce electrostatic attraction and comes sticking and fixed wafer, comprises pedestal and the dielectric layer that is arranged on the pedestal top; Be placed with wafer on the described dielectric layer, described dielectric layer comprises some subregions;
Wherein some described subregions contact with described wafer by the plane that is provided with; Some in addition described subregions are respectively arranged with rough surface and contact with described wafer, make the above some subregion of dielectric layer different with the space between the described wafer.
Comprise a plurality of equally distributed lug bosses or a plurality of equally distributed pit on the rough surface of described some subregions.
Near the roughness on plane on some subregions of described dielectric layer center, greater than roughness near plane on some subregions of its marginal position.
Some subregions of described dielectric layer comprise inboard subregion and the outside subregion that concentric is provided with;
Described inboard subregion is arranged in the middle of the described dielectric layer, contacts with the center of described wafer;
Described outside subregion contacts with the marginal position of described wafer around described inboard subregion setting.
The surface that the inboard subregion of described dielectric layer contacts with wafer is provided with a plurality of equally distributed lug bosses.
The surface that the inboard subregion of described dielectric layer contacts with wafer is provided with a plurality of equally distributed pits.
The outside subregion of described dielectric layer contacts with wafer by the plane.
The height of the lug boss on the some subregions of described dielectric layer is 0.3～0.8 μ m.
The degree of depth of the pit on the some subregions of described dielectric layer is 0.3～0.8 μ m.
Described dielectric layer is the ceramic layer of heat conduction.
Be provided with some electrodes in the described dielectric layer; Described some electrodes are connected with DC power supply, form electrostatic attraction and come sticking and fixed wafer between described dielectric layer and described wafer.
Some subregions of corresponding described dielectric layer are respectively arranged with some cooling pipes in the described pedestal; Described cooling pipe comprises helium passages, and it passes to space between described wafer and the described dielectric layer with helium.
The electrostatic chuck that the utility model provides with two contact-making surfaces, compared with prior art, its advantage is: the utility model contacts also retaining wafer because dielectric layer is provided with the subregion of some different surfaces, can distinguish the heat radiation and the release of control wafer zones of different.
The utility model is owing to have the surface of a plurality of lug bosses or pit in some subregion settings of dielectric layer, and reduced the area that contacts with wafer by those rough subregion surfaces, effectively reduced remaining accumulation of electrostatic charge, wafer is discharged from electrostatic chuck quickly.
The utility model is owing to the contact surface that the plane is set at some subregions of dielectric layer, and the subregion surface bigger by this coefficient of heat conduction contacts with wafer, can help wafer to lower the temperature apace.Can also make above-mentioned plane have different roughness, with the space between further adjustment wafer and the dielectric layer.
The utility model is owing to be incorporated into plane and rough subregion surface on the dielectric layer of same electrostatic chuck, can obtain lower temperature at the wafer area that contacts with the plane subregion, and obtain higher temperature at the wafer area that contacts with the subregion of convex-concave surface, therefore can control respectively the temperature of wafer zones of different.
Therefore the utility model can obtain better radiating effect at the plane subregion, can obtain higher chip temperature and good wafer releasing effect again on concavo-convex subregion, accomplishes taking into account wafer heat radiation and wafer release request on same electrostatic chuck.
Description of drawings
Fig. 1 is the structure vertical view of electrostatic chuck in embodiment 1 that the utlity model has two contact-making surfaces;
Fig. 2 be the utlity model has two contact-making surfaces electrostatic chuck in Fig. 1 A-A ' to the structure cutaway view;
Fig. 3 is the structure vertical view of electrostatic chuck in embodiment 2 that the utlity model has two contact-making surfaces;
Fig. 4 be the utlity model has two contact-making surfaces electrostatic chuck in Fig. 3 B-B ' to the structure cutaway view;
Fig. 5 is the structure vertical view of electrostatic chuck in embodiment 3 that the utlity model has two contact-making surfaces.
Embodiment
Below in conjunction with description of drawings embodiment of the present utility model.
Embodiment 1
Please cooperate referring to illustrated in figures 1 and 2, the electrostatic chuck with two contact-making surfaces that relates in the present embodiment as shown in Figure 2, specifically comprises pedestal 10 and the dielectric layer 20 that is arranged on pedestal 10 tops.Wafer 30 is placed on the dielectric layer 20, produces electrostatic attraction between dielectric layer 20 and wafer 30, and pedestal 10 is fixed and supporting wafers 30 by dielectric layer 20 stickings.
Thus, subregion area by plane contact in dielectric layer 20 and upper surface that wafer contacts reduces, can effectively avoid impurity such as particulate corrosion that in etch process, produces or the problem that is deposited on this dielectric layer 20 to take place, thereby also be provided with rough surface at other subregions of dielectric layer 20 and contact with wafer 30, with of sticking or the release of further control electrostatic chuck to wafer 30.Hereinafter will the above-mentioned subregion of different roughness be described in detail.
Also be provided with some cooling pipes 11 in the pedestal 10, it links to each other with helium passages (not shown) in being arranged at pedestal, described helium passages is used for the helium feeding wafer 30 of pressurization and the space 40 between the electrostatic chuck, then helium from wafer 30 back sides with heat transferred to electrostatic chuck, realize cooling to wafer 30.
Preferably, it will be appreciated by those skilled in the art that according to the processing procedure requirement, some subregions in can corresponding dielectric layer 20 are provided with this helium passages respectively, by regulating the wherein flow velocity of helium respectively, control the temperature of some subregions, thus the temperature of zones of different on the further control wafer 30.
As some subregions of this dielectric layer 20 in the present embodiment be the inboard subregion 22 that is provided with of concentric and outside subregion 23(as shown in Figure 1), wherein inboard subregion 22 is arranged on dielectric layer 20 zone lines, contacts with the center of wafer 30; Outside subregion 23 is provided with around inboard subregion 22, contacts with the marginal position of wafer 30.
At the upper surface of above-mentioned inboard subregion 22 a plurality of equally distributed lug bosses 221 are set and contact with wafer 30 centers, the height of this lug boss 221 is 0.5 μ m especially, and making the space 40 between wafer 30 and the electrostatic chuck highly also is 0.5 μ m(Fig. 2).Contact with wafer 30 by the plane fully than existing dielectric layer 20, by a plurality of lug boss 221 contacts the contact area of inboard subregion 22 with wafer 30 is reduced to less than 1% in the present embodiment, effectively reduce remaining electrostatic charge the gathering of dielectric layer 20 and wafer 30 centers, thereby can help wafer 30 to discharge quickly.
The heat radiation of wafer 30 centers that contact with this inboard subregion 22 mainly realizes that by the above-mentioned type of cooling to wafer 30 back sides feeding helium temperature at wafer 30 centers is by the controls such as helium air pressure that feed.Pass to the helium density uniformity of wafer 30 center back, the temperature of wafer 30 centers is kept in balance.
Because the marginal position of wafer 30 is easy to discharge, thereby still is provided with the plane at above-mentioned outside subregion 23 and comes contact wafer 30, make this outside subregion 23 have the bigger coefficient of heat conduction.Thereby the heat radiation of wafer 30 marginal positions, mainly realize by the heat transmission that contacts with outside subregion 23, can help wafer 30 to lower the temperature quickly.
As seen, by the contact on plane or uneven surface on the dielectric layer 20,30 heat radiations have different performances for wafer.Thereby can utilize the little characteristics of the coefficient of heat conduction of those subregion contact-making surfaces by on some subregions of dielectric layer 20, rough contact surface being set, make wafer 30 positions of corresponding contact have higher temperature with those subregions; At other subregions the contact surface on plane is set, utilizes those subregion contact-making surface radiating efficiency height, on the wafer 30 of correspondence contact, obtain lower temperature, can realize control respectively with this to zones of different temperature on the wafer 30.
Embodiment 2
Please cooperate referring to Fig. 3 and shown in Figure 4, the electrostatic chuck with two contact-making surfaces that relates in the present embodiment is with the structure similar among the embodiment 1, as shown in Figure 4, comprise and be used for supporting wafers 30 and feed the pedestal 10 of helium, the dielectric layer 20 of pedestal 10 top ceramic to its back side.Bury electrode 21 underground in this dielectric layer 20, and apply DC power supply DC, come the wafer 30 on the sticking dielectric layer 20 to form electrostatic attraction.The upper surface that contacts with wafer 30 at dielectric layer 20 is provided with some subregions, and the some of them subregion is provided with rough contact-making surface, and other subregions are provided with the different contact plane of roughness respectively, to obtain the control respectively to heat radiation of wafer 30 zoness of different and release.
In concentric is provided with on the dielectric layer 20 in the present embodiment the inboard subregion 22 and outside subregion 23, outside subregion 23 still is provided with the plane and contacts, and makes wafer 30 marginal positions can faster heat radiation.
Be with difference among the embodiment 1, the upper surface of dielectric layer 20 inboard subregions 22 is formed with a plurality of as cellular equally distributed pit 222(as shown in Figure 3 by punching press or other modes in the present embodiment), the degree of depth of this pit 222 is preferably 0.5 μ m, and the space 40 between promptly described wafer 30 and the electrostatic chuck highly also is 0.5 μ m(Fig. 4).Inboard subregion 22 contacts with the center of wafer 30 by the upper surface that this has a plurality of pits 222, has reduced contact area, thereby has effectively reduced remaining electrostatic charge the gathering of dielectric layer 20 and wafer 30 centers, and makes things convenient for the rapid release of wafer 30.
Embodiment 3
The electrostatic chuck with two contact-making surfaces that relates in the present embodiment with the structure similar among the embodiment 1,2, comprises and is used for supporting wafers 30 and feeds the pedestal 10 of helium, the dielectric layer 20 of pedestal 10 top ceramic to its back side.In dielectric layer 20, bury electrode 21 underground, and apply DC power supply DC, come the wafer 30 on the sticking dielectric layer 20 to form electrostatic attraction.
Be that with the foregoing description difference as shown in Figure 5, some subregions on the dielectric layer 20 in the present embodiment are four subregions that concentric is provided with, and outwards are made as first to the 4th subregion respectively by the center of circle.This first to the 4th subregion can be provided with the plane respectively or rough surface contacts with wafer 30, to obtain heat radiation of wafer 30 zoness of different and the control respectively that discharges.
For example the second, the 4th subregion can select to be provided with the plane with identical or different roughness, for example makes the plane roughness Ra of second subregion〉1.0 μ m, greater than the plane roughness Ra＜1.0 μ m of the 4th subregion.
And the first and the 3rd subregion is set to convex-concave surface, as make the first subregion surface contain pit 222, the 3rd subregion surface contains lug boss 221; Perhaps make the first, the 3rd subregion surface contain lug boss 221 simultaneously or contain pit 222 simultaneously.
Or as shown in Figure 5, comprise the upper surface of lug boss 221 in the first subregion setting of circle centre position, and comprise the upper surface of pit 222 in the 3rd subregion setting.Thereby the easier release wafer 30 in wafer 30 zones that contacts with concavo-convex the first, the 3rd subregion, also have mutual different but all be higher than wafer 30 temperature of the second, the 4th subregion simultaneously at first subregion that contains lug boss 221 and the 3rd subregion that contains pit 222.
By that analogy, it is the plane that the first, the 3rd subregion can also be set, and the second, the 4th subregion is a convex-concave surface, to obtain and above-mentioned opposite wafer 30 temperature and wafer 30 releasing effects.
Comprehensive embodiment 1,2,3 is described, the electrostatic chuck that the utility model provides with two contact-making surfaces, plane and rough subregion surface are incorporated on the dielectric layer of same electrostatic chuck, thereby can obtain better radiating effect at the plane subregion, can on concavo-convex subregion, obtain higher chip temperature and good wafer releasing effect again, on same electrostatic chuck, accomplish taking into account wafer heat radiation and wafer release request.
Therefore can be by the subregion of arbitrary shape and quantity be set on the dielectric layer surface, and select the surface plane, that contain lug boss or contain any two kinds (or using above-mentioned three kinds at interval) in the contact surface of pit to contact respectively with wafer, can also make above-mentioned plane have different roughness, with the space between further adjustment wafer and the dielectric layer, thereby on the wafer area corresponding, realize the control respectively that chip temperature and wafer discharge with different dielectric layer subregion.
It will be appreciated that all are arranged to the mode plane, that contain lug boss or contain the pit spacer structure with the dielectric layer surface should not break away from spirit of the present utility model, and should be encompassed within the scope of the present utility model.In addition, as long as formed on the dielectric layer surface plane, contain lug boss or contain the spacer structure of pit, no matter the shape of projection or pit, density, generation type how, all should not break away from spirit of the present utility model, and should be encompassed within the scope of the present utility model.Can be provided with corresponding to different technology/processing procedures as for its shape, density, generation type, because existing in the prior art mature technique support for simplicity's sake, repeats no more.
Although content of the present utility model has been done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to restriction of the present utility model.After those skilled in the art have read foregoing, for multiple modification of the present utility model with to substitute all will be conspicuous.Therefore, protection range of the present utility model should be limited to the appended claims.
Claims (12)
1. the electrostatic chuck with two contact-making surfaces is used to produce electrostatic attraction and comes sticking and fixed wafer (30), comprises pedestal (10) and is arranged on the dielectric layer (20) at pedestal (10) top; Be placed with wafer (30) on the described dielectric layer (20), it is characterized in that,
Described dielectric layer (20) comprises some subregions;
Wherein some described subregions contact with described wafer (30) by the plane that is provided with; Some in addition described subregions are respectively arranged with rough surface and contact with described wafer (30), make the above some subregion of dielectric layer (20) different with the space between the described wafer (30).
2. the electrostatic chuck with two contact-making surfaces as claimed in claim 1 is characterized in that, comprises a plurality of equally distributed lug bosses (221) or a plurality of equally distributed pit (222) on the rough surface of described some subregions.
3. the electrostatic chuck with two contact-making surfaces as claimed in claim 1 is characterized in that, near the roughness on plane on some subregions of described dielectric layer (20) center, greater than the roughness near plane on some subregions of its marginal position.
4. the electrostatic chuck with two contact-making surfaces as claimed in claim 1 is characterized in that, some subregions of described dielectric layer (20) comprise inboard subregion (22) and the outside subregion (23) that concentric is provided with;
Described inboard subregion (22) is arranged in the middle of the described dielectric layer (20), contacts with the center of described wafer (30);
Described outside subregion (23) is provided with around described inboard subregion (22), contacts with the marginal position of described wafer (30).
5. the electrostatic chuck with two contact-making surfaces as claimed in claim 4 is characterized in that, the surface that the inboard subregion of described dielectric layer (20) (22) contacts with wafer (30) is provided with a plurality of equally distributed lug bosses (221).
6. the electrostatic chuck with two contact-making surfaces as claimed in claim 4 is characterized in that, the surface that the inboard subregion (22) of described dielectric layer (20) contacts with wafer (30) is provided with a plurality of equally distributed pits (222).
7. as claim 5 or 6 described electrostatic chucks, it is characterized in that the outside subregion (23) of described dielectric layer (20) contacts with wafer (30) by the plane with two contact-making surfaces.
8. as claim 2 or 5 described electrostatic chucks, it is characterized in that the span of the height of the lug boss (221) on the some subregions of described dielectric layer (20) is 0.3～0.8 μ m with two contact-making surfaces.
9. as claim 2 or 6 described electrostatic chucks, it is characterized in that the span of the degree of depth of the pit (222) on the some subregions of described dielectric layer (20) is for being 0.3～0.8 μ m with two contact-making surfaces.
10. the electrostatic chuck with two contact-making surfaces as claimed in claim 1 is characterized in that, described dielectric layer (20) is the ceramic layer of heat conduction.
11. the electrostatic chuck with two contact-making surfaces as claimed in claim 1 is characterized in that, is provided with some electrodes (21) in the described dielectric layer (20); Described some electrodes (21) are connected with DC power supply, form electrostatic attraction and come sticking and fixed wafer (30) between described dielectric layer (20) and described wafer (30).
12. the electrostatic chuck with two contact-making surfaces as claimed in claim 1 is characterized in that, some subregions of corresponding described dielectric layer (20) in the described pedestal (10) are respectively arranged with some cooling pipes (11); Described cooling pipe (11) comprises helium passages, and it passes to space 40 between described wafer (30) and the described dielectric layer (20) with helium.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206363434U CN201966192U (en) | 2010-12-01 | 2010-12-01 | Static sucker with double contact surfaces |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010206363434U CN201966192U (en) | 2010-12-01 | 2010-12-01 | Static sucker with double contact surfaces |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN201966192U true CN201966192U (en) | 2011-09-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010206363434U Expired - Lifetime CN201966192U (en) | 2010-12-01 | 2010-12-01 | Static sucker with double contact surfaces |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN201966192U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543815A (en) * | 2011-12-31 | 2012-07-04 | 苏州固锝电子股份有限公司 | Sucking disc device used for transferring semi-conductor crystal grains on graphite boat |
| CN103617961A (en) * | 2011-12-31 | 2014-03-05 | 苏州固锝电子股份有限公司 | An attracting disc mechanism for moving semiconductor chips |
-
2010
- 2010-12-01 CN CN2010206363434U patent/CN201966192U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102543815A (en) * | 2011-12-31 | 2012-07-04 | 苏州固锝电子股份有限公司 | Sucking disc device used for transferring semi-conductor crystal grains on graphite boat |
| CN103617961A (en) * | 2011-12-31 | 2014-03-05 | 苏州固锝电子股份有限公司 | An attracting disc mechanism for moving semiconductor chips |
| CN103617961B (en) * | 2011-12-31 | 2016-07-06 | 苏州固锝电子股份有限公司 | Transfer semiconductor chip sucking disc mechanism |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Static sucker with double contact surfaces Effective date of registration: 20150202 Granted publication date: 20110907 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20170809 Granted publication date: 20110907 Pledgee: China Development Bank Co Pledgor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Registration number: 2009310000663 |
|
| PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CX01 | Expiry of patent term |
Granted publication date: 20110907 |
|
| CX01 | Expiry of patent term |