CN216351634U - High-speed polarization modulator based on submicron lithium niobate film - Google Patents
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- CN216351634U CN216351634U CN202122923418.8U CN202122923418U CN216351634U CN 216351634 U CN216351634 U CN 216351634U CN 202122923418 U CN202122923418 U CN 202122923418U CN 216351634 U CN216351634 U CN 216351634U
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- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 title claims abstract description 70
- 229940125730 polarisation modulator Drugs 0.000 title claims abstract description 52
- 239000010409 thin film Substances 0.000 claims abstract description 41
- 239000010408 film Substances 0.000 claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 20
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 239000010936 titanium Substances 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 239000010931 gold Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
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- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
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- 238000001312 dry etching Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
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- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
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- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000005697 Pockels effect Effects 0.000 description 1
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Abstract
The utility model discloses a high-speed polarization modulator based on a submicron lithium niobate film, which comprises a ridge waveguide and a GSG electrode structure. The GSG electrode structure is formed on the periodically polarized lithium niobate film and comprises a signal electrode, a first grounding electrode and a second grounding electrode, wherein the first grounding electrode and the second grounding electrode are positioned on two sides of the signal electrode, and the ridge waveguide is positioned between the grounding electrode and the signal electrode. Through the organic combination of the submicron lithium niobate thin film ridge waveguide and the GSG electrode structure and the parameter optimization design, the ridge waveguide can be well matched with the modulation electrode and the optical signal can be well matched with the modulation signal, finally, the low half-wave voltage, the high modulation speed and the wide modulation bandwidth can be realized on the polarization modulator, and meanwhile, the size of the polarization modulator can be further miniaturized.
Description
Technical Field
The utility model relates to the technical field of photoelectrons, in particular to a high-speed polarization modulator based on a submicron lithium niobate film.
Background
The polarization characteristic of light is an important operation dimension in the field of optical information, so that the polarization modulator is also an electro-optical modulation device with wide application prospect. Lithium niobate is used as a multifunctional crystal, and is widely applied to various photoelectric and nonlinear devices due to the characteristics of wide transparent range, large photoelectric coefficient, large nonlinear coefficient and the like. The strong electro-optic effect (pockels effect) in lithium niobate crystals can cause its refractive index to vary linearly on a femtosecond time scale with the application of an electric field. By utilizing the transverse electro-optic effect of the lithium niobate and applying transverse electric fields on two sides of the periodically polarized lithium niobate crystal, a swinging domain structure in the configuration of a Solc filter is formed, and light is polarized and coupled when passing through the swinging domain structures, so that the control of electric signals on the polarization direction of the light can be realized.
The existing lithium niobate polarization modulator is usually prepared by adopting a traditional titanium diffusion waveguide mode, a layer of metallic titanium film is firstly deposited on a lithium niobate wafer, then the waveguide is prepared by high-temperature diffusion, then a periodic inversion domain is prepared on a waveguide path by using a high-voltage polarization mode, finally an electrode structure is prepared by using an overlay scheme, and an electric field is applied on an electrode to realize the polarization adjustment of an optical signal in the waveguide. The other preparation method is to prepare a ridge waveguide structure on the periodically polarized lithium niobate thin film with the micron-sized thickness by adopting a cutting method, form the ridge waveguide structure by cutting and scribing grooves, then embed electrodes into the grooves at two sides of the waveguide, apply electric fields at two sides of the ridge waveguide through the electrodes, and realize polarization rotation of input light in the lithium niobate ridge waveguide by utilizing a transverse electro-optic effect.
However, the existing lithium niobate polarization modulator preparation scheme has the following problems: the titanium diffusion lithium niobate waveguide and the micron-sized lithium niobate thin film waveguide have larger sizes, so that the size of a spot mode field in the waveguide is generally 6-9 μm, and the electrode spacing is generally required to be larger than 9 μm. The large electrode spacing results in the need of a high half-wave voltage to achieve the electric field intensity required by signal modulation, for example, the half-wave voltage length product of the currently known lithium niobate polarization modulator is required to be not less than 13Vcm, which can greatly improve the design difficulty and power consumption of the system. In order to solve the problem of high half-wave voltage, the design and preparation of the waveguide with a small mode field must be realized. For the titanium diffusion technology, the small core/cladding refractive index difference is determined in principle that the light spot constraint of a small mode field cannot be realized, and the lithium niobate film ridge waveguide prepared by a diamond blade precision cutting mode can realize the large core/cladding refractive index difference, but the processing precision is limited, so that a waveguide structure of the small mode field cannot be prepared on the submicron lithium niobate film.
In addition, the existing titanium-diffused lithium niobate waveguide and micron-sized lithium niobate thin-film waveguide polarization modulators both adopt the structural design of the lumped electrode, and the modulation bandwidth of the lumped electrode structure can only reach hundreds of MHz theoretically, so that the application range of the modulator is limited to a great extent.
SUMMERY OF THE UTILITY MODEL
Aiming at the problems in the prior art, the utility model discloses a submicron lithium niobate film-based high-speed polarization modulator, wherein a submicron lithium niobate film ridge waveguide and a GSG electrode structure are organically combined, so that the ridge waveguide and a modulation electrode are well matched, an optical signal and a modulation signal are well matched, finally, low half-wave voltage, high modulation speed and wide modulation bandwidth are realized on the polarization modulator, and the size of the polarization modulator is further miniaturized.
Specifically, the submicron lithium niobate thin film-based high-speed polarization modulator may include a ridge waveguide and a GSG electrode structure; wherein,
the ridge waveguide is formed in a submicron periodically polarized lithium niobate film;
the GSG electrode structure is formed on the periodically polarized lithium niobate thin film and comprises a signal electrode and a first grounding electrode and a second grounding electrode which are positioned on two sides of the signal electrode;
the ridge waveguide is located between the ground electrode and the signal electrode.
Further, the high-speed polarization modulator can also comprise a substrate and an insulating layer positioned between the substrate and the periodically poled lithium niobate thin film.
Preferably, the periodically poled lithium niobate thin film is a z-cut lithium niobate thin film; and/or the insulating layer is a silicon dioxide insulating layer; and/or the substrate is a lithium niobate substrate or a silicon substrate.
Further, the GSG electrode structure has a first metal layer formed on the periodically poled lithium niobate thin film, and a second metal layer formed on the first metal layer.
Preferably, the first metal layer is a titanium layer, and the second metal layer is a gold layer.
Preferably, the first metal layer has a thickness of 100-200nm, and the second metal layer has a thickness of 100-200 nm.
Preferably, the periodically poled lithium niobate thin film has a poling width of 1-10mm, a poling region length of 5-50mm, a poling duty ratio of about 50%, and a poling period Λ ═ λ/[ n%eff(TE)-neff(TM)]λ is the input light wavelength of the polarization modulator, neff(TE) and neff(TM) is the effective refractive index of TE and TM polarized light, respectively, in the ridge waveguide.
Preferably, the ridge waveguide has a height of 400-1000nm, a width of 1-2 μm, and sloped sidewalls with a slope angle of 65-85 °.
Preferably, the signal electrode has a width of 10-20 μm and a thickness of 0.5-2 μm, the ground electrode has a width of 20-50 μm and a thickness of 0.5-2 μm, and a spacing between the ridge waveguide and the adjacent signal and ground electrodes is 2-4 μm.
Drawings
The following describes embodiments of the present invention in further detail with reference to the accompanying drawings.
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 illustrates one example of a submicron lithium niobate thin film structure useful in the present invention;
FIG. 2 schematically shows a periodic poling step used in the fabrication method of the present invention;
FIG. 3 schematically illustrates a waveguide fabrication step used in the fabrication method of the present invention;
FIGS. 4-5 schematically illustrate GSG electrode fabrication steps used in the fabrication method of the present invention;
FIG. 6 illustrates a perspective view of an exemplary submicron lithium niobate film based high-speed polarization modulator according to the present invention;
FIG. 7 shows a modulation electric field profile according to the polarization modulator structure shown in FIG. 6.
Detailed Description
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following examples are provided by way of illustration in order to fully convey the spirit of the utility model to those skilled in the art to which the utility model pertains. Accordingly, the present invention is not limited to the embodiments disclosed herein.
In the utility model, a polarization modulator realized by adopting a GSG (ground-signal-ground) electrode structure on a submicron lithium niobate film is provided for the first time. In a basic structure of the polarization modulator, a ridge waveguide formed in a submicron-sized Periodically Poled Lithium Niobate (PPLN) thin film, and a GSG electrode structure for supplying a modulation electric field to the ridge waveguide are included, wherein the GSG electrode structure is formed on the periodically poled lithium niobate thin film, and a ground electrode and a signal electrode are provided on both sides of the ridge waveguide to supply the modulation electric field thereto.
Because the GSG electrode structure often requires a relatively complex design and manufacturing process, it is difficult to accurately implement the GSG electrode structure on the sidewall of the micron-sized lithium niobate thin film ridge waveguide having a very small size and to provide the required modulation electric field in conformity with the ridge waveguide. Therefore, the present invention further discloses a method for preparing the polarization modulator of the present invention, and provides an optimized specific design scheme of the polarization modulator on the basis of the above basic structure of the polarization modulator, thereby presenting a submicron lithium niobate thin film ridge waveguide structure suitable for high-speed polarization modulation, and a GSG electrode structure adapted thereto, and finally allowing the advantages of low half-wave voltage and high modulation bandwidth to be realized on the polarization modulator, so that the polarization modulator is particularly suitable for application scenarios such as miniaturization, high efficiency and high-speed polarization modulation.
Fig. 1-5 will schematically present the fabrication process of a sub-micron lithium niobate thin film based polarization modulator according to the present invention, which comprises a periodic polarization step, a waveguide fabrication step, and a GSG electrode fabrication step in that order.
Fig. 1 shows an example of a submicron lithium niobate thin film structure used in the present invention. As shown in fig. 1, the lithium niobate thin film structure may include, in order from top to bottom, a lithium niobate thin film (i.e., LN thin film), an insulating layer, and a substrate.
The lithium niobate thin film has a thickness of a submicron order, which may be, for example, 0.4 to 1 μm. In an example of the present invention, a Z-cut lithium niobate thin film may be used as the lithium niobate thin film.
The substrate may be, for example, a lithium niobate substrate or a silicon substrate, which may have a thickness of, for example, 300-.
Alternatively, for example, SiO may be provided between the lithium niobate thin film layer and the substrate2An insulating layer such as a layer, which may have a thickness of about 2 μm, for example.
Fig. 2 schematically shows a periodic polarization step used in the production method of the present invention for subjecting a submicron lithium niobate thin film to a periodic polarization treatment to obtain a periodically polarized lithium niobate thin film.
According to the present invention, the periodic polarizing step may include a polarizing electrode forming sub-step for forming the periodically polarizing electrode on the submicron lithium niobate thin film and a polarizing sub-step for periodically polarizing the submicron lithium niobate thin film.
In the polarizing electrode forming substep, a polarizing electrode metal layer having a thickness of several hundreds nm, for example, may be deposited on the upper surface (e.g., + Z plane) of the lithium niobate thin film. As an example, metals such as Au, Al, or Cr can be used for the polarizing electrodes.
Then, a pattern of the polarization electrode can be defined on the electrode metal layer by means of uv lithography, and a desired periodic polarization electrode structure can be formed on the polarization electrode metal layer by means of an etching process, as shown in fig. 2.
Therefore, in the polarizing sub-step, a polarizing electric field is applied to the lithium niobate thin film via the periodic polarizing electrode, and the lithium niobate thin film is subjected to periodic polarizing treatment with the Z-axis direction as the polarizing direction, for example, to obtain a PPLN thin film structure.
FIG. 3 schematically illustrates a waveguide fabrication step used in the fabrication method of the present invention for etching a PPLN film to form a ridge waveguide structure on the film.
According to the present invention, the waveguide preparation step may include a mask substep for forming a metal mask on the surface of the PPLN film and a waveguide shaping substep for forming a ridge waveguide structure on the PPLN film by means of inductively coupled plasma dry etching.
In the masking substep, a mask metal layer may be deposited on the upper surface (e.g., + Z plane) of the PPLN film, wherein the mask metal is, for example, nickel or chromium. Then, a mask pattern may be defined on the PPLN film by uv lithography, and a metal mask may be formed by an etching process.
Therefore, a mask pattern can be transferred onto the PPLN film by inductively coupled plasma dry etching (ICP) in a waveguide forming step, thereby forming a ridge waveguide structure. It will be appreciated by those skilled in the art that during the lCP etching process, the PPLN film protected by the metal mask will not be etched away, while the PPLN film exposed outside the metal mask will be etched away to a certain depth, thus forming a ridge waveguide structure, as shown in FIG. 3.
Fig. 4 to 5 schematically show the GSG electrode fabrication step used in the fabrication method of the present invention for further forming a GSG electrode structure on a PPLN film on which a ridge waveguide has been formed.
According to the present invention, the GSG electrode preparing step may include a vapor deposition sub-step for forming a GSG electrode metal layer on the PPLN film by means of a vapor deposition process, a thickening sub-step for increasing a thickness of the metal layer in a region corresponding to the GSG electrode structure by means of an electroplating process, and an electrode forming sub-step for removing the metal layer in a region other than the GSG electrode structure to finally form the GSG electrode structure on the PPLN film.
In the vapor deposition substep, a metallic titanium layer may be deposited on the surface of the PPLN film by a Physical Vapor Deposition (PVD) method, and then a metallic gold layer may be deposited on the metallic titanium layer. As an example, the metal titanium layer may have a thickness of 100-200nm and the metal gold layer may have a thickness of 100-200 nm.
Then, in the thickening substep, the regions of the PPLN film outside the GSG electrode structure may be masked with photoresist by means of overlay, and the thickness of the GSG electrode metal layer may be increased by an electroplating process.
Finally, in the sub-step of electrode formation, the photoresist may be removed, and the GSG electrode metal layer (e.g. metal titanium and metal gold) on the GSG electrode structure may be etched away, so that the complete GSG electrode structure may be accurately obtained on both sides of the ridge waveguide, as shown in fig. 4 and 5.
By means of the preparation method, the ridge waveguide structure and the matched GSG electrode structure can be realized on the submicron lithium niobate film in a precise and controllable mode, and therefore the polarization modulator structure provided by the utility model is obtained.
Under the basic structure of the polarization modulator provided by the utility model, the GSG electrode structure generates a modulation electric field for the ridge waveguide under the action of a radio frequency signal applied by a radio frequency signal source so as to form a rocking domain structure in a Solc filter configuration in the PPLN ridge waveguide by virtue of a transverse electro-optic effect. The optical signal is coupled into the PPLN ridge waveguide through the polarization-maintaining fiber, and polarization coupling will occur when passing through these swinging domain structures, so as to obtain polarization modulation. At this time, the adaptation of the ridge waveguide and the GSG electrode structure in the structural parameters is very critical to the formation of the wobble domain structure, and therefore, the present invention will be further described below with reference to a polarization modulator structure with specific parameter design implemented based on this basic structure.
Figure 6 illustrates a perspective view of a preferred embodiment of a sub-micron lithium niobate based high-speed polarization modulator according to the present invention.
As shown in fig. 6, a polarization modulator according to the present invention may include a substrate, an insulating layer, a PPLN thin film ridge waveguide, and a GSG electrode structure.
For example, a Z-cut lithium niobate film may be used as the PPLN film for forming the ridge waveguide.
The substrate may be, for example, a lithium niobate substrate or a silicon substrate, which may have a thickness of, for example, 300-.
Alternatively, for example, SiO may be provided between the lithium niobate thin film layer and the substrate2An insulating layer such as a layer, which may have a thickness of about 2 μm, for example.
In the preferred embodiment, the PPLN film may have a poling width of 1-10mm, a poling area length of 10-50mm, and a poling duty cycle of about 50%, and its poling period Λ ═ λ/[ n%eff(TE)-neff(TM)]λ is the input light wavelength of the polarization modulator, neff(TE) and neff(TM) is the effective refractive index of the TE and TM polarized light, respectively, in the ridge waveguide.
The PPLN thin film ridge waveguide can have a height of 400-1000nm, a waveguide width of 1-2 μm, and sloped sidewalls, wherein the sloped sidewalls have a slope angle of 65-85 deg.
In the GSG electrode structure, the signal electrode may have a width of 10-20 μm and a thickness of 0.5-2 μm, and the ground electrode has a width of 20-50 μm and a thickness of 0.5-2 μm.
Wherein the pitch between the PPLN thin film ridge waveguide and the adjacent signal electrode and ground electrode is set to 2-4 μm.
According to the present invention, the GSG electrode structure may have a two-metal layer structure composed of a first metal layer and a second metal layer, wherein: the first metal layer is a metal titanium layer and is formed on the surface of the PPLN film; the second metal layer is a metal gold layer and is formed on the first metal layer.
As a preferred example, the first metal layer may have a thickness of 100-200nm and the second metal layer may have a thickness of 100-200 nm.
Tests show that under the structural design parameters, the influence of the dispersion of the thin film material and the structural dispersion of the submicron ridge waveguide is considered at the same time, the optimal matching is realized between the radio frequency modulation signal and the speed of the optical signal group in the submicron ridge waveguide, and the good matching is realized between the characteristic impedance of the modulation electrode and the characteristic impedance of the signal source and the load resistor, so that the higher modulation speed is realized on the polarization modulator, the improvement of more than two orders of magnitude is realized on the modulation bandwidth, and the smaller modulation driving voltage is also allowed, so that the polarization modulator can work under the voltage compatible with the CMOS technology, and the polarization modulator is very favorable for expanding the application scene of the polarization modulator. In addition, the polarization modulator is small in overall size and easy to integrate.
FIG. 7 shows a modulation electric field profile for the polarization modulator structure according to FIG. 6, which shows that the modulation electric field profile provided by the GSG electrode structure is well matched to the ridge waveguide formed on the sub-micron PPLN film, thereby allowing high speed and high bandwidth polarization modulation.
Under the optimized polarization modulator structure, the reflection loss of input and output of the modulation electric signal can be reduced, extra absorption loss of the light signal cannot be brought by the GSG electrode, and the modulation bandwidth is improved to the level of tens of GHz. At this time, the half-wave voltage length product for the polarization modulator can be reduced to about 1Vcm, so the polarization modulator can directly use the output electrical signal of the CMOS chip as the modulation electrical signal without additional signal amplification, which will greatly reduce the complexity of system design, improve the integration level, and thus reduce the system power consumption.
Although the present invention has been described in connection with the embodiments illustrated in the accompanying drawings, it will be understood by those skilled in the art that the embodiments described above are merely exemplary for illustrating the principles of the present invention and are not intended to limit the scope of the present invention, and that various combinations, modifications and equivalents of the above-described embodiments may be made by those skilled in the art without departing from the spirit and scope of the present invention.
Claims (9)
1. A high-speed polarization modulator based on a submicron lithium niobate film is characterized by comprising a ridge waveguide and a GSG electrode structure; wherein,
the ridge waveguide is formed in a submicron periodically polarized lithium niobate film;
the GSG electrode structure is formed on the periodically polarized lithium niobate thin film and comprises a signal electrode and a first grounding electrode and a second grounding electrode which are positioned on two sides of the signal electrode;
the ridge waveguide is located between the ground electrode and the signal electrode.
2. The high-speed polarization modulator of claim 1 further comprising a substrate and an insulating layer between said substrate and said periodically poled lithium niobate thin film.
3. The high-speed polarization modulator of claim 2 wherein said periodically poled lithium niobate film is a z-cut lithium niobate film; and/or the insulating layer is a silicon dioxide insulating layer; and/or the substrate is a lithium niobate substrate or a silicon substrate.
4. The high-speed polarization modulator of claim 1, wherein the GSG electrode structure has a first metal layer formed on the periodically poled lithium niobate film, and a second metal layer formed on the first metal layer.
5. The high-speed polarization modulator of claim 4, wherein the first metal layer is a titanium layer and the second metal layer is a gold layer.
6. The high-speed polarization modulator of claim 5 wherein the first metal layer has a thickness of 100-200nm and the second metal layer has a thickness of 100-200 nm.
7. The high-speed polarization modulator of claim 1 wherein the periodically poled lithium niobate thin film has a poling width of 1-10mm, a poling area length of 5-50mm, a poling duty cycle of about 50%, and a poling period Λ ═ λ/[ n ]eff(TE)-neff(TM)]λ is the input light wavelength of the polarization modulator, neff(TE) and neff(TM) is the effective refractive index of TE and TM polarized light, respectively, in the ridge waveguide.
8. The high-speed polarization modulator of claim 1 wherein the ridge waveguide has a height of 400-1000nm, a width of 1-2 μm, and sloped sidewalls with a slope angle of 65-85 °.
9. The high-speed polarization modulator of claim 1, wherein the signal electrode has a width of 10-20 μm and a thickness of 0.5-2 μm, the ground electrode has a width of 20-50 μm and a thickness of 0.5-2 μm, and the ridge waveguide is spaced 2-4 μm from adjacent signal and ground electrodes.
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