CN216288379U

CN216288379U - High-voltage-withstanding rectifier diode

Info

Publication number: CN216288379U
Application number: CN202123093595.4U
Authority: CN
Inventors: 路立群; 石雷; 李风燕
Original assignee: Shandong Saike Gangzheng Semiconductor Co ltd
Current assignee: Shandong Saike Gangzheng Semiconductor Co ltd
Priority date: 2021-12-10
Filing date: 2021-12-10
Publication date: 2022-04-12
Anticipated expiration: 2031-12-10

Abstract

The utility model discloses a high-voltage-withstanding rectifier diode which comprises an upper core block, wherein a fixed end head is fixedly arranged at the front end of the upper core block, four wiring pins are fixedly arranged in the fixed end head, the front ends of the four wiring pins are fixedly connected with lead heads, pier heads are fixedly arranged in the four lead heads, the rear ends of the four pier heads are fixedly connected with the wiring pins, lead rods are fixedly connected with the front ends of the four pier heads, and rubber protection rings are fixedly sleeved on the outer walls of the lead rods at the front ends of the four pier heads. The utility model discloses a high-voltage-resistance rectifier diode which can protect a lead head and a lead rod inside, ensure the safety in carrying, increase the thermal capacity of the lead rod, improve the anti-surge capacity of the diode, effectively improve the voltage resistance of the diode, increase the reverse breakdown voltage of the diode, reduce the forward voltage and have good stability.

Description

High-voltage-withstanding rectifier diode

Technical Field

The utility model relates to the technical field of rectifier diodes, in particular to a high-voltage-resistance rectifier diode.

Background

The semiconductor diode has the conductivity of unidirectional current and has a rectification function, the diode is generally called a rectification diode with the output current of more than 100mA, the rectification diode is generally a PN junction interface formed by sintering a P-type semiconductor and a P-type semiconductor, and a thin base layer is added between the P-type semiconductor and an I-type semiconductor to obtain higher reverse breakdown voltage.

Rectifier diode generally designs into pressure equipment formula structure, mainly by the tube socket, the chip, the lead wire is constituteed, then with sealed glue embedment protection, traditional lead wire comprises upset head and line pole two parts, the shortcoming of this kind of lead wire is behind the diode encapsulation, when the lead wire atress is crooked in the assembling process, it breaks to make sealed glue very easily, thereby lead to the diode inefficacy or life-span to shorten, and rectifier diode AT frame's last core piece is the cuboid usually, the area of contact between epoxy plastic-sealed body and the frame is little, lead to the firmness between epoxy plastic-sealed body and the frame relatively poor, cause epoxy plastic-sealed body and frame split when installing the circuit board easily and cause the electrical property of product to receive the influence or even inefficacy.

The utility model discloses a rectifier diode (CN 205264714U), which comprises a bracket and a lead, wherein the bracket is provided with a soldering tin layer, the soldering tin layer is provided with an N-type semiconductor, and the N-type semiconductor is connected with the lead through a PN junction. However, the rectifying diode has a simple structure, so that the diode has low voltage resistance, cannot bear large voltage and current, and has a low application range.

SUMMERY OF THE UTILITY MODEL

The utility model aims to solve the defects in the prior art and provides a high-voltage-resistance rectifying diode.

In order to achieve the purpose, the utility model adopts the following technical scheme: a high-voltage-resistance rectifier diode comprises an upper core block, wherein a fixed end head is fixedly arranged at the front end of the upper core block, four wiring pins are fixedly arranged in the fixed end head, the front ends of the four wiring pins are fixedly connected with lead heads, pier heads are fixedly arranged in the four lead heads, the rear ends of the four pier heads are fixedly connected with the wiring pins, the front ends of the four pier heads are fixedly connected with lead rods, and rubber protective rings are fixedly sleeved at the outer walls of the lead rods at the front ends of the four pier heads;

go up the fixed positive pole chip that is provided with of inside one end of core block, be connected through the wire jumper between the wiring foot of positive pole chip and same avris, the fixed positive pole metal aluminium lamination that is provided with in positive pole chip outside, the inside one end of keeping away from the positive pole chip of upper core block is fixed and is provided with the negative pole chip, be connected through the wire jumper between the wiring foot of negative pole chip and same avris, the fixed negative pole metal silver layer that is provided with in the negative pole chip outside, the fixed carbon nanotube layer that is provided with between positive pole chip and the negative pole chip.

As a further description of the above technical solution:

and the middle part of the rear end of the upper core block is fixedly provided with a through hole.

As a further description of the above technical solution:

and the outer walls of the upper core block and the fixed end are both fixedly provided with a protective film layer.

As a further description of the above technical solution:

the fixed end upper end is fixedly sleeved with a protective sleeve, and the end part of the protective sleeve is fixedly provided with a locking sleeve head.

As a further description of the above technical solution:

the four lead rods comprise a positive lead rod, a negative lead rod and two AC lead rods, the positive lead rod is connected with the anode chip, and the negative lead rod is connected with the cathode chip.

As a further description of the above technical solution:

four sealed glue is all provided with in the lead head, and sealed glue wraps up pier nose and rubber protection ring inside.

As a further description of the above technical solution:

and a plurality of heat dissipation plates are fixedly arranged in the upper core block.

As a further description of the above technical solution:

the thickness of the carbon nanotube layer is 275 mu m, the thickness of the anode metal aluminum layer is 4 mu m, and the thickness of the cathode metal silver layer is 0.5 mu m.

The utility model has the following beneficial effects:

1. according to the high-voltage-resistance rectifier diode provided by the utility model, the protective sleeve is sleeved at the end head of the diode, so that the lead head and the lead rod inside the diode can be protected, the phenomenon that the lead rod is bent and broken due to touch in the process of carrying is prevented, the situation that the lead head is broken is also prevented, and the safety in carrying is ensured.

2. According to the high-voltage-resistance rectifier diode provided by the utility model, the pier head is arranged in the lead head, the connection pin is connected with the lead rod through the pier head, then the lead rod is sleeved and protected through the rubber protective ring, and sealant is filled for dense connection, the pier head is thicker than the lead rod, when the lead rod is bent by external force, the pier head can prevent the joint from deforming, and the rubber protective ring can buffer the bending force, so that the lead rod is protected, the sealant cannot be damaged by stress, the sealing performance of the joint is prevented from being influenced, the size of the lead rod is increased by the boss, the heat capacity of the lead rod is increased, and the anti-surge capacity of the diode is improved.

3. According to the high-voltage-resistance rectifier diode provided by the utility model, the anode metal aluminum layer and the cathode metal silver layer are arranged outside the inner anode chip and the cathode chip, and the carbon nanotube layer is arranged between the anode chip and the cathode chip, so that the voltage resistance of the diode is effectively improved, the reverse breakdown voltage of the diode is higher, the forward voltage is reduced, and the stability is good.

4. According to the high-voltage-resistance rectifier diode provided by the utility model, the plurality of heat dissipation plates are arranged in the upper core block, so that the heat dissipation efficiency of the diode can be accelerated, and the service life of the diode can be prolonged.

Drawings

Fig. 1 is an isometric view of a main body of a high voltage rectifier diode according to the present invention;

fig. 2 is a diode axis diagram of a high voltage rectifier diode according to the present invention;

fig. 3 is an isometric view of a protective sleeve of a high-voltage rectifier diode according to the present invention;

fig. 4 is a cross-sectional view of a diode of a high voltage rectifier diode according to the present invention;

fig. 5 is a schematic diagram of an internal structure of a lead of a high-voltage rectifier diode according to the present invention.

Illustration of the drawings:

1. feeding a core block; 2. a through hole; 3. a protective sleeve; 4. locking the sleeve head; 5. fixing the end head; 6. a lead head; 7. a wire-guiding rod; 8. a protective film layer; 9. a heat dissipation plate; 10. a wiring pin; 11. a jumper wire; 12. an anode chip; 13. a cathode chip; 14. an anodic metallic aluminum layer; 15. a cathode metallic silver layer; 16. a carbon nanotube layer; 17. sealing glue; 18. heading; 19. a rubber guard ring.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention; the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance, and furthermore, unless otherwise explicitly stated or limited, the terms "mounted," "connected," and "connected" are to be construed broadly and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

Referring to fig. 1-5, one embodiment of the present invention is provided: a high-voltage-resistance rectifier diode comprises an upper core block 1, wherein a fixed end 5 is fixedly arranged at the front end of the upper core block 1, four wiring pins 10 are fixedly arranged inside the fixed end 5, the front ends of the four wiring pins 10 are fixedly connected with lead heads 6, pier heads 18 are fixedly arranged inside the four lead heads 6, the pier heads 18 are thicker than lead rods 7, when the lead rods 7 are bent by external force, the pier heads 18 can prevent the joints from deforming, the rear ends of the four pier heads 18 are fixedly connected with the wiring pins 10, the front ends of the four pier heads 18 are fixedly connected with the lead rods 7, rubber protection rings 19 are fixedly sleeved at the front ends of the four pier heads 18 on the outer walls of the lead rods 7, and the rubber protection rings 19 can buffer the received bending force, so that the lead rods 7 are protected, sealant 17 cannot be damaged by the force, and the sealing performance of the joints is prevented from being influenced;

go up the fixed positive pole chip 12 that is provided with of the inside one end of core block 1, be connected through wire jumper 11 between the wiring foot 10 of positive pole chip 12 and same avris, the fixed positive pole metallic aluminum layer 14 that is provided with in positive pole chip 12 outside, the fixed negative pole chip 13 that is provided with of the inside one end of keeping away from positive pole chip 12 of going up core block 1, be connected through wire jumper 11 between the wiring foot 10 of negative pole chip 13 and same avris, the fixed negative pole metallic silver layer 15 that is provided with in negative pole chip 13 outside, the fixed carbon nanotube layer 16 that is provided with between positive pole chip 12 and the negative pole chip 13, effectively improve this diode's resistance to pressure, make this diode's reverse breakdown voltage higher, forward voltage reduces, good stability.

The middle part of the rear end of an upper core block 1 is fixedly provided with a through hole 2, the outer walls of the upper core block 1 and a fixed end 5 are fixedly provided with a protective film layer 8 which can well protect the interior of the upper core block 1 and prevent internal parts from being damaged, the upper end of the fixed end 5 is fixedly provided with a protective sleeve 3, the end part of the protective sleeve 3 is fixedly provided with a locking sleeve head 4, four lead rods 7 comprise an anode lead rod, a cathode lead rod and two AC lead rods, the anode lead rod is connected with an anode chip 12, the cathode lead rod is connected with a cathode chip 13, sealant 17 is arranged in each of the four lead heads 6, the pier head 18 and a rubber protective ring 19 are wrapped in the sealant 17, the upper core block 1 is fixedly provided with a plurality of heat dissipation plates 9, the heat dissipation efficiency of a diode can be accelerated, the service life of the diode is prolonged, the thickness of a carbon nano tube layer 16 is 275 mu m, the thickness of the anode metallic aluminum layer 14 is 4 μm and the thickness of the cathode metallic silver layer 15 is 0.5 μm.

The working principle is as follows: when the high-voltage-resistance rectifier diode is used, the protective sleeve 3 is sleeved at the end of the diode, the internal lead head 6 and the lead rod 7 can be protected, the phenomenon that the lead rod 7 is bent and broken due to touch in the carrying process is prevented, the situation that the lead head 6 is broken is also prevented, the pier head 18 is arranged in the lead head 6, the connection pin 10 and the lead rod 7 are connected through the pier head 18, then the lead rod 7 is sleeved and protected through the rubber protective ring 19, the sealant 17 is filled for dense connection, the pier head 18 is thicker than the lead rod 7, when the lead rod 7 is bent due to external force, the pier head 18 can prevent the joint from deforming, the rubber protective ring 19 can buffer the bending force, the lead rod 7 is protected, the sealant 17 cannot be damaged due to the force, and the sealing performance of the joint is prevented from being influenced, and pier 18 has increased the volume of lead wire pole 7, make the thermal capacity of lead wire pole 7 increase, therefore improved the anti surge ability of diode, through setting up positive pole aluminium layer 14 and negative pole metallic silver layer 15 outside positive pole chip 12 and the negative pole chip 13 inside, and set up carbon nanotube layer 16 between positive pole chip 12 and negative pole chip 13, effectively improve the resistance to pressure of this diode, make the reverse breakdown voltage of this diode higher, forward voltage reduces, and stability is good, through setting up a plurality of heating panels 9 in last core block 1 inside, can accelerate the radiating efficiency of diode, prolong the life of diode.

Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments or portions thereof without departing from the spirit and scope of the utility model.

Claims

1. A high withstand voltage rectifier diode, includes pellet (1), its characterized in that: the front end of the upper core block (1) is fixedly provided with a fixed end (5), four wiring pins (10) are fixedly arranged in the fixed end (5), the front ends of the four wiring pins (10) are fixedly connected with lead heads (6), pier heads (18) are fixedly arranged in the four lead heads (6), the rear ends of the four pier heads (18) are fixedly connected with the wiring pins (10), the front ends of the four pier heads (18) are fixedly connected with lead rods (7), and rubber protective rings (19) are fixedly sleeved at the outer walls of the lead rods (7) at the front ends of the four pier heads (18);

go up fixed positive pole chip (12) that is provided with of inside one end of pellet (1), be connected through wire jumper (11) between positive pole chip (12) and wiring foot (10) of same avris, the fixed positive pole metal aluminium layer (14) that is provided with in positive pole chip (12) outside, the one end of going up pellet (1) inside keeping away from positive pole chip (12) is fixed and is provided with negative pole chip (13), be connected through wire jumper (11) between negative pole chip (13) and wiring foot (10) of same avris, the fixed negative pole metal silver layer (15) that is provided with in negative pole chip (13) outside, the fixed carbon nanotube layer (16) that is provided with between positive pole chip (12) and negative pole chip (13).

2. A high voltage rectifier diode according to claim 1, wherein: the middle part of the rear end of the upper core block (1) is fixedly provided with a through hole (2).

3. A high voltage rectifier diode according to claim 1, wherein: and protective films (8) are fixedly arranged on the outer walls of the upper core block (1) and the fixed end (5).

4. A high voltage rectifier diode according to claim 1, wherein: the fixed cover in fixed end (5) upper end is equipped with lag (3), lag (3) end fixing is provided with locking pullover (4).

5. A high voltage rectifier diode according to claim 1, wherein: the four lead rods (7) comprise a positive lead rod, a negative lead rod and two AC lead rods, the positive lead rod is connected with the anode chip (12), and the negative lead rod is connected with the cathode chip (13).

6. A high voltage rectifier diode according to claim 1, wherein: four inside all being provided with sealed glue (17) of lead head (6), and sealed glue (17) with pier nose (18) and rubber guard ring (19) parcel inside.

7. A high voltage rectifier diode according to claim 1, wherein: the inner part of the upper core block (1) is fixedly provided with a plurality of heat dissipation plates (9).

8. A high voltage rectifier diode according to claim 1, wherein: the thickness of the carbon nano tube layer (16) is 275 mu m, the thickness of the anode metal aluminum layer (14) is 4 mu m, and the thickness of the cathode metal silver layer (15) is 0.5 mu m.