CN216248084U - Probe station and IGBT chip test system - Google Patents
Probe station and IGBT chip test system Download PDFInfo
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- CN216248084U CN216248084U CN202122761519.XU CN202122761519U CN216248084U CN 216248084 U CN216248084 U CN 216248084U CN 202122761519 U CN202122761519 U CN 202122761519U CN 216248084 U CN216248084 U CN 216248084U
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Abstract
The utility model provides a probe station and an IGBT chip test system, wherein the probe station comprises: the conductive carrying platform is suitable for carrying the IGBT chip and is in contact with the collector of the IGBT chip; the insulating support piece is positioned on the side part of the conductive carrying platform; the insulating lifting piece is arranged opposite to the conductive carrying platform and is suitable for lifting along the insulating support piece; and the probe assembly comprises a grid probe and an emitter probe which are spaced from each other, one end of the grid probe and one end of the emitter probe respectively penetrate through the insulating lifting piece, the opposite end of the grid probe is suitable for being in contact with the grid of the IGBT chip, and the opposite end of the emitter probe is suitable for being in contact with the emitter of the IGBT chip. The probe station can directly carry out dynamic characteristic test on the IGBT chip, parasitic parameters caused by packaging the IGBT chip are avoided, and accuracy of a dynamic characteristic test result is improved. Meanwhile, the IGBT chip is prevented from being packaged, and the packaging cost is saved.
Description
Technical Field
The utility model relates to the technical field of semiconductor device testing, in particular to a probe station and an IGBT chip testing system.
Background
With the steady advance of our country's alternating current-direct current transmission engineering in recent years, high-voltage high-power electronic devices have been developed rapidly. Insulated Gate Bipolar Transistors (IGBTs) having the advantages of voltage control, high input impedance, low driving power, low on-resistance, low switching loss, and high operating frequency have been widely used in the industry. Meanwhile, SiC materials with higher critical breakdown field strength, better heat conduction performance, smaller on-resistance, higher electron saturation velocity and higher power density are gaining wide attention in the field of power semiconductors. The SiC material is used as a typical representative of a wide bandgap semiconductor material, is very suitable for developing a high-voltage high-power electronic device, and the excellent characteristics also enable the high-power electronic equipment based on the SiC device to have lighter weight, smaller volume, faster switching frequency, higher voltage, higher temperature bearing capacity and the like, so that the power density and the performance of the whole system are greatly improved. For electric equipment with the same power, the number of series-parallel connection elements can be effectively reduced by using the 15kV SiC IGBT with higher voltage level, and the characteristic enables applications such as a medium-voltage frequency converter, a medium-voltage direct-current micro-grid and a compact grid-connected converter of renewable energy sources to be possible.
The switching loss of the IGBT chip seriously restricts the working frequency and the working efficiency of the high-frequency converter, and further influences the electric energy quality of the whole loop system. The dynamic characteristics of the IGBT chip can reflect the switching loss of the IGBT chip. The dynamic characteristic test can obtain each main parameter of the IGBT chip in the switching process so as to provide reference for the optimal design of the IGBT module. Usually, the object of the dynamic characteristic test is an IGBT module, and the IGBT module is a structure obtained by packaging a plurality of IGBT chips with similar performance.
However, packaging the IGBT chip brings about parasitic parameters such as parasitic inductance, parasitic resistance, and parasitic capacitance, which affects the accuracy of the result of the dynamic characteristic test.
SUMMERY OF THE UTILITY MODEL
Therefore, the technical problem to be solved by the utility model is to overcome the defect of poor accuracy of the result of the conventional dynamic characteristic test, so that the probe station and the IGBT chip test system are provided.
The present invention provides a probe station, comprising: the conductive carrying platform is suitable for bearing an IGBT chip and is in contact with a collector of the IGBT chip; the insulating support piece is positioned on the side part of the conductive carrying platform; the insulating lifting piece is opposite to the conductive carrying platform and is suitable for lifting along the insulating support piece; a probe assembly including a gate probe and an emitter probe spaced apart from each other, one end of the gate probe and one end of the emitter probe respectively penetrating the insulating lifter, an opposite end of the gate probe adapted to contact the gate of the IGBT chip, and an opposite end of the emitter probe adapted to contact the emitter of the IGBT chip.
Optionally, the probe station further includes an insulating platform, and the insulating platform is adapted to bear the conductive carrier.
Optionally, the insulating platform has a groove that extends through a portion of the thickness of the insulating platform; the probe station further comprises: a heating element located within the recess.
Optionally, the insulating support comprises a transverse through hole penetrating through the insulating support, and the through hole extends longitudinally; the probe station further comprises: fix connecting piece and the cover of insulating lifting member lateral wall are established fastener on the connecting piece, the connecting piece passes the through-hole, one side surface of insulating support piece with the fastener orientation one side contact of connecting piece, the opposite side surface of insulating support piece with insulating lifting member orientation one side contact of connecting piece.
The utility model also provides an IGBT chip test system, comprising: the probe station; the cathode of the power supply is electrically connected with one end of the emitter probe, which is far away from the conductive carrying platform; one end of the load inductor is electrically connected with the positive electrode of the power supply, and the opposite end of the load inductor is electrically connected with the conductive carrying platform; a freewheeling diode having a cathode electrically connected to the anode of the power supply and an anode electrically connected to the conductive stage; and the anode of the pulse generator is electrically connected with one end of the grid probe, which is far away from the conductive carrying platform, and the cathode of the pulse generator is electrically connected with one end of the emitter probe, which is far away from the conductive carrying platform.
Optionally, the IGBT chip test system further includes: the positive electrode of the first capacitor is electrically connected with the positive electrode of the pulse generator, and the negative electrode of the first capacitor is electrically connected with the negative electrode of the pulse generator.
Optionally, the IGBT chip test system further includes: one end of the grid resistor is electrically connected with the positive electrode of the pulse generator, and the opposite end of the grid resistor is electrically connected with one end of the grid probe, which is far away from the conductive carrying platform.
Optionally, the resistance value of the gate resistor is 5 Ω to 33 Ω.
Optionally, the IGBT chip test system further includes: and the anode of the second capacitor is electrically connected with the anode of the power supply, and the cathode of the second capacitor is electrically connected with the cathode of the power supply.
Optionally, the voltage of the power supply is 500V-10 kV.
The technical scheme of the utility model has the following advantages:
1. the probe station provided by the utility model is used for testing the dynamic characteristics of the IGBT chip, wherein the conductive carrying platform is suitable for bearing the IGBT chip and is in contact with the collector electrode of the IGBT chip, so that the electrical connection between the conductive carrying platform and the collector electrode of the IGBT chip is realized, and therefore, the dynamic characteristic testing equipment can be electrically connected with the collector electrode of the IGBT chip by electrically connecting the conductive carrying platform; the insulation supporting part and the insulation lifting part are used for supporting the probe assembly and adjusting the height of the probe assembly, so that one end of a grid probe in the probe assembly is contacted with a grid electrode of the IGBT chip, one end of an emitter probe is contacted with an emitter electrode of the IGBT chip, electrical connection between the grid probe and the grid electrode of the IGBT chip and electrical connection between the emitter probe and the emitter electrode of the IGBT chip are achieved, therefore, the dynamic characteristic testing equipment can achieve electrical connection with the grid electrode of the IGBT chip through electrically connecting one end, deviating from the conductive carrying platform, of the grid probe, and achieve electrical connection with the emitter electrode of the IGBT chip through electrically connecting one end, deviating from the conductive carrying platform, of the emitter probe. The probe station can directly test the dynamic characteristics of the IGBT chip, avoids parasitic parameters caused by packaging the IGBT chip, and improves the accuracy of the result of the dynamic characteristic test. Meanwhile, the IGBT chip is prevented from being packaged, and the packaging cost is saved. In addition, the IGBT chip is not damaged in the dynamic characteristic testing process, and the IGBT chip can be industrially produced after the testing is finished, so that the cost is saved. The insulated lifting piece moves up and down along the insulated support piece, so that the probe station can bear IGBT chips with different thicknesses, and the flexibility of the probe station is improved.
2. According to the IGBT chip test system, the negative electrode of the power supply is electrically connected with one end, away from the conductive carrier, of the emitter probe, so that the power supply is electrically connected with the emitter of the IGBT chip; the load inductor is electrically connected with the conductive carrier, so that the load inductor is electrically connected with the collector of the IGBT chip; the fly-wheel diode is electrically connected with the conductive carrier, so that the fly-wheel diode is electrically connected with the collector of the IGBT chip; the positive electrode of the pulse generator is electrically connected with one end, away from the conductive carrying platform, of the grid probe, so that the electrical connection between the pulse generator and the grid of the IGBT chip is realized; the cathode of the pulse generator is electrically connected with one end, away from the conductive carrying platform, of the emitter probe, so that the electrical connection between the pulse generator and the emitter of the IGBT chip is realized; the pulse generator is suitable for applying pulse voltage to the emitter and the gate of the IGBT chip so as to test the dynamic characteristics of the IGBT chip. The IGBT chip testing system is used for testing the dynamic characteristics of the IGBT chip, avoids parasitic parameters brought by packaging the IGBT chip, and improves the accuracy of the result of the dynamic characteristic test. Meanwhile, the IGBT chip is prevented from being packaged, and the packaging cost is saved. In addition, the IGBT chip is not damaged in the dynamic characteristic testing process, and the IGBT chip can be industrially produced after the testing is finished, so that the cost is saved.
3. The IGBT chip testing system further comprises a first capacitor, wherein the positive electrode of the first capacitor is electrically connected with the positive electrode of the pulse generator, the negative electrode of the first capacitor is electrically connected with the negative electrode of the pulse generator, and the first capacitor can reduce the current flowing through the IGBT chip in the switching-on process and avoid the damage of the IGBT chip caused by current overshoot.
4. The IGBT chip testing system further comprises a grid resistor, one end of the grid resistor is electrically connected with the positive electrode of the pulse generator, the opposite end of the grid resistor is electrically connected with one end, away from the conductive carrying platform, of the grid probe, and the grid resistor can reduce the switching speed of the IGBT chip, so that the current flowing through the IGBT chip in the switching-on process is reduced, and the damage of the IGBT chip caused by current overshoot is avoided.
5. The IGBT chip testing system further comprises a second capacitor, wherein the anode of the second capacitor is electrically connected with the anode of the power supply, the cathode of the second capacitor is electrically connected with the cathode of the power supply, the second capacitor is arranged to ensure that the current flowing through the IGBT chip has stable voltage, and the damage to the IGBT chip caused by overlarge current flowing through the IGBT chip due to the unstable voltage of the power supply is avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a left side view of a probe station provided in an embodiment of the present invention;
FIG. 2 is a schematic view of a fixing manner of the insulating supporting member and the insulating lifting member in FIG. 1;
FIG. 3 is a schematic structural view of the insulating support member of FIG. 2;
fig. 4 is a circuit structure diagram of an IGBT chip test system according to an embodiment of the present invention;
description of reference numerals:
1-a conductive stage; 2-an insulating support; 21-a through hole; 3-an insulated lifter; 4-grid probe; 5-an emitter probe; 6-an insulating platform; 7-a heating element; 8-a fastener; 9-connecting piece.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", "inside", "outside", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience in describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1, the present embodiment provides a probe station, including: the electric conduction carrier platform 1 is suitable for bearing an IGBT chip and is in contact with a collector electrode of the IGBT chip; the insulating support 2 is positioned on the side part of the conductive carrying platform 1; the insulating lifting piece 3 is arranged opposite to the conductive carrying platform 1 and is suitable for lifting along the insulating support piece 2; a probe assembly including a gate probe 4 and an emitter probe 5 spaced apart from each other, one end of the gate probe 4 and one end of the emitter probe 5 respectively penetrating the insulating lifter 3, an opposite end of the gate probe 4 adapted to contact the gate of the IGBT chip, and an opposite end of the emitter probe 5 adapted to contact the emitter of the IGBT chip.
The probe station is used for testing the dynamic characteristics of the IGBT chip, wherein the conductive carrying platform 1 is suitable for bearing the IGBT chip and is in contact with the collector electrode of the IGBT chip, so that the conductive carrying platform 1 is electrically connected with the collector electrode of the IGBT chip, and therefore the dynamic characteristic testing equipment can be electrically connected with the collector electrode of the IGBT chip by electrically connecting the conductive carrying platform 1; the insulating support member 2 and the insulating lifting member 3 are used for supporting the probe assembly and adjusting the height of the probe assembly, so that one end of a grid probe 4 in the probe assembly is contacted with the grid electrode of the IGBT chip, one end of an emitter probe 5 is contacted with the emitter electrode of the IGBT chip, and therefore the electrical connection between the grid probe 4 and the grid electrode of the IGBT chip and the electrical connection between the emitter probe 5 and the emitter electrode of the IGBT chip are achieved, the dynamic characteristic testing equipment can achieve the electrical connection between the grid electrode of the IGBT chip and the grid electrode of the IGBT chip through electrically connecting one end, deviating from the conductive carrying platform 1, of the grid probe 4, and achieve the electrical connection between the emitter electrode of the IGBT chip through electrically connecting one end, deviating from the conductive carrying platform 1, of the emitter probe 5. The probe station can directly test the dynamic characteristics of the IGBT chip, avoids parasitic parameters caused by packaging the IGBT chip, and improves the accuracy of the result of the dynamic characteristic test. Meanwhile, the IGBT chip is prevented from being packaged, and the packaging cost is saved. In addition, the IGBT chip is not damaged in the dynamic characteristic testing process, and the IGBT chip can be industrially produced after the testing is finished, so that the cost is saved. The insulated lifting piece 3 moves up and down along the insulated support piece 2, so that the probe station can bear IGBT chips with different thicknesses, and the flexibility of the probe station is improved.
Exemplarily, referring to fig. 2 to 3, in one embodiment, the insulating support 2 includes a through hole 21 extending through the insulating support 2 in a transverse direction, and the through hole 21 extends in a longitudinal direction; the probe station further comprises: fix connecting piece 9 of insulating lifting member 3 lateral wall and cover are established fastener 8 on the connecting piece 9, connecting piece 9 passes through-hole 21, one side surface of insulating support piece 2 with fastener 8 orientation one side contact of connecting piece 9, the opposite side surface of insulating support piece 2 with insulating lifting member 3 orientation one side contact of connecting piece 9. In the dynamic characteristic test, an IGBT chip is placed on the conductive carrier 1, and then the insulating lifting piece 3 is fixed at a proper height through the fastening piece 8 and the connecting piece 9, so that the grid probe 4 is contacted with a grid of the IGBT chip, and the emitter probe 5 is contacted with an emitter of the IGBT chip. It is to be understood that the insulating support member 2 and the insulating elevating member 3 include, but are not limited to, the above-described structure.
Specifically, the outer diameter of the fastening member 8 is larger than the inner diameter of the through hole 21, the diameter of the connecting member 9 is smaller than or equal to the inner diameter of the through hole 21, and the width of the insulating lifting member 3 is larger than the inner diameter of the through hole 21, so that the insulating support member 2 can be fixed between the fastening member 8 and the insulating lifting member 3. The fastening member 8 may be a nut, and the connecting member 9 may be a screw.
It should be noted that the gate probe 4 and the emitter probe 5 extend out of the insulating lifter 3 by the same length, so that the emitter probe 5 contacts the emitter of the IGBT chip at the same time as the gate probe 4 contacts the gate of the IGBT chip.
In this embodiment, the probe station further includes an insulating platform 6, and the insulating platform 6 is adapted to carry the conductive stage 1. Further, the insulating platform 6 has a groove running through part of the thickness of the insulating platform 6; the probe station also includes a heating element 7 located within the recess to perform high temperature dynamic property testing.
Referring to fig. 4, the present embodiment further provides an IGBT chip testing system, including: the probe station; the cathode of the power supply U is electrically connected with one end, away from the conductive carrying platform 1, of the emitter probe 5; load inductance LmSaid load inductance LmIs electrically connected with the positive pole of the power supply U, and the load inductance LmThe opposite end of the conductive carrier 1 is electrically connected with the conductive carrier; a cathode of the freewheeling diode PIN is electrically connected with an anode of the power supply U, and an anode of the freewheeling diode PIN is electrically connected with the conductive carrying platform 1; pulse generator UGESaid pulse generator UGEIs electrically connected with one end of the grid probe 4 departing from the conductive carrier 1, and the pulse generator UGEIs electrically connected with one end of the emitter probe 5 departing from the conductive carrier 1.
According to the IGBT chip testing system, the negative electrode of the power supply U is electrically connected with one end, away from the conductive carrying platform 1, of the emitter probe 5, so that the power supply U is electrically connected with the emitter of the IGBT chip; by applying a load inductance LmIs electrically connected with the conductive carrier 1, thereby realizing the load inductance LmThe IGBT chip is electrically connected with the collector electrode of the IGBT chip; the electrical connection between the PIN of the freewheeling diode and the collector of the IGBT chip is realized by electrically connecting the PIN of the freewheeling diode with the conductive carrier 1; by means of pulse generators UGEAnd the positive electrode ofOne end of the pole probe 4 departing from the conductive carrier 1 is electrically connected, so that the pulse generator U is realizedGEThe IGBT chip is electrically connected with the grid electrode of the IGBT chip; by applying said pulse generator UGEIs electrically connected with one end of the emitter probe 5 departing from the conductive carrier 1, thereby realizing the pulse generator UGEThe emitter of the IGBT chip is electrically connected with the power supply; pulse generator UGEThe method is suitable for applying pulse voltage to the emitter and the gate of the IGBT chip so as to test the dynamic characteristics of the IGBT chip. The IGBT chip testing system is used for testing the dynamic characteristics of the IGBT chip, avoids parasitic parameters brought by packaging the IGBT chip, and improves the accuracy of the result of the dynamic characteristic test. Meanwhile, the IGBT chip is prevented from being packaged, and the packaging cost is saved. In addition, the IGBT chip is not damaged in the dynamic characteristic testing process, and the IGBT chip can be industrially produced after the testing is finished, so that the cost is saved.
It is to be understood that the main methods of dynamic characteristic testing include a single pulse method and a double pulse method. The single pulse method is mainly used for simulating the working condition of an IGBT chip in the circuit breaker when the IGBT chip is switched off at twice rated current; the double-pulse method is mainly used for simulating the working condition of frequent switching of the IGBT in the power electronic device with inductive load such as a converter valve. The IGBT chip test system provided in this embodiment performs a dynamic characteristic test by using a double pulse method.
In this embodiment, the load inductor LmThe negative pole of the freewheeling diode PIN is connected with the positive pole of the power supply U through a first lead wire, and the negative pole of the freewheeling diode PIN is also connected with the positive pole of the power supply U through the first lead wire. Power supply U and pulse generator UGEAnd (4) grounding.
In this embodiment, the IGBT chip test system further includes: a current sensor (not shown in the figure) adapted to detect in real time a value of current I flowing through the IGBT chipC(ii) a A first voltage sensor (not shown in the figure), which is electrically connected to the conductive carrier 1 and one end of the emitter probe 5 away from the conductive carrier 1, respectively, and is adapted to detect the collector and the emitter of the IGBT chip in real timeVoltage value V between emittersCE(ii) a A data processing module (not shown in the figure) electrically connected with the current sensor and the first voltage sensor respectively, and adapted to process the current value ICSum voltage value VCECalculating the turn-on loss EonAnd turn-off loss Eoff。
Specifically, the current sensor includes, but is not limited to, a Rogowski coil that is sleeved on the first wire.
In this embodiment, the IGBT chip test system further includes: a second voltage sensor (not shown in the figure), which is electrically connected to one end of the emitter probe 5 away from the conductive carrier 1 and one end of the gate probe 4 away from the conductive carrier 1, respectively, and is adapted to detect a voltage value V between the gate and the emitter of the IGBT chip in real timeGE(ii) a The data processing module is also electrically connected with a second voltage sensor, and the data processing module is suitable for being used for processing the collector current ICSum voltage value VGECalculating the turn-on delay time td(on)And turn-off delay time td(off)。
In the embodiment, the voltage of the power supply U is 500V-10 kV. Illustratively, the voltage of the power source U is 500V, 650V, 1.2kV, 3.3kV, 6.5kV, or 10 kV. The voltage grade of the IGBT chip which can be subjected to the dynamic characteristic test by the IGBT chip test system is related to the voltage of the power supply U. When the voltage of the power supply U is higher, the IGBT chip testing system can test the dynamic characteristics of the IGBT chip with a higher voltage level; when the voltage of the power supply U is lower, the IGBT chip testing system can test the dynamic characteristics of the IGBT chip with a lower voltage level. Specifically, when the voltage of the power supply U is 10kV, the IGBT chip testing system can be used for testing the dynamic characteristics of the IGBT chip with the voltage level not higher than 10 kV. At present, no test system for testing the dynamic characteristics of the IGBT chip with the voltage level of 10kV exists for a while.
Preferably, in order to avoid the influence of the voltage fluctuation of the power supply U on the test, when the voltage of the power supply U is 10kV, the voltage level of the IGBT chip to be tested may be less than 10 kV. For example, the voltage level of the IGBT chip to be tested may be 9 kV.
Further, when the voltage level of the IGBT chip is high, the freewheeling diode PIN is a fast recovery diode. The fast recovery diode has higher voltage grade and smaller reverse recovery current, and meets the test requirement of the IGBT chip with higher voltage grade, such as a high-voltage silicon carbide IGBT chip. Illustratively, when the voltage of the power supply U is 10kV, the freewheeling diode PIN is a 10kV fast recovery diode.
In this embodiment, the load inductor LmThe inductance value of (a) is 50mH to 100 mH. By defining the load inductance LmThe inductance value of (2) to the electric current that flows through the IGBT chip when will turning on is injectd in safe range, in order to avoid causing the IGBT chip to damage because of the electric current overshoots. Illustratively, when the voltage of the power supply U is 9kV and the voltage level of the IGBT chip is 9kV, the load inductance LmMay be 80mH to ensure that the maximum value of the current flowing through the IGBT chip is less than 5A.
In a first embodiment, the IGBT chip test system further includes: a first capacitor C1Said first capacitor C1Is electrically connected with the positive electrode of the pulse generator, and the first capacitor C1And the negative pole of the pulse generator UGEIs electrically connected. A first capacitor C1The current flowing through the IGBT chip in the switching-on process can be reduced, and the damage of the IGBT chip caused by current overshoot is avoided.
In a second embodiment, the IGBT chip test system further includes: grid resistance RGThe gate resistance RGAnd one end of the pulse generator UGEThe positive electrode of the grid resistor R is electrically connected with the positive electrode of the grid electrodeGThe opposite end of which is electrically connected to the end of the gate probe 4 facing away from the electrically conductive carrier 1. Grid resistance RGThe switching speed of the IGBT chip can be reduced, so that the current flowing through the IGBT chip in the switching-on process is reduced, and the IGBT chip damage caused by current overshoot is avoidedAnd is bad.
In a third embodiment, referring to fig. 4, the IGBT chip test system further includes: grid resistance RGThe gate resistance RGHaving a first connection end and a second connection end, the first connection end being connected to the pulse generator UGEThe second connecting end is electrically connected with one end of the grid probe 4 departing from the conductive carrier 1; a first capacitor C1Said first capacitor C1Is electrically connected to the second connection terminal, the first capacitor C1And the negative pole of the pulse generator UGEIs electrically connected.
Further, in the second embodiment and the third embodiment, the resistance value of the gate resistor is 5 Ω to 33 Ω. Illustratively, the gate resistor has a resistance value of 5 Ω, 16 Ω, or 33 Ω. The energy of the IGBT chip is constant when the IGBT chip is switched on, and the grid resistance R is constantGThe larger the resistance value is, the slower the switching speed of the IGBT chip is, and the smaller the instantaneous current flowing through the IGBT chip when turned on. Grid resistance RGThe resistance value of the IGBT is too large, so that the switching speed of the IGBT chip is too slow, and the switching loss is increased; grid resistance RGToo small a resistance value will increase the current overshoot amplitude during the turn-on process. By limiting the resistance value of the gate resistor, the switching speed of the IGBT chip can be controlled in a proper range, current overshoot is avoided, and the switching loss of the chip can be controlled.
In a third embodiment, the pulse generator U is connected via a second lineGEThe negative electrode of the probe head and the probe head of the emitter probe 5 are deviated from one end of the conductive carrying platform 1; the grid resistor R is connected through a third leadGFirst connection end of and the pulse generator UGEThe positive electrode of (1); the grid resistor R is connected through a fourth leadGAnd the second connecting end of the grid probe 4 and one end of the grid probe deviating from the conductive carrying platform 1; the first capacitor C is connected through a fifth lead1And the gate resistor RGA second connection end of (a); the first capacitor C is connected through a sixth lead1And the negative pole of the pulse generator UGEThe negative electrode of (1); the first voltage sensor is connected with the conductive carrying platform 1 through a seventh lead; connecting the first voltage sensor and one end of the emitter probe 5, which is far away from the conductive carrying platform 1, through an eighth lead; a ninth lead is used for connecting a second voltage sensor and one end, away from the conductive carrying platform 1, of the emitter probe 5; a tenth lead is used for connecting a second voltage sensor and one end, away from the conductive carrying platform 1, of the grid probe 4; the data processing module is connected with the current sensor through an eleventh conducting wire; the data processing module is connected with the first voltage sensor through a twelfth wire; and the data processing module is connected with the second voltage sensor through a thirteenth conducting wire. In order to reduce the parasitic inductance of the signal loop, the lengths of the second wire to the thirteenth wire are shortened as much as possible, and the second wire to the thirteenth wire are twisted pairs.
In this embodiment, the IGBT chip test system further includes: second capacitor C2Said second capacitor C2Is electrically connected with the anode of the power supply U, and the second capacitor C2Is electrically connected with the negative electrode of the power supply U. Second capacitor C2The setting of (2) can guarantee that the electric current that flows through the IGBT chip has stable voltage, thereby avoid causing the IGBT chip to damage because the current that power U voltage's unstability made the IGBT chip of flowing through is too big. It is to be understood that commercial power U-modules sometimes exhibit voltage instability, which increases the risk of damaging the IGBT chip due to voltage overshoot.
The following describes the process of the double pulse test, taking the voltage of the power supply U as 9kV and the voltage class of the IGBT chip as 9kV as an example. Wherein, the pulse generator UGEThe pulse voltage of the power supply U is-5V-20V, and the power supply U, the current sensor, the first voltage sensor and the second voltage sensor are kept in an opening state.
t0Before the moment: pulse generator UGEA voltage of-5V is output, and the voltage value V between the grid electrode and the emitter electrode is obtainedGEis-5V, the voltage value between collector and emitter is VCECurrent I of 9kV flowing through IGBT chipCIs 0;
t0time: pulse generator UGEA voltage of 20V is output, and the voltage value V between the grid electrode and the emitter electrodeGERapidly rising to 20V; voltage value V between collector and emitterCERapidly drops to 0V;
t0～t1time period: current I flowing through IGBT chipCThe voltage value V between the grid and the emitter is continuously increasedGEIs 20V; voltage value V between collector and emitterCEIs 0V;
t1time: pulse generator UGEA voltage of-5V is output, and the voltage value V between the grid electrode and the emitter electrode is obtainedGERapidly drops to-5V; voltage value V between collector and emitterCERapidly increasing to 9 kV;
t1～t2in the time period: current I flowing through IGBT chipCRapidly drops to 0A and maintains 0A, the voltage value V between the grid and the emitterGEis-5V; voltage value V between collector and emitterCEIs 9 kV;
t2time of day, pulse generator UGEA voltage of 20V is output, and the voltage value V between the grid electrode and the emitter electrodeGERapidly rising to 20V; voltage value V between collector and emitterCERapidly drops to 0V;
t2～t3in the time period, the current I flowing through the IGBT chipCThe emission is increased, decreased and increased in sequence, and the voltage value V between the grid electrode and the emitting electrodeGEIs 20V; voltage value V between collector and emitterCEIs 0V;
t3time of day, pulse generator UGEA voltage of-5V is output, and the voltage value V between the grid electrode and the emitter electrode is obtainedGERapidly drops to-5V; voltage value V between collector and emitterCERapidly increasing to 9 kV;
t3after the moment, the voltage value V between the grid and the emitterGEis-5V; voltage value V between collector and emitterCECurrent I of 9kV flowing through IGBT chipCDown to 0A.
And the data processing module calculates the dynamic characteristic parameters according to the current values and the voltage values, and the calculation method adopts a standard number IEC60747-9: 2019. The switching loss of the IGBT is calculated by adopting the following formula:
the calculation result is as follows: opening loss Eon4.6719mJ, turn-off loss Eoff1.5872 mJ; turn-on delay time td(on)0.1950us, turn-off delay time td(off)＝0.2848us。
In addition, the fall time t can be calculatedf1.1046us, rise time tr0.2150us, off time toff＝td(off)+tf1.3894us, on time ton＝td(on)+tr＝0.41us。
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the utility model.
Claims (10)
1. A probe station, comprising:
the conductive carrying platform is suitable for bearing an IGBT chip and is in contact with a collector of the IGBT chip;
the insulating support piece is positioned on the side part of the conductive carrying platform;
the insulating lifting piece is opposite to the conductive carrying platform and is suitable for lifting along the insulating support piece;
a probe assembly including a gate probe and an emitter probe spaced apart from each other, one end of the gate probe and one end of the emitter probe respectively penetrating the insulating lifter, an opposite end of the gate probe adapted to contact the gate of the IGBT chip, and an opposite end of the emitter probe adapted to contact the emitter of the IGBT chip.
2. The probe station of claim 1, further comprising: and the insulating platform is suitable for bearing the conductive carrying platform.
3. The probe station of claim 2, wherein the insulating platform has a groove through a portion of a thickness of the insulating platform;
the probe station further comprises: a heating element located within the recess.
4. The probe station of claim 1, wherein the insulating support includes a transverse through-hole therethrough, and the through-hole extends longitudinally;
the probe station further comprises: fix connecting piece and the cover of insulating lifting member lateral wall are established fastener on the connecting piece, the connecting piece passes the through-hole, one side surface of insulating support piece with the fastener orientation one side contact of connecting piece, the opposite side surface of insulating support piece with insulating lifting member orientation one side contact of connecting piece.
5. An IGBT chip test system, comprising:
the probe station of any of claims 1 to 4;
the cathode of the power supply is electrically connected with one end of the emitter probe, which is far away from the conductive carrying platform;
one end of the load inductor is electrically connected with the positive electrode of the power supply, and the opposite end of the load inductor is electrically connected with the conductive carrying platform;
a freewheeling diode having a cathode electrically connected to the anode of the power supply and an anode electrically connected to the conductive stage;
and the anode of the pulse generator is electrically connected with one end of the grid probe, which is far away from the conductive carrying platform, and the cathode of the pulse generator is electrically connected with one end of the emitter probe, which is far away from the conductive carrying platform.
6. The IGBT chip test system of claim 5, further comprising:
the positive electrode of the first capacitor is electrically connected with the positive electrode of the pulse generator, and the negative electrode of the first capacitor is electrically connected with the negative electrode of the pulse generator.
7. The IGBT chip test system of claim 5 or 6, further comprising:
one end of the grid resistor is electrically connected with the positive electrode of the pulse generator, and the opposite end of the grid resistor is electrically connected with one end of the grid probe, which is far away from the conductive carrying platform.
8. The IGBT chip test system of claim 7, wherein the gate resistor has a resistance value of 5 Ω -33 Ω.
9. The IGBT chip test system of claim 5 or 6, further comprising:
and the anode of the second capacitor is electrically connected with the anode of the power supply, and the cathode of the second capacitor is electrically connected with the cathode of the power supply.
10. The IGBT chip test system of claim 5, wherein the voltage of the power supply is 500V-10 kV.
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