CN216213539U

CN216213539U - Multilayer thermoelectric semiconductor module with special connection mode

Info

Publication number: CN216213539U
Application number: CN202122107789.9U
Authority: CN
Inventors: 冯林; 吴永庆
Original assignee: Zhejiang Forerunner Thermoelectric Technology Co ltd
Current assignee: Zhejiang Forerunner Thermoelectric Technology Co ltd
Priority date: 2021-09-02
Filing date: 2021-09-02
Publication date: 2022-04-05
Anticipated expiration: 2031-09-02

Abstract

The utility model discloses a multilayer thermoelectric semiconductor module with a special connection mode, which comprises three ceramic substrates arranged in parallel from top to bottom, wherein the upper ceramic substrate is connected with the middle ceramic substrate through upper-layer semiconductor particles, the lower ceramic substrate is connected with the middle ceramic substrate through lower-layer semiconductor particles, the lower ceramic substrate is connected with the upper ceramic substrate through N-type semiconductor particles and P-type semiconductor particles, and wires are arranged on the lower ceramic substrate. According to the technical scheme, the notch is designed on the middle-layer ceramic substrate, so that the size of the notch is close to that of the copper particles on the lower ceramic substrate, when a product is assembled, each P-type semiconductor particle and each N-type semiconductor particle are placed at the notch to play a role in conducting connection from top to bottom, the P-type semiconductor particles and the N-type semiconductor particles which are connected from top to bottom can play a role in connecting and conducting, and also can play a role in refrigerating and heating, other assembling process modes are kept unchanged, production procedures are reduced, and cost is reduced.

Description

Multilayer thermoelectric semiconductor module with special connection mode

Technical Field

The utility model relates to the technical field of semiconductor thermoelectric modules, in particular to a multilayer thermoelectric semiconductor module with a special connection mode.

Background

A semiconductor Thermoelectric Module (TEM) for cooling/heating functions utilizes the Peltier effect of a semiconductor Thermoelectric material, and when a dc voltage is applied to an input terminal of the semiconductor Thermoelectric Module, a phenomenon of one end being cold and one end being hot is generated at two ends of the TEM, so as to cool and heat an object.

If there is a temperature difference between the two ends of the solid material, a concentration difference of thermally dependent carriers (electrons or holes) is generated, which is represented as an electrical phenomenon of thermoelectromotive force, i.e., a thermoelectric effect. The thermoelectric effect means a reversible and direct energy conversion between temperature difference and electricity and voltage. Such thermoelectric effect can be divided into thermoelectric generation that generates electric energy and thermoelectric cooling/heating that inversely causes a temperature difference across by electric power supply.

Data show that at present, the scheme aiming at the multilayer design of the thermoelectric semiconductor module at home and abroad mainly comprises that a middle layer ceramic substrate is connected up and down by adopting a lead, or other conductive materials are added in a punching way in the middle of the middle layer ceramic substrate to form the circuit communication between the lowest layer and the uppermost layer. The wire connection is adopted, the size of the product can exceed a lot, and the length and width precision requirements of the product size are difficult to control; the mode of punching in the middle and adding other conductive materials is adopted, so that the technical requirements on the process are more, and the cost is increased. For this purpose, a multilayer thermoelectric semiconductor module is provided with a special connection.

Chinese patent document CN103219457A discloses a "semiconductor thermoelectric module". The heat-conducting type solar water heater comprises a hot end substrate and a cold end substrate, wherein a P-N type galvanic couple pair and a flow guide strip are arranged between the hot end substrate and the cold end substrate, and the P-N type galvanic couple pair and the flow guide strip are welded, wherein the conduction thermal resistance of the hot end substrate is smaller than that of the cold end substrate. The heat transfer efficiency of the technical scheme is difficult to meet the application requirement, and the temperature difference range of the constructed semiconductor thermoelectric module is difficult to meet the requirement.

Disclosure of Invention

The utility model mainly solves the technical problems that the length and width precision of the product size is difficult to control in the original technical scheme, the process requirement is high, and the cost is increased, and provides a multilayer thermoelectric semiconductor module with a special connection mode.

The technical problem of the utility model is mainly solved by the following technical scheme: the utility model comprises three ceramic substrates which are arranged in parallel from top to bottom, wherein the upper ceramic substrate is connected with the middle ceramic substrate through upper-layer semiconductor particles, the lower ceramic substrate is connected with the middle ceramic substrate through lower-layer semiconductor particles, the lower ceramic substrate is connected with the upper ceramic substrate through N-type semiconductor particles and P-type semiconductor particles, and the lower ceramic substrate is provided with a lead. A ceramic substrate for supporting semiconductor particles, implemented as a heat absorbing terminal for absorbing heat energy and a heat releasing terminal for discharging heat energy; semiconductor particles for constructing PN thermocouple to form loop for current to pass through to realize heat transfer; the N-type semiconductor particles are used for being matched with the P-type semiconductor particles to realize the vertical conduction and connection; and the conducting wire is used for inputting current to construct a current loop.

Preferably, the ceramic substrate comprises an upper ceramic substrate, a middle ceramic substrate and a lower ceramic substrate, copper particles are uniformly arranged on the surfaces of the upper ceramic substrate, the middle ceramic substrate and the lower ceramic substrate, and soldering tin covers the surfaces of the upper ceramic substrate, the middle ceramic substrate and the lower ceramic substrate. The thermoelectric semiconductor upper and lower ceramic substrates and the P/N type semiconductor particles are fixed through a tin soldering process, the two slender P/N type particles play a role in connecting the upper and lower ceramic substrates, and the conducting wire is welded on the lower ceramic substrate to finally form a current loop.

Preferably, the lower ceramic substrate has lower semiconductor particles on the upper surface thereof, N-type semiconductor particles and P-type semiconductor particles are disposed on one side of the lower ceramic substrate, and a lead is disposed on the other side of the lower ceramic substrate. The upper surface of the lower ceramic substrate is provided with lower layer semiconductor particles for constructing a P-pole thermocouple, and the N-type semiconductor particles and the P-type semiconductor particles realize the connection of the upper ceramic substrate and the lower ceramic substrate.

Preferably, the middle ceramic substrate is provided with notches corresponding to the N-type semiconductor particles and the P-type semiconductor particles on one side of the lower ceramic substrate, and the lower surface of the middle ceramic substrate is connected with the lower semiconductor particles. The middle ceramic substrate is provided with notches for yielding the N-type semiconductor particles and the P-type semiconductor particles, and the lower surface of the middle ceramic substrate is connected with the lower layer of semiconductor particles to realize the transmission of electrons.

Preferably, the lower surface of the upper ceramic substrate is provided with upper semiconductor particles, the other ends of the N-type semiconductor particles and the P-type semiconductor particles arranged on one side of the lower ceramic substrate are connected with the lower surface of the upper ceramic substrate, and the upper surface of the middle ceramic substrate is connected with the upper semiconductor particles. The two slender P/N-type particles play a role in connecting the upper ceramic substrate and the lower ceramic substrate, so that the upper ceramic substrate and the lower ceramic substrate are communicated in a circuit.

Preferably, the semiconductor particles, the N-type semiconductor particles and the P-type semiconductor particles are bonded to copper particles provided on the surfaces of the upper ceramic substrate, the intermediate ceramic substrate and the lower ceramic substrate. Current is input through a wire and is transmitted through the copper particles and the semiconductor particles, and meanwhile the N-type semiconductor particles and the P-type semiconductor particles are communicated with the upper ceramic substrate and the lower ceramic substrate to form a loop, so that heat transmission is realized.

The utility model has the beneficial effects that: through design a breach on middle level ceramic substrate for the breach size is close with copper grain size on the lower ceramic substrate, and when the equipment product, each P type and N type semiconductor granule are placed to this place, plays upper and lower conducting connection effect, and the P type and the N type semiconductor granule of connecting from top to bottom not only can play the connecting conducting effect, also can play the refrigeration effect of heating, and other assembly process modes remain unchanged, reduce production processes, reduce cost.

Drawings

Fig. 1 is a block diagram of a circuit schematic connection structure of the present invention.

FIG. 2 is a schematic diagram of an intermediate ceramic substrate structure according to the present invention.

In the figure, 1 an upper ceramic substrate, 2 upper semiconductor particles, 3 an intermediate ceramic substrate, 4 lower semiconductor particles, 5 lower ceramic substrates, 6 wires, 7N type semiconductor particles and 8P type semiconductor particles.

Detailed Description

The technical scheme of the utility model is further specifically described by the following embodiments and the accompanying drawings.

Example (b): the multilayer thermoelectric semiconductor module with a special connection mode in the embodiment is shown in fig. 1 and comprises a ceramic substrate, wherein the ceramic substrate comprises an upper ceramic substrate 1, a middle ceramic substrate 3 and a lower ceramic substrate 5, copper particles are uniformly arranged on the surfaces of the upper ceramic substrate 1, the middle ceramic substrate 3 and the lower ceramic substrate 5, and soldering tin covers the surfaces of the upper ceramic substrate 1, the middle ceramic substrate 3 and the lower ceramic substrate 5. The ceramic substrate is used to support semiconductor particles, and is implemented as a heat absorption end for absorbing heat energy and a heat release end for discharging heat energy. Semiconductor particles, N-type semiconductor particles 7 and P-type semiconductor particles 8 are bonded to copper particles provided on the surfaces of the upper ceramic substrate 1, the intermediate ceramic substrate 3 and the lower ceramic substrate 5. Current is input through a wire and is transmitted through the copper particles and the semiconductor particles, and meanwhile the N-type semiconductor particles and the P-type semiconductor particles are communicated with the upper ceramic substrate and the lower ceramic substrate to form a loop, so that heat transmission is realized. The thermoelectric semiconductor upper and lower ceramic substrates and the P/N type semiconductor particles are fixed through a tin soldering process, the two slender P/N type particles play a role in connecting the upper and lower ceramic substrates, and the conducting wire is welded on the lower ceramic substrate to finally form a current loop.

The upper surface of the lower ceramic substrate 5 is provided with lower semiconductor particles 4, the semiconductor particles are used for constructing PN thermocouples, and heat transfer is realized through current. And one side of the lower ceramic substrate 5 is provided with N-type semiconductor particles 7 and P-type semiconductor particles 8, the other side of the lower ceramic substrate 5 is provided with a lead 6, and the lead 6 is used for inputting current to construct a current loop. And the N-type semiconductor particles 7 are used for being matched with the P-type semiconductor particles 8 to realize the vertical conduction and connection effect. The upper surface of the lower ceramic substrate is provided with lower layer semiconductor particles for constructing a P-pole thermocouple, and the N-type semiconductor particles and the P-type semiconductor particles realize the connection of the upper ceramic substrate and the lower ceramic substrate.

As shown in fig. 2, the positions of the N-type semiconductor particles 7 and the P-type semiconductor particles 8 on the side of the middle ceramic substrate 3 corresponding to the lower ceramic substrate 5 are provided with notches, and the lower surface of the middle ceramic substrate 3 is connected with the lower semiconductor particles 4. The middle ceramic substrate is provided with notches for yielding the N-type semiconductor particles and the P-type semiconductor particles, and the lower surface of the middle ceramic substrate is connected with the lower layer of semiconductor particles to realize the transmission of electrons.

The lower surface of the upper ceramic substrate 1 is provided with upper semiconductor particles 2, the other ends of the N-type semiconductor particles 7 and the P-type semiconductor particles 8 arranged on one side of the lower ceramic substrate 5 are connected with the lower surface of the upper ceramic substrate 1, and the upper surface of the middle ceramic substrate 3 is connected with the upper semiconductor particles 2. The two slender P/N-type particles play a role in connecting the upper ceramic substrate and the lower ceramic substrate, so that the upper ceramic substrate and the lower ceramic substrate are communicated in a circuit.

When the ceramic substrate is prepared, firstly, a layer of soldering tin is coated on the upper ceramic substrate 1, the middle ceramic substrate 3 and the lower ceramic substrate 5 through a jig; placing lower layer semiconductor particles 4, N-type semiconductor particles 7 and P-type semiconductor particles 8 on a lower ceramic substrate 5 through a jig, and placing upper layer semiconductor particles 2 on an upper ceramic substrate 1 through a jig; covering the middle ceramic substrate 3 on the combined body of the lower semiconductor particles 4 and the lower ceramic substrate 5, and finally covering the combined body of the upper ceramic substrate 1 and the upper semiconductor particles 2; then fixing the mixture in a process heating mode; finally, the lead 6 is soldered.

When the thermoelectric semiconductor device works, the upper and lower ceramic substrates of the thermoelectric semiconductor and the P/N type semiconductor particles are fixed through a tin soldering process, the two slender P/N type particles play a role in connecting the upper and lower ceramic substrates, the conducting wire is welded on the lower ceramic substrate, a current loop is finally formed, current is input through the conducting wire, electronic transmission is achieved through the copper particles and the semiconductor particles, meanwhile, the upper and lower ceramic substrates are communicated through the N type semiconductor particles and the P type semiconductor particles, the current loop is formed, and heat transmission is achieved.

The specific embodiments described herein are merely illustrative of the spirit of the utility model. Various modifications or additions may be made to the described embodiments or alternatives may be employed by those skilled in the art without departing from the spirit or ambit of the utility model as defined in the appended claims.

Although the terms ceramic substrate, semiconductor particles, etc. are used more herein, the possibility of using other terms is not excluded. These terms are used merely to more conveniently describe and explain the nature of the present invention; they are to be construed as being without limitation to any additional limitations that may be imposed by the spirit of the present invention.

Claims

1. A multilayer thermoelectric semiconductor module with a special connection mode is characterized by comprising three ceramic substrates which are arranged in parallel from top to bottom, wherein an upper ceramic substrate (1) is connected with a middle ceramic substrate (3) through upper-layer semiconductor particles (2), a lower ceramic substrate (5) is connected with the middle ceramic substrate (3) through lower-layer semiconductor particles (4), meanwhile, the lower ceramic substrate (5) is connected with the upper ceramic substrate (1) through N-type semiconductor particles (7) and P-type semiconductor particles (8), and wires (6) are arranged on the lower ceramic substrate (5).

2. The multilayer thermoelectric semiconductor module with special connection mode according to claim 1, wherein the ceramic substrates comprise an upper ceramic substrate (1), a middle ceramic substrate (3) and a lower ceramic substrate (5), the surfaces of the upper ceramic substrate (1), the middle ceramic substrate (3) and the lower ceramic substrate (5) are uniformly provided with copper particles, and the surfaces of the upper ceramic substrate (1), the middle ceramic substrate (3) and the lower ceramic substrate (5) are covered with soldering tin.

3. The multilayer thermoelectric semiconductor module according to claim 1, wherein the lower ceramic substrate (5) has lower semiconductor particles (4) on its upper surface, the lower ceramic substrate (5) has N-type semiconductor particles (7) and P-type semiconductor particles (8) on one side, and the lower ceramic substrate (5) has wires (6) on the other side.

4. The multilayer thermoelectric semiconductor module according to claim 3, wherein the intermediate ceramic substrate (3) is provided with notches corresponding to the N-type semiconductor particles (7) and the P-type semiconductor particles (8) on the side of the lower ceramic substrate (5), and the lower surface of the intermediate ceramic substrate (3) is connected with the lower semiconductor particles (4).

5. The multilayer thermoelectric semiconductor module according to claim 3, wherein the upper ceramic substrate (1) has an upper semiconductor particle (2) on its lower surface, the other ends of the N-type semiconductor particle (7) and the P-type semiconductor particle (8) on one side of the lower ceramic substrate (5) are connected to the lower surface of the upper ceramic substrate (1), and the upper surface of the middle ceramic substrate (3) is connected to the upper semiconductor particle (2).

6. The multilayer thermoelectric semiconductor module according to claim 2, wherein the semiconductor particles, the N-type semiconductor particles (7) and the P-type semiconductor particles (8) are bonded to copper particles provided on the surfaces of the upper ceramic substrate (1), the intermediate ceramic substrate (3) and the lower ceramic substrate (5).