CN216213503U - Chain type source coating device and diffusion system - Google Patents
Chain type source coating device and diffusion system Download PDFInfo
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- CN216213503U CN216213503U CN202122399104.2U CN202122399104U CN216213503U CN 216213503 U CN216213503 U CN 216213503U CN 202122399104 U CN202122399104 U CN 202122399104U CN 216213503 U CN216213503 U CN 216213503U
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Abstract
The utility model discloses a chain type source coating device, which is used for coating a layer of doping source on the surface of a silicon wafer and comprises a plurality of transmission shafts for transmitting the silicon wafer, a deposition chamber penetrating through the transmission shafts, a first groove body and a second groove body; the top of the deposition chamber is provided with a spray head, and the bottom of the deposition chamber is provided with a negative pressure fan; openings are formed in the two sides of the deposition chamber along the advancing direction of the silicon wafer; the first groove body is arranged inside the second groove body, and a plurality of ultrasonic atomizers are arranged at the bottom of the second groove body. The chain type source coating device improves the uniformity of doping source coating; the source coating process does not contact with the surface of the silicon wafer, so that the scratching rate of the silicon wafer is reduced; the chain type source coating device is matched with the chain type annealing device, is suitable for silicon wafers of any size, and realizes large-scale production of chain type diffusion gettering; the chain type source coating device is matched with the chain type annealing device and the laser doping device to realize the manufacture of the laser doping SE battery.
Description
Technical Field
The utility model relates to the technical field of solar cells, in particular to a chain type source coating device and a diffusion system.
Background
At present, in order to pursue higher conversion efficiency, the specification of the solar cell is gradually developed towards a large-size cell, so that the pipe diameter of a furnace pipe of a diffusion furnace used in a solar cell diffusion process is increased, and the problem caused by the increase of the space of the furnace pipe is more and more obvious. The sealing performance of the diffusion furnace tube is deteriorated, the debugging difficulty of the diffusion process is increased, the diffusion effect difference of silicon wafers positioned at different positions of the furnace tube is increased, the diffusion uniformity of a single silicon wafer is deteriorated, the conversion efficiency of the solar cell is reduced, and the uniformity is deteriorated.
In addition, the existing tubular diffusion needs automatic equipment to load and unload the silicon wafer, so that the production cost is greatly increased, large-scale continuous production cannot be realized, and the risk of increasing the fragment rate and the scratch rate of the silicon wafer is also brought by the automatic equipment.
Disclosure of Invention
The purpose of the utility model is as follows: the utility model aims to provide a chain type source coating device which can improve the uniformity of a silicon wafer surface doping source, improve the diffusion uniformity of the silicon wafer and realize large-scale industrialized continuous production.
Another object of the utility model is to propose a diffusion system.
The technical scheme is as follows: the utility model adopts the following technical scheme:
a chain type source coating device is used for coating a layer of doping source on the surface of a silicon wafer and comprises a plurality of transmission shafts for transmitting the silicon wafer, a deposition chamber penetrating through the transmission shafts, a first groove body and a second groove body; the top of the deposition chamber is provided with a spray head, and the bottom of the deposition chamber is provided with a negative pressure fan; openings are formed in the two sides of the deposition chamber along the advancing direction of the silicon wafer;
the first tank body is arranged inside the second tank body, and a plurality of ultrasonic atomizers are arranged at the bottom of the second tank body; the first tank body is used for containing a doping source solution, and the second tank body is used for containing an aqueous solution;
the first tank body is connected with the spray head through a pipeline; the ultrasonic atomizer converts the doping source in the first groove body into a fog drop shape and then sprays the fog drop shape on the surface of the silicon wafer through the spray head.
Preferably, the spray head corresponds to the air inlet of the negative pressure fan up and down.
Preferably, air curtain machines are arranged at openings at two sides of the deposition chamber.
Preferably, the shower head may be provided in plurality according to the size and number of the silicon wafers.
Preferably, the distance between the spray head and the silicon wafer is adjustable, and the spray head is used for controlling the spraying thickness and the spraying area of the doping source.
Preferably, a drying module is arranged on one side of the spray head, which is positioned at the outlet of the device, and is used for drying the doping source on the surface of the silicon wafer.
Preferably, one side of the nozzle, which is positioned at the inlet of the device, is provided with a first sensor, when the first sensor senses the silicon wafer, the ultrasonic atomizer starts to work, the doping source solution in the first groove body is converted into a droplet shape, and the droplet-shaped doping source is sprayed on the surface of the silicon wafer through the nozzle.
Preferably, a second sensor is further arranged inside the first tank body and used for sensing the liquid level of the doping source solution in the first tank body.
The utility model also provides a diffusion system which comprises the chain type source coating device and a chain type annealing device, wherein the chain type source coating device is used for coating the surface of the silicon chip with a layer of doping source, and the chain type annealing device is used for carrying out high-temperature propulsion on the doping source coated on the surface of the silicon chip.
The utility model also provides a diffusion system, which comprises the chain type source coating device, a chain type annealing device and a laser doping device; the chain type source coating device is used for coating a layer of doping source on the surface of the silicon wafer, the chain type annealing device is used for carrying out high-temperature propulsion on the doping source coated on the surface of the silicon wafer, and the laser doping device is used for carrying out laser doping on the silicon wafer to prepare an SE battery.
When the chain type source coating device works, a silicon wafer is conveyed forwards through the transmission shaft, when the first sensor senses the silicon wafer, the control system transmits a signal to the ultrasonic atomizer positioned at the bottom of the second tank body, the ultrasonic atomizer is started to work to convert the doping source in the first tank body into a fog drop shape, the fog drop-shaped doping source is filled in the pipeline and conveyed to the spray head at the top of the deposition chamber, the negative pressure fan at the bottom of the deposition chamber is started to drive the fog drop-shaped doping source to flow downwards, and the fog drop-shaped doping source is sprayed on the upper surface of the silicon wafer, so that the process of coating the doping source on the surface of the silicon wafer is realized. During spraying, the negative pressure fan enables the interior of the deposition chamber to be in a negative pressure state, and the fogdrop-shaped doping source runs downwards along the wind direction, so that the spraying uniformity is improved. And continuously transmitting the silicon wafer with the doping source coated on the surface to a drying module through a transmission shaft, drying the liquid doping source on the surface of the silicon wafer, and finishing the process of coating the doping source on the surface of the silicon wafer.
The diffusion system comprises the chain coating source device and the chain annealing device. And the chain type source coating device is used for continuously conveying the dried silicon wafer forwards through a transmission shaft and then enters a chain type annealing device, and the chain type annealing device carries out high-temperature propulsion on the doping source coated on the surface of the silicon wafer so as to complete the diffusion gettering process of the silicon wafer.
As another preferred scheme, the diffusion system comprises the chain coating source device, a chain annealing device and a laser doping device. The dried silicon wafer is continuously conveyed forwards through a transmission shaft by utilizing the chain type source coating device and enters a chain type annealing device, and the chain type annealing device carries out high-temperature propulsion on the doping source coated on the surface of the silicon wafer to complete the diffusion gettering process of the silicon wafer; and the silicon wafer is continuously conveyed forwards through the transmission shaft and enters the laser doping device to finish the manufacture of the laser doping SE.
Has the advantages that: compared with the prior art, the utility model has the following advantages:
(1) the chain type source coating device improves the uniformity of doping source coating;
(2) the chain type source coating device does not contact with the surface of the silicon wafer in the source coating process, so that the scratch rate of the silicon wafer is reduced to a certain extent;
(3) according to the diffusion system, the chain type source coating device is matched with the chain type annealing device, so that the diffusion system is suitable for silicon wafers of any size, the fragment rate caused by manual operation is avoided, and large-scale industrial production of chain type diffusion or chain type impurity absorption is realized;
(4) according to the other diffusion system, the chain type source coating device is matched with the chain type annealing device and the laser doping device, so that the manufacturing of the laser doping SE battery can be realized, the application range is wide, and the practical value is high.
Drawings
FIG. 1 is a schematic view of the construction of the chain type coating source device of the present invention.
Detailed Description
The technical solution of the present invention is further described below with reference to the accompanying drawings and examples.
Example 1
Referring to fig. 1, the chain type source coating device of the utility model is used for coating a layer of doping source on the surface of a silicon wafer 10, and comprises a plurality of transmission shafts 1 which are in chain transmission and used for transmitting the silicon wafer 10, a deposition chamber 2 which penetrates through part of the transmission shafts 1, a first tank body 3 and a second tank body 4. The top of the deposition chamber 2 is provided with a spray head 21, the bottom is provided with a negative pressure fan 22, the two sides are provided with openings 23 along the advancing direction of the silicon wafer, and the top of the openings 23 is provided with an air curtain machine 24.
The number of the spray heads 21 can be set to be a plurality according to the size of the silicon wafer 10 and the number of the single-row advancing silicon wafers, so that the doping sources can be uniformly sprayed on the surfaces of the silicon wafers. The spray head 21 corresponds to the air inlet of the negative pressure fan 22 up and down. Further, the distance between the nozzle 21 and the silicon wafer 10 can be adjusted up and down according to the amount of the doping source required by the surface of the silicon wafer 10, so that the spraying thickness and the spraying area of the doping source can be conveniently controlled, the silicon wafer 10 can be effectively covered, and various use environments can be met.
Wherein, first cell body 3 sets up the inside at second cell body 4, is provided with a plurality of ultrasonic atomization wares 5 between the bottom of first cell body 3 and the bottom of second cell body 4. The first tank 3 is used for containing doping source solution, and the second tank 4 is used for containing aqueous solution. The top of the first tank body 3 is connected with a spray head 21 through a pipeline, and the ultrasonic atomizer 5 converts the doping source solution of the first tank body 3 into fog drops and then sprays the fog drops on the surface of the silicon wafer 10 through the spray head 21.
Wherein, one side of the spray head 21 positioned at the outlet of the device is provided with a drying module 6 for drying the liquid doping source on the surface of the silicon wafer. One side of the spray head 21, which is positioned at the inlet of the device, is provided with a first sensor, when the first sensor senses a silicon wafer, the control system starts the ultrasonic atomizer 5 to work, the doping source solution in the first tank body 3 is converted into a fog drop shape, and the fog drop-shaped doping source is sprayed on the upper surface of the silicon wafer 10 through the spray head 21. The inside second sensor that still is provided with of first cell body 3 for the liquid level of response doping source solution, when sensing the liquid level and being less than the height of second sensor, control system sends early warning information, suggestion operating personnel supplyes doping source solution.
Referring to fig. 1, when the chain type source coating device of the utility model works, a silicon wafer 10 is conveyed forwards through a transmission shaft 1, when a first sensor senses the silicon wafer 10, a control system transmits a signal to an ultrasonic atomizer 5 positioned at the bottom of a second tank 4, the ultrasonic atomizer 5 is started to work to convert a doping source solution in the first tank 3 into a fogdrop shape, a negative pressure fan 22 at the bottom of a deposition chamber 2 is started to drive the fogdrop-shaped doping source to fill a pipeline and convey the fogdrop-shaped doping source to a spray head 21, the negative pressure fan 22 forms a downward traction pressure to enable the fogdrop-shaped doping source to continuously flow downwards to enter the deposition chamber 2, and at the moment, the surface of the silicon wafer is sprayed with the fogdrop-shaped doping source in the advancing process. During spraying, the negative pressure fan 22 makes the interior of the deposition chamber 2 be in a negative pressure state, the fogdrop-shaped doping source runs downwards along the wind direction, the two sides of the deposition chamber 2 are used for the opening 23 for the silicon wafer to enter and exit, and the top of the deposition chamber 2 is provided with the air curtain machine 24 for isolating the fogdrop-shaped doping source in the deposition chamber 2 from spreading and improving the spraying uniformity. The silicon wafer 10 with the doping source coated on the surface is continuously conveyed forward to the drying module 6 through the transmission shaft 1, the liquid doping source on the surface of the silicon wafer 10 is dried, and the process of coating the doping source on the surface of the silicon wafer 10 is completed.
Example 2
The diffusion system of the present invention comprises the chain type coating source device of example 1, and a chain type annealing device in sequence. The chain type source coating device is used for coating a layer of doping source on the surface of the silicon wafer, and the chain type annealing device is used for carrying out high-temperature propulsion on the doping source coated on the surface of the silicon wafer. The silicon wafer dried by the chain type source coating device in the embodiment 1 is continuously conveyed forwards along the transmission shaft and enters the chain type annealing device, and the chain type annealing device carries out high-temperature propulsion on the doping source coated on the surface of the silicon wafer to complete the chain type diffusion gettering process of the silicon wafer.
Example 3
The diffusion system of the present invention comprises the chained source coating device, the chained annealing device and the laser doping device of embodiment 1 in sequence. The chain type source coating device is used for coating a layer of doping source on the surface of a silicon wafer, the chain type annealing device is used for carrying out high-temperature propulsion on the doping source coated on the surface of the silicon wafer, and the laser doping device is used for carrying out laser doping on the silicon wafer to prepare an SE battery. The silicon wafer dried by the chain type source coating device in the embodiment 1 is continuously conveyed forwards along the transmission shaft and enters the chain type annealing device, and the chain type annealing device carries out high-temperature propulsion on the doping source coated on the surface of the silicon wafer to complete the chain type diffusion gettering process of the silicon wafer; and the silicon wafer is continuously conveyed forwards along the transmission shaft and enters the laser doping device, and the laser doping device performs laser doping on the surface of the silicon wafer to complete the manufacture of the laser doping SE.
The chain type source coating device can be matched with a chain type annealing device for use, has no pollution and low energy consumption, can realize continuous large-scale industrial production of chain type diffusion or chain type impurity absorption, and can reduce the scratch rate and the fragment rate. The chain type source coating device can be combined with a chain type annealing device and a laser doping device to realize the manufacture of the laser doping SE battery. Therefore, the chain type coating source device has wide application range and high practical value.
Claims (9)
1. A chain type source coating device is used for coating a layer of doping source on the surface of a silicon chip, and is characterized in that: the silicon wafer deposition device comprises a plurality of transmission shafts for transmitting silicon wafers, a deposition chamber penetrating through the transmission shafts, a first groove body and a second groove body; the top of the deposition chamber is provided with a spray head, and the bottom of the deposition chamber is provided with a negative pressure fan; openings are formed in the two sides of the deposition chamber along the advancing direction of the silicon wafer;
the first tank body is arranged inside the second tank body, and a plurality of ultrasonic atomizers are arranged at the bottom of the second tank body; the first tank body is used for containing a doping source solution, and the second tank body is used for containing an aqueous solution;
the first tank body is connected with the spray head through a pipeline; the ultrasonic atomizer converts the doping source in the first groove body into a fog drop shape and then sprays the fog drop shape on the surface of the silicon wafer through the spray head.
2. A chained source device according to claim 1, wherein: the spray head corresponds to the air inlet of the negative pressure fan up and down.
3. A chained source device according to claim 2, wherein: and air curtain machines are arranged at openings at two sides of the deposition chamber.
4. A chained source device according to claim 3, wherein: the number of the spray heads can be set according to the size and the number of the silicon wafers.
5. The chained source device of claim 4, further comprising: the distance between the spray head and the silicon wafer is adjustable, and the spray head is used for controlling the spraying thickness and the spraying area of the doping source.
6. A chained source device according to claim 1, wherein: and a drying module is arranged on one side of the spray head positioned at the outlet of the device and is used for drying the doping source on the surface of the silicon wafer.
7. A chained source device according to claim 1, wherein: one side of the spray head, which is positioned at the inlet of the device, is provided with a first sensor, when the first sensor senses a silicon wafer, the ultrasonic atomizer starts to work, the doping source solution in the first groove body is converted into a fog drop shape, and the fog drop-shaped doping source is sprayed on the surface of the silicon wafer through the spray head.
8. A chained source device according to claim 1, wherein: the first tank body is internally provided with a second sensor, and the second sensor is used for sensing the liquid level of the doping source solution in the first tank body.
9. A diffusion system, characterized by: the chain type coating source device of any one of claims 1 to 8, wherein the chain type coating source device is used for coating a layer of doping source on the surface of a silicon wafer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122399104.2U CN216213503U (en) | 2021-09-30 | 2021-09-30 | Chain type source coating device and diffusion system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122399104.2U CN216213503U (en) | 2021-09-30 | 2021-09-30 | Chain type source coating device and diffusion system |
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| Publication Number | Publication Date |
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| CN216213503U true CN216213503U (en) | 2022-04-05 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202122399104.2U Active CN216213503U (en) | 2021-09-30 | 2021-09-30 | Chain type source coating device and diffusion system |
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| CN (1) | CN216213503U (en) |
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2021
- 2021-09-30 CN CN202122399104.2U patent/CN216213503U/en active Active
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