CN212725343U - Silicon chip chain type diffusion oxidation dual-purpose equipment - Google Patents
Silicon chip chain type diffusion oxidation dual-purpose equipment Download PDFInfo
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- CN212725343U CN212725343U CN202022067146.1U CN202022067146U CN212725343U CN 212725343 U CN212725343 U CN 212725343U CN 202022067146 U CN202022067146 U CN 202022067146U CN 212725343 U CN212725343 U CN 212725343U
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Abstract
The utility model discloses a silicon chip chain diffusion oxidation dual-purpose equipment, a serial communication port, including kiln main part (2) that forms kiln passageway, be provided with a plurality of ceramic rod (3) that span kiln passageway width direction in the kiln passageway side by side, ceramic rod (3) top of kiln main part (2) entry end is provided with phosphoric acid spraying equipment (1), set up kiln main part (2) into variable functional area (4) from entry end to exit end in proper order, high temperature diffusion oxidation zone (5) and hydrologic cycle cooling district (6), at variable functional area (4), high temperature diffusion oxidation zone (5), hydrologic cycle cooling district (6) communicate gas conveying equipment (8) respectively, hydrologic cycle cooling district (6) still communicate water conveying equipment (9). The equipment can be used for two processes of diffusion and oxidation, simplifies production equipment and saves production cost.
Description
Technical Field
The utility model relates to a silicon chip high temperature oxidation equipment technical field specifically discloses a silicon chip chain diffusion oxidation dual-purpose equipment.
Background
At present, the manufacturing of silicon wafers into solar cells mainly comprises the following steps: texturing, diffusion, etching, film coating, printing and sintering. Wherein, the diffusion refers to doping on the surface layer of the silicon wafer to prepare a PN junction structure. The traditional diffusion process is tubular diffusion, silicon wafers are sequentially placed in quartz boats, the quartz boats loaded with the silicon wafers are pushed into a diffusion furnace tube of a tubular diffusion furnace, and the temperature of the diffusion furnace tube is raised to a first preset temperature; introducing process gas into the diffusion furnace tube, and keeping the equilibrium temperature of the diffusion furnace tube for a certain time to perform constant source diffusion; stopping introducing the process gas, and maintaining the equilibrium temperature of the diffusion furnace tube for a certain time to perform limited source diffusion; and when the temperature of the diffusion furnace tube is reduced to a second preset temperature, taking out the silicon wafer to finish diffusion. The diffusion process is a batch process and cannot be used for continuous production.
On the other hand, with the continuous upgrade of the domestic production process of the crystalline silicon solar cell, in order to prevent the front phosphorosilicate glass layer of the SE silicon wafer from being damaged during polishing, a SiOx mask needs to be added on the surface of the silicon wafer to assist polishing before polishing. The Chinese utility model patent with application number CN201110446243.4 provides a high-temperature dry double-sided oxidation process for a crystalline silicon wafer, which comprises the following steps: (1) entering a boat: after being loaded in a boat, the crystal silicon wafer is pushed into an oxidation furnace pipe; (2) temperature stabilization: adjusting the temperature in the oxidation furnace pipe; (3) and (3) oxidation: injecting oxygen and nitrogen into the oxidation furnace to oxidize the silicon wafer; (4) and (3) stabilizing: stopping supplying oxygen into the oxidation furnace after the oxidation is finished, and adjusting the flow of the nitrogen and the temperature in the oxidation furnace; (5) and (4) boat returning: and withdrawing the quartz boat or the graphite boat filled with the oxidized silicon wafers from the oxidation furnace tube. The process has low cost, simple requirements on process equipment and no need of additional equipment, and the crystal silicon wafer is placed in an oxidation furnace tube for high-temperature dry oxidation to grow a layer of oxidation film before plating the passivation film, and the oxidation film and the silicon nitride film form a double-layer film with excellent performance, and the double-layer film has excellent passivation and antireflection performances. However, the process actually implies the steps of opening the boat cover, placing the silicon wafer into the boat, covering the boat, taking the boat out, and opening the boat to take the silicon wafer, which is simple, but the process is complicated, time-consuming and labor-consuming for mass production in factories.
Therefore, a novel diffusion and high-temperature oxidation device is combined with a novel process mode, a phosphorosilicate glass layer and a compact 2-10 nm oxide layer are formed on the surface of a silicon wafer, and a heavily doped region of laser SE can be protected from being corroded in the alkali polishing process, so that the efficiency of an SE + alkali polishing battery is improved, and the stability of the efficiency is ensured.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the problem that the traditional diffusion equipment, high-temperature oxidation equipment and process are intermittent and cannot be continuously produced in the prior art, and provide a continuous chain type diffusion and oxidation dual-purpose equipment.
The utility model discloses the concrete technical scheme who adopts as follows: the utility model provides a silicon chip chain diffusion oxidation dual-purpose equipment, a serial communication port, including the kiln main part that forms the kiln passageway, be provided with a plurality of ceramic sticks that span kiln passageway width direction side by side in the kiln passageway, the ceramic stick top at kiln main part entry end is provided with phosphoric acid spraying equipment, set up the kiln main part into variable functional area, high temperature diffusion oxidation area and water circulative cooling district from entry end to exit end in proper order, at variable functional area, high temperature diffusion oxidation area, water circulative cooling district communicates gas conveying equipment respectively, water circulative cooling district still communicates water conveying equipment.
Through the technical scheme, when the equipment is used for a phosphorus diffusion process, the equipment can be configured into a phosphoric acid spraying area, a phosphoric acid dehydration area (a variable function area is actually a phosphoric acid dehydration area), a high-temperature diffusion area (the high-temperature diffusion oxidation area only realizes a diffusion function at the moment) and a water circulation cooling area, the phosphoric acid spraying equipment can break up a molecular structure containing a mixed solution of phosphoric acid, ethanol and water into fog, the fog is sprayed to the silicon surface, and then the phosphoric acid dehydration area is changed into P after the phosphoric acid dehydration2O5Deposited on the silicon surface in the high temperature diffusion region P2O5React with silicon to form silicon oxide and phosphorus in the direction of phosphorusAnd (3) diffusing the silicon chip, conveying high-purity nitrogen in a phosphoric acid dehydration region, conveying high-purity nitrogen in a high-temperature diffusion oxidation region, and introducing cold air in a water circulation cooling region. When the device is used for a high-temperature oxidation process, the device can be configured into a temperature-rising preheating zone (namely the function of the variable function zone is changed into a temperature-rising preheating zone), a high-temperature oxidation zone (at the moment, the high-temperature diffusion oxidation zone only realizes the function of high-temperature oxidation), and a water circulation cooling zone, wherein high-purity oxygen is introduced into the temperature-rising preheating zone and the high-temperature oxidation zone, and cold air is introduced into the water circulation cooling zone.
Further, the top of the kiln main body is communicated with an exhaust fan. The exhaust fan is used for discharging the waste gas in the furnace.
Furthermore, the exhaust fan is communicated with the top of the variable function area and the top of the high-temperature diffusion oxidation area of the kiln body. The two areas are filled with functional gas, so the waste gas is relatively concentrated in the two areas, and the effect of installing the exhaust fan above the two areas is best.
Further, the total length of the dual-purpose equipment is 8.1m, and the working width in the furnace is 2170 mm. When used in a high temperature oxidation process, the length of the device actually worked is about 7m, since the phosphoric acid spraying equipment at the inlet end is not used.
The utility model has the advantages that: by adding the spraying equipment and improving the atmosphere pipeline in the furnace, the diffusion and oxidation processes are processed by the same equipment, and the equipment can be manufactured in sections and then combined together. In actual use, according to the requirements of the solar silicon wafer production process, the solar silicon wafer is simply selected and combined. The equipment for producing the solar silicon wafer is greatly simplified, one equipment has two purposes, and the equipment cost is saved.
Drawings
Fig. 1 is a schematic structural diagram of the dual-purpose device of the present invention.
In the figure, 1, a spraying device; 2. a kiln body; 3. a ceramic stick; 4. a variable functional region; 5. a high temperature diffusion oxidation zone; 6. a water circulation cooling zone; 7. an exhaust fan; 8. a gas delivery device; 9. a water delivery device.
Detailed Description
Examples
As shown in fig. 1, a silicon wafer chain type diffusion and oxidation dual-purpose device comprises a kiln main body 2 forming a kiln channel, a plurality of ceramic sticks 3 stretching across the width direction of the kiln channel are arranged in the kiln channel side by side, a phosphoric acid spraying device 1 is arranged above the ceramic sticks 3 at the inlet end of the kiln main body 2, the kiln main body 2 is sequentially arranged into a variable functional area 4, a high-temperature diffusion oxidation area 5 and a water circulation cooling area 6 from the inlet end to the outlet end, the variable functional area 4, the high-temperature diffusion oxidation area 5 and the water circulation cooling area 6 are respectively communicated with a gas conveying device 8, and the water circulation cooling area 6 is also communicated with a water conveying device 9. The top of the kiln main body 2 is communicated with an exhaust fan 7. The exhaust fan 7 is used for exhausting the waste gas in the furnace. In particular, the exhaust fan 7 is communicated with the top of the variable function zone 4 and the high-temperature diffusion oxidation zone 5 of the kiln body 2. The two areas are filled with functional gas, so the waste gas is relatively concentrated in the two areas, and the effect of installing the exhaust fan 7 above the two areas is the best.
When the equipment is used for a phosphorus diffusion process, the equipment can be configured as a phosphoric acid spraying area, a phosphoric acid dehydration area (the variable function area 4 is actually a phosphoric acid dehydration area), a high-temperature diffusion area (the high-temperature diffusion oxidation area 5 only realizes a diffusion function at this moment) and a water circulation cooling area 6, the phosphoric acid spraying equipment 1 can break up a molecular structure containing a mixed liquid of phosphoric acid, ethanol and water into mist, the mist is sprayed on the surface of silicon, then the phosphoric acid is dehydrated in the phosphoric acid dehydration area to be changed into P2O5 to be deposited on the surface of the silicon, the silicon oxide and phosphorus are generated by reaction with the silicon in the high-temperature diffusion area P2O5, the phosphorus is diffused into the silicon wafer, high-purity nitrogen is conveyed in the phosphoric acid dehydration area, high-purity nitrogen is conveyed in the high-temperature diffusion oxidation. In the phosphoric acid diffusion process, the temperature of a phosphoric acid dehydration zone is about 350 ℃, the temperature of a high-temperature diffusion zone is about 900 ℃, and cold air and circulating cooling water are introduced into a water circulating cooling zone 6 to cool the temperature of a silicon wafer to below 50 ℃.
When the device is used for a high-temperature oxidation process, the device can be configured as a temperature-rising preheating zone (namely the function of the variable function zone 4 is changed into a temperature-rising preheating zone), a high-temperature oxidation zone (at the moment, the high-temperature diffusion oxidation zone 5 only realizes the function of high-temperature oxidation), and a water circulation cooling zone 6, wherein high-purity oxygen is introduced into the temperature-rising preheating zone and the high-temperature oxidation zone, and cold air is introduced into the water circulation cooling zone 6. At the moment, the temperature of the heating area is 350 ℃, the temperature of the high-temperature oxidation is about 750 ℃, cold air is introduced into the water circulation cooling area 6, and the silicon wafer is cooled by water cooling and air cooling, so that the temperature of the silicon wafer is below 50 ℃.
The actual total length of the dual-purpose equipment is 8.1m, the working width in the furnace is 2170mm, so that the online chain transmission of 10 different silicon wafer sizes (166-220 mm) can be met, the working transmission speed is set to be 3.5m/min, and the speed is adjustable. But when used in a high temperature oxidation process the length over which the apparatus actually functions is about 7 m.
The spraying device 1 can be realized by a device in the prior art, for example, an ultrasonic atomization spraying process, and an ultrasonic atomizer breaks up a molecular structure containing a mixed solution of phosphoric acid, ethanol and water into a mist by using electronic high-frequency oscillation and sprays the mist onto the surface of the silicon.
Prior art delivery devices, such as conventional gas supplies plus plumbing inputs, may also be used for the gas delivery device 8.
Claims (4)
1. The utility model provides a silicon chip chain diffusion oxidation dual-purpose equipment, a serial communication port, including kiln main part (2) that forms the kiln passageway, be provided with a plurality of ceramic rod (3) that span kiln passageway width direction side by side in the kiln passageway, ceramic rod (3) top at kiln main part (2) entry end is provided with phosphoric acid spraying equipment (1), set up kiln main part (2) into variable functional area (4), high temperature diffusion oxidation zone (5) and water circulation cooling zone (6) from entry end to exit end in proper order, at variable functional area (4), high temperature diffusion oxidation zone (5), water circulation cooling zone (6) communicate gas conveying equipment (8) respectively, water circulation cooling zone (6) still communicate water conveying equipment (9).
2. The silicon wafer chain type diffusion and oxidation dual-purpose equipment as claimed in claim 1, wherein the top of the kiln main body (2) is communicated with an exhaust fan (7).
3. The silicon wafer chain type diffusion and oxidation dual-purpose equipment is characterized in that the exhaust fan (7) is communicated with the top of the variable function area (4) and the high-temperature diffusion and oxidation area (5) of the kiln body (2).
4. The dual-purpose equipment for silicon wafer chain diffusion oxidation as claimed in any one of claims 1 to 3, wherein the total length of the dual-purpose equipment is 8.1m, and the working width in the furnace is 2170 mm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202022067146.1U CN212725343U (en) | 2020-09-18 | 2020-09-18 | Silicon chip chain type diffusion oxidation dual-purpose equipment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202022067146.1U CN212725343U (en) | 2020-09-18 | 2020-09-18 | Silicon chip chain type diffusion oxidation dual-purpose equipment |
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| CN212725343U true CN212725343U (en) | 2021-03-16 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113345981A (en) * | 2021-06-01 | 2021-09-03 | 常州时创能源股份有限公司 | Chain type equipment for preparing selective emitter |
| WO2022193579A1 (en) * | 2021-03-19 | 2022-09-22 | 常州时创能源股份有限公司 | Diffusion apparatus |
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2020
- 2020-09-18 CN CN202022067146.1U patent/CN212725343U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022193579A1 (en) * | 2021-03-19 | 2022-09-22 | 常州时创能源股份有限公司 | Diffusion apparatus |
| CN113345981A (en) * | 2021-06-01 | 2021-09-03 | 常州时创能源股份有限公司 | Chain type equipment for preparing selective emitter |
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