CN216156010U

CN216156010U - Material suction device and single crystal furnace material suction equipment

Info

Publication number: CN216156010U
Application number: CN202121956026.5U
Authority: CN
Inventors: 杜超; 邓浩; 李侨; 韩伟; 董升
Original assignee: Longi Green Energy Technology Co Ltd
Current assignee: Longi Green Energy Technology Co Ltd
Priority date: 2021-08-19
Filing date: 2021-08-19
Publication date: 2022-04-01
Anticipated expiration: 2031-08-19

Abstract

The utility model discloses a material suction device and single crystal furnace material suction equipment, relates to the technical field of crystal bar manufacturing, and aims to solve the problem of impurities in a single crystal furnace. The material suction device comprises an accommodating component which is provided with a closed accommodating cavity; the suction pipe assembly is connected to the containing assembly and provided with a first end portion and a second end portion which are opposite to each other, the first end portion is located in the containing cavity and communicated with the containing cavity, the second end portion of the suction pipe assembly is located outside the containing cavity, the suction pipe assembly is further provided with a suction channel communicated with the first end portion and the second end portion, and the suction channel is communicated with the containing cavity and the containing assembly. As the impurity silicon material in the single crystal furnace can be sucked by the sucking device, new silicon material can be continuously added, and the sustainable charging production of the single crystal furnace is realized. The single crystal furnace material suction equipment comprises the material suction device, silicon materials are pressed into the containing cavity by utilizing pressure difference, and the crystal pulling process is continued after the silicon materials are removed from the single crystal furnace.

Description

Material suction device and single crystal furnace material suction equipment

Technical Field

The utility model relates to the technical field of crystal bar manufacturing, in particular to a material suction device and single crystal furnace material suction equipment.

Background

The single crystal furnace is equipment for manufacturing the silicon single crystal rod, and the single crystal furnace usually adopts a multiple pulling method to prepare the silicon single crystal rod, namely, silicon materials can be continuously added for multiple times in the single crystal furnace for crystal pulling. However, with the increase of the feeding amount, the exhaust system of the single crystal furnace is not smooth due to volatile blockage, so that the carbon content in the thermal field is continuously increased. And most of the impurity segregation coefficients of the silicon melt are less than 1, impurities at the bottom of the crucible in the single crystal furnace are continuously enriched due to the segregation effect, the service life of minority carriers of the single crystal silicon rod is continuously reduced due to the enriched impurities, and the quality of the single crystal silicon rod is influenced, so that the silicon melt cannot be continuously fed, and the crystal pulling of the next furnace can be continued only by stopping the crystal pulling and the furnace opening cleaning at certain intervals.

SUMMERY OF THE UTILITY MODEL

The utility model aims to provide a material suction device and single crystal furnace material suction equipment, which are used for sucking and removing impurities in a single crystal furnace so as to realize sustainable feeding production of the single crystal furnace.

In order to achieve the above purpose, the utility model provides the following technical scheme:

the utility model provides a inhale material device, is applied to single crystal growing furnace, inhales the material device and includes:

the accommodating component is provided with a closed accommodating cavity;

the suction pipe assembly is connected to the containing assembly and provided with a first end portion and a second end portion which are opposite to each other, the first end portion is located in the containing cavity and communicated with the containing cavity, the second end portion of the suction pipe assembly is located outside the containing cavity, the suction pipe assembly is further provided with a suction channel communicated with the first end portion and the second end portion, and the suction channel is communicated with the containing cavity and the containing assembly.

During operation, take out the crystal bar in the single crystal furnace earlier, under the circumstances of not shutting down, can put into the single crystal furnace with the suction device, put down the suction device until the second end of suction tube subassembly stretches into the silicon material in the single crystal furnace, hold the chamber and pass through the suction channel intercommunication with the silicon material, later, adjust the pressure in the single crystal furnace, make the pressure in the single crystal furnace be greater than the pressure in holding the chamber of holding the subassembly, utilize pressure differential to press the silicon material in the single crystal furnace into through the suction tube subassembly and hold the intracavity and collect, until holding the intracavity and fill up the silicon material after, take out the suction device, add new silicon material and continue to carry out the crystal pulling process. As the impurity silicon material in the crucible of the single crystal furnace is absorbed, new silicon material without impurities can be continuously added, the continuous charging production of the single crystal furnace is realized, and the quality of the monocrystalline silicon is ensured.

Optionally, in the above suction device, the accommodating assembly includes:

a container to which the straw assembly is connected;

the cover plate is sealed at the open end of the container, and the cover plate and the container are sealed to form an accommodating cavity.

Optionally, in the above-mentioned suction device, the interior of the container is at least partially provided with a liner for contacting with the charged material, and the receiving cavity is at least partially defined by the liner.

So set up, the container had both guaranteed external structure intensity, and simultaneously through inside lining and material contact, impurity can not introduced to the material of inside lining, and the inside lining is full of after expecting greatly, can take out the inside lining alone, changes new inside lining, and the container can used repeatedly, has saved use cost.

Optionally, in the above-mentioned suction device, there is a gap between the outer surface of the liner and the inner surface of the container, and the width of the gap is 3mm to 10 mm. So set up, prevent that inside lining and container from leading to inside lining and container to combine closely unable separation because of the thermal deformation volume difference.

Optionally, in the above-mentioned suction device, the material of the container is any one or a combination of more than one of graphite, carbon and ceramic, and the material of the lining is any one or a combination of more than one of quartz ceramic, sapphire and toughened ceramic. So set up, the container can bear high temperature and collision to protect and support the inside lining better, the inside lining can not introduce the impurity different with the silicon material.

Optionally, in the above suction device, the suction pipe assembly includes an inner suction pipe, an outer suction pipe and a connection sleeve; the inner suction pipe and the outer suction pipe are connected through a connecting sleeve, the connecting sleeve is sleeved outside the connecting part of the inner suction pipe and the outer suction pipe, and a suction channel is formed inside the inner suction pipe and the outer suction pipe.

So set up, the material of inner suction pipe and outer straw can set up alone, and the different materials of inner suction pipe can be selected according to the difference of silicon material, and inner suction pipe and material can be the same with silicon material, avoids in the use, introduces new impurity.

Optionally, in the above suction device, the inner suction pipe is located in the accommodating assembly, one end of the inner suction pipe, which extends into the accommodating cavity, is a first end portion, and a preset height is provided between the first end portion and the bottom of the accommodating cavity, and the preset height can prevent the sucked material from flowing back from the first end portion of the inner suction pipe; the outer suction pipe is positioned outside the accommodating component; any one or more of the inner suction pipe, the outer suction pipe and the connecting sleeve are connected with the accommodating component.

So set up, can ensure that the suction tube subassembly is inhaled the material to holding the intracavity, and because there is preset the height between the first end of internal suction pipe and the bottom that holds the chamber, hold the material of intracavity and can not follow the internal suction pipe backward flow.

Optionally, in the above suction device, the connecting sleeve is located in the accommodating cavity, and an outer diameter of the connecting sleeve is larger than a diameter of the through hole of the accommodating component for extending out of the outer suction pipe. So set up, the straw subassembly passes through the adapter sleeve and is spacing in the holding subassembly, plays T type couple effect, prevents to drop because the silicon liquid solidifies the inflation and leads to the straw subassembly to follow the holding subassembly.

Optionally, in the above material suction device, the connection sleeve and the inner suction pipe are fixed by sintering with a ceramic adhesive or pouring with quartz slurry; the connecting sleeve and the outer suction pipe are fixed by sintering ceramic binder or pouring quartz slurry. So set up to improve the joint strength and the sealing performance of straw subassembly and holding subassembly.

Optionally, in the above suction device, the material of the inner suction pipe and the outer suction pipe is any one or a combination of more than one of silicon, sapphire, silicon carbide, quartz glass and quartz ceramic, and the material of the inner suction pipe and the material of the outer suction pipe are the same or different.

The utility model also provides single crystal furnace material suction equipment which comprises a furnace shell, a crucible and the material suction device, wherein the crucible is positioned in the furnace shell, the crucible contains silicon materials, and the second end of the suction pipe component of the material suction device is immersed in the silicon materials in the crucible. Compared with the prior art, the beneficial effects of the single crystal furnace material suction device provided by the utility model are the same as those of the material suction device in the technical scheme, and the detailed description is omitted here.

Drawings

The accompanying drawings, which are included to provide a further understanding of the utility model and are incorporated in and constitute a part of this specification, illustrate embodiments of the utility model and together with the description serve to explain the utility model and not to limit the utility model. In the drawings:

FIG. 1 is a schematic structural diagram of a material suction device in an embodiment of the present invention;

FIG. 2 is a schematic structural diagram of a single crystal furnace material suction device in an embodiment of the utility model;

FIG. 3 is a schematic view of a work flow of a single crystal furnace material suction device in an embodiment of the utility model.

Reference numerals:

a-a material suction device, 1-a containing assembly, 11-a container, 12-a cover plate, 13-a lining, 131-a containing cavity, 2-a fixing piece, 3-a suction pipe assembly, 31-an inner suction pipe, 32-a connecting sleeve, 33-an outer suction pipe, 34-a suction channel, 4-a hoisting rope, 5-an auxiliary chamber, 6-a furnace barrel, 7-a heating device, 8-a silicon material, 9-a crucible and 10-a valve body.

Detailed Description

In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the utility model and are not intended to limit the utility model.

It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or be indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or be indirectly connected to the other element.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise. The meaning of "a number" is one or more unless specifically limited otherwise.

In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the field of crystal bar manufacturing, a single crystal furnace is equipment for manufacturing a single crystal silicon rod, the single crystal furnace mainly comprises an upper transmission mechanism, an auxiliary chamber 5, a valve body 10, a furnace tube 6 and a lower transmission mechanism which are sequentially arranged from top to bottom, wherein the upper transmission mechanism is used for lifting a crystal seed, the auxiliary chamber 5 is communicated with the furnace tube 6, the valve body 10 is arranged between the auxiliary chamber 5 and the furnace tube 6 and used for controlling the communication between the auxiliary chamber 5 and the furnace tube 6, a heating device 7 and a crucible 9 are arranged in the furnace tube 6 and used for heating a silicon material 8 in the crucible 9, and the lower transmission mechanism is connected with the crucible 9 and used for controlling the movement of the crucible 9. The existing single crystal furnace usually adopts a multiple pulling method to prepare a single crystal silicon rod, namely, silicon materials can be continuously added in the single crystal furnace for pulling for multiple times, but along with the rising of the feeding amount, an exhaust system of the single crystal furnace is blocked by volatile matters, so that the exhaust gas is not smooth, the carbon content is continuously increased, most of impurity segregation coefficients of molten silicon are less than 1, impurities at the bottom of a crucible 9 of the single crystal furnace are continuously enriched due to the segregation effect, raw materials for enriching the impurities, such as the raw materials for pulling the single crystal rod, the crystallization rate is not high, or the minority carrier lifetime of the single crystal silicon rod is continuously reduced, the quality of the single crystal silicon rod is influenced, therefore, the feeding cannot be continuously carried out, and the pulling of the next furnace can be continued only after the pulling of the single crystal rod is stopped and the furnace is opened for cleaning at certain period.

In view of the above, referring to fig. 1 and fig. 2, a material suction device a for a single crystal furnace according to an embodiment of the present invention includes a receiving assembly 1 and a suction pipe assembly 3. Wherein, the accommodating component 1 is internally provided with a closed accommodating cavity 131, and the accommodating cavity 131 is used for collecting the silicon material 8 in the single crystal furnace; the straw assembly 3 is connected to the accommodating assembly 1, the straw assembly 3 has a first end and a second end which are opposite, the first end is located in the accommodating cavity 131 and communicated with the accommodating cavity 131, the second end of the straw assembly 3 is located outside the accommodating cavity 131, the straw assembly 3 further has a suction channel 34 communicating the first end with the second end, and the suction channel 34 is communicated with the accommodating cavity 131 and the outside of the accommodating assembly 1.

When the material suction device A works, a crystal bar which is drawn in the single crystal furnace is taken out firstly, under the condition that a heater and the like of the single crystal furnace are not stopped, the material suction device A can be placed in the single crystal furnace, the material suction device A is placed downwards until the second end of the material suction pipe component 3 extends into a silicon material 8 in the single crystal furnace, then, the pressure in the single crystal furnace is adjusted, the pressure in the single crystal furnace is larger than the pressure in a containing cavity 131 of the containing component 1, the silicon material 8 in the single crystal furnace is pressed into the containing cavity 131 through the material suction pipe component 3 by utilizing the pressure difference for collection, and the material suction device A is taken out until the containing cavity 131 is filled with the silicon material, and the material suction device A can continue to feed for the crystal pulling process.

According to the structure and the implementation process, as the silicon material 8 in the crucible 9 of the single crystal furnace is sucked by the sucking device A, new silicon material without impurities can be continuously added into the single crystal furnace, the continuous charging production of the single crystal furnace is realized, the crystal pulling time of the single crystal furnace after starting up for one time is prolonged, the effective crystal pulling time is increased, and the quality of the monocrystalline silicon is ensured. The material suction device can also be used for sucking materials and detecting scenes such as sampling.

As shown in fig. 1, in the present embodiment, the first end of the straw assembly 3 can extend into the accommodating chamber 131 from the bottom of the container assembly 1. So, the straw assembly 3 can adopt the straight tube structure, and the axis of straw assembly 3 is on a parallel with the axial of holding subassembly 1, and simple structure is difficult to bump with the inner wall of single crystal growing furnace at the lift in-process. And after the first end part of the sucker component 3 extends into the accommodating cavity 131 from the bottom of the accommodating component 1, the first end part is close to the top of the accommodating cavity 131, and a gap exists between the port of the first end part and the top, so that silicon material enters the accommodating cavity 131 from the sucker component 3. Under this structure, the first end of straw subassembly 3 is for predetermineeing the height apart from the distance that holds the chamber 131 bottom, can avoid holding the silicon material backward flow of collecting in the chamber 131 to the straw subassembly 3 in.

As shown in fig. 1, the present embodiment provides a specific accommodating assembly 1, which includes a container 11 and a cover plate 12, wherein the straw assembly 3 is connected to the container 11, the container 11 has an open end and a closed end, and the closed end is provided with a through hole for passing through the second end of the straw assembly 3; the cover 12 is closed at the open end of the container 11, and the cover 12 and the container 11 are closed to form a containing cavity 131. The cover plate 12 is detachably connected to the container 11, specifically, the cover plate 12 is fixed to the container 11 by a fixing member 2, such as a screw or a bolt, or detachably mounted by a fastening member, so that the container 11 is conveniently opened to take out the sucked silicon material. The cover plate 12 is provided with a hook which is used for being connected with the hoisting rope 4, so that the whole material suction device A can be conveniently hoisted and lifted in the single crystal furnace.

Further, in this embodiment, the inner part of the container 11 is at least partially provided with a liner 13 for contacting with the filled material, the material of the liner 13 does not introduce impurities, and the accommodating cavity is at least partially defined by the liner 13. The liner 13 is matched with the inner shape of the container 11, and the cover plate 12 is covered on the open end of the container 11 to ensure that at least a closed accommodating cavity 131 is formed with the liner 13. The first end of the straw assembly 3 extends into the receiving cavity 131 of the liner 13 and the second end of the straw assembly 3 extends outside the liner 13 and outside the container 11. The vessel 11 has sufficient strength to support the protective lining 13 and prevent the lining 13 from softening and deforming when heated in the single crystal furnace. The cover plate 12 is opened, the lining 13 is put in or taken out from the open end of the container 11, the lining 13 cannot be reused after one-time material suction is completed, after the lining 13 with the collected silicon material is taken out from the container 11, a new lining 13 is put in the container 11 when the material is sucked next time, the container 11 can be reused, the whole material suction device A is not required to be replaced, and therefore the use cost is saved.

Of course, in some embodiments, the container 11 and liner 13 may also be of unitary, non-removable construction. But the cost of use is high relative to the detachable construction.

In the present embodiment, the material of the container 11 may be any one or a combination of graphite, carbon and ceramic. The material of the container 11 has high heat resistance and structural strength, and can withstand high temperatures and impacts, thereby better protecting and supporting the liner 13. The lining 13 is made of any one or a combination of quartz ceramic, sapphire and toughened ceramic, can be in contact with a silicon material, and impurities cannot be introduced into the lining 13. Of course, the container 11 may be made of other high temperature resistant and high strength materials, and is not limited to the materials listed in the present embodiment.

In this embodiment, for the container assembly 1 having the liner 13 and the container 11, there is a gap between the outer surface of the liner 13 and the inner surface of the container 11, the width of the gap being 3mm to 10 mm. This is because the liner 13 and the container 11 are deformed differently due to the temperature, and in order to prevent the liner 13 and the container 11 from being tightly joined and not separated from each other due to the difference in the amount of deformation between the liner 13 and the container 11, a gap is provided between the outer wall of the liner 13 and the inner wall of the container 11 to allow a margin for deformation. In the process of loading the liner 13 into the container 11, the liner 13 can be inclined at a certain angle, the angle is set to be 10-30 degrees, and the liner 13 is slowly loaded into the container 11, so that the liner 13 can be prevented from being rigidly collided in the process of loading the liner 13 into the container 11 along the axial direction of the container 11, the liner 13 and the container 11 are protected, and the installation reliability is improved. Of course, the liner 13 and the container 11 may be attached to each other, so as to reduce the possibility of mutual collision and damage of the liner 13 and the container 11, and it is inconvenient to take out the liner 13 compared with the structure in which the liner 13 and the container 11 are arranged in a gap.

As shown in fig. 1, the suction pipe assembly 3 in the present embodiment includes an inner suction pipe 31, an outer suction pipe 33, and a connection sleeve 32; the inner suction pipe 31 and the outer suction pipe 33 are connected through a connecting sleeve 32, the connecting sleeve 32 is sleeved outside the connecting part of the inner suction pipe 31 and the outer suction pipe 33, and a suction channel 34 is formed inside the inner suction pipe 31 and the outer suction pipe 33. So set up, the material of interior suction pipe 31 and outer suction pipe 33 can set up alone, and interior suction pipe 31 is owing to be located and holds the chamber 131 in, interior suction pipe 31 and silicon material contact, consequently, interior suction pipe 31 can be according to the different materials of selecting of silicon material, and interior suction pipe 31 and material can be the same with silicon material, avoids in the use, introduces new impurity. And the outer suction pipe 33 may be made of the same material as or different from the inner suction pipe 31.

Further, in this embodiment, the inner suction pipe 31 is located in the accommodating cavity 131, one end of the inner suction pipe extending into the accommodating cavity is a first end, a preset height is provided between the first end and the bottom of the accommodating cavity 131, and the preset height can prevent the sucked material from flowing back from the first end of the inner suction pipe. The outer suction pipe 33 is positioned outside the accommodating component 1, and one end of the outer suction pipe, which is far away from the accommodating component, is a second end part; at least one of the inner suction pipe 31, the outer suction pipe 33 and the connection sleeve 32 is connected with the accommodation component 1 as long as the suction pipe component 3 is connected with the accommodation component 1. Specifically, at least one of the inner suction pipe 31, the outer suction pipe 33, and the connection sleeve 32 is connected to the inner liner 13. Typically, the preset height is greater than or equal to a specific ratio of: the ratio of the height of the receiving chamber 131 to the distance from the first end of the straw assembly 3 to the bottom of the receiving chamber 131 is 1.09.

Preferably, in this embodiment, the material of the inner suction pipe 31 and the outer suction pipe 33 is any one or a combination of more than one of silicon, sapphire, silicon carbide, quartz glass and quartz ceramic, and the material of the inner suction pipe 31 and the material of the outer suction pipe 33 are the same or different. As long as the function of introducing the silicon material is achieved, the material of the straw assembly 3 is selected according to the actual use requirement, and is not limited to the material listed in the embodiment.

Further, in the present embodiment, the connection sleeve 32 is located in the accommodating cavity 131, and the outer diameter of the connection sleeve 32 is larger than the diameter of the through hole of the accommodating component 1 for extending the outer suction pipe 33. Specifically, the outer diameter of the nipple 32 is larger than the diameter of the through hole of the liner 13. So set up, straw assembly 3 passes through the adapter sleeve 32 and is spacing in holding subassembly 1, plays the effect of T type couple, prevents to drop because silicon liquid solidifies the inflation and leads to straw assembly 3 from holding subassembly 1. Alternatively, the cross-sectional shape of the connecting sleeve 32 may be circular, oval, rectangular, or other shapes, as long as the connecting sleeve can be hung in the accommodating component 1, and is not limited to the shapes listed in the embodiment.

As a possible implementation manner, in the present embodiment, the straw assembly 3 and the liner 13 are fixed by bonding, welding or sintering, so as to improve the connection strength and the sealing performance of the straw assembly 3 and the liner 13.

In this embodiment, the connecting sleeve 32 and the inner suction pipe 31 are fixed by sintering or casting, and the connecting sleeve 32 and the outer suction pipe 33 are also fixed by sintering or casting, specifically, the three are fixed by sintering a ceramic adhesive in the connecting sleeve 32, or the three are connected into a whole by casting a quartz slurry in the connecting sleeve 32. Thus, the overall connection strength and sealing performance of the straw assembly 3 can be improved. Of course, the connecting sleeve 32, the inner suction pipe 31 and the outer suction pipe 33 can also be fixed by means of bonding or welding.

According to the requirement of actual use conditions, the wall thickness of the lining 13 can be 12mm-25mm, the diameter of the lining 13 can be 200mm-400mm, the wall thickness of the suction pipe assembly 3 can be kept consistent with the wall thickness of the lining 13, the length of the outer suction pipe 33 can be 80mm-200mm, the length of the inner suction pipe 31 can be 200mm-600mm, and the inner diameters of the inner suction pipe 31 and the outer suction pipe 33 can be 5mm-20 mm; the total height of the suction device A can be 250mm-900 mm. The size range is not limited to the size range exemplified in the present embodiment as long as the use strength of the structure is satisfied.

As shown in fig. 2, based on the material suction device a described in any of the above embodiments, the embodiment of the present invention further provides a material suction apparatus of a single crystal furnace, which includes a furnace shell, a crucible 9 and the material suction device a described in any of the above embodiments, the crucible 9 is located in the furnace shell, the crucible 9 contains a silicon material 8, and the second end of the suction tube component 3 of the material suction device a is immersed in the silicon material in the crucible 9.

According to the single crystal furnace material suction equipment, the impurity silicon material in the crucible of the single crystal furnace is sucked through the material suction device A, so that new silicon material without impurities can be continuously added into the single crystal furnace, the continuous feeding production of the single crystal furnace is realized, and the quality of single crystal silicon is ensured. Of course, the single crystal furnace suction device can also be applied to other scenes, such as: after the crystal pulling operation of the single crystal furnace is completed, if the crucible has residual silicon materials, the silicon materials in the crucible can be sucked out through the single crystal furnace material sucking equipment, so that the material storage in the crucible is avoided, and the single crystal furnace can be conveniently used for the next time. Or the single crystal furnace material suction equipment can also be used in a sampling detection scene.

As shown in fig. 3, this embodiment further provides a work flow of a single crystal furnace material suction device, including the following steps:

and S100, placing the material suction device A into the single crystal furnace, and lowering the material suction device A so that the second end part of the suction pipe component 3 of the material suction device A is immersed into the silicon material 8 in the single crystal furnace. Wherein, inhale 4 hoists of material device A accessible hoist and mount rope and put into single crystal growing furnace, hoist and mount rope 4 goes up and down through last drive mechanism, realizes transferring and carrying in single crystal growing furnace and draws, hoist and mount rope 4 can be the tungsten wire rope, and is high temperature resistant, and intensity is high, is difficult to the fracture. Of course, other materials of the hoisting rope 4 may be used.

Step S200, adjusting the pressure in the single crystal furnace, specifically, pressurizing the single crystal furnace to make the pressure in the single crystal furnace greater than the pressure in the accommodating cavity 131 of the material suction device A, pressing the silicon material in the crucible 9 into the accommodating cavity 131 by using the pressure difference, and stopping pressurizing after the accommodating cavity 131 is filled with the silicon material.

Through the process, the material suction device A can suck impurity silicon materials in the single crystal furnace under the condition of no shutdown, the sustainable feeding production of the single crystal furnace is realized, and the quality of the single crystal silicon is ensured.

Further, in this embodiment, before the material suction device a is placed in the single crystal furnace in step S100, the method further includes the steps of: and taking the crystal bar out of the single crystal furnace, and determining the material sucking time by detecting whether the quality of the crystal bar reaches the standard. If the quality of the detected crystal bar does not reach the standard, indicating that the silicon material in the crucible 9 is enriched with impurities, the material is required to be sucked, and new silicon material is added again.

Further, in this embodiment, after the placing of the material suction device a into the single crystal furnace in step S100 and before the dipping of the second end of the suction pipe assembly 3 of the material suction device a into the silicon material in the single crystal furnace, the method further includes the steps of: and (3) purifying the single crystal furnace, filling protective gas into the auxiliary chamber 5 of the single crystal furnace once or for many times, and then pumping out the protective gas to finish the purification of the single crystal furnace. Specifically, during the operation of the single crystal furnace, the sub-chamber 5 is communicated with the furnace cylinder 6, negative pressure is formed inside, and therefore, before the material suction device A is put in, the valve body 10 is closed, the communication between the sub-chamber 5 and the furnace cylinder 6 is cut off, and the sub-chamber 5 is opened. Then hoisting and placing the furnace body into a material suction device A, then closing the auxiliary chamber 5, filling protective gas such as argon into the auxiliary chamber 5, then pumping out the protective gas in the auxiliary chamber 5, and purifying the gas in the auxiliary chamber 5 after multiple times of inflation and air suction so that the auxiliary chamber 5 does not contain impurity gas, thereby completing the purification of the auxiliary chamber 5, and ensuring that the pressure of the auxiliary chamber 5 is equal to the pressure in the furnace cylinder 6 and is negative pressure which is about 1torr-15 torr. At this time, the pressure in the housing chamber 131 of the suction device a is equal to the pressure in the sub-chamber 5. Then, the valve body 10 is opened, so that the auxiliary chamber 5 is communicated with the furnace barrel 6 again, and the subsequent material suction device A can be conveniently and continuously placed.

Further, in this embodiment, after the single crystal furnace is cleaned in step S100 and before the second end of the suction pipe assembly 3 of the suction device a is inserted into the silicon material in the crucible 9, the method further includes the steps of: preheating the material suction device A. Specifically, the material suction device A is slowly lowered, and in the process of slowly lowering, the material suction device A is preheated for multiple times through heat in the single crystal furnace, so that the material suction device A is prevented from being damaged due to thermal stress generated by thermal shock. The preheating time can be set to be 5min-30min, namely the intermediate time from the time when the material suction device A enters the single crystal furnace to the time when the material suction device A is lowered into the silicon material 8 is 5min-30min, so as to complete the full preheating. Of course, the silicon material may be directly inserted into the silicon material without preheating, as long as the material suction device a can overcome the thermal stress.

Further, in this embodiment, the adjusting the pressure in the single crystal furnace in step S200 specifically includes: and (3) rapidly filling protective gas into the single crystal furnace, wherein the protective gas can be inert gas such as argon, helium and the like, and can also be nitrogen, hydrogen and the like, and the protective gas does not react with the silicon material 8 and does not introduce impurities. The pressurizing time is 0.5s-20s, and the protective gas can be rapidly filled to prevent the silicon material 8 from solidifying in the suction channel 34 of the suction pipe assembly 3, so as to ensure the smoothness of the suction channel 34, which is determined by the residual quantity of the silicon material in the crucible 9 and the collection quantity of the accommodating cavity 131 of the suction device a, and is not limited to the time range listed in the embodiment.

Further, in this embodiment, after the silicon material in the single crystal furnace is pressed into the holding chamber by the pressure difference in step S200, step S300 is further included, in which the material suction device a is cooled and then removed from the single crystal furnace. After the material suction operation is finished, the material suction device A needs to be naturally cooled in the single crystal furnace for 10-60 min, so that the material suction device A is cooled to be adaptive to the external temperature, and the thermal stress damage caused by direct exposure to the external temperature is avoided.

Further, in this embodiment, after the material sucking device a is cooled in step S300 and then is removed from the single crystal furnace, the method further includes the steps of: adding new silicon material into the single crystal furnace to continue the crystal pulling process. Thereby being capable of continuously carrying out crystal pulling production without stopping the machine.

In the foregoing description of embodiments, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.

The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.

Claims

1. The utility model provides a inhale material device which characterized in that is applied to single crystal growing furnace, inhale material device includes:

the accommodating component is provided with a closed accommodating cavity;

the suction pipe assembly is connected with the accommodating assembly and provided with a first end part and a second end part which are opposite, the first end part is positioned in the accommodating cavity and communicated with the accommodating cavity, the second end part of the suction pipe assembly is positioned outside the accommodating cavity, the suction pipe assembly is also provided with a suction channel communicated with the first end part and the second end part, and the suction channel is communicated with the accommodating cavity and the outside of the accommodating assembly.

2. The suction device as claimed in claim 1, wherein the housing assembly comprises:

a container to which the straw assembly is connected;

the cover plate is covered on the open end of the container in a sealing mode, and the cover plate and the container are sealed to form the accommodating cavity.

3. A suction device according to claim 2, characterized in that the interior of the container is at least partly provided with a lining for contact with the charge, the receiving chamber being at least partly defined by the lining.

4. A suction device according to claim 3, characterized in that there is a gap between the outer surface of the liner and the inner surface of the container, the gap having a width of 3mm to 10 mm.

5. The material suction device according to claim 3, wherein the container is made of any one of graphite, carbon and ceramic; the lining is made of any one of quartz ceramic, sapphire and toughened ceramic.

6. The suction device as claimed in claim 1, wherein the suction pipe assembly comprises an inner suction pipe, an outer suction pipe and a connecting sleeve; the inner suction pipe and the outer suction pipe are connected through the connecting sleeve, the connecting sleeve is sleeved outside the connecting part of the inner suction pipe and the outer suction pipe, and the suction channel is formed inside the inner suction pipe and the outer suction pipe.

7. The suction device as claimed in claim 6, wherein the inner suction pipe is located in the accommodating component, one end of the inner suction pipe extending into the accommodating cavity is a first end, and a preset height is provided between the first end and the bottom of the accommodating cavity, and the preset height can prevent the sucked material from flowing back from the first end of the inner suction pipe;

the outer suction pipe is positioned outside the accommodating component, and one end of the outer suction pipe, which is far away from the accommodating component, is the second end part;

any one or more of the inner suction pipe, the outer suction pipe and the connecting sleeve is/are connected with the accommodating component.

8. The suction device as claimed in claim 7, wherein the connecting sleeve is located in the accommodating cavity, and the outer diameter of the connecting sleeve is larger than the diameter of the through hole of the accommodating component for extending out of the outer suction pipe.

9. The material suction device as claimed in claim 7, wherein the connecting sleeve and the inner suction pipe are fixed by sintering with a ceramic adhesive or pouring with quartz slurry; the connecting sleeve and the outer suction pipe are fixed through ceramic binder sintering or quartz slurry pouring.

10. The material suction device as claimed in claim 6, wherein the inner suction pipe and the outer suction pipe are made of any one of silicon, sapphire, silicon carbide, quartz glass and quartz ceramic, and the inner suction pipe and the outer suction pipe are made of the same or different materials.

11. A single crystal furnace material suction apparatus, characterized by comprising a furnace shell, a crucible and the material suction device as claimed in any one of claims 1to 10, wherein the crucible is positioned in the furnace shell, the crucible contains silicon material, and the second end part of the suction pipe component of the material suction device is immersed in the silicon material in the crucible.