CN216141269U - Large-spacing high-compactness polysilicon reduction furnace - Google Patents
Large-spacing high-compactness polysilicon reduction furnace Download PDFInfo
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- CN216141269U CN216141269U CN202122200007.6U CN202122200007U CN216141269U CN 216141269 U CN216141269 U CN 216141269U CN 202122200007 U CN202122200007 U CN 202122200007U CN 216141269 U CN216141269 U CN 216141269U
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Abstract
The utility model discloses a large-spacing high-compactness polysilicon reduction furnace, which belongs to the technical field of polysilicon production and comprises a chassis and a furnace barrel arranged above the chassis, wherein a tail gas outlet hole, a silicon rod ring and a nozzle ring are arranged on the chassis, a central nozzle is arranged at the center of the chassis, the diameter of the central nozzle is 8-18mm, the silicon rod ring and the nozzle ring are arranged at intervals, the spacing between any two adjacent silicon rods on the same silicon rod ring is 300mm, the diameter of an edge nozzle on the nozzle ring is 7-14mm, and the diameter of the edge nozzle is smaller than that of the central nozzle. According to the utility model, the distance between the rods on the same circle of silicon rod ring is increased, and meanwhile, the center is provided with the center nozzle with a larger diameter, so that the thermal field in the furnace is optimized, the deposition rate of polycrystalline silicon is improved by 10-40%, the production efficiency is greatly improved, and the reduction power consumption is 4-8% lower than that of the existing furnace.
Description
Technical Field
The utility model relates to the technical field of polycrystalline silicon production, in particular to a large-space high-compactness polycrystalline silicon reduction furnace.
Background
Polycrystalline silicon is a basic material for the electronics industry, and is used in particular for the manufacture of photovoltaic power generation-solar cells, integrated circuits, semiconductor separation elements, power electronics and the like. Because the polycrystalline silicon industry belongs to the high energy consumption industry, the reduction of the energy consumption of the polycrystalline silicon production has great practical value, at present, the production of the polycrystalline silicon generally adopts an improved Siemens method, wherein the energy consumption is mainly concentrated in a polycrystalline silicon reduction furnace, and therefore, the reduction of the energy consumption of the polycrystalline silicon reduction furnace is an important way for reducing the energy consumption of the polycrystalline silicon production.
The existing reduction furnace has small silicon rod spacing and uneven thermal field in the furnace, and the thermal field in the furnace is easy to lose control and generate atomization after the silicon rods grow to the middle stage. In the actual operation process, the material concentration is only passively diluted, and the temperature of the silicon rod is reduced to prevent atomization, but the deposition rate of the polycrystalline silicon is objectively reduced.
Disclosure of Invention
The utility model aims to solve the problems in the prior art and provides a large-space high-compactness polysilicon reduction furnace, wherein the space between rods on the same circle of silicon rod ring is increased, a central nozzle with a larger diameter is arranged at the center, the thermal field in the furnace is optimized, the deposition rate of polysilicon is improved by 10-40%, the production efficiency is greatly improved, and the reduction power consumption is reduced by 4-8% compared with the conventional furnace type.
The purpose of the utility model is realized by the following technical scheme:
the utility model provides a big interval high density rate polycrystalline silicon reduction furnace, includes chassis and the stove section of thick bamboo of setting in the chassis top, its characterized in that: the tail gas outlet, the silicon rod rings and the nozzle rings are arranged on the base plate, a central nozzle is arranged at the central position of the base plate, the diameter of the central nozzle is 8-18mm, the silicon rod rings and the nozzle rings are arranged at intervals, the distance between any two adjacent silicon rods on the same silicon rod ring is 240-300mm, the diameter of an edge nozzle on the nozzle ring is 7-14mm, and the diameter of the edge nozzle is smaller than that of the central nozzle.
Preferably, the furnace cylinder is provided with a furnace cylinder jacket, and the furnace cylinder jacket is provided with a furnace cylinder water inlet and a furnace cylinder water outlet.
Preferably, the furnace barrel is provided with a sight glass.
Preferably, a chassis jacket cavity is arranged on the chassis, and a chassis cooling water outlet and a chassis cooling water inlet are arranged on the chassis jacket cavity.
Preferably, an exhaust valve is arranged on the chassis jacket cavity.
Preferably, the exhaust outlet holes are uniformly arranged on the outer edge of the chassis.
Preferably, the exhaust outlet holes are uniformly formed in the middle of the chassis.
Preferably, the chassis is provided with a reduction electrode, and the reduction electrode is provided with an electrode cooling water pipeline.
The working principle is as follows: after cleaning and drying a furnace drum chassis, filling a silicon core in the furnace; let in chassis cooling water, electrode cooling water and a stove section of thick bamboo cooling water to open discharge valve, can close discharge valve when discharge valve department exhaust is accomplished, start the breakdown silicon core through the high pressure, let the silicon core be in red-hot state, sight glass hydrogen sweeps the sight glass afterwards, prepare the back, the feeding is prepared to the reducing furnace, the feed gas is spouted into in the reducing furnace through reduction material admission pipe and nozzle cascade, through diffusion, convection action at silicon core surface pyrolysis deposit polycrystalline silicon, reduction tail gas passes through the tail gas outlet and discharges. The rod spacing on the same circle of silicon rod ring on the reducing furnace is properly increased to 240-300mm from the existing 220-235 mm, the thermal field in the furnace is optimized, the deposition rate of polycrystalline silicon is improved by 10-40%, the production efficiency is greatly improved, the reduction power consumption is lower by 4-8% than that of the existing furnace, after the rod spacing is increased, the diameter of the silicon rod can be increased, the yield of a single furnace is 10-40% higher than the original rod diameter, meanwhile, due to the increase of the rod spacing, the diameter of the silicon rod can be increased during furnace shutdown, and the yield of the polycrystalline silicon in the single furnace is increased; the center is provided with the center nozzle with a larger caliber, so that the growing environment of the cross beam part at the top of the silicon rod is improved, and popcorn at the top of the silicon rod is prevented from growing, thereby improving the compactness rate of the silicon rod and reducing the reduction power consumption.
The beneficial effects of this technical scheme are as follows:
according to the large-spacing high-compactness polysilicon reduction furnace provided by the utility model, the rod spacing on the same silicon rod ring is increased, and meanwhile, the center is provided with the center nozzle with a larger diameter, so that the thermal field in the furnace is optimized, the deposition rate of polysilicon is improved by 10-40%, the production efficiency is greatly improved, and the reduction power consumption is reduced by 4-8% compared with that of the existing furnace.
According to the large-space high-compactness polysilicon reduction furnace provided by the utility model, the hydrogen purging pipe of the sight glass is arranged on the inner side of the sight glass, the arrangement of the sight glass is convenient for observing the growth condition of the silicon rod in the reduction furnace, and the hydrogen is introduced into the hydrogen purging pipe of the sight glass to prevent silicon materials from being left on the sight glass and hindering the observation of an operator.
And thirdly, according to the large-space high-compactness polysilicon reduction furnace provided by the utility model, the exhaust valve is arranged, and cooling water is added into the chassis, so that the whole chassis jacket cavity can be filled with the cooling water, and the cooling effect of the chassis is ensured.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic structural diagram of a chassis according to a first embodiment of the present invention;
FIG. 3 is a schematic structural diagram of a chassis according to a second embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a chassis according to a third embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a chassis according to a fourth embodiment of the present invention;
wherein: 1. a chassis; 1.1, a tail gas outlet; 1.2, silicon rod rings; 1.3, a nozzle ring; 1.4, a central nozzle; 1.5, edge nozzles; 2. a furnace barrel; 3. a furnace barrel jacket; 3.1, a furnace cylinder water inlet; 3.2, a furnace cylinder water outlet; 4. a sight glass; 4.1, viewing mirror hydrogen purging pipe; 5. a chassis jacket cavity; 5.1, a chassis cooling water outlet; 5.2, a chassis cooling water inlet; 6. an exhaust valve; 7. a reduction electrode; 8. and an electrode cooling water pipeline.
Detailed Description
The present invention will be described in further detail with reference to examples, but the embodiments of the present invention are not limited thereto.
Example 1
As a most basic embodiment of the present invention, the present embodiment discloses a large-spacing high-density polysilicon reduction furnace, as shown in fig. 1 and fig. 2, comprising a chassis 1 and a furnace barrel 2 disposed above the chassis 1, wherein the chassis 1 is provided with a tail gas outlet 1.1, a silicon rod ring 1.2 and a nozzle ring 1.3, the tail gas outlet 1.1 is provided with 4 tail gas outlets 1.1, the tail gas outlet 1.1 is uniformly disposed in the middle of the chassis 1, the chassis 1 is centrally provided with a central nozzle 1.4, the diameter of the central nozzle 1.4 is 8mm, the silicon rod ring 1.2 and the nozzle ring 1.3 are spaced apart, the silicon rod ring 1.2 comprises a first silicon rod ring, a second silicon rod ring and a third silicon rod ring, the first silicon rod ring is provided with 4 pairs of silicon rods, the second silicon rod ring is provided with 8 pairs of silicon rods, the third silicon rod ring is provided with 12 pairs of silicon rods, the same ring 1.2, and the spacing between any two adjacent silicon rods is 290mm, the nozzle ring 1.3 comprises a first nozzle ring and a second nozzle ring, wherein 8 edge nozzles 1.5 are arranged on the first nozzle ring, 8 edge nozzles 1.5 are arranged on the second nozzle ring, the diameter of the edge nozzles 1.5 on the nozzle ring 1.3 is 7mm, and the diameter of the edge nozzles 1.5 is smaller than that of the center nozzle 1.4.
Example 2
As a preferred embodiment of the present invention, the present embodiment discloses a large-pitch high-density polysilicon reduction furnace, as shown in fig. 1 and fig. 3, comprising a base plate 1 and a furnace barrel 2 disposed above the base plate 1, wherein the base plate 1 is provided with a tail gas outlet 1.1, a silicon rod ring 1.2 and a nozzle ring 1.3, the number of the tail gas outlet 1.1 is 6, the tail gas outlet 1.1 is uniformly disposed on the outer edge of the base plate 1, the central position of the base plate 1 is provided with a central nozzle 1.4, the diameter of the central nozzle 1.4 is 13mm, the silicon rod ring 1.2 and the nozzle ring 1.3 are disposed at an interval, the silicon rod ring 1.2 comprises a first silicon rod ring, a second silicon rod ring, a third silicon rod ring and a fourth silicon rod ring, the first silicon rod ring is provided with 4 pairs of silicon rods, the second silicon rod ring is provided with 8 pairs of silicon rods, the third silicon rod ring is provided with 12 pairs of silicon rods, the fourth ring is provided with 16 pairs of silicon rods, the same ring 1.2, the spacing between any two adjacent silicon rods is 275mm, and nozzle ring 1.3 includes first nozzle ring, second nozzle ring and third nozzle ring, is provided with 4 edge nozzles 1.5 on the first nozzle ring, is provided with 12 edge nozzles 1.5 on the second nozzle ring, is provided with 12 edge nozzles 1.5 on the third nozzle ring, edge nozzle 1.5 diameter on the nozzle ring 1.3 is 10mm, and the diameter of edge nozzle 1.5 is less than the diameter of central nozzle 1.4.
Preferably, the furnace tube 2 is provided with a furnace tube jacket 3, and the furnace tube jacket 3 is provided with a furnace tube water inlet 3.1 and a furnace tube water outlet 3.2.
Example 3
As a preferred embodiment of the present invention, the present embodiment discloses a large-pitch high-density polysilicon reduction furnace, as shown in fig. 1 and 4, comprising a base plate 1 and a furnace barrel 2 disposed above the base plate 1, wherein the base plate 1 is provided with a tail gas outlet 1.1, a silicon rod ring 1.2 and a nozzle ring 1.3, the tail gas outlet 1.1 is provided with 4 tail gas outlets 1.1, the tail gas outlet 1.1 is uniformly disposed on the outer edge of the base plate 1, the central position of the base plate 1 is provided with a central nozzle 1.4, the diameter of the central nozzle 1.4 is 18mm, the silicon rod ring 1.2 and the nozzle ring 1.3 are spaced apart, the silicon rod ring 1.2 comprises a first silicon rod ring, a second silicon rod ring, a third silicon rod ring and a fourth silicon rod ring, the first silicon rod ring is provided with 4 pairs of silicon rods, the second silicon rod ring is provided with 8 pairs of silicon rods, the third silicon rod ring is provided with 12 pairs of silicon rods, the fourth ring is provided with 16 pairs of silicon rods, and the same ring 1.2, the spacing between any two adjacent silicon rods is 300mm, and nozzle ring 1.3 includes first nozzle ring, second nozzle ring and third nozzle ring, is provided with 4 edge nozzle 1.5 on the first nozzle ring, is provided with 12 edge nozzle 1.5 on the second nozzle ring, is provided with 12 edge nozzle 1.5 on the third nozzle ring, edge nozzle 1.5 diameter on the nozzle ring 1.3 is 14mm, and the diameter of edge nozzle 1.5 is less than the diameter of central nozzle 1.4.
Preferably, the furnace tube 2 is provided with a furnace tube jacket 3, and the furnace tube jacket 3 is provided with a furnace tube water inlet 3.1 and a furnace tube water outlet 3.2.
Preferably, the furnace tube 2 is provided with a sight glass 4.
Example 4
As a preferred embodiment of the present invention, the present embodiment discloses a large-spacing high-density polysilicon reduction furnace, as shown in fig. 1 and 5, comprising a base plate 1 and a furnace barrel 2 disposed above the base plate 1, wherein the base plate 1 is provided with a tail gas outlet 1.1, a silicon rod ring 1.2 and a nozzle ring 1.3, the tail gas outlet 1.1 is provided with 8 tail gas outlets 1.1, the tail gas outlet 1.1 is uniformly disposed on the outer edge of the base plate 1, the central position of the base plate 1 is provided with a central nozzle 1.4, the diameter of the central nozzle 1.4 is 11mm, the silicon rod ring 1.2 and the nozzle ring 1.3 are spaced apart, the silicon rod ring 1.2 comprises a first silicon rod ring, a second silicon rod ring, a third silicon rod ring, a fourth silicon rod ring and a fifth silicon rod ring, the first silicon rod ring is provided with 4 pairs of silicon rods, the second silicon rod ring is provided with 8 pairs of silicon rods, the third silicon rod ring is provided with 12 pairs of silicon rods, the fourth silicon rod ring is provided with 16 pairs of silicon rods, the silicon rod rings are provided with 20 pairs of silicon rods, the spacing between any two adjacent silicon rods is 280mm on the same silicon rod ring 1.2, the nozzle rings 1.3 comprise a first nozzle ring, a second nozzle ring, a third nozzle ring and a fourth nozzle ring, the first nozzle ring is provided with 4 edge nozzles 1.5, the second nozzle ring is provided with 8 edge nozzles 1.5, the third nozzle ring is provided with 16 edge nozzles 1.5, the fourth nozzle ring is provided with 16 edge nozzles 1.5, the diameter of the edge nozzle 1.5 on the nozzle ring 1.3 is 9mm, and the diameter of the edge nozzle 1.5 is smaller than that of the center nozzle 1.4.
Preferably, the furnace tube 2 is provided with a furnace tube jacket 3, and the furnace tube jacket 3 is provided with a furnace tube water inlet 3.1 and a furnace tube water outlet 3.2.
Preferably, the furnace tube 2 is provided with a sight glass 4.
Preferably, a chassis jacket cavity 5 is arranged on the chassis 1, and a chassis cooling water outlet 5.1 and a chassis cooling water inlet 5.2 are arranged on the chassis jacket cavity 5.
Preferably, the chassis jacket cavity 5 is provided with an exhaust valve 6.
Preferably, the exhaust outlet holes 1.1 are uniformly arranged on the outer edge of the chassis 1.
Preferably, the exhaust outlet holes 1.1 are uniformly arranged in the middle of the chassis 1.
Preferably, the chassis 1 is provided with a reduction electrode 7, and the reduction electrode 7 is provided with an electrode cooling water pipeline 8.
The working principle is as follows: after the chassis 1 of the furnace cylinder 2 is cleaned and dried, a silicon core is arranged in the furnace; let in 1 cooling water on chassis, electrode cooling water and 2 cooling waters of a stove section of thick bamboo, and open discharge valve 6, 6 exhaust of department when discharge valve can close discharge valve 6, start the breakdown silicon core through the high pressure, let the silicon core be in red-hot state, 4 hydrogen on the sight glass sweeps sight glass 4 afterwards, prepare the back, the feeding is prepared to the reduction furnace, the feed gas is spouted into in the reduction furnace through reduction material inlet pipe and nozzle cascade 1.3, through diffusion, convection action at silicon core surface thermal decomposition deposit polycrystalline silicon, reduction tail gas passes through the tail gas outlet and discharges. The rod spacing on the same circle of silicon rod ring 1.2 on the reducing furnace is properly increased to 240-300mm from the existing 220-235 mm, the thermal field in the furnace is optimized, the deposition rate of polycrystalline silicon is improved by 10-40%, the production efficiency is greatly improved, the reduction power consumption is lower by 4-8% than that of the existing furnace type, after the rod spacing is increased, the diameter of a silicon rod can be increased, the yield of a single furnace is 10-40% higher than the original rod diameter, meanwhile, due to the increase of the rod spacing, the diameter of the silicon rod can be increased more coarsely during furnace shutdown, and the yield of the polycrystalline silicon in the single furnace is increased; the center is provided with a central nozzle 1.4 with a larger caliber, the growing environment of the top beam part of the silicon rod is improved, and popcorn on the top of the silicon rod is avoided, so that the densification rate of the silicon rod is improved, and the reduction power consumption is reduced.
The beneficial effects of this technical scheme are as follows:
according to the large-spacing high-compactness polysilicon reduction furnace provided by the utility model, the rod spacing on the same silicon rod ring 1.2 is increased, and meanwhile, the center is provided with the center nozzle 1.4 with a larger caliber, so that the thermal field in the furnace is optimized, the deposition rate of polysilicon is improved by 10-40%, the production efficiency is greatly improved, and the reduction power consumption is reduced by 4-8% compared with that of the existing furnace.
The inside of the sight glass 4 is provided with a sight glass hydrogen purging pipe 4.1, the arrangement of the sight glass 4 is convenient for observing the growth condition of the silicon rod in the reduction furnace, and the sight glass hydrogen purging pipe 4.1 is filled with hydrogen to prevent the sight glass 4 from leaving silicon materials, which hinders the observation of operators. The exhaust valve 6 is arranged, cooling water is added into the chassis 1, so that the whole chassis jacket cavity 5 is filled with the cooling water, and the cooling effect of the chassis 1 is ensured.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and all simple modifications and equivalent variations of the above embodiments according to the technical spirit of the present invention are included in the scope of the present invention.
Claims (8)
1. The utility model provides a big interval high density rate polycrystalline silicon reduction furnace, includes chassis (1) and sets up stove section of thick bamboo (2) in chassis (1) top, its characterized in that: the silicon rod silicon ingot casting machine is characterized in that a tail gas outlet hole (1.1), a silicon rod ring (1.2) and a nozzle ring (1.3) are arranged on the base plate (1), a central nozzle (1.4) is arranged at the central position of the base plate (1), the diameter of the central nozzle (1.4) is 8-18mm, the silicon rod ring (1.2) and the nozzle ring (1.3) are arranged at intervals, the distance between any two adjacent silicon rods on the same silicon rod ring (1.2) is 240-300mm, the diameter of an edge nozzle (1.5) on the nozzle ring (1.3) is 7-14mm, and the diameter of the edge nozzle (1.5) is smaller than that of the central nozzle (1.4).
2. The polysilicon reducing furnace with large spacing and high densification rate as claimed in claim 1, wherein: the furnace barrel (2) is provided with a furnace barrel jacket (3), and the furnace barrel jacket (3) is provided with a furnace barrel water inlet (3.1) and a furnace barrel water outlet (3.2).
3. The large-spacing high-densification-rate polycrystalline silicon reduction furnace according to claim 1 or 2, characterized in that: the furnace barrel (2) is provided with a sight glass (4).
4. The polysilicon reducing furnace with large spacing and high densification rate as claimed in claim 1, wherein: the chassis (1) is provided with a chassis jacket cavity (5), and the chassis jacket cavity (5) is provided with a chassis cooling water outlet (5.1) and a chassis cooling water inlet (5.2).
5. The polysilicon reducing furnace with large spacing and high densification rate as claimed in claim 4, wherein: an exhaust valve (6) is arranged on the chassis jacket cavity (5).
6. The polysilicon reducing furnace with large spacing and high densification rate as claimed in claim 5, wherein: the tail gas outlet holes (1.1) are uniformly arranged on the outer edge of the chassis (1).
7. The polysilicon reducing furnace with large spacing and high densification rate as claimed in claim 5, wherein: the tail gas outlets (1.1) are uniformly arranged in the middle of the chassis (1).
8. The polysilicon reducing furnace with large spacing and high densification rate as claimed in claim 5, wherein: the chassis (1) is provided with a reduction electrode (7), and the reduction electrode (7) is provided with an electrode cooling water pipeline (8).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122200007.6U CN216141269U (en) | 2021-09-13 | 2021-09-13 | Large-spacing high-compactness polysilicon reduction furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122200007.6U CN216141269U (en) | 2021-09-13 | 2021-09-13 | Large-spacing high-compactness polysilicon reduction furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN216141269U true CN216141269U (en) | 2022-03-29 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202122200007.6U Active CN216141269U (en) | 2021-09-13 | 2021-09-13 | Large-spacing high-compactness polysilicon reduction furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN216141269U (en) |
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2021
- 2021-09-13 CN CN202122200007.6U patent/CN216141269U/en active Active
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