CN216120355U

CN216120355U - Perovskite solar cell in-situ annealing film forming device

Info

Publication number: CN216120355U
Application number: CN202122198906.7U
Authority: CN
Inventors: 李新连; 肖平; 赵志国; 秦校军; 赵东明; 张赟; 夏渊; 张�杰
Original assignee: Huaneng Clean Energy Research Institute; Huaneng Renewables Corp Ltd
Current assignee: Huaneng Clean Energy Research Institute; Huaneng Renewables Corp Ltd
Priority date: 2021-09-10
Filing date: 2021-09-10
Publication date: 2022-03-22
Anticipated expiration: 2031-09-10

Abstract

The utility model discloses an in-situ annealing film forming device for a perovskite solar cell, which comprises: a substrate; a platform; the heating assembly is arranged near the platform and used for providing heat for the substrate; and the control switch is used for controlling the starting and stopping of the heating assembly. In the utility model, the film layer is coated on the substrate of the platform, the position of the coated film layer does not need to be changed, and the film layer can be heated and annealed by directly switching on the heating assembly through the control switch. The step of transferring the film layer to the annealing furnace is omitted, so that the volatilization of the solvent of the film layer in a natural state can be avoided. In addition, the heating assembly is arranged below the platform, and the heat of the heating assembly is quickly transferred to the substrate through heat radiation. The film layer is formed on the substrate, if the substrate is heated from the bottom, the solvent in the film layer preferentially receives heat with the solvent on the surface layer, so that the volatilization of the solvent in the film layer is facilitated, and the problem that the solvent in the film layer is difficult to volatilize is solved.

Description

Perovskite solar cell in-situ annealing film forming device

Technical Field

The utility model relates to the technical field of film forming of perovskite solar cells, in particular to an in-situ annealing film forming device for perovskite solar cells.

Background

Perovskite solar cells are receiving more and more attention due to their advantages of high conversion efficiency, low cost, environmental friendliness, etc. In addition, the photoelectric conversion efficiency of perovskite solar energy is improved by several times in a short period of several years, and the perovskite solar energy shows very excellent photoelectric performance. The preparation method of the film layer of the perovskite solar cell comprises the following steps: preparing a transparent conductive film on a substrate for an electrode layer on a light receiving side, then preparing a carrier transmission layer on the transparent conductive film, preparing a perovskite layer above the carrier transmission layer as a light absorption layer, then preparing a carrier transmission layer on the other side on the light absorption layer, and finally preparing a metal layer as a transparent conductive film on the other side.

After the film layer is formed, the surface of the film layer is blown by an air knife to quickly evaporate and remove the solvent. The film layer is then placed into an annealing furnace for annealing treatment to further remove the solvent and complete crystallization of the film layer. However, during the transfer of the film layer to the annealing furnace, residual solvent in the film layer may be volatilized in a natural state, which may affect the quality of the finished perovskite battery.

Therefore, how to shorten the turnover time from the film layer to the annealing furnace, so as to avoid the solvent from volatilizing in a natural state and further ensure the quality of the finished product is a critical problem to be solved urgently by the technical personnel in the field.

SUMMERY OF THE UTILITY MODEL

The utility model aims to shorten the turnover time of a film layer to an annealing furnace, thereby avoiding solvent volatilization in a natural state and further ensuring the quality of a finished product. In order to achieve the purpose, the utility model provides the following technical scheme:

an in-situ annealing film forming device for a perovskite solar cell comprises:

a substrate;

a stage on which the substrate is disposed;

a heating assembly disposed proximate to the platen for providing heat to the substrate;

and the control switch is used for controlling the starting and stopping of the heating assembly.

Preferably, the heating assembly is disposed below the stage, and heat of the heating assembly is transferred to the substrate in a heat radiation manner.

Preferably, the platform is made of high-temperature-resistant glass.

Preferably, the high-temperature resistant glass is high-Peng silica glass or quartz glass.

Preferably, the platform comprises a platform main body and supporting legs, the supporting legs are arranged on the side part of the platform main body and used for supporting the platform main body, and the heating assembly is positioned under the platform main body.

Preferably, the heating component is a quartz heating pipe, and the control switch is used for controlling the on-off of the quartz heating pipe.

Preferably, the quartz heating pipes are multiple, and the multiple quartz heating pipes are arranged in a row.

Preferably, the platform is provided with an adsorption hole, the adsorption hole is communicated with a negative pressure pump, and the adsorption hole is used for adsorbing the substrate.

According to the technical scheme, after the film layer is subjected to forming and solvent removal by the air knife, the position of the film layer does not need to be changed, and the film layer can be heated and annealed by directly opening the heating assembly through the control switch. The step of transferring the film layer to the annealing furnace is omitted, so that the volatilization of the solvent of the film layer in a natural state can be avoided, and the quality of the finished perovskite solar cell is improved. In addition, the step of transferring the film layer to the annealing furnace is omitted, so that the labor amount and the equipment number of workers are reduced, the cost is reduced, and the production line takt is improved.

In addition, the heating assembly is arranged below the platform, and the heat of the heating assembly is quickly transferred to the substrate through heat radiation. The film layer is formed on the substrate, if the substrate is heated from the bottom, the solvent in the film layer preferentially receives heat with the solvent on the surface layer, so that the volatilization of the solvent in the film layer is facilitated, and the difficult problem that the solvent on the surface is volatilized firstly and the inside is difficult to volatilize in the conventional annealing furnace is solved.

Drawings

In order to more clearly illustrate the solution of the embodiments of the present invention, the drawings used in the description of the embodiments will be briefly described below, and it is obvious that the drawings in the description below are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained based on these drawings without inventive efforts.

FIG. 1 is a cross-sectional view of an in-situ annealing film forming apparatus for a perovskite solar cell according to an embodiment of the utility model;

fig. 2 is a front view of a platform according to an embodiment of the utility model.

Wherein, 1 is a film layer, 2 is a substrate, 3 is a platform, 4 is a quartz heating pipe, and 5 is a supporting leg.

Detailed Description

The utility model discloses an in-situ annealing film forming device for a perovskite solar cell, which can anneal a film layer under the condition that the position of the film layer is not changed, so that a solvent is prevented from volatilizing in a natural state, and the quality of a finished product is ensured.

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments of the present invention without making any creative effort, shall fall within the protection scope of the present invention.

In the description of the present invention, the terms "upper", "lower", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention but do not require that the present invention must be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.

The utility model discloses an in-situ annealing film forming device for a perovskite solar cell, which comprises: substrate 2, stage 3, heating assembly and control switch. The substrate 2 is arranged on a stage 3. The substrate 2 is used for forming the perovskite solar cell film layer 1. The heating assembly is arranged near the platform 3 and is used for providing heat for the substrate 2 so as to realize annealing of the film layer 1. The formed film 1 is annealed in situ because the position is not changed during the annealing process. The control switch is used for controlling the start and stop of the heating assembly. In the process of removing the solvent from the formed film layer 1 and the air knife, the heating assembly is in a closed state, and the heating assembly does not transmit heat to the substrate 2. After the film layer 1 is formed and the solvent of the film layer 1 is removed through the air knife, the control switch controls the heating assembly to be started so as to carry out annealing treatment on the film layer 1.

In the utility model, after the film layer 1 is molded and the solvent is removed by the air knife, the position of the film layer 1 does not need to be changed, and the film layer 1 can be heated and annealed by directly opening the heating assembly through the control switch. The step of transferring the film layer 1 to the annealing furnace is omitted, so that the volatilization of the solvent of the film layer 1 in a natural state can be avoided, and the quality of the finished perovskite solar cell is improved. In addition, the step of transferring the film layer 1 to the annealing furnace is omitted, so that the labor amount and the equipment number of workers are reduced, the cost is reduced, and the production line takt is improved.

In a long-term operation process, the applicant finds that a perovskite solar cell finished product prepared by a plurality of processing technologies such as film layer 1 forming, air knife solvent removal, annealing and the like has certain quality defects. The research of the applicant finds that the reason for the quality defect is as follows: in the process of annealing the film layer 1 on the substrate 2 by using the annealing furnace, the solvent on the surface of the film layer 1 is volatile, and the solvent in the film layer 1 is difficult to volatilize. This phenomenon can cause the above-mentioned defects to occur in the finished perovskite solar cell. In order to make up for the defect, the utility model makes the following innovative settings: a heating assembly is disposed below the stage 3, and heat of the heating assembly is rapidly transferred to the substrate 2 through the stage 3 in a heat radiation manner. The film layer 1 is formed on the substrate 2, if the substrate 2 is heated from the bottom, the solvent in the film layer 1 can preferentially receive heat with the solvent on the surface layer, so that the volatilization of the solvent in the film layer 1 is facilitated, the difficult problems that the solvent on the surface volatilizes first and the inside is difficult to volatilize in a conventional annealing furnace are solved, and the quality defect of the perovskite solar cell is overcome.

The material of the platform 3 is limited to be high-temperature-resistant glass, and specifically, high-grade silicon glass or quartz glass can be selected.

In order to facilitate the arrangement of the heating assembly, the platform 3 is designed as follows: the platform 3 comprises a platform 3 body and support legs 5. The support legs 5 are provided at the side of the main body of the platform 3 for supporting the main body of the platform 3. The heating assembly is located directly below the body of the platform 3. The heating assembly is positioned in the space enclosed by the supporting legs 5.

The heating element can also be embedded in the platform 3, so that an embedding hole for inserting the heating element is needed to be arranged in the platform 3. Therefore, compared with the prior art, the technical scheme that the heating component is arranged below the main body of the platform 3 is simpler and easier to realize.

During annealing, the heating assembly heats the substrate 2 to 80-150 ℃. In this temperature range, the annealing effect of the film layer 1 is optimal.

The heating assembly is preferably a quartz heating tube 4 in the present invention. The quartz heating has the characteristics of fast temperature rise, small thermal inertia and no pollution. The characteristic of fast temperature rise further can avoid the solvent volatilization of the film layer 1 in a natural state. The low thermal inertia is just advantageous for rapidly returning the substrate 2 to the initial temperature after the annealing is finished, so as to prepare the next film layer 1. The pollution-free characteristic provides a clean annealing environment for the film layer 1 so as to ensure the quality of the finished perovskite battery.

It should be noted that the control switch is used for controlling the on-off of the quartz heating tube 4. When the control switch is turned on, the power supply is switched on, and the quartz heating tube 4 starts to generate heat. After the control switch is turned off, the power supply is cut off, and the quartz heating tube 4 stops heating.

In order to uniformly heat the substrate 2, a plurality of quartz heating tubes 4 are provided. A plurality of quartz heating pipes 4 are uniformly arranged in a row.

It should be noted that the substrate 2 is disposed on the platform 3, and the substrate 2 needs to be fixed during the process of coating the film layer 1. For this purpose, the present invention provides suction holes in the stage 3. The adsorption holes are distributed uniformly relative to the substrate 2. All the adsorption holes are communicated with a negative pressure pump. In the process of scraping the coating film layer 1, a negative pressure pump is started to enable the adsorption holes to generate negative pressure, so that the substrate 2 is firmly adsorbed.

Finally, it should also be noted that the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.

The embodiments in the present description are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same and similar parts among the embodiments are referred to each other.

The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the utility model. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. An in-situ annealing film forming device for a perovskite solar cell is characterized by comprising:

a substrate;

a stage on which the substrate is disposed;

2. The perovskite solar cell in-situ annealing film forming device as claimed in claim 1, wherein the heating assembly is disposed below the platform, and heat of the heating assembly is transferred to the substrate in a thermal radiation manner.

3. The perovskite solar cell in-situ annealing film forming device as claimed in claim 1, wherein the platform is made of high temperature resistant glass.

4. The in-situ annealing film forming device for the perovskite solar cell as claimed in claim 3, wherein the high temperature resistant glass is Gaopc silica glass or quartz glass.

5. The perovskite solar cell in-situ annealing film forming device as claimed in claim 2, wherein the platform comprises a platform main body and support legs, the support legs are arranged at the side part of the platform main body and used for supporting the platform main body, and the heating assembly is positioned right below the platform main body.

6. The in-situ annealing and film-forming device for the perovskite solar cell as claimed in claim 1, wherein the heating component is a quartz heating tube, and the control switch is used for controlling the on-off of the quartz heating tube.

7. The perovskite solar cell in-situ annealing and film forming device as claimed in claim 6, wherein the quartz heating pipes are multiple, and the multiple quartz heating pipes are arranged in a row.

8. The perovskite solar cell in-situ annealing film forming device as claimed in claim 1, wherein the platform is provided with an adsorption hole, the adsorption hole is communicated with a negative pressure pump, and the adsorption hole is used for adsorbing the substrate.