CN215975555U

CN215975555U - Semi-reflecting and semi-permeable film glass

Info

Publication number: CN215975555U
Application number: CN202121137448.XU
Authority: CN
Inventors: 曾小绵
Original assignee: Guangdong Kibing Energy Saving Glass Co ltd
Current assignee: Guangdong Kibing Energy Saving Glass Co ltd
Priority date: 2021-05-25
Filing date: 2021-05-25
Publication date: 2022-03-08
Anticipated expiration: 2031-05-25

Abstract

The utility model discloses a semi-reflective and semi-transparent film glass, wherein the visible light reflectivity of the semi-reflective and semi-transparent film glass is not less than 25% and not more than 75%, the semi-reflective and semi-transparent film glass comprises a substrate, and a first dielectric layer, a second dielectric layer, a third dielectric layer, a fourth dielectric layer and a fifth dielectric layer which are sequentially arranged from the substrate to the outside; according to the utility model, the film layer is formed on the surface of the substrate by adopting the first dielectric layer to the fifth dielectric layer, so that the reflection light and the light transmittance of the semi-reflective and semi-transparent film glass during heat treatment are easier to control, and the stability of the performance of the semi-reflective and semi-transparent film glass after being tempered is further improved.

Description

Semi-reflecting and semi-permeable film glass

Technical Field

The utility model relates to the field of coated glass, in particular to semi-reflecting and semi-permeable coated glass.

Background

The semi-reflective and semi-transparent coated glass is widely applied to products such as indoor decorative intelligent mirrors, electronic products, automobile parts and the like so as to realize the semi-reflective and semi-transparent optical effect. The half-reflecting and half-transmitting film glass film layer is generally laminated by TiO2, NbOx and SiO2, and due to the adoption of TiO2, NbOx and SiO2 materials, valence state change can occur under the heat treatment bending and tempering process and ultraviolet irradiation, the film layer color is changed after the valence state change, the refractive index is different, the optical structure is problematic, and the optical effect of the half-reflecting and half-transmitting film glass is influenced; the film system has lower hardness, and the coated glass is easy to scratch in the subsequent processing, thereby influencing the appearance of the coated glass; meanwhile, the film system has poor adhesion, and is easy to cause demoulding and poor in optical effect.

SUMMERY OF THE UTILITY MODEL

The utility model mainly aims to provide a semi-reflective and semi-transparent film glass, aiming at solving the problem that the optical effect is poor after the existing semi-reflective and semi-transparent film is subjected to heat treatment.

In order to achieve the purpose, the transflective film glass provided by the utility model has a visible light reflectivity not less than 25% and not more than 75%, and comprises a substrate, and a first dielectric layer, a second dielectric layer, a third dielectric layer, a fourth dielectric layer and a fifth dielectric layer which are sequentially arranged from the substrate to the outside;

wherein: the first dielectric layer is one or more of a silicon nitride layer, a silicon zirconium nitride layer, a silicon titanium oxide layer, a silicon aluminum nitride layer and a niobium zirconium oxide layer, and the thickness of the first dielectric layer is not less than 20nm and not more than 50 nm;

the second dielectric layer is a boron oxide silicon layer or a silicon aluminum oxide layer, and the thickness of the second dielectric layer is not less than 80nm and not more than 105 nm;

the third dielectric layer is one or more of a silicon nitride layer, a silicon zirconium nitride layer, a silicon titanium oxide layer, a silicon aluminum nitride layer and a niobium zirconium oxide layer, and the thickness of the third dielectric layer is not less than 40nm and not more than 60 nm;

the fourth dielectric layer is a boron oxide silicon layer or a silicon aluminum oxide layer, and the thickness of the fourth dielectric layer is not less than 78nm and not more than 100 nm;

the fifth dielectric layer is one or more of a silicon aluminum nitride layer, a silicon zirconium aluminum nitride layer, a zirconium oxide layer and a tin oxide layer, and the thickness of the fifth dielectric layer is not less than 60nm and not more than 90 nm.

Optionally, the semi-reflecting and semi-permeable membrane glass has a visible light reflectivity not less than 25% and not more than 75%.

Optionally, the glass surface color coordinate value of the semi-reflecting and semi-permeable membrane glass is-10.5 ≤ a ≤ 7.5, -3 ≤ b ≤ 0.2; and/or the transmittance of the semi-reflecting and semi-permeable membrane glass is not less than 22% and not more than 40%.

Optionally, the first dielectric layer is a silicon titanium oxide layer, or the first dielectric layer is a silicon zirconium aluminum nitride layer with 18.25% of zirconium by mass;

and/or the third dielectric layer is a silicon titanium oxide layer, or the first dielectric layer is a silicon zirconium aluminum nitride layer with 18.25 mass percent of zirconium.

Optionally, the thickness of the first dielectric layer is not less than 25nm and not more than 40 nm.

Optionally, the thickness of the second dielectric layer is not less than 85nm and not more than 95 nm.

Optionally, the thickness of the third dielectric layer is not less than 45nm and not more than 55 nm.

Optionally, the thickness of the fourth dielectric layer is not less than 78nm and not more than 90 nm.

Optionally, the thickness of the fifth dielectric layer is not less than 65nm and not more than 80 nm.

Optionally, the first dielectric layer, the second dielectric layer, the third dielectric layer, the fourth dielectric layer, and the fifth dielectric layer are sequentially formed by intermediate frequency power supply plus rotating cathode sputtering deposition.

Optionally, the intermediate frequency power source and the rotating cathode sputtering are performed in an argon nitrogen or argon oxygen atmosphere, wherein a flow ratio of argon/nitrogen is 0.875 to 1.142, and a flow ratio of argon/oxygen is 0.67 to 1.5.

According to the technical scheme, the film layers are formed on the surface of the substrate by the first dielectric layer to the fifth dielectric layer, so that the reflection light and the light transmittance of the semi-reflective and semi-transparent film glass during heat treatment are easier to control, and the stability of the performance of the semi-reflective and semi-transparent film glass after tempering is improved.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the structures shown in the drawings without creative efforts.

FIG. 1 is a schematic structural view of an embodiment of the transflective glass of the present invention;

FIG. 2 is a flow chart of an embodiment of the method for preparing the semi-reflecting and semi-permeable membrane glass of the utility model.

The reference numbers illustrate:

reference numerals	Name (R)	Reference numerals	Name (R)
				10	Substrate	20	A first dielectric layer
30	A second dielectric layer	40	A third dielectric layer
				50	A fourth dielectric layer	60	A fifth dielectric layer

The implementation, functional features and advantages of the objects of the present invention will be further explained with reference to the accompanying drawings.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that, if directional indications (such as up, down, left, right, front, and back … …) are involved in the embodiment of the present invention, the directional indications are only used to explain the relative positional relationship between the components, the movement situation, and the like in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indications are changed accordingly.

In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.

The utility model provides semi-reflective and semi-transparent film glass, which is provided with a substrate 10 and a film layer, wherein the substrate 10 can be glass, and the film layer is formed by a composite film layer. The semi-reflecting and semi-permeable film glass is used for products such as electronic product display screens or touch screens, automobile rearview mirrors and the like. Fig. 1 and 2 are corresponding drawings of an embodiment of the present invention.

Referring to fig. 1, in an embodiment, the film layer includes a first dielectric layer 20, a second dielectric layer 30, a third dielectric layer 40, a fourth dielectric layer 50, and a fifth dielectric layer 60, which are sequentially disposed from the substrate 10; the visible light reflectivity of the semi-reflecting and semi-permeable film glass is not less than 25% and not more than 75%.

Wherein: the first dielectric layer 20 is one or more of a silicon nitride layer, a silicon zirconium nitride layer, a silicon titanium oxide layer, a silicon aluminum nitride layer and a niobium zirconium oxide layer, and the thickness of the first dielectric layer 20 is not less than 20nm and not more than 50 nm; taking the first dielectric layer 20 as an aluminum zirconium silicon nitride layer (SiZrAlNx) as an example, the refractive index of the first dielectric layer 20 is between 1.8 and 2.3, and in one embodiment, the mass percentage of zirconium (Zr) in the SiZrAlNx is 18.25-36.5%.

The second dielectric layer 30 is a boron oxide silicon layer or a silicon aluminum oxide layer, and the thickness of the second dielectric layer 30 is not less than 80nm and not more than 105 nm; the refractive index of the first dielectric layer 20 is greater than the refractive index of the second dielectric layer 30. Taking the second dielectric layer 30 as an aluminum silicon oxide layer (SiAlOx) as an example, the refractive index of the second dielectric layer 30 is between 1.40 and 1.55.

The third dielectric layer 40 is one or more of a silicon nitride layer, a silicon zirconium nitride layer, a silicon titanium oxide layer, a silicon aluminum nitride layer and a niobium zirconium oxide layer, and the thickness of the third dielectric layer 40 is not less than 40nm and not more than 60 nm; the refractive index of the third dielectric layer 40 is greater than the refractive index of the second dielectric layer 30. Taking the third dielectric layer 40 as an aluminum zirconium silicon nitride layer (SiZrAlNx) as an example, the refractive index of the third dielectric layer 40 is between 1.8 and 2.3, and in one embodiment, the mass percentage of zirconium (Zr) in the SiZrAlNx is 18.25-36.5%.

The fourth dielectric layer 50 is a boron oxide silicon layer or a silicon aluminum oxide layer, and the thickness of the fourth dielectric layer 50 is not less than 78nm and not more than 100 nm; the refractive index of the fourth dielectric layer 50 is less than the refractive index of the third dielectric layer 40. Taking the fourth dielectric layer 50 as an aluminum silicon oxide layer (SiAlOx) as an example, the refractive index of the fourth dielectric layer 50 is between 1.40 and 1.55.

The fifth dielectric layer 60 is one or more of a silicon aluminum nitride layer, a silicon zirconium aluminum nitride layer, a zirconium oxide layer and a tin oxide layer, and the thickness of the fifth dielectric layer 60 is not less than 60nm and not more than 90 nm. The refractive index of the fifth dielectric layer 60 is greater than the refractive index of the fourth dielectric layer 50. Taking the fifth dielectric layer 60 as an aluminum silicon nitride layer (SiAlNx) as an example, the refractive index of the fifth dielectric layer 60 is between 1.9 and 2.2, and in an embodiment, the mass percentage of aluminum in the SiAlNx is 9-10%.

The film layer is composed of five dielectric layers, wherein the five dielectric layers are formed by alternating layers of high-refractive-index dielectric materials and low-refractive-index dielectric materials, so that after the film layer is subjected to a heat treatment process, the film layer can keep a preset state, the film layer is prevented from generating valence state change under the conditions of tempering and ultraviolet irradiation, and the glass product has better tempering performance. After tempering, the visible light reflectivity of the semi-reflecting and semi-permeable film glass product is not less than 25% and not more than 75%. When the mirror surface reflection type display screen is used for a display screen or a glass surface of an electronic product, the display screen or the glass surface of the electronic product can have a semi-reflection and semi-transmission effect, and the mirror surface reflection type display screen has a mirror reflection effect in a standby state of the product, can be used as a mirror surface, and can normally display the product when the display screen is used as a display screen of the product and is electrified; when the glass surface mirror is used for the rear cover of a product and the like, the rear cover surface of the product has a mirror reflection effect, and the attractiveness of the product is further improved. When the product is used for products such as vehicle-mounted rearview mirrors, the product has a semi-reflecting and semi-transmitting effect, the product cannot perform total reflection on light, and the user can see pictures more easily through the projection and transmission effect of a partial reflection part. Optionally, the glass surface and the film surface of the semi-reflecting and semi-permeable film glass product are green, the coordinate value of the glass surface color is-10.5 to-7.5 a and-3 to-0.2 b, and the transmittance T is 22-40%.

By adopting the dielectric layer material, the product can have better heat treatment performance, after the product is subjected to toughening treatment, the adhesion performance between different film layers is better, the whole film layer can have stronger adhesion force on the substrate 10, and the demoulding is not easy to generate. Due to the selection of the film material and the thickness, after the heat treatment, the film can be conveniently subjected to subsequent processing, and has better bending and further processing performances. The film layer can form stable chemical bonds on the surface of the substrate 10, and the film layer is not easy to fall off in the processing processes of further bending, cutting and the like, and the adhesive property of the film layer is not influenced, so that the reprocessing performance of the product is improved. Through promoting the reprocessing performance of product, add man-hour such as the product is crooked, cut, the rete can remain stable, and then make the product be used for products such as display screen, rear-view mirror after, can half the anti semi-transparent effect of stable, and then promote the quality of product.

Because the product can keep stable glass face and membrane face color after heat treatment, the product can also keep a preset color state in the further processing process, and further the stability of the product can be improved. Through adopting above-mentioned material and thickness setting, the product still can remain stable glass face and face colour state when being heated or ultraviolet irradiation, and then promotes the appearance stability of product, promotes user experience. Because the film layer does not contain TiO2 and niobium oxide, the color difference caused by the valence state change before and after heat treatment can be effectively avoided. Meanwhile, the coating has excellent hardness, and can effectively protect the coated glass from scratches so as to avoid affecting the appearance. The product can block ultraviolet rays, can be used in a single piece or in any interlayer, can be subjected to Qiang Huu treatment such as toughening and hot bending at will, has good glass aesthetic feeling, has high mechanical durability regardless of the incident angle and good resistance to heat treatment (annealing, toughening, bending and folding), and can be manufactured under the condition of not damaging the economic and/or industrial feasibility of the product.

The dielectric layer can control reflectivity and transmissivity, simultaneously plays a role in connecting the glass and the functional layer, can have good adhesion with the glass, relieves internal stress of the whole film layer, and improves the scratch resistance, wear resistance and corrosion resistance of the glass. During processing, a magnetron sputtering process can be adopted, and a medium-frequency power supply with the frequency of 40kHz and good arc extinguishing performance is adopted to be formed by sputtering with a rotating cathode, so that the conditions of film discharging stripes and pinhole defects are eliminated, the good matching of the refractive index is realized, and the reflectivity and the transmittance of the product reach the preset value range.

The first dielectric layer 20 is directly attached to the substrate 10 as the innermost layer of the film, and the first dielectric layer 20 may be formed directly by magnetron sputtering. By using one or more of a silicon nitride layer, a silicon zirconium nitride layer, a silicon titanium oxide layer, a silicon aluminum nitride layer, and a niobium zirconium oxide layer, the first dielectric layer 20 can partially penetrate into the substrate 10, so that the first dielectric layer 20 has better adhesion. The thickness of the first dielectric layer 20 is between 20nm and 50nm, and the thickness of the first dielectric layer 20 can be selected from 20nm, 25nm, 30nm, 35nm, 40nm, 45nm or 50nm, and other values between 20nm and 50nm can also be selected. In an embodiment, the thickness of the first dielectric layer 20 is not less than 25nm and not more than 40nm, and the thickness of the first dielectric layer 20 may be any of 26nm, 28nm, 32nm, 36nm or 40 nm. Optionally, the first dielectric layer 20 is a silicon titanium oxide layer, or the first dielectric layer 20 is a silicon zirconium aluminum nitride layer with a zirconium mass percent of 18.25%.

The second dielectric layer 30 is disposed on a side of the first dielectric layer 20 opposite to the substrate 10, and the second dielectric layer 30 may be formed by magnetron sputtering. The second dielectric layer 30 is a boron oxide silicon layer or a silicon aluminum oxide layer. The thickness of the second dielectric layer 30 is not less than 80nm and not more than 105nm, and any one of the thicknesses of the second dielectric layer 30 may be 80nm, 85nm, 90nm, 95nm, 100nm or 105 nm. The refractive index of the second dielectric layer 30 is smaller than that of the first dielectric layer 20, so that the first dielectric layer 20 is not easily detached from the substrate 10 when the toughening treatment is performed. In an embodiment, the thickness of the second dielectric layer 30 is not less than 85nm and not more than 95nm, and the thickness of the second dielectric layer 30 may be any of 86nm, 89nm or 92 nm.

The third dielectric layer 40 is disposed on a side of the second dielectric layer 30 opposite to the first dielectric layer 20, and the third dielectric layer 40 may be formed by magnetron sputtering. The third dielectric layer 40 is one or more of a silicon nitride layer, a silicon zirconium nitride layer, a silicon titanium oxide layer, a silicon aluminum nitride layer and a niobium zirconium oxide layer, the refractive index of the material adopted by the third dielectric layer 40 is larger than that of the material selected by the second dielectric layer 30, and meanwhile, the thickness of the third dielectric layer 40 is not smaller than 40nm and not larger than 60nm, so that the effect of improving the heat treatment performance of the product can be achieved. The thickness of the third dielectric layer 40 may be selected from any of 40nm, 45nm, 50nm, 55nm, or 60 nm. In an embodiment, the thickness of the third dielectric layer 40 is not less than 45nm and not more than 55nm, and any thickness of 46nm, 48nm or 52nm may be selected for the third dielectric layer 40. Optionally, the third dielectric layer 40 is a silicon titanium oxide layer, or the first dielectric layer 20 is a silicon zirconium aluminum nitride layer with a zirconium mass percent of 18.25%.

The fourth dielectric layer 50 is disposed on a side of the third dielectric layer 40 opposite to the second dielectric layer 30, and the fourth dielectric layer 50 may be formed by magnetron sputtering. The fourth dielectric layer 50 is a boron oxide silicon layer or a silicon aluminum oxide layer, the thickness of the fourth dielectric layer 50 is not less than 78nm and not more than 100nm, and any thickness of the fourth dielectric layer 50 may be selected from 78nm, 83nm, 89nm, 94nm or 100 nm. In an embodiment, the thickness of the fourth dielectric layer 50 is not less than 78nm and not more than 90nm, and the thickness of the fourth dielectric layer 50 may be 80nm, 85nm or 90 nm. The refractive index of the fourth dielectric layer 50 is smaller than that of the third dielectric layer 40, and the thickness of the fourth dielectric layer 50 is larger than that of the third dielectric layer 40, so as to improve the stability of the film layer during heat treatment.

The fifth dielectric layer 60 is used as the outermost layer of the film layer, and can protect a product, and the fifth dielectric layer 60 can be formed by a magnetron sputtering method. Since the fifth dielectric layer 60 is one or more of a silicon aluminum nitride layer, a silicon zirconium aluminum nitride layer, a zirconium oxide layer, and a tin oxide layer, the fifth dielectric layer 60 has high hardness during tempering treatment, and is not easily damaged. After the heat treatment of the product, the fifth dielectric layer 60 serves as an outermost protective layer of the product, and can prevent the film layer from being damaged. Meanwhile, the thickness of the fifth dielectric layer 60 is between 60nm and 90nm, so that the scratch resistance of the fifth dielectric layer 60 is stronger. The thickness of the fifth dielectric layer 60 can be selected from any thickness of 60nm, 65nm, 70nm, 75nm, 80nm, 85nm or 90nm, and when the fifth dielectric layer 60 is tempered, the fifth dielectric layer can play a role in preventing the remaining four dielectric layers from being deformed, preventing the dielectric layers positioned on the inner side from being deformed, and improving the performance of tempering, hot bending and the like of the product. In an embodiment, the thickness of the fifth dielectric layer 60 is not less than 65nm and not more than 80nm, and the thickness of the fifth dielectric layer 60 may be any of 68nm, 72nm or 77 nm.

In an embodiment, the substrate 10 is glass, and the first dielectric layer 20 to the fifth dielectric layer 60 are SiZrAlNx, SiAlOx, and SiAlNx, respectively, where the SiZrAlNx is a high refractive index layer, the SiAlOx is a low refractive index layer, and the SiAlNx is a protective layer. Atoms in the SiZrAlNx layer can enter the glass surface to form stable chemical bonds on the glass surface, so that the adhesion is increased, and the weather resistance and heat resistance are enhanced. The SiZrAlNx layer does not contain TiO2 and niobium oxide, and can effectively avoid valence state change before and after heat treatment to cause chromatic aberration. Meanwhile, the SiAlNx layer has excellent hardness, and can effectively protect the coated glass from scratches. In the formed product, the visible light reflectivity in sunlight can be controlled between 25% and 75% on the glass surface and the film surface of the glass. Since transflective films are generally composed of multiple layers comprising thin layers of interference, alternating layers based on a dielectric material of high refractive index and a dielectric material of low refractive index. When the film is deposited on the transparent substrate, the film layer can effectively play a role in controlling the light reflection and the light transmittance of the product. Thus, the substrate 10 thus coated will allow for flexible matching of the ratio of transmitted light/reflected light, thereby masking the visibility controllability of objects placed behind it. When seeking to obtain maximum visibility-obscuring effects, it is preferable to provide this type of film layer on both sides of the substrate.

In one embodiment, the heat resistance and the stability of the optical properties before and after heat treatment of the SiZrAlNx, SiBOx, SiAlNx, ZrOx and other materials are utilized to enable a new material SiZrAlNx and SiAlOx to be matched and overlapped in a symmetrical high refractive index mode and a symmetrical low refractive index mode, and the SiZrAlNx and the material are combined to enable the material to be better suitable for high temperature and wear resistance during heat treatment.

The bendable tempered semi-reflective semi-transparent film glass manufactured by adopting the film layer structure has the advantages that the visible light reflectivity of the glass surface and the film surface is 25-75%, and the colors of the two surfaces are light green; the color of the glass surface and the color of the film surface are green, the color coordinate value of the glass surface is-10.5-7.5 a, b-0.2-3 b, and the transmittance T is 22-40%. The film layer has the advantages of being capable of being used by any interlayer and single sheet, and capable of being subjected to strengthening treatment such as tempering and hot bending at will, and simultaneously ensures the following characteristics: has good glass aesthetic feeling; the color is stable regardless of the incident angle; the mechanical durability is high; good resistance to thermal treatments (annealing, toughening, bending, folding) and can be made without compromising the economic and/or industrial feasibility of its manufacture, facilitating wide spread.

The utility model also discloses an embodiment of a preparation method of the semi-reflecting and semi-permeable membrane glass, which is used for preparing the semi-reflecting and semi-permeable membrane glass in the embodiment.

Referring to fig. 2, the preparation method includes the following steps:

s100: providing a substrate; the substrate may be a glass substrate as a carrier for the film layer.

S200: forming a first dielectric layer 20 with the thickness not less than 20nm and not more than 50nm on the substrate by sputtering and depositing an intermediate frequency power supply and a rotating cathode, wherein the first dielectric layer 20 is one or more of a silicon nitride layer, a silicon zirconium nitride layer, a silicon titanium oxide layer, a silicon aluminum nitride layer and a niobium zirconium oxide layer;

s300: forming a second dielectric layer 30 with a thickness not less than 80nm and not more than 105nm by sputtering and depositing an intermediate frequency power supply and a rotating cathode on the side of the first dielectric layer 20 opposite to the substrate 10, wherein the second dielectric layer 30 is a boron oxide silicon layer or a silicon aluminum oxide layer;

s400: forming a third dielectric layer 40 with a thickness not less than 40nm and not more than 60nm by sputtering and depositing a medium frequency power supply and a rotating cathode on a side of the second dielectric layer 30 opposite to the first dielectric layer 20, wherein the third dielectric layer 40 is one or more of a silicon nitride layer, a silicon zirconium nitride layer, a silicon titanium oxide layer, a silicon aluminum nitride layer and a niobium zirconium oxide layer;

s500: forming a fourth dielectric layer 50 with a thickness not less than 78nm and not more than 100nm by sputtering and deposition of an intermediate frequency power supply and a rotating cathode on a side of the third dielectric layer 40 opposite to the second dielectric layer 30, wherein the fourth dielectric layer 50 is a boron oxide silicon layer or a silicon aluminum oxide layer; and

s600: and forming a fifth dielectric layer 60 with a thickness not less than 60nm and not more than 90nm by sputtering and depositing a medium frequency power supply and a rotating cathode on a side of the fourth dielectric layer 50 opposite to the third dielectric layer 40, wherein the fifth dielectric layer 60 is one or more of a silicon aluminum nitride layer, a silicon zirconium aluminum nitride layer, a zirconium oxide layer and a tin oxide layer.

In one embodiment, the intermediate frequency power source and the rotating cathode sputtering deposition process are performed in an argon-nitrogen or argon-oxygen atmosphere, wherein the flow ratio of argon/nitrogen is 0.875 to 1.142, and the flow ratio of argon/oxygen is 0.67 to 1.5. The dielectric layer can be formed by sputtering a medium frequency power supply with a frequency of 40kHz and a rotating cathode.

In an embodiment, the substrate 10 is glass, and the film layer sequentially includes SiZrAlNx, SiAlOx, and SiAlNx.

In this embodiment, the first dielectric layer 20 is a SiZrAlNx layer with a thickness of 30 nm.

In this embodiment, the second dielectric layer 30 is a SiBOx layer with a thickness of 87 nm.

In this embodiment, the third dielectric layer 40 is a SiZrAlNx layer with a thickness of 50 nm.

In this embodiment, the fourth dielectric layer 50 is a SiBOx layer with a thickness of 80 nm.

In this embodiment, the fifth dielectric layer 60 is a SiZrAlNx layer and has a thickness of 70 nm.

When the preparation method in the embodiment is adopted, the deposition of the SiZrAlNx layer is carried out in an argon nitrogen atmosphere by adopting a medium-frequency power supply and a rotating cathode, the power of a vacuum magnetron sputtering device is 60-70 kW, and the frequency of the medium-frequency power supply is 40 kHz.

The deposition of the SiAlOx layer is carried out in an argon oxygen atmosphere by adopting an intermediate frequency power supply and a rotating cathode, the power of the vacuum magnetron sputtering equipment is 50-60 kW, and the frequency of the intermediate frequency power supply is 40 kHz.

The resulting transflective glass had the following optical and thermal properties: the visible light reflectivity of the glass surface and the film surface is between 25 and 75 percent; the double-side color is light green and can block ultraviolet rays, the film layer has the advantages of being capable of being used by any interlayer and single sheet, capable of being toughened, thermally bent and the like, and the following characteristics are ensured at the same time: has good aesthetic feel of the glass, is colour-stable regardless of the angle of incidence, has high mechanical durability, and has good resistance to thermal treatments (annealing, toughening, bending, folding), and can be made without compromising the economic and/or industrial feasibility of its manufacture.

In another embodiment, the substrate 10 is glass, and the film layer sequentially comprises SiZrAlNx, SiAlOx, and SiZrNx.

In this embodiment, the first dielectric layer 20 is a SiZrAlNx layer with a thickness of 35 nm.

In this embodiment, the second dielectric layer 30 is a SiAlOx layer with a thickness of 90 nm.

In this embodiment, the third dielectric layer 40 is a SiZrAlNx layer with a thickness of 55 nm.

In this embodiment, the fourth dielectric layer 50 is a SiAlOx layer with a thickness of 85 nm.

In this embodiment, the fifth dielectric layer 60 is a SiZrNx layer and has a thickness of 75 nm.

When the above preparation method is adopted:

the deposition of the SiZrAlNx layer is carried out in an argon nitrogen atmosphere by adopting a medium-frequency power supply and a rotating cathode, the power of a vacuum magnetron sputtering device is 60-70 kW, and the frequency of the medium-frequency power supply is 40 kHz.

The optical and thermal properties of the resulting product were as follows: the visible light reflectivity of the glass surface and the film surface is between 25 and 75 percent; the colors of the two surfaces are light green, and can block ultraviolet rays; the laminated steel plate has the advantages of being capable of using any interlayer and single sheet, and performing strengthening treatment such as tempering and hot bending at will, and simultaneously ensures the following characteristics: has a good aesthetic feel of the glass, a high mechanical durability, regardless of the angle of incidence, and a good resistance to thermal treatments (annealing, toughening, bending, folding), and can be made without compromising the economic and/or industrial feasibility of its manufacture.

Claims

1. The transflective film glass is characterized in that the visible light reflectivity of the transflective film glass is not less than 25% and not more than 75%, and the transflective film glass comprises a substrate, and a first dielectric layer, a second dielectric layer, a third dielectric layer, a fourth dielectric layer and a fifth dielectric layer which are sequentially arranged from the substrate to the outside;

2. The transflective film glass according to claim 1, wherein the glass surface color coordinate value of the transflective film glass is-10.5 ≤ a ≤ 7.5, -3 ≤ b ≤ 0.2; and/or the transmittance of the semi-reflecting and semi-permeable membrane glass is not less than 22% and not more than 40%.

3. The transflective film glass according to claim 1, wherein the first dielectric layer is a titanium silicon oxide layer;

and/or the third dielectric layer is a silicon titanium oxide layer.

4. The transflective film glass according to any one of claims 1 to 3, wherein the thickness of the first dielectric layer is not less than 25nm and not more than 40 nm.

5. The transflective film glass according to any one of claims 1 to 3, wherein the thickness of the second dielectric layer is not less than 85nm and not more than 95 nm.

6. The transflective film glass according to any one of claims 1 to 3, wherein the thickness of the third dielectric layer is not less than 45nm and not more than 55 nm.

7. The transflective film glass according to any one of claims 1 to 3, wherein the thickness of the fourth dielectric layer is not less than 78nm and not more than 90 nm.

8. The transflective film glass according to any one of claims 1 to 3, wherein the thickness of the fifth dielectric layer is not less than 65nm and not more than 80 nm.

9. The half-reflecting half-transparent film glass according to any one of claims 1 to 3, wherein the first dielectric layer, the second dielectric layer, the third dielectric layer, the fourth dielectric layer and the fifth dielectric layer are formed by intermediate frequency power supply and rotating cathode sputtering deposition in sequence.