CN215947456U - Crystal pulling temperature control system for high-frequency induction single crystal furnace - Google Patents

Crystal pulling temperature control system for high-frequency induction single crystal furnace Download PDF

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Publication number
CN215947456U
CN215947456U CN202121328740.XU CN202121328740U CN215947456U CN 215947456 U CN215947456 U CN 215947456U CN 202121328740 U CN202121328740 U CN 202121328740U CN 215947456 U CN215947456 U CN 215947456U
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single crystal
crystal furnace
fixedly arranged
furnace
temperature
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姜非
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Kou Jing Shanghai Technology Co ltd
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Kou Jing Shanghai Technology Co ltd
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Abstract

The utility model discloses a crystal pulling temperature control system of a high-frequency induction single crystal furnace, which comprises a base, the single crystal furnace and a control platform, wherein: the crystal pulling temperature automatic adjusting device is characterized in that a single crystal furnace is fixedly arranged on the left side of the top of a base, a control console is fixedly arranged on the right side of the top of the base, a crucible shaft is fixedly arranged at the center of the bottom of the single crystal furnace and connected with a lifting platform, an inner shell is connected and arranged on the periphery of the lifting platform, a top cover is fixedly arranged on the top of the single crystal furnace and connected with a rotating cylinder.

Description

Crystal pulling temperature control system for high-frequency induction single crystal furnace
Technical Field
The utility model belongs to the technical field of crystal pulling temperature control of single crystal furnaces, and particularly relates to a crystal pulling temperature control system of a high-frequency induction single crystal furnace.
Background
The single crystal furnace is a device for melting polycrystalline materials such as polycrystalline silicon and the like by using a graphite heater in an inert gas (mainly nitrogen and helium) environment and growing dislocation-free single crystals by using a Czochralski method.
The diameter of the single crystal can be influenced by factors such as temperature, pulling speed and rotating speed, crucible tracking speed and rotating speed, flow rate of protective gas and the like in the growth process. The temperature mainly determines whether the crystal can be formed, and the speed directly influences the inherent quality of the crystal, and the influence can only be known through detection after the single crystal is pulled out. The thermal field with proper temperature distribution not only can lead the single crystal to grow smoothly, but also has higher quality; if the temperature distribution of the thermal field is not reasonable, various defects are easily generated in the process of growing the single crystal, the quality is affected, and the single crystal cannot grow out due to the phenomenon of crystal transformation under serious conditions. Therefore, in the early stage of investing in a single crystal growth enterprise, the most reasonable thermal field must be configured according to growth equipment, so that the quality of the produced single crystal is ensured.
Heretofore, a temperature control meter control technology is mainly used, and the technology has the defects of unstable temperature, incapability of controlling the temperature in real time in the use process, inconvenience in debugging the crystal pulling process and incapability of ensuring the product quality, so that improvement is needed.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a crystal pulling temperature control system of a high-frequency induction single crystal furnace, which aims to solve the technical problem.
In order to achieve the purpose, the utility model provides the following technical scheme: a crystal pulling temperature control system of a high-frequency induction single crystal furnace comprises a base, the single crystal furnace and a control platform, wherein:
the single crystal furnace is fixedly arranged on the left side of the top of the base, and the control console is fixedly arranged on the right side of the top of the base;
the crucible shaft is fixedly arranged at the center of the bottom of the single crystal furnace, the crucible shaft is connected with the lifting platform, the inner shell is connected and arranged at the periphery of the lifting platform, the top cover is fixedly arranged at the top of the single crystal furnace, and the rotating cylinder is connected and arranged on the top cover.
Preferably, the fixed sleeve that sets up in crucible axle top, sleeve peripheral connection sets up the heating pipe, just the heating pipe is annular spring tubulose, the inside elevating platform that sets up of sleeve, the fixed screw rod that sets up in elevating platform bottom, the elevating platform is connected at the screw rod top, just the screw rod runs through inside the crucible axle, just the connection of crucible axle below sets up the rolling disc, the rolling disc passes the peripheral fixed connection screw rod of crucible axle, just the heating pipe periphery sets up the inner shell, the fixed infrared temperature sensor that sets up in inner shell top.
Preferably, a cylindrical shell is arranged on the periphery of the single crystal furnace, a heat insulation layer is attached to the inner wall of the shell, a circular lamp holder is fixedly arranged at the top of the heat insulation layer, and a plurality of illuminating lamps are circumferentially fixed at the bottom of the lamp holder in an array manner.
Preferably, the top cover is fixedly arranged at the top of the shell, the rotating cylinder is fixedly arranged at the top of the top cover, the power device is connected and arranged at the top of the rotating cylinder, the seed crystal shaft is arranged in the rotating cylinder and connected with the power device at the top, the bottom of the seed crystal shaft extends into the single crystal furnace, the seed crystal chuck is fixedly arranged at the bottom of the seed crystal shaft, and the air inlet is formed in the top of the rotating cylinder and is provided with a vacuum pump interface at the bottom of the rotating cylinder.
Preferably, the infrared temperature measuring sensor is connected with a temperature controller, the right side of the top of the single crystal furnace is connected with an industrial camera, the industrial camera is connected with an image processing unit, and the temperature controller and the image processing unit are both connected with an FLC (flash controller) and a PI (proportional integral) controller.
The utility model has the technical effects and advantages that: the crystal pulling temperature control system for the high-frequency induction single crystal furnace has the following benefits:
1. a temperature controller is adopted as a main control signal; secondly, the AI identification is effectively carried out by adopting the PLC and the visual control technology, the crystal pulling temperature is automatically adjusted, the crystal growth stage of the crystal pulling can be distinguished through images, so that a temperature tracking compensation program is carried out, the program adopts the fuzzy technology, and the operation temperature can be adjusted in real time by matching with a crystal pulling temperature curve according to the temperature requirement of the crystal pulling process.
2. The complicated manual adjustment process is avoided through an automatic program. The energy-saving environment-friendly solar water heater is greatly improved in the aspects of manpower and material resources, saves the manpower and capital consumption, and is beneficial to promoting the development of energy conservation and environment protection.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic half-section view of the present invention;
FIG. 3 is a partial schematic view of the present invention;
FIG. 4 is a schematic view of a control center according to the present invention;
fig. 5 shows a temperature control routine according to the present invention.
In the figure: 1-base, S1-control center, S11-FLC controller, S12-temperature controller, S13-image processing unit, S14-temperature T, S15-PI controller, S16-A/D converter, 2-single crystal furnace, 21-outer shell, 22-insulating layer, 23-inner shell, 231-heating pipe, 232-sleeve, 233-lifting platform, 234-screw, 235-crucible shaft, 236-rotating disk, 237-infrared temperature sensor, 24-illuminating lamp, 25-lamp holder, 26-industrial camera, 27-top cover, 271-rotating cylinder, 272-seed shaft, 273-seed chuck, 274-air inlet, 275-vacuum pump interface, 276-power device, 3-control platform, 31-support seat, 32-control panel.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to fig. 1 to 5 in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The utility model provides a crystal pulling temperature control system for a high-frequency induction single crystal furnace, which comprises a base 1, a single crystal furnace 2 and a control platform 3, wherein the crystal pulling temperature control system comprises the following components:
the left side of the top of the base 1 is fixedly provided with a single crystal furnace 2, and the right side of the top of the base 1 is fixedly provided with a control console 3;
the crucible shaft 235 is fixedly arranged at the center of the bottom of the single crystal furnace 2, the crucible shaft 235 is connected with the lifting platform 233, the inner shell 23 is connected and arranged at the periphery of the lifting platform 233, the top cover 27 is fixedly arranged at the top of the single crystal furnace 2, and the rotating cylinder 271 is connected and arranged on the top cover 27.
Specifically, the fixed sleeve 232 that sets up in crucible shaft 235 top sets up through connecting at sleeve 232 periphery and setting up heating pipe 231, just heating pipe 231 is the ring spring tubulose for the product can be to the even heating of sleeve 232, the inside elevating platform 233 that sets up of sleeve 232, the fixed screw rod 234 that sets up in elevating platform 233 bottom, just screw rod 234 runs through inside the crucible shaft 235, just connect below the crucible shaft 235 and set up rolling disc 236, through passing the peripheral fixed connecting screw rod 234 of crucible shaft 235 with rolling disc 236, make the product can be through the lift of rotating disc 236 control screw rod 234 to the height of control elevating platform 233 is convenient for will change the crucible, just heating pipe 231 periphery sets up inner shell 23, the fixed infrared temperature sensor 237 that sets up in inner shell 23 top.
Specifically, 2 peripheries of single crystal growing furnace set up the shell 21 of tube-shape, set up heat preservation 22 through laminating at shell 21 inner wall for the product has good heat preservation effect, through at the fixed ring shape lighting fixture 25 that sets up in heat preservation 22 top, lighting fixture 25 bottom is the fixed a plurality of light 24 of circumference array, makes the product have good field of vision in 2 inside single crystal growing furnace.
Specifically, a top cover 27 is fixedly arranged at the top of the housing 21, a rotating cylinder 271 is fixedly arranged at the top of the top cover 27, a seed shaft 272 is arranged in the rotating cylinder 271 and connected with a top power device 276, the bottom of the seed shaft 272 extends into the single crystal furnace 2, a seed chuck 273 is fixedly arranged at the bottom of the seed shaft 272, an air inlet 274 is arranged at the top of the rotating cylinder 271, and a vacuum pump interface 275 is arranged at the bottom of the rotating cylinder 271.
Specifically, the infrared temperature sensor 237 is connected to a temperature controller S12, the industrial camera 26 is connected to an image processing unit S13, and the temperature controller S12 and the image processing unit S13 are both connected to an FLC controller S11 and a PI controller S15.
Specifically, the industrial camera 26 is arranged to acquire the crystal pulling image at a high speed, the industrial camera 26 is connected with the image processing unit S13, so that the product judges the crystal pulling state after the acquired image is processed by the image processing unit S13, the infrared temperature sensor 237 forms a temperature difference TS14 by acquiring the real-time temperature and the required temperature after the comparison with the database, the temperature TS14 judges whether the FLC controller S11 or the PI controller S15 is selected by the fuzzy operation, and the FLC controller S11 and the PI controller S15 adjust the required temperature of the heating pipe 231 through the temperature controller S12 after passing through the a/D conversion module, thereby completing the automatic control of the temperature.
The working principle is as follows: the crystal pulling temperature control system of the high-frequency induction single crystal furnace acquires crystal pulling images at a high speed through the industrial camera 26, judges the crystal pulling state through AI visual identification, performs Fuzzy operation with a crystal pulling temperature control program, outputs a temperature given signal and automatically controls the crystal pulling temperature.
An operator connects the vacuum pump interface 275 for vacuum processing by setting temperature at the beginning, in the crystal pulling process of the single crystal furnace 2, an industrial camera 26 is arranged for collecting crystal pulling images at high speed, the industrial camera 26 is connected with the image processing unit S13, so that the collected images of a product are processed by the image processing unit S13 to judge the crystal pulling state, after comparison with a database, the infrared temperature sensor 237 forms a temperature difference TS14 by collecting real-time temperature and required temperature, the temperature TS14 judges whether the FLC controller S11 or the PI controller S15 is selected by fuzzy operation, and the FLC controller S11 and the PI controller S15 regulate the required temperature of the heating pipe 231 by the temperature controller S12 after passing through an A/D conversion module, thereby completing automatic temperature control.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that modifications may be made to the embodiments or portions thereof without departing from the spirit and scope of the utility model.

Claims (5)

1. The utility model provides a crystal pulling temperature control system of high frequency induction single crystal growing furnace, includes base (1), single crystal growing furnace (2), control cabinet (3), its characterized in that:
a control center (S1) is fixedly arranged in the base (1);
the single crystal furnace (2) is fixedly arranged on the left side of the top of the base (1), and the control console (3) is fixedly arranged on the right side of the top of the base (1);
a crucible shaft (235) is fixedly arranged at the center of the bottom of the single crystal furnace (2), a heating pipe (231) is connected to the top of the crucible shaft (235), a sleeve (232) and a lifting table (233) are sequentially arranged from the heating pipe (231) to the center, an inner shell (23) is arranged on the periphery of the heating pipe (231), and an infrared temperature measuring sensor (237) is fixedly arranged at the top of the inner shell (23);
the top of the single crystal furnace (2) is connected with a plurality of illuminating lamps (24), and the right side of the top of the single crystal furnace (2) is connected with an industrial camera (26);
the top of the single crystal furnace (2) is connected with a rotating cylinder (271), and the top of the rotating cylinder (271) is connected with a power device (276);
the control center (S1) is internally provided with an FLC controller (S11), a temperature controller (S12), an image processing unit (S13), a temperature T (S14), a PI controller (S15) and an A/D converter (S16).
2. A pulling temperature control system of a high-frequency induction single crystal furnace as claimed in claim 1, wherein: the crucible shaft (235) is internally connected with a screw (234), the top of the screw (234) is connected with a lifting platform (233), and the bottom of the crucible shaft (235) is connected with a rotating disc (236) which is connected with the screw (234).
3. A pulling temperature control system of a high-frequency induction single crystal furnace as claimed in claim 1, wherein: the single crystal furnace is characterized in that a cylindrical shell (21) is arranged on the periphery of the single crystal furnace (2), a heat insulation layer (22) is attached to the inner wall of the shell (21), a circular ring-shaped lamp holder (25) is fixedly arranged at the top of the heat insulation layer (22), and a plurality of illuminating lamps (24) are fixed to the bottom of the lamp holder (25) in a circumferential array mode.
4. A pulling temperature control system of a high-frequency induction single crystal furnace as claimed in claim 3, characterized in that: the top cover (27) is fixedly arranged at the top of the shell (21), the top cover (27) is fixedly arranged at the top of the rotating cylinder (271), the rotating cylinder (271) is internally provided with a seed shaft (272) to be connected with a top power device (276), the bottom of the seed shaft (272) extends to the inside of the single crystal furnace (2), the bottom of the seed shaft (272) is fixedly provided with a seed chuck (273), the top of the rotating cylinder (271) is provided with an air inlet (274), and the bottom of the rotating cylinder (271) is provided with a vacuum pump interface (275).
5. A pulling temperature control system of a high-frequency induction single crystal furnace as claimed in claim 1, wherein: the infrared temperature measuring sensor (237) is connected with a temperature controller (S12), the industrial camera (26) is connected with an image processing unit (S13), and the temperature controller (S12) and the image processing unit (S13) are both connected with an FLC controller (S11) and a PI controller (S15).
CN202121328740.XU 2021-06-15 2021-06-15 Crystal pulling temperature control system for high-frequency induction single crystal furnace Active CN215947456U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202121328740.XU CN215947456U (en) 2021-06-15 2021-06-15 Crystal pulling temperature control system for high-frequency induction single crystal furnace

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202121328740.XU CN215947456U (en) 2021-06-15 2021-06-15 Crystal pulling temperature control system for high-frequency induction single crystal furnace

Publications (1)

Publication Number Publication Date
CN215947456U true CN215947456U (en) 2022-03-04

Family

ID=80505065

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202121328740.XU Active CN215947456U (en) 2021-06-15 2021-06-15 Crystal pulling temperature control system for high-frequency induction single crystal furnace

Country Status (1)

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CN (1) CN215947456U (en)

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