CN215947406U - Chemical vapor deposition furnace flow field control device - Google Patents

Chemical vapor deposition furnace flow field control device Download PDF

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Publication number
CN215947406U
CN215947406U CN202122522748.6U CN202122522748U CN215947406U CN 215947406 U CN215947406 U CN 215947406U CN 202122522748 U CN202122522748 U CN 202122522748U CN 215947406 U CN215947406 U CN 215947406U
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guide column
mixer
deposition furnace
distribution plate
chemical vapor
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Chinese (zh)
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朱文志
陈小飞
黄其勋
柳辉
王仕集
严加虎
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Guizhou Zian New Material Technology Co ltd
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Guizhou Zian New Material Technology Co ltd
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Abstract

The utility model relates to the technical field of equipment for preparing carbon-carbon composite materials by a chemical vapor deposition method, in particular to a flow field control device of a chemical vapor deposition furnace. The mixer is assembled in a deposition furnace and comprises a mixer arranged above an air inlet at the bottom of the deposition furnace, the top of the mixer is connected with a guide column, a baffle which is coaxial with the guide column and is positioned at the upper part of the guide column is arranged on the guide column, an air distribution plate is positioned in the space at the lower part of the guide column and is superposed with the top of the mixer, and different types of products are sequentially placed on the air distribution plate from inside to outside according to the size; the gas distribution plate divides the deposition furnace into at least one layer, carbon source gas and carrier gas are mixed at the mixer and then are distributed by the gas distribution plate, and gas is supplied from the second layer through the top through hole of the flow guide column. The device provided by the utility model is simple to assemble, increases the types and the number of furnace products, and improves the production quality and the production efficiency.

Description

Chemical vapor deposition furnace flow field control device
Technical Field
The utility model relates to the technical field of equipment for preparing carbon-carbon composite materials by a chemical vapor deposition method, in particular to a flow field control device of a chemical vapor deposition furnace.
Background
The carbon-carbon composite material has the excellent characteristics of ablation resistance, high specific strength, high specific heat capacity, low density, strong thermal shock resistance and the like, is widely applied to the fields of aerospace, automobile industry and medicine, and chemical vapor deposition is a commonly used method for preparing the carbon-carbon composite material.
The distribution of the carbon source gas in the deposition space and the uniformity of the flow field are important factors influencing the deposition effect of the workpiece. Uneven airflow distribution can cause uneven deposition thickness of a workpiece, influence product performance and prolong production time. Ensuring the uniform distribution of the flow field and increasing the variety and the number of products deposited once are problems to be solved urgently by manufacturers.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a flow field control device of a chemical vapor deposition furnace, which solves the problem of uneven distribution of a flow field in the deposition furnace and improves the production quality and the production efficiency.
In order to solve the technical problem, the scheme of the utility model is as follows:
a kind of chemical vapor deposition furnace flow field controlling device, it is assembled in deposition furnace, including the mixed flow device that is set up above the air inlet of the bottom of the deposition furnace, the top of the said mixed flow device connects the guide post, there is baffle coaxial with it and locating in its upper part on the said guide post, the gas distribution plate locates in the space of lower part of the said guide post and coincides with top of the said mixed flow device, the products of different grade type are put on the said gas distribution plate sequentially from small to big, from inside to outside according to the size of the size; the gas distribution plate divides the deposition furnace into at least one layer, carbon source gas and carrier gas are mixed at the mixer and then are distributed by the gas distribution plate, and gas is supplied from the second layer through the top through hole of the flow guide column.
The mixer is of a convex structure, a top air outlet is arranged at the top of the mixer, and a side air outlet is arranged at the side of the mixer.
The gas distribution plate is provided with an innermost ring through hole and an outer ring through hole, and the positions of the innermost ring through hole and the outer ring through hole are provided with annular positioning grooves.
The bottom of water conservancy diversion post is provided with the bottom through-hole that is circumference evenly distributed, and top side horizontal direction is provided with the top through-hole that is the circumference equipartition.
The baffle is a circular thin plate; which coincides with the top of the innermost product and is coaxial with the flow guide column.
Except that the bottom of the first layer is provided with a mixer connected with an air inlet of the furnace bottom, each layer of deposition space contains a flow guide column, an air distribution plate, a baffle, a large crucible backing ring and an outer heat preservation cylinder backing ring.
Compared with the prior art, the utility model has the beneficial effects that:
the deposition space in the furnace is divided into an upper layer, a lower layer, an inner layer and an outer layer by separating and positioning the gas distribution plate, and under the actual production condition, the carbon source gas and the carrier gas are mixed at the mixer and then are distributed to each gap between the workpieces to be deposited through the gas distribution plate, so that the gas flow distribution tends to be uniform; from the second layer, air is supplied to the deposition space of each layer from an air supply through hole in the horizontal direction at the top of the guide post, so as to ensure the amount of carbon source gas required by deposition; the device provided by the utility model is simple to assemble, increases the types and the number of furnace products, and improves the production quality and the production efficiency.
Drawings
FIG. 1 is a schematic view of the present invention assembled in a deposition furnace;
FIG. 2 is a schematic structural view of the flow mixer of the present invention;
FIG. 3 is a schematic structural view of the gas distribution plate of the present invention;
fig. 4 is a schematic structural view of the guide column of the present invention: a) a front cross-sectional structural schematic view; b) a top view;
fig. 5 is a schematic structural view of the baffle of the present invention.
Detailed Description
The following further describes embodiments of the present invention with reference to the drawings. It should be noted that the description of the embodiments is provided to help understanding of the present invention, but the present invention is not limited thereto. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Referring to fig. 1-5, the flow field control device of a chemical vapor deposition furnace of the present invention comprises a flow mixer 6, a gas distribution plate 7, a flow guide column 8 and a baffle 9, which are assembled in the deposition furnace, wherein the gas distribution plate 7 divides the deposition furnace into at least one layer; after being mixed at the mixer 6, the carbon source gas and the carrier gas are shunted by the gas distributing plate 7, and the gas is supplied from the second layer through the top through hole of the flow guide column 8;
the mixer 6 is positioned above a central air inlet 15 of the bottom 1 of the deposition furnace, the gas distribution plate 7 is superposed with the top of the mixer 6, four circles of through holes which are uniformly distributed in the circumference are arranged on the gas distribution plate 7, the number of the through holes 71 at the innermost circle is 8, the remaining three circles are respectively provided with 16 outer circle through holes 72, and the center is provided with the through hole; a circular positioning groove 73 is arranged at the position of each circle of through holes; different types of products are sequentially placed in the positioning groove 73 on the gas distribution plate 7 from small to large according to the size of the products, and the small crucible preform 14, the guide cylinder preform 13, the large crucible preform 12, the inner heat-preservation cylinder preform 11 and the outer heat-preservation cylinder preform 10 are sequentially arranged from inside to outside; the outer edge of the gas distribution plate 7 of the first layer is supported by the gas distribution plate backing ring 2 in a stress mode.
The side surface of the bottom of the mixer 6 is provided with 4 side air outlets 62, the air outlet 61 at the top of the mixer 6 is connected with the guide column 8, the bottom of the guide column 8 is provided with 6 bottom through holes 82 which are uniformly distributed in the circumferential direction, and the side surface of the top is provided with 4 top through holes 81 which are uniformly distributed in the circumferential direction in the horizontal direction; the top circular truncated cone of each layer of flow guide column 8 coincides with the upper layer gas distributing plate 7 and is connected with the upper layer of flow guide column 8.
The baffle 9 is in a ring shape, is superposed with the top of the innermost product small crucible prefabricated body 14 and is coaxial with the flow guide column 8; the baffle 9 is a circular thin plate, and a gap is formed between the baffle and the flow guide column 8.
Except the bottom of the first layer is provided with a flow mixer 6 connected with an air inlet of the furnace bottom 1, each layer of deposition space respectively comprises a flow guide column 8, an air distribution plate 7, a baffle 9, a large crucible backing ring 4 and an outer heat preservation cylinder backing ring 5. The carbon source gas and the carrier gas are mixed at the mixer 6 and then are distributed by the gas distribution plate 7, and the carbon source gas is supplemented to the deposition space of each layer from the second layer through the through hole at the top of the flow guide column 8.
The top of each layer of outer heat-insulating cylinder prefabricated body 10 is connected with an outer heat-insulating cylinder backing ring 5, and the outer heat-insulating cylinder backing ring 5 provides outer edge support for the flow distribution plates in the second layer and the later layers; the bottom of the large crucible preform 12 is connected with a large crucible backing ring 4, and the large crucible backing ring 4 lifts the large crucible in each level and provides support for the large crucible; the number of the product charging layers can be determined according to the actual height of the deposition furnace, but preferably, the top product is spaced from the top of the furnace by a certain distance.
The embodiments of the present invention have been described in detail with reference to the accompanying drawings, but the present invention is not limited to the described embodiments. It will be apparent to those skilled in the art that various changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the utility model, and the scope of protection is still within the scope of the utility model.

Claims (6)

1. A flow field control device of a chemical vapor deposition furnace is assembled in the deposition furnace and is characterized in that: the device comprises a mixer (6) arranged above an air inlet (15) of a furnace bottom (1) of a deposition furnace, wherein the top of the mixer (6) is connected with a guide column (8), a baffle (9) which is coaxial with the guide column and is arranged at the upper part of the guide column is arranged on the guide column (8), an air distribution plate (7) is arranged in the space at the lower part of the guide column (8) and is superposed with the top of the mixer (6), and different types of products are sequentially arranged on the air distribution plate (7) from inside to outside according to the size of the products; the deposition furnace is divided into at least one layer by the gas distribution plate (7), carbon source gas and carrier gas are mixed at the mixer (6), then are distributed by the gas distribution plate (7), and are supplied with gas from the second layer through the top through hole of the flow guide column (8).
2. The chemical vapor deposition furnace flow field control device according to claim 1, wherein: the mixer (6) is of a convex structure, a top air outlet (61) is arranged at the top of the mixer, and a side air outlet (62) is arranged at the side edge of the mixer.
3. The chemical vapor deposition furnace flow field control device according to claim 1, wherein: the gas distribution plate (7) is provided with an innermost ring through hole (71) and an outer ring through hole (72), and a circular positioning groove (73) is formed in the positions of the innermost ring through hole (71) and the outer ring through hole (72).
4. The chemical vapor deposition furnace flow field control device according to claim 1, wherein: the bottom of the flow guide column (8) is provided with bottom through holes (82) which are uniformly distributed in the circumferential direction, and the top side surface of the flow guide column is horizontally provided with top through holes (81) which are uniformly distributed in the circumferential direction.
5. The chemical vapor deposition furnace flow field control device according to claim 1, wherein: the baffle (9) is a circular thin plate; which is superposed with the top of the innermost product and is coaxial with the flow guide column (8).
6. The chemical vapor deposition furnace flow field control device according to claim 1, wherein: except that the bottom of the first layer is provided with the flow mixer (6) connected with the air inlet (15) of the furnace bottom (1), each layer of deposition space contains the flow guide column (8), the gas distribution plate (7), the baffle (9), the large crucible backing ring (4) and the outer heat preservation cylinder backing ring (5).
CN202122522748.6U 2021-10-20 2021-10-20 Chemical vapor deposition furnace flow field control device Active CN215947406U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202122522748.6U CN215947406U (en) 2021-10-20 2021-10-20 Chemical vapor deposition furnace flow field control device

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Application Number Priority Date Filing Date Title
CN202122522748.6U CN215947406U (en) 2021-10-20 2021-10-20 Chemical vapor deposition furnace flow field control device

Publications (1)

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CN215947406U true CN215947406U (en) 2022-03-04

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110699667A (en) * 2019-11-25 2020-01-17 美尔森银河新材料(烟台)有限公司 Charcoal carbon crucible apparatus for producing

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110699667A (en) * 2019-11-25 2020-01-17 美尔森银河新材料(烟台)有限公司 Charcoal carbon crucible apparatus for producing

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