CN215813162U - Semiconductor device parameter testing device - Google Patents
Semiconductor device parameter testing device Download PDFInfo
- Publication number
- CN215813162U CN215813162U CN202121568995.3U CN202121568995U CN215813162U CN 215813162 U CN215813162 U CN 215813162U CN 202121568995 U CN202121568995 U CN 202121568995U CN 215813162 U CN215813162 U CN 215813162U
- Authority
- CN
- China
- Prior art keywords
- relay
- circuit
- sampling
- coil
- conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Abstract
The utility model relates to a parameter testing device of a semiconductor device, which comprises a microcontroller, a plurality of DA conversion circuits, a power amplifying circuit, a voltage doubling circuit, a constant current circuit, a multi-path relay coil driving circuit, a first relay KA1, a second relay KA2, a third relay KA3, a fourth relay KA4, a fifth relay KA5, a current limiting resistor R1, a first sampling resistor R2, a second sampling resistor R3, a third sampling resistor R4, a first sampling circuit, a second sampling circuit, a third sampling circuit, a fourth sampling circuit and a plurality of AD conversion circuits, wherein the first sampling circuit, the second sampling circuit, the third sampling circuit, the fourth sampling circuit and the multi-path AD conversion circuits are connected in series; the utility model integrates the measuring schemes of the triode and the diode parameters into a system; different parameters can be measured by controlling the state of the corresponding relay switch by changing the on-off state of each relay coil, the measurement precision is high, and the circuit structure is shared when different parameters are measured, so that the hardware cost is saved.
Description
Technical Field
The utility model relates to the field of device parameter testing, in particular to a semiconductor device parameter testing device.
Background
The transistor and the diode are basic units of the electronic equipment, and the quality of the transistor and the diode determines the quality and reliability of the whole equipment. Therefore, the parameter test thereof plays a very important role as one of means for controlling the product quality. The traditional triode parameter test is usually realized by using a transistor characteristic graphic instrument or a multimeter, but the transistor characteristic graphic instrument is expensive, is not convenient to carry and has low accuracy, and the multimeter can only measure the direct current amplification factor of the triode and has larger error. Most of the existing schemes for measuring the parameters of the diode are complex and high in cost, a voltmeter is usually used for directly measuring the voltage of the diode in the traditional method for measuring the reverse breakdown voltage and the reverse saturation current of the diode, an ammeter is used for directly measuring the reverse saturation current of the diode, potential safety hazards exist in high-voltage live operation, and the measured data error is large. Use single system architecture to the amplification factor of triode in the patent 201320097645.2, the reverse saturation current of collecting electrode-projecting pole and saturation voltage measure, entire system is the modularized design, divide into triode base and collecting electrode voltage measuring unit, reverse breakdown voltage measuring unit, reverse saturation current measuring unit, do not measure collecting electrode and base current, the modularized design means that each unit hardware circuit is independent each other can't share, the hardware resource has been wasted, this patent can only measure the relevant parameter of triode, can not measure the relevant parameter of diode, the function is comparatively single.
SUMMERY OF THE UTILITY MODEL
The technical problem to be solved by the utility model is to provide a semiconductor device parameter testing device, which can accurately measure the relevant parameters of a triode and the relevant parameters of a diode, and combines the measurement of the triode and the diode parameters into a system, thereby saving the hardware cost.
The technical scheme for solving the technical problems is as follows: a parameter testing device for a semiconductor device comprises a microcontroller, a multi-channel DA conversion circuit, a power amplifying circuit, a voltage doubling circuit, a constant current circuit, a multi-channel relay coil driving circuit, a first relay KA1, a second relay KA2, a third relay KA3, a fourth relay KA4, a fifth relay KA5, a current limiting resistor R1, a first sampling resistor R2, a second sampling resistor R3, a third sampling resistor R4, a first sampling circuit, a second sampling circuit, a third sampling circuit, a fourth sampling circuit, a multi-channel AD conversion circuit, a first testing interface, a second testing interface and a third testing interface;
the microcontroller is respectively connected with the input end of the multi-path relay coil driving circuit, the input end of the multi-path DA conversion circuit and the output end of the multi-path AD conversion circuit through a data bus;
a coil of the first relay KA1, a coil of the second relay KA2, a coil of the third relay KA3, a coil of the fourth relay KA4 and a coil of the fifth relay KA5 are electrically connected between the output end of the multi-path relay coil driving circuit and a power supply voltage VCC, and the coil of the first relay KA1, the coil of the second relay KA2, the coil of the third relay KA3, the coil of the fourth relay KA4 and the coil of the fifth relay KA5 are connected in parallel;
the output end of the multi-path DA conversion circuit is connected with the movable end of a conversion contact of the first relay KA1 through the power amplification circuit, one static end of the conversion contact of the first relay KA1 is connected with the movable end of the conversion contact of the second relay KA2 through the voltage doubling circuit, and the other static end of the conversion contact of the first relay KA1 is connected with the movable end of the conversion contact of the second relay KA2 through a non-voltage doubling circuit; one static end of a switching contact of the second relay KA2 is connected with the movable end of the switching contact of the third relay KA3 through the current limiting resistor R1, and the other static end of the switching contact of the second relay KA2 is connected with the movable end of the switching contact of the third relay KA3 through a non-current limiting line; one dead end of a switching contact of the third relay KA3 is connected to the first test interface through the first sampling resistor R2, and the other dead end of the switching contact of the third relay KA3 is connected to the first test interface through the second sampling resistor R3;the resistance of the first sampling resistor R2 is of the order of 10-1Ohm, the resistance of the second sampling circuit R3 being of the order of 105Ohm;
the output end of the multi-path DA conversion circuit is also connected with the movable end of a conversion contact of the fourth relay KA4, one static end of the conversion contact of the fourth relay KA4 is connected with one end of a normally closed contact of the fifth relay KA5 through the constant current circuit and the third sampling resistor R4 in sequence, and the other static end of the conversion contact of the fourth relay KA4 is connected between the constant current circuit and the third sampling resistor R4 through a non-constant current circuit; the other end of the normally closed contact of the fifth relay KA5 is connected to the second test interface; the third test interface is grounded;
one sampling end of the first sampling circuit is connected to the movable end of the conversion contact of the third relay KA3, the other sampling end of the first sampling circuit is connected to the first test interface, and the output end of the first sampling circuit is connected to the input end of the multi-path AD conversion circuit;
one sampling end of the second sampling circuit is connected to one end of the third sampling resistor R4, the other sampling end of the second sampling circuit is connected to the other end of the third sampling resistor R4, and the output end of the second sampling circuit is connected to the input end of the multi-way AD conversion circuit;
one sampling end of the third sampling circuit is connected to the second test interface, the other sampling end of the third sampling circuit is connected to the third test interface, and the output end of the third sampling circuit is connected to the input end of the multi-path AD conversion circuit;
one sampling end of the fourth sampling circuit is connected to the first test interface, the other sampling end of the fourth sampling circuit is connected to the third test interface, and the output end of the fourth sampling circuit is connected to the input end of the multi-path AD conversion circuit.
On the basis of the technical scheme, the utility model can be further improved as follows.
Furthermore, the semiconductor device parameter testing device is used for measuring the parameters of the diode to be tested or the triode to be tested; the first test interface is used for accessing a collector electrode of the triode to be tested or an anode of the diode to be tested, the second test interface is used for accessing a base electrode of the triode to be tested, and the third test interface is used for accessing an emitting electrode of the triode to be tested or a cathode of the diode to be tested.
Further, the device also comprises a serial port, and the serial port is connected with the microcontroller.
Further, still include the display screen, the display screen with microcontroller is connected.
Further, the device also comprises a key, and the key is connected with the microcontroller.
Further, the multi-channel DA conversion circuit is specifically a multi-channel DA conversion circuit with bipolar output.
Further, multi-way relay coil drive circuit includes displacement register and 5 transistors, displacement register's model is 74HC595, displacement register's data input end is connected on microprocessor's the IO interface, displacement register's 5 parallel data output ends of position are respectively through 5 the transistor correspond with first relay KA 1's coil second relay KA 2's coil third relay KA 3's coil fourth relay KA 4's coil and fifth relay KA 5's coil is connected.
Further, the transistor is specifically an NPN-type triode.
Further, the first relay KA1, the second relay KA2, the third relay KA3, the fourth relay KA4 and the fifth relay KA5 are 5V relays.
Further, the resistance of the third sampling resistor R4 is in the order of 10-1Ohm.
The utility model has the beneficial effects that: the parameter testing device of the semiconductor device integrates the triode and the diode parameter measuring scheme into a system, and can carry out triode input characteristic measurement, triode output characteristic measurement, triode direct current amplification factor measurement, triode collector-emitter reverse breakdown voltage measurement, triode collector-emitter reverse saturation current measurement, diode forward volt-ampere characteristic measurement, diode reverse breakdown voltage measurement and diode reverse current measurement; different parameters can be measured by controlling the state of the corresponding relay switch by changing the on-off state of each relay coil, the measurement precision is high, and the circuit structure is shared when different parameters are measured, so that the hardware cost is saved.
Drawings
FIG. 1 is a schematic circuit diagram of a semiconductor device parameter testing apparatus according to the present invention;
FIG. 2 is a schematic diagram of a circuit configuration of an NPN type triode driven relay coil;
FIG. 3 is a schematic diagram of a circuit for measuring input characteristics of a transistor to be measured;
FIG. 4 is a schematic diagram of a circuit for measuring output characteristics of a transistor to be measured;
FIG. 5 is a graph showing the output characteristics of the transistor under test;
FIG. 6 shows the collector-emitter reverse breakdown voltage U of the triode to be testedCEOThe schematic diagram of the measuring circuit structure of (1);
FIG. 7 is a schematic diagram of a test circuit structure of a current-voltage characteristic curve of a diode to be tested;
FIG. 8 is a schematic diagram of a circuit for measuring reverse breakdown voltage of a diode under test;
fig. 9 is a schematic diagram of a test circuit for reverse saturation current of a diode under test.
Detailed Description
The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the utility model.
As shown in figure 1, the parameter testing device for the semiconductor device comprises a microcontroller, a multi-channel DA conversion circuit, a power amplification circuit, a voltage doubling circuit, a constant current circuit, a multi-channel relay coil driving circuit, a first relay KA1, a second relay KA2 and a third relayKA3, a fourth relay KA4, a fifth relay KA5, a current limiting resistor R1, a first sampling resistor R2, a second sampling resistor R3, a third sampling resistor R4, a first sampling circuit, a second sampling circuit, a third sampling circuit, a fourth sampling circuit, a multi-channel AD conversion circuit, a first test interface, a second test interface and a third test interface; the microcontroller is respectively connected with the input end of the multi-path relay coil driving circuit, the input end of the multi-path DA conversion circuit and the output end of the multi-path AD conversion circuit through a data bus; a coil of the first relay KA1, a coil of the second relay KA2, a coil of the third relay KA3, a coil of the fourth relay KA4 and a coil of the fifth relay KA5 are electrically connected between the output end of the multi-path relay coil driving circuit and a power supply voltage VCC, and the coil of the first relay KA1, the coil of the second relay KA2, the coil of the third relay KA3, the coil of the fourth relay KA4 and the coil of the fifth relay KA5 are connected in parallel; the output end of the multi-path DA conversion circuit is connected with the movable end of a conversion contact of the first relay KA1 through the power amplification circuit, one static end of the conversion contact of the first relay KA1 is connected with the movable end of the conversion contact of the second relay KA2 through the voltage doubling circuit, and the other static end of the conversion contact of the first relay KA1 is connected with the movable end of the conversion contact of the second relay KA2 through a non-voltage doubling circuit; one static end of a switching contact of the second relay KA2 is connected with the movable end of the switching contact of the third relay KA3 through the current limiting resistor R1, and the other static end of the switching contact of the second relay KA2 is connected with the movable end of the switching contact of the third relay KA3 through a non-current limiting line; one dead end of a switching contact of the third relay KA3 is connected to the first test interface through the first sampling resistor R2, and the other dead end of the switching contact of the third relay KA3 is connected to the first test interface through the second sampling resistor R3; the resistance of the first sampling resistor R2 is of the order of 10-1Ohm, the resistance of the second sampling circuit R3 being of the order of 105Ohm; said pluralityThe output end of the path DA conversion circuit is also connected with the movable end of a conversion contact of the fourth relay KA4, one static end of the conversion contact of the fourth relay KA4 is connected with one end of a normally closed contact of the fifth relay KA5 through the constant current circuit and the third sampling resistor R4 in sequence, and the other static end of the conversion contact of the fourth relay KA4 is connected between the constant current circuit and the third sampling resistor R4 through a non-constant current circuit; the other end of the normally closed contact of the fifth relay KA5 is connected to the second test interface; the third test interface is grounded; one sampling end of the first sampling circuit is connected to the movable end of the conversion contact of the third relay KA3, the other sampling end of the first sampling circuit is connected to the first test interface, and the output end of the first sampling circuit is connected to the input end of the multi-path AD conversion circuit; one sampling end of the second sampling circuit is connected to one end of the third sampling resistor R4, the other sampling end of the second sampling circuit is connected to the other end of the third sampling resistor R4, and the output end of the second sampling circuit is connected to the input end of the multi-way AD conversion circuit; one sampling end of the third sampling circuit is connected to the second test interface, the other sampling end of the third sampling circuit is connected to the third test interface, and the output end of the third sampling circuit is connected to the input end of the multi-path AD conversion circuit; one sampling end of the fourth sampling circuit is connected to the first test interface, the other sampling end of the fourth sampling circuit is connected to the third test interface, and the output end of the fourth sampling circuit is connected to the input end of the multi-path AD conversion circuit.
In this particular embodiment:
the semiconductor device parameter testing device is used for measuring the parameters of a diode to be tested or a triode to be tested; the first test interface is used for accessing a collector electrode of the triode to be tested or an anode of the diode to be tested, the second test interface is used for accessing a base electrode of the triode to be tested, and the third test interface is used for accessing an emitting electrode of the triode to be tested or a cathode of the diode to be tested.
The utility model also comprises a serial port which is connected with the microcontroller. The related parameters obtained by measurement can be transmitted to the upper computer through the serial port, and convenience is provided for subsequent data analysis.
The utility model also comprises a display screen which is connected with the microcontroller. The display screen can display information such as a current device to be tested, a triode tube type, a current parameter to be tested, a current sampling value and the like, so that a user can master the operation condition of the current device conveniently.
The utility model also comprises a key, wherein the key is connected with the microcontroller. The current function of the device can be controlled through the keys, the type of a tested device and the tested parameters can be selected, and the microcontroller controls the on-off of a relevant relay coil matched with the requirements of a user through reading input data of the keys, so that the system enters different test states. The keys may include a mode adjustment key (through which the system is controlled to operate in a manual mode or an automatic mode), an add/subtract key (through which the increase/decrease of the magnitude of a variable (voltage or current) may be controlled in the manual mode), a device selection key (through which a measurement device is selected to be a diode or a triode), and a parameter selection key (through which a parameter to be measured may be selected in the manual mode).
The multi-channel DA conversion circuit is specifically a multi-channel DA conversion circuit with bipolar output. Because the triode has NPN polarity and PNP polarity, the polarity of the voltage needed when the input and output characteristics of the two triodes are measured is opposite, therefore, the multi-channel DA conversion circuit adopts a multi-channel DA conversion circuit with bipolar output.
The multi-way relay coil drive circuit comprises a displacement register and 5 transistors, the model of the displacement register is 74HC595, the data input end of the displacement register is connected on the IO interface of the microprocessor, the 5-bit parallel data output end of the displacement register is respectively through 5 the transistors correspond to the coil of the first relay KA1, the coil of the second relay KA2, the coil of the third relay KA3, the coil of the fourth relay KA4 and the coil of the fifth relay KA5 are connected. In particular, the transistor is embodied asAn NPN type triode; the first relay KA1, the second relay KA2, the third relay KA3, the fourth relay KA4 and the fifth relay KA5 are 5V relays. The IO port of the microcontroller is connected to a shift register of 74HC59 type to control a multiplex relay coil, which is driven by an NPN transistor. The circuit structure of the NPN type triode driven relay coil is shown in fig. 2. The transistor is used to drive the relay, and the emitter of the transistor must be grounded. When the base electrode of the NPN type triode T is input with high level, the NPN type triode T is in saturated conduction, the collector electrode is changed into low level, therefore, the coil of the relay KA is electrified, and the contact is attracted. When the base electrode of the NPN type triode T is input with low level, the NPN type triode T is cut off, the coil of the relay KA is powered off, and the contact is disconnected. NPN type triode T can be regarded as a control switch, and V is generally selectedCBO≈VCEOThe amplification factor beta is generally selected to be 120-240. The resistor R11 mainly plays a role in limiting current, reduces the power consumption of the NPN type triode T, and has the resistance value of 2K omega. The resistor R12 reliably stops the NPN transistor T, and the resistance is 5.1K Ω. The diode D freewheels in the reverse direction to suppress the surge, and generally 1N4148 is selected.
The third sampling resistor R4 has a resistance value of the order of 10-1Ohm. First sampling resistor R2 inserts when measuring triode output characteristic, triode input characteristic, diode forward volt-ampere characteristic, and third sampling resistor R4 inserts when measuring triode output characteristic, triode input characteristic, and first sampling resistor R2 and third sampling resistor R4 size are about 0.1 ohm, avoid it to excessively divide the voltage and lead to the power inefficiency. The second sampling resistor R3 is connected when measuring the reverse breakdown voltage of the collector-emitter of the triode, the reverse saturation current of the collector-emitter of the triode, the reverse breakdown voltage of the diode and the reverse saturation current of the diode, and the magnitude is about 100 kilo-ohms, and because the magnitude of the reverse current is microampere level, if the resistance value of the third sampling resistor R3 is too small, the error of the voltage sampling value at two ends of the third sampling resistor is increased.
In the utility model, the switching contact state of the first relay KA1 determines whether to access a voltage doubling circuit, the switching contact state of the second relay KA2 determines whether to access a current limiting resistor R1, the switching contact state of the third relay KA3 determines to access the first sampling resistor R2 or the second sampling resistor R3, the switching contact state of the fourth relay KA4 determines whether to access a constant current circuit, and the normally closed contact state of the fifth relay KA5 determines to connect a branch circuit connected to the second test interface.
In the utility model, the first sampling circuit is used for acquiring the voltage U at two ends of the first sampling resistor R2R2Or the voltage U across the second sampling resistor R3R3(ii) a The second sampling circuit is used for acquiring the voltage U at two ends of the third sampling resistor R4R4(ii) a The third sampling circuit is used for collecting the base electrode-emitter electrode voltage U of the triode to be testedBE(ii) a The fourth sampling circuit is used for collecting the collector-emitter voltage U of the triode to be testedCEOr the cathode-anode voltage of the diode under test. The first sampling circuit, the second sampling circuit, the third sampling circuit and the fourth sampling circuit can adopt devices for measuring voltage.
The following explains the working principle of the present invention specifically:
the utility model provides a parameter testing device for a semiconductor device, which provides parameter testing functions of two devices, namely a triode and a diode. After the system initialization is finished, after a user selects a device type matched with the tested device through a key, the microcontroller controls to measure related parameters of the device.
The multifunctional device parameter tester provides two working modes, namely an automatic mode and a manual mode. When the device works automatically, the microcontroller completes measurement work of various parameters of the device according to a certain sequence; when the device works manually, the microcontroller controls and completes the measurement work of one or more parameters specific to the user according to the signals input by the user through the keys. The systems work independently in different modes.
The semiconductor device parameter testing device is powered on, after the system initialization is completed, a user selects a tested device to be a triode or a diode through a key, and after the device type selection is completed, a measurement mode is selected to be an automatic mode or a manual mode. In an automatic mode, the microcontroller measures related parameters of corresponding devices according to a certain sequence; in the manual mode, a user can make a specific parameter or parameters of the device through the key control system, and can increase or decrease the value of the key control variable (input voltage or input current) within a set range. The display screen displays the device type, the parameter name and the sampling value in real time.
It should be noted that, the control function of the microcontroller in the present invention is the inherent function of the microcontroller, for example, the microcontroller may select 51 singlechips, and the present invention does not relate to the improvement of the computer software.
(1) When measuring the tube type of the triode to be measured, connecting the collector of the triode to be measured on the first test interface, connecting the base of the triode to be measured on the second test interface, and connecting the emitter of the triode to be measured on the third test interface; microcontroller passes through the drive of multi-way relay coil drive circuit first relay KA1 the coil of second relay KA2 the coil of third relay KA3 the coil of fourth relay KA4 and the coil of fifth relay KA5 circular telegram or not circular telegram makes first relay KA 1's changeover contact connect to non-voltage doubling circuit, makes second relay KA 2's changeover contact connect to non-current-limiting circuit, makes third relay KA 3's changeover contact connect to first sampling resistance R2, makes fourth relay KA 4's changeover contact connect to non-constant current circuit, makes fifth relay KA 5's normally closed contact closed.
The microcontroller firstly outputs forward voltage through the multi-path DA conversion circuit, outputs voltage to a branch circuit connected to a collector terminal of the triode to be tested after being amplified by the power amplification circuit, and simultaneously outputs voltage U at two ends of a first sampling resistor R2 through a first sampling circuitR2Sampling, and obtaining the current flowing through the collector of the triode to be tested as I according to ohm's lawc＝UR3/R3. If IcIf not, the result shows that the unbalanced minority carriers of the base region cross the collector junction to reach the collector region under the action of the external electric field to form drift current IcAnd otherwise, the transistor to be detected is of a PNP type. The first sampling circuit transmits data to the data bus via the multi-path AD conversion circuitAnd the microcontroller receives and processes the tube types and displays the detected tube types through the display screen. The device can control the polarity of the output voltage in subsequent measurement according to the detected tube type.
(2) When measuring the input characteristics of the triode to be tested, connecting the collector of the triode to be tested on the first test interface, connecting the base of the triode to be tested on the second test interface, and connecting the emitter of the triode to be tested on the third test interface; the microcontroller drives the coil of the first relay KA1, the coil of the second relay KA2, the coil of the third relay KA3, the coil of the fourth relay KA4 and the coil of the fifth relay KA5 to be electrified or not through a multi-way relay coil driving circuit, so that the switching contact of the first relay KA1 is connected to a non-voltage-multiplying line, the switching contact of the second relay KA2 is connected to a non-current-limiting line, the switching contact of the third relay KA3 is connected to a first sampling resistor R2, the switching contact of the fourth relay KA4 is connected to a non-constant current line, and the normally closed contact of the fifth relay KA5 is closed; fig. 3 shows a circuit for measuring the input characteristics of the transistor to be measured.
The microcontroller controls the multi-path DA conversion circuit to output voltage to the branch circuit connected to the collector of the triode to be measured through the data bus, the voltage is amplified by the power amplification circuit, and the voltage U applied to the collector and the emitter of the triode to be measured is enabled during the first measurementCEIs 0v (voltage U of collector and emitter of triode to be tested)CESampled by the fourth sampling circuit), hold UCEThe microcontroller controls the multi-path DA conversion circuit to output voltage to a branch circuit connected to the base electrode of the triode to be tested through the data bus without changing, and gradually increases the voltage U between the base electrode and the emitter electrode of the triode to be testedBEWhile simultaneously passing through the third sampling circuit pair UBESampling the voltage U across the third sampling resistor R4 by the second sampling circuitR4Sampling is carried out, and from ohm's law, I can be obtainedB＝UR4/R4The second sampling circuit, the third sampling circuit and the fourth sampling circuit convert the sampled data through the multi-path AD conversion circuit and send the converted sampled data to the data bus, and the sampled data is received and processed by the microcontroller and then displays U in real time through the display screenBEAnd IBAnd (4) completing the first group of data measurement. After the first group of data is measured, the microcontroller controls the multi-path DA conversion circuit to output voltage to the branch circuit connected to the collector of the triode to be measured through the data bus, and the voltage is amplified by the power amplification circuit, so that the voltage U applied to the collector and emitter of the triode to be measuredCEAt 0.5V, control UCEThe U is not changed and gradually increasedBERepeating the above pair of UBEAnd IBThe second set of data measurements is completed. After the second group of data is measured, the microcontroller controls the multi-path DA conversion circuit to output voltage to the branch circuit connected to the collector electrode of the triode to be measured through the data bus, and the voltage is amplified by the power amplification circuit, so that the voltage U applied to the collector electrode and the emitter electrode of the triode to be measuredCEIs 1V, control UCEThe U is not changed and gradually increasedBERepeating the above pair of UBEAnd IBThe third set of data measurements is completed. Obtaining U after the measurement of the three groups of data is finishedCEU is equal to 0v, 0.5v, 1v respectivelyBEAnd IBThe data can be sent to an upper computer through a serial port, and 3 input characteristic curves can be generated by conveniently processing the data subsequently. For low power transistors, U may be usedCEApproximate U of any input characteristic curve when more than or equal to 1VCEAll input characteristic curves of 1V or more.
(3) When measuring the output characteristics of the triode to be tested, connecting the collector of the triode to be tested on the first test interface, connecting the base of the triode to be tested on the second test interface, and connecting the emitter of the triode to be tested on the third test interface; the microcontroller drives the coil of the first relay KA1, the coil of the second relay KA2, the coil of the third relay KA3, the coil of the fourth relay KA4 and the coil of the fifth relay KA5 to be electrified or not electrified, so that the conversion contact of the first relay KA1 is connected to a non-voltage-multiplying line, the conversion contact of the second relay KA2 is connected to a non-current-limiting line, the conversion contact of the third relay KA3 is connected to the first sampling resistor R2, the conversion contact of the fourth relay KA4 is connected to a constant current circuit, and the normally closed contact of the fifth relay KA5 is closed; fig. 4 shows a circuit for measuring the output characteristics of the transistor to be measured.
The microcontroller controls the multi-path DA conversion circuit through a data bus to output current to a branch circuit connected to the base electrode of the triode to be tested through a controllable constant current circuit; when measuring the first group of data, the current I flowing through the base of the triode to be measuredBIs 0 μ A, hold IBThe microcontroller controls the multi-path DA conversion circuit to output voltage to the branch circuit connected to the collector electrode of the triode to be tested through the data bus, and gradually increases the voltage U between the collector electrode and the emitter electrode of the triode to be testedCEWhile the fourth sampling circuit is used for sampling UCESampling is carried out, and a first sampling resistor R is sampled through a first sampling circuit2Voltage U acrossR2Sampling is carried out, and from ohm's law, I can be obtainedc＝UR2/R2The first sampling circuit and the fourth sampling circuit convert the sampled data through the multi-path AD conversion circuit and send the converted sampled data to the data bus, and the sampled data is received and processed by the microcontroller and then displays U in real time through the display screenCEAnd ICAnd (4) completing the first group of data measurement. After the first group of data is measured, the microcontroller controls the multi-path DA circuit through the data bus and outputs current to a branch circuit connected to the base electrode of the triode to be measured through the controllable constant current circuit, so that the current I flowing through the base electrode of the triode to be measuredBRespectively 100 muA, 200 muA, 300 muA and 400 muA, and the first data sampling operation is repeated in sequence. After the five groups of data measurement operations are completed, I can be obtainedBU at 0. mu.A, 100. mu.A, 200. mu.A, 300. mu.A, 400. mu.A, respectivelyCEAnd ICThe data are sent to the upper computer through the serial port, the data are conveniently processed subsequently to generate 5 output characteristic curves, and the output characteristic curve of the triode to be tested is shown in figure 5.
(4) The direct current amplification factor beta, beta is approximately equal to I of the triode to be detected can be obtained according to the output characteristic curve of the triode to be detectedC/IBThe value of beta is kept constant in the amplification region, and on the output characteristic curve, I is obtained by drawing a straight line perpendicular to the X axis and taking the intersection of the straight line and the output characteristic curveC/IBAs shown in fig. 5, the intersections of the straight line and the output characteristic curve are a, b, c, and d, respectively.
(5) Measuring reverse breakdown voltage U between collector and emitter of triode to be measuredCEOWhen the test interface is used, the collector of the triode to be tested is connected to the first test interface, the base of the triode to be tested is connected to the second test interface, and the emitter of the triode to be tested is connected to the third test interface; the microcontroller drives the coil of the first relay KA1, the coil of the second relay KA2, the coil of the third relay KA3, the coil of the fourth relay KA4 and the coil of the fifth relay KA5 to be electrified or not through a multi-way relay coil driving circuit, so that the conversion contact of the first relay KA1 is connected to a voltage doubling circuit, the conversion contact of the second relay KA2 is connected to a non-current-limiting circuit, the conversion contact of the third relay KA3 is connected to the second sampling resistor R3, and the normally closed contact of the fifth relay KA5 is disconnected (the base of a triode to be tested is opened); reverse breakdown voltage U between collector and emitter of triode to be testedCEOThe measurement circuit of (2) is shown in fig. 6.
The microcontroller controls the multi-path DA conversion circuit to output voltage to a branch circuit connected to a collector electrode of the triode to be tested through the data bus, the voltage is amplified through the power amplification circuit and the voltage doubling circuit to obtain 0-100V adjustable voltage, the microcontroller controls the output voltage to gradually rise through the data bus, and meanwhile, the first sampling circuit controls the voltage U at the two ends of the second sampling resistor R3R3The sampling is carried out, and because the current in the circuit is extremely small (microampere level) before breakdown, the second sampling resistor R3 is a sampling resistor of 100 kilohm level, so that the voltage at two ends of the sampling resistor can be conveniently sampled, and the error is reduced; the fourth sampling circuit is used for measuring the voltage U at the two ends of the collector and the emitter of the triode to be measuredCESampling is performed. From ohm's law, one obtains IC＝UR3/R3The first sampling circuit and the fourth sampling circuit convert the sampled data through the multi-path AD conversion circuit and send the converted sampled data to the data bus, and the sampled data is received and processed by the microcontroller and then displays U in real time through the display screenCEAnd ICAnd the value is transmitted to an upper computer through a serial port for storage. When the current I flows through the collector of the triode to be testedCWhen the value is mutated, U is presentCEThe value of (D) is the reverse breakdown voltage U between the collector and the emitter of the triode to be tested(BR)CEO. The output current of the voltage doubling circuit is extremely small, and the circuit cannot be damaged or dangerous even if misoperation occurs under the high-voltage condition.
(6) When measuring the collector-emitter reverse saturation current of the triode to be measured, the on-off state of each relay is the same as that when measuring the collector-emitter reverse breakdown voltage of the triode to be measured, as shown in fig. 6.
The microcontroller controls the multi-path DA conversion circuit to output voltage to a branch circuit connected to the collector of the triode to be tested through the data bus, the voltage is amplified through the power amplification circuit and the voltage doubling circuit to obtain adjustable voltage of 0-100V, the microcontroller controls the output voltage to gradually rise through the data bus, and the voltage at two ends of the collector and the emitter of the triode to be tested is smaller than the reverse breakdown voltage U between the collector and the emitter(BR)CEOOne half of (a). At the same time, the first sampling circuit samples the voltage U across the second sampling resistor R3R3The sampling is carried out, and because the reverse saturation current is extremely small (microampere level), R3 is a sampling resistor of 100 kilo-ohm level, the voltage at two ends of the sampling resistor is convenient to sample, and the error is reduced. From ohm's law, one obtains IC＝UR3/R3The first sampling circuit converts the sampled data by the multi-path AD conversion circuit and then sends the converted sampled data to the data bus, and the sampled data is received and processed by the microcontroller and then is displayed by the display screen in real timeCAnd transmitting the data to an upper computer for storage through a serial port.
(7) When the volt-ampere characteristic curve of the diode to be tested is measured, connecting the anode of the diode to be tested on the first test interface, and connecting the cathode of the diode to be tested on the third test interface; the microcontroller drives the coil of the first relay KA1, the coil of the second relay KA2, the coil of the third relay KA3, the coil of the fourth relay KA4 and the coil of the fifth relay KA5 to be electrified or not electrified, so that the switching contact of the first relay KA1 is connected to a non-voltage-multiplying line, the switching contact of the second relay KA2 is connected to a current-limiting resistor R1, the switching contact of the third relay KA3 is connected to a first sampling resistor R2, and the normally closed contact of the fifth relay KA5 is disconnected; a test circuit for the current-voltage characteristic of the diode under test is shown in fig. 7.
The microcontroller controls the multi-path DA conversion circuit to amplify the voltage by the power amplification circuit and then output the voltage to the branch circuit connected to the anode of the diode to be tested, and controls the output voltage UinGradually increasing, sampling the voltage at two ends of the first sampling resistor R2 by the first sampling circuit, sampling the voltage U at two ends of the anode and the cathode of the diode to be tested by the fourth sampling circuit, and obtaining the voltage from ohm's law, where I is UR2/R2The current I flowing through the diode to be tested can be obtained, the sampling data are transmitted to the data bus after being converted by the multi-path AD conversion circuit through the first sampling circuit and the fourth sampling circuit, the U value and the I value are displayed in real time through the display screen after being received and processed by the microcontroller, the U value and the I value are transmitted to the upper computer through the serial port, and the forward volt-ampere characteristic curve of the diode to be tested is generated after the data are processed by the upper computer. When I increases exponentially from zero with the increase of the voltage U, the value of U is the starting voltage U of the diode to be testedon。
(8) When the reverse breakdown voltage of the diode to be tested is measured, connecting the anode of the diode to be tested on the first test interface, and connecting the cathode of the diode to be tested on the third test interface; the microcontroller drives the coil of the first relay KA1, the coil of the second relay KA2, the coil of the third relay KA3, the coil of the fourth relay KA4 and the coil of the fifth relay KA5 to be electrified or not through a multi-way relay coil driving circuit, so that the conversion contact of the first relay KA1 is connected to a voltage doubling circuit, the conversion contact of the second relay KA2 is connected to a non-current-limiting line, the conversion contact of the third relay KA3 is connected to a second sampling resistor R3, and the normally closed contact of the fifth relay KA5 is disconnected; a circuit for measuring the reverse breakdown voltage of the diode under test is shown in fig. 8.
The microcontroller controls the multi-path DA conversion circuit to output reverse voltage to two ends of the diode to be tested through the data bus, the voltage is amplified through the power amplification circuit and the voltage doubling circuit, the microcontroller controls the output voltage to gradually rise through the data bus, and meanwhile, the first sampling circuit controls the voltage U at two ends of the second sampling resistor R3R3Sampling was performed sinceThe current in the circuit before breakdown is extremely small (microampere level), so that the second sampling resistor R3 is a sampling resistor of 100 kilohm level, the voltage at two ends of the second sampling resistor R3 can be conveniently sampled, and the error is reduced; and the fourth sampling circuit samples the voltage U at the two ends of the anode and the cathode of the diode to be tested. From ohm's law, I ═ U can be obtainedR3/R3The first sampling circuit and the fourth sampling circuit convert the sampled data through the multi-path AD conversion circuit and send the converted sampled data to the data bus, and the sampled data is received and processed by the microcontroller and then displays U in real time through the display screenCEAnd ICAnd the value is transmitted to an upper computer through a serial port for storage. When the current flowing through the diode to be tested is suddenly changed, the diode to be tested is shown to be broken down, and the value of the voltage U at the two ends of the diode to be tested is the reverse breakdown voltage of the diode to be tested.
(9) When the system measures the reverse saturation current of the diode to be tested, connecting the anode of the diode to be tested on the first test interface, and connecting the cathode of the diode to be tested on the third test interface; the microcontroller drives the coil of the first relay KA1, the coil of the second relay KA2, the coil of the third relay KA3, the coil of the fourth relay KA4 and the coil of the fifth relay KA5 to be electrified or not through a multi-way relay coil driving circuit, so that the switching contact of the first relay KA1 is connected to a non-voltage-multiplying line, the switching contact of the second relay KA2 is connected to a non-current-limiting line, the switching contact of the third relay KA3 is connected to the second sampling resistor R3, and the normally closed contact of the fifth relay KA5 is disconnected; because the reverse saturation current value is very small (microampere level), the second sampling resistor R3 with larger size is connected, so that the voltage at two ends of the second sampling resistor R3 can be conveniently sampled, and the error is reduced; the test circuit for the reverse saturation current of the diode under test is shown in fig. 9.
The microcontroller controls the multi-path DA conversion circuit to output reverse voltage to two ends of the diode to be detected through the data bus, the voltage is amplified through the power amplification circuit, and the microcontroller controls the output voltage to gradually rise. At this time, the first sampling circuit samples the voltage U across the second sampling resistor R3R3Sampling is carried out, and simultaneously the fourth sampling circuit samples the voltage U at the two ends of the diode to be tested, and the sampling is carried out according to ohm's lawReverse current I ═ U through the diode under testR3/R3The first sampling circuit and the fourth sampling circuit convert the sampled data through the multi-path AD conversion circuit and transmit the converted sampled data to the data bus, the microcontroller receives and processes the data and displays the values of U and I in real time through the display screen, and the data are sent to the upper computer through the serial port to be stored.
The parameter testing device of the semiconductor device integrates the triode and the diode parameter measuring scheme into a system, and can carry out triode input characteristic measurement, triode output characteristic measurement, triode direct current amplification factor measurement, triode collector-emitter reverse breakdown voltage measurement, triode collector-emitter reverse saturation current measurement, diode forward volt-ampere characteristic measurement, diode reverse breakdown voltage measurement and diode reverse current measurement; different parameters can be measured by controlling the state of the corresponding relay switch by changing the on-off state of each relay coil, the measurement precision is high, and the circuit structure is shared when different parameters are measured, so that the hardware cost is saved.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the utility model, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. A semiconductor device parameter testing device is characterized in that: the device comprises a microcontroller, a multi-channel DA conversion circuit, a power amplification circuit, a voltage doubling circuit, a constant current circuit, a multi-channel relay coil driving circuit, a first relay KA1, a second relay KA2, a third relay KA3, a fourth relay KA4, a fifth relay KA5, a current limiting resistor R1, a first sampling resistor R2, a second sampling resistor R3, a third sampling resistor R4, a first sampling circuit, a second sampling circuit, a third sampling circuit, a fourth sampling circuit, a multi-channel AD conversion circuit, a first test interface, a second test interface and a third test interface;
the microcontroller is respectively connected with the input end of the multi-path relay coil driving circuit, the input end of the multi-path DA conversion circuit and the output end of the multi-path AD conversion circuit through a data bus;
a coil of the first relay KA1, a coil of the second relay KA2, a coil of the third relay KA3, a coil of the fourth relay KA4 and a coil of the fifth relay KA5 are electrically connected between the output end of the multi-path relay coil driving circuit and a power supply voltage VCC, and the coil of the first relay KA1, the coil of the second relay KA2, the coil of the third relay KA3, the coil of the fourth relay KA4 and the coil of the fifth relay KA5 are connected in parallel;
the output end of the multi-path DA conversion circuit is connected with the movable end of a conversion contact of the first relay KA1 through the power amplification circuit, one static end of the conversion contact of the first relay KA1 is connected with the movable end of the conversion contact of the second relay KA2 through the voltage doubling circuit, and the other static end of the conversion contact of the first relay KA1 is connected with the movable end of the conversion contact of the second relay KA2 through a non-voltage doubling circuit; one static end of a switching contact of the second relay KA2 is connected with the movable end of the switching contact of the third relay KA3 through the current limiting resistor R1, and the other static end of the switching contact of the second relay KA2 is connected with the movable end of the switching contact of the third relay KA3 through a non-current limiting line; one dead end of a switching contact of the third relay KA3 is connected to the first test interface through the first sampling resistor R2, and the other dead end of the switching contact of the third relay KA3 is connected to the first test interface through the second sampling resistor R3; the resistance of the first sampling resistor R2 is of the order of 10-1Ohm, the resistance of the second sampling circuit R3 being of the order of 105Ohm;
the output end of the multi-path DA conversion circuit is also connected with the movable end of a conversion contact of the fourth relay KA4, one static end of the conversion contact of the fourth relay KA4 is connected with one end of a normally closed contact of the fifth relay KA5 through the constant current circuit and the third sampling resistor R4 in sequence, and the other static end of the conversion contact of the fourth relay KA4 is connected between the constant current circuit and the third sampling resistor R4 through a non-constant current circuit; the other end of the normally closed contact of the fifth relay KA5 is connected to the second test interface; the third test interface is grounded;
one sampling end of the first sampling circuit is connected to the movable end of the conversion contact of the third relay KA3, the other sampling end of the first sampling circuit is connected to the first test interface, and the output end of the first sampling circuit is connected to the input end of the multi-path AD conversion circuit;
one sampling end of the second sampling circuit is connected to one end of the third sampling resistor R4, the other sampling end of the second sampling circuit is connected to the other end of the third sampling resistor R4, and the output end of the second sampling circuit is connected to the input end of the multi-way AD conversion circuit;
one sampling end of the third sampling circuit is connected to the second test interface, the other sampling end of the third sampling circuit is connected to the third test interface, and the output end of the third sampling circuit is connected to the input end of the multi-path AD conversion circuit;
one sampling end of the fourth sampling circuit is connected to the first test interface, the other sampling end of the fourth sampling circuit is connected to the third test interface, and the output end of the fourth sampling circuit is connected to the input end of the multi-path AD conversion circuit.
2. The semiconductor device parameter testing apparatus according to claim 1, wherein: the semiconductor device parameter testing device is used for measuring the parameters of a diode to be tested or a triode to be tested; the first test interface is used for accessing a collector electrode of the triode to be tested or an anode of the diode to be tested, the second test interface is used for accessing a base electrode of the triode to be tested, and the third test interface is used for accessing an emitting electrode of the triode to be tested or a cathode of the diode to be tested.
3. The semiconductor device parameter testing apparatus according to claim 1, wherein: the device also comprises a serial port, and the serial port is connected with the microcontroller.
4. The semiconductor device parameter testing apparatus according to claim 1, wherein: the display screen is connected with the microcontroller.
5. The semiconductor device parameter testing apparatus according to claim 1, wherein: the device also comprises a key, wherein the key is connected with the microcontroller.
6. The semiconductor device parameter testing apparatus according to any one of claims 1 to 5, characterized in that: the multi-channel DA conversion circuit is specifically a multi-channel DA conversion circuit with bipolar output.
7. The semiconductor device parameter testing apparatus according to any one of claims 1 to 5, characterized in that: the multi-way relay coil drive circuit comprises a displacement register and 5 transistors, the model of the displacement register is 74HC595, the data input end of the displacement register is connected on the IO interface of the microprocessor, the 5-bit parallel data output end of the displacement register is respectively through 5 the transistors correspond to the coil of the first relay KA1, the coil of the second relay KA2, the coil of the third relay KA3, the coil of the fourth relay KA4 and the coil of the fifth relay KA5 are connected.
8. The semiconductor device parameter testing apparatus according to claim 7, wherein: the transistor is specifically an NPN type triode.
9. The semiconductor device parameter testing apparatus according to any one of claims 1 to 5, characterized in that: the first relay KA1, the second relay KA2, the third relay KA3, the fourth relay KA4 and the fifth relay KA5 are 5V relays.
10. The semiconductor device parameter testing apparatus according to any one of claims 1 to 5, characterized in that: the third sampling resistor R4 has a resistance value of the order of 10-1Ohm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121568995.3U CN215813162U (en) | 2021-07-09 | 2021-07-09 | Semiconductor device parameter testing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121568995.3U CN215813162U (en) | 2021-07-09 | 2021-07-09 | Semiconductor device parameter testing device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215813162U true CN215813162U (en) | 2022-02-11 |
Family
ID=80181341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202121568995.3U Active CN215813162U (en) | 2021-07-09 | 2021-07-09 | Semiconductor device parameter testing device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN215813162U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113504447A (en) * | 2021-07-09 | 2021-10-15 | 武汉工程大学 | Semiconductor device parameter testing device |
-
2021
- 2021-07-09 CN CN202121568995.3U patent/CN215813162U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113504447A (en) * | 2021-07-09 | 2021-10-15 | 武汉工程大学 | Semiconductor device parameter testing device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN204649917U (en) | A kind of measurement mechanism of MOSFET wafer conducting resistance | |
| CN113759239B (en) | Chip testing device and chip testing method | |
| US8502549B2 (en) | Test apparatus and driver circuit | |
| CN215813162U (en) | Semiconductor device parameter testing device | |
| JPH0472195B2 (en) | ||
| CN107345996A (en) | FET test circuit and method of testing | |
| JPH08240639A (en) | Method for automatic testing of semiconductor diode in electronic testing instrument and portable testing instrument | |
| CN113504447A (en) | Semiconductor device parameter testing device | |
| CN102507431B (en) | Multi-channel galvanic corrosion measurement device | |
| CN106771954A (en) | The capacitor voltage characteristic tester and its method of testing of automatic measurement are carried out to PN junction | |
| CN113960443A (en) | IO static parameter testing method and system | |
| CN112345862B (en) | Test tool system and method for three-terminal isolation sampling module | |
| CN103323765B (en) | A kind of tube characteristic curve tracer | |
| CN114333657A (en) | Current sampling system, adjustable voltage source and image signal generator | |
| US20200150153A1 (en) | Multi-stage current measurement architecture | |
| CN110376499B (en) | System and method for measuring three-terminal current waveform and annealing effect of triode and method for measuring neutron fluence | |
| CN203705600U (en) | Transistor test circuit | |
| CN111337811B (en) | Memristor test circuit | |
| CN211318564U (en) | System for multi-path detection of electrical parameter values by universal meter | |
| CN108267640B (en) | Single-power-supply resistance measuring device | |
| CN106814297B (en) | Full-parameter manual tester for bidirectional thyristor | |
| CN105158567A (en) | Multichannel resistance measuring device and method | |
| CN218630071U (en) | Resistance-capacitance integrated single-machine tester for power semiconductor device | |
| CN215415729U (en) | IGBT drive circuit | |
| CN219417598U (en) | High-precision loop resistance tester |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |