CN215731642U - Adsorption assembly and device for semiconductor thermal compression bonding - Google Patents

Adsorption assembly and device for semiconductor thermal compression bonding Download PDF

Info

Publication number
CN215731642U
CN215731642U CN202121995770.6U CN202121995770U CN215731642U CN 215731642 U CN215731642 U CN 215731642U CN 202121995770 U CN202121995770 U CN 202121995770U CN 215731642 U CN215731642 U CN 215731642U
Authority
CN
China
Prior art keywords
semiconductor
adsorption
piece
assembly
packaging material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202121995770.6U
Other languages
Chinese (zh)
Inventor
施海洋
吴品忠
朱俊
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tongfu Microelectronics Co Ltd
Original Assignee
Tongfu Microelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tongfu Microelectronics Co Ltd filed Critical Tongfu Microelectronics Co Ltd
Priority to CN202121995770.6U priority Critical patent/CN215731642U/en
Application granted granted Critical
Publication of CN215731642U publication Critical patent/CN215731642U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73253—Bump and layer connectors

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

The application relates to the technical field of semiconductor packaging, and discloses an adsorption component and be used for semiconductor thermal compression bonding's device, adsorption component includes: and the adsorption piece comprises a first surface for adsorbing the semiconductor piece, and the first surface is mutually hydrophobic with the packaging material of the adsorbed semiconductor piece. According to the method, the first surface and the packaging material cannot be bonded with each other due to the fact that the affinity and the hydrophobicity of the first surface and the packaging material are mutually sparse, and the packaging material is prevented from polluting an adsorption piece; the orthographic projection of the first surface on the semiconductor can cover the semiconductor, so that the first surface blocks flowing packaging materials from entering between the first surface and the semiconductor, and the packaging materials are prevented from polluting the surface of the semiconductor facing the adsorption component.

Description

Adsorption assembly and device for semiconductor thermal compression bonding
Technical Field
The present application relates generally to the field of semiconductor packaging technology, and more particularly to an adsorption assembly and a device for semiconductor thermocompression bonding.
Background
In the related art, the chip stack bonding mainly adopts a tcb (thermal Compression bonding) + NCF (non-conductive Film) manner, and a suction slot is formed in a suction nozzle to suck the chip, and place the chip on the substrate, and the NCF material is filled between the chip and the substrate.
The NCF material is pressed from the lower portion of the chip to the outside under pressure, and the NCF is extruded higher than the chip surface at the chip edge, so that the NCF is liable to contaminate the nozzle surface.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned drawbacks and deficiencies of the prior art, it is desirable to provide a suction assembly and an apparatus for semiconductor thermal compression bonding.
The present invention provides an adsorption assembly comprising:
and the adsorption piece comprises a first surface for adsorbing the semiconductor piece, and the first surface is mutually hydrophobic with the packaging material of the adsorbed semiconductor piece.
As an implementation-friendly optimal mode, the adsorption piece comprises a main body, at least one side of the main body is provided with a film layer which is hydrophobic to the packaging material of the semiconductor piece, and the surface of the film layer, which is far away from the main body, is the first surface.
Most preferably, the film is a teflon film.
As an achievable optimum, the orthographic projection of the first surface on the semiconductor can cover the semiconductor.
As an implementable optimum, the first surface comprises a first portion near a periphery of the first surface for abutting against the semiconductor piece.
As an implementation-friendly optimum, the first surface further includes a second portion surrounded by the first portion, the adsorbing member further includes a second surface facing away from the semiconductor member, and the adsorbing member is provided with a plurality of channels that are located in the second portion and penetrate the second surface from the first surface.
Preferably, the opening of the channel at the first surface is larger than the opening of the channel at the second surface.
As an optimum way to achieve this, the channels are perpendicular to the first and second surfaces.
The utility model also provides a device for semiconductor thermal compression bonding, which comprises the adsorption component.
Compared with the prior art, the utility model has the beneficial effects that:
according to the method, the first surface and the packaging material cannot be bonded with each other due to the fact that the affinity and the hydrophobicity of the first surface and the packaging material are mutually sparse, and the packaging material is prevented from polluting an adsorption piece; the orthographic projection of the first surface on the semiconductor can cover the semiconductor, so that the first surface blocks flowing packaging materials from entering between the first surface and the semiconductor, and the packaging materials are prevented from polluting the surface of the semiconductor facing the adsorption component.
Drawings
Other features, objects and advantages of the present application will become more apparent upon reading of the following detailed description of non-limiting embodiments thereof, made with reference to the accompanying drawings in which:
fig. 1 is a schematic structural view of an adsorption assembly according to an embodiment of the present application.
Detailed Description
The present application will be described in further detail with reference to the following drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the relevant invention and are not limiting of the utility model. It should be noted that, for convenience of description, only the portions related to the present invention are shown in the drawings.
It should be noted that the embodiments and features of the embodiments in the present application may be combined with each other without conflict. The present application will be described in detail below with reference to the embodiments with reference to the attached drawings.
The chip stacking welding adopts a hot-pressing bonding process, which comprises the following steps:
s1, holding the semiconductor member 30 on the adsorption member by vacuum-pumping;
s2, transferring the semiconductor member 30 onto the substrate 50 for connection;
s3, disposing the encapsulation material 40 between the semiconductor piece 30 and the substrate 50 to form a connection, applying heat through the suction assembly to melt the encapsulation material 40 and cause the encapsulation material 40 to flow;
s4, the suction assembly drives the semiconductor piece 30 toward the substrate 50, thereby mechanically and electrically connecting the semiconductor piece 30 to the substrate 50.
The above steps S1 to S4 are realized by an apparatus for semiconductor thermocompression bonding.
The device for semiconductor thermocompression bonding comprises an adsorption component, a longitudinal telescopic mechanism, a transverse telescopic mechanism and a heating mechanism, wherein the longitudinal telescopic mechanism moves along a first direction, for example, the first direction is a vertical direction, and the transverse telescopic mechanism moves along a second direction, for example, the second direction is a horizontal direction. Wherein the second direction is perpendicular to the first direction. The adsorption component is used for adsorbing the semiconductor piece 30, and the longitudinal telescopic mechanism is connected to the adsorption component and drives the adsorption component to reciprocate along a first direction, namely drives the adsorption component to reciprocate along the first direction; the transverse telescopic mechanism is connected to the longitudinal telescopic mechanism and drives the adsorption component and the telescopic mechanism to reciprocate along the second direction together, namely, the adsorption component is driven to reciprocate along the second direction; heating mechanism sets up in adsorption component for adjust adsorption component's temperature, adsorption component has high temperature resistance's performance.
Fig. 1 shows a schematic view of a suction assembly.
As shown in fig. 1, an adsorption assembly comprises an adsorption member 10, the adsorption member 10 is used for adsorbing a semiconductor piece 30, the adsorption member 10 comprises a first surface 101 facing the semiconductor piece 30, and the first surface 101 is hydrophobic to an encapsulation material 40.
Note that the semiconductor member 30 may be a chip, and the substrate 50 may be a base plate. The material of the adsorption element 10 can be silicon material or silicon carbide material, and has high temperature resistance; the first surface 101 of the suction member 10 faces the semiconductor member 30. The affinity between the first surface 101 and the packaging material 40 is hydrophobic, and the first surface 101 and the molten packaging material 40 cannot be adhered to each other, so that the packaging material 40 is prevented from polluting the adsorption member 10. The absorbent member 10 may be composed of two layers: a first layer adjacent to the semiconductor piece 30 and a second layer connected to the first layer, the first layer being a layer of silicon material or silicon carbide material and the second layer being a material that is hydrophobic to the affinity of the encapsulation material 40. Alternatively, a film having affinity and hydrophobicity with the potting material 40 is provided on the adsorbing member 10.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, so that the above is the core idea of the present invention, and the above objects, features and advantages of the present invention can be more clearly understood. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In a preferred embodiment, the adsorbing member 10 includes a main body, at least one side of the main body is provided with a film layer 20 that is hydrophobic to the packaging material 40, and a surface of the film layer 20 facing away from the main body is a first surface 101, which is simple in structure and convenient to process.
In a preferred embodiment, the film 20 is a teflon film.
The teflon film may have a thickness of 10 to 50um, and has a high temperature resistance and a property of not being bonded to the sealing material 40.
In a preferred embodiment, the orthographic projection of the first surface 101 on the semiconductor piece 30 can cover the semiconductor piece 30.
Note that, in step S1, the suction member is located directly above the semiconductor piece 30, that is, the first surface 101 is located directly above the semiconductor piece 30. The area of the first surface 101 is greater than or equal to the area of the surface of the semiconductor piece 30 facing the suction assembly, and the orthographic projection of the first surface 101 on the semiconductor piece 30 can cover the semiconductor piece 30. The first surface 101 abuts against the surface of the semiconductor element 30 facing the suction assembly without any gap.
The arrangement is such that the first surface 101 blocks the flowing encapsulating material 40 from entering between the first surface 101 and the semiconductor element 30, and the encapsulating material 40 is prevented from contaminating the surface of the semiconductor element 30 facing the suction assembly.
In a particular embodiment, the first surface 101 includes a first portion and a second portion, the first portion surrounding the second portion, the first portion being proximate a perimeter of the first surface. The first portion abuts against the semiconductor element 30, which corresponds to a sealing gasket being provided between the first portion and the semiconductor element 30, which prevents the flow-blocking encapsulating material 40 from entering between the first surface 101 and the semiconductor element 30. Only the flatness of the first portion needs to be guaranteed, so that the first portion and the semiconductor piece 30 can be completely abutted against each other, the processing area is reduced, and the processing cost is reduced.
The suction element 10 further comprises a second surface 102 facing away from the semiconductor element 30, the suction element is provided with a plurality of channels 11, the channels 11 extend from the second portion to the second surface 102, and the channels 11 penetrate through the suction element 10. The axis of the channel 11 may be perpendicular to the first surface 101 and the second surface 102, the axis of the channel 11 may be at a predetermined angle with respect to the first surface 101 (the second surface 102), or the channel 11 may be a curved channel 11. The passage 11 communicates with a vacuum pump, thereby enabling the adsorption assembly to adsorb the semiconductor pieces 30. The channel 11 has one end located at the second portion of the first surface 101, so that the middle position of the semiconductor piece 30 can be adsorbed, which is advantageous for stably adsorbing the semiconductor piece 30.
In some implementations, the opening of the channel 11 at the first surface 101 is larger than the opening of the channel 11 at the second surface 102.
It should be noted that the opening of the channel 11 on the first surface 101 may be flared, and the opening of the channel 11 on the second surface 102 is circular, and the flared shape increases the area of the suction force, which is beneficial to stably sucking the semiconductor piece 30.
In some embodiments, the channels 11 are perpendicular to the first surface 101 and the second surface 102, so as to shorten the path of the adsorption gas path, improve the adsorption effect, and ensure stable adsorption of the semiconductor component.
The application also provides a device for semiconductor hot-press bonding, which comprises the adsorption component, the longitudinal telescopic mechanism, the transverse telescopic mechanism and the heating mechanism. The adsorption component is used for adsorbing the semiconductor piece 30, and the longitudinal telescopic mechanism is connected to the adsorption component and drives the adsorption component to reciprocate along a first direction, namely drives the adsorption component to reciprocate along the first direction; the transverse telescopic mechanism is connected to the longitudinal telescopic mechanism and drives the adsorption component and the telescopic mechanism to reciprocate along the second direction together, namely, the adsorption component is driven to reciprocate along the second direction; heating mechanism sets up in adsorption component for adjust adsorption component's temperature, adsorption component has high temperature resistance's performance.
According to the method, the first surface and the packaging material cannot be bonded with each other due to the fact that the affinity and the hydrophobicity of the first surface and the packaging material are mutually sparse, and the packaging material is prevented from polluting an adsorption piece; the orthographic projection of the first surface on the semiconductor can cover the semiconductor, so that the first surface blocks flowing packaging materials from entering between the first surface and the semiconductor, and the packaging materials are prevented from polluting the surface of the semiconductor facing the adsorption component.
The above description is only a preferred embodiment of the application and is illustrative of the principles of the technology employed. It will be appreciated by those skilled in the art that the scope of the disclosure herein is not limited to the particular combination of features described above, but also encompasses other arrangements formed by any combination of the above features or their equivalents without departing from the spirit of the disclosure. For example, the above features may be replaced with (but not limited to) features having similar functions disclosed in the present application.

Claims (9)

1. A suction assembly, comprising:
and the adsorption piece comprises a first surface for adsorbing the semiconductor piece, and the first surface is mutually hydrophobic with the packaging material of the adsorbed semiconductor piece.
2. The sorption assembly of claim 1, wherein the sorption member comprises a body, at least one side of the body is provided with a membrane layer that is hydrophobic to the encapsulation material of the semiconductor component, and a surface of the membrane layer facing away from the body is the first surface.
3. The adsorbent assembly of claim 2, wherein the membrane layer is a teflon membrane.
4. The adsorbent assembly of claim 1, wherein an orthographic projection of the first surface on the semiconductor can overlie the semiconductor.
5. The adsorbent assembly of claim 1, wherein said first surface includes a first portion proximate a perimeter of said first surface, said first portion for abutting said semiconductor member.
6. The suction assembly of claim 5, wherein the first surface further includes a second portion surrounded by the first portion, the suction member further includes a second surface facing away from the semiconductor member, the suction member being provided with a plurality of channels in the second portion and extending from the first surface through the second surface.
7. The adsorbent assembly of claim 6, in which the opening of the channel at the first surface is larger than the opening of the channel at the second surface.
8. The adsorbent assembly of claim 6, in which the channel is perpendicular to the first surface and the second surface.
9. An apparatus for semiconductor thermocompression bonding, comprising the adsorption member according to any one of claims 1 to 8.
CN202121995770.6U 2021-08-23 2021-08-23 Adsorption assembly and device for semiconductor thermal compression bonding Active CN215731642U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202121995770.6U CN215731642U (en) 2021-08-23 2021-08-23 Adsorption assembly and device for semiconductor thermal compression bonding

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202121995770.6U CN215731642U (en) 2021-08-23 2021-08-23 Adsorption assembly and device for semiconductor thermal compression bonding

Publications (1)

Publication Number Publication Date
CN215731642U true CN215731642U (en) 2022-02-01

Family

ID=80006245

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202121995770.6U Active CN215731642U (en) 2021-08-23 2021-08-23 Adsorption assembly and device for semiconductor thermal compression bonding

Country Status (1)

Country Link
CN (1) CN215731642U (en)

Similar Documents

Publication Publication Date Title
US20220094135A1 (en) Electrical element mounting package, array package, and electrical device
KR100782280B1 (en) Electronic component manufacturing method
US9275949B2 (en) Semiconductor device
US7520052B2 (en) Method of manufacturing a semiconductor device
TWI643270B (en) Electronic circuit device and manufacturing method of electronic circuit device
TWI604568B (en) Package module, stack structure of package madule, and fabricating methods thereof
US8058717B2 (en) Laminated body of semiconductor chips including pads mutually connected to conductive member
US8999758B2 (en) Fixing semiconductor die in dry and pressure supported assembly processes
JPWO2017164385A1 (en) Bonding device
TW201218317A (en) Method of multi-chip stacking for decreasing void between chips
KR20100006154A (en) Collet for transferring a semiconductor chip and apparatus including the same
JP6695597B2 (en) Electronic component mounting device
CN203850255U (en) A bonding apparatus
KR20130083249A (en) Semiconductor apparatus, image sensor package using the same
JP2021034606A (en) Semiconductor device and manufacturing method of the same
CN215731642U (en) Adsorption assembly and device for semiconductor thermal compression bonding
CN103928409B (en) A kind of integrated circuit back-off weldering air-tight packaging structure
CN112652696B (en) LED light-emitting device and manufacturing method thereof
EP3913666A1 (en) Direct liquid cooling with o-ring sealing
US20160111317A1 (en) Semiconductor manufacturing apparatus
US20230207754A1 (en) Light-emitting diode device and method for manufacturing the same
JP2004193363A (en) Semiconductor device and method of manufacturing the same
US8062571B2 (en) Resin sealing method in stacked wiring substrate
TWI618157B (en) Electronic component mounting device
WO2023032462A1 (en) Semiconductor apparatus, and manufacturing method therefor

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant