CN215680694U - Perovskite/silicon heterojunction tandem solar cell and perovskite solar cell - Google Patents
Perovskite/silicon heterojunction tandem solar cell and perovskite solar cell Download PDFInfo
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Abstract
The utility model discloses a perovskite/silicon heterojunction tandem solar cell and a perovskite solar cell, wherein the perovskite solar cell comprises a perovskite layer, an electron transmission layer and a transparent electrode layer, the electron transmission layer is an organic compound layer, and the electron transmission layer is arranged on the perovskite layer; the transparent electrode layer is arranged on the electron transmission layer, the transparent electrode layer is a reaction plasma deposition layer, and the transparent electrode layer is in direct contact with the electron transmission layer. The perovskite solar cell provided by the embodiment of the utility model has the advantages of high light transmittance, low production cost, stable output power and the like.
Description
Technical Field
The utility model relates to the technical field of solar cells, in particular to a perovskite/silicon heterojunction tandem solar cell and a perovskite solar cell.
Background
Among the various types of solar cells, silicon heterojunction solar cells have gradually established a significant advantage in the photovoltaic industry due to their advantages of high conversion efficiency, high open-circuit voltage, low temperature coefficient, and the like. Perovskite solar cells are the fastest growing solar cell technology in recent years, and the efficiency of the perovskite solar cells is increased from the first 3.8% to the current 25.5%. The perovskite has the characteristics of adjustable forbidden band width, simple preparation process, low cost and the like. The silicon heterojunction cell and the perovskite are made into the laminated solar cell, so that the absorption spectrum can be maximized, and the cell efficiency is improved. In the related art, the perovskite/silicon heterojunction tandem solar cell has the problems of low efficiency, unstable output power and the like.
SUMMERY OF THE UTILITY MODEL
The present invention is based on the discovery and recognition by the inventors of the following facts and problems:
the magnetron sputtering (PVD) coating is that high-energy particles are utilized to bombard the surface of a target material in a vacuum chamber, so that the bombarded particles form a thin film on the surface of the substrate. The particle energy range of PVD coating technology is 1 eV-3 eV, but the plasma contains a large number of energetic particles with energy higher than 100eV, such as secondary electrons, argon ions, oxygen ions, etc. In the related art, a perovskite cell in a perovskite/silicon heterojunction tandem solar cell comprises a perovskite layer, an electron transport layer and a transparent electrode layer which are sequentially arranged from bottom to top. The transparent electrode layer is made of a PVD coating, high-energy particles have a strong bombardment etching effect on the surface of the substrate, and in the structure without the barrier layer, the high-energy particles can penetrate through the electron transmission layer to damage the perovskite layer and damage the surface of the perovskite layer.
In the related art, in order to protect the perovskite layer, before PVD coating is used, a metal oxide layer is required to cover the surface of the electron transport layer to serve as a barrier layer, and the barrier layer is used to isolate the damage of the high-energy particles to the surface of the perovskite layer. Due to the structural limitation of the trans-perovskite, the barrier layer is often selected from n-type metal oxides such as tin oxide, zinc oxide, titanium oxide, and the like, and also serves as an auxiliary electron transport layer. In addition, although the barrier layer is not arranged in part of the perovskite battery, the electron transport layer adopts metal oxide, and actually the electron transport layer is utilized to serve as the barrier layer.
Due to the introduction of the barrier layer, the preparation steps of the laminated solar cell are increased, the production cost of the laminated solar cell is increased, the thickness of an electronic transmission layer is increased, extra infrared spectrum loss is caused, the efficiency loss of a bottom cell is caused, and the efficiency of the whole laminated solar cell is finally influenced. Meanwhile, due to the low electron transport rate of the n-type metal oxide, the electron transport at the interface contacting with the n-type metal oxide is unbalanced, and further the hysteresis effect of the top cell (perovskite cell) is caused, so that the tandem solar cell cannot stably output with larger power
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art.
Therefore, the embodiment of the utility model provides a perovskite solar cell with high light transmittance.
Embodiments of the present invention provide a perovskite/silicon heterojunction tandem solar cell having the above-described perovskite solar cell.
A perovskite solar cell according to an embodiment of the present invention includes:
a perovskite layer;
an electron transport layer that is an organic compound layer, the electron transport layer being disposed on the perovskite layer; and
the transparent electrode layer is arranged on the electron transmission layer and is a reaction plasma deposition layer, and the transparent electrode layer is in direct contact with the electron transmission layer.
The perovskite solar cell provided by the embodiment of the utility model has the advantages of high light transmittance, low production cost, stable output power and the like.
In some embodiments, the material of the electron transport layer is one or more of fullerene, PCBM, BCP and PEIE, and the thickness of the electron transport layer is 10nm-20 nm.
In some embodiments, the transparent electrode layer is a transparent conductive oxide thin film.
In some embodiments, the transparent electrode layer is made of one or more of ITO, IZO, AZO, IWO and ICO, and the thickness of the transparent electrode layer is 40nm to 120 nm.
In some embodiments, further comprising a antireflection film disposed on the perovskite layer.
In some embodiments, further comprising a perovskite interface modification layer disposed on the perovskite layer, the electron transport layer being disposed on the perovskite interface modification layer.
In some embodiments, further comprising:
an anti-reflection layer disposed on the transparent electrode layer; and
and the metal grid line electrode is arranged on the anti-reflection layer.
A perovskite/silicon heterojunction tandem solar cell according to an embodiment of the present invention comprises:
a silicon heterojunction cell; and
a perovskite cell disposed on the silicon heterojunction cell, the perovskite cell being a perovskite solar cell according to any embodiment of the utility model.
The perovskite solar cell provided by the embodiment of the utility model has the advantages of high efficiency, low production cost, stable output power and the like.
In some embodiments, further comprising a tunneling junction disposed on the silicon heterojunction cell, the perovskite cell disposed on the tunneling junction such that the silicon heterojunction cell is in series with the perovskite cell.
In some embodiments, the tunnel junction has a thickness of 10nm to 100 nm.
Drawings
Figure 1 is a perovskite/silicon heterojunction tandem solar cell according to one embodiment of the present invention.
Reference numerals:
a tandem solar cell 1000;
a metal bottom electrode 101; a transparent conductive layer 102; a p-type amorphous silicon layer 103; a first intrinsic amorphous silicon layer 104; an n-type silicon wafer 105; a second intrinsic amorphous silicon layer 106; an n-type amorphous silicon layer 107; a tunneling junction 108; a hole transport layer 109; a perovskite layer 110; an electron transport layer 111; a transparent electrode layer 112; the metal gate line electrode 113.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the utility model and are not to be construed as limiting the utility model.
As shown in fig. 1, a perovskite/silicon heterojunction tandem solar cell (hereinafter referred to as a tandem solar cell 1000) according to an embodiment of the present invention includes a silicon heterojunction cell (silicon heterojunction solar cell) and a perovskite cell (perovskite solar cell) disposed on the silicon heterojunction cell.
A perovskite battery according to an embodiment of the present invention is described below with reference to the accompanying drawings.
As shown in fig. 1, the perovskite battery includes a perovskite layer 110, an electron transport layer 111, and a transparent electrode layer 112. The electron transport layer 111 is an organic compound layer, the electron transport layer 111 is provided on the perovskite layer 110, and the transparent electrode layer 112 is provided on the electron transport layer 111. The transparent electrode layer 112 is a reactive plasma deposition layer, and the transparent electrode layer 112 and the electron transport layer 111 are in direct contact.
In the related art, the transparent electrode layer of the perovskite battery is manufactured by a magnetron sputtering method (PVD), and a barrier layer needs to be disposed between the electron transport layer and the transparent electrode layer to protect the perovskite layer. The barrier layer undoubtedly reduces the light transmittance of the perovskite cell, thereby reducing the efficiency of the bottom cell (silicon heterojunction cell), which in turn affects the efficiency of the tandem solar cell. In addition, due to the structural limitation of the trans-perovskite, the barrier layer and the electron transport layer are often made of n-type metal oxide, and the electron transport rate of the n-type metal oxide is low, so that the electron transport at the interface in contact with the n-type metal oxide is unbalanced, and further the hysteresis effect of the top cell (perovskite cell) is caused, and the stacked solar cell cannot stably output high power.
The transparent electrode layer of the perovskite battery according to the embodiment of the present invention employs a reactive plasma deposition layer, i.e., the transparent electrode layer 112 is fabricated using a reactive plasma deposition method. The RPD device uses an ion source to bombard a target material after deflection of a magnetic field, bombards target material atoms out and deposits the target material atoms on an electron transport layer, the plasma energy distribution is relatively concentrated and the ionization rate is higher, the energy distribution of effective particles is in the range of 20eV-30eV, the energy of the effective particles is small, the damage to the electron transport layer is small or even not damaged, and the perovskite layer cannot be damaged by penetrating through the electron transport layer, therefore, the electron transport layer can only use organic compounds, and a transparent electrode layer can be directly deposited on the electron transport layer.
Therefore, a barrier layer is omitted, on one hand, the thickness of an electron transmission layer is reduced, the loss of infrared spectrum is reduced, and the light transmittance of the perovskite cell is improved, so that the efficiency of the bottom cell can be improved, and the efficiency of the laminated solar cell can be improved; on the other hand, the preparation steps of the perovskite battery are reduced, so that the production cost of the perovskite battery can be reduced, and the production cost of the laminated solar battery with the perovskite battery can be reduced. In addition, the electron transport layer is made of organic compounds which have good interface contact effect, so that the open-circuit voltage of the perovskite cell can be effectively improved, and the efficiencies of the perovskite cell and the tandem solar cell can be further improved. And the electron transmission rate of the organic compound is high, so that the phenomenon of unbalanced electron transport at the interface in contact with the organic compound can be effectively reduced, the hysteresis effect of the perovskite battery can be effectively inhibited, and the perovskite battery can be stably output with higher power.
Therefore, the perovskite battery provided by the embodiment of the utility model has the advantages of high light transmittance, low production cost, stable output power and the like.
The tandem solar cell 1000 according to the embodiment of the present invention has the advantages of high efficiency, low production cost, stable output power, etc.
Optionally, the perovskite layer 110 is fabricated using spin coating, evaporation, sputtering, spray coating, doctor blading, or printing processes.
In some embodiments, the silicon heterojunction cell includes a metal bottom electrode 101, a transparent conductive layer 102, a p-type amorphous silicon layer 103, a first intrinsic amorphous silicon layer 104, an n-type silicon wafer 105, a second intrinsic amorphous silicon layer 106, and an n-type amorphous silicon layer 107, which are sequentially disposed. Wherein the transparent conductive layer 102 is disposed on the metal bottom electrode 101, the p-type amorphous silicon layer 103 is disposed on the transparent conductive layer 102, the first intrinsic amorphous silicon layer 104 is disposed on the p-type amorphous silicon layer 103, the n-type silicon wafer 105 is disposed on the first intrinsic amorphous silicon layer 104, the second intrinsic amorphous silicon layer 106 is disposed on the n-type silicon wafer 105, and the n-type amorphous silicon layer 107 is disposed on the second intrinsic amorphous silicon layer 106.
Alternatively, the p-type amorphous silicon layer 103, the first intrinsic amorphous silicon layer 104, the second intrinsic amorphous silicon layer 106, and the n-type amorphous silicon layer 107 are formed by plasma enhanced chemical vapor deposition or the like.
Optionally, the transparent conductive layer 102 is fabricated by magnetron sputtering (PVD), Reactive Plasma Deposition (RPD), Atomic Layer Deposition (ALD), or evaporation or thermal growth.
Alternatively, the metal bottom electrode 101 is formed by evaporation, sputtering, printing, or electroplating.
In some embodiments, the tandem solar cell 1000 further comprises a tunnel junction 108, the tunnel junction 108 disposed on a silicon heterojunction cell, the perovskite cell disposed on the tunnel junction 108 such that the silicon heterojunction cell is in series with the perovskite cell.
Specifically, a positive terminal is arranged on the silicon heterojunction battery, a negative terminal is arranged on the perovskite battery, the positive terminal is a positive wiring terminal of the tandem solar battery 1000, and the negative terminal is a negative wiring terminal of the tandem solar battery 1000.
Thus, the tandem solar cell 1000 is a monolithically integrated two-terminal string cell overall. The number of functional layers is small, and low cost and low optical and electrical losses can be realized. In addition, the two-end sub-string battery only needs one junction box, and is easier to integrate into a photovoltaic system.
Optionally, the material of the tunnel junction 108 is one or more of ITO, IZO, AZO, IWO, ICO, or other transparent thin film materials.
Optionally, the tunnel junction 108 has a thickness of 10nm to 100 nm.
Alternatively, the tunnel junction 108 is fabricated by magnetron sputtering (PVD), Reactive Plasma Deposition (RPD), Atomic Layer Deposition (ALD), evaporation, or thermal growth.
In some embodiments, positive and negative terminals are provided on both the perovskite cell and the silicon heterojunction cell to form a four terminal stacked solar cell.
In some embodiments, the electron transport layer 111 is made of one or more of fullerene, PCBM, BCP and PEIE, and has a thickness of 10nm to 20 nm.
The fullerene, PCBM, BCP and PEIE materials all have good conductive performance.
Therefore, under the condition that the thickness of the electron transport layer is small, the open-circuit voltage of the perovskite battery is improved, the hysteresis effect of the perovskite battery is effectively inhibited, and the perovskite battery can be stably output with large power.
In some embodiments, the transparent electrode layer 112 is a transparent conductive oxide thin film.
Thus, the transparent electrode layer 112 is conveniently fabricated using a reactive plasma deposition method.
Optionally, the material of the transparent electrode layer 112 is one or a combination of ITO, IZO, AZO, IWO and ICO, and the thickness of the transparent electrode layer is 40nm to 120 nm.
In some embodiments, the perovskite cell further comprises a hole transport layer 109, the hole transport layer 109 disposed on the silicon heterojunction cell, and the perovskite layer 110 disposed on the hole transport layer 109.
Optionally, the material of the hole transport layer 109 is PTAA, NiOx, MoOx, PEDOT: PSS, Sprio-OMeTAD, PolyTPD and Spiro-TTB.
Alternatively, the hole transport layer 109 is formed by spin coating, evaporation, sputtering, spray coating, blade coating, or printing.
In some embodiments, the perovskite cell further comprises an anti-reflection film (not shown in the figures) disposed on the perovskite cell.
Thus, reflection, refraction and scattering phenomena may occur when sunlight passes through the anti-reflection film, so that the optical path of sunlight in the perovskite solar cell is increased, the perovskite layer 110 can absorb more light energy, and further, the efficiency of the perovskite cell and the tandem solar cell 1000 is further improved.
Optionally of antireflection filmsThe material is LiF or MgF2、AlN、ZnS、Si3N4Or a flexible film with a light trapping structure.
In some embodiments, the perovskite battery further comprises a perovskite interface modification layer (not shown), the perovskite interface modification layer being disposed on the perovskite layer 110, and the electron transport layer 111 being disposed on the perovskite interface modification layer.
Therefore, on one hand, the perovskite interface modification layer can improve the affinity of the electron transmission layer 111, so that the carrier transportation is better realized on the interface of the electron transmission layer 111 and the perovskite layer 110, and the efficiency of the perovskite battery and the efficiency of the tandem solar battery are improved; on the other hand, the perovskite interface modification layer can improve the charge collection efficiency, reduce the interface defects of the electron transport layer 111 and the perovskite layer 110, and is beneficial to further improving the efficiency of the perovskite cell and the laminated solar cell.
Optionally, the perovskite interface modification layer may be fabricated by spin coating, evaporation, spraying, blade coating, or printing.
In some embodiments, the perovskite cell further comprises an anti-reflective layer (not shown) disposed on the transparent electrode layer 112 and a metal grid line electrode 113 disposed on the anti-reflective layer.
Therefore, on one hand, the anti-reflection layer can be used for increasing the sunlight absorption capacity of the perovskite battery, and the efficiency of the perovskite battery and the efficiency of the tandem solar battery are improved; on the other hand, the anti-reflection layer can effectively prevent the metal grid line electrode 113 from being in physical contact with the perovskite layer 110, so that charge loss caused by contact between the metal grid line electrode 113 and the perovskite layer 110 is prevented, and the efficiency of the perovskite battery and the efficiency of the tandem solar battery are further improved.
Optionally, the anti-reflection layer is manufactured by spin coating, sputtering, thin film transfer or other processes.
Alternatively, the metal gate line electrode 113 is manufactured by evaporation, sputtering, printing, or electroplating.
In order to make the technical solution of the present application easier to understand, the technical solution of the present application will be described below by taking an example in which the thickness direction of the perovskite layer 110 coincides with the vertical direction.
The perovskite cell is disposed above the tunnel junction 108 and the silicon heterojunction cell is disposed below the tunnel junction 108. The upper part of the perovskite battery is provided with a negative terminal, the lower part of the silicon heterojunction battery is provided with a positive terminal, and the perovskite battery is in the light incidence direction. The hole transport layer 109, the perovskite layer 110, the electron transport layer 111, the transparent electrode layer 112 and the metal grid line electrode 113 of the perovskite cell are sequentially arranged from bottom to top. The n-type amorphous silicon layer 107, the second intrinsic amorphous silicon layer 106, the n-type silicon wafer 105, the first intrinsic amorphous silicon layer 104, the p-type amorphous silicon layer 103, the transparent conductive layer 102 and the metal bottom electrode 101 of the silicon heterojunction cell are sequentially arranged from bottom to top.
Optionally, the overall thickness of the silicon heterojunction cell is no more than 300 μm, and the thickness of the tunneling junction 108 is 10nm-100 nm. The thickness of the perovskite layer 110 in the perovskite cell is not more than 2 μm, and the thickness of each of the electron transport layer 111 and the hole transport layer 109 in the perovskite cell is not more than 100 nm.
The fabrication process of the tandem solar cell 1000 according to the embodiment of the present invention:
step 1, preparing an intrinsic amorphous silicon layer (a first intrinsic amorphous silicon layer 104 and a second intrinsic amorphous silicon layer 106) on each of two surfaces (an upper surface and a lower surface) of an n-type silicon wafer 105;
step 2, depositing a p-type amorphous silicon layer 103 on one surface (lower surface) of the first intrinsic amorphous silicon layer 104;
step 3, depositing an n-type amorphous silicon layer (n-type amorphous silicon layer 107) on one surface (upper surface) of the second intrinsic amorphous silicon layer 106;
step 4, preparing a transparent conducting layer 102 on one surface (lower surface) of the p-type amorphous silicon layer 103;
step 5, preparing a tunnel junction 108 on one surface (upper surface) of n-type amorphous silicon or the like 107;
step 6, preparing a metal bottom electrode 101 on one surface (lower surface) of the transparent conductive layer 102;
step 7, preparing a hole transport layer 109 on the upper part of the tunnel junction 108;
step 8, preparing a perovskite layer 110 on one surface (upper surface) of the hole transport layer 109;
step 9, preparing an electron transport layer 111 on one surface (upper surface) of the perovskite layer 110;
step 10, preparing a transparent electrode layer 112 on one surface (upper surface) of the electron transport layer 111;
step 11, preparing a metal gate line electrode 113 on one surface (upper surface) of the transparent electrode layer 112.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the utility model and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the utility model.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; may be mechanically coupled, may be electrically coupled or may be in communication with each other; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
In the present disclosure, the terms "one embodiment," "some embodiments," "an example," "a specific example," or "some examples" and the like mean that a specific feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present disclosure. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. A perovskite solar cell, comprising:
a perovskite layer;
an electron transport layer that is an organic compound layer, the electron transport layer being disposed on the perovskite layer; and
the transparent electrode layer is arranged on the electron transmission layer and is a reaction plasma deposition layer, and the transparent electrode layer is in direct contact with the electron transmission layer.
2. The perovskite solar cell of claim 1, wherein the electron transport layer is made of one or more of fullerene, PCBM, BCP and PEIE, and has a thickness of 10nm-20 nm.
3. The perovskite solar cell of claim 1, wherein the transparent electrode layer is a transparent conductive oxide thin film.
4. The perovskite solar cell of claim 3, wherein the transparent electrode layer is made of one or more of ITO, IZO, AZO, IWO and ICO, and has a thickness of 40nm to 120 nm.
5. The perovskite solar cell of any one of claims 1 to 4, further comprising an anti-reflection film disposed on the perovskite layer.
6. The perovskite solar cell of any one of claims 1-4, further comprising a perovskite interface modification layer disposed on the perovskite layer, the electron transport layer being disposed on the perovskite interface modification layer.
7. The perovskite solar cell of any one of claims 1 to 4, further comprising:
an anti-reflection layer disposed on the transparent electrode layer; and
and the metal grid line electrode is arranged on the anti-reflection layer.
8. A perovskite/silicon heterojunction tandem solar cell, comprising:
a silicon heterojunction cell; and
a perovskite cell disposed on the silicon heterojunction cell, the perovskite cell being a perovskite solar cell according to any of claims 1-7.
9. The perovskite/silicon heterojunction tandem solar cell of claim 8, further comprising a tunneling junction disposed on the silicon heterojunction cell, the perovskite cell being disposed on the tunneling junction such that the silicon heterojunction cell is in series with the perovskite cell.
10. The perovskite/silicon heterojunction tandem solar cell of claim 9, wherein the thickness of the tunneling junction is 10nm to 100 nm.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115274767A (en) * | 2022-04-01 | 2022-11-01 | 国家电投集团科学技术研究院有限公司 | Laminated solar cell |
| WO2023185464A1 (en) | 2022-03-29 | 2023-10-05 | 宣城先进光伏技术有限公司 | Perovskite/silicon heterojunction tandem solar cell and production method therefor |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023185464A1 (en) | 2022-03-29 | 2023-10-05 | 宣城先进光伏技术有限公司 | Perovskite/silicon heterojunction tandem solar cell and production method therefor |
| CN115274767A (en) * | 2022-04-01 | 2022-11-01 | 国家电投集团科学技术研究院有限公司 | Laminated solar cell |
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