CN111326659A - Metal transparent electrode and organic solar cell - Google Patents

Metal transparent electrode and organic solar cell Download PDF

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CN111326659A
CN111326659A CN202010112146.0A CN202010112146A CN111326659A CN 111326659 A CN111326659 A CN 111326659A CN 202010112146 A CN202010112146 A CN 202010112146A CN 111326659 A CN111326659 A CN 111326659A
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metal
solar cell
layer
organic solar
transparent electrode
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CN111326659B (en
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臧月
陈岭风
辛青
林君
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Hangzhou Dianzi University
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

The invention relates to the technical field of solar cells, in particular to a metal transparent electrode and an organic solar cell. The metal transparent electrode adopts a composite structure of the metal film/the metal grid, on one hand, the capture of incident light is enhanced by utilizing the optical resonance microcavity effect formed between the metal film and the back electrode, and higher photocurrent is obtained. On the other hand, aiming at the problem of uneven carrier collection efficiency distribution in a large-area device, the transmission and collection efficiency of carriers in the large-area device is improved by preparing the metal grids with the conductive stepped distribution on the metal film.

Description

Metal transparent electrode and organic solar cell
Technical Field
The invention relates to the technical field of solar cells, in particular to a metal transparent electrode and an organic solar cell.
Background
The device efficiency of organic solar cells has reached the standard for commercialization, and how to efficiently convert small-area devices in laboratories into large-area modules becomes a crucial issue.
However, as the cell area increases, the photovoltaic characteristics of the device may significantly decrease. This is because in a large-area device, the transmission distance of carriers in the horizontal direction is increased, the transmission efficiency is unevenly distributed, and when the conductivity of the electrode is poor, the series resistance of the device is significantly increased, which leads to a reduction in the carrier collection efficiency, and further affects the performance of the large-area device.
At present, a commonly used transparent electrode material of an organic solar cell is ITO, and the application of the ITO in a large-area device is limited due to the large sheet resistance of the ITO. In addition, ITO has other disadvantages, such as brittleness, poor flexibility, high manufacturing cost, etc. Therefore, in order to obtain a large-area device module with high conversion efficiency, a new flexible transparent electrode material with high conductivity and high transmittance must be found.
Disclosure of Invention
The invention provides a novel flexible metal transparent electrode with high conductivity and high transmittance, aiming at overcoming the problems of fragility, poor flexibility and high preparation cost of the conventional transparent electrode material commonly used by the organic solar cell.
The invention also provides an organic solar cell comprising the metal transparent electrode, which aims to overcome the problem that the photovoltaic property of a device is obviously reduced along with the increase of the cell area of the existing organic solar cell, and improve the transmission and collection efficiency of current carriers in a large-area device.
In order to achieve the purpose, the invention adopts the following technical scheme:
the metal transparent electrode sequentially comprises a seed crystal layer, a metal film and a metal grid from bottom to top, wherein the metal grid is of a stepped structure with gradually increased conductivity. The step structure with gradually increased conductivity is a plurality of metal grid array structures with different sizes, the thickness of metal grids in the structure is gradually increased, the density of the metal grids is gradually increased, and the line width of the metal grids is gradually decreased.
The metal transparent electrode designed by the invention adopts a composite structure of the metal film/the metal grid, and on one hand, the capture of incident light is enhanced by utilizing the optical resonance microcavity effect formed between the metal film and the back electrode, and higher photocurrent is obtained. On the other hand, aiming at the problem of uneven distribution of the carrier collection efficiency in a large-area device, the transmission and collection efficiency of the carriers in the large-area device is improved by preparing the metal grids with the conductive step distribution on the metal film. Meanwhile, in order to ensure that the electrode has higher light transmittance, the line width of the metal grid should be as small as possible, so as to reduce shadow loss as much as possible. Therefore, compared with the traditional ITO electrode, the metal transparent electrode can adjust the optical field distribution in the device, improve the utilization rate of light, reduce the energy loss of the large-area device and improve the energy conversion efficiency of the large-area device.
Preferably, the material of the metal grid is Ag, Au, Cu or Al.
Preferably, the thickness of the metal grid is 5-30 nm; the diameter of an inscribed circle of the metal grid is 50-200 mu m; the line width of the metal grid is 5-20 mu m.
The specification of the metal grid has great influence on the performance of the metal transparent electrode, and the surface roughness of the metal grid film is increased due to too large thickness; too large a metal mesh results in a decrease in conductivity, too small a metal mesh results in a loss of mesh characteristics, and too large a line width results in a decrease in light transmittance.
Preferably, the material of the seed crystal layer is MoO3ZnO or TeO2(ii) a The thickness of the seed crystal layer is 40-50 nm.
Preferably, the metal film is made of Ag, Au, Cu or Al; the thickness of the metal film is 5-20 nm.
An organic solar cell comprising any one of the metal transparent electrodes, wherein the organic solar cell comprises a substrate, the metal transparent electrode, a cathode buffer layer, a photoactive layer, an anode buffer layer and a back electrode in sequence from the bottom surface to the top surface.
Preferably, the substrate is made of glass or polyester film; the cathode buffer layer is made of a first metal oxide or an organic material; the photoactive layer is an electron donor and electron acceptor composite film; the anode buffer layer is made of a second metal oxide, a polymer or graphene; the back electrode is made of Ag, Au, Cu or Al.
The electron donor and electron acceptor composite film is used as a photoactive layer and has the functions of absorbing sunlight, generating composite electron pairs and separating to form electrons and holes in an organic solar cell device.
Preferably, the first metal oxide is ZnO or SnO2The metal oxide has the characteristics of proper energy level structure, environmental friendliness, low cost and high transparency, and has the functions of adjusting the optical field distribution in the active layer, improving the internal optical field intensity, blocking holes and improving the electron transmission and collection capacity at the interface of the electrode when being used as a cathode buffer layer in an organic solar cell device.
Preferably, the organic material is Bphen or PFN-Br, the organic material has the characteristics of good solubility in different solvents and easy adjustment of physical and chemical properties, and the organic material is used as a cathode buffer layer to improve the dipole between the cathode buffer layer and an electrode and improve the open-circuit voltage, the short-circuit current and the filling factor in an organic solar cell device.
Preferably, the second metal oxide is MoO3、V2O5、WO3NiO or V2O5The metal oxide has the characteristic of higher work function, has good optical transmittance in visible light and near infrared regions, and has the functions of forming ohmic contact with an active layer in an organic solar cell device as an anode buffer layer, promoting charge separation, effectively blocking electrons and ensuring efficient hole transmission.
Preferably, the polymer is PEDOT, PSS or PANI, has the characteristics of higher conductivity, easy synthesis and good environmental stability, and has the functions of inhibiting the recombination of interface charges, regulating and controlling the appearance of an active layer, improving the conversion efficiency and ensuring the high-efficiency transmission of holes when being used as an anode buffer layer in an organic solar cell device.
Preferably, the electron donor is P3HT, PTB7, PTB7-Th or PBDB-T; the electron acceptor is a fullerene derivative or a non-fullerene acceptor material; the fullerene derivative is PC61BM or PC71BM; the non-fullerene acceptor material is Y6 or IEICO-4F.
Therefore, the invention has the following beneficial effects:
(1) the metal transparent electrode adopts a composite structure of the metal film/the metal grid, on one hand, the capture of incident light is enhanced by utilizing the optical resonance microcavity effect formed between the metal film and the back electrode, and higher photocurrent is obtained. On the other hand, aiming at the problem of uneven distribution of the carrier collection efficiency in a large-area device, the transmission and collection efficiency of the carriers in the large-area device is improved by preparing the metal grids with the conductive stepped distribution on the metal film;
(2) the organic solar cell adopting the metal transparent electrode has higher carrier transmission and collection efficiency, and avoids the problem that the photovoltaic characteristic is reduced along with the increase of the cell area.
Drawings
Fig. 1 is a schematic structural view of a metal transparent electrode of the present invention.
Fig. 2 is a schematic structural view of an organic solar cell of the present invention.
FIG. 3 is an I-V graph of an organic solar cell device of example 11.
Detailed Description
The technical solution of the present invention is further specifically described below by using specific embodiments and with reference to the accompanying drawings.
In the present invention, all the equipment and materials are commercially available or commonly used in the art, and the methods in the following examples are conventional in the art unless otherwise specified.
Example 1:
carrying out ultrasonic cleaning on the glass substrate by using a detergent, isopropanol, ethanol and acetone in sequence, and drying by using nitrogen after cleaning; preparing a ZnO film on the surface of the glass substrate by using a spin coating method, wherein the thickness of the ZnO film is about 45 nm; then a 5 nm ultrathin Ag film is evaporated on the surface of the ZnO film in vacuum; then Ag grids with the thickness of 10 nm, 15 nm, 20nm and 25 nm, the diameter of the corresponding inscribed circle of 200 μm, 150 μm, 100 μm and 50 μm and the line width of 5 μm are respectively evaporated on the Ag grids to form the metal transparent electrode with the conductive step distribution as shown in figure 1.
30nm SnO is coated on the surface of the transparent metal electrode in a spin coating mode2(cathode buffer layer), and annealing the formed film, wherein the annealing temperature is 150 ℃, and the annealing time is 10 minutes; followed by spin coating of PTB7-Th and PC71Mixed solution of BM, PTB7-Th with PC71The mass ratio of BM is 1:1.5, and a layer of PTB7-Th with a thickness of 90 nm and PC is obtained71Mixed film (active layer) of BM; then a layer of MoO with the thickness of 8 nm is evaporated on the active layer in vacuum3(anode buffer layer); finally, a layer of 100 nm thick Ag is vacuum-evaporated on the anode modification layer to serve as an anode, so that the organic solar cell shown in fig. 2 is obtained, and the photoelectric conversion efficiency of the organic solar cell is 7.3%.
Example 2:
carrying out ultrasonic cleaning on the glass substrate by using a detergent, isopropanol, ethanol and acetone in sequence, and drying by using nitrogen after cleaning; MoO is prepared on the surface of a glass substrate by using a spin coating method3A thin film having a thickness of about 40 nm; then in MoO3A 5 nm ultrathin Au film is evaporated on the surface of the film in vacuum; then, Ag grids with a step structure having a thickness of 10 nm, 15 nm, 20nm and 25 nm, a diameter of 200 μm, 150 μm, 100 μm and 50 μm respectively corresponding to the inscribed circle and a line width of 5 μm were deposited on the transparent metal electrode by vapor deposition to form a conductive step-distributed metal transparent electrode as shown in FIG. 1.
Spin-coating 30nm of Bphen (cathode buffer layer) on the surface of the transparent metal electrode, and annealing the formed film at 150 ℃ for 10 minutes; followed by spin coating P3HT and PC71Mixed solution of BM, PTB7-Th with PC71BM mass ratio of 1:1.5, a layer of PTB7 having a thickness of 90 nm was obtained-Th and PC71Mixed film (active layer) of BM; then a layer of MoO with the thickness of 8 nm is evaporated on the active layer in vacuum3(anode buffer layer); finally, a layer of 100 nm thick Ag is vacuum-evaporated on the anode modification layer to serve as an anode, so that the organic solar cell shown in fig. 2 is obtained, and the photoelectric conversion efficiency of the organic solar cell is 7.1%.
Example 3:
carrying out ultrasonic cleaning on the glass substrate by using a detergent, isopropanol, ethanol and acetone in sequence, and drying by using nitrogen after cleaning; TeO is prepared on the surface of the glass substrate by using a spin coating method2A thin film having a thickness of about 50 nm; then at TeO2A 5 nm ultrathin Cu film is evaporated on the surface of the film in vacuum; then, Ag grids with a step structure having a thickness of 10 nm, 15 nm, 20nm and 25 nm, a diameter of 200 μm, 150 μm, 100 μm and 50 μm respectively corresponding to the inscribed circle and a line width of 5 μm were deposited on the transparent metal electrode by vapor deposition to form a conductive step-distributed metal transparent electrode as shown in FIG. 1.
Spin-coating PFN-Br (cathode buffer layer) with the thickness of 30nm on the surface of the transparent metal electrode, and annealing the formed film at the temperature of 150 ℃ for 10 minutes; followed by spin coating of PTB7 and PC71Mixed solution of BM, PTB7-Th with PC71The mass ratio of BM is 1:1.5, and a layer of PTB7-Th with a thickness of 90 nm and PC is obtained71Mixed film (active layer) of BM; then a layer of MoO with the thickness of 8 nm is evaporated on the active layer in vacuum3(anode buffer layer); finally, a layer of 100 nm thick Ag is vacuum-evaporated on the anode modification layer to serve as an anode, so that the organic solar cell shown in fig. 2 is obtained, and the photoelectric conversion efficiency of the organic solar cell is 7.2%.
Example 4:
carrying out ultrasonic cleaning on the glass substrate by using a detergent, isopropanol, ethanol and acetone in sequence, and drying by using nitrogen after cleaning; preparing a ZnO film on the surface of the glass substrate by using a spin coating method, wherein the thickness of the ZnO film is about 45 nm; then a 10 nm ultrathin Al film is evaporated on the surface of the ZnO film in vacuum; then, Ag grids with a step structure having a thickness of 15 nm, 20nm, 25 nm and 30nm, a diameter of 200 μm, 150 μm, 100 μm and 50 μm corresponding to the inscribed circle, and a line width of 5 μm were deposited on the transparent metal electrode by vapor deposition, thereby forming a transparent metal electrode with a conductive step distribution as shown in FIG. 1.
Spin-coating ZnO (cathode buffer layer) with the thickness of 30nm on the surface of the transparent metal electrode, and annealing the formed film, wherein the annealing temperature is 150 ℃, and the annealing time is 10 minutes; followed by spin coating of PBDB-T and PC71Mixed solution of BM, PTB7-Th with PC71The mass ratio of BM is 1:1.5, and a layer of PTB7-Th with a thickness of 90 nm and PC is obtained71Mixed film (active layer) of BM; then a layer of MoO with the thickness of 8 nm is evaporated on the active layer in vacuum3(anode buffer layer); finally, a layer of 100 nm thick Ag is vacuum-evaporated on the anode modification layer to serve as an anode, so that the organic solar cell shown in fig. 2 is obtained, and the photoelectric conversion efficiency of the organic solar cell is 8.1%.
Example 5:
carrying out ultrasonic cleaning on the glass substrate by using a detergent, isopropanol, ethanol and acetone in sequence, and drying by using nitrogen after cleaning; preparing a ZnO film on the surface of the glass substrate by using a spin coating method, wherein the thickness of the ZnO film is about 45 nm; then, a 15 nm ultrathin Ag film is evaporated on the surface of the ZnO film in vacuum; then Au grids with stepped structures with thicknesses of 15 nm, 20nm, 25 nm and 30nm, corresponding inscribed circle diameters of 160 μm, 120 μm, 80 μm and 50 μm and line widths of 5 μm are respectively evaporated on the Au grids to form the metal transparent electrode with the conductive step distribution as shown in figure 1.
Spin-coating ZnO (cathode buffer layer) with the thickness of 30nm on the surface of the transparent metal electrode, and annealing the formed film, wherein the annealing temperature is 150 ℃, and the annealing time is 10 minutes; followed by spin coating of PTB7-Th and PC61Mixed solution of BM, PTB7-Th with PC71The mass ratio of BM is 1:1.5, and a layer of PTB7-Th with a thickness of 90 nm and PC is obtained71Mixed film (active layer) of BM; then, a PANI (anode buffer layer) with the thickness of 8 nm is coated on the active layer in a vacuum evaporation mode; finally, a layer of 100 nm thick Ag is vacuum-evaporated on the anode modification layer to serve as an anode, so that the organic solar cell shown in fig. 2 is obtained, and the photoelectric conversion efficiency of the organic solar cell is 8.4%.
Example 6:
carrying out ultrasonic cleaning on the glass substrate by using a detergent, isopropanol, ethanol and acetone in sequence, and drying by using nitrogen after cleaning; preparing a ZnO film on the surface of the glass substrate by using a spin coating method, wherein the thickness of the ZnO film is about 45 nm; then, vacuum evaporating and plating a layer of 20nm ultrathin Ag film on the surface of the ZnO film; then, Cu grids with stepped structures with thicknesses of 10 nm, 15 nm, 20nm and 25 nm, corresponding inscribed circle diameters of 160 μm, 120 μm, 80 μm and 50 μm and line widths of 5 μm are respectively evaporated on the metal transparent electrodes to form the conductive step distribution metal transparent electrodes shown in figure 1.
Spin-coating ZnO (cathode buffer layer) with the thickness of 30nm on the surface of the transparent metal electrode, and annealing the formed film, wherein the annealing temperature is 150 ℃, and the annealing time is 10 minutes; followed by spin coating of PTB7-Th and PC61Mixed solution of BM, PTB7-Th with PC71The mass ratio of BM is 1:1.5, and a layer of PTB7-Th with a thickness of 90 nm and PC is obtained71Mixed film (active layer) of BM; then vacuum evaporating a layer of V with the thickness of 8 nm on the active layer2O5(anode buffer layer); finally, a layer of 100 nm thick Ag is vacuum-evaporated on the anode modification layer to serve as an anode, so that the organic solar cell shown in fig. 2 is obtained, and the photoelectric conversion efficiency of the organic solar cell is 8.1%.
Example 7:
carrying out ultrasonic cleaning on the glass substrate by using a detergent, isopropanol, ethanol and acetone in sequence, and drying by using nitrogen after cleaning; preparing a ZnO film on the surface of the glass substrate by using a spin coating method, wherein the thickness of the ZnO film is about 45 nm; then a 5 nm ultrathin Ag film is evaporated on the surface of the ZnO film in vacuum; then, Al grids having thicknesses of 5 nm, 10 nm, 15 nm and 20nm, corresponding to inscribed circle diameters of 200 μm, 150 μm, 100 μm and 50 μm, and a line width of 5 μm were deposited thereon, respectively, to form a conductive step-distributed metal transparent electrode as shown in FIG. 1.
Spin-coating ZnO (cathode buffer layer) with the thickness of 30nm on the surface of the transparent metal electrode, and annealing the formed film, wherein the annealing temperature is 150 ℃, and the annealing time is 10 minutes; followed by spin coating of PTB7-Th and PC71Mixed solution of BM, PTB7-Th with PC71The mass ratio of BM is 1:1.5, and a layer of PTB7-Th with a thickness of 90 nm and PC is obtained71Mixed film (active layer) of BM; then, a layer of PEDOT (PSS) (anode buffer layer) with the thickness of 8 nm is evaporated on the active layer in vacuum; finally, a layer of 100 nm thick Ag is vacuum-evaporated on the anode modification layer to serve as an anode, so that the organic solar cell shown in fig. 2 is obtained, and the photoelectric conversion efficiency of the organic solar cell is 7.0%.
Example 8:
carrying out ultrasonic cleaning on the glass substrate by using a detergent, isopropanol, ethanol and acetone in sequence, and drying by using nitrogen after cleaning; preparing a ZnO film on the surface of the glass substrate by using a spin coating method, wherein the thickness of the ZnO film is about 45 nm; then a 5 nm ultrathin Ag film is evaporated on the surface of the ZnO film in vacuum; then Ag grids with the thickness of 10 nm, 15 nm, 20nm and 25 nm, the diameter of the corresponding inscribed circle of 200 μm, 150 μm, 100 μm and 50 μm and the line width of 10 μm are respectively evaporated on the Ag grids to form the metal transparent electrode with the conductive step distribution as shown in figure 1.
Spin-coating ZnO (cathode buffer layer) with the thickness of 30nm on the surface of the transparent metal electrode, and annealing the formed film, wherein the annealing temperature is 150 ℃, and the annealing time is 10 minutes; followed by spin-coating a mixed solution of PTB7-Th and Y6, PTB7-Th with PC71The mass ratio of BM is 1:1.5, and a layer of PTB7-Th with a thickness of 90 nm and PC is obtained71Mixed film (active layer) of BM; then, a NiO (anode buffer layer) with the thickness of 8 nm is evaporated on the active layer in vacuum; finally, a layer of Au with a thickness of 100 nm is vacuum-evaporated on the anode modification layer to serve as an anode, so that the organic solar cell shown in fig. 2 is obtained, and the photoelectric conversion efficiency of the organic solar cell is 6.8%.
Example 9:
carrying out ultrasonic cleaning on the glass substrate by using a detergent, isopropanol, ethanol and acetone in sequence, and drying by using nitrogen after cleaning; preparing a ZnO film on the surface of the glass substrate by using a spin coating method, wherein the thickness of the ZnO film is about 45 nm; then a 5 nm ultrathin Ag film is evaporated on the surface of the ZnO film in vacuum; then Ag grids with the thickness of 10 nm, 15 nm, 20nm and 25 nm, the diameter of corresponding inscribed circles of 200 μm, 150 μm, 100 μm and 50 μm and the line width of 15 μm are respectively evaporated on the Ag grids to form the metal transparent electrode with the conductivity step distribution as shown in figure 1.
Spin-coating ZnO (cathode buffer layer) with the thickness of 30nm on the surface of the transparent metal electrode, and annealing the formed film, wherein the annealing temperature is 150 ℃, and the annealing time is 10 minutes; followed by spin-coating a mixed solution of PTB7-Th and IEICO-4F, PTB7-Th with PC71The mass ratio of BM is 1:1.5, and a layer of PTB7-Th with a thickness of 90 nm and PC is obtained71Mixed film (active layer) of BM; then, a layer of WO with the thickness of 8 nm is evaporated on the active layer in vacuum3(anode buffer layer); finally, a layer of Cu with a thickness of 100 nm is vacuum-evaporated on the anode modification layer to serve as an anode, so that the organic solar cell shown in fig. 2 is obtained, and the photoelectric conversion efficiency of the organic solar cell is 6.5%.
Example 10:
carrying out ultrasonic cleaning on the glass substrate by using a detergent, isopropanol, ethanol and acetone in sequence, and drying by using nitrogen after cleaning; preparing a ZnO film on the surface of the glass substrate by using a spin coating method, wherein the thickness of the ZnO film is about 45 nm; then a 5 nm ultrathin Ag film is evaporated on the surface of the ZnO film in vacuum; then Ag grids with the thickness of 10 nm, 15 nm, 20nm and 25 nm, the diameter of the corresponding inscribed circle of 200 μm, 150 μm, 100 μm and 50 μm and the line width of 20 μm are respectively evaporated on the Ag grids to form the metal transparent electrode with the conductive step distribution as shown in figure 1.
Spin-coating ZnO (cathode buffer layer) with the thickness of 30nm on the surface of the transparent metal electrode, and annealing the formed film, wherein the annealing temperature is 150 ℃, and the annealing time is 10 minutes; followed by spin coating of PTB7-Th and PC71Mixed solution of BM, PTB7-Th with PC71The mass ratio of BM is 1:1.5, and a layer of PTB7-Th with a thickness of 90 nm and PC is obtained71Mixed film (active layer) of BM; then vacuum evaporating a layer of V with the thickness of 8 nm on the active layer2O5(anode buffer layer); finally, a layer of Al with a thickness of 100 nm is vacuum-evaporated on the anode modification layer to serve as an anode, so that the organic solar cell shown in fig. 2 is obtained, and the photoelectric conversion efficiency of the organic solar cell is 6.2%.
Example 11:
carrying out ultrasonic cleaning on the glass substrate by using a detergent, isopropanol, ethanol and acetone in sequence, and drying by using nitrogen after cleaning; preparing a ZnO film on the surface of the glass substrate by using a spin coating method, wherein the thickness of the ZnO film is about 45 nm; then, a 15 nm ultrathin Au film is evaporated on the surface of the ZnO film in vacuum; then, Ag grids with a step structure, which have thicknesses of 15 nm, 20nm, 25 nm and 30nm, corresponding to inscribed circle diameters of 110 μm, 90 μm, 70 μm and 50 μm, and line widths of 5 μm, are respectively evaporated on the Ag grids to form the metal transparent electrode with the conductive step distribution as shown in FIG. 1.
Spin-coating ZnO (cathode buffer layer) with the thickness of 30nm on the surface of the transparent metal electrode, and annealing the formed film, wherein the annealing temperature is 150 ℃, and the annealing time is 10 minutes; followed by spin coating of PTB7-Th and PC71Mixed solution of BM, PTB7-Th with PC71The mass ratio of BM is 1:1.5, and a layer of PTB7-Th with a thickness of 90 nm and PC is obtained71Mixed film (active layer) of BM; then a layer of MoO with the thickness of 8 nm is evaporated on the active layer in vacuum3(anode buffer layer); finally, a layer of Al with a thickness of 100 nm is vacuum-evaporated on the anode modification layer to serve as an anode, so that the organic solar cell shown in fig. 2 is obtained, and the photoelectric conversion efficiency of the organic solar cell is 9.2%. The I-V curve of the organic solar cell device of this example is shown in fig. 3.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any way, and other variations and modifications may be made without departing from the spirit of the invention as set forth in the claims.

Claims (10)

1. The metal transparent electrode is characterized by sequentially comprising a seed crystal layer, a metal film and a metal grid from bottom to top, wherein the metal grid is of a stepped structure with gradually increased conductivity.
2. The metal transparent electrode as claimed in claim 1, wherein the material of the metal grid is Ag, Au, Cu or Al.
3. The metal transparent electrode according to claim 1, wherein the thickness of the metal mesh is 5 to 30 nm; the diameter of an inscribed circle of the metal grid is 50-200 mu m; the line width of the metal grid is 5-20 mu m.
4. The metal transparent electrode of claim 1, wherein the seed layer is MoO3ZnO or TeO2(ii) a The thickness of the seed crystal layer is 40-50 nm.
5. The metal transparent electrode as claimed in claim 1, wherein the material of the metal thin film is Ag, Au, Cu or Al; the thickness of the metal film is 5-20 nm.
6. An organic solar cell comprising the metal transparent electrode according to any one of claims 1 to 5, wherein the organic solar cell comprises, in order from the bottom surface to the top surface, a substrate, a metal transparent electrode, a cathode buffer layer, a photoactive layer, an anode buffer layer, and a back electrode.
7. The organic solar cell according to claim 6, wherein the substrate is made of glass or mylar; the cathode buffer layer is made of a first metal oxide or an organic material; the photoactive layer is an electron donor and electron acceptor composite film; the anode buffer layer is made of a second metal oxide, a polymer or graphene; the back electrode is made of Ag, Au, Cu or Al.
8. The organic solar cell according to claim 7, wherein the first metal oxide is ZnO or SnO2(ii) a The organic material is Bphen or PFN-Br.
9. The organic solar cell according to claim 7, wherein the second metal oxide is MoO3、V2O5、WO3NiO or V2O5The polymer is PEDOT PSS or PANI.
10. The organic solar cell according to claim 7, wherein the electron donor is P3HT, PTB7, PTB7-Th or PBDB-T; the electron acceptor is a fullerene derivative or a non-fullerene acceptor material; the fullerene derivative is PC61BM or PC71BM; the non-fullerene acceptor material is Y6 or IEICO-4F.
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Cited By (1)

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Publication number Priority date Publication date Assignee Title
WO2023035180A1 (en) * 2021-09-09 2023-03-16 华为技术有限公司 Solar cell device and manufacturing method therefor, and electronic device

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